Abstract: An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.

Abstract: The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

Abstract: An organic thin film transistor (TFT) that allows an organic semiconductor layer to be easily patterned includes a gate electrode, source and drain electrodes insulated from the gate electrode, a self-assembly monolayer formed on the source and drain electrodes, an organic semiconductor layer which is insulated from the gate electrode and covers at least a portion of the self-assembly monolayer. A flat panel display apparatus includes the organic TFT. A method of manufacturing an organic TFT includes forming source and drain electrodes on a substrate; forming a self-assembly monolayer covering at least the source and drain electrodes; patterning the self-assembly monolayer to remove portions of the self-assembly monolayer that are not located on the source and drain electrodes; and forming an organic semiconductor layer by inkjet printing an organic semiconductor material between the source and drain electrodes.

Abstract: A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

Abstract: An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.

Abstract: A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: According to an aspect of the invention, a method is provided for manufacturing electronic components. A conducting element comprising a first portion, a second portion and a third portion between the first portion and the second portion is provided. Thermally responsive dielectric material is added at least onto the third portion of the conducting element. Electric current is supplied between the first portion and the second portion of the conducting element causing ohmic heating to affix dielectric material located on the third portion to the third portion. Non-thermally-affixed dielectric material is removed.

Abstract: A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode.

Abstract: Fabrication methods for electronic devices with via through holes and thin film transistor devices are presented. The fabrication method the electronic device includes providing a substrate, forming a patterned lower electrode on the substrate, and forming a photosensitive insulating layer on the substrate covering the patterned lower electrode. A patterned optical shielding layer is applied on the photosensitive insulating layer. Exposure procedure is performed curing the exposed photosensitive insulating layer. The optical shielding layer and the underlying photosensitive insulating layer are sequentially removed, thereby forming an opening. A patterned upper electrode is formed on the photosensitive insulating layer filling the opening to create a conductive via hole.

Abstract: An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R1 to R3 connected to a first benzene ring and with functional groups R4 to R6 connected to a second benzene ring. The base structure's third and fourth benzene rings are connected to X1, X2 and X3, X4 respectfully. At least one of X1 and X2 is a sulfur atom. At least one of X3 and X4 is a sulfur atom. The base structure further includes functional groups R7 and R8.

Abstract: An organic light emitting display apparatus includes a substrate; a thin film transistor which is disposed over the substrate; a first electrode which is disposed over the substrate and electrically connected to the thin film transistor; a passivation layer which covers the thin film transistor and contacts a predetermined region of an upper surface of the first electrode; an intermediate layer which is disposed over the first electrode, includes an organic emission layer, and contacts a predetermined region of the passivation layer; and a second electrode which is disposed over the intermediate layer.

Abstract: An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Abstract: An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

Abstract: An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode throu

Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Abstract: A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part.

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract: A semiconductor device 19-1 includes a source electrode 3s and a drain electrode 3d disposed on a substrate 1, an insulating partition wall 5, which has a first opening 5a reaching end portions of the source electrode 3s and the drain electrode 3d and between these electrodes 3s-3d and which is disposed on the substrate 1, a channel portion semiconductor layer 7a, which is composed of a semiconductor layer 7 formed from above the partition wall 5 and which is disposed on the bottom portion of the first opening 5a while being separated from the semiconductor 7 on the partition wall 5, a gate insulating film 9 formed all over the surface from above the semiconductor layer 7 including the channel portion semiconductor layer 7a, and a gate electrode 11a disposed on the gate insulating film 9 while overlapping the channel portion semiconductor layer 7a.

Abstract: Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.

Abstract: An object of the present invention is to provide a polymer having a low LUMO, a high charge transport property, and further high solubility in a solvent. The present invention provides a polymer having a repeating unit represented by the formula (I): wherein Ar0 means an aromatic ring that may have a substituent or substituents, or a heterocycle that may have a substituent or substituents, and X1 and X2 are the same or different and each mean an oxygen atom or a sulfur atom.

Abstract: Embodiments of the present invention provide an organic photosensitive optoelectronic device comprising at least one tetra-azaporphyrin compound of formula (I) are disclosed herein.

Abstract: An organic non-volatile memory array including multiple pixels and associated signal lines that are disposed on and between a substrate, a single ferroelectric dielectric layer, and a single organic dielectric layer, where each pixel includes a ferroelectric field-effect transistor (FeFET) and at least one organic thin-film field effect transistor (FET) that are connected to associated signal lines in a way that facilitates addressable reading and writing to the FeFET of a selected pixel without disturbing the data stored in adjacent pixels. Analog data storage in the FeFET array is also introduced that does not require analog-to-digital conversion of the stored data.

Abstract: Disclosed are polymeric compounds based upon a head-to-head (H—H) alkylthio-substituted bithiophene repeating units (e.g., 3,3?-bis(tetradecylthio)-2,2?-bithiophene). Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability at ambient conditions.

Abstract: An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed.

Abstract: A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.

Abstract: A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

Abstract: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film.

Abstract: Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

Abstract: Described is a continuous process for preparing nanodispersions including providing a composition comprising a liquid and a solute; heating the composition to dissolution of the solute to form a solution comprising the solute dissolved in the liquid; directing the heated solution through a continuous tube wherein the continuous tube has a first end for receiving the solution, a continuous flow-through passageway disposed in an ultrasonic heat exchanger, and a second end for discharging a product stream; treating the heated solution as the solution passes through the continuous flow-through passageway disposed in the ultrasonic heat exchanger to form the product stream comprising nanometer size particles in the liquid; optionally, collecting the product stream in a product receiving vessel; and optionally, filtering the product stream.

Abstract: A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

Abstract: (1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance.

Abstract: In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: Disclosed herein is a semiconductor device including: a gate electrode; a gate insulating film; an organic semiconductor layer; and source and drain electrodes.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.

Abstract: A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

Abstract: A method for manufacturing a semiconductor device includes: forming a source electrode and a drain electrode on a substrate; forming an organic semiconductor layer including a ? conjugated organic compound at least between the source electrode and the drain electrode; applying an application liquid on the organic semiconductor layer, the application liquid being made of a polymer of an alicyclic compound dissolved in a paraffin hydrocarbon solvent that is a carbocyclic compound without having aromaticity; forming a gate insulation layer including the polymer of the alicyclic compound by removing the paraffin hydrocarbon solvent from the application liquid; and forming a gate electrode on the gate insulation layer.

Abstract: Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (I): where R? is alkyl having from about 1 to about 24 carbon atoms; R? is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

Abstract: An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide thicknesses may be used for lower voltage transistors, memory array transistors, and higher voltage transistors.

Abstract: The invention relates to an organic semiconductor material with a high carrier mobility, which is capable of obtaining favorable semiconductor characteristics when used in an organic semiconductor device, and an organic transistor using the same. More specifically, the present invention has a following structure including an oligothiophene part and a connecting part G; where, R1 and R2 are a hydrogen, a alkyl group, an alkoxy group, an aryl group, or an alkenyl group, R1 and R2 may be identical or different from each other, and where n is an integer. In the organic semiconductor material, the structure of the connecting part G may be any of the following: where, R3 and R4 are a hydrogen, an alkyl group, an alkoxy group, an aryl group, or a alkenyl group, R3 and R4 may be identical or different from each other, and where n is an integer of 1 to 3.

Abstract: A method for forming a pattern includes the steps of forming a resin pattern through printing on a substrate, forming a water-repellent pattern in such a way that an opening bottom of the resin pattern is covered with a fluorine based material by feeding the fluorine based material from the top of the resin pattern, forming an open window in the water-repellent pattern by removing the resin pattern, and forming a desired pattern composed of a pattern-forming material by feeding the pattern-forming material into the open window of the water-repellent pattern.

Abstract: Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

Abstract: An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or fluorinated benzene residue, unsubstituted or fluorinated thiophene residue, unsubstituted or fluorinated thienothophene residue; R1 represents carbonyl group, cyano group or C1-C6 fluorinated alkyl group; R2 represents halogen atom, cyano group, carbonyl group or acetyl group.