Current And/or Voltage (e.g., Ballast Resistor) Patents (Class 338/20)
  • Patent number: 10490322
    Abstract: A green film composed of varistor material laminated on a ceramic main body, which is provided with metallizations on both sides, and is sintered to form a varistor layer. A terminating electrode pair completes the arrangement and allows the varistor layer to be operated as a varistor. The upper second electrode pair can serve directly as a terminal contact for mounting an electrical component.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: November 26, 2019
    Assignee: Epcos AG
    Inventors: Sebastian Brunner, Christian Faistauer, Günter Pudmich, Edmund Payr, Kurt Wiesbauer
  • Patent number: 10446300
    Abstract: An anti-surge structure built in switches includes three metal-oxide varistors disposed in an insulating body in stair-like arrangement. The metal-oxide varistors further has an insulating band surrounding a middle metal-oxide varistor and defining four isolated insulating areas within the insulating body, so as to avoid high voltage flashover and to protect the structure from external impacts. With the stair-like arrangement, each metal-oxide varistor has a connecting area for both ends of a metal strap to be welded thereon by low-temperature solder paste. When the low-temperature solder paste are melted by heat, a compressed spring element thereof is ejected to displace a pushing element thereof and to further detach two connecting points of the structure, so as to break a circuit connected by the structure.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: October 15, 2019
    Inventors: Yi-Hsiang Wang, I-Ying Wang
  • Patent number: 10320154
    Abstract: An ESD protection device includes a multilayer substrate, first and second discharge electrodes, and a discharge auxiliary electrode. Discharge portions of the first and second discharge electrodes are opposed to each other in a lamination direction of insulating layers with the discharge auxiliary electrode interposed between both the discharge portions. A cavity is provided within the multilayer substrate in at least one of a region positioned adjacent to or in a vicinity of the discharge portion of the first discharge electrode on an opposite side to the discharge auxiliary electrode and a region positioned adjacent to or in a vicinity of the discharge portion of the second discharge electrode on an opposite side to the discharge auxiliary electrode.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: June 11, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takeshi Miki
  • Patent number: 10262803
    Abstract: A multilayer chip capacitor includes electrodes comprised of numerous, closely spaced conductive layers interposed within a dielectric laminate. Adjacent conductive layers are essentially non-overlapping, so that fringe capacitance between opposing electrodes provides substantially all of the capacitance. The conductive layers may be shaped to form a non-planer boundary between electrodes. An additional high frequency integrated capacitor is formed from external electrode plates. The non-planar electrode boundary principle is also applied to discoidal capacitors in the form of a non-concentric electrode boundary.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: April 16, 2019
    Assignee: Presidio Components, Inc.
    Inventors: Hung Van Trinh, Alan Devoe
  • Patent number: 10211853
    Abstract: Example embodiments disclosed herein relate to a method of transmitting an audio signal and also a method of receiving an audio signal. The method of transmitting the audio signal includes: receiving the audio signal including a plurality of frames having a left and right subframes containing audio data of a first number of bits; encoding the left and right subframes into a parity code of a second number of bits; generating serial data by combining the parity code and the audio data; and transmitting the serial data over an audio transmission media having a bandwidth of a third number of bits, a sum of the first number of bits and the second number of bits being below the third number of bits. The method of receiving the audio signal includes: receiving a serial signal combining a parity code; decoding the serial signal by calculating a syndrome based on the parity code; detecting an error by comparing the syndrome with the audio data; and generating a corrected audio signal by correcting the detected error.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: February 19, 2019
    Assignee: Lattice Semiconductor Corporation
    Inventors: Jiong Huang, Alexander Peysakhovich, Lei Ming
  • Patent number: 10043602
    Abstract: To provide a chip resistor in which a resistive element can be surely protected from an external environment and which is also excellent in corrosion resistance, a chip resistor 1 is configured to include an insulating substrate 2, a pair of front electrode 3 provided on opposite end portions of a front surface of the insulating substrate 2, a pair of back electrodes 7 provided on opposite end portions of a back surface of the insulating substrate 2, a resistive element 4 provided to extend onto the two front electrodes 3, a first insulating layer 5 covering the resistive element 4, a second insulating layer 6 made of a resin material to cover the first insulating layer 5, end surface electrodes 8 establishing electrical continuity between the front electrodes 3 and the back electrodes 7, plating layers 9 covering the end surface electrodes 8, etc.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: August 7, 2018
    Assignee: KOA Corporation
    Inventor: Kentaro Matsumoto
  • Patent number: 10037838
    Abstract: A thermistor element satisfies 4?(d/ed) when a first distance is d, which is a shortest distance between a first internal electrode and a second external electrode, whereas a second distance is referred to as ed, which is a shortest distance between the first internal electrode and a fifth internal electrode, in a cross section of a body including an L direction and a T direction thereof.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: July 31, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shinichiro Nawai, Yuichi Hirata
  • Patent number: 9865399
    Abstract: An electronic component of a multi-layered structure includes a laminate formed by stacking a plurality of ceramic bodies and an external electrode made of a conductive resin for connecting each ceramic body.
    Type: Grant
    Filed: October 6, 2015
    Date of Patent: January 9, 2018
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sung Hun Cho, Chang Ho Lee, Won Sik Chong
  • Patent number: 9780146
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a line-type first electrode layer having at least one protrusion and extending in a first direction, and a plurality of memory elements, each memory element including a variable resistance layer and a second electrode, the variable resistance layers of the memory elements being disposed over a top surface and two parallel side surfaces of the protrusion, respectively, the two parallel side surfaces of the protrusion being arranged in the first direction, the second electrodes of the memory elements being disposed over the variable resistance layers of the memory elements, respectively.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: October 3, 2017
    Assignee: SK HYNIX INC.
    Inventor: Kyung-Wan Kim
  • Patent number: 9761356
    Abstract: A varistor device includes a main body, a conductive area, a specific-melting-point metallic pin, and an elastic unit. The main body has a first surface, and the conductive area is located at the first surface. The specific-melting-point metallic pin has a first section and a second section. The first section and the second section are one-piece formed. The first section is fixedly disposed on the conductive area. The second section has a specific melting point such that the second section melts when a current flows between the first surface and the second section so as to expose the second section to a temperature greater than the specific melting point. The elastic unit has an end connected to the second section, and the elastic unit provides an elastic force to the second section to break the second section so as to cut off the current when the second section melts.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: September 12, 2017
    Assignee: POWERTECH INDUSTRIAL CO., LTD.
    Inventor: Jung-Hui Hsu
  • Patent number: 9672964
    Abstract: The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi2O3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: June 6, 2017
    Assignee: ABB SCHWEIZ AG
    Inventors: Felix Greuter, Michael Hagemeister, Oliver Beck, Ragnar Osterlund, Reto Kessler
  • Patent number: 9601234
    Abstract: A method of making a three-dimensional porous device entails providing a substrate having a conductive pattern on a surface thereof, and depositing a colloidal solution comprising a plurality of microparticles onto the surface, where the microparticles assemble into a lattice structure. Interstices of the lattice structure are infiltrated with a conductive material, which propagates through the interstices in a direction away from the substrate to reach a predetermined thickness. The conductive material spans an area of the surface overlaid by the conductive pattern. The microparticles are removed to form voids in the conductive material, thereby forming a conductive porous structure having the predetermined thickness and a lateral size and shape defined by the conductive pattern.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: March 21, 2017
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: William P. King, Paul V. Braun, Zhenting Dai, Xindi Yu, Hui Gang Zhang
  • Patent number: 9420705
    Abstract: A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: August 16, 2016
    Assignee: CYNTEC CO., LTD.
    Inventors: Yi-Geng Li, Chung-Hsiung Wang, Hung-Ming Lin
  • Patent number: 9391274
    Abstract: The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: July 12, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Eun-mi Kim, Yuichi Otani, Takashi Nakagawa
  • Patent number: 9320135
    Abstract: Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: April 19, 2016
    Assignee: LITTELFUSE, INC.
    Inventors: Lex Kosowsky, Robert Fleming, Bhret Graydon, Daniel Vasquez
  • Patent number: 9299474
    Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: March 29, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Shinya Morita, Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Patent number: 9293242
    Abstract: Provided is a voltage detection circuit, which can remove influence of error voltage caused by tiny amount of self-inductance existing in a shunt resistor, though in the resistor for large current usage, which is impossible to surface-mount on a voltage detection circuit board. The shunt resistor device comprises: a resistance body (11); a pair of main electrode (12) for flowing current to be monitored through the resistance body; a pair of detection terminal (13a) for detecting voltage caused in the resistance body; and a pair of wiring (23) each electrically connected to the detection terminal. And, a pair of voltage detection wiring consisting of the detection terminal (13a) and the wiring (23) is brought closer, at prescribed location, than distance between each of connection position of the pair of the detection terminal (13a) on the main electrode (12).
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: March 22, 2016
    Assignee: KOA CORPORATION
    Inventors: Tadahiko Yoshioka, Koichi Hirasawa, Yoshinori Aruga
  • Patent number: 9269896
    Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: February 23, 2016
    Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLC
    Inventors: Yun Wang, Vidyut Gopal, Chien-Lan Hsueh
  • Patent number: 9246322
    Abstract: Aspects of the innovations herein relate to surge protection devices. Such surge protection devices may have an arrester. The arrester may produce an equalization between different potentials and arrest a surge current during use. A sensor may be provided on the arrester, said sensor generating an electric switch-off signal. A switching device may receive the switch-off signal and separate the arrester from an electric circuit, the switching device and arrester being arranged in a physically separate manner from each other.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: January 26, 2016
    Assignee: PHOENIX CONTACT GMBH & CO. KG
    Inventors: Joachim Schimanski, Martin Wetter, Gerhard Wolff
  • Patent number: 9147510
    Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. The overvoltage protection element includes an arrester between one terminal of the overvoltage protection element and the parallel connection of the two varistors.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: September 29, 2015
    Assignee: Phoenix Contact GmbH & Co. KG
    Inventors: Christian Depping, Christina Stohlmeyer, Joachim Wosgien, Philip Jungermann
  • Patent number: 9138381
    Abstract: Process for producing composite materials by reactive spray-drying, where a liquid phase A, which comprises inorganic cations, and a liquid phase B, which comprises anions which, with the inorganic cations, form a salt that is insoluble in the mixture of the liquid phases are sprayed together using at least one multi-substance nozzle, and where at least one hydrophobic active ingredient is present in dissolved form in at least one liquid spraying phase, and where the salt formed from the cations of phase A and the anions of phase B has a solubility of less than 0.02 mol/l in the neutral aqueous medium.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: September 22, 2015
    Assignee: BASF SE
    Inventors: Andreas Kempter, Max Siebert, Heidrun Debus
  • Patent number: 9099230
    Abstract: An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: August 4, 2015
    Assignee: STATE OF OREGON ACTING BY AND THROUGH THE STATE BOARD OF HIGHER EDUCATION ON BEHALF OF OREGON STATE UNIVESITY
    Inventor: E. William Cowell, III
  • Patent number: 9087623
    Abstract: A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO3.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: July 21, 2015
    Assignee: TDK CORPORATION
    Inventors: Takahiro Itami, Naoyoshi Yoshida, Kaname Ueda
  • Patent number: 9077174
    Abstract: The ESD protection device includes: opposed electrodes 2 including an opposed electrode 2a on one side and an opposed electrode 2b on the other side, and a discharge auxiliary electrode 3, the discharge auxiliary electrode being placed so as to extend from the opposed electrode on one side to the opposed electrode on the other side, wherein the discharge auxiliary electrode contains metal grains, semiconductor grains and a glass material, the metal grains, the semiconductor grains, and the metal grain and the semiconductor grain are bound together, respectively, via the glass material, the average grain size X of the metal grains is 1.0 ?m or more, and the relationship between the thickness Y of the discharge auxiliary electrode and the average grain size X of the metal grains satisfies the requirement of 0.5?Y/X?3.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: July 7, 2015
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kumiko Hiehata, Takahiro Sumi, Jun Adachi, Jun Urakawa, Takayuki Tsukizawa
  • Publication number: 20150145638
    Abstract: Provided are a multilayer chip ZnO varistor with base metal inner electrodes and a preparation method thereof. The varistor is formed by ceramic sheets and inner electrodes which were alternately laminated. Wherein the main material of inner electrodes is the base metal nickel(Ni), both ends of the varistor are coated with silver electrodes.
    Type: Application
    Filed: June 30, 2014
    Publication date: May 28, 2015
    Inventors: Qiuyun Fu, Dongxiang Zhou, Yunxiang Hu, Zhiping Zheng, Wei Luo, Tao Chen
  • Publication number: 20150145538
    Abstract: A circuit is provided, including a first resistor, a second resistor and a control unit. The second resistor may have an adjustable resistance. The control unit may be configured to adjust the second resistor to have a first resistance at which a voltage due to a first current flowing through the first resistor is equal to a voltage due to a second current flowing through the second resistor. The control unit may be further configured to adjust the second resistor to have a second resistance at which a voltage due to another first current different from the first current and flowing through the first resistor is equal to the voltage due to the second current flowing through the second resistor. The control unit may be still further configured to adjust the second resistor to have a third resistance based on at least a difference of the first resistance and the second resistance.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: Infineon Technologies AG
    Inventor: Steffen Thiele
  • Publication number: 20150123516
    Abstract: A method for producing a multilayer component (21) is specified, which involves providing a body having dielectric layers (3) arranged one above another and first and second electrically conductive layers (4, 84, 5, 85) arranged therebetween. The first conductive layers (4, 84) are connected to a first auxiliary electrode (6) and the second conductive layers (5, 85) are connected to a second auxiliary electrode (7). The body (1, 81) is introduced into a medium and a voltage is applied between the first and second auxiliary electrodes (6, 7) for producing a material removal. Furthermore, a multilayer component is specified, which has depressions (20) formed by an electrochemically controlled material removal.
    Type: Application
    Filed: June 6, 2013
    Publication date: May 7, 2015
    Inventors: Franz Rinner, Dieter Somitsch, Christoph Auer, Gerhard Fuchs
  • Publication number: 20150109093
    Abstract: With miniaturization of a variable resistance element, it is becoming difficult to suppress the adverse effect CMP or etching might have on the resistance variable element. There is proposed a variable resistance element comprising an insulation film and a lower electrode equipped with a first portion surrounded by the insulation film and a columnar-shaped second portion protruded upwards from the first portion beyond an upper surface of the insulation film. The variable resistance element also comprises a variable resistance film that covers a preset region of the insulation film, the present region including the lower electrode, and that is electrically connected to at least an upper surface of the second portion of the lower electrode. The variable resistance element further comprises an upper electrode that covers the variable resistance film and that is electrically connected to the variable resistance film.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 23, 2015
    Inventors: Naoya HIGANO, Yukio TAMAI, Suguru KAWABATA
  • Patent number: 8940193
    Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: January 27, 2015
    Assignee: Littelfuse, Inc.
    Inventors: Lex Kosowsky, Robert Fleming
  • Publication number: 20140375416
    Abstract: A detection signal receiving unit receives, via signal lines, a detection signal output from a position detector which is used in a motor control device. The resistance value of a termination resistor unit is changed to a resistance value determined depending on the type of the position detector in accordance with the received detection signal and the reference value determined depending on the type of the position detector.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventor: Kunio TSUCHIDA
  • Publication number: 20140375417
    Abstract: A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states.
    Type: Application
    Filed: February 6, 2013
    Publication date: December 25, 2014
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: You Zhou, Zheng Yang, Shriram Ramanathan
  • Publication number: 20140361864
    Abstract: To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.
    Type: Application
    Filed: August 27, 2013
    Publication date: December 11, 2014
    Inventors: Natsuki Fukuda, Kazunori Fukuju, Yutaka Nishioka, Koukou Suu
  • Publication number: 20140253283
    Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. The overvoltage protection element includes an arrester between one terminal of the overvoltage protection element and the parallel connection of the two varistors.
    Type: Application
    Filed: May 19, 2014
    Publication date: September 11, 2014
    Applicant: Phoenix Contact GmbH & Co. KG
    Inventors: Christian Depping, Christina Stohlmeyer, Joachim Wosgien, Phillip Jungermann
  • Patent number: 8816812
    Abstract: The purpose of the invention is to create such a varistor fuse element, which should within a single housing include both a varistor (1) as well as an electric fuse (2), wherein said varistor part i.e. a varistor (1) is intended to protect each electric installation against overvoltage impulses and consequently against current strokes, while the fuse (2) is capable to transmit the current stroke due to increased voltage and to interrupt each permanently increased electric current, which might occur due to defects on the varistor (1). Moreover, such varistor fuse should not exceed dimensions of already known and widely used protective means, in particular melting fuses. In accordance with the invention, the fuse (2) with its round tubular casing (20) and the varistor, which is also embedded within a round tubular casing (10), are serial interconnected and arranged coaxially within each other.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: August 26, 2014
    Assignee: ETI Elektroelement d.d.
    Inventor: Mitja Koprivsek
  • Publication number: 20140204503
    Abstract: An electrical device having at least one functional element that includes a ceramic body, on which a first electrical contact layer and a second electrical contact layer are applied to two opposite-lying side faces, respectively, and the functional element is arranged between a first contact strip and a second contact strip, wherein the first contact strip and the second contact strip comprise several contact pins, respectively, and wherein the first contact layer electrically contacts at least one contact pin of the first contact strip and the second contact layer electrically contacts at least one contact pin of the second contact strip.
    Type: Application
    Filed: July 4, 2012
    Publication date: July 24, 2014
    Applicant: EPCOS AG
    Inventors: Markus Ortner, Michael Schossmann, Markus Koini, Günter Engel, Christian Hoffmann
  • Patent number: 8779887
    Abstract: A resistor device includes a resistor plate and an electrode structure. The electrode structure includes an electrode layer and an auxiliary layer. The electrode layer is disposed at a first face of the resistor plate and includes a first portion and a second portion overlying a first side and a second side of the resistor plate, respectively, and a current path is conducted between the first portion and the second portion through the resistor plate. The auxiliary layer is disposed at a second face of the resistor plate and includes at least a first block and a second block overlying the first side of the resistor plate, and at least a third block overlying the second side of the resistor plate, wherein the first, second and third blocks of the auxiliary layer are separated from one another so that any current flow among the blocks is blocked.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: July 15, 2014
    Assignee: Cyntec Co., Ltd.
    Inventors: Ta-Wen Lo, Yen-Ting Lin
  • Patent number: 8766762
    Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. One housing half is designed as a cover, which has a covering section and a recessed engagement section.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: July 1, 2014
    Assignee: Phoenix Contact GmbH & Co. KG
    Inventors: Christian Depping, Christina Grewe, Joachim Wosgien, Philip Jungermann
  • Publication number: 20140125447
    Abstract: A resistance calibrating circuit includes an external power source; a reference unit, a current calibrating circuit and a voltage calibrating unit which are respectively connected to the external power source; an external reference voltage which is respectively connected to the reference unit and the voltage calibrating unit; an to-be-calibrated voltage-controlled resistor which is respectively connected to the current calibrating unit and the voltage calibrating unit, wherein the current calibrating unit is further connected to the reference unit. The resistance calibrating circuit is capable of automatically adjusting a resistance of the to-be-calibrated voltage-controlled resistor highly precisely and highly efficiently.
    Type: Application
    Filed: October 29, 2013
    Publication date: May 8, 2014
    Applicant: IPGoal Microelectronics (Sichuan) Co., Ltd.
    Inventor: Fangping Fan
  • Publication number: 20140111300
    Abstract: There is provided a method of manufacturing a multilayer ceramic electronic component including: preparing a ceramic body including internal electrodes; forming electrode layers including at least one conductive metal selected from a group consisting of copper (Cu), silver (Ag), palladium (Pd), and platinum (Pt), an alloy thereof, or a coating material and electrically connected to the internal electrodes on external surfaces of the ceramic body; forming nickel (Ni) layers on external surfaces of the electrode layers by a firing method; and forming tin (Sn) layers on external surfaces of the nickel (Ni) layers by a firing method.
    Type: Application
    Filed: December 31, 2012
    Publication date: April 24, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Myung Jun Park, Kyu Sik Park, Young Sook Lee, Jae Yeol Choi, Doo Young Kim
  • Publication number: 20140077923
    Abstract: Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 20, 2014
    Applicant: BOURNS, INC.
    Inventors: Gordon L. Bourns, Stelar Chu, Daniel E. Grindell, David Huang, John Kelly, Erik Meijer
  • Patent number: 8643462
    Abstract: A switch module applied for a power supply system is disclosed. The switch module comprises a power switch, an insulating member, a surge absorber and a pyrocondensation belt. The power switch is connected with the power supply system, the insulating member is set on the power switch, the surge absorber is electrically connected with the power switch and adjacent to the power switch, the pyrocondensation belt is connected with the surge absorber and the insulating member. The pyrocondensation belt shrinks with a temperature of the surge absorber. When the insulating member is in the initial state, the insulating member does not affect the power switch. The insulating member makes the power switch off when the shrinkage degree of the pyrocondensation belt develops enough to block the power switch from being on.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: February 4, 2014
    Assignee: Powertech Industrial Co., Ltd.
    Inventors: Yu-Lung Lee, Jung-Hui Hsu
  • Patent number: 8629751
    Abstract: A high-voltage surge arrester includes an electrically conductive first terminal and an electrically conductive second terminal longitudinally spaced from the first terminal. A plurality of metal oxide varistor (MOV) bars are included, each of which extends from the first terminal to the second terminal and electrically contacts the first terminal and the second terminal. A heat conducting material contacts the MOV bars.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: January 14, 2014
    Assignee: Tyco Electronics Corporation
    Inventors: Kathryn Marie Maher, Matthew Spalding
  • Publication number: 20130307662
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Application
    Filed: February 1, 2011
    Publication date: November 21, 2013
    Inventors: Minxian Max Yang, R. Stanley Williams
  • Patent number: 8570138
    Abstract: Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: October 29, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Dmitri Borisovich Strukov, Shih-Yuan Wang
  • Patent number: 8562871
    Abstract: A composition includes a filler dispersed in a polymeric matrix. The filler may be electrically conducting in a temperature range and may have a Curie temperature. The composition may have a trip temperature at which electrical resistance of the composition increases with increase in temperature, and the trip temperature of the composition may be determined by the Curie temperature of the filler. The filler may be present in the polymeric matrix in an amount determined by a property of one or both of the polymeric matrix or the filler. An associated method is provided.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: October 22, 2013
    Assignee: Sabic Innovative Plastics IP B.V.
    Inventors: Bhanu Bhusan Khatua, Sumanda Bandyopadhyay, Soumyadeb Ghosh, Hari Nadathur Seshadri, Franciscus Petrus Maria Mercx
  • Patent number: 8562859
    Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: October 22, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomoaki Kato, Iwao Kawamata, Yoshio Takada
  • Patent number: 8552831
    Abstract: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: October 8, 2013
    Assignee: TDK Corporation
    Inventors: Kaname Ueda, Katsunari Moriai, Takahiro Itami
  • Patent number: 8542086
    Abstract: Surface-mountable conductive polymer electronic devices include at least one conductive polymer active layer laminated between upper and lower electrodes. Upper and lower insulation layers, respectively, sandwich the upper and lower electrodes. First and second planar conductive terminals are formed on the lower insulation layer. First and second cross-conductors are provided by plated through-hole vias, whereby the cross-conductors connect each of the electrodes to one of the terminals. Certain embodiments include two or more active layers, arranged in a vertically-stacked configuration and electrically connected by the cross-conductors and electrodes in parallel. Several embodiments include at least one cross-conductor having a chamfered or beveled entry hole through the upper insulation layer to provide enhanced adhesion between the cross-conductor and the insulation layer. Several methods for manufacturing the present surface-mountable conductive polymer electronic devices are also provided.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: September 24, 2013
    Assignee: Bourns, Inc.
    Inventors: Gordon L. Bourns, Stelar Chu, Daniel E. Grindell, David Huang, John Kelly, Erik Meijer
  • Patent number: 8525634
    Abstract: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: September 3, 2013
    Assignee: TDK Corporation
    Inventors: Kaname Ueda, Katsunari Moriai, Takahiro Itami
  • Patent number: 8508325
    Abstract: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: August 13, 2013
    Assignee: TDK Corporation
    Inventors: Kaname Ueda, Katsunari Moriai, Takahiro Itami