Abstract: Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

Abstract: For driving at least two HF power generators that supply a plasma process with HF power, at least one drive signal is generated and at least one pulse signal is generated. Then, based on the at least one drive signal and the at least one pulse signal, a pulsed HF power signal is generated by each of the at least two HF power generator.

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract: An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.

Abstract: The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.

Abstract: A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A sterilisation or disinfecting system in which non-thermal plasma is generated in pulses, in which pulses of microwave frequency energy are used to sustain each plasma pulse, and a detectable characteristic of each pulse of microwave energy is used to trigger a radiofrequency strike pulse which strikes the plasma. The system includes a strike signal generation circuit arranged to condition and/or process the signal from the microwave signal coupler to form a control signal based on the detectable characteristic, which may be the rising edge or amplitude of the pulse.

Abstract: A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed.

Abstract: A system has a first RF generator and a second RF generator. The first RF generator controls the frequency of the second RF generator. The first RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit scales the frequency of the first RF generator to control the frequency of the second RF generator.

Abstract: A plasma generating apparatus includes: a power supply one of whose electrodes is connected to vacuum chamber walls of N vacuum chambers; an oscillator which outputs a pulse signal at every predetermined period; N pulse amplifying circuits which are connected in parallel to the oscillator as well as to the other electrode of the power supply, and each of which amplifies the pulse signal and supplies the amplified pulse signal to a corresponding one of N electrodes disposed in the N vacuum chambers; and at least (N-1) timing generating circuits which are connected between the oscillator and at least (N-1) pulse amplifying circuits, and which delay the pulse signal by respectively different delay times so that at any specific time, the pulse signal is supplied to only one of the pulse amplifying circuits.

Abstract: A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

Abstract: Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of heterostructures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.

Abstract: A spheromak is a plasma of ions and electrons formed into a toroidal shape. A spheromak plasma can include electrons and ions of nearly equal amounts such that it is essentially charge neutral. It contains large internal electrical currents and their associated internal magnetic fields arranged so that the forces within the spheromak are nearly balanced. The spheromak described herein is observed to form around an electric arc in partial atmosphere, and is observed to be self-stable with no external magnetic containment.

Abstract: A hybrid plasma reactor includes a first plasma chamber for providing a first ring-shaped plasma discharge space, second plasma chambers providing a second plasma discharge space connected to the first plasma discharge space and coupled to magnetic flux channels, a hybrid plasma source including magnetic cores, which partially surround the first plasma chamber and have magnetic entrances forming the magnetic flux channels, and primary winding coils wound in the magnetic cores and complexly generating ring-shaped transformer-coupled plasma in the first plasma discharge space and magnetic flux channel coupled plasma in the second plasma discharge space, and an AC switching power supply for supplying plasma generation power to the primary winding coils. The hybrid plasma reactor can complexly generate magnetic flux channel coupled plasma and transformer coupled plasma so that it has a high control capability for plasma ion energy and a wide operation region from a low-pressure region to a high-pressure region.

Abstract: The plasma temperature control apparatus includes a plasma generating section 40 that turns a plasma-generating gas into plasma, and a plasma-generating gas temperature control section 30 that controls the temperature of the plasma-generating gas supplied to the plasma generating section 40. The temperature of the plasma generated in the plasma generating section 40 is controlled by controlling the temperature of the plasma-generating gas.

Abstract: An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

Abstract: Systems and methods for soft pulsing are described. One of the systems includes a master radiofrequency (RF) generator for generating a first portion of a master RF signal during a first state and a second portion of the master RF signal during a second state. The master RF signal is a sinusoidal signal. The system further includes an impedance matching circuit coupled to the master RF generator via an RF cable to modify the master RF signal to generate a modified RF signal and a plasma chamber coupled to the impedance matching circuit via an RF transmission line. The plasma chamber is used for generating plasma based on the modified RF signal.

Abstract: A multi-segment electrode assembly having a plurality of electrode segments for modifying a plasma in a plasma processing chamber is disclosed. There is included a first powered electrode segment having a first plasma-facing surface, the first powered electrode segment configured to be powered by a first RE signal. There is also included a second powered electrode segment having a second plasma-facing surface, the second powered electrode segment configured to be powered by a second RE signal. The second powered electrode segment is electrically insulated from the first powered electrode segment, while at least one of the first plasma-facing surface and the second plasma-facing surface is non-planar.

Abstract: A plasma reactor having multi discharging tubes is disclosed, through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.

Abstract: An ignition system for a plasma jet ignition plug that enables a reduction in production cost and provides excellent ignition performance through improvement of plasma formation efficiency. The ignition system includes a plasma jet ignition plug having a center electrode, a ground electrode, and a cavity surrounding at least a portion of a gap formed between the center electrode and the ground electrode to form a discharge space, and a voltage application section for applying voltage across the gap. The ignition system further includes a capacitance section having a capacitance and provided in parallel with the plasma jet ignition plug between the plasma jet ignition plug and the voltage application section.

Abstract: A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

Abstract: An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

Abstract: An ionic wind engine unit for cooling semiconductor circuit assemblies includes a curved micro-spring and an associated electrode that are maintained apart at an appropriate gap distance such that, when subjected to a sufficiently high voltage potential (i.e., as determined by Peek's Law), current crowding at the spring's tip portion creates an electrical field that sufficiently ionizes neutral molecules in a portion of the air-filled region surrounding the tip portion to generate a micro-plasma event. In one engine type the electrode is a metal pad, and in a second engine type the electrode is a second micro-spring. Ionic wind cooling is generated, for example, between an IC die and a base substrate in a flip-chip arrangement, by controlling multiple engines disposed on the facing surfaces to produce an air current in the air gap region separating the IC device and base substrate.

Abstract: Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

Abstract: A point of use irrigation water fertigation system utilizes plasma production of nitrogen-bearing species. Soluble nitrogen-bearing species are generated using an atmospheric air plasma treatment of an irrigation water supply. A plasma is generated by a tube having an air intake. A high frequency generator generates atmospheric plasma. The end of the tube is placed above the surface of the irrigation water supply and the plasma emanating from the tube generates nitrogen species in the water. The non-thermal plasma discharge efficiently produces highly reactive radicals and NOx species that have impact on water chemistry including inactivation of microorganisms with high efficacy and accelerated removal of persistent organic pollutants such as perfluorinated compounds (PFCs) from water samples. Plasma ignition can be initiated with a low flow of helium gas injection. Upon ignition, the gas is transitioned to a helium/room air mix, immediately followed by a transition to ambient room air only.

Abstract: An apparatus includes an electromagnetic waveguide; an iris structure providing an iris in the waveguide. The iris structure may define an iris hole, a first iris slot at a first side of the iris hole, and a second iris slot at a second side of the iris hole. A plasma torch is disposed within the iris hole. An electric field in the waveguide changes direction from the first iris slot to the second iris slot. The plasma torch generates a plasma which is substantially symmetrical around a longitudinal axis of the plasma torch, such that the plasma may have a substantially toroidal shape. In some embodiments, a dielectric material is disposed in the iris hole, outside of the plasma torch. In some embodiments, the height of at least one of the iris slots is greater at the ends thereof than in the middle.

Abstract: A hardware interlock system for monitoring operation of RF plasma sources. The hardware interlock system includes an RF generator operative to transmit a forward RF power used to generate plasma in a plasma chamber. A derivative based hardware interlock circuit is coupled in series with the RF generator. The derivative based hardware interlock circuit determines a reflected RF power derivative value indicative of the speed of change in reflected RF power values in the RF plasma ion source. An analog/digital (A/D) logic circuit is coupled with the derivative based hardware interlock circuit. The A/D logic circuit can shut down the RF generator output when the reflected RF power derivative value exceeds a threshold.

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: An ion source is provided that includes at least one electron gun. The electron gun includes an electron source for generating a beam of electrons and an inlet for receiving a gas. The electron gun also includes a plasma region defined by at least an anode and a ground element, where the plasma region can form a plasma from the gas received via the inlet. The plasma can be sustained by at least a portion of the beam of electrons. The electron gun further includes an outlet for delivering at least one of (i) ions generated by the plasma or (ii) at least a portion of the beam of electrons generated by the electron source.

Abstract: Systems and methods for using variables based on a state associated with a plasma system. A method includes determining whether the state associated with the plasma system is a first state or a second state and determining a first variable upon determining that the state is the first state. The first variable is determined based on a measurement at a communication medium. The method further includes determining a second variable upon determining that the state is the second state. The second variable is determined based on a measurement at the communication medium. The method includes determining whether the second variable exceeds a first threshold, providing an instruction to reduce power supplied to a plasma chamber upon determining that the second variable exceeds the first threshold, and providing an instruction to increase power supplied to the plasma chamber upon determining that the second variable is below the first threshold.

Abstract: A technique for processing a workpiece is disclosed. In accordance with one exemplary embodiment, the technique is realized as a method for processing a substrate, where the method comprises: providing the workpiece in the chamber; providing a plurality of electrodes between a wall of the chamber and the workpiece; generating a plasma containing ions between the plurality of electrodes and the workpiece, ion density in an inner portion of the plasma being greater than the ion density in an outer portion of the plasma portion, the outer portion being between the inner portion and the wall of the chamber; and providing a bias voltage to the plurality of electrodes and dispersing at least a portion of the ions in the inner portion until the ion density in the inner portion is substantially equal to the ion density in the periphery plasma portion.

Abstract: Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.

Abstract: A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber.

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract: Certain embodiments described herein are directed to devices that can be used to sustain a low flow plasma. In certain examples, the low flow plasma can be sustained in a torch comprising an outer tube and an auxiliary tube within the outer tube. In some examples, the auxiliary tube comprises an effective length to match the shape of a low flow plasma sustained in the torch using a flat plate electrode. Methods and systems using the torches are also described.

Abstract: An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Abstract: This disclosure describes systems, methods, and apparatus for ensuring desirable ignition of plasma in a plasma processing chamber via providing increased instantaneous power during an ignition period for both continuous wave (CW) and pulsed power delivery. The systems, methods, and apparatus can be applied to both initial ignition of a plasma and reignition of a plasma where pulsed power delivery leads to periodic extinction of the plasma.

Abstract: An apparatus is provided. The apparatus includes a plasma generation element physically coupled to a first main electrode. The plasma generation element includes at least a first open end and a second open end. Each open end defines a nozzle such that the first open end directs an ablative plasma to a second main electrode and the second open end directs the ablative plasma to a third main electrode.

Abstract: This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract: There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.

Abstract: A remote plasma generation apparatus that can enhance plasma processing efficiency by centralizing remote plasma to a processing object is provided. The remote plasma generation apparatus includes: a dielectric support body that has a main body that is connected to a discharge gas injection opening and a nozzle portion that is connected to a plasma outlet; a driving electrode that is fixed to the main body and that receives application of an AC voltage from a power supply unit to generate plasma at internal space of the main body; and a ground electrode that supports a processing object at the outside of the nozzle portion. The nozzle portion includes an inclined surface that is integrally connected to the main body, and by forming a width of the plasma outlet to be smaller than a width of the main body, remote plasma is concentrated to the processing object.

Abstract: Various embodiments include a device for generating plasma and for directing an flow of electrons towards a specific target; the device comprises a hollow cathode; a main electrode at least partially placed inside the cathode; a resistor, electrically earthing the main electrode; a substantially dielectric tubular element extending through a wall of the cathode; a ring-shaped anode placed around the tubular element and earthed; and an activation group which is electrically connected to the cathode and is able to reduce the electric potential of the cathode of at least 8 kV in about 10 ns.