Abstract: A level converter comprises first and second latches, and first through fourth transistors. The first latch has first and second power supply terminals, and first and second nodes. The second latch has third and fourth power supply terminals, and third and fourth nodes. The first transistor has a first current electrode coupled to the first node, a control electrode coupled to receive a first bias voltage, and a second current electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode coupled to the third node, and a control electrode coupled to receive a second bias voltage. The third transistor has a first current electrode coupled to the second node, a control electrode coupled to receive the first bias voltage, and a second current electrode.

Abstract: The low power consumption CMOS high voltage driving circuit relates to a kind of high voltage driving circuit for output driving, and there is an out buffer stage between the output end of the level switch stage and the input end of the high voltage output stage, comprising a high voltage PMOS pipe and a high voltage NMOS pipe. The source of the high voltage PMOS pipe is connected with the power supply, its gate electrode is connected with the output end of the upper level out buffer unit as the input end of the current level out buffer unit. The source of the high voltage NMOS pipe is put to earth, and its gate electrode serves as the receiving end of the 3ith sequence signal. The drain region of the high voltage PMOS pipe is connected with that of the high voltage NMOS pipe and is connected with the input end of the lower level out buffer unit as the output end of the current level out buffer unit.

Abstract: A level shifter circuit for shifting from a first voltage level technology (such as 0.9 volt) to a second level voltage technology (such as 3.3 volt) with increased switching speed. The increased speed is achieved by adding a boost circuit to the pull-up transistors to boost the switching speed and shut itself down after the transition. The level shifter circuit does not require intermediate level transistors or intermediate level voltage sources.

Abstract: A level shifter and method thereof. The level shifter may include a protective circuit configured to receive an input signal having an input voltage level, the input signal received on an input line, the protective circuit reducing the input voltage level to generate a stabilized input signal and a first inverter configured to invert the stabilized input signal and to output an inverted output signal at an inverted output voltage level to a first node. In an example method, an input signal may be received at an input voltage level, the input voltage level may be reduced to output a stabilized input signal, the stabilized input signal may be inverted to output an inverted output signal at an inverted output voltage level to a first node and the first node may be transitioned to a node voltage level based on the input signal. The level shifter and method thereof may reduce a power consumption and/or a chip size of a semiconductor device.

Abstract: A level shifter is presented that allows fast switching while requiring low power. In accordance with some embodiments of the invention, the level shifter is a two stage level shifting circuit with p-channel and n-channel transistors biased so as to limit the potential between the source to gate or drain to gate of any of the transistors. Pull-up transistors are placed in a transition state so that spikes resulting from an increasing or decreasing input voltage turn on or off the pull up transistors to assist in the switching.

Abstract: At least one of the disclosed systems includes driver logic that is capable of driving a device and pre-driver logic coupled to the driver logic and that drives the driver logic. If the pre-driver logic receives an input signal of a first type, the pre-driver logic activates a first transistor such that the pre-driver logic provides an output signal. If the pre-driver logic receives an input signal of a second type, the pre-driver logic activates a second transistor and a third transistor that together cause the pre-driver logic to provide a different output signal. If the third transistor is not activated, the pre-driver logic provides the output signal.

Abstract: A semiconductor integrated circuit device may include a first internal circuit operating at a first voltage higher than a power supply voltage of the device, and a second internal circuit operating at a second voltage lower than the first voltage. An interface circuit may be provided to restrict a voltage transferred from the first internal circuit to the second internal circuit. The first internal circuit may include a metal oxide semiconductor (MOS) transistor having a relatively thick gate insulation layer, and the second internal circuit may have a MOS transistor having a relatively thin gate insulation layer. The interface circuit, by restricting voltage, may reduce an electric field applied to the gate insulation layer of the second MOS transistor in an effort to prevent a reduction in turn-on speed of the second MOS transistor.

Abstract: A system having voltage level shifting capabilities, the system includes a logic circuit and a multiple level voltage supply circuit; wherein the logic circuit comprises at least one PMOS transistor and at least one NMOS transistor; wherein the logic circuit receives an input signal, receives a voltage supply signal from the multiple level voltage supply circuit, and outputs an output signal via a first node; wherein the input signal has a low voltage swing between a low level supply voltage and a rail voltage; wherein the output signal has a high voltage swing between a high level supply voltage and the rail voltage; and wherein the multiple level voltage supply circuit selects, in response to a level of the output signal, whether to provide to the supply node of the logic circuit a high level supply voltage or a low level supply voltage.

Abstract: Leakage current reduction from a logic block is implemented via power gating transistors that exhibit increased gate oxide thickness as compared to the thin-oxide devices of the power gated logic block. Increased gate oxide further allows increased gate to source voltage differences to exist on the power gating devices, which enhances performance and reduces gate leakage even further. Placement of the power gating transistors in proximity to other increased gate oxide devices minimizes area penalties caused by physical design constraints of the semiconductor die.

Abstract: A display device has a driver including a level converter formed of polysilicon MISTFTs. The level converter includes first, second and third N-channel MISTFTs (NMISTFTS) and first, second and third P-channel MISTFTs (PMISTFTS). Gate and first terminals of the first NMISTFT and PMISTFT, and a gate terminal of the third PMISTFT are coupled to an input terminal via a capacitance. Second terminals of the second NMISTFT and PMISTFT, and a gate terminal of third NMISTFT are coupled to the input terminal via a capacitance. A first terminal of the third PMISTFT, and second terminals of the first NMISTFT and PMISTFT are coupled to a high voltage. A second terminal of the third NMISTFT, gate and first terminals of the second NMISTFT and PMISTFT are coupled to a low voltage. A second terminal of the third PMISTFT and a first terminal of the third NMISTFT are connected to an output terminal.

Abstract: An input/output device includes: a level shifter configured to convert an input signal of a first voltage into an output signal of a second voltage; and an output driver configured to operate in response to the output signal. The level shifter is configured to generate the output signal with a predetermined level when the first voltage is interrupted to supply.

Abstract: A liquid crystal display (“LCD”) includes a first voltage shift circuit at a front stage of an inverter circuit. The first voltage shift circuit includes a second transistor having a source serving as an input, and a gate and drain connected to each other, and is operated as a diode, and a first transistor having a source connected to a power supply, a gate connected to a ground, and a drain connected to the drain of the second transistor. An input signal shifts voltage by a threshold of the second transistor, and then is input into the inverter circuit. Further, a first condenser is inserted between an input node and the gate of the second transistor. Therefore, the LCD has a level shift circuit with a small circuit area and a rapid response speed.

Abstract: An input/output circuit, operable in an input mode and an output mode, for receiving data and an enable signal, the input/output circuit including an input/output terminal; a pull-up output transistor including a gate; a first logic circuit including an output node coupled to the gate of the pull-up output transistor; a pull-down output transistor including a gate; a second logic circuit coupled to the gate of the pull-down output transistor, and the second logic circuit inactivating the pull-down output transistor in the input mode; and a gate signal generation unit configured to generate a gate signal for inactivating the pull-up output transistor in accordance with the enable signal and an input signal provided from an external device to the input/output terminal in the input mode.

Abstract: A level shifter circuit for converting a logic signal with logic ‘1’ and ‘0’ levels at first high and low supply voltage levels to a signal with second high and low supply voltage levels. In particular, the second high and low supply voltage levels are greater than the first high and low supply voltage levels. The disclosed level shifter is configured such that the size of the preceding logic gate and circuitry within the level shifter can be reduced, facilitating its layout in pitch-limited areas. The level shifter also includes circuitry to decouple the output pull-up and pull-down paths to further facilitate state transitions and reduce crowbar current consumption.

Abstract: A level shifter increase a voltage level of an output signal with relatively lower power consumption by adopting current-starved configuration. The level shifter includes an input unit and a driving unit. The input unit includes a current-starved inverter configured to generate a control signal in response to an input signal and a bias voltage. The input unit is powered by a first power supply voltage. The driving unit generates an output signal in response to the control signal. The output signal has a voltage level higher than the input signal, and the driving unit is powered by a second power supply voltage higher than the first power supply voltage.

Abstract: A cross-level digital signal transmission device between two systems for cross-level digital signal transmission. Bi-directional symmetrical transmission is achieved without using additional control signals, and use of the transmission signal itself eliminates the positive feedback loop. Thus, neither additional control signals nor resulting unsymmetrical circuits need be provided.

Abstract: A mixed-voltage input/output buffer having low-voltage design comprises a pre-driver, a tracking unit, a driving unit, and input/output pad, a floating-well unit and a transporting unit. The pre-driver receives first data signal and enable signal and outputs first and second data voltages. The tracking unit provides Gate-Tracking function. The driving unit couples the pre-driver and the tracking unit for production of a first buffer voltage corresponding to the first data voltage. The input/output pad couples the driving unit to output a first buffer voltage and to receive a second data signal. The output unit is used for outputting a second buffer voltage corresponding to the second data signal. The floating-well unit couples to the driving unit and the input/output pad in order to output first buffer voltage and receive second data signal. The floating-well unit is used for preventing leakage current.

Abstract: The present invention discloses a source driver and a level shifting apparatus thereof. The level shifting apparatus is used for shifting a level of a data signal. The level shifting apparatus comprises a first charge pump and a level shifter. The first charge pump supplies a first pumped voltage based on the data signal. The level shifter generates a level-shifted data signal based on the first pumped voltage.

Abstract: The disclosure relates to a voltage converter, converting a first signal of a first voltage to output a second signal of a second voltage. A level shifter receives the first signal to generate the second signal. An isolation circuit is coupled to the output of the level shifter, passing the second signal out. When the input of voltage converter is floated, the isolation circuit stops passing the second signal as the output, instead, the isolation circuit outputs a substitution signal having a predetermined voltage level irrelevant to the input of the level shifter.

Abstract: A multi-threshold CMOS system and method controls a state of respective blocks individually. Each block includes a logic circuit having a logic transistor and a control transistor connected between the logic circuit and a power line connected to one of a ground and a power source. The control transistor has a higher threshold than the logic transistor. The blocks are controlled by generating an individual block ON/OFF signal for each block, generating an individual control signal in response to the individual block ON/OFF signal, supplying the individual control signal to the control transistor and controlling voltage supply to the logic circuit within each block in accordance with the individual control signal.

Abstract: In level-shifting circuitry for shifting low-voltage-domain signals to a high-voltage domain, one of two output transistors is driven with one of the low-voltage-domain signals, thereby reducing loading on the output and increasing output speed and bandwidth. The circuitry can be mirrored for differential operation. When included in a serial interface of a programmable logic device, the circuitry can be programmably selectable between single-ended and differential operation.

Abstract: Systems and methods are disclosed for operating a core circuitry of an integrated circuit at a lower voltage than the coupled IO circuitry using a tolerant circuit. In one embodiment includes a voltage tolerant circuit comprising a voltage detect module adapted to detect when a voltage is sufficient to switch bias conditions without violating maximum transistor operating conditions and a comparator adapted to detect when a PAD voltage is greater than an IO power supply voltage.

Abstract: A system and method for providing a low standby power interface for a low voltage I2C compatible bus is disclosed. A level shifter circuit is provided that comprises a first input connected to the I2C compatible bus, a second input connected to a busy signal line from an I2C slave module, and an output connected to the I2C slave module. The level shifter circuit increases its bias current in response to a busy signal from the I2C slave module that indicates that the I2C slave module is active. The level shifter circuit changes from its low power mode to a high power mode sufficiently quickly to receive high speed data from a serial data line of the IC2 compatible bus. After the data transfer has been completed, the level shifter circuit returns to a low power mode.

Abstract: A semiconductor device which includes a frequency-variable oscillation circuit including plural inverters, each of which features a PMOS transistor and a NMOS transistor, a first substrate bias generator including a first phase/frequency compare circuit that compares an output signal from the frequency-variable oscillation circuit with a reference clock signal and generating a first substrate bias voltage in response thereto, the first substrate bias voltage being supplied to substrates of the PMOS transistors in the oscillation circuit, and a second substrate bias generator including a second phase/frequency compare circuit that compares the output signal from the frequency-variable oscillation circuit with the reference clock and generating a second substrate bias voltage in response thereto, the second substrate bias voltage being supplied to substrates of the NMOS transistors in the oscillation circuit.

Abstract: A logic circuit includes a logic unit, a driving unit, and a voltage level adjuster. The logic unit includes an output node having a logic state, the logic unit being coupled to a first voltage reference. The driving unit includes an input node, the driving unit being coupled to a second voltage reference, the driving unit and the first logic unit being constructed from a single type of transistor. The voltage level adjuster provides a control signal that causes the driving unit to reduce a current flowing through the driving unit when the output node of the first logic unit has a first logic state, and causes the driving unit to drive an output node of the logic circuit to a voltage level substantially equal to that of the second voltage reference when the output node of the first logic unit has a second logic state.

Abstract: A new method to sample a digital input signal is achieved. The method comprises sampling a digital input processed through a first digital buffer. The sampling is at the rising edge of a system clock. The switching threshold of a second digital buffer is updated. The digital input processed through the second digital buffer is sampled. The sampling is at the falling edge of the system clock. The switching threshold of the first digital buffer is updated. A digital sampling circuit is achieved.

Abstract: A level shifter circuit has first to fourth transistors and a resistive element. The first transistor is activated in response to a logic signal whose high level voltage is a first voltage. The second transistor is activated in response to the inverse logic signal. Each of the first and second transistors is connected between a power supply line for supplying a second voltage and a ground line. The third transistor is connected to a drain of the first transistor through a first node. The fourth transistor is connected to a drain of the second transistor through a second node. A gate of the third transistor is connected to the drain of the second transistor through the second node. A gate of the fourth transistor is connected to the drain of the first transistor through the first node. The resistive element is connected between the first node and the second node.

Abstract: An integrated circuit is provided with body bias generation circuitry. The body bias generation circuitry generates a body bias signal that is provided to transistors on a body bias path. The body bias generation circuitry contains an active latch-up prevention circuit that clamps the body bias path at a safe voltage when potential latch-up conditions are detected. The level of body bias signal that is generated by the body bias circuitry is adjustable. The body bias generation circuitry regulates the body bias voltage on the body bias path using a p-channel control transistor. An isolation transistor is coupled between the p-channel control transistor and the body bias path. During potential latch-up conditions, the isolation transistor is turned off to isolate the body bias path from ground. Control circuitry adjusts a body bias voltage that is applied to body terminals in the p-channel control transistor and isolation transistor.

Abstract: An electronic device with a CMOS circuit (CC) comprises a first driver circuit (10) having a first and second PMOS transistor (P1, P2) and a first and second NMOS transistor (N1, N2). The electronic device furthermore comprise a second driver circuit (20) with a third and fourth PMOS transistor (P3, P4) and a third and fourth NMOS transistor (N3, N4). The second driver circuit (20) is complementary to the first driver circuit (10) and switches in the opposite direction to the first driver circuit (10). A gate of the second and fourth PMOS transistor (P2, P4) is coupled to a first bias voltage (REPp) and a gate of the second and fourth NMOS transistor (N2, N4) is coupled to a second bias voltage (REFn). A first capacitance (C3) is coupled between the gate and the drain of the fourth PMOS transistor (P4) and a second capacitance (C4) is coupled between the gate and the drain source of the fourth NMOS transistor (N4).

Abstract: The present invention discloses a multi-function circuit module having voltage level shifting function and data latching function via switching a plurality of switch elements. The multi-function circuit module includes a first circuit module, a fourth switch element, and a fifth switch module, wherein the first circuit module further includes a first switch module, a second switch module, and a third switch module. The multi-function circuit module can substantially reduce the circuit layout area. For example, when the multi-function circuit module of the present invention is applied in a source driving chip circuit, the multi-function circuit module can replace the original low-to-high voltage level shifting circuit and data latching circuit, so as to attain the purpose of reducing the chip area.

Abstract: A level conversion circuit includes a controlling section supplied with a first power supply voltage and a second power supply voltage different from each other, the controlling section outputting a bias voltage, detecting rising of the first power supply voltage and the second power supply voltage, and outputting a control signal corresponding to a period from the rising of a power supply voltage to stabilization of the power supply voltage, and a level converting section supplied with the control signal and the bias voltage, operation of the level converting section being set in one of a shutdown state and a normal operation state according to the control signal, and the level converting section converting level of an input signal and outputting a signal different in level from the input signal when the operation of the level converting section is set in the normal operation state.

Abstract: Circuits, methods, and apparatus for output devices having parasitic transistors for a higher output current drive. One such MOS output device includes a parasitic bipolar transistor that assists output voltage transitions. The parasitic transistor may be inherent in the structure of the MOS device. Alternately, one or more regions, such as implanted or diffused regions, may be added to the MOS device to form or enhance the parasitic bipolar device. The parasitic transistor is turned on when during an appropriate output transition and turned off once the transition is complete. The parasitic device may be turned on by injecting current into the bulk of a pull-down device, by pulling current out of the bulk of a pull-up device, or by tying the bulk of the output device to an appropriate voltage, such as VCC for a pull-down device or ground for a pull-up device.

Abstract: A voltage converter and a method of converting a voltage which maintain a first driver of a driver pair in an active state, where current flows, for only a predetermined time period. The driver pair may include a pull-up driver and a pull-down driver. One driver may be active when an input signal has a first transition, but not a second transition. The other driver may be active when the input signal has the second transition, but not the first transition. Alternatively, one driver may be inactive when the input signal has the second transition and active for a first portion of the first transition and inactive for a second portion of the first transition. Alternatively, only one driver may be active at any given time.

Abstract: A level converter includes a first to fourth transistors formed of a semiconductor having a same conductivity type. The first transistor is connected between a first power supply and a second output terminal, the second transistor is connected between a second power supply and a first output terminal, the third transistor is connected between the first power supply and the first output terminal, the fourth transistor is connected between the second power supply and the second output terminal, the first and the second transistors are input with one of first differential signals and the third and the fourth transistors are input with another of the first differential signals.

Abstract: Level shifter translator of the type comprising at least one first transistor and one second MOS transistor belonging to respective circuit branches connected with a first common conduction terminal and connected towards a first potential reference and receiving, on the respective conduction terminals, input differential voltages, the first and the second transistor have respective circuit branches referring to a biasing circuit with current mirror, a third transistor allows to couple the second transistor to said biasing circuit, an inverter connected to an output of said the circuit with the output driving the third transistor.

Abstract: A mixed-voltage buffer circuit coupled between a first circuit operative at a first power supply voltage and a second circuit operative at a second power supply voltage. The buffer circuit is connectable to the second power supply voltage and a third power supply voltage and includes an input circuit coupled to the first circuit through a first node and to the second circuit through a second node. The input circuit includes a first part coupled to the first node and an inverter coupled to the second node. The first part provides a signal having a voltage level approximately equal to the third power supply voltage to the inverter in response to a first signal on the first node, and provides a signal having a voltage level approximately equal to the second power supply voltage to the inverter in response to a second signal on the first node.

Abstract: A system comprising, a sense portion comprising a NAND logic gate that receives a first input logic signal associated with a lower voltage, wherein the sense portion outputs a sense logic signal, an intermediary portion comprising, a node operative to output an intermediary signal, a first pull down device, wherein the first pull down device receives a second input logic signal associated with the lower voltage complimentary with respect to the first input logic signal, a first pull up device that receives the sense logic signal, wherein the first pull up device is connected to a power supply at the higher operating voltage, and a second pull up device that receives the output logic signal associated with a higher voltage, an inverter portion, outputting the first output logic signal associated with the higher voltage responsive to a state of the intermediary signal.

Abstract: A level shift circuit basically has a configuration connecting two CMOS inverter circuits in parallel, furnishes an input signal to a control terminal of the inverter circuit, obtains an output signal from an output terminal of the inverter circuit, and has a function for level shifting the voltage amplitude of the input signal to the voltage amplitude of the supply voltage of the inverter circuit. The signal that is input by the gate terminal of an n-channel transistor arranged in each of two current paths forming the level shift circuit is not a direct input signal but a signal that is supplied by adding an offset corresponding to the threshold of each n-channel transistor with respect to the voltage amplitude of the input signal via the input voltage converter circuit.

Abstract: A design for a high speed differential voltage level shifter circuit arrangement utilizes both PFETs and NFETs controlled by inputs to determine the state of the outputs, which minimizes or eliminates contention on internal nodes when switching from one state to another. As a result, the design minimizes the adverse affects of mismatched NFET and PFET device strengths, and facilitates usage at high frequencies and for level shifting to a range of output voltage levels. The design is also adaptable for use in level shifting to higher or lower output voltages.

Abstract: Disclosed is a voltage level shifter, including a pull-up circuit, a voltage drop circuit and a pull-down circuit. Through the voltage level shifter, an input voltage is transformed into an output voltage having a different level as compared to that of the input voltage. With the voltage drop circuit, voltages received by the pull-down circuit are reduced and thus transistors of thinner gates may be used, effectively improving switching speed of transistors in the pull-down circuit. As such, noise and jiggle of the output voltage are reduced.

Abstract: A level shifter circuit that properly operates even when the power supply voltage is unstable. A level shifter circuit includes a first level shifter unit, a second level shifter unit, and a latch unit. In the first level shifter unit, a transistor is connected to a power supply line to generate drive voltage that is lower than a first power supply voltage. The first level shifter unit outputs complementary signals from the drive voltage. The output of the first level shifter unit is provided to the second level shifter unit. The second level shifter unit converts a complementary signal to a signal having a second power supply voltage. Based on this signal, a signal of the latch unit is switched.

Abstract: A level shifter circuit for shifting a voltage level of a logic signal from a first voltage to a second voltage, and a design structure on which the subject circuit reside are provided. An input stage operating in a domain of a first voltage supply includes a first inverter receiving an input signal and providing a first inverted signal. An output voltage level shifting stage operating in a domain of a second voltage supply is coupled to the input stage and providing an output signal having a voltage level corresponding to the second voltage supply domain and a logic value corresponding to the input signal. The level shifter circuit enables voltage level shifting a logic signal from a high to a low operating voltage, or from a low to a high operating voltage. The level shifter circuit enables high frequency operation, providing both fast switching and low capacitance.

Abstract: A level shifter includes: a voltage dividing unit receiving a first voltage and an input voltage, and generating a middle voltage between the first voltage and the input voltage; first and second voltage compensating units connected to the voltage dividing unit and connected between the first voltage and a second voltage, for compensating a voltage variation of the voltage dividing unit; and an output unit receiving an output from the voltage dividing unit and generating an output voltage.

Abstract: Provided are a level shifter and a semiconductor device having an OFF-chip driver (OCD) using the same. The level shifter includes a plurality of series connected logic gates receiving a first-state input signal having a first power supply voltage level and generating a level-shifted first-state output signal having a second power supply voltage level. The logic gates receive as power supply voltages at least one intermediate power supply voltage having at least one voltage level intermediate between the first power supply voltage level and the second power supply voltage level, and an intermediate power supply voltage applied to the present logic gate is equal to or higher than an intermediate power supply voltage applied to the previous logic gate.

Abstract: A level shifter is disclosed and generates an output signal having a swing voltage shifted by a positive boost voltage with respect to an input signal. The level shifter comprises; an enable unit adapted to enable the output signal in response to the input signal, and a disable unit adapted to disable the output signal in response to the input signal.

Abstract: A level shifter circuit 28 has a first buffer circuit 30 and a second buffer circuit 32, 34. An intermediate signal generated by the first buffer circuit 30 is directly passed to the second buffer circuit 32, 34 to control output of one of its output signal levels. A feedback signal generated in response to the input signal within the first power domain containing the first buffer circuit 30 is passed directly to the second buffer circuit 32, 34 to control the output signal level reaching the other of the output values. A feedback circuit comprising cross-coupled PMOS transistors 38, 40 is provided to boost the feedback signal level up to the voltage level of the second voltage domain which contains the feedback circuit 38, 40 as well as the second buffer circuit 32, 34. The level shifter circuit 28 has a low latency and a low static power consumption.

Abstract: A level shifter in which short circuit current and the increase in delay are reduced when a first power source is controlled. In a level shifter for converting a signal level of a first logic circuit to which a first power source is supplied into a signal level of a second logic circuit to which a second power source is supplied, the circuit includes a switching circuit between a GND power source terminal of a level shift core circuit and a GND power source. The switching circuit is controlled by a third logic circuit which generates a control signal under control of the first power source, and a pull-up/pull-down circuit at an output of the level shift core circuit. The pull-up and/or pull-down circuit is controlled by the third logic circuit.

Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.

Abstract: An integrated circuit (IC) design, method and program product for reducing IC design power consumption. The IC is organized in circuit rows. Circuit rows may include a low voltage island powered by a low voltage (Vddl) supply and a high voltage island powered by a high voltage (Vddh) supply. Circuit elements including cells, latches and macros are placed with high or low voltage islands to minimize IC power while maintaining overall performance. Level converters may be placed with high voltage circuit elements.

Abstract: In one form a circuit has a bias stage having an input signal terminal for receiving an input signal. The circuit modifies the input signal with a drive stage to provide an output signal in complement form. A drive transistor in the drive stage of the circuit has a bulk that is connected to a terminal of a load and to a control electrode coupled to the input signal terminal. A bias transistor in the bias stage of the circuit has a bulk that is directly connected to the terminal of the load and to the bulk of the drive transistor. The bias transistor has a control electrode coupled to the input signal terminal. The input signal biases the bulks of the drive transistor and the bias transistor and reduces transistor threshold voltage. Linearity of circuit output impedance is improved and RF interference reduced. Lower voltage operation is also provided.