Abstract: A voltage doubler circuit supports operation in both a positive voltage boosting mode to positively boost voltage from a first node to a second node and a negative voltage boosting mode to negatively boost voltage from the second node to the first node. The voltage doubler circuit is formed by transistors of a same conductivity type that share a common bulk that is not tied to a source of any of the voltage doubler circuit transistors. A bias generator circuit is coupled to receive a first voltage from the first node and second voltage from the second node. The bias generator circuit operates to apply a lower one of the first and second voltages to the common bulk.

Abstract: A level shifter includes (a) an input unit including (i) a first input transistor configured to receive a first voltage and connected to a first connection node, and (ii) a second input transistor configured to receive the first voltage and connected to a second connection node, (b) an output unit including (i) a first output transistor connected to a first output terminal and configured to receive a second voltage, and (ii) a second output transistor connected to a second output terminal and configured to receive the second voltage, (c) a first bias unit configured to control voltage drop between the output terminals and the connection nodes based on a first bias signal, and (d) a second bias unit configured to control a first voltage drop between the first output transistor and the second output terminal and a second voltage drop between the second output transistor and the first output terminal based on a second bias signal.

Abstract: Embodiments for a level shifter are provided, including: a current mirror comprising a reference current transistor and a mirrored current transistor; a pull-down network comprising a first and a second pull-down transistor, wherein the first and second pull-down transistors are respectively connected in series with the reference and mirrored current transistors; a pull-up transistor connected to an intermediate node located between the mirrored current transistor and the second pull-down transistor; a transition control transistor connected to the gate electrode of the reference current transistor; a cut-off transistor connected between the first pull-down transistor and a common negative power supply voltage; and a first and a second inverter connected to the intermediate node, wherein a control node is located between the first and second inverters, and gate electrodes of the pull-up transistor, the transition control transistor, and the cut-off transistor are connected to the control node.

Abstract: A level shift circuit includes: a constant-current generation unit; a current mirror unit that flows the constant-current through first and second lines; and a level shift unit that receives first and second input signals, the first input signal being varied between first and second logic levels and having first and second potentials at the first and second logic levels respectively, the second input signal being a phase-inverted signal of the first input signal, the level shift unit producing first and second output signals that are acquired by shifting a signal level at the first logic level of the first and second input signals from the first potential to the power supply potential, the level shift unit outputting the first output signal from a node on the second line and outputting the second output signal from a node on the first line. The constant-current generation unit includes a current adjustment circuit which varies the constant current value depending on a variation in the first potential.

Abstract: A transmit-receive (T/R) switch is disclosed. An apparatus including a T/R switch includes a transceiver to transmit signals to an antenna and to receive signals from the antenna. The signals are conveyed to and from the transceiver by a T/R switch. The T/R switch includes a transmit path and a receive path. The receive path includes a three-port inductor having a first terminal coupled to an input/output (I/O) terminal of the T/R switch and a second terminal coupled to a first pass transistor, and a third terminal. A pull-down transistor is coupled between the third terminal and a ground node. When active, the pull-down transistor pulls the receive path down toward ground.

Abstract: A circuit for controlling a high-side power switch includes a level shifting circuit including a latching circuit. The level shifting circuit is configured to receive a control signal for selectively configuring the latching circuit to be in a set state, for providing a first output signal to the high-side power switch, and in a reset state, for providing a second output signal, different from the first output signal, to the high-side power switch.

Abstract: A switching circuitry is configured to provide, during an ON-State, a connection between a first port and second port and to electrically disconnect, during an OFF-State, the first port from the second port. The switching interface comprises a first and a second cascode transistor element having an applicable operational voltage and comprising a control terminal, wherein the first cascode transistor element is connected with the first port of the switching interface and wherein the second cascode transistor element is connected with the second port of the switching interface. The switching interface comprises a switching transistor element, having the applicable operational voltage and comprising a third control terminal, the switching transistor element being serially connected the first and second cascode transistor elements. A supply signal arrangement is connected to the control terminals and configured to provide control voltages to the control terminals.

Abstract: Various embodiments provide for a level shifter with sub-threshold voltage functionality, which permits the level shifter to operate even when a voltage supply to the level shifter falls below a normal operational voltage range of one or more devices (e.g., transistors) within the level shifter. A level shift of an embodiment may operate when a voltage supply falls below a normal operational range in order to save power, which can be useful with respect to battery-operated devices, such an Internet of Things (IoT) sensor.

Abstract: A configurable driver integrated circuit is disclosed having a plurality of input/output terminals for interfacing exterior of the integrated circuit. The integrated circuit includes a plurality of driver circuits, with each driver circuit including a transistor having a source and a drain, and each of the source and drain thereof connected to a dedicated and respective one of the input/output terminals and further includes a gate driver for driving a gate of the transistor, with supply inputs associated with a floating voltage domain, and each driver circuit also includes a level shift circuit for shifting the level of a logic signal from a fixed voltage domain to the floating voltage domain. A switching circuitry generates switching signals in a fixed voltage domain for controlling the operation of each of the driver circuits in accordance with a predetermined configuration defined by external circuit.

Abstract: A level shifter includes a level switching circuit, an input circuit, and a first voltage drop circuit. The level switching circuit is configured to adjust a first voltage level of a first node and a second voltage level of a second node in response to a first input signal and a second input signal. The input circuit is configured to receive the first input signal and the second input signal. The first voltage drop circuit is coupled between the level switching circuit and the input circuit, and is configured to track a voltage level of a third node which is coupled to the first node, in order to be turned on according to the voltage level of the third node.

Abstract: A level shifter that comprises an input operating in an input voltage domain and an output for outputting an output signal in an output voltage domain. The level shifter further includes an inverter circuit operating in the input voltage domain for inverting an input signal to create an inverted input signal. The level shifter also includes an intermediate circuit operating in an intermediate voltage domain for generating an intermediate signal. An output buffer circuit generates the output signal based at least in part on the inverted input signal and the intermediate signal.

Abstract: The invention addresses providing a semiconductor device that enables to reduce noise simultaneous with switching. A driver IC which is a semiconductor device includes a drive circuit which drives a control terminal of a PMOS drive stage which is a switching element, a noise detection circuit which detects noise in an output signal when switching (turning) the PMOS drive stage on or off, and a control circuit which control driving by the drive circuit based on the detected noise.

Abstract: In one general embodiment, a computer-implemented method includes identifying a data dump and a predefined data structure, parsing the predefined data structure to determine one or more identifiers within the predefined data structure, determining that a match exists between one or more elements of the data dump and the one or more determined identifiers of the predefined data structure, and formatting the data dump utilizing the predefined data structure, in response to the determining.

Abstract: A level shift circuit includes first and second NMOS transistors that are coupled between a first supply terminal, and first and second output nodes, respectively, and have respective control terminals receiving input signals of a low amplitude, third and fourth PMOS transistors which are coupled between a second supply terminal, and the first and second output nodes outputting signals of high amplitude, respectively, a fifth PMOS transistor which is coupled between a gate of the third PMOS transistor and the second output node, and has a gate coupled to the first output node, a sixth PMOS transistor which is coupled between a gate of the fourth PMOS transistor and the first output node, and has a gate coupled to the second output node, and first and second load elements which are coupled between the second supply terminal and the gates of the third and fourth PMOS transistors, respectively.

Abstract: A level shifter including first and second MOS transistors placed in parallel between a first power supply voltage terminal and a reference voltage terminal, each transistor having a gate connected to a drain of the other transistor, third and fourth MOS transistors placed between the first and second MOS transistors and the reference voltage terminal and having gates respectively supplied with first and second control signals, and fifth and sixth MOS transistors placed between the third and fourth MOS transistors and the reference voltage terminal and having gates respectively supplied with third and fourth control signals, wherein the first to fourth control signals are used to control a conductive/nonconductive state between the first MOS transistor and the reference voltage terminal and a conductive/nonconductive state between the second MOS transistor and the reference voltage terminal.

Abstract: Some embodiments include apparatus and methods having a first node to receive a supply voltage, a second node to receive a first bias voltage, a third node to receive ground potential, a first circuit branch coupled between the first and second nodes, and a second circuit branch coupled between the first and third nodes. The first bias voltage is provided to a gate of a first transistor among a plurality of transistors coupled in series. The first and second circuit branches are arranged to provide a second bias voltage to gate of a second transistor among the plurality of transistors. The value of the second bias voltage is based on a value of the first bias voltage.

Abstract: A level shifter includes an input control unit suitable for outputting an output control signal according to a pulse width of a data signal and a pulse width of an input control signal; and an output control unit suitable for controlling an output driving signal according to the output control signal.

Abstract: Embodiments relate to circuits, electronic design assistance (EDA) circuit layouts, systems, methods, and computer readable media to enable logic devices operating on a core supply voltage to drive memory devices operating on different supply voltages. In one embodiment, a programmable level translator device is implemented using an NMOS transistor pair and a PMOS cross quad. The switching characteristics are modified with the use of a charge pump connected to the gate terminals of two of the PMOS transistors within the PMOS cross quad. Transmission gates are also employed to engage and disengage the charge pump based on a control switch. In various embodiments, the level translator device works with a number of memory devices operating over a wide range of power supply voltages.

Abstract: An apparatus includes an integrated circuit (IC), which includes complementary metal oxide semiconductor (CMOS) circuitry that includes a pull-up network coupled to a supply voltage and at least one input signal. The IC further includes a first metal oxide semiconductor (MOS) transistor coupled to the pull-up network and to a first bias voltage to reduce a gate-induced drain leakage (GIDL) current of the CMOS circuitry.

Abstract: A compact and reliable changeable negative voltage transmission circuit is described. It is very useful for applications need passing changeable negative voltage to selected pins in certain mode. The changeable negative voltage is 0V when enable signal EN is low and ?V1 when enable signal EN is high. The circuit includes a control circuit and an output circuit. The control circuit includes a control high power source VDD and a control low power source VNEG. The control circuit generates control output signals CON and CON_B to the output circuit to output either 0V if IN is low or ?V1 if IN is high when EN is high. Only single type VT transistor is used in the transmission circuit without any reliability concern, no extra bias voltage is need, which reduces the area and keeps the manufacturing cost low.

Abstract: According to one embodiment, a level shift circuit includes a first transistor, a second transistor, third transistor, fourth transistor, fifth transistor, sixth transistor, seventh transistor and eighth transistor. The level shift circuit also includes a first capacitance element, a second capacitance element, third capacitance element and fourth capacitance element. The first through eighth transistors have a first conductivity type. The first through fourth transistors are included to a bi-stable multi-vibrator. The fifth through the eighth transistors are included to an active load for the differential input of the signal through the third capacitance element and the fourth capacitance element.

Abstract: An integrated circuit controls one or more external back-to-back (anti-series) transistor switches with three pins per switch. Two pins couple the switch terminals of the external switch to terminals of an internal anti-series switch. An intermediate source node of the internal switch provides a reference voltage that is representative of the external switch's intermediate source node. A predriver of the integrated circuit drives a gate signal relative to the reference voltage, enabling fast, non-dissipative switching of the external switch. A disclosed method includes coupling switch terminal signals from an external anti-series switch to terminals of an internal anti-series switch; and driving a gate signal to the external anti-series switch relative to a reference voltage of an intermediate node of the internal anti-series switch.

Abstract: A configurable driver integrated circuit is disclosed having a plurality of input/output terminals for interfacing exterior of the integrated circuit. The integrated circuit includes a plurality of driver circuits, with each driver circuit including a transistor having a source and a drain, and each of the source and drain thereof connected to a dedicated and respective one of the input/output terminals and further includes a gate driver for driving a gate of the transistor, with supply inputs associated with a floating voltage domain, and each driver circuit also includes a level shift circuit for shifting the level of a logic signal from a fixed voltage domain to the floating voltage domain. A switching circuitry generates switching signals in a fixed voltage domain for controlling the operation of each of the driver circuits in accordance with a predetermined configuration defined by external circuit.

Abstract: A system for high voltage level shifting includes a level shifting circuit having a high side circuit that receives a mixed signal having a common mode signal and a differential mode signal, and to attenuate the common mode signal in the mixed signal to generate an adjusted signal. The high side circuit generates a high output signal at a high output node in response to the adjusted signal. The system further includes a high side high voltage power transistor having a gate connected to the high output node of the high side circuit. The high side high voltage power transistor configured to provide a high portion of an output signal on a first output node in response to the high output signal.

Abstract: A low power voltage level shifter circuit in which current is limited through at least one of a plurality of CMOS logic circuits, one of which receives input signals within a first voltage level and is connected between a first upper and lower power supply, a second of which transmits shifted output signals within a second voltage level and is connected between a second upper and lower power supply. There is at least one current-limiting MOS transistor connected between at one of the CMOS logic circuits and one of its power supplies. Typically, there is at least one current-limiting MOS transistor between the second CMOS logic circuit which transmits the shifted output signals which have a larger range than that of the input signals. A second current through the at least one current-limiting MOS transistor mirrors a set current through a first MOS transistor so that power consumed by the CMOS logic circuit during switching is limited.

Abstract: The output circuit includes: a control voltage generating circuit configured to generate a control voltage; a first MOS transistor having a gate for receiving the control voltage; a second MOS transistor having a gate to which a first input signal is input; a third MOS transistor having a gate to which a second input signal is input; and a fourth MOS transistor which has a gate connected to a source of the first MOS transistor, and a drain connected to an output terminal, and is configured to be driven with the first input signal and the second input signal to output an output signal to the output terminal. The control voltage generating circuit is configured to absorb fluctuations in control voltage, which are caused due to changes in first input signal and second input signal, to thereby maintain the control voltage at a predetermined voltage.

Abstract: An electronic device is provided for improving the determining speed of the comparator and reducing power consumption. The comparator includes a differential input circuit configured to operate with a first power supply voltage and output a signal when an input signal is higher than a reference signal in voltage; a positive feedback circuit configured to operate with a second power supply voltage lower than the first power supply voltage and to accelerate transition speed when a compared result signal indicating a compared result between the input signal and the reference signal in voltage, is inverted, based on the output signal of the differential input circuit; and a voltage conversion circuit configured to convert the output signal of the differential input circuit into a signal corresponding to the second power supply voltage.

Abstract: Techniques and devices for level-shifting a signal are described. A level-shifting circuit may include an input terminal and components. The input terminal may be configured to receive a logical signal compatible with a first power domain. The components may be configured to convert the logical signal to a second power domain and to provide the converted logical signal at an output terminal. The components may include a resistive device coupled between the output terminal and the input terminal, and/or a capacitive device coupled between the resistive device and the input terminal.

Abstract: A buffer circuit includes a transistor cascode circuit, a latch circuit, a first transistor, a second transistor, and a voltage generator. The transistor cascode circuit is biasing at a first voltage. The latch circuit is biasing at a second voltage, whose voltage level is negative. The first transistor and the second transistor are coupling between the transistor cascode circuit and the latch circuit, and a gate of the first transistor is coupled to a gate of the second transistor. The voltage generator provides a biasing voltage to the gate of the first transistor and adjusts a voltage level of the biasing voltage dynamically according to a voltage level of the second voltage. The biasing voltage is at a first level when the buffer circuit is initially turned on, and the biasing voltage is at a second level when the buffer circuit enters the steady state.

Abstract: The disclosure provides an amplifier. The amplifier includes a first transistor that receives a first input. A second transistor receives a second input. A plurality of impedance networks is coupled between the first transistor and the second transistor. At least one impedance network of the plurality of impedance networks includes a first impedance path and a second impedance path. The first impedance path is activated during single ended operation, and the second impedance path is activated during differential operation.

Abstract: A driver circuit comprising: output circuitry for connecting the circuit to a load, the output circuitry comprising one or more energy-storing components; switching circuitry arranged to supply power from a power supply to the load by supplying a current through at least one of the energy-storing components that resists a change in current, or applying a voltage across at least one of the energy-storing components that resists a change in voltage; and control circuitry arranged to control the switching circuitry, to cause the above-mentioned current or voltage to oscillate between an upper envelope and a lower envelope. The control circuitry is configured to modulate data into this current or voltage by shifting the upper envelope between at least a first amplitude level and a second amplitude level, and by shifting the lower envelope by the same amount in the same direction at the same time.

Abstract: To provide a soft start circuit capable of obtaining a high-accuracy soft start time. The soft start circuit is equipped with a constant current source, an output terminal which outputs a soft start voltage, a ground terminal, a first transistor which is connected between the constant current source and the ground terminal and has a gate and a drain both short-circuited, a second transistor which is connected between the constant current source and the output terminal and receives a clock signal at a gate thereof, and a capacitor connected between the second transistor and the ground terminal.

Abstract: A driving circuit includes a first switching element operating in a turned-on state or a turned-off state depending on a control voltage; a second switching element operating complementarily to the first switching element depending on the control voltage; a constant voltage circuit unit turning on depending on a source-gate voltage of the first switching element to maintain a constant voltage; a current adjusting circuit operating in a turned-on state or a turned-off state depending on the control voltage, and adjusting an operating current flowing to a ground depending on a current control signal in the turned-on state of the current adjusting circuit; a current control circuit controlling the operating current by providing the current control signal to the current adjusting circuit in a turned-on state of the constant voltage circuit unit; and a signal transfer circuit providing the control voltage to a gate of the second switching element.

Abstract: An electronic device includes a battery module, a first switch circuit, a connector, a voltage stabilizer and a controller circuit. The controller circuit is coupled to the connector and the first switch circuit. A configuration channel is implemented between the controller circuit and the connector. When a voltage of the battery module is lower than a threshold voltage and is only connected to a first power source, the first power source provides an activating voltage to the controller circuit through the voltage stabilizer, so as to enable the controller circuit. The connector sends a first detection signal to the controller circuit through the configuration channel. The controller circuit sends a first control signal to turn on the first switch circuit according to the first detection signal, so that the first power source charges the battery module through the first switch circuit.

Abstract: A circuit is disclosed. The circuit includes eight MOD transistors and a capacitor, the first MOS transistor having a source coupled to a first predetermined supply voltage (VDDM), a second MOS transistor having a source coupled to a first predetermined supply voltage VDDM, a third MOS transistor having a source coupled to a drain of the first MOS transistor, a fourth MOS transistor having a source coupled to a drain of the second MOS transistor, a fifth MOS transistor having a source coupled to a drain of the third MOS transistor and a gate of the second MOS transistor, and a gate coupled to a gate of the third MOS transistor and an input node, and a drain coupled to ground, a sixth MOS transistor having a source coupled to a drain of the fourth MOS transistor and a gate of the first MOS transistor and an output node.

Abstract: An output stage circuit comprises: a power inverter, coupled to a signal terminal; and a dynamic bias circuit, wherein the dynamic bias circuit connects between a system voltage terminal and the power inverter. The dynamic bias circuit comprises at least one Zener diode, which is configured to maintain a voltage difference between a gate terminal and a source terminal of at least one transistor of the power inverter within a first absolute value; which is configured to maintain a voltage difference between the gate terminal and a drain terminal of the at least one transistor within a second absolute value; and configured to maintain a voltage difference between the drain terminal and the source terminal of the at least one transistor within the second absolute value.

Abstract: A power circuit is disclosed. The power circuit includes a power capacitor and a power resistor connected to the power capacitor. The power circuit also includes a power integrated circuit, including a GaN-based substrate, a power FET on the substrate, and a driver on the substrate. The driver is configured to charge a gate of the power FET using current from a power node. The power integrated circuit also includes a first power voltage regulator on the substrate, where the driver is configured to receive current from the capacitor through the resistor while the driver charges the gate of the power FET, and where the first power voltage regulator is configured to provide current to the capacitor while the driver does not charge the gate of the power FET.

Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

Abstract: A level shifter includes a first and a second transistor coupled to a first power supply voltage terminal supplied with a second power supply voltage in parallel, the first transistor having a first gate connected to a drain of the second transistor and a first gate insulating film, and the second transistor having a second gate connected to a drain of the first transistor and a second gate insulating film, a third and a fourth transistor coupled to a reference voltage terminal in parallel, the third transistor having a third gate supplied with a first control signal and a third gate insulating film, and the fourth transistor having a fourth gate supplied with a second control signal and a fourth gate insulating film, a first and a second depression transistor, and a timing control unit placed between a second power supply voltage terminal and the reference voltage terminal.

Abstract: A semiconductor device includes a first transistor and a clamping circuit. The first transistor is arranged to generate an output signal according to a control signal. The clamping circuit is arranged to generate the control signal according to an input signal, and to clamp the control signal to a predetermined signal level when the input signal exceeds the predetermined signal level.

Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

Abstract: There is described a driver circuit (100) for providing biasing voltages to a flash memory device, the driver circuit comprising (a) a level shifter latch (110) comprising a first latch input terminal (111), a first latch control terminal (112), a latch voltage supply terminal (113), a first latch output terminal (114), and a second latch output terminal (115), wherein the level shifter latch (110) is adapted to provide, in dependency of a voltage at the first latch input terminal (111), one of a first voltage and a second voltage at the first latch output terminal (114) and the other one of the first voltage and the second voltage at the second latch output terminal (115), wherein the first voltage is dependent on a voltage applied to the latch voltage supply terminal (113) and the second voltage is dependent on a voltage applied to the first latch control terminal (112), (b) a first output stage (120) comprising a first switching element (N11, N12), a second switching element (N13), a first voltage supply t

Abstract: In one embodiment, a voltage level shifter includes a first NOR gate having a first input configured to receive a first input signal in a first power domain, a second input configured to receive an enable signal in a second power domain, a third input, and an output. The voltage level shifter also includes a second NOR gate having a first input configured to receive a second input signal in the first power domain, a second input configured to receive the enable signal in the second power domain, a third input coupled to the output of the first NOR gate, and an output coupled to the third input of the first NOR gate. The first and second NOR gates are powered by a supply voltage of the second power domain.

Abstract: In exemplary embodiments of the present disclosure, a level shifting circuit and an integrated circuit using the level shifting circuit are provided. Compared to the conventional level shifting circuit, the level shifting circuit herein further has another pair of PMOS transistors and another pair of NMOS transistors, wherein the other pair of the PMOS transistors is connected to the pair of the PMOS transistors, and the other pair of the NMOS transistors is connected to the pair of the NMOS transistors. PMOS and NMOS transistors of the level shifting circuit are protected, the lifetime of the level shifting circuit is increased, and the damage probability of the level shifting circuit is decreased. The other pair of the PMOS transistors being turned on can be operated in the saturation region rather than in the linear region, such that the operation speed of the level shifting circuit is enhanced.

Abstract: An apparatus for performing level shift control in an electronic device includes an input stage positioned in a level shifter of the electronic device, and an output stage positioned in the level shifter and coupled to the input stage through a set of intermediate nodes. The input stage is arranged for receiving at least one input signal of the level shifter through at least one input terminal of the input stage and controlling voltage levels of the set of intermediate nodes according to the at least one input signal. The input stage includes a hybrid current control circuit coupled to the at least one input terminal and arranged for performing current control for the input stage. The hybrid current control circuit is equipped with multiple sets of parallel paths for controlling currents passing through the set of intermediate nodes, respectively, each set may include two or more paths in parallel.

Abstract: A level shifting circuit includes a transistor output unit that receives a first power supply signal and convert the first power supply signal to a second power supply signal having a different level from the first power supply signal and a current provision unit that provides a current to an output terminal of the transistor output unit when the first power supply signal of the transistor output unit is inputted to shorten a prolonged portion of the second power supply signal. Therefore, the level shifting circuit may provide an additional current to the output terminal of the transistor output unit to shorten a prolonged portion of the output voltage.

Abstract: A level shifter includes a latch circuit having a first FET and a second FET; an input circuit having a third FET and a fourth FET, the gates of the first and second FETs being coupled to the drains of the fourth and third FETs, respectively; a first resistive device (resistor, diode-connected FET) coupled between and in series with the first and third FETs between a first voltage rail and a second voltage rail; and a second resistive device (resistor, diode-connected FET) coupled between and in series with the second and fourth FETs between the first and second voltage rails. The gates of the third and fourth FETs are configured to receive a first set of complementary voltages, and a second set of complementary voltages are configured to be generated at the gates of the first and second FETs, respectively. The second set of complementary voltages are based on the first set of complementary voltages.

Abstract: In one embodiment, a circuit includes a resistance including first and second terminals. The first terminal of the resistance is coupled to ground. The circuit also includes a first switching element including first, second, and third terminals. The first terminal of the first switching element is coupled to an output of an integrated circuit and the second terminal of the first switching element is coupled to a voltage supply of the integrated circuit. Additionally, the circuit includes a second switching element including first, second, and third terminals. The first terminal of the second switching element is coupled to an enable input of the integrated circuit. Furthermore, the second terminal of the second switching element is coupled to the third terminal of the first switching element and to the second terminal of the resistance. Moreover, the third terminal of the second switching element is coupled to the ground.

Abstract: A transmitter is provided with a plurality of pull-up legs and a plurality of pull-down legs. A controller controls the pull-up legs and the pull-down legs so that a constant output impedance is provided while supporting a range of logic-high output voltages.

Abstract: A semiconductor device includes a first semiconductor chip operating at a first power supply voltage and a second semiconductor chip operating at a second power supply voltage lower than the first power supply voltage to supply the second power supply voltage to the first semiconductor chip. The semiconductor chips according to the present invention are conveniently used for fabrication of the semiconductor device. The first semiconductor chip includes an output circuit including a first transistor and a second transistor, interconnected in series and turned on or off complementarily. The output circuit outputs a signal to a first external output terminal. The first semiconductor chip also includes a third transistor connected in series with the first and second transistors and having a gate electrode connected to a second output terminal.