Abstract: An organic light-emitting diode display device includes a substrate, a display unit on the substrate, a touch unit facing the substrate, and a sealing portion surrounding the display unit. The sealing portion couples the substrate to the touch unit and includes glass frit. The touch unit includes an encapsulation substrate, a first conductive layer on the encapsulation substrate, an insulating layer on a portion of the first conductive layer and the encapsulation substrate, and a second conductive layer on the first conductive layer and the insulating layer. The insulating layer of the touch unit includes an organosilicon compound and has a thermal decomposition temperature of about 360° C. or more.

Abstract: Provided is an organic electroluminescence device that has solved the conventional problems, and is thermally and chemically stable, has high efficiency with which an electron is injected from a cathode layer or an intermediate conductive layer to a light emitting layer, provides high luminous efficiency at a low voltage, and can maintain a long lifetime.

Abstract: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Abstract: An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure.

Abstract: The invention relates to novel quinone compounds and to the use thereof as dopants in organic electronics.

Abstract: A polymeric material includes a pendant polycyclic aromatic compound precursor.

Abstract: An object of the invention is to provide a polymer compound having a high hole transport capacity, excellent in electrochemical stability, and suitable to film formation according to a wet film formation method. Another object of the invention is to provide an organic electroluminescence element having a high current efficiency, a low drive voltage, and a long derive lifetime. The polymer compound has a crosslinking group bonding to the arylamine moiety in the repeating unit via at least one single bond therebetween.

Abstract: A method is provided for fabricating a multilayer electronic device on a flexible substrate including at least a first and a second patterned layer, wherein the first patterned layer is defined with a linewidth that is smaller than the linewidth of the second patterned layer, and the second patterned layer is defined by a patterning technique which is capable of correcting for local distortions of the pattern of said first layer on top of the flexible substrate and wherein the first patterned layer is laid-out in such a way that the geometric overlap between a portion of the second layer and a portion of the first layer is insensitive against small variations of the position of the second patterned layer.

Abstract: An organic compound represented by the following general formula (I) wherein n is an integer from 1 to 500, inclusive, and R1 and R2 are each independently a moiety having an atom length of from about 8 atoms to about 20 atoms.

Abstract: The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Abstract: A compound for an organic thin film transistor having a structure of the following formula (1): wherein R1 to R6 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have

Abstract: A red light emitting organic electroluminescence device (11) has a structure in which an organic layer (14) including a light emitting layer (14c) is sandwiched between an anode (13) and a cathode (15). In the organic electroluminescence device (11), the light emitting layer (14c) contains, as a host material, a polycyclic aromatic hydrocarbon compound of which a parent skeleton is 4 to 7 rings, together with a red light emitting guest material. In addition, a photosensitizing layer (14d) containing a phosphorescent material having an organic material is provided adjacently to the light emitting layer (14c). Consequently, there are provided a red light organic electroluminescence device being sufficiently good in luminous efficiency and color purity and a display apparatus using the same.

Abstract: A semiconductive hole transport material containing polar substituent groups, the polar substituent groups substantially not affecting the electronic properties of the hole transport material and the hole transport material being soluble in a polar solvent.

Abstract: An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.

Abstract: Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and methods of forming the same are disclosed. A block copolymer is applied to a substrate and self-assembled into parallel lamellae above a substrate. The block copolymer may optionally be allowed to self-assemble into a multitude of domains oriented either substantially parallel or substantially perpendicular to an underlying substrate.

Abstract: An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

Abstract: An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring the light-emitting region. The OLED display includes a first electrode positioned at the light-emitting region and including a plurality of division regions divided according to a virtual cutting line crossing the light-emitting region, an organic emission layer positioned on the first electrode, a second electrode positioned on the organic emission layer, a driving thin film transistor connected to the first electrode, and a plurality of input terminals positioned at the non-light-emitting region and respectively connecting between each of division regions and the driving thin film transistor.

Abstract: A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

Abstract: A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode.

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract: An organic light emitting diode (OLED) display includes a substrate where a plurality of pixels are formed, a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels, a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels, and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.

Abstract: The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and a second electrode made of a conductive material formed on the solid electrolyte to cover the regions with different heights. In addition, a multibit semiconductor memory device is provided which includes a bias circuit that can control the intensity of a current and time the current is supplied to the variable resistance device inside a memory cell in multiple steps to configure multibits.

Abstract: An organic light-emitting display device includes a substrate, a first electrode on the substrate, the first electrode including a reflection film, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an emission layer on the hole transport layer, an electron injection transport layer on the emission layer, a second electrode on the electron injection transport layer, the second electrode including a semi-transmissive reflective material, and a control layer positioned between a lower surface of the hole injection layer and an upper surface of the hole transport layer, the control layer including an organic material and having a refractive index lower than that of an adjacent layer.

Abstract: A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Abstract: An organic light-emitting device including a substrate; a first electrode; a second electrode; an emission layer; a first electron transport layer; a second electron transport layer; a third electron transport layer; and a hole transport layer, wherein the first electron transporting material has an electron mobility smaller than an electron mobility of the second electron transporting material at an electric field of 800 to 1000 V/cm, the second electron transporting material and the third electron transporting material each independently have an electron mobility of about 10?8 to about 10 cm2/V·s at an electric field of 800 to 1000 V/cm, and the third electron transport layer has an electron injection barrier of about 0.2 eV or less at an interface between the third electron transport layer and the second electrode.

Abstract: An organic light emitting display apparatus comprises an active layer, a gate electrode, a pixel electrode, source and drain electrodes, an intermediate layer, and an opposite electrode. The gate electrode includes: a first insulating layer; first, second and third conductive layers; a fourth conductive layer protecting the third conductive layer; and a fifth conductive layer. The pixel electrode includes a first electrode layer formed on the first insulating layer, a second and a third electrode layer, a fourth electrode layer protecting the third electrode layer, and a fifth electrode layer. A second insulating layer is disposed between the source and drain electrodes. The intermediate layer is disposed between the opposite electrode and the pixel electrode, and prevents damage to the pixel electrode during the manufacturing process.

Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Abstract: The present invention relates to an anthracene derivative and an organic electroluminescent device using the same. More specifically, the present invention relates to: a novel compound which has a core (for example, an indenoanthracene core) where both an anthracene moiety with excellent device characteristics and a fluorene moiety with excellent fluorescent properties are fused, wherein substituents (for example, a heterocyclic group such as a benzimidazole group, a benzothiazole group, a benzoxazole group, a pyridinyl group or a bipyridinyl group) with an electron transfer capacity are substituted to the core; and an organic electroluminescence element which has improved luminous efficiency, brightness, thermal stability, driving voltage, and lifetime, by comprising an organic layer which is positioned between a positive electrode and negative electrode and contains the novel compound.

Abstract: An organic light emitting element includes a pair of electrodes at least one of which has visible light transmittance; and an organic EL layer provided between the pair of electrodes. The organic EL layer includes at least an organic light emitting layer that emits light when a voltage is applied between the pair of electrodes. The organic light emitting layer includes an electron transport host material; and at least first and second guest materials. Each of the first and second guest materials has an emission peak in a blue to blue-green color region. The electron transport host material has an ionization potential (IPH) and an electron affinity (AFH), and the first guest material has an ionization potential (IPG1) and an electron affinity (AFG1) that satisfy Expression (1): IPH?IPG1 and AFH<AFG1 (1). The organic light emitting element has significantly improved efficiency without any influence on driving voltage.

Abstract: A photocapacitor device is provided for responding to a photon having at least a specified energy. The photocapacitive device includes a first portion composed of a photocapacitive material; a second portion composed of a non-photocapacitive material; and a depletion region disposed between the first and second portions. The photocapacitive and non-photocapacitive materials respectively have first and second Fermi-energy differences, with the second Fermi-energy difference being higher than the first Fermi-energy difference.

Abstract: Novel organic compounds containing a twisted aryl group are provided. In particular, the compounds provided contain a 2-phenylpyridine ligand having a twisted aryl group on the pyridine portion of the ligand. The compounds may be used in organic light emitting devices, particularly as emitting dopants. Devices comprising the compounds containing twisted aryl may demonstrate improved color, efficiency, stability and manufacturing. Additionally, methods are provided for making homoleptic Ir (III) compounds which may contain a twisted aryl.

Abstract: A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2??(1) wherein L is —C?C—, or —CH?CH— in a trans configuration, X1 and X2 are independently an alkyl group having 2 to 30 carbon atoms or a haloalkyl group having 1 to 30 carbon atoms, and Ar is a substituted or unsubstituted aromatic hydrocarbon group having 14 to 60 ring carbon atoms which is a condensed ring of three or more rings, or a substituted or unsubstituted aromatic heterocyclic group having 11 to 60 ring atoms which is a condensed ring of three or more rings.

Abstract: A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer, a charge blocking layer, an intermediate layer. The photoelectric conversion layer contains an organic material between the electrodes. The charge blocking layer is disposed between the photoelectric conversion layer and one of the electrodes. The intermediate layer includes an organic compound disposed between the photoelectric conversion layer and the charge blocking layer and having a glass transition temperature of 200° C. or higher.

Abstract: A polymer compound comprising a constitutional unit of the following formula (1): (wherein, P represents an integer of 1 to 4, Q represents an integer of 0 to 4. RX and RY represent each independently an alkyl group, alkoxy group, alkylthio group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group or arylalkylthio group, when there exist a plurality of RX's, these may be the same or different, and when there exist a plurality of RY's, these may be the same or different. Ar1 represents an unsubstituted or substituted arylene group or an unsubstituted or substituted di-valent heterocyclic group, and Ar2 represents an unsubstituted or substituted aryl group or an unsubstituted or substituted mono-valent heterocyclic group. A plurality of Ar1's and Ar2's may each be the same or different.).

Abstract: A device is provided. The device includes an anode, a cathode and a double emissive layer disposed between the anode and the cathode. The double emissive layer includes a first organic emissive layer and a second organic emissive layer. The second organic emissive layer is disposed between the anode and the cathode, and is adjacent to the first organic emissive layer. The device also includes a blocking layer disposed adjacent to the second organic emissive layer and between the second organic emissive layer and the anode. The device also includes a hole transport layer disposed between the blocking layer and the anode. At least one of the anode and the cathode is transmissive.

Abstract: A light emitting device and electronic equipment having a long life at a low electric power consumption are provided. A hole transporting region composed of a hole transporting material, an electron transporting region composed of an electron transporting material, and a mixture region in which both the hole transporting material and the electron transporting material are mixed at a fixed ratio are formed within an organic compound film. Regions having a concentration gradient are formed between the mixture region and carrier transporting regions until the fixed ratio is achieved. In addition, by doping a light emitting material into the mixture region, functions of hole transportation, electron transportation, and light emission can be respectively expressed while all of the interfaces existing between layers of a conventional lamination structure are removed.

Abstract: An organic light emitting diode display includes a p-doped layer that can obtain high efficiency at low-voltage driving and low current and prevent leakage current by differentially forming the p-doped layer for each pixel.

Abstract: A compound of the formula R1(CR3?CR4)nAr(CR4?CR3)nR2 wherein: n is 0 or 1; Ar represents aryl or heteroaryl having 1-5 aromatic rings which may be chain or fused or a combination of chain and fused, which may be substituted with alkoxy, fluoro, fluoroalkyl or cyano and which in the case of a 5-membered ring nitrogen heteroatom may be N-substituted with aryl or substituted aryl optionally further substituted with alkoxy, fluoro, fluoroalkyl or cyano; R1 and R2 independently represent aryl or nitrogen, oxygen or sulphur-containing heteroaryl having two to four fused aromatic rings one of which may be 5-membered and optionally substituted by aryl or heteroaryl having 1-5 chain or fused aromatic rings which may be further substituted with alkoxy, fluoro, fluoroalkyl or cyano; and R3 and R4 independently represent hydrogen, methyl, ethyl or benzyl.

Abstract: An organic light emitting device comprises a first substrate, a first electrode formed on the first substrate, a hole transporting layer formed on the first electrode, a light emitting layer formed on the hole transporting layer, a second electrode formed on the light emitting layer; and a mixture layer formed between the hole transporting layer and the light emitting layer, where the mixture layer including a hole transporting functioning material, wherein the hole transporting functioning material and the light emitting functioning material have concentration gradient respectively.

Abstract: The invention relates to an electronic device, particularly photoreceptor or electrophotographic device, comprising an organic function material, which comprises an electron transport component and a hole trap component, to an organic material, which is a mixture or a copolymer comprising an electron transport component and a hole trap component, its use as charge transport material in a photoreceptor or electrophotographic device, especially of the positive charging type, and to electronic devices comprising such a material.

Abstract: An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a current path between the source electrode and the drain electrode, a gate electrode which controls an electric current passing through the current path, and an insulating layer which insulates the organic semiconductor layer from the gate electrode, wherein the insulating layer is formed of a cured substance of a composition containing a first compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat, and a second compound having two or more active hydrogen groups in the molecule, where at least one of the first compound and the second compound is a polymer compound.

Abstract: A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

Abstract: The invention provides a semiconductor device where data can be written after the production and forgery caused by rewriting of data can be prevented, and which can be manufactured at a low cost using a simple structure and an inexpensive material. Further, the invention provides a semiconductor device having the aforementioned functions, where wireless communication is not blocked by the internal structure. The semiconductor device of the invention has an organic memory provided with a memory cell array including a plurality of memory cells, a control circuit for controlling the organic memory, and a wire for connecting an antenna. Each of the plurality of memory cells has a transistor and a memory element. The memory element has a structure where an organic compound layer is provided between a first conductive layer and a second conductive layer. The second conductive layer is formed in a linear shape.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

Abstract: It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer 102 containing a light-emitting material, a second layer 103 containing an N-type semiconductor, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium are provided between an anode 101 and a cathode 106, wherein the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the cathode 106 are provided in order, and wherein the cathode has a layer containing reflective metal.

Abstract: The present invention relates to an organic thin-film light emitting device containing an organic compound represented by formula (1) and a donor compound. the light emitting device can achieve both of the low-voltage driving operation and high luminance efficiency. YA1-Ar)n1??(1) (Y represents either substituted or unsubstituted pyrene, or substituted or unsubstituted anthracene. A1 is selected from the group consisting of a single bond, an arylene group, and a hetero arylene group. Ar is selected from the group consisting of a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group. These groups may be substituted or unsubstituted, and n1 is an integer of 1 to 3.).

Abstract: The invention relates to an electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, and also to a method for its production. The arrangement of organic layers comprises the following layers: at least one charge carrier transport layer consisting of organic material, and at least one light-emitting layer consisting of organic material. The arrangement of organic layers furthermore comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.

Abstract: A multi-layer body includes at least two functional layers on a top side of a carrier substrate, which are structured in register relationship with each other, by a procedure whereby an underside of the carrier substrate is prepared in such a way that in a first region there results a transparency for a first exposure radiation and in at least one second region there results a transparency for at least one second exposure radiation different therefrom in register relationship with the first region, the underside is successively exposed with the first and the at least one second exposure radiation and the first exposure radiation is used for structuring a first functional layer and the at least one second exposure radiation is used for structuring at least one second functional layer on the top side of the carrier substrate.