Abstract: Methods for processing a substrate in a plasma processing, chamber employing a plurality of RF power supplies. The method includes pulsing at a first pulsing frequency a first RF power supply to deliver a first RF signal between a high power state and a low power state. The method further includes switching the RF frequency of a second RF signal output by a second RF power supply between a first predefined RF frequency and a second RF frequency responsive to values of a measurable chamber parameter. The first RF frequency and the second RF frequencies and the thresholds for switching were learned in advance during a learning phase while the first RF signal pulses between the high power state and low power state at a second RF frequency lower than the first RF frequency and while the second RF power supply operates in different modes.

Abstract: One embodiment of the present disclosure provides an atmospheric pressure plasma generating apparatus. The apparatus includes an upper electrode having an air permeable inner structure, a lower electrode separated from the upper electrode, and a power source applying voltage to the upper electrode or the lower electrode. The apparatus further includes a plasma generating region placed in a space between the upper electrode and the lower electrode. The upper electrode serves as a passageway using the air permeable inner structure, through which reaction gas is supplied to the plasma generating region from outside.

Abstract: Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line.

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract: In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.

Abstract: A plasma treatment equipment includes: a plasma starting and stabilizing unit (A) having an insulating material such as a dielectric material having an elongated hole connecting to a plasma ejection portion, a triggering and discharge-stabilizing electrode, and an intense electric field electrode mounted thereon; and a plasma generating unit (B) including the insulating material having the elongated hole and a plasma generating electrode configured to perform main plasma generation at the time of operation, wherein the triggering and discharge-stabilizing electrode, the intense electric field electrode, and the plasma generating electrode are provided in such a manner that all the electrodes are not exposed and covered with the dielectric material for the entire space of one or more of the elongated hole which allows passage of gas from the upstream, starting of the plasma and generation of the plasma, and ejection of the plasma jet.

Abstract: In an atmospheric inductively coupled plasma generating apparatus, impedance matching between a coil for plasma generation and an RF power source is effected at a high speed. A control method and/or condition for the output frequency of an oscillator which supplies a power to the coil for plasma generation or a control method and a control condition for the output power of the oscillator are changed appropriately in accordance with a generation state of a plasma. When a plasma is not generated, the output frequency is controlled according to a first condition and, when a plasma is generated, the output frequency is controlled according to a second condition different from the first condition. When a plasma is not generated, the output power is controlled according to a third condition and, when a plasma is generated, the output power is controlled according to a fourth condition different from the third condition.

Abstract: A microhollow cathode discharge assembly capable of generating a low temperature, atmospheric pressure plasma micro jet is disclosed. The microhollow assembly has two electrodes: an anode and a cathode separated by a dielectric. A microhollow gas passage is disposed through the three layers. In some embodiments, the passage is tapered such that the area at the first electrode is larger than the area at the second electrode. When a potential is placed across the electrodes and a gas is directed through the gas passage, then a low temperature micro plasma jet can be created at atmospheric pressure or above.

Abstract: The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation.

Abstract: In an ignition circuit for igniting a plasma fed with alternating power in a gas discharge chamber, having two line sections for connection to an alternating power source and at least one line section for connection to a housing earth of the gas discharge chamber, at least one series connection of a non-linear element and an energy store is connected between the line sections for connection to an alternating power source, and the line section for connection to a housing earth of the gas discharge chamber is connected to a connection node between an energy store and a non-linear element.

Abstract: A method for generating plasma pulses in which at least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function and the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method provides at least one source and at least one reflection element for realizing the predetermined field strength. The apparatus for generating plasma pulses comprises at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device and is configured in such a manner that a method for generating plasma pulses can be executed.

Abstract: Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

Abstract: Provided is an apparatus, such as an arc mitigating device, which can include a first plasma generation device and a second plasma generation device. The second plasma generation device can include a pair of opposing and spaced apart electrodes and a low voltage, high current energy source connected therebetween. A conduit can be configured to direct plasma between the first and second plasma generation devices, such that the second plasma generation device receives plasma generated by the first plasma generation. The plasma from the first plasma generation device can act to reduce the impedance of an area between the pair of opposing electrodes sufficiently to allow an arc to be established therebetween due to the low voltage, high current energy source.

Abstract: A system, method and apparatus for injecting reactive species and ions from an ambient plasma ionization source into an atmospheric pressure ion mobility spectrometer.

Abstract: An electrodeless plasma lamp and a method of generating light are described. The lamp may comprise a lamp body including a dielectric material. The bulb is positioned proximate the lamp body and contains a fill that forms a plasma when radio frequency (RF) power is coupled to the fill. The conductive element is located within the lamp body and configured to enhance coupling of the RF power to the fill. The lamp may include a feed coupled to the RF power source and configured to radiate power into the lamp body. The at least one conductive element is configured to enhance the coupling of radiated power from the feed to the fill. In an example, two spaced apart conductive elements may be located within the lamp body. The bulb may be an elongated bulb having opposed ends, each opposed end of the bulb being proximate a corresponding conductive element.

Abstract: Provided is a plasma treatment apparatus using a leakage current transformer, the apparatus, including: a chamber which provides a closed space in which plasma is formed, and receives a treated sample in an inner part thereof; an exhaust unit for forming the inner part of the chamber in a vacuum state; plasma generation electrodes fixed in the chamber, positive and negative poles of which are installed to be opposed to each other; a variable power supply which is installed in an outer part of the chamber and supplies a power source to the plasma generation electrodes; and a leakage current transformer which is installed between the variable power supply and the plasma generation electrodes and adjusts voltage and current applied to the plasma generation electrodes.

Abstract: A plasma propulsion nozzle incorporates a cylinder having an inlet and an outlet. A plurality of substantially cylindrical planarly disbanded electrodes with sandwiched dielectric spacers is cascaded in an array to be concentrically expanding from the inlet through an interior chamber to the outlet for a nozzle. A voltage source applies a periodic signal with rapidly reversing polarity to the electrodes with differential phase applied to adjacent electrodes in the array creating and expelling plasma clusters at each dielectric spacer inducing flow from the nozzle outlet to produce thrust.

Abstract: Operation of a plasma supply device having at least one switching bridge with at least two switching elements, and configured to deliver a high frequency output signal having a power of >500 W and a substantially constant fundamental frequency >3 MHz to a plasma load is accomplished by determining at least one operating parameter, at least one environmental parameter of at least one switching element and/or a switching bridge parameter, determining individual drive signals for the switching elements taking into account the at least one operating parameter, the at least one environmental parameter and/or the switching bridge parameter, and individually driving the switching elements with a respective drive signal.

Abstract: A new device based on very short pulsed discharges, generating plasmas balls and plumes over very long distances (up to several meters). These plasma balls travel in a dielectric guide at the end of which there is generation of an apparent plasma plume like zone, with a shape and intensity dependent on the discharge repetition rate. A secondary mixture plasma can be produced close to a given surface by adding other gas fluxes in the main gas stream. The plasma balls can be generated in gases at a repetition rate in the range from single shot to multi-kilohertz.

Abstract: A medical plasma generator and its application are provided. In the medical plasma generator, a gas supply tube supplies a gas required for the generation of plasma. An internal electrode in a tube shape has a joined part joined to the end of the gas supply tube, and an extended part extended from the joined part. The extended part has a smaller diameter than the joined part, thereby allowing the gas to jet out with an increased speed when the gas passes through the internal electrode. A high voltage is applied to the internal electrode. A glass tube encloses the extended part of the internal electrode and protruding from the internal electrode. A ground electrode is formed on an outer surface of a protruding part of the glass tube. Interaction between the ground electrode and the internal electrode leads to ionization and discharge of the gas passing through the internal electrode, thereby generating plasma. A tubular cover covers the glass tube and is extended beyond the glass tube.

Abstract: An apparatus for producing plasma comprises a first electrode and a porous element. The first electrode is in direct contact with a first side of the porous element. A second electrode is positioned adjacent a second side of the porous element, at least a portion of the second electrode being spaced from the second side of the porous element so as not to be in direct contact with the second side of the porous element. A plasma generating region is defined adjacent the second electrode.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract: A microhollow cathode discharge assembly capable of generating a low temperature, atmospheric pressure plasma micro jet is disclosed. The microhollow assembly has at two electrodes: an anode and a cathode separated by a dielectric. A microhollow gas passage is disposed through the three layers, preferably in a taper such that the area at the anode is larger than the area at the cathode. When a potential is placed across the electrodes and a gas is directed through the gas passage into the anode and out the cathode, along the tapered direction, then a low temperature micro plasma jet can be created at atmospheric pressure. Selection of gas microhollow geometry and operational characteristics enable the application of the assembly to low temperature treatments, including the treatment of living tissue.

Abstract: A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma.

Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.

Abstract: A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.

Abstract: Provided are an impedance matching method and a matching system performing the same. The method includes: measuring an electrical characteristic of the power transmission line including the matching system and the load; extracting a control parameter for impedance matching from the electrical characteristic of the power transmission line; and controlling the matching system by using the control parameter. The extracting of the control parameter comprises utilizing an analytic coordinate system that quantitatively relates the electrical characteristic of the matching system to the electrical characteristic of the power transmission line.

Abstract: For determining a wave running time between a RF source in a plasma power supply device and a load connected to the plasma power supply device, an RF pulse is transmitted forwards from the RF source to the load. The pulses are reflected by the load and transmitted backwards to the power source. A return time measured on arrival of the pulse(s) at the inverter is used to determine a wave running time.

Abstract: A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.

Abstract: A plasma generator having a dielectric body; a first end wall and a second end wall attached or coupled to each end of the dielectric body to define a cavity within the dielectric body, and wherein the second end wall includes at least one discharge aperture formed therein; at least one gas inlet formed proximate the first end of the dielectric body; at least one anode located within the cavity of the dielectric body, wherein the at least one anode includes at least one anode aperture; at least one hollow discharge nozzle associated with each discharge aperture, and extending from the second end wall to a nozzle aperture, such that when a generated plasma is produced, the generated plasma flows through each discharge aperture, each associated discharge nozzles, and each associated nozzle aperture; and at least one cathode formed at least substantially around a portion of each discharge nozzle.

Abstract: An apparatus and method is disclosed which includes or employs an EUV light source comprising a laser device outputting a laser beam, a beam delivery system directing the laser beam to an irradiation site, and a material for interaction with the laser beam at the irradiation site to create an EUV light emitting plasma for use in processing substrates.

Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions ions are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.

Abstract: Synchronous pulse plasma etching equipment includes a first electrode and one or more second electrodes configured to generate plasma in a plasma etching chamber. A first radio frequency power output unit is configured to apply a first radio frequency power having a first frequency and a first duty ratio to the first electrode, and to output a control signal including information about a phase of the first radio frequency power. At least one second radio frequency power output unit is configured to apply a second radio frequency power having a second frequency and a second duty ratio to a corresponding second electrode among the second electrodes. The second radio frequency power output unit is configured to control the second radio frequency power to be synchronized with the first radio frequency power or to have a phase difference from the first radio frequency power in response to the control signal.

Abstract: A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

Abstract: An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm3 and about 200 W/cm3, while having an operating gas temperature of less than 50° C., for processing materials outside of the discharge, is described. The apparatus produces active chemical species, including gaseous metastables and radicals which may be used for polymerization (either free radical-induced or through dehydrogenation-based polymerization), surface cleaning and modification, etching, adhesion promotion, and sterilization, as examples. The invention may include either a cooled rf-driven electrode or a cooled ground electrode, or two cooled electrodes, wherein active components of the plasma may be directed out of the plasma and onto an external workpiece without simultaneously exposing a material to the electrical influence or ionic components of the plasma.

Abstract: Provided are an RF power distribution device and an RF power distribution method. The RF power distribution device includes an impedance matching network for transferring power from an RF power source and a power distribution unit for distributing the output power from the impedance matching network to at least one electrode generating capacitively-coupled plasma. The power distribution unit includes a first reactive element connected in series to a first electrode, a variable capacitor having one end connected in parallel to the first reactive element and the first electrode and the other end grounded, and a second reactive element having one end connected to a first node where the one end of the variable capacitor and one end of the first reactance device are in contact with each other and the other end connected to a second node where a second electrode and an output terminal of the impedance matching network are connected.

Abstract: To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 ?m and less than 1 ?m, and the cone angle ? of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

Abstract: A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion.

Abstract: A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.

Abstract: Method for obtaining high-energy repetitively pulsed plasma flows in gases at atmospheric and high pressure. The invention relates to the field of plasma physics and plasma technology and can be used in the design and creation of sources of high plasma flows for scientific and technological applications. A method of producing high-energy repetitively pulsed plasma flows in the atmospheric gases and high pressure gases, is to create a plasma current shell in the channel of the plasma accelerator and its electrodynamic acceleration. New in the author's opinion is that the area of low gas density is created in the acceleration channel with a high degree of ionization in the region of the plasma current shell formation.

Abstract: A substrate processing apparatus includes a high frequency power supply configured to generate a high frequency power; a plasma generation electrode configured to generate the plasma by the high frequency power supplied from the high frequency power supply; a single matching unit provided between the high frequency power supply and the plasma generation electrode, and configured to match an impedance of a transmission path and an impedance of a load; and an impedance adjusting circuit provided between the matching unit and the plasma generation electrode, and configured to adjust an impedance therebetween. The matching unit performs impedance matching by setting the plasma and the impedance adjusting circuit as a single load, and an output impedance of the matching unit is adjusted to a value higher than an impedance of the plasma by adjusting the impedance by the impedance adjusting circuit.

Abstract: The present invention discloses a surface feed-in electrode structure for thin film solar cell deposition, relating to solar cell technologies. The surface feed-in electrode structure uses a signal feed-in component with a flat waist and a semicircular feed-in end to connect the signal feed-in port by surface contact. The signal feed-in port is located in a hallowed circular area of a center of the backside of a cathode plate, and feeds in an RF/VHF power supply signal. An anode plate is grounded. The cathode plate is insulated with a shielding cover, and a through-hole is configured on the shielding cover. The effects include that, by using the surface feed-in at the center of the electrode plate, the feeding line loss of single-point or multi-point feed-in configurations can be overcome. Uniform large area and stable discharge driven by the RF/VHF power supply signal can be achieved, and the standing wave and the skin effect can be effectively removed.

Abstract: An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.

Abstract: Provided are a substrate processing device and an impedance matching method. The substrate processing device includes: a high frequency power source for generating high frequency power; a process chamber for performing a plasma process by using the high frequency power; a matching circuit for compensating for a changed impedance of the process chamber; and a transformer disposed between the process chamber and the matching circuit in order to reduce the impedance of the process chamber.

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

Abstract: A plasma generator 1 includes a first electrode 12 provided in a gas storage section 5, and a second electrode 13 provided in such a manner that at least a portion coupled with the first electrode 12 comes into contact with a liquid 17 in a liquid storage section 4. Electrical discharge is caused between the first electrode 12 and the second electrode 13 so that plasma is produced in a gas region in the liquid 17 in the liquid storage section 4, and hydroxyl radical is produced from water contained in the liquid 17 and oxygen contained in the gas.

Abstract: An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer electrode arranged outside the plastic container, thereby generating discharge plasma on the inner surface of the plastic container to form a barrier film on the inner surface of the plastic container, and that is provided with a gas supply pipe having a gas flow path to supply a medium gas and an insulating member screwed into an end portion of the gas supply pipe to be flush therewith and having a gas outlet communicated with the gas flow path.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode.