Abstract: A circuit and method for generating a protection voltage includes a pair of voltage-generating circuits that generate voltages from the power supply voltage. The voltages have a differing dependence on the power supply voltage so that a difference between the first voltage and the second voltage changes sign for a particular value of the power supply voltage. The voltages are supplied to a protection voltage generating circuit that includes a pair of amplifiers having inputs that receive a respective one of the voltages and each of the amplifiers provides negative feedback to the other. An output circuit generates the protection voltage according to a maximum or a minimum value among the amplifier outputs, so that the protection voltage is monotonic with respect to variation of the power supply voltage.

Abstract: A disclosed comparator includes a comparison circuit including a differential unit that compares an input signal with a reference signal and changes a level of a signal output to a first node in accordance with a result of comparison and an amplifier unit that includes a load element and outputs a signal in accordance with a potential of the first node to a second node, and a positive feedback circuit that is connected to the second node and a third node and changes a level of a signal at the third node at a rate higher than a change rate of a level of a signal at the second node in accordance with a change in a level of a signal at the second node.

Abstract: Some embodiments include an integrated assembly having a primary access transistor. The primary access transistor has a first source/drain region and a second source/drain region. The first and second source/drain regions are coupled to one another when the primary access transistor is in an ON mode, and are not coupled to one another when the primary access transistor is in an OFF mode. A charge-storage device is coupled with the first source/drain region. A digit line is coupled with the second source/drain region through a secondary access device. The secondary access device has an ON mode and an OFF mode. The digit line is coupled with the charge-storage device only when both the primary access transistor and the secondary access device are in their respective ON modes.

Abstract: Apparatuses, systems, and methods for compensated sense amplifier with cross-coupled n-type transistors. A sense amplifier has a pair of p-type transistors coupled between a system voltage and respective first and second gut nodes. When a command signal is active, the p-type transistors are coupled in a diode fashion from the system voltage to the respective gut nodes. The amplifier also has a pair of n-type transistors which are cross coupled, where a first n-type transistor has a node coupled to the first gut node and a gate coupled to the second gut node and the second n-type transistor has a node coupled to the second gut node and a gate coupled to the first gut node. Each of the n-type transistors may have a separate current flowing through them and respective one of a pair of feedback transistors to a ground voltage.

Abstract: A device includes a first transistor (M1) having a control terminal that is a first comparator input, a first terminal that can be coupled to a voltage source, and a second terminal that provides a first comparator output; a second transistor (M2) having a control terminal that is a second comparator input, a first terminal that can be coupled to the voltage source, and a second terminal that provides a second comparator output; a third transistor (M3) having a control terminal coupled to M1, and a first terminal coupled to ground; a fourth transistor (M4) having a control terminal coupled to M2, and a first terminal coupled to ground; first switches that couple M3 second terminal to M3 control terminal, and M4 second terminal to M4 control terminal; and second switches that couple M3 second terminal to the M2 second terminal, and M4 second terminal to the M1 second terminal.

Abstract: A semiconductor device includes first and second protection circuits. The first protection circuit includes a timer circuit, a voltage detection circuit, and a discharge element. The second protection circuit includes a discharge circuit. The timer circuit is connected between a first pad on a power supply potential side and a second pad on a reference potential side. The voltage detection circuit is connected between the first and second pads on an output side of the timer circuit. The discharge element is connected between the first and second pads on an output side of the voltage detection circuit. The discharge circuit is connected between a third pad on the power supply potential side and a fourth pad on the reference potential side on the output side of the timer circuit.

Abstract: The present disclosure provides a current detection circuit having a high detection precision. The current detection circuit includes: a current output type differential amplifier; a first input resistor, configured to be connected between a first input end of the differential amplifier and a first current sense terminal; a second input resistor, configured to be connected between a second input end of the differential amplifier and a second current sense terminal; an output resistor, configured to be connected to an output end of the differential amplifier; a first feedback current path, configured to allow a first feedback current to flow between the first input end and the output end of the differential amplifier; and a second feedback current path, configured to allow a second feedback current to flow between the second current sense terminal and the output end of the differential amplifier.

Abstract: High-performance radio frequency analog-to-digital converters (RF ADCs) demand high bandwidth, high linearity, and low noise input amplifiers. A Class-AB amplifier, including common-gate transistor devices and common-source transistor devices operating in parallel, offers high bandwidth and high linearity, while offering lower power operation when compared to Class-A amplifiers. The Class-AB amplifier can be followed by a Class-AB unity gain buffer comprising common-source transistor devices to provide additional isolation for the RF ADC from the circuitry preceding the Class-AB amplifier.

Abstract: Circuits and methods for reducing and cancelling out kickback noise are disclosed. In one example, a circuit for a comparator is disclosed. The circuit includes: a first transistor group, a second transistor group, and a first switch. The first transistor group comprises a first transistor having a drain coupled to a first node, and a second transistor having a source coupled to the first node. Gates of the first transistor and the second transistor are coupled together to a first input of the comparator. The second transistor group comprises a third transistor having a drain coupled to a second node, and a fourth transistor having a source coupled to the second node. Gates of the third transistor and the fourth transistor are coupled together to a second input of the comparator. The first switch is connected to and between the first node and the second node.

Abstract: A front-end module comprises a low-dropout (LDO) voltage regulator, a reference current generator, a power amplifier, and a voltage reference configured to provide a reference voltage to the LDO voltage regulator and the reference current generator. The LDO voltage regulator, reference current generator, power amplifier, and voltage reference are integrated on a first semiconductor die.

Abstract: A receiver device implements enhanced data reception with edge-based clock and data recovery such as with a flash analog-to-digital converter architecture. In an example embodiment, the device implements a first phase adjustment control loop, with for example, a bang-bang phase detector, that detects data transitions for adjusting sampling at an optimal edge time with an edge sampler by adjusting a phase of an edge clock of the sampler. This loop may further adjust sampling in received data intervals for optimal data reception by adjusting the phase of a data clock of a data sampler such a flash ADC. The device may also implement a second phase adjustment control loop with, for example, a baud-rate phase detector, that detects data intervals for further adjusting sampling at an optimal data time with the data sampler.

Abstract: A semiconductor amplifier circuit has a driver that outputs a drive signal corresponding to an input signal and switches drive capability of the drive signal in accordance with a logic of an instruction signal, an instruction signal setting unit that sets the logic of the instruction signal in accordance with whether the input signal satisfies a predetermined condition, and an output circuit that comprises a control terminal to which the drive signal is input and an output terminal that outputs a signal obtained by amplifying the input signal.

Abstract: A device includes a first transistor coupled to an input voltage source and to an output voltage node and an amplifier comprising a first input, a second input, and an output. The device also includes a second transistor coupled to the input voltage source and the first input of the amplifier and a third transistor coupled to the second transistor and a ground node. The third transistor includes a control terminal coupled to the output of the amplifier. The device also includes a first voltage-controlled voltage source coupled to a control terminal of the first transistor and a control terminal of the second transistor and a second voltage-controlled voltage source coupled to the first transistor and the second input of the amplifier.

Abstract: A semiconductor apparatus may include a degradation detection circuit and a circuit block. The degradation detection circuit may detect a degradation occurred in a semiconductor apparatus and generate degradation information. The circuit block may include at least one transistor configured to receive a variable bias voltage and a variable gate voltage.

Abstract: An adiabatic logic-in-memory based complementary metal-oxide-semiconductor/magnetic-tunnel-junction (ALiM CMOS/MTJ) circuit utilizes an adiabatic logic based pre-charged sense amplifier (PCSA) to recover energy from its output load capacitors. The ALiM CMOS/MTJ includes a non-volatile magnetic-tunnel-junction (MTJ) based memory. The ALiM CMOS/MTJ also includes a dual rail complementary metal-oxide-semiconductor (CMOS) logic that performs logic operations in association with the MTJ, and thereby generates logic outputs based on logic inputs. The ALiM CMOS/MTJ also includes the adiabatic PCSA, which is operatively coupled to the dual rail CMOS logic. The adiabatic logic based PCSA includes PCSA circuitry for which an input is a multi-phase power clock, and a charge recovery circuit having the output load capacitors. The charge recovery circuit is operatively coupled to the PCSA circuitry such that the ALiM CMOS/MTJ circuit uses the power clock to recover energy from the output load capacitors.

Abstract: Methods and apparatus for sensing a memory cell using lower offset, higher speed sense amplifiers are described. A sense amplifier may include an amplifier component that is configurable to operate in an amplifier mode or a latch mode. In some examples, the amplifier component may be configured to operate in the amplifier or latch mode by activating or deactivating switching components inside the amplifier component. When configured to operate in the amplifier mode, the amplifier component may be used, during a read operation of a memory cell, to pre-charge a digit line and/or amplify a signal received from the memory cell. When configured to operate in the latch mode, the amplifier component may be used to latch a state of the memory cell. In some cases, the amplifier component may use some of the same internal circuitry for pre-charging the digit line, amplifying the signal, and/or latching the state.

Abstract: A buffer circuit may include: an amplifying circuit configured to change, based on a first input signal and a second input signal, voltage levels of a first output node and a second output node in a range between a first power voltage and a second power voltage; a latch circuit configured to latch the voltage levels of the first output node and the second output node; a first variable load configured to adjust, based on a reset signal, an amount of current provided by a first power voltage terminal at the first power voltage to the first output node; a second variable load configured to adjust, based on the reset signal, an amount of current provided by the first power voltage terminal to the second output node; and a reset circuit configured to drive the first output node to the second power voltage based on the reset signal.

Abstract: A level shifter circuit configured to convert a digital input signal with a first high logic level to a digital output signal having a second high logic level substantially higher than the first high logic level is provided. The level shifter circuit may include a PMOS latch circuit configured to receive the digital input signal and having first and second latch outputs and a current mirror circuit having a mirror input and a mirror output. The mirror input may be at least partly gated by a switch having a control input. The mirror output may be coupled to the first latch output. The control input may be coupled to the first or second latch outputs, and the digital output signal is provided from the first and/or second latch outputs.

Abstract: A current-controlled oscillator receives an input current. Ramp voltage generating circuitry generates first and second ramp voltages in response to the input current. Selecting circuitry selects one of the first and second ramp voltages depending on their relative values. Switching circuitry receives a selected ramp voltage, generates a signal based on the selected ramp voltage relative to a reference voltage, and outputs a clock signal. In one embodiment, a comparator receives the reference voltage, one of the first and second ramp voltages, and outputs a comparison signal. Logic circuitry controls the ramp voltage generating circuitry to output one of the ramp voltages during one half of a clock cycle and to output the other ramp voltage during another half cycle of the clock signal based on the comparison signal and logic states of the logic circuitry.

Abstract: An apparatus has an array of memory cells and a controller coupled to the array. The controller is configured to track a sub-threshold leakage current through a number of memory cells of the array and determine a threshold voltage based on the sub-threshold leakage current.

Abstract: A device includes a comparator, a reference signal node electrically coupled to a first input of the comparator, a plurality of test signal nodes, a plurality of first select signal nodes, a first multiplexer coupled between the plurality of test signal nodes and the comparator, a plurality of latches, a plurality of second select signal nodes, and a second multiplexer. Each first select signal node corresponds to a test signal node. The first multiplexer electrically couples one of the plurality of test signal nodes to a second input of the comparator in response to a corresponding first select signal. Each latch corresponds to a test signal node. Each second select signal node corresponds to a latch. The second multiplexer electrically couples the output of the comparator to an input of one of the plurality of latches in response to a corresponding second select signal.

Abstract: A memory system includes a sense amplifier electrically coupled to a first bitline and a second bitline associated with a column of a memory array, a bl transistor electrically coupled to the first bitline, wherein the bl transistor is configured to receive as input a first electrical signal from the first bitline, and a blb transistor electrically coupled to the second bitline, wherein the blb transistor is configured to receive as input a second electrical signal from the second bitline, wherein an output of the bl transistor and an output of the blb transistor are electrically coupled together as a common output, and wherein the sense amplifier is configured to receive as an input the common output of the bl transistor and the blb transistor.

Abstract: There are provided measures for improvement of coverage hole analysis. Such measures exemplarily include detecting a radio link failure, producing a failure report including information indicative of a radio condition during a time period between said radio link failure and a successful establishment of a radio link, detecting said successful establishment of said radio link, and transmitting, after detection of said successful establishment of said radio link, said failure report.

Abstract: A power detector for use in an RF receiver. The detector includes a power reference generator and a power quantizer. The power reference generator develops a power reference current, voltage, or signal as a function of a power transferred via a received RF signal. The power quantizer is responsive to the power reference current, voltage, or signal to develop a digital field power value indicative of the power reference current, voltage, or signal.

Abstract: A memory device including an array of memory cells including bit lines, and biasing circuitry cells. A sense amplifier has a data line input connected to a data line, and a reference input. The controllable reference current source can be connected to the reference input of the sense amplifier. Control circuits on the device are configured to cause execution of a read operation, where the read operation includes a first phase in which the array is biased to induce leakage current on the selected bit line, and a second phase in which the array is biased to read a selected memory cell on the selected bit line. A circuit on the device is configured to sample the leakage current in the first phase, and to control the controllable reference current source during the second phase, as a function of the sampled leakage current.

Abstract: A compensated comparator is provided, including a decision stage and a differential stage provided with two transistors connected by their sources, the differential stage being provided with compensation means to compensate the effects of a dispersion of the threshold voltages of the transistors forming the differential stage, the compensation means including first and second capacitors each connected to a gate of one of the two transistors, and being configured to memorize a voltage that is a function of a threshold voltage of the considered transistors.

Abstract: A random code generator includes a differential cell array, a power circuit, a voltage detector, a control circuit and a read/write circuit. The power circuit provides a supply voltage to a node. The differential cell array includes plural differential cells. Each differential cell includes two sub-cells. The two sub-cells have process variations. During the enrollment, one sub-cell is programmed, and the other sub-cell is subjected to a program inhibition. In addition, a random code is generated according to the storage state of the differential cell.

Abstract: A voltage comparator comparing a voltage of a first input signal and a voltage of a second input signal is provided. The voltage comparator includes: a first switch pair transmitting, respectively, the first input signal and the second input signal to a control terminal of a first transistor and a control terminal of a second transistor in response to a clock signal; a second switch pair connecting a first terminal and a second terminal of the first transistor and connecting a first terminal and a second terminal of the second transistor in response to at least one of the clock signal and a reset signal; and a first reset switch connecting the control terminal of the first transistor and the control terminal of the second transistor in response to the reset signal.

Abstract: A differential amplifier circuit comprises: first and second input terminals; first and second output terminals; a first transistor comprising a gate terminal connected to the first input terminal; a second transistor comprising a gate terminal connected to the second input terminal; a first resistor connected between the source terminal of the first transistor and the source terminal of the second transistor; a third transistor comprising a drain terminal connected to the source terminal of the first transistor, a gate terminal connected to the drain terminal of the first transistor, and a source terminal connected to the first output terminal; a fourth transistor comprising a drain terminal connected to the source terminal of the second transistor, a gate terminal connected to the drain terminal of the second transistor, and a source terminal connected to the second output terminal; first to fourth current sources; and second and third resistors.

Abstract: Systems and methods according to one or more embodiments are provided for a current comparator with biasing circuitry to provide for low power consumption and high-speed performance. In one example, a system includes an input port to receive a current pulse and an amplifier configured to provide a voltage pulse at an output port in response to the current pulse. The system also includes a first biasing circuit coupled between the output port and the input port to selectively limit a voltage at the input port. The system further includes a second biasing circuit coupled to the amplifier to selectively adjust a bias of the amplifier.

Abstract: A high speed internal hysteresis comparator is provided. Impedance supply units are disposed at control terminals of transistors of an active load of a differential amplifier of the high-speed hysteresis comparator, such that a gain when the transistors operate in an active region and a responding speed of the high-speed hysteresis comparator are increased.

Abstract: A semiconductor memory device according to the present invention includes a first memory cell, a second memory cell, a dummy transistor, and a voltage control circuit. The first memory cell has a first transistor that is coupled to a first word line, a first source line, and a bit line. The second memory cell has a second transistor that is coupled to a second word line, a second source line, and the bit line. The dummy transistor has the same structure as the first transistor and is coupled to a dummy word line, a dummy source line, and a dummy bit line. When a predetermined voltage for writing data into the first memory cell is to be applied to the first word line, the voltage control circuit couples the dummy bit line to the second source line and applies the predetermined voltage to the first dummy word line.

Abstract: A semiconductor memory device includes a resistive-type memory cell and a sense amplifier for reading data from the memory cell. First and second transistors connected in parallel between a first node connected to the memory cell and a second node connected to the sense amplifier. The first transistor has a size that is different from the second transistor. Each of the first and second transistors has a gate that is connected to a first voltage source. A switch circuit controls a conduction state between the first and second nodes via separate paths through the first transistor and the second transistor. The sense amplifier compares a first current supplied to the memory cell via the first path at a first timing and a second current supplied to the memory cell via the second path at a second timing different from the first timing.

Abstract: A sense amplifier for reading a via Read-Only Memory (Via-ROM) is provided. The sense amplifier includes a read circuit, an adaptive keeper circuit and a leakage monitor circuit. The read circuit is connected to the via-ROM. The adaptive keeper circuit is connected to the read circuit. The leakage monitor circuit is connected to the adaptive keeper circuit for forming a current mirror, such that the adaptive keeper circuit compensates a read voltage of a memory cell whose via is opened when a bit-line leakage is happened.

Abstract: Embodiments of the present disclosure provide a circuit structure including: a circuit driven by first and second sense amplifier (SA) output; a first driver having a first PMOS coupled to a node and to a pair of serially coupled NMOSs, wherein the first SA output is coupled to the first PMOS and the first NMOS of the first driver; a second driver having a second PMOS coupled to a node and a pair of coupled NMOSs, wherein the second SA output is coupled to the second PMOS and second NMOS of the second driver; a first and second supply PMOS, wherein first supply PMOS is coupled to the node of the first driver and to the second supply PMOS and first NMOS of the second driver, and wherein the second supply PMOS is coupled to node of second driver and to the first supply PMOS and second NMOS of first driver.

Abstract: Embodiments include techniques for static random access memory (SRAM) bitline equalization using phase change material (PCM). The techniques include detecting a defect in SRAM bitlines, and programming a variable resistance PCM cell to offset the detected defect. The techniques also include measuring signal development time for the SRAM bitlines, and adjusting the programming of the variable resistance PCM cell based at least in part on the measured signal development for the SRAM bitlines.

Abstract: The present invention is directed to data communication. More specifically, an embodiment of the present invention provides a technique for detecting loss of signal. An incoming data stream is sampled and a recovered clock signal is generated accordingly. An output clock signal of a higher frequency than the recovered clock signal is generated by a transmission PLL. The frequency of the recovered clock signal is compared to a divided frequency of the output clock signal. If a difference between the recovered clock signal and the output clock signal is greater than a threshold, a loss of signal indication is provided. There are other embodiments as well.

Abstract: The present invention is directed to data communication. More specifically, an embodiment of the present invention provides a technique for detecting loss of signal. An incoming data stream is sampled and a recovered clock signal is generated accordingly. An output clock signal of a higher frequency than the recovered clock signal is generated by a transmission PLL. The frequency of the recovered clock signal is compared to a divided frequency of the output clock signal. If a difference between the recovered clock signal and the output clock signal is greater than a threshold, a loss of signal indication is provided. There are other embodiments as well.

Abstract: Apparatuses, systems, and methods are disclosed for accessing non-volatile memory. A bit line is coupled to storage cells for a non-volatile memory element. A sense amplifier is coupled to a bit line. A sense amplifier includes a sense circuit and a bias circuit. A sense circuit senses an electrical property of a bit line for reading data from one or more storage cells, and a bias circuit applies a bias voltage to the bit line for writing data to one or more storage cells. A bias circuit and a sense circuit comprise separate parallel electrical paths within a sense amplifier.

Abstract: There is provided a solid-state image sensor including a pixel array unit in which pixels are arrayed, the pixel including a photodiode converting an optical signal into an electrical signal, and a readout unit which reads out an analog image signal from the pixel to a signal line and processes the read out analog pixel signal in a unit of column. The readout unit includes a ?? modulator which has a function to convert the analog pixel signal in to a digital signal, and an amplifier which is arranged on an input side of the ?? modulator and amplifies the analog pixel signal read out to the signal line using a set gain to input the signal to the ?? modulator.

Abstract: In one example, a driver circuit includes a differential transistor pair configured to be biased by a current source and including a differential input and a differential output. The driver circuit further includes a resistor pair coupled between a node pair and the differential output, a transistor pair coupled between a voltage supply and the node pair, and a bridge transistor coupled between the node pair. The driver circuit further includes a pair of three-state circuit elements having a respective pair of input ports, a respective pair of control ports, and a respective pair of output ports. The pair of output ports is respectively coupled to the node pair. The pair of control ports is coupled to a common node comprising each gate of the transistor pair and a gate of the bridge transistor.

Abstract: A negative bitline write assist circuit includes a bias capacitor configured to facilitate driving the capacitance of a bitline. The negative bitline write assist circuit may be modularly replicated within a circuit to change the amount of negative voltage on the bitline during write operations. The bitline write assist circuit may be coupled directly to the bitline, removing the need to add a pull-down transistor to the write driver.

Abstract: A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.

Abstract: Provided is a semiconductor device including first to sixth capacitors, first to fourth wirings, first and second sense amplifiers, and a memory cell array over the first and second sense amplifiers. The first wiring is electrically connected to the memory cell array, one electrode of the first capacitor, the third wiring via a source and a drain of a first transistor, the fourth wiring via the fifth capacitor, and the second wiring via the first sense amplifier. The second wiring is electrically connected to one electrode of the second capacitor, the fourth wiring via a source and a drain of a second transistor, and the third wiring via the sixth capacitor. The third wiring is electrically connected to one electrode of the third capacitor, and the fourth wiring via the second sense amplifier. The fourth wiring is electrically connected to one electrode of the fourth capacitor.

Abstract: Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.

Abstract: A zero-crossing voltage detection circuit for detecting a phase voltage of a converter includes a comparator, a first transistor and a second transistor. The first transistor has a first base, a first collector and a first emitter. The first base couples with the first collector. The first emitter receives the phase voltage. The first collector provides a first voltage to a first terminal of the comparator. The second transistor has a second base, a second collector and a second emitter. The second base couples with the first base. The second base couples with the second collector. The second emitter receives a ground voltage. The second collector provides a second voltage to a second terminal of the comparator. The comparator compares the first voltage with the second voltage to generate a zero-crossing voltage signal.

Abstract: Single ended bitline current sense amplifier for SRAM applications. The present disclosure relates to current sense read amplifier for use as a read amplifier in a memory arrangement of memory cell groups, wherein in each of the memory cell groups cells includes at least one read port connected to a read amplifier by a bitline, and wherein said read amplifiers are connected to a data output. The current sense read amplifier includes a voltage regulator to keep a bitline voltage at a constant voltage level below a power supply voltage and above a ground, a measurement circuit to detect a high current value and a low current value in a input signal, and a generator to generate a high voltage level output signal when the high current value input is detected and to generate a low voltage level output signal when the low current level value is detected.

Abstract: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to (a) buffer write signals presented on a data bus connected between a memory channel and a memory controller, (b) buffer read signals presented on the data bus and (c) condition the write signals. The conditioning may be implemented by (i) converting the write signals to a first differential write signal on a first differential write line and a second differential write signal on a second differential write line and (ii) connecting (a) a negative impedance and (b) a combined resistive and capacitive load between the first and second differential write lines. The second circuit may be configured to (a) convert the first and the second differential write signals to a single-ended write signal and (b) present the single-ended write signal to the data bus.

Abstract: An image capturing system includes a photoelectric conversion unit, a charge holding unit, a multiple sampling information setting unit, a multiple sampling unit, a conversion unit, and an image reconstruction unit. The photoelectric conversion unit converts optical signals received by a plurality of pixels to electric signals. The charge holding unit stores the electric signals and holds the electric signals as charge signals. The multiple sampling information setting unit sets multiple sampling information used for a multiple sampling process. The multiple sampling information includes first multiple sampling information and second multiple sampling information. The multiple sampling unit performs the multiple sampling process using the multiple sampling information and the charge signals so as to output signals. The conversion unit converts the output signals to digital signals.

Abstract: The present invention is directed to data communication. More specifically, an embodiment of the present invention provides a technique for detecting loss of signal. An incoming data stream is sampled and a recovered clock signal is generated accordingly. An output clock signal of a higher frequency than the recovered clock signal is generated by a transmission PLL. The frequency of the recovered clock signal is compared to a divided frequency of the output clock signal. If a difference between the recovered clock signal and the output clock signal is greater than a threshold, a loss of signal indication is provided. There are other embodiments as well.