Abstract: A variable resistance element capable of increasing stability of a resistance changing operation and reducing a current necessary for changing, to a low resistance state for the first time, the variable resistance element in an initial state immediately after manufacture. The variable resistance element includes: a first electrode (101); a memory cell hole (150) formed above the first electrode (101); a first variable resistance layer (201) covering a bottom of the memory cell hole (150) and an upper surface of the first electrode (101); a second variable resistance layer (202) formed on the first variable resistance layer (201); and a second electrode (102) formed on the memory cell hole (150), in which a thickness of the first variable resistance layer (201) at the bottom of the memory cell hole (150) gradually decreases toward an edge area of the memory cell hole (150) and has a local minimum value around the edge area of the memory cell hole (150).

Abstract: A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27.

Abstract: A new voltage dependent resistor with overheated protection structure. The said voltage dependent resistor includes a ceramic body. Metal electrodes are set at the two opposite sides of the ceramic body, and each of the metal electrodes is connected to one electrode lead. The said voltage dependent resistor further includes a conductive connector structure which can connect the two metal electrodes when a heat-fusing insulating layer that is set between the conductive IN connector structure and the metal electrodes is melt down.

Abstract: A continuously variable resistor is disclosed. The continuously variable resistor may comprise a first chalcogenide layer and a second chalcogenide layer. The second chalcogenide layers may be connected to the first chalcogenide layer and may have a metal interspersed within it. The second chalcogenide layer may be metal-rich, in a state of solid solution with the interspersed metal. The continuously variable resistor may be configured to exhibit NDR behavior. The continuously variable resistor may be configured to have three or more substantially non-volatile resistance states.

Abstract: The invention provides a process for preparing an overvoltage protection material comprising: (i) preparing a mixture comprising a polymer binder precursor and a conductive material; and (ii) heating the mixture to cause reaction of the polymer binder precursor and generate a polymer matrix having conductive material dispersed therein, wherein the polymer binder precursor is chosen such that substantially no solvent is generated during the reaction.

Abstract: A method of making a monolithic porous structure, comprises electrodepositing a material on a template; removing the template from the material to form a monolithic porous structure comprising the material; and electropolishing the monolithic porous structure.

Abstract: The disclosure relates to an overvoltage protection means containing ZnO microvaristor particles for protecting electrical elements and a method to produce the means. Single microvaristor particles are placed in an arrangement having a monolayer thickness and are electrically coupled to the electrical element to protect it against overvoltages. Embodiments, among other things, relate to: 1-dimensional or 2-dimensional arrangements of microvaristor particles; placement of single microvaristors on a carrier; the carrier being planar or string-like, being structured, being a sticky tape, having fixation means for fixing the microvaristors, or having electrical coupling means. The monolayered overvoltage protection means allows very tight integration and high flexibility in shaping and adapting it to the electric or electronic element. Furthermore, reduced capacitance and hence reaction times of overvoltage protection are achieved.

Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

Abstract: A system for setting a shutdown voltage for an electronic device having a power source with an internal resistor includes a temperature sensing module and a processing module. The temperature sensing module is configured for measuring a temperature of the power source, and the temperature sensing module includes a reference resistor with invariable resistance, and generates a reference voltage across the reference resistor based on the temperature of the power source. The processing module is configured for generating a voltage across the internal resistor of the power source based on the temperature of the power source, and setting the shutdown voltage of the electronic device according to the reference voltage and the voltage across the internal resistor.

Abstract: A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

Abstract: The invention provides a process for preparing an overvoltage protection material comprising: (i) preparing a mixture comprising a polymer binder precursor and a conductive material; and (ii) heating the mixture to cause reaction of the polymer binder precursor and generate a polymer matrix having conductive material dispersed therein, wherein the polymer binder precursor is chosen such that substantially no solvent is generated during the reaction.

Abstract: A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6?X?2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.

Abstract: A method for manufacturing a variable resistance element includes the steps of: depositing a variable resistance material (106) in a contact hole (105), which is formed on an interlayer insulating layer (104) on a substrate and has a lower electrode (103) at a bottom portion thereof, such that an upper surface of the variable resistance material (106) in the contact hole (105) is located lower than an upper surface of the interlayer insulating layer (104); depositing an upper electrode material on the deposited variable resistance material (106) such that an upper surface of the upper electrode material in the contact hole (105) is located higher than the upper surface of the interlayer insulating layer (104); and element-isolating by a CMP the variable resistance element including the variable resistance material (106) and the upper electrode material.

Abstract: A varistor comprises an element body, two external electrodes, and a metal conductor. The element body includes a portion having first and second faces opposing each other. Two external electrodes are arranged on the first face of the element body. The metal conductor is arranged on the second face of the element body. The metal conductor has a thermal conductivity higher than that of the element body. At least a region between the two external electrodes and metal conductor in the element body exhibits a nonlinear current-voltage characteristic. The heat transmitted to the varistor is efficiently diffused from the metal conductor in the varistor.

Abstract: An electrical multilayer component has a stack of dielectric layers and electrode layers arranged one above another. An electrically insulating stiffening element is arranged at a distance from at least one electrode layer on the same dielectric layer as the electrode layer. The stiffening element preferably has an increased flexural strength with respect to dielectric material surrounding it.

Abstract: An electric multilayer component includes a stack of dielectric layers and electrode layers arranged side by side. External contacts have different polarities that are arranged at an outer surface of the stack and are flip-chip contact-connectable. The electrode layers are connected by one end in each case to an external connection having the same polarity.

Abstract: A method for producing a multilayer component is described. A stack of green foils, to which inner electrodes including palladium oxide are applied, is sintered. The sintered stack is provided with a silver paste on two or more sides for outer electrodes that are burned into the sintered stack in a further temperature step.

Abstract: An electrical module assembly used in a surge arrester is manufactured by wrapping an electrical module assembly including at least one metal oxide varistor (MOV) disk to which a reinforcing structure including a pre-impregnated epoxy/glass-fiber composite has been applied with shrink film and compacting the wrapped electrical module assembly by heating the shrink film such that the shrink film shrinks and applies a radially compressive force to the electrical module assembly. The wrapped electrical module assembly then is cured at a temperature at which the shrink film no longer applies a compressive force.

Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.

Abstract: In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan ? (thermal conversion factor of resistance) against change in temperature.

Abstract: A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

Abstract: In the case where a variable resistive element, which is made of a variable resistor provided between a first and second electrodes, and of which the electrical resistance varies by applying a voltage pulse between the two electrodes, is applied to a resistance nonvolatile memory, there is a range of the resistance value of the variable resistive element in a low resistance state where the nonvolatile memory can operate normally. In the conventional manufacturing method the resistance value of the variable resistive element is too low, therefore, it can not be controlled within a desired range of the resistance value. A step of carrying out of a reduction process is provided at any point after the step of forming a variable resistor material as a film, it has thereby become possible to increase the resistance value of the variable resistive element, which is too low in the conventional method.

Abstract: An electronic device is provided that includes an electronic component or passive components; an electrically conductive circuit coupled to the electronic component; and a protection device coupled to the circuit. The protection device is operable to route a voltage or current away from the electronic component if the voltage or the current applied to the circuit is above a determined threshold voltage or determined threshold current.

Abstract: A multilayer electrical component is presented having at least one base body, which includes a stack of dielectric layers and electrode layers arranged one upon the other, wherein the multilayer component additionally has a resistor and a decoupling layer, wherein the decoupling layer chemically isolates the resistor from at least one portion of a multilayer element.

Abstract: A laminated variable resistor comprises a main body, internal electrodes extending along two side edges of the main body into the main body, terminal electrodes disposed on the two ends of the main body. The mole percentage of the oxide in overlapping active regions between opposite internal electrodes is reduced and the reduced portion is replaced by a metal selected from gold (Au), silver (Ag), palladium (Pd), platinum (Pt), rhodium (Rh), or the alloy of any two of such metals.

Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.

Abstract: A varistor is provided with a varistor element, and an external electrode disposed on the varistor element. The varistor element contains ZnO as a principal ingredient and contains a rare-earth element and Ca. The external electrode is formed by baking on an outer surface of the varistor element and contains Pt. When the external electrode is formed by baking on the varistor element, a compound of the rare-earth element and Pt and a compound of Ca and Pt are formed near an interface between the varistor element and the external electrode, and exist there. The existence of these compounds enhances the bonding strength between the varistor element and the external electrode.

Abstract: A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract: An electrical multilayer component includes a basic body having at least one stack of dielectric layers and electrode layers arranged alternately one above another. The component also includes an electrically non-connected shielding structure.

Abstract: A varistor comprises a varistor portion, a metal portion, and buffer portion. The varistor portion has a varistor element body exhibiting a nonlinear current-voltage characteristic and two electrode portions. The metal portion has a thermal conductivity higher than that of the varistor element body. The buffer portion is disposed between the varistor portion and metal portion so as to be bonded to each of the varistor portion and metal portion and mainly composed of glass. The two electrode portions are arranged in the varistor element body so as to be electrically insulated from each other while exposing at least a portion of each thereof from an outer surface of the varistor element body. The metal portion and varistor portion are joined firmly to each other. The heat transmitted to the varistor can efficiently be diffused from the metal portion.

Abstract: A stack for a bistable microelectronic switch. A porphyrin compound and a conductive polymer are sandwiched between two electrodes. The device exhibits a switching behavior at a certain voltage and can be used in arrays to form a memory device. When a first voltage is applied between the electrodes, the resistance across the two electrodes is very high, and when a increased voltage is applied, the resistance is generally two orders of magnitude lower. Copper phthalocyanine or 5, 10, 15, 20-tetrakis(4-methoxyphenyl)-21H, 23H-porphine cobalt(II) can be used as the bistable compound, and poly-(3,4-ethylenedioxythiophene) and poly-(styrenesulphonic acid) can be used as the conductive polymer.

Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.

Abstract: A laminated chip varistor comprises a varistor body, first and second inner electrodes, a heat conductor, and first and second outer electrodes. The varistor body has first and second outer faces. The first and second inner electrodes are disposed in the varistor body so that at least portions thereof are opposing to each other. The first and second outer electrodes are formed on the first outer face, the first outer electrode being connected to the first inner electrode, and the second outer electrode being connected to the second inner electrode. The heat conductor is formed in the varistor body extending in a direction from the first outer face toward the second outer face with one end face thereof exposed on the first outer face and the other end face thereof exposed on the second outer face.

Abstract: A variable resistor element comprising a first electrode, a second electrode, and a variable resistor positioned between the first and second electrodes, and changing in electric resistance when a voltage pulse is applied between the both electrodes, has posed problems that it has a restriction of having to use noble metal electrodes as an electrode material and is not compatible with a conventional CMOS process. A variable resistor element using an oxynitride of transition metal element as a variable resistor exhibits a stable switching operation, is satisfactory in data retaining characteristics, and requires a small programming current. Since it does not necessarily require noble metal as an electrode material, it is high in compatibility with the existing CMOS process and easy to produce. It can be formed by a simple step of forming a variable resistor material into a film by oxidizing a lower electrode surface consisting of conductive nitride.

Abstract: A varistor has a disc of ceramic material having opposed faces with face edges. There is an electrode on each face with a gap between each electrode and the edge of the face. Glass passivation is on at least one face in the gap, the passivation not extending from one electrode to the other electrode around the surface of the disc. Because the passivation is only on the planar opposed disc faces, it may be applied in a simple operation such as screen printing. Indeed, the screen printing may be performed while the discs are in the same nest plates as are used for printing of electrode paste. Even though the passivation does not extend from one electrode to the other, it nevertheless breaks a potentially conductive path between the electrodes caused by interaction between the ceramic and encapsulant materials.

Abstract: A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27.

Abstract: A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9.

Abstract: A variable resistance element includes a first conductive portion; an insulating film pattern provided on the first conductive portion; a level difference with respect to the upper surface of the first conductive portion, the level difference being formed of the insulating film pattern; a variable resistance film provided on a side surface of the level difference and having contact with the upper surface of the first conductive portion on the lower-end side of the side surface of the level difference; and a second conductive portion having contact with the variable resistance film on the upper-end side of the side surface of the level difference.

Abstract: The invention relates to a nonlinear electrical material with improved microvaristor filler (1?), to devices and electrical apparatuses comprising such nonlinear electrical material and to a production method thereof. According to invention, the filler (1?) comprises larger spherical particles (5) and smaller irregular particles (6) that are arranged interstitially and provide non-point-like and/or multiple contact areas (56, 56a, 56b, 66) owing to their irregular outer shape comprising edges and faces. Embodiments, among other things, relate to: spherical particles (5) being calcinated and broken-up to retain their original shape; irregular, spikly shaped, particles (6) obtained by calcinating or sintering and crushing or fracturing granules or blocks; and addition of a third filler fraction.

Abstract: A varistor element comprises a varistor element body, a plurality of inner electrode pairs, a connecting conductor, and a plurality of terminal electrodes. The varistor element body has first and second main faces opposing each other. Each inner electrode pair has first and second inner electrodes. The first and second inner electrodes are arranged so as to oppose each other at least partly within the varistor element body. The connecting conductor is arranged on the first main face so as to electrically connect the first inner electrodes in a predetermined inner electrode pair in the plurality of inner electrode pairs to each other. The terminal electrodes are provided so as to correspond to the second inner electrodes in the plurality of inner electrode pairs, and are arranged on the second main face so as to electrically connect with the second inner electrodes.

Abstract: A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Abstract: A chip-type electronic component has: a ceramic element body; a plurality of first and second internal electrodes arranged in the ceramic element body so as to be opposed at least in part to each other; a first external connection conductor to which the plurality of first internal electrodes are connected; a second external connection conductor to which the plurality of second internal electrodes are connected; first and second terminal electrodes; a first internal connection conductor arranged in the ceramic element body and connecting the first external connection conductor and the first terminal electrode; and a second internal connection conductor arranged in the ceramic element body and connecting the second external connection conductor and the second terminal electrode.

Abstract: A multilayer ceramic electronic component includes a multilayer body, a first internal electrode provided in the multilayer body, and a second internal electrode provided in the multilayer body and facing the first internal electrode. The multilayer body includes a first ceramic layer, a second ceramic layer provided on a first surface of the first ceramic layer, and a third ceramic layer provided on a second surface of the first ceramic layer opposite to the first surface. The first and second internal electrodes are connected to the first ceramic layer. The first ceramic layer contains mainly ZnO and 0 to 15 mol % of SiO2. The second ceramic layer contains mainly ZnO and 15 to 50 mol % of SiO2. The third ceramic layer contains mainly ZnO and 15 to 50 mol % of SiO2; The multilayer ceramic component has a low varistor voltage and a small capacitance.

Abstract: The present invention discloses a varistor which comprises three parallel ceramic layers. Each of the ceramic layers has two electrodes on both sides thereof. Four leads are properly arranged between and outside surfaces of the ceramic layers to contact with these electrodes. By further providing one or two wires to connect these leads, the three- or single-phase power sources can be protected in a safer manner.

Abstract: The polymer compound contains a polymer matrix and a filler embedded in the matrix. The filler comprises two filler components with nonlinear current-voltage characteristics deviating from one another. By selection of suitable amounts of these filler components, a polymer compound with a predetermined nonlinear current-voltage characteristic deviating from these two characteristics can be formed in this way.

Abstract: Disclosed herein are a disc varistor having a capability to absorb a double amount of surge and a method of manufacturing the varistor. The varistor includes a disc-shaped first ceramic body having first and second electrodes on opposite surfaces thereof, and a disc-shaped second ceramic body having third and fourth electrodes on opposite surfaces thereof. A first lead wire is in interposed between the second and third electrodes and electrically connected to the second and third electrodes. The varistor also includes a second lead wire. The second lead wire has a body portion electrically connected to the first electrode of the first ceramic body, a first extension extending from the body portion to the second ceramic body, and a second extension extending from the first extension to the fourth electrode.

Abstract: A first voltage variable material (“VVM”) includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without a shell held in the insulating binder; a second VVM includes an insulating binder, first conductive particles with a core and a shell held in the insulating binder, second conductive particles without a shell held in the insulating binder, and semiconductive particles with a core and a shell held in the insulating binder; a third VVM includes only first conductive particles with a core and a shell held in the insulating binder.

Abstract: In a method for sorting PTC elements having different resistance-temperature characteristics, a predetermined voltage that allows a current to sufficiently decay is applied to each of PTC elements A and B, and the PTC elements are sorted on the basis of the difference between the times required for the currents passing through the PTC elements B to reach a predetermined value (e.g., 52 mA).

Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.