Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract: A device for generating short-wavelength electromagnetic radiation based on a gas discharge plasma calls for suppressing droplet formation of liquid coating material that is applied to disk electrodes rotated at high rotational frequencies and ensuring a uniform layer thickness. The device has two rotating disk electrodes, each having two lateral surfaces and a circumferential surface, provided with a reservoir with liquid coating material and a wiper for removing excess coating material. The wiper, which has a U-shaped form comprising two legs parallel to the lateral surfaces of the disk electrode and a crosspiece transversely over the circumferential surface, is at least axially movably supported and has impingement elements at the legs so that it is automatically axially adjustable by means of the coating material which is transported on the lateral surfaces and pressed into the gap during the rotation of the disk electrode.

Abstract: Disclosed herein is a field enhanced inductively coupled plasma processing apparatus including a process chamber having a dielectric lid, and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes at least one horizontal inductive coil configured to inductively couple RF energy into the process chamber to form and maintain plasma in the process chamber, at least one power applying electrode electrically connected to the horizontal inductive coil to capacitively couple the RF energy into the process chamber, a first positioning mechanism coupled to the power applying electrode to change a horizontal position of the power applying electrode, and an RF generator coupled to the at least one power applying electrode. The apparatus further includes a vertical inductive coil connected to the horizontal inductive coil, and a second positioning mechanism shifting an entire vertical position of the vertical inductive coil or changing the pitch thereof.

Abstract: A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Abstract: In accordance with one embodiment of the present invention, the dielectric discharge chamber of a generally axially symmetric ion source has a hollow cylindrical shape. One end of the discharge chamber is closed with a dielectric wall. The working gas is introduced through an aperture in the center of this wall. The ion-optics grids are at the other end of the discharge chamber, which is left open. The inductor is a helical coil of copper conductor that surrounds the cylindrical portion of the dielectric discharge chamber. The modification that produces uniformity about the axis of symmetry is a shorted turn of the helical-coil inductor at the end of the inductor closest to the ion-optics grids.

Abstract: A plasma source generates a plasma beam that is extracted from a plasma generated by electric and magnetic fields. An RF electrode device includes an excitation electrode having an excitation area, and a plasma space is arranged between extraction electrode and excitation area. The plasma, relative to the extraction electrode is at a higher potential which accelerates positive plasma ions, and the plasma and the extracted plasma beam are influenced by a magnetic field. At least one magnet north pole and one magnetic south pole generate the magnetic field. Each are arranged such that a curved magnetic field projecting into the interior of the plasma space is formed. At least one of the north or south poles is embodied in elongate fashion to form a tunnel-like region in the plasma, in which charged particles are held and along which the latter can propagate.

Abstract: In some aspects, nozzles for plasma torches can include a nozzle body having a proximal end and a distal end that define a nozzle body length and a longitudinal axis. The body can include an exit orifice defined by the distal end; a plenum extending from the proximal end to a plenum floor, a distance from the plenum floor to the distal end defining a plenum floor thickness, and a distance from the plenum floor to the proximal end defining a proximal end height; and a bore extending from the plenum floor to the exit orifice that has a bore length and a bore width. The nozzle body has a nozzle width in a direction transverse to the longitudinal axis. The nozzle body length is greater than the width and a ratio of the proximal end height to the plenum floor thickness is less than 2.0.

Abstract: In one aspect, a system includes a generator configured to generate and tune a frequency of a supply signal. The system includes an auto-matching network configured to receive the supply signal and to generate an impedance-matched signal for use in powering a plasma system. In some implementations, during a first stage of an impedance matching operation, the generator is configured to tune the frequency of the supply signal until the generator identifies a frequency for which the reactance of the generator and the reactance of the load are best matched. In some implementations, during a second stage of the impedance matching operation, the auto-matching network is configured to tune a tuning element within the auto-matching network until the auto-matching network identifies a tuning of the tuning element for which the resistance of the generator and the resistance of the load are best matched.

Abstract: Described are methods and apparatuses, including computer program products, for igniting and/or sustaining a plasma in a reactive gas generator. Power is provided from an ignition power supply to a plasma ignition circuit. A pre-ignition signal of the plasma ignition circuit is measured. The power provided to the plasma ignition circuit is adjusted based on the measured pre-ignition signal and an adjustable pre-ignition control signal. The adjustable pre-ignition control signal is adjusted after a period of time has elapsed.

Abstract: Plasma processing apparatuses and techniques for processing substrates, which include the use of synchronized RF pulsing of a first RF signal and a delayed-and-shortened second RF signal. The first RF signal may be the primary plasma-generating RF signal and the second RF signal may be the RF bias signal or vice versa. Alternatively or additionally, the first RF signal may be the high frequency RF signal and the second RF signal may be the lower frequency RF signal. Either the first RF signal or the second RF signal may act as the master, with the other acting as the slave signal. Alternatively, an external circuit may be employed as a master to control both the first RF signal and the second RF signal as slave signals. Track-and-hold techniques and circuits are provided to ensure accurate measurement for process control and other purposes.

Abstract: A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.

Abstract: An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface. Following breakdown, a sequence of one or more lower voltage and lower current pulses is applied to said electrodes, with a low “simmer” current being sustained through the plasma between pulses, preventing total plasma recombination and allowing the plasma kernel to move toward a free end of the electrodes with each pulse.

Abstract: A method for calibrating a high frequency measuring device so as to accurately measure plasma processing parameters within a chamber. A calibration parameter is calculated from a first set of three reference loads measured by a high frequency measurement device. A second calibration parameter is calculated from S parameters measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. A second set of three reference loads, which include the impedance previously calculated and encompass a range narrower than that encompassed by the first set of three reference loads, is measured with the reference loads in the chamber.

Abstract: A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.

Abstract: Systems and methods for uniformly implanting materials on substrates using directed magnetic fields are provided. One such system includes a chamber configured to receive a preselected material and to enclose a first substrate, first and second rotating assemblies configured to facilitate an implantation of the preselected material onto first and second surfaces of the first substrate and including first and second rotating magnet sub-assemblies configured to direct magnetic fields onto the first and second surfaces, and an RF energizer configured to apply RF energy to the first substrate, where the first magnetic field and the second magnetic field combine to form a resultant magnetic field that is substantially parallel along the first surface, and where the implantation of the preselected material onto the first substrate occurs based on a combination of the RF energy and the resultant magnetic field.

Abstract: A shield device for a plasma arc torch includes an inner shield member defining an inner auxiliary gas chamber and an outer shield member surrounding the inner shield member. An outer auxiliary gas chamber is defined between the inner shield member and outer shield member. The shield device allows an auxiliary gas flow to be split into a first flow of auxiliary gas through the inner auxiliary gas chamber and a second flow of auxiliary gas through the outer auxiliary gas chamber. The inner shield member and the outer shield member are configured to be mounted to the plasma arc torch as an integral unit.

Abstract: Systems, methods and apparatus for reducing instabilities in a plasma-based processing system are disclosed. An exemplary method includes applying power to a plasma with a power amplifier; determining whether low frequency instability oscillations are present or high frequency instability oscillations are present in the plasma; and altering, based upon whether high or low frequency instability oscillations are present, an impedance of a load that is experienced by the power amplifier, the load experienced by the power amplifier including at least an impedance of the plasma.

Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.

Abstract: In a high-frequency power supply for plasma having a housing and a high-frequency circuit substrate placed inside the housing, elements for supplying a high-frequency current to a high-frequency inductive coil are mounted on the high-frequency circuit substrate , a cooling block for cooling the high-frequency circuit substrate is provided, and a coolant path a for allowing a coolant to flow through is formed inside the cooling block so that the coolant is allowed to flow through the coolant path when a high-frequency current is supplied and the coolant is not allowed to flow through the coolant path when a high-frequency current is not supplied.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The pedestal temperature controller is configured to regulate the temperature of the semiconductor processing chamber through a pedestal disposed at the bottom of the semiconductor processing chamber.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.

Abstract: A system includes a control module, a detection module, and a reaction module. The control module is configured to receive a sensor signal indicating a power characteristic of an output power provided from a power generator to a load. The load is separate from the control module and the power generator. The detection module is configured to (i) detect a shift parameter of the power characteristic based on the sensor signal, (ii) compare the shift parameter to a first threshold, and (iii) indicate whether the shift parameter has exceeded the first threshold and not a second threshold. The reaction module is configured to indicate that a low-level abnormality exists in the load in response to the shift parameter exceeding the first threshold and not the second threshold.

Abstract: A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced.

Abstract: The embodiments of the invention include a method for controlling plasma conditions of a glow discharge system using the integrated electron (or ion) pulse area extracted from the total lamp current. The method of using an integrated electron/ion pulse area for controlling plasma conditions allows for controlled analysis of conductive, non-conductive and layered materials without the need for estimation of plasma voltages. The method allows for control of sputter rates and plasma emissions that cannot be achieved using other methods such as capacitive divider calculations where actual thicknesses and dielectric constants are not known or predefined.

Abstract: A plasma source includes a first rod forming a quarterwave antenna, surrounded by at least one parallel rod forming a coupler and which is substantially the same length as the first rod, set to a reference potential, the coupler rods being evenly distributed radially about the first rod, at a distance of around one-fifth to one-twentieth of the quarter of the wavelength.

Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Abstract: Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator.

Abstract: A device for quick closing of an electric circuit having a main spark gap with main electrodes and a triggering device. The triggering device has an auxiliary spark gap with auxiliary electrodes for igniting an arc in the main spark gap. The auxiliary electrodes are shielded from the main spark gap by a shielding unit having channel means extending therethrough from an auxiliary spark gap facing side to a main spark gap facing side of the shielding unit. The device further includes a nozzle with a first end being most close to the auxiliary spark gap and a second end most close to the main spark gap. The first end has an inlet opening that is in connection with the channel means and the second end has an outlet opening. The invention also relates to a corresponding method and to a use of the device.

Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Abstract: A method for controlling pulsed power that includes measuring a first pulse of power from a power amplifier to obtain data. The method also includes generating a first signal to adjust a second pulse of delivered power, the first signal correlated to the data to minimize a power difference between a power set point and a substantially stable portion of the second pulse. The method also includes generating a second signal to adjust the second pulse of delivered power, the second signal correlated to the data to minimize an amplitude difference between a peak of the second pulse and the substantially stable portion of the second pulse.

Abstract: Methods and apparatus to reduce particle-induced defects on a substrate are provided. In certain embodiments, the methods involve decreasing plasma spread prior to extinguishing the plasma. The plasma is maintained at the decreased plasma spread while particles are evacuated from the processing chamber. In certain embodiments, the methods involve decreasing plasma power prior to extinguishing the plasma. The low-power plasma is maintained while particles are evacuated from the processing chamber.

Abstract: An in-liquid plasma electrode according to the present invention is an in-liquid plasma electrode for generating plasma in a liquid and has an electrically conductive member having an electric discharge end surface in contact with the liquid, and an electrically insulating member covering an outer periphery of the conductive member at least except the electric discharge end surface. Preferably, d and x satisfy ?2d?x?2d, where d is a length of a minor axis of the cross section when a conductive end portion of the electrically conductive member having the electric discharge end surface has an approximately circular cross section, or d is a length of a short side of the cross section when the conductive end portion has an approximately rectangular cross section, and x is a distance from a reference plane to a plane containing the electric discharge end surface when the reference plane is an end surface of the electrically insulating member that is approximately parallel with the electric discharge end surface.

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract: A pair of coaxial electrodes 10 that face each other, a discharge-environment-maintaining device 20, and a voltage-applying device 30 are provided. Each coaxial electrode 10 includes a center electrode 12, a guide electrode 14 which surrounds the front end portion of the facing center electrode, and an insulation member 16 which insulates the center electrode and the guide electrode from each other. The insulation member 16 is formed of partially porous ceramics including an insulative dense portion 16a and a porous portion 16b. The insulative dense portion 16a includes a reservoir 18 which holds a plasma medium therein, and by the porous portion 16b, the inner surface of the reservoir 18 communicates with a gap between the center electrode 12 and the guide electrode 14 through the inside of the insulative dense portion 16a.

Abstract: A signal generating system comprises a signal generator (14) for generating an electrical signal at a predetermined frequency; an impedance matching circuit (16), the electrical signal being supplied from the signal generator (14) via the impedance matching circuit (16) to a reactive load (10) in use; and an impedance matching control system (30) for detecting the electrical signal between the signal generator and the reactive load and for adjusting the impedance matching circuit (16) to achieve a predetermined condition. The impedance matching circuit control system (30) comprises a heterodyne circuit, and the system further comprises a heterodyne frequency generator (48) coupled to the signal generator (14) to generate a second, heterodyne frequency from the predetermined frequency from the signal generator. This second, heterodyne frequency is mixed with the detected signal to generate sum and difference signals.

Abstract: A light source is powered by a magnetron and has a quartz crucible having a plasma void with an excitable fill, from which light radiates in use. Two aluminum attachment blocks are attached together and the block is attached to a casing of the magnetron by screws—not shown. The quartz crucible is attached to the block by a Faraday cage, in the form of a perforate metal enclosure secured at its rim to the block. An output formation of the magnetron has a conductive, copper cap fitted in electrical contact with it. The cap is extended by a copper rod. The rod extends through the blocks into a bore in the crucible for coupling microwaves from the magnetron into the crucible. An airspace is provided around the cap in the block. From the cap, the rod extends with negligible air gap in an alumina ceramic tube through the airspace and a boss of the block located in an aperture in an end wall of the block.

Abstract: Determining a high frequency operating parameter in a plasma system including a plasma power supply device coupled to a plasma load using a hybrid coupler having four ports is accomplished by: generating two high frequency source signals of identical frequency, the signals phase shifted by 90° with respect to one another; generating a high frequency output signal by combining the high frequency source signals in the hybrid coupler; transmitting the high frequency output signal to the plasma load; detecting two or more signals, each signal corresponding to a respective port of the hybrid coupler and related to an amplitude of a high frequency signal present at the respective port; and based on an evaluation of the two or more signals, determining the high frequency operating parameter.

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots.

Abstract: Methods of increasing the total power of non-thermal plasma power systems are described. Various embodiments of the present invention provide non-thermal plasma reactor assemblies and methods of operating said assemblies, each assembly comprising: (a) at least two non-thermal plasma reactors, each reactor comprising at least one inlet circumferential gas flow inlet apparatus, an electrode, and a flow restricted exit portal, said reactor configured to eject a jet of non-thermal plasma external to said reactor; (b) said at least two non-thermal plasma reactors configured to work in tandem with one another such that a first reactor electrode can be maintained at a high voltage electric potential relative to a second reactor electrode, said first and second reactor electrodes forming an electrode pair able to maintain a non-thermal plasma discharge between the first and second reactor electrodes.

Abstract: A gas conversion system using microwave plasma is provided. The system includes: a microwave waveguide; a gas flow tube passing through a microwave waveguide and configured to transmit microwaves therethrough; a temperature controlling means for controlling a temperature of the microwave waveguide; a temperature sensor disposed near the gas flow tube and configured to measure a temperature of gas flow tube or microwave waveguide; an igniter located near the gas flow tube and configured to ignite a plasma inside the gas flow tube so that the plasma converts a gas flowing through the gas flow tube during operation; and a plasma detector located near the gas flow tube and configured to monitor the plasma.

Abstract: A system and method are provided for delivering power to a dynamic load. The system includes a power supply providing DC power having a substantially constant power open loop response, a power amplifier for converting the DC power to RF power, a sensor for measuring voltage, current and phase angle between voltage and current vectors associated with the RF power, an electrically controllable impedance matching system to modify the impedance of the power amplifier to at least a substantially matched impedance of a dynamic load, and a controller for controlling the electrically controllable impedance matching system. The system further includes a sensor calibration measuring module for determining power delivered by the power amplifier, an electronic matching system calibration module for determining power delivered to a dynamic load, and a power dissipation module for calculating power dissipated in the electrically controllable impedance matching system.

Abstract: An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

Abstract: One embodiment is directed to a plasma source comprising a cavity and at least first and second electrodes. The plasma source is configured to, during a first portion of each cycle, bias the first electrode as a cathode and use the second electrode as an anode, during a second portion of each cycle, apply an ion flush bias to the first and second electrodes, during a third portion of each cycle, bias the second electrode as a cathode and use the first electrode as an anode, and during a fourth portion of each cycle, apply an ion flush bias to the first and second electrodes. Other embodiments are disclosed.

Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: An electrohydrodynamic fluid accelerator includes an emitter electrode and leading surfaces of a collector electrode that are substantially exposed to ion bombardment. Heat transfer surfaces downstream of the emitter electrode along a fluid flow path include a first portion not substantially exposed to the ion bombardment that is conditioned with a first ozone reducing material. The leading surfaces of the collector electrode are not conditioned with the first ozone reducing material, but may include a different surface conditioning. The downstream heat transfer surfaces and the leading surfaces can be separately formed and joined to form the unitary structure or can be integrally formed. The electrohydrodynamic fluid accelerator can be used in a thermal management assembly of an electronic device with a heat dissipating device thermally coupled to the conditioned heat transfer surfaces.

Abstract: A laser sustained plasma light source includes a plasma bulb containing a working gas flow driven by an electric current sustained within the plasma bulb. Charged particles are introduced into the working gas of the plasma bulb. An arrangement of electrodes maintained at different voltage levels drive the charged particles through the working gas. The movement of the charged particles within the working gas causes the working gas to flow in the direction of movement of the charged particles by entrainment. The resulting working gas flow increases convection around the plasma and increases laser to plasma interaction. The working gas flow within the plasma bulb can be stabilized and controlled by control of the voltages present on the each of the electrodes. A more stable flow of working gas through the plasma contributes to a more stable plasma shape and position within the plasma bulb.

Abstract: (EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the se