Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

Abstract: In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

Abstract: An X-ray detecting panel includes a thin film transistor; first and second photosensors connected to the thin film transistor; and a scintillator which changes X-rays that are external and incident thereto into visible light rays.

Abstract: Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.

Abstract: A method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced. The method includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask.

Abstract: An aromatic compound represented by the following formula (1). [In the formula, ring A and ring B each represent a benzene ring, an aromatic fused ring composed of 2-4 rings, a heteroaromatic ring or a heterocyclic aromatic fused ring composed of 2-4 rings, R1a represents a group —CHR2a—CHR2bR2c, and R1b, R1c and R1d each represent hydrogen, aryl or a group —CHR2d—CHR2eR2f. This is with the proviso that at least 2 of R1b, R1c and R1d are not hydrogen. R2a, R2b and R2c each represent hydrogen, alkyl, aryl or a substituted silyl group, and R2a and R2b may be bonded together to form a ring. R2d, R2e and R2f each represent hydrogen, alkyl, aryl or a substituted silyl group, and R2d and R2e may be bonded together to form a ring.

Abstract: The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

Abstract: A thin film transistor includes a contact layer that contains an organic semiconductor material and an acceptor material or a donor material provided between an organic semiconductor layer and a source electrode/a drain electrode.

Abstract: Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

Abstract: A method for enhancing electrical conductivity of a film which includes at least one conductive polymer. The method includes providing the film comprising the at least one conductive polymer and at least one polymer acid, agitating the film in at least one reagent; and, placing the film on a heated surface. The at least one reagent includes a reagent acid that is stronger than the polymer acid. The conductivity of the treated film is significantly greater than the conductivity of the untreated film.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Abstract: Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.

Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.

Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

Abstract: A thin film transistor with improved performance is provided. The thin film transistor includes a gate electrode, an organic semiconductor layer, and a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer. The gate insulating layer contains a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked.

Abstract: Disclosed is a display device including a thin film transistor. A method for forming the display device includes forming an organic semiconductor pattern in the presence of a magnetic field or an electric field. Due to the presence of a magnetic field or an electric field, the molecules of the organic semiconductor layer of the thin film transistor are substantially aligned in a predetermined direction.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Abstract: Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer; and a gate electrically coupled to the semiconductor layer.

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: A semiconductor device having good switching characteristics even metallic CNTs are included and a manufacturing method thereof are provided. The semiconductor device includes a source electrode; a drain electrode; and a channel layer formed between the source electrode and the drain electrode and including a carbon nanotube group. The carbon nanotube group includes conductive carbon nanotubes having a characteristic of a conductive material and semiconductive carbon nanotubes having a characteristic of a semiconductive material. The density of the carbon nanotube group is the density where the source electrode and the drain electrode are connected to each other through all of the carbon nanotube group and not connected to each other only through the conductive carbon nanotubes.

Abstract: The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.

Abstract: Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material.

Abstract: It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

Abstract: A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain extension region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

Abstract: A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode provided over a substrate; a gate insulating film provided to cover the substrate and the gate electrode; a first island-shaped semiconductor layer and a second island-shaped semiconductor layer each formed as a stack of a microcrystalline semiconductor layer and a buffer layer with a depression on an upper surface thereof, over the gate electrode with the gate insulating film interposed therebetween; a conductive semiconductor layer; and a conductive layer provided on the conductive semiconductor layer. The conductive semiconductor layer is provided between the first island-shaped semiconductor layer and the second island-shaped semiconductor layer in contact with the gate insulating film.

Abstract: A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.

Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.

Abstract: The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps.

Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Abstract: In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

Abstract: Disclosed are semiconducting compounds having one or more pyrrolo[3,2-b]pyrrole-2,5(1H,4H)-dione 3,6-diyl units. Such compounds can be monomeric, oligomeric, or polymeric, and can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Abstract: The present invention is directed to manufacturing an organic transistor with an organic semiconductor film formed by a coating method, without involving a process of forming a rib for forming the organic semiconductor film. To be more specific, the organic transistor of the present invention includes: (1) a source electrode part and a drain electrode part which are formed on a substrate; (2) rib selectively formed on part of the source electrode part and the drain electrode part; (3) an organic semiconductor film placed in the region defined by the ribs and connecting the source electrode part and the drain electrode part; and (4) a gate electrode formed on the organic semiconductor film through a gate insulating film. The organic transistor of the present invention is characterized in that there is a gap between the rib formed on the source electrode part and the rib formed on the drain electrode part.

Abstract: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

Abstract: To provide an electrode for an organic device which can be widely applied to organic devices by having both hole injection function and electron injection function. A carrier injection electrode layer 110 in which a metal for electron injection 112 (a metal having a work function of 4.2 eV or less) and a metal for hole injection 113 (a metal having a work function of more than 4.2 eV) are mixed with one kind of organic compound 111 is provided between a first organic layer 100a and a second organic layer 100b. Thus, carriers are injected into a carrier injection electrode layer 110 in the direction according to voltage application, and seemingly, current flows between an organic layer 100 and a metal electrode 101, or between the first organic layer 100a and the second organic layer 100b.

Abstract: The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound.

Abstract: The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

Abstract: An organic device including at least two electrodes; at least one organic active layer, wherein the organic active layer is disposed in between two electrodes; and an electrode modification layer, wherein the electrode modification layer is disposed in between two electrodes and in contact with one of the electrodes; and the electrode modification layer includes a fluorocarbon compound selected from the materials having a chemical structure of (CxFy)n, wherein the “x”, “y”, and “n” are integers, and wherein 1<x?70, 1<y?50, and n?1.

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract: In accordance with some embodiments, logical circuits comprising carbon nanotube field effect transistors are disclosed herein.

Abstract: A thin film transistor array panel comprises a repair line disposed in a peripheral area of a display area and being configured to repair when at least one of a gate line and a data line are disconnected, and a detour line disposed in the peripheral area and comprising at least one resistor having higher resistance than a remaining portion of the detour line, wherein both ends of the detour line are connected to the repair line to protect the array panel.

Abstract: A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.

Abstract: A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. Consequently, a composition including carbon nitride according to the present invention is formed at a deposition temperature that enables to include hydrogen in the composition at 30 to 45 atomic %, for example, at temperatures of 100° C. or less, preferably 50° C. or less, more preferably from 20° C. to 30° C., with stability and adhesiveness kept.

Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.

Abstract: A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein at least one of R1 to R6 is a substituent, and the remaining R1 to R6 are a hydrogen atom.

Abstract: An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.