Abstract: An example sample-and-hold circuit includes a first and second input resistors, each having first and second terminals; first and second transistors coupled in series between the second terminals of the first and second input resistors; and third and fourth input resistors, each having first and second terminals; and third and fourth transistors coupled in series between the second terminals of the third and fourth input resistors. A first capacitor is coupled between the first and second transistors and a second capacitor is coupled between the third and fourth transistors. The control terminals of the first and third transistors are coupled together, and the control terminals of the second and fourth transistors are coupled together.

Abstract: A comparator includes a first-stage circuit, a second-stage circuit, a first switching circuit and a second switching circuit. The first-stage circuit includes a first input circuit and a second input circuit. The first switching circuit is configured to control the conduction of the first input circuit, and the second switching circuit is configured to control the conduction of the second input circuit. The first input circuit is configured to generate a first differential signal in a sampling phase when being switched on. The second input circuit is configured to generate a second differential signal in a sampling phase when being switched on. The second-stage circuit is configured to amplify and latch the first differential signal or the second differential signal in a regeneration phase to output a comparison signal.

Abstract: A semiconductor device includes a first switch coupling a first switch coupling a first power source and a first node according to a first control signal; a sense amplifier coupled between the first node and a second node and performing a sensing operation; a second switch coupling a second power source and the second node according to a second control signal; and a sense amplifier control circuit providing the first control signal and the second control signal. The sense amplifier control circuit controls the second control signal so that a voltage of the second node reaches a shift voltage higher than a voltage of the second power source during a first sensing period of the sensing operation and a bias current flows through the second node during a second sensing period of the sensing operation. The sensing period is subsequent to the first sensing period.

Abstract: A semiconductor memory device includes a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal. The signal propagation circuit includes a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit, and further including a terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

Abstract: A data receiving circuit is provided. The data receiving circuit includes a data input circuit, a latch circuit, and an equalizer. The data input circuit is configured to receive an input signal. The latch circuit is connected to the data input circuit and configured to output an output signal in response to the input signal. The equalizer is connected to the latch circuit and configured to provide a first voltage at a first node and a second voltage at a second node at an equalizing stage. The first voltage is different from the second voltage.

Abstract: A sub-sense amplifier includes a semiconductor substrate, a first pair of complementary transistors, a second pair of complementary transistors, and at least one ground transistor. The first pair and second pair of complementary transistors and the ground transistor are formed on the semiconductor substrate. The first pair of complementary transistors are disposed in line symmetry with a center line of the sub-sense amplifier as a symmetry axis, and gates of the first pair of complementary transistors are coupled to a node. The second pair of complementary transistors are also disposed in line symmetry with the center line, wherein the current directions of the second pair of complementary transistors are the same. Sources and drains of the first pair of complementary transistors are coupled to gates and sources of the second pair of complementary transistors, respectively. The ground transistor connects in series with the second pair of complementary transistors.

Abstract: An example apparatus comprises an array of memory cells coupled to sensing circuitry including a first sense amplifier, a second sense amplifier, and a logical operation component. The sensing circuitry may be controlled to sense, via first sense amplifier, a data value stored in a first memory cell of the array, sense, via a second sense amplifier, a data value stored in a second memory cell of the array, and operate the logical operation component to output a logical operation result based on the data value stored in the first sense amplifier and the data value stored in the second sense amplifier.

Abstract: A current steering comparator includes an amplifier circuit, a bias circuit, a latch circuit, and a detector circuit. The amplifier circuit is configured to compare a first input signal with a second input signal during a comparison phase, in order to output a first signal and a second signal. The bias circuit is configured to utilize a tunable capacitor to bias the amplifier circuit during the comparison phase. The latch circuit is configured to generate a first output signal and a second output signal according to the first signal and the second signal during the comparison phase. The detector circuit is configured to detect the first output signal and the second output signal according to a predetermined clock signal to generate a control signal, in order to adjust the tunable capacitor.

Abstract: According to one embodiment, a semiconductor integrated circuit device comprises first and second transistors having control terminals receiving an input signal and an inversion signal of the input signal, third and fourth transistors having control terminals receiving the input signal and the inversion signal, first and second inverters in which outputs are connected to inputs of other converters, and a fifth transistor connected to the first to fourth transistors. The third and fourth transistors are connected to outputs of the second and the first inverters. Clock signal is supplied to the fifth transistor.

Abstract: Systems, methods, circuits, and apparatus for managing flip flop circuits are provided. In one aspect, a flip flop circuit includes a first sub-circuit having a first inner node between a first input node and a first output node, a second sub-circuit having a second inner node between a second input node and a second output node, and a third sub-circuit coupled between the first and second inner nodes. The third sub-circuit is configured to be: in an open state to conductively disconnect the first and second inner nodes, and in a close state to conductively connect the first and second inner nodes, such that a first output at the first output node corresponds to a second input at the second input node and a second output at the second output node corresponds to a first input at the first input node.

Abstract: The present disclosure provides a high-speed regenerative comparator circuit, including: a signal input stage connected with an input terminal for differential signal input; a latch for caching and serving as a differential signal output terminal; a current source connected with the signal input stage for providing a power supply voltage; a fast path connected with the output terminal and used for increasing a voltage difference of the output terminal and turning on a positive feedback network of the latch; and a reset switch, including a first reset switch and a second reset switch. In the high-speed regenerative comparator circuit of the present disclosure, the transmission delay of the regenerative comparator circuit can be greatly reduced; and in a latch phase, a bias voltage is disconnected by means of timing control, and thus the power consumption of a comparator can be reduced. The present disclosure has simple circuit and high reliability.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: A read path for reading data from a memory includes a sense amplifier having data (SAT) and data complement (SAC) output nodes and a latch. The latch includes an input tri-state inverter including first and second PMOS transistors connected between VDD and an intermediate node, and first and second NMOS transistors connected between VSS and the intermediate node. A gate connection of the first PMOS and NMOS transistors is connected to the SAT node; a gate connection of the second PMOS transistor is connected to a sense amplifier enable complement input; and a gate connection of the second NMOS transistor is connected to a sense amplifier enable input. The latch also includes an output driver with an input connected to the intermediate node and an output connected to a data output node. The latch thus has two gate delays between the SAT node and the data output node.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: A sense amplifier enable signal and a tracking signal are generated in response to an indication that a sufficient voltage difference has developed across bit lines of a memory. The sense amplifier enable signal has a pulse width between a leading edge and a trailing edge. The sense amplifier enable signal is propagated along a first U-turn signal line that extends parallel to rows of the memory array and is coupled to sense amplifiers arranged in a row to generate a sense amplifier enable return signal. The tracking signal is propagated along a second U-turn signal line extending parallel to columns of the memory array to generate a tracking return signal. The sense amplifier enable return signal and the tracking return signal are logically combined to generate a reset signal. Timing of the trailing edge of the pulse width is controlled by the reset signal.

Abstract: A digital radio-frequency (RF) circuitry is disclosed. In one aspect, the circuitry includes a digitally controlled amplifier configured to receive an RF input signal and a digital control signal, and to output an amplitude controlled output signal. The digitally controlled amplifier includes one or more common-source amplifying unit cells. A respective common-source amplifying unit cell includes a sources node connected to a switching circuitry controllable by the digital control signal so as to activate or deactivate the common-source amplifying unit cell. The switching circuitry comprises a first switch configured to connect the source node with a first power supply node and a second switch configured to connect the source node with a second power supply node when activating and deactivating, respectively, the common-source amplifying unit cell.

Abstract: A level shifter includes: a first inverter configured to receive an input signal in a first voltage domain and shift the input signal from the first voltage domain to a first output signal at a first output terminal in a second voltage domain higher than the first voltage domain in response to a logical high state of a first clock signal in the first voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the first voltage domain to a second output signal at a second output terminal in the second voltage domain in response to the logical high state; a pair of NMOS sensing transistors; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.

Abstract: Described is a high speed, low power level shifter circuit which includes a level shifter coupled to a sensing circuit. The level shifter includes a pair of source transistors, a pair of input transistors, and a pair of switching circuits connected between the source transistors and the input transistors. The sensing circuit turns off a switching circuit on an active side of the level shifter based on detecting that an output voltage of the level shifter has completed a voltage level transition from a first logic level voltage to a second logic level voltage. An open circuit is established on the active side and turns off the pair of source transistors. The other switching circuit is turned on. Static current flow on the active side of the level shifter is stopped and the output voltage is latched to a voltage representative of the second logic level voltage.

Abstract: Various embodiments provide a hybrid sensing scheme that may compensate for cell resistance instability in semiconductor devices, such as multi-level cell (MLC) type phase-change random-access memory (PCRAM) structures. Various embodiments may achieve a stable resistance state supporting MLC applications in PCRAM cells.

Abstract: A level shifter includes: an input terminal configured to receive an input signal in a first voltage domain; a first output terminal; a second output terminal; a first inverter configured to receive and shift the input signal to a first output signal at the first output terminal in a second voltage domain higher than the first voltage domain in response to a logical high state of an enable signal in the first voltage domain; a second inverter configured to receive and shift a complement of the input signal to a second output signal at the second output terminal in the second voltage domain in response to the logical high state; a pair of NMOS sensing transistors; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the enable signal.

Abstract: Techniques for autozero to an offset value for a slope detector for voltage droop monitoring are described herein. An aspect includes generating a first offset voltage by a circuit. Another aspect includes generating a second offset voltage by the circuit, the second offset voltage being distinct from the first offset voltage. Another aspect includes, based on a first comparator of the circuit entering an autozero mode, connecting a first terminal of the first comparator to the first offset voltage. Another aspect includes connecting a second terminal of the first comparator to the second offset voltage. Yet another aspect includes performing an autozero operation in the first comparator, wherein a trip point of the first comparator is set to a difference between the first offset voltage and the second offset voltage by the autozero operation.

Abstract: A nonvolatile memory device includes: a first reference cell; a second reference cell; a circuit that generates a first mirror current proportional to a current flowing through the first reference cell; a circuit that generates a second mirror current proportional to a current flowing through the second reference cell; a sense amplifier that reads out data by comparing a current flowing through a memory cell with a reference current; and a selection circuit that sets a selection state of the first reference cell and the second reference cell such that, in a readout mode, the reference current is generated based on at least the first mirror current, and in a verify mode, the reference current is generated based on the second mirror current.

Abstract: A sense amplifier includes a latch type sense unit that detects a voltage difference between a bit line and a bit line bar and causes a voltage difference between a first latch output node and a second latch output node. The sense amplifier further includes a first latch connection unit that electrically connects the bit line to and disconnects the bit line from the first latch output node.

Abstract: Embodiments herein describe a memory cell (e.g., a SRAM memory cell) that includes power selection logic for disconnecting storage inverters from a reference voltage source when writing data into the cell. In one embodiment, the memory cells may be disposed long distances (e.g., more than 100 microns) from the data drivers in the integrated circuit which can result in the data lines having large RC time constants. In one embodiment, disconnecting the memory cells from a power supply may counter (or mitigate) the large RC time constants of the data lines.

Abstract: Embodiments include a method, memory system and a device for the operating a bit-line sensing circuit for bias-controlled bit-line sensing, the embodiments include an input for receiving a single-ended local bit-line signal, a pass device having a first terminal coupled to the input and a second terminal connected to a global bit-line node, The embodiments also include a first inverter having an input connected to the global bit-line node, a header circuit coupled to the first inverter and a first direct current (DC) bias circuit, and a footer circuit coupled to the first inverter and a second DC bias circuit. The embodiments include a second gated inverter having an input coupled to an output of the first inverter.

Abstract: A current sense amplifier is provided. The amplifier comprises a first cross coupled inverter, a second cross coupled inverter, and a transmission gate. The first cross coupled inverter has a first source coupled to sense current input. The second cross coupled inverter has a second source coupled to a reference current input. The transmission gate comprises a first transmission end, a second transmission end, and a gate input. The first transmission end is operatively coupled to a first input of the first cross coupled inverter. The second transmission end is operatively coupled to a second input of the second cross coupled inverter. The gate input is operatively coupled to the control line input. Each cross coupled inverter is configured for switching a coupling of the sense current input and the reference current input.

Abstract: A dynamic comparator includes two sets of input transistors of opposite conductivity types, where a control electrode of one transistor of each set is coupled to a first input of the comparator and a control input of a second transistor of each set is coupled to a second input of the comparator. The comparator includes bypass transistors for pulling current electrodes of either the first set or second set of input transistors to a power supply terminal depending which input voltage is higher as determined by the output.

Abstract: A digital double-sampling (DDS) circuit includes a comparator with input nodes respectively connected to a ramp voltage and an image output node of a pixel circuit via a capacitor; a reset switch connected between the input nodes for resetting the capacitor; an analog-to-digital converter (ADC) coupled to receive a comparison output of the comparator, the ADC including a counter that counts while the ramp voltage is ramping, thereby generating a reset-ADC value in a reset phase and generating a signal-ADC value in a signal phase; a subtractor that subtracts the reset-ADC value from the signal-ADC value, thereby resulting in a difference value representing a sampled output; and a clamp circuit that generates a clamp voltage at the image output node. In the reset phase, the clamp circuit is disabled after the capacitor finishes resetting but before the ramp voltage begins ramping.

Abstract: The present provides a sensing circuit, a set of pre-amplifiers, and an operating method thereof. The set of pre-amplifiers includes a first pre-amplifier and a second pre-amplifier. The first pre-amplifier is coupled to a first input terminal of the sense amplifier. The second pre-amplifier is coupled to a second input terminal of the sense amplifier. The first pre-amplifier and the second pre-amplifier respectively performs a discharging operation to discharge the first input terminal and the second input terminal of the sense amplifier after the first input terminal and the second input terminal of the sense amplifier are charged to a predetermined voltage. One of the first pre-amplifier and the second pre-amplifier amplifies a voltage difference between the first input terminal and the second input terminal of the sense amplifier by terminating the discharging operation of another of the first pre-amplifier and the second pre-amplifier.

Abstract: Systems and methods for high speed communications are described herein. In certain aspects, the systems and methods include innovative transceiver architectures and techniques for re-timing, multiplexing, de-multiplexing and transmitting data. The systems and methods can be used to achieve reliable high-speed point-to-point communication between different electronic devices, computing devices, storage devices and peripheral devices.

Abstract: An SRAM includes an SRAM array including a plurality of SRAM cells arranged in a matrix. Each of the SRAM cells includes six vertical field effect transistors. The SRAM array includes a plurality of groups of conductive regions extending in the column direction. Each of the plurality of groups of conductive regions includes a first to a fourth conductive region arranged in this order in the row direction, and the first to fourth conductive regions are separated by insulating regions from each other. The first, second and third conductive regions are coupled to sources of first conductive type VFETs, and the fourth conductive region is coupled to sources of second conductive type VFETs. The plurality of groups are arranged in the row direction such that the fourth conductive region of one group of conductive regions is adjacent to the first conductive region of adjacent one group of conductive regions.

Abstract: A circuit to sample an input signal in an asynchronous clock domain. The apparatus includes a first latch configured to favor resolving to a logical high level and a second latch configured to favor resolving to a logical low level. The circuit includes a pullup pMOSFET, and first and second pMOSFETs. The first pMOSFET has a source terminal coupled to the drain terminal of the pullup pMOSFET, a gate coupled to a first input port of the first latch, and a drain terminal coupled to a second output port of the second latch. The second pMOSFET has a source terminal coupled to the drain terminal of the pullup pMOSFET, a gate coupled to the second output port of the second latch, and a drain terminal coupled to the first input port of the first latch.

Abstract: In accordance with an embodiment, an adjustable capacitance circuit comprising a first branch comprising plurality of transistors having load paths coupled in series with a first capacitor. A method of operating the adjustable capacitance circuit includes programming a capacitance by selectively turning-on and turning-off ones of the plurality of transistors, wherein the load path of each transistor of the plurality of transistors is resistive when the transistor is on and is capacitive when the transistor is off.

Abstract: An apparatus is provided which comprises: a first power gate transistor coupled to an ungated power supply node and a gated power supply node, the first power gate transistor having a gate terminal controllable by a first logic; and a second power gate coupled to the ungated power supply node and the gated power supply node, the second power gate transistor having a gate terminal controllable by a second logic, wherein the first power gate transistor is larger than the second power gate transistor, and wherein the second logic is operable to: weakly turn on the second power gate, fully turn on the second power gate, turn off the second power gate, and connecting the second power gate as diode.

Abstract: A sense amplifier of a semiconductor device is disclosed. The sense amplifier of a semiconductor device may include a PMOS latch transistor and an NMOS latch transistor formed in a cross-coupled latch type, and may be configured to sense and amplify a signal of a pair of bit lines. The sense amplifier of a semiconductor device may include a Yi transistor configured to output a data signal amplified by the PMOS latch transistor and the NMOS latch transistor according to a column control signal, and may share a well region with the PMOS latch transistor.

Abstract: A current sense amplifier is provided comprising a reference current input terminal, a control line input terminal, a sense current input terminal and a first output terminal. The amplifier further comprises a first NAND gate comprising first and second gate input terminals, and a second output terminal being coupled to the first output terminal of the amplifier. The amplifier also comprises two cross coupled inverters each comprising an n-FET, an n-FET input terminal, and each n-FET having a respective source. The amplifier further comprises a transmission gate comprising two transmission terminals and a gate terminal. The gate terminal is coupled to the control line terminal.

Abstract: A sense amplifier (SA) and a method for operating the SA are provided. The SA includes a first differential pair of transistors configured to receive a first differential input, a second differential pair of transistors configured to receive a second differential input, and a current source configured to source a current to flow through the first and second differential pairs of transistors. The method includes receiving by a first differential pair of transistors a first differential input, receiving by a second differential pair of transistors a second differential input, and flowing a current through the first and second differential pairs of transistors. A multi-bank memory is provided. The memory includes a first bank of memory cells and a second bank of memory cells sharing the disclosed SA.

Abstract: A comparator comprises a differential input stage comprising a first n-type transistor and a second n-type transistor, an output stage coupled to the differential input stage, a clock transistor coupled to the differential input stage and a pre-charge apparatus connected in parallel with the clock transistor.

Abstract: A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.

Abstract: A buffer circuit includes a power supply voltage detection block which may detect a voltage level of a power supply voltage, a bias generation block which may generate a constant bias signal and a plurality of enable bias signals based on the detection result of the power supply voltage, and an input buffer which may amplify an input signal in response to the constant bias signal and the plurality of enable bias signals.

Abstract: A bit-line sense amplifier may include a pull-up driving circuit, a pull-down driving circuit and a latch-type sense amplifier. The pull-up driving circuit including a plurality of PMOS transistors connected between a power supply voltage line and a first driving power supply line, and may be configured to provide a first driving current on the first driving power supply line in response to an up control signal. The pull-down driving circuit may be configured to provide a second driving current on a second driving power supply line in response to a down control signal. The latch-type sense amplifier may be connected between the first driving power supply line and the second driving power supply line, and may be configured to sense and amplify a voltage difference between a bit line and a complementary bit line.

Abstract: A sense amplifier is provided with a pair of first pull-up transistors that are configured to charge a corresponding pair of output terminals while a delayed sense enable signal is not asserted and to stop charging the corresponding pair of output terminals while the delayed sense enable signal is asserted.

Abstract: Embodiments of disclosed configurations include a circuit and system for a sense amplifier having a sensing circuit changing an output voltage at an output node based on a time that is defined by the output voltage reaching a threshold voltage level. The sensing circuit changes the output voltage at the output node before the time. In addition, a regeneration circuit amplifies the changed output voltage at the time. The sense amplifier offers sufficient voltage headroom to improve operation speed and power efficiency.

Abstract: In one well bias arrangement, no well bias voltage is applied to the n-well, and no well bias voltage is applied to the p-well. Because no external well bias voltage is applied, the n-well and the p-well are floating, even during operation of the devices in the n-well and the p-well. In another well bias arrangement, the lowest available voltage is not applied to the p-well, such as a ground voltage, or the voltage applied to the n+-doped source region of the n-type transistor in the p-well. This occurs even during operation of the n-type transistor in the p-well. In yet another well bias arrangement, the highest available voltage is not applied to the n-well, such as a supply voltage, or the voltage applied to the p+-doped source region of the p-type transistor in the n-well. This occurs even during operation of the p-type transistor in the n-well.

Abstract: A circuit includes a voltage-to-current converter receives a first voltage and a second voltage and outputs a first current and a second current in accordance with a clock signal. A first self-gated cascode circuit receives the first current and outputs a third current in accordance with the clock signal. A second self-gated cascode circuit receives the second current and outputs a fourth current in accordance with the clock signal. A latch circuit receives the third current and the fourth current and establishes a third voltage and a fourth voltage representing a resolution of a comparison between the third current and the fourth current, wherein the first self-gated cascode circuit is conditionally shut off based on a level of the third voltage, and the second self-gated cascode circuit is conditionally shut off based on a level of the fourth voltage.

Abstract: A current mode logic latch may include a sample stage and a hold stage, the hold stage comprising first and second stage transistors, first and second hold stage current sources, and a hold stage switch. The first hold stage transistor may be coupled at its drain terminal to the drain terminal of a first sample stage transistor. The second hold stage transistor may be coupled at its drain terminal to the drain terminal of a second sample stage transistor, coupled at its gate terminal to the drain terminal of the first hold stage transistor, and coupled at its drain terminal to a gate terminal of the first hold stage transistor. The first hold stage current source may be coupled to a source terminal of the first hold stage transistor. The second hold stage current source may be coupled to a source terminal of the second hold stage transistor. The hold stage switch may be coupled between the source terminal of the first hold stage transistor and the source terminal of the second hold stage transistor.

Abstract: Embodiments relate to a single multi-output high-voltage (HV) switch configured to pass multiple HV signals in semiconductor integrated circuits, such as a memory device. By utilizing a single HV switch that shares multiple components, area is reduced and fewer numbers of transistor devices are used to reduce cost. The shared components are selected such that the HV switch configuration provides functionality similar to traditional multiple HV switch configurations. Specifically, common logic shared across different branches of the single HV switch enables the single HV switch to provide multiple HV signals.

Abstract: Described herein are an apparatus, system, and method for compensating voltage swing and duty cycle of a signal on an input-output (I/O) pad of a processor by adjusting the voltage swing and duty cycle of the signal. The apparatus comprises a driver to transmit a signal on an I/O pad, the signal on the I/O pad having a voltage swing and a duty cycle; and an adjustment unit, coupled to the driver, to receive the signal from the I/O pad transmitted by the driver and to generate voltage swing and duty cycle control signals for adjusting the voltage swing and duty cycle of the signal on the I/O pad respectively. Described herein is also an analog-to-digital (A2D) converter for measuring and/or calibrating various signal attributes including current, voltage, and time.

Abstract: A current mode logic latch may include a sample stage and a hold stage, the hold stage comprising first and second stage transistors, first and second hold stage current sources, and a hold stage switch. The first hold stage transistor may be coupled at its drain terminal to the drain terminal of a first sample stage transistor. The second hold stage transistor may be coupled at its drain terminal to the drain terminal of a second sample stage transistor, coupled at its gate terminal to the drain terminal of the first hold stage transistor, and coupled at its drain terminal to a gate terminal of the first hold stage transistor. The first hold stage current source may be coupled to a source terminal of the first hold stage transistor. The second hold stage current source may be coupled to a source terminal of the second hold stage transistor. The hold stage switch may be coupled between the source terminal of the first hold stage transistor and the source terminal of the second hold stage transistor.

Abstract: Embodiments of the present invention provide a comparator and an analog-to-digital converter. A sampling module, a pre-amplifying module, and a coupling module in the comparator obtain a third differential voltage signal according to a positive input signal and a negative reference signal, and obtain a fourth differential voltage signal according to a negative input signal and a positive reference signal. A latch that is in the comparator and formed by a first P-type field effect transistor, a second P-type field effect transistor, a third field effect transistor, a fourth field effect transistor, a first switch, and a second switch is directly cross-coupled through gates, and directly collects the third differential voltage signal and the fourth differential voltage signal to the gates, so as to drive the latch to start positive feedback.