Abstract: Disclosed herein is a device that includes a bias line to which a bias current flows, a switch circuit controlling an amount of the bias current based on a control signal, a control line to which the control signal is supplied, and a cancellation circuit substantially cancelling a potential fluctuation of the bias line caused by changing the control signal, the potential fluctuation propagating via a parasitic capacitance between the control line and the bias line.

Abstract: The disclosure provides a clamp circuit and a method for clamping voltage. The clamp circuit includes: a first switch control unit, connected with the high-potential terminal of the first stage output of a comparator and configured to clamp the voltage of the high-potential terminal to VGate1 when the voltage of the high-potential terminal is lower than a first pre-set value V1, and a second switch control unit, connected to the low-potential terminal of the first stage output of the comparator and configured to clamp the voltage of the low-potential terminal to VGate2 when the voltage of the low-potential terminal is higher than a second pre-set value V2, wherein the voltages of the first stage output of the comparator are between VGND and VCC. By the disclosure, the output voltage swings of the first stage of the comparator are limited, and thereby the processing speed of the comparator is improved.

Abstract: According to one embodiment, a resistance change memory includes the following configuration. A first inverter includes first input and first output terminals and first and second voltage terminals. A second inverter includes second input and second output terminals and third and fourth voltage terminals. The second input terminal is connected to the first output terminal. The second output terminal is connected to the first input terminal. First and second transistors are connected to the first and second output terminals, respectively. Third and fourth transistors are connected to the first and third voltage terminals, respectively. A fifth transistor is connected between the first voltage terminal and the first memory cell. A sixth transistor is connected to the third voltage terminal. A controller turns on the first and second transistors, after turning off the fifth and sixth transistors.

Abstract: A memory device includes a memory cell, a sensing circuit connected to sense data stored in a memory cell and to connect the memory cell by first and second paths separate from one another A sample and hold circuit connected between the memory cell and the sensing circuit may separate a period during which voltages of the first and second paths are developed by the data stored in the memory cell from a period during which the sensing circuit senses the data stored in the memory cell by detecting the developed voltages of the first and second paths.

Abstract: According to various embodiments, a write control circuit configured to control writing to a memory cell by applying a writing current to the memory cell may be provided. The write control circuit may include: a current application circuit configured to apply the writing current to the memory cell; a determination circuit configured to determine whether writing to the memory cell is finished; and a stop writing circuit configured to cut off the writing current from the memory cell if it is determined that writing to the memory cell is finished.

Abstract: Transistors are connected to ground outside of an SRAM array column. One transistor is connected from VSS to ground on the Q side of an SRAM cell. Another transistor is connected from VSS to ground on the Q? (Q complement) side of an SRAM cell. Each transistor is gated by is complementary bit line. The Q side transistor is gated by the BL? (bit line complement, or “BLC”) line, and the Q? side is gated by the BL line. The ground of the complement side is disconnected during a write operation to increase the performance of a state change during a write operation where a logical one is written to the Q node, thus improving write margin.

Abstract: Methods and apparatus are provided for reading a selected memory cell of a memory array using a sense amplifier that includes a first capacitor and a second capacitor. The selected memory cell is coupled to a bit line and a selected word line. A first noise voltage is generated on the first capacitor, and a selected memory cell voltage and a second noise voltage are generated on the second capacitor. The first noise voltage is an estimate of the second noise voltage. An output signal value is generated proportional to a difference between the selected memory cell voltage and a reference voltage, and a difference between the first noise voltage and second noise voltage. The output signal value is used to determine a data value for the selected memory cell.

Abstract: A method includes coupling, by using a switching circuit, a first node to a bulk node of an input/output (IO) circuit of a memory circuit when the IO circuit operates in an active mode. The first node is configured to carry a first voltage level sufficient to cause a set of transistors of the IO circuit to have a first threshold voltage. A second node is coupled to the bulk node by using the switching circuit when the IO circuit operates in an inactive mode. The second node is configured to carry a second voltage level sufficient to cause the set of transistors of the IO circuit to have a second threshold voltage, and an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage.

Abstract: A circuit with current-controlled frequency implements a node (2) with an electrical charge which alternatively increases and decreases between two thresholds. The slew rate of the node can be adjusted using a tunable current source (1), thereby enabling tuning of a switching delay. The circuit may be used for controlling the switching frequency of a switch-mode power supply.

Abstract: Various aspects are directed to providing an output/state based upon an input value. Consistent with one or more embodiments, an apparatus includes a bias circuit that is connected between power and common rails and includes first and second current paths that provide first and second reference currents. A current-mirroring circuit provides a first mirrored current in response to a voltage input transitioning in a first direction between voltage levels, and a second mirrored current in response to a voltage input transitioning in an opposite direction. A logic circuit operates in a first state based upon the first mirrored current and the first reference current, and operates in a second state based upon the second mirrored current and the second reference current.

Abstract: A circuit implementing a soft logical processing network includes an interconnection of analog processing elements, which can include soft logic gates, for instance soft Equals gates and soft XOR gates. In some examples, each of the soft logic gates include multiple circuit parts, with each part including an input configured to accept a voltage signal representation of a soft logical quantity, and a conversion section configured to use the accepted voltage representation to form a corresponding current signal. The current signals are combined to form a signal representation of the output of the gate.

Abstract: The present disclosure relates to a differential sense amplifier comprising first and second cross-coupled inverters with first and second complimentary storage nodes. A first current control element changes a current through the first cross-coupled inverter based upon an output of a second cross-coupled inverter, and a second current control element changes a current through the second cross-coupled inverter based upon an output of the first cross-coupled inverter. Other devices and methods are also disclosed.

Abstract: A high-speed low-power latch includes three sets of transistors. A first set of transistors selects a tracking mode or a holding mode for the latch based on a clock signal having non-rail-to-rail or rail-to-rail voltage swing. A second set of transistors captures a data value based on an input signal and provides an output signal during the tracking mode. A third set of transistors stores the data value and provides the output signal during the holding mode. The input and output signals have rail-to-rail voltage swing. In another aspect, a signal generator includes at least one latch and a control circuit. The latch(es) receive a clock signal and generate an output signal. The control circuit senses a duty cycle of a feedback signal derived from the output signal and generates a control signal to adjust operation of the latch(es) to obtain 50% duty cycle for the feedback signal.

Abstract: An open loop envelope tracking system calibration technique and circuitry are proposed. A radio frequency power amplifier receives a modulated signal. An envelope tracker power converter generates a modulated power amplifier supply voltage for the radio frequency power amplifier based on a control signal derived from the modulated signal. A first output power and a second output power of the radio frequency power amplifier are measured when the control signal is respectively delayed by a first delay period and a second delay period. A sensitivity of the output power of the radio frequency power amplifier is near a maximum near the first delay period and the second delay period. The first delay period and/or the second delay period are adjusted until the first output power substantially equals the second output power. The first delay period and the second delay period are used to obtain a calibrated fine tuning delay offset.

Abstract: A comparator has a differential pair circuit and a current control circuit. The differential pair circuit has first and second comparator transistors, and is arranged to compare a first input and a second input according to a clock signal to generate a result indicating whether a difference of the first and second inputs exceeds an internal offset. The current control circuit is coupled in series with the differential pair circuit, and configured to provide unequal abilities of drawing currents for the first and second comparator transistors. An amplifier circuit is also disclosed, having a differential pair circuit, a current control circuit, an amplification circuit and a reset circuit.

Abstract: A sense amplifier is provided. The sense amplifier comprises a first and second cross-coupled transistor pairs, a first and second current sources, a first digital input transistor, and a second digital input transistor. The first and second ends of the first cross-coupled transistor pair are coupled to an operating voltage, the first and second back gate ends of the first cross-coupled transistor pair are coupled to a first and second output ends respectively. The first and second back gate ends of the first cross-coupled transistor pair are coupled to a first and second output ends respectively, and the first and second ends of the first cross-coupled transistor pair are coupled to a first digital input end and second digital input end respectively.

Abstract: A sense amplifier system and sensing method thereof are provided. The proposed sense amplifier system includes plural sense amplifiers, each of which includes a first switch having a first terminal, a second terminal, and a bulk terminal electrically connected to the first terminal, a second switch having a first terminal electrically connected to the second terminal of the first switch, a second terminal, and a bulk terminal, a third switch having a first terminal electrically connected to the first terminal of the second switch, a second terminal, and a bulk terminal electrically connected to the bulk terminal of the second switch, and a fourth switch having a first terminal electrically connected to the bulk terminal of the first switch and a second terminal electrically connected to the bulk terminal of the third switch.

Abstract: Provided is a sensor circuit which can amplify a sensor signal at high speed and with a high amplification factor without increasing the current consumption. The sensor circuit includes a primary amplifier for amplifying in advance a differential output signal which is a current signal of a sensor element, a secondary amplifier for amplifying the amplified differential output signal, a constant voltage generating circuit for maintaining a sensor element driving current to be constant, and a feedback circuit for feeding back a feedback signal to adjust an amplification factor. Most of the currents which pass through the primary amplifier are bias currents of the sensor element.

Abstract: An input/output sense amplifier includes: a data input unit configured to amplify data using a driving voltage and to output the amplified data, and a latch unit configured to latch and output an output signal of the data input unit to an output terminal.

Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive reduced-swing and high bandwidth inputs to provide “buffered” output signals having symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two differential amplifier pair stages (i.e., 4 total differential amplifiers). The first stage of differential amplifiers convert the single-ended input signal to a full-differential signal, which is converted back to a single-ended output signal by the second stage of differential amplifiers. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross coupled” structure. Various current saving and biasing methods may also be employed to keep operating current the same or lower than previous designs.

Abstract: A sense amplifier having a negative capacitance circuit receives differential input signals via a pair of data lines, and senses and amplifies a voltage difference between differential output signals corresponding to the differential input signals as loaded by the negative capacitance circuit using a differential-to-single-ended amplifier to generate a corresponding data output signal.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

Abstract: A sensing amplifier using capacitive coupling and a dynamic reference voltage, where the sensing amplifier circuit includes a bit line, configured to receive charging and discharging signals; a sensing amplifier, connected to the bit line and configured to receive the bit line and a reference voltage for comparison and configured to enlarge the voltage difference between a high point and a low point; and a reference voltage generator, connected to the sensing amplifier to generate the reference voltage required for the sensing amplifier to compare. The sensing amplifier effectively enhances sensing margin of the sensing amplifier circuit; and in addition, to accelerate the access speed, the sensing amplifier can easily determine the correct stored data and further quickly solve the problems of high-speed storing the data by the storage units.

Abstract: A method and device for signal detection is disclosed. At least one detection period is predefined for detecting a signal of a signal source, a differential signal of a pair of signal sources, or a dual-differential signal of three signal sources during at least one clock cycle.

Abstract: A system for communicating data comprises a clock channel configured to transmit a clock signal at a predetermined rate and at least one data channel configured to transmit data as a sequence of blocks of multi-level symbols being sent at a fixed multiple of the clock rate. Each block of multi-level symbols comprises a sequence of at least three multi-level symbols. Each multi-level symbol has an analog voltage level selected from a predetermined number of possible values, the predetermined number being an integer greater than two. The fixed multiple of the clock rate is an integer greater than one.

Abstract: An input/output sense amplifier is configured to amplify data inputted through a pair of local transmission lines in response to a sense amplifier enable signal and a test mode signal, output the data through a global transmission line, generate a control signal by sensing whether the data have been amplified, and halt amplification of the data in response to the control signal when amplification is completed.

Abstract: A control signal generation circuit includes a voltage detection unit which detects a level of an external voltage and generates first and second detection signals and a control signal control unit which delays a sense amplifier enable signal in response to the first and second detection signals and generates first through third control signals. The enable period of the first and second control signals are controlled based on the levels of the first and second detection signals.

Abstract: A semiconductor device includes a differential input unit configured to generate internal differential signals based on external differential signals by using a first level voltage, a signal conversion unit configured to generate an internal synchronization signal based on the internal differential signals in response termination control signals by using a second level voltage, and a duty correction unit configured to correct duty of the internal synchronization signal by using the second level voltage.

Abstract: Memories, current mode sense amplifiers, and methods for operating the same are disclosed, including a current mode sense amplifier including cross-coupled p-channel transistors and a load circuit coupled to the cross-coupled p-channel transistors. The load circuit is configured to provide a resistance to control at least in part the loop gain of the current mode sense amplifier, the load circuit including at least passive resistance.

Abstract: A latch comparator device includes a differential input amplifier coupled between a first system voltage and a second system voltage and including a first differential output signal terminal and a second differential output signal terminal, a latch coupled to a third system voltage including a first latch signal terminal and a second latch signal terminal, a switch module including a first switch device and a second switch device, wherein the first switch device is coupled between the first differential output signal terminal and the second latch signal terminal and the second switch device is coupled between the second differential output signal terminal and the first latch signal terminal, and a third switch device is coupled between the latch and a fourth system voltage.

Abstract: A sense amplifier circuit includes a first transistor and a second transistor of a first type, a first transistor and a second transistor of a second type, a first resistive device, and a second resistive device. A first end of the first resistive device is coupled to a first data line. A second end of the first resistive device is coupled to a drain of the first transistor of the second type and a gate of the second transistor of the first type. A first end of the second resistive device is coupled to a second data line. A second end of the second resistive device is coupled to a drain of the second transistor of the second type and a gate of the first transistor of the first type.

Abstract: An integrated circuit includes a memory cell and a sense amplifier coupled to the memory cell via a first bit line and a second bit line. The sense amplifier includes first and second inverters cross-coupled to provide a latch. The first inverter is responsive to a first data signal provided by the memory cell over the first bit line. The second inverter is responsive to a second data signal as provided by the memory cell over the second bit line. A first negative bias temperature instability (NBTI) compensation transistor includes a source electrode coupled to receive a reference voltage, a drain electrode coupled to a source electrode of the first inverter, and a gate electrode coupled to first logic responsive to the first data signal.

Abstract: An electronic circuit includes a differential input section, a current mirror section, an operational amplifier, an inverter, and a compensation voltage generator. The differential input section and the current mirror section are coupled together, forming a first common drain node and a second common drain node. The current mirror section has two p-type transistors coupled together at a common gate node. The operational amplifier has a positive input coupled to the first common drain node, a negative input coupled to the compensation voltage generator, and an output coupled to the common gate node. The inverter has an input node coupled to the second common drain node. The compensation voltage generator provides a compensation voltage to replicate a switching threshold voltage of the inverter.

Abstract: A signal operating circuit includes: a loading device, having a loading value, wherein the loading value is deviated from a predetermined loading value by a loading deviation value; an input stage coupled to the loading device, for converting an input signal into an output signal according to a controlling signal; a latching stage coupled to the loading device and the input stage for latching the output signal according to the controlling signal; and a controlling circuit coupled to the latching stage for adjusting an operating current flowing through the latching stage and an operating current flowing through the input stage to compensate the loading deviation value according to the loading deviation value of the loading device.

Abstract: A single stage current sense amplifier is described that generates a differential output that is proportional to a current through a sense resistor. The voltage across the sense resistor is Vsense. The current sense amplifier includes a differential transconductance amplifier having high impedance input terminals. An on-chip RC filter filters transients in the Vsense signal. A feedback circuit for each leg of the amplifier causes a pair of input transistors to conduct a fixed constant current irrespective of Vsense, which stabilizes the transconductance. A gain control resistor (Re) is coupled across terminals of the pair of input transistors and has Vsense across it. The current through the gain control resistor is therefore Vsensex1/Re. A level shifting circuit coupled to each of the input transistors lowers a common mode voltage at an output of the amplifier. Chopper circuits at the input and output cancel any offset voltages.

Abstract: An apparatus for comparing differential input signal inputs is provided. The apparatus comprises a CMOS sense amplifier (which has having a first input terminal, a second input terminal, a first output terminal, and a second output terminal), a first output circuit (which has a first load capacitance), a second output circuit (which has a second load capacitance), and an isolation circuit. The isolation circuit is coupled between the first output terminal of the CMOS sense amplifier and the first output circuit and is coupled between the second output terminal of the CMOS sense amplifier and the second output terminal of the CMOS sense amplifier. The isolation circuit isolates the first and second load capacitances from the CMOS sense amplifier.

Abstract: Sense amplifiers and methods for precharging are disclosed, including a sense amplifier having a pair of cross-coupled complementary transistor inverters, and a pair of transistors, each one of the pair of transistors coupled to a respective one of the complementary transistor inverters and a voltage. The sense amplifier further includes a capacitance coupled between the pair of transistors. One method for precharging includes coupling input nodes of the sense amplifier to a precharge voltage, coupling the input nodes of the sense amplifier together, and coupling a resistance to each transistor of a cross-coupled pair to set a voltage threshold (VT) mismatch compensation voltage for each transistor. The voltage difference between the VT mismatch compensation voltage of each transistor is stored.

Abstract: Systems and methods for driving an optical modulator are provided. In one embodiment, a modulation drive circuit comprises: a balanced impedance network having a first and a second output generated from a first input, and a third and a fourth output generated from a second input, wherein the first and second outputs are balanced with one another, and the third and fourth outputs are balanced with one another; a first differential amplifier, wherein an inverting input of the first differential amplifier couples to the first output of the distribution network and a non-inverting input of the first differential amplifier couples to the third output of the distribution network; and a second differential amplifier, wherein an inverting input of the second differential amplifier couples to the fourth output of the distribution network and a non-inverting input of the second differential amplifier couples to the second output of the distribution network.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

Abstract: A CMOS latch-type sense amplifying circuit is disclosed. The circuit comprises a CMOS differential amplifier configured to amplify a voltage signal of an input line pair to generate a first amplified voltage signal pair, and provide the first amplified voltage signal pair to an output line pair, a first pre-charge voltage having a first voltage level being applied to the input line pair. The circuit further comprises a CMOS latch-type sense amplifier configured to amplify a voltage signal of the output line pair to generate a second amplified voltage signal pair, and provide the second amplified voltage signal pair to the output line pair. The circuit additionally comprises a first common node controlled by a first common enable signal and connected to both the CMOS differential amplifier and the CMOS latch-type sense amplifier, such that the first common enable signal controls both the CMOS differential amplifier and the CMOS latch-type sense amplifier.

Abstract: Sense amplifier-type latch circuits are provided which employ static bias currents for enhancing operating frequency. For example, a sense amplifier-type latch circuit includes a latch circuit that captures and stores data during an evaluation phase of the sense amplifier-type latch circuit, and outputs the stored data to differential output nodes. An input differential transistor pair has drains connected to the latch circuit and sources commonly connected to a coupled source node. A static bias current circuit is connected to the coupled source node to provide a static bias current which flows through the differential transistor pair and cross-coupled inverters of the latch during a precharge phase. A switch device, which is connected to the coupled source node, is turned off during the precharge phase and turned on during the evaluation phase by operation of a clock signal to increase current flow through the differential transistor pair.

Abstract: Determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a second input of the sense amplifier during the first portion. A plurality of NAND string modules are connected to a global bit line of a memory device that includes a memory column where a plurality of NAND strings and a buffer are formed.

Abstract: A low-offset current-sense amplifier and an operating method thereof are disclosed. The low-offset current-sense amplifier includes a sense amplifier, a first current supply unit, a second current supply unit, and a processing unit. The first current supply unit is coupled to the sense amplifier, and includes a first transistor group and a first current output terminal. The second current supply unit is coupled to the sense amplifier, and includes a second transistor group and a second current output terminal. The processing unit controls the on/off of some transistors of the first transistor group and the second transistor group according to electric currents output from the first current output terminal and the second current output terminal, respectively.

Abstract: An input/output circuit has a first load having one end coupled to a first standard voltage line, a first MOS transistor having a drain electrode coupled to another end of the first load, a second load having one end coupled to the first standard voltage line, a second MOS transistor having a drain electrode coupled to another end of the second load, a third MOS transistor having a source electrode each of which is coupled to source electrodes of the first and second MOS transistors, a first constant-current source coupled between the source electrode of the first MOS transistor and a second standard voltage line, and a second constant-current source coupled between the source electrode of the second MOS transistor and the second standard voltage line. The circuit size is reduced by transmitting a differential signal or a single-ended signal using a single input/output circuit.

Abstract: A time-interleaved track-and-hold circuit includes a clock generator adapted to receive a global sine-wave clock signal and to generate therefrom multiple square-wave output clock signals of different phases. The track-and-hold circuit includes a switching array operative in at least a track mode or a hold mode. The switching array includes multiple switch circuits, each switch circuit adapted to receive an analog input signal, a corresponding one of the output clock signals, and the global sine-wave clock signal. Each switch circuit is operative to utilize the corresponding one of the output clock signals during the track mode for tracking the analog input signal, and is operative during the hold mode to store the input signal sampled during the track mode as an output of the switch circuit and to utilize the global sine-wave clock signal during the hold mode for synchronizing sampling instants of the respective outputs of the switch circuits.

Abstract: A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.

Abstract: A receiver circuit of a semiconductor apparatus includes a first sense amplifier, a level restriction unit, and a second sense amplifier. The first sense amplifier amplifies an input signal in response to a clock signal and generates a first signal with a voltage swing between a first level and a second level. The level restriction unit receives the first signal and generates a correction signal with a voltage swing between the first level and a third level. The second sense amplifier amplifies the correction signal in response to the clock signal and generates a second signal with the voltage swing between the first level and the second level.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: Methods, systems, and devices are described for providing voltage comparison adapted to operate at high-speeds and over a relatively large range of supply voltages.

Abstract: A first sensing circuit has input terminals coupled to a true differential signal line and a complementary differential signal line. A second sensing circuit also has input terminals coupled to said true signal and said complementary signal. Each sensing circuit has a true signal sensing path and a complementary signal sensing path. The first sensing circuit has an imbalance that is biased towards the complementary signal sensing path, while the second sensing circuit has an imbalance that is biased towards the true signal sensing path. Outputs from the first and second sensing circuits are processed by a logic circuit producing an output signal that is indicative of whether there a sufficient differential signal for sensing has been developed between the true differential signal line and the complementary differential signal line.