Abstract: A circuit is provided, including a first resistor, a second resistor and a control unit. The second resistor may have an adjustable resistance. The control unit may be configured to adjust the second resistor to have a first resistance at which a voltage due to a first current flowing through the first resistor is equal to a voltage due to a second current flowing through the second resistor. The control unit may be further configured to adjust the second resistor to have a second resistance at which a voltage due to another first current different from the first current and flowing through the first resistor is equal to the voltage due to the second current flowing through the second resistor. The control unit may be still further configured to adjust the second resistor to have a third resistance based on at least a difference of the first resistance and the second resistance.

Abstract: Provided are a multilayer chip ZnO varistor with base metal inner electrodes and a preparation method thereof. The varistor is formed by ceramic sheets and inner electrodes which were alternately laminated. Wherein the main material of inner electrodes is the base metal nickel(Ni), both ends of the varistor are coated with silver electrodes.

Abstract: A method for producing a multilayer component (21) is specified, which involves providing a body having dielectric layers (3) arranged one above another and first and second electrically conductive layers (4, 84, 5, 85) arranged therebetween. The first conductive layers (4, 84) are connected to a first auxiliary electrode (6) and the second conductive layers (5, 85) are connected to a second auxiliary electrode (7). The body (1, 81) is introduced into a medium and a voltage is applied between the first and second auxiliary electrodes (6, 7) for producing a material removal. Furthermore, a multilayer component is specified, which has depressions (20) formed by an electrochemically controlled material removal.

Abstract: With miniaturization of a variable resistance element, it is becoming difficult to suppress the adverse effect CMP or etching might have on the resistance variable element. There is proposed a variable resistance element comprising an insulation film and a lower electrode equipped with a first portion surrounded by the insulation film and a columnar-shaped second portion protruded upwards from the first portion beyond an upper surface of the insulation film. The variable resistance element also comprises a variable resistance film that covers a preset region of the insulation film, the present region including the lower electrode, and that is electrically connected to at least an upper surface of the second portion of the lower electrode. The variable resistance element further comprises an upper electrode that covers the variable resistance film and that is electrically connected to the variable resistance film.

Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.

Abstract: A detection signal receiving unit receives, via signal lines, a detection signal output from a position detector which is used in a motor control device. The resistance value of a termination resistor unit is changed to a resistance value determined depending on the type of the position detector in accordance with the received detection signal and the reference value determined depending on the type of the position detector.

Abstract: A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states.

Abstract: To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. The overvoltage protection element includes an arrester between one terminal of the overvoltage protection element and the parallel connection of the two varistors.

Abstract: The purpose of the invention is to create such a varistor fuse element, which should within a single housing include both a varistor (1) as well as an electric fuse (2), wherein said varistor part i.e. a varistor (1) is intended to protect each electric installation against overvoltage impulses and consequently against current strokes, while the fuse (2) is capable to transmit the current stroke due to increased voltage and to interrupt each permanently increased electric current, which might occur due to defects on the varistor (1). Moreover, such varistor fuse should not exceed dimensions of already known and widely used protective means, in particular melting fuses. In accordance with the invention, the fuse (2) with its round tubular casing (20) and the varistor, which is also embedded within a round tubular casing (10), are serial interconnected and arranged coaxially within each other.

Abstract: An electrical device having at least one functional element that includes a ceramic body, on which a first electrical contact layer and a second electrical contact layer are applied to two opposite-lying side faces, respectively, and the functional element is arranged between a first contact strip and a second contact strip, wherein the first contact strip and the second contact strip comprise several contact pins, respectively, and wherein the first contact layer electrically contacts at least one contact pin of the first contact strip and the second contact layer electrically contacts at least one contact pin of the second contact strip.

Abstract: A resistor device includes a resistor plate and an electrode structure. The electrode structure includes an electrode layer and an auxiliary layer. The electrode layer is disposed at a first face of the resistor plate and includes a first portion and a second portion overlying a first side and a second side of the resistor plate, respectively, and a current path is conducted between the first portion and the second portion through the resistor plate. The auxiliary layer is disposed at a second face of the resistor plate and includes at least a first block and a second block overlying the first side of the resistor plate, and at least a third block overlying the second side of the resistor plate, wherein the first, second and third blocks of the auxiliary layer are separated from one another so that any current flow among the blocks is blocked.

Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. One housing half is designed as a cover, which has a covering section and a recessed engagement section.

Abstract: A resistance calibrating circuit includes an external power source; a reference unit, a current calibrating circuit and a voltage calibrating unit which are respectively connected to the external power source; an external reference voltage which is respectively connected to the reference unit and the voltage calibrating unit; an to-be-calibrated voltage-controlled resistor which is respectively connected to the current calibrating unit and the voltage calibrating unit, wherein the current calibrating unit is further connected to the reference unit. The resistance calibrating circuit is capable of automatically adjusting a resistance of the to-be-calibrated voltage-controlled resistor highly precisely and highly efficiently.

Abstract: There is provided a method of manufacturing a multilayer ceramic electronic component including: preparing a ceramic body including internal electrodes; forming electrode layers including at least one conductive metal selected from a group consisting of copper (Cu), silver (Ag), palladium (Pd), and platinum (Pt), an alloy thereof, or a coating material and electrically connected to the internal electrodes on external surfaces of the ceramic body; forming nickel (Ni) layers on external surfaces of the electrode layers by a firing method; and forming tin (Sn) layers on external surfaces of the nickel (Ni) layers by a firing method.

Abstract: Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress.

Abstract: A switch module applied for a power supply system is disclosed. The switch module comprises a power switch, an insulating member, a surge absorber and a pyrocondensation belt. The power switch is connected with the power supply system, the insulating member is set on the power switch, the surge absorber is electrically connected with the power switch and adjacent to the power switch, the pyrocondensation belt is connected with the surge absorber and the insulating member. The pyrocondensation belt shrinks with a temperature of the surge absorber. When the insulating member is in the initial state, the insulating member does not affect the power switch. The insulating member makes the power switch off when the shrinkage degree of the pyrocondensation belt develops enough to block the power switch from being on.

Abstract: A high-voltage surge arrester includes an electrically conductive first terminal and an electrically conductive second terminal longitudinally spaced from the first terminal. A plurality of metal oxide varistor (MOV) bars are included, each of which extends from the first terminal to the second terminal and electrically contacts the first terminal and the second terminal. A heat conducting material contacts the MOV bars.

Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.

Abstract: Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.

Abstract: A composition includes a filler dispersed in a polymeric matrix. The filler may be electrically conducting in a temperature range and may have a Curie temperature. The composition may have a trip temperature at which electrical resistance of the composition increases with increase in temperature, and the trip temperature of the composition may be determined by the Curie temperature of the filler. The filler may be present in the polymeric matrix in an amount determined by a property of one or both of the polymeric matrix or the filler. An associated method is provided.

Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.

Abstract: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

Abstract: Surface-mountable conductive polymer electronic devices include at least one conductive polymer active layer laminated between upper and lower electrodes. Upper and lower insulation layers, respectively, sandwich the upper and lower electrodes. First and second planar conductive terminals are formed on the lower insulation layer. First and second cross-conductors are provided by plated through-hole vias, whereby the cross-conductors connect each of the electrodes to one of the terminals. Certain embodiments include two or more active layers, arranged in a vertically-stacked configuration and electrically connected by the cross-conductors and electrodes in parallel. Several embodiments include at least one cross-conductor having a chamfered or beveled entry hole through the upper insulation layer to provide enhanced adhesion between the cross-conductor and the insulation layer. Several methods for manufacturing the present surface-mountable conductive polymer electronic devices are also provided.

Abstract: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

Abstract: An insertable PPTC over-current protection device includes: first and second electrodes; a solder material; conductive lead pins bonded to the first and second electrodes, respectively, each of the lead pins having a connecting segment extending along and bonded to an outer surface of the respective one of the first and second electrodes through the solder material, and a free segment extending outwardly from the connecting segment beyond a peripheral edge of the respective one of the first and second electrodes; and a PTC polymer matrix laminated between the first and second electrodes. The PTC polymer matrix is formed with at least one hole that has an effective volume to accommodate thermal expansion of the PTC polymer matrix.

Abstract: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

Abstract: A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VOx), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VOx reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a “drop-in” amorphous vanadium oxide/noble metal thin film of the present invention.

Abstract: A PTC device as well as an electrical device such as a battery pack or a dry-cell type secondary cell containing a PTC device and a secondary cell is made more compact. The PTC device includes (1) a PTC component including a laminar polymer PTC element having an electrically conductive filler and a polymer material, and a metal electrode disposed on a surface of each side of the polymer PTC element; and (2) a lead positioned at least in part on the metal electrode of the PTC component, and connected to the metal electrode by an electrically conductive material. An exposed part of the electrically conductive material is covered by a protective member including a polypropylene resin, a nylon resin or an epoxy resin.

Abstract: A varistor ceramic includes the following materials: Zn as the main component, Pr in a proportion of 0.1 to 3 atom %, and a metal M selected from Y, Ho, Er, Yb and Lu in a proportion of 0.1 to 5 atom %.

Abstract: Methods for chromogen separation-based image analysis are provided, with such methods being directed to quantitative video-microscopy techniques in cellular biology and pathology applications.

Abstract: An over-current protection device comprises a PTC material layer, first and second conductive layers, first and second electrodes, and four conductive vias. The first and second conductive layers are in physical contact with first and second surfaces of the PTC material layer, respectively. The first electrode contains a pair of first metal foils, and the second electrode contains a pair of second metal foils. The four conductive vias are formed at the corners each defined by two adjacent planar lateral surfaces. Two conductive vias connect the pair of the first metal foils and the first conductive layer, and the other two conductive vias connect the pair of the second metal foils and the second conductive layer. The ratio of the sum of the cross-sectional areas of the conductive vias to a form factor area of the device is in the range of 7% to 20%.

Abstract: There is provided a dielectric composition, including: a basic powder including BamTiO3(0.995?m?1.010); a first subcomponent including 0.1 to 0.6 mole of zirconium (Zr) oxide or carbide, based on 100 moles of the basic powder; a second subcomponent including 0.8 to 6.0 moles of oxide or carbide including at least one of magnesium (Mg), strontium (Sr), and barium (Ba); a third subcomponent including 0.2 to 1.8 moles of oxide including at least one rare earth element; a fourth subcomponent including 0.05 to 0.30 mole of oxide including at least one transition metal; a fifth subcomponent including 0.05 to 0.35 mole of oxide including at least one of vanadium (V), niobium (Nb), and tantalum (Ta); and a sixth subcomponent including 0.5 to 4.0 moles of oxide including at least one of silicon (Si) and aluminum (Al).

Abstract: An electrical multilayer component includes a base body with at least two external electrodes. The electrical multilayer component includes at least a first and a second internal electrode, which are each electrically conductively connected to a respective external electrode. The electrical multilayer component includes at least one ceramic varistor layer encompassing at least the first internal electrode. The electrical multilayer component includes at least one dielectric layer arranged between the at least one varistor layer and the second internal electrode. The dielectric layer has at least one opening, which can be filled with a gaseous medium.

Abstract: According to one embodiment, a monolithic cassette with graded electrical resistivity is presented. The monolithic cassette has a continuous grain structure between a first end and a second end; wherein electrical resistivity of the monolithic cassette is graded such that the resistance varies continuously from the first end to the second end. Methods and compositions for forming the monolithic cassette are also presented.

Abstract: A laminated SMD-type thermistor has a conductive module, a left and a right conductive metal layer. The conductive module includes a core conductive module coated with an insulating layer on the upper and lower surface, and the left and right side. The core conductive module includes at least one conductive unit piled up in sequence, two conductive units are separated by an insulating material layer. The conductive unit includes an upper metal foil, a conductive polymer chip and a lower metal foil which are laminated in sequence from top to bottom. A left and right conductive metal layer are coated on the left and right part of the conductive module respectively, and penetrate the insulating layer partially, to connect with two metal foils of the conductive unit respectively. The laminated SMD-type thermistor can further comprise two plating resistant films coated on the upper and lower surface of the conductive module.

Abstract: An over-current protection device includes a conductive composite having a first crystalline fluorinated polymer, a plurality of particulates, a conductive filler, and a non-conductive filler, wherein the plurality of particulates include a second crystalline fluorinated polymer. The first crystalline fluorinated polymer has a crystalline melting temperature of between 150 and 190 degrees Celsius. The plurality of particulates including the second crystalline fluorinated polymer are disposed in the conductive composite, having a crystalline melting temperature of between 320 and 390 degrees Celsius and having a particulate diameter of from 1 to 50 micrometers. The conductive filler and the non-conductive filler are dispersed in the conductive composite.

Abstract: An ESD protection device includes opposed electrodes in a ceramic base material and a discharge auxiliary electrode in contact with each of the opposed electrodes which is arranged so as to provide a bridge from the opposed electrode on one side to the opposed electrode on the other side, the discharge auxiliary electrode includes metallic particles, semiconductor particles, and a vitreous material, and bonding is provided through the vitreous material between the metallic particles, between the semiconductor particles, and between the metallic particles and the semiconductor particles. The metallic particles have an average particle diameter X of about 1.0 ?m or more, and the relationship between the thickness Y of the discharge auxiliary electrode and the average particle diameter X of the metallic particles satisfies about 0.5?Y/X? about 3.

Abstract: The electrical multilayer component includes a base body with external electrodes and internal electrodes. A ceramic varistor layer is provided with the first internal electrode, and a dielectric layer adjoins the varistor layer. The dielectric layer has at least one opening filled with a semiconducting material or a metal.

Abstract: A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.

Abstract: There are provided a dielectric composition, a method of fabricating the same, and a multilayer ceramic electronic component using the same. The dielectric composition includes a perovskite powder particle having a surface on which a doping layer is formed, the doping layer being doped with at least one material selected from a group consisting of alkaline earth elements and boron group elements, and rare earth elements. When a perovskite powder particle is synthesized by using a hydrothermal synthesis method, a doping layer doped with at least one material selected from the group consisting of alkaline earth elements and boron group elements and rare earth elements is formed on a surface of the perovskite powder particle, such that a dielectric composition having excellent reliability, dielectric properties, and electric properties can be fabricated.

Abstract: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

Abstract: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

Abstract: An exemplary varistor is disclosed which includes at least two poles; a non-linear block; a conductive plate arranged on a main face of the block and having a protruding portion forming one of the poles; and an electrically insulating coating applied to the main face of the block. The part forming the connection pole emerges from the electrically insulating coating and has a braze surface extending above the electrically insulating coating; and the protruding part forming the connection pole is connected to the rest of the plate over at least half of the perimeter thereof.

Abstract: A 4-terminal piezoelectronic transistor (PET) which includes a piezoelectric (PE) material disposed between first and second electrodes; an insulator material disposed on the second electrode; a third electrode disposed on the insulator material and a piezoresistive (PR) material disposed between the third electrode and a fourth electrode. An applied voltage across the first and second electrodes causing a pressure from the PE material to be applied to the PR material through the insulator material, the electrical resistance of the PR material being dependent upon the pressure applied by the PE material. The first and second electrodes are electrically isolated from the third and fourth electrodes. Also disclosed are logic devices fabricated from 4-terminal PETs and a method of fabricating a 4-terminal PET.

Abstract: A multilayer PTC thermistor 100 includes a ceramic body 10 having a plurality of ceramic layers 12 and internal electrodes 14 between adjacent ceramic layers 12, external electrodes 30 on the end faces 10a, 10b of the ceramic body 10, and a glass layer 20 on the surfaces 10c, 10d of the ceramic body 10, the glass layer 20 containing an oxide of at least one element selected from the group consisting of zinc and bismuth as the major component, wherein the alkali oxide content of the glass layer is no greater than 0.8 mass %.

Abstract: A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.

Abstract: A method for increasing the ESD pulse stability of an electrical component is disclosed. An electrical component is pre-aged by means of an aging pulse generated by a pulse generator. The degradation of an electrical characteristic curve of the component by ESD pulses that occur during operation of the electrical component is improved by the pre-aging.

Abstract: A dielectric ceramic composition comprises barium titanate as a main component, and as subcomponents, 1.00 to 2.50 moles of an oxide of Mg, 0.01 to 0.20 mole of an oxide of Mn and/or Cr, 0.03 to 0.15 mole of an oxide of at least one element selected from a group consisting of V, Mo and W, 0.20 to 1.50 mole of an oxide of R1 where R1 is at least one selected from a group consisting of Y and Ho, 0.20 to 1.50 mole of an oxide of R2 where R2 is at least one selected from a group consisting of Eu, Gd and Tb and 0.30 to 1.50 mole of an oxide of Si and/or B, in terms of each oxide with respect to 100 moles of the barium titanate.

Abstract: A resistor includes a ceramic body, metal electrodes on sides of the ceramic body, each of which is connected to an electrode lead, and an insulating layer contacting a metal electrode among the metal electrodes. The insulating layer is meltable in response to heat. A conductive connector contacts the insulating layer above the metal electrode and is configured to short the metal electrodes when the insulating layer melts.