Abstract: A MOV includes a MOV body, a first lead, a thermal cut-off fuse, a second lead and a silver electrode area. The MOV of the present invention employs the silver electrode area formed on and electrically coupled to the MOV body, thus the MOV has a lower inductance, which accordingly, enables the MOV to have a high and sound thermal conductivity. Hence, the MOV can fleetly and perfectly transfer heat to the thermal cut-off fuse in case of over-voltages, thus enabling the thermal cut-off fuse to cut off the power more quickly.

Abstract: A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

Abstract: A feedthrough filter includes a base plate having a first contact surface and a second contact surface. The first contact surface and the second contact surface are galvanically connected. The first contact surface is on an upper side of the base plate and the second contact surface is on an underside of the base plate. The base plate has an opening. An electrical feedthrough passes through the opening, is soldered to the second contact surface, and is not soldered to the first contact surface. A least one electrical component includes an external contact that is soldered to first contact surface.

Abstract: An electronic element having at least a pair of electrodes is formed on a substrate. A varistor element is formed on the substrate, the varistor element including a pair of electrodes and a varistor insulating film. When a surge voltage is applied across the pair of electrodes of the varistor element, a surge current flows through the varistor insulating film. One electrode of the varistor element is connected to one electrode of the electronic element, and the other electrode of the varistor element is connected to the other electrode of the electronic element.

Abstract: A nonvolatile memory element comprising: a first electrode 2; a second electrode 6 formed above the first electrode 2; a variable resistance film 4 formed between the first electrode 2 and the second electrode 6, a resistance value of the variable resistance film 4 being increased or decreased by an electric pulse applied between the first and second electrodes 2, 6; and an interlayer dielectric film 3 provided between the first and second electrodes 2, 6, wherein the interlayer dielectric film 3 is provided with an opening extending from a surface thereof to the first electrode 2; the variable resistance film 4 is formed at an inner wall face of the opening; and an interior region of the opening which is defined by the variable resistance film 4 is filled with an embedded insulating film 5.

Abstract: A electrostatic discharge suppression device including an electrostatic discharge reactance layer having a first side and a second side, a first electrode coupled to the first side and comprising a first extension projecting towards a first distal end of the device, and a second electrode coupled to the second side and including a second extension projecting towards a second end of the device, such that the first extension and the second extension overlap to form an electrode overlap area, wherein during an electrostatic discharge event, an electric current is passed between the first and second extensions through the electrostatic discharge layer in the electrode overlap area.

Abstract: The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

Abstract: A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.

Abstract: A composite chip varistor device includes a body; at least one inner varistor, disposed in the body; and a plurality of end electrodes, disposed at two sides of the inner varistor. The body is a highly insulative and imporous mono-material. The body of the present invention provides protection for the inner varistor to avoid being damaged by external factors and the manufacturing cost of the varistor device is effectively reduced.

Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.

Abstract: Disclosed herein are a disc varistor having a capability to absorb a double amount of surge and a method of manufacturing the varistor. The varistor includes a disc-shaped first ceramic body having first and second electrodes on opposite surfaces thereof, and a disc-shaped second ceramic body having third and fourth electrodes on opposite surfaces thereof. A first lead wire is in interposed between the second and third electrodes and electrically connected to the second and third electrodes. The varistor also includes a second lead wire. The second lead wire has a body portion electrically connected to the first electrode of the first ceramic body, a first extension extending from the body portion to the second ceramic body, and a second extension extending from the first extension to the fourth electrode.

Abstract: A varistor including a varistor body with two parallel end faces made of a material that contains one or more metal oxides, and at least one electrode made of an electrically conductive electrode material arranged on any of the end faces of the varistor body. The electrode includes a layer of electrode material coated on the end face by means of an ion- or atom-transferring method, whereby the layer has a thickness within the interval of from 5 micrometers to 30 micro-meters.

Abstract: A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability.

Abstract: In a variable resistance element having a variable resistor between first and second electrodes and changing its electric resistance when a voltage pulse is applied between both electrodes, data holding characteristics can be improved by increasing a programming voltage and programming in a high current density. Therefore, a booster circuit for supplying a high voltage is needed when the variable resistance element is applied to a nonvolatile memory. When the smaller of the areas of the contact regions between the first electrode and variable resistor and between the second electrode and variable resistor is set to the electrode area of the variable resistance element, it is set within a specific range not larger than the predetermined electrode area. Thereby the programming current density can be increased without raising the programming voltage, and the variable resistance element having preferable data holding characteristics even at a high temperature can be provided.

Abstract: Provided is a variable resistance element capable of performing a stable resistance switching operation and having a favorable resistance value retention characteristics, comprising a variable resistor 2 sandwiched between a upper electrode 1 and lower electrode 3 and formed of titanium oxide or titanium oxynitride having a crystal grain diameter of 30 nm or less. When the variable resistance 2 is formed under the substrate temperature of 150° C. to 500° C., an anatase-type crystal having a crystal grain diameter of 30 nm or less is formed. Since the crystalline state of the variable resistor changes by applying a voltage pulse and the resistance value changes, no forming process is required. Moreover, it is possible to perform a stable resistance switching operation and obtain an excellent effect that the resistance fluctuation is small even if the switching is repeated, or the variable resistance element is stored for a long time under a high temperature.

Abstract: Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.

Abstract: Disclosed is a switching element including: an insulative substrate; a first electrode and a second electrode provided to the insulative substrate; an interelectrode gap between the first electrode and the second electrode, comprising a gap of a nanometer order which causes switching phenomenon of resistance by applying a predetermined voltage between the first electrode and the second electrode; and a sealing member to seal the interelectrode gap such that the gap is retained.

Abstract: An overvoltage device that is formed from a MOV device that is coupled in parallel with a spark gap. This device is coupled upstream from electronic components to protect these components from damage. For example, in one embodiment, the overvoltage device is coupled to a fault circuit interrupter such as a GFCI, across the phase and neutral lines to protect components of the GFCI from an overvoltage condition. In one embodiment the overvoltage device is formed as an MOV physically coupled to a spark gap wherein the MOV and the spark gap are electrically coupled across the phase line and the neutral line in parallel.

Abstract: A multilayer ceramic electronic component includes a multilayer body, a first internal electrode provided in the multilayer body, and a second internal electrode provided in the multilayer body and facing the first internal electrode. The multilayer body includes a first ceramic layer, a second ceramic layer provided on a first surface of the first ceramic layer, and a third ceramic layer provided on a second surface of the first ceramic layer opposite to the first surface. The first and second internal electrodes are connected to the first ceramic layer. The first ceramic layer contains mainly ZnO and 0 to 15 mol % of SiO2. The second ceramic layer contains mainly ZnO and 15 to 50 mol % of SiO2. The third ceramic layer contains mainly ZnO and 15 to 50 mol % of SiO2; The multilayer ceramic component has a low varistor voltage and a small capacitance.

Abstract: A metal oxide varistor integrally formed with a heat protection structure that will automatically go to open circuit in conditions of overheating due to sustained over-voltages. The metal oxide varistor integrally formed with a heat protection structure has a body, an insulation bracket, a number of terminals and a fuse. The insulation bracket is deposited on the body and has a number of slots. The fuse connects to the body and one of the terminals. The fuse is mounted one of the slots of the insulation bracket. The fuse reacts to the overheating timely and the melting fuse spreads quickly with the assistance of capillary action evolved by the slots of the insulation bracket to speed up the action to go to open circuit in against damage due to sustained over-voltages.

Abstract: According to one aspect, an integrated circuit may comprise a first electrode, a second electrode, and a resistive switching rod extending from the first electrode to the second electrode and being at least partly embedded in a thermal barrier matrix.

Abstract: A resistor structure includes a substrate, a well of a predetermined conductive type positioned in the substrate, a gate structure positioned on the substrate, a first doping region of the predetermined conductive type positioned at a first side of the gate structure, a second doping region of the predetermined conductive type positioned at a second side of the gate structure. The predetermined conductive type can be P type or N type. A fabricating process of the resistor can be integrated into a conventional MOS transistor fabricating process. Moreover, the resistor has better heat dissipation than conventional resistors.

Abstract: A method of making a monolithic porous structure, comprises electrodepositing a material on a template; removing the template from the material to form a monolithic porous structure comprising the material; and electropolishing the monolithic porous structure.

Abstract: The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Silicon based high resistance value, the claimed invention provides a semiconductor resistance using MOS transistor comprising a gate, drain, source and body terminals wherein the body terminal is tied to the drain terminal, the voltage applied between the source and the gate defining the resistance value.

Abstract: The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.

Abstract: A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 ?m, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.

Abstract: An electrical component includes a first varistor and a second varistor. The first varistor includes first electrodes and ceramic between the first electrodes. At least part of the first electrodes overlap vertically. The second varistor includes second electrodes and ceramic between the second electrodes. The second electrodes are in a substantially same horizontal plane.

Abstract: A method to increase capacity of a passive element to accommodate inrush current is mounting a metal pad in a circuit to evenly distribute the current over a greater area so heating caused by the current to be distributed over a greater area. The passive element has two electrodes attached on a ceramic disc and connecting respectively to two terminals. The metal pad is mounted between one of the electrodes and the corresponding terminal to increase the contact surface between the electrode and the terminal. Then the current passing from the metal pad to the electrode is distributed evenly. Therefore, when the inrush current passes through the circuit, the electrode will not be melted easily to ensure the passive element working normally most of the time.

Abstract: A stack for a bistable microelectronic switch. A porphyrin compound and a conductive polymer are sandwiched between two electrodes. The device exhibits a switching behavior at a certain voltage and can be used in arrays to form a memory device. When a first voltage is applied between the electrodes, the resistance across the two electrodes is very high, and when a increased voltage is applied, the resistance is generally two orders of magnitude lower. Copper phthalocyanine or 5,10,15,20-tetrakis(4-methoxyphenyl)-21H,23H-porphine cobalt(II) can be used as the bistable compound, and poly-(3,4-ethylenedioxythiophene) and poly-(styrenesulphonic acid) can be used as the conductive polymer.

Abstract: A high voltage over-current protection device includes a positive temperature coefficient (PTC) electrically conductive heat-dissipation layer and two metal electrodes. The PTC electrically conductive heat-dissipation layer includes at least one polymer, an electrically conductive filler, and a heat conductive filler. Due to the high thermal conductivity of the heat conductive filler (with a coefficient of thermal conductivity higher than 1 W/mK), the high voltage over-current protection device has a high thermal conduction characteristic, and the withstand voltage thereof can be substantially uniformly distributed in the PTC electrically conductive heat-dissipation layer to enhance its high voltage withstanding characteristic.

Abstract: A varistor including a varistor body with two parallel end faces made of a material that contains one or more metal oxides, and at least one electrode made of an electrically conductive electrode material arranged on any of the end faces of the varistor body. The electrode includes a layer of electrode material coated on the end face by means of an ion- or atom-transferring method, whereby the layer has a thickness within the interval of from 5 micrometers to 30 micrometers.

Abstract: An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer. The PTC material layer is sandwiched between the two metal foils and comprises plural crystalline polymers with at least one polymer melting point below 115° C., and a non-oxide electrically conductive ceramic powder. The non-oxide electrically conductive ceramic powder exhibits a certain particle size distribution. The PTC material layer has a resistivity below 0.1 ?-cm. The initial resistance of the device is below 20 m?, and the area of the PTC material layer is below 30 mm2. The over-current protection device exhibits a surface temperature below 100° C. under the trip state of over-current protection.

Abstract: A preferred varistor body 2 has a structure of alternately laminated internal electrode layer 12 and varistor layer 14. The varistor layer 14 has a composition containing ZnO as the main component, and Co, Pr, and Zr as the auxiliary components. An analysis of the varistor body 2 in the depth direction from the surface thereof satisfies the formula (1) and (2): 0.4×Z1/Z0+0.5?P1/P0?0.4×Z1/Z0+0.9??(1) 1<Z1/Z0<2.2??(2) where, Z0 is the Zr content at a reference depth where the Zr content becomes almost constant, Z1 is the Zr content at a level of 2 ?m at the surface side above the reference depth, P0 is the Pr content at the reference depth, and P1 is the Pr content at a level of 2 ?m at the surface side above the reference depth.

Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

Abstract: Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Abstract: A MOV includes a MOV body, a first lead, a thermal cut-off fuse, a second lead and a silver electrode area. The MOV of the present invention employs the silver electrode area formed on and electrically coupled to the MOV body, thus the MOV has a lower inductance, which accordingly, enables the MOV to have a high and sound thermal conductivity. Hence, the MOV can fleetly and perfectly transfer heat to the thermal cut-off fuse in case of over-voltages, thus enabling the thermal cut-off fuse to cut off the power more quickly.

Abstract: The present invention is directed to a cylindrically shaped superconductor component particularly useful as resistive current limiter composed of a cylindrical superconductor body, in particular of high temperature superconductor material, provided vertically to its longitudinal axis with a number of azimuthal slots 3, incised in parallel and alternating, and one longitudinal slot 2 running parallel to the longitudinal axis over almost the whole length of the cylindrical superconductor body.

Abstract: The polymer compound contains a polymer matrix and a filler embedded in the matrix. The filler comprises two filler components with nonlinear current-voltage characteristics deviating from one another. By selection of suitable amounts of these filler components, a polymer compound with a predetermined nonlinear current-voltage characteristic deviating from these two characteristics can be formed in this way.

Abstract: A transistor resistor and an associated method are provided to improve the resistance linearity of the transistor resistor. The transistor resistor includes a transistor operating in the resistive region, where the drain and source of the transistor receive an input signal and an output signal respectively. The transistor resistor also includes a compensating circuit for generating a compensating signal according to the input signal. The compensating signal is provided to the gate of the transistor such that the voltage difference between the gate and source of the transistor approximates to a constant.

Abstract: A temperature sensor includes a probe section for insertion into a hot zone. The probe section includes a thermistor, a first lengthy pin terminating at the thermistor, and a second lengthy pin also terminating at the thermistor. A housing section is on one end of the probe section and outside of the hot zone. The housing section includes a first spring which biases the first pin into contact with the thermistor, a second spring which biases the second pin into contact with the thermistor, a first electrical contact engaged with the first spring, and a second electrical contact engaged with the second spring.

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract: An electrostatic discharge protection component of an array type includes ceramic insulating substrate 12; varistor region 10 which is pasted on ceramic insulating substrate 12 and then is sintered integrally with ceramic insulating substrate 12; and at least one ground outer electrode 15A and a plurality of input/output outer electrodes 15B. Varistor region 10 includes at least one ground inner electrode 14A, varistor layer 10C and the plurality of input/output outer electrodes 15B so as to form the plurality of varistors. Ground inner electrode 14A is connected with ground outer electrode 15A. This structure enables the protection component to be extremely thin.

Abstract: A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher current densities with reduced shift in resistance. In one embodiment, the thin film resistor device includes a single CDEL layer formed on one side (atop or underneath) the thin film conductor material. In a second embodiment, two CDEL layers are formed on both sides (atop and underneath) of the thin film conductor material. The resistor device may be manufactured as part of both BEOL and FEOL processes.

Abstract: The present invention provides an improved voltage variable material (“VVM”). More specifically, the present invention provides an improved printed circuit board substrate, an improved device having circuit protection an improved data communications cable having circuit protection and a method for mass producing devices employing the VVM substrate of the present invention. The VVM substrate eliminates the need for an intermediate daughter or carrier board by impregnating conductive particles and possibly semiconductive and/or insulative particles associated with known volatage variable materials into the varnish or epoxy resin associated with known printed circuit board substrates.

Abstract: A device (10) for suppressing electrostatic discharge comprises first and second multilayer structures (14, 16) surrounding an electrostatic discharge reactance layer (12), the resistance of said electrostatic discharge reactance layer (12) varying in response to the occurrence of an electrostatic discharge signal. Each multilayer structure (14, 16) comprises a barrier layer (18), a terminal layer (20) and an electrode layer (28). Alternatively, a conductive layer (80) can be used instead of a second multilayer structure (16). An ESD suppression device (110) can be embedded in a printed circuit board (122, 210) providing a way to protect board components from harmful ESD events.

Abstract: To provide a resistance element having an electric resistance body with excellent stability and a method of manufacturing the same. The resistance element includes an electric resistance body, on a base body surface, consisting of a carbon nanotube structure layer 14, which configures a mesh structure in which at least plural carbon nanotubes are cross-linked to one another. The method of manufacturing the resistance element includes: an applying step of applying the base body surface 12 with a liquid solution containing carbon nanotubes having functional groups; and a cross-linking step of forming the carbon nanotube structure layer 14, used as an electric resistance body, that configures a mesh structure in which the plural carbon nanotubes are cross-linked to one another through curing of the liquid solution after application.

Abstract: A multilayer chip varistor comprises a multilayer body and a pair of external electrodes formed on the multilayer body. The multilayer body has a varistor section and a pair of outer layer sections disposed so as to interpose said varistor section. The varistor section comprises a varistor layer developing a voltage nonlinear characteristic and a pair of internal electrodes disposed so as to interpose the varistor layer. The pair of external electrodes are connected to respective electrodes of the pair of internal electrodes. The relative dielectric constant of the outer layer sections is set lower than the relative dielectric constant of the region where the pair of internal electrodes in the varistor layer overlap each other.

Abstract: The present invention is directed to a structure of a surface mounted resettable over-current protection device and a method for manufacturing the same. First, a raw material substrate having two ends is provided. On each of the two ends of the raw material substrate, a patterned conducting metal foil is formed. Then, the raw material substrate is cut to form a grid-shaped substrate having a plurality of strip-shaped structural parts. An insulating layer is formed to enclose the whole grid-shaped substrate, allowing parts of the patterned metal foil layers on the ends of the strip-shaped structural parts to be exposed. Next, the strip-shaped structural parts of the grid-shaped substrate are cut into a plurality of chips, each chip having two cut sections. Finally, two terminal electrodes are formed on the both cut sections of each chip.

Abstract: A surge absorber includes a laminated compact of a first ceramic green sheet having a first internal electrode film extending to both sides thereof, a second ceramic green sheet having an second internal electrode film extending to both end surfaces thereof, and a third ceramic green sheet having a discharge hole. Ground external electrode layers are provided on both sides of the laminate so as to be connected with both ends of the first internal electrode film, and signal external electrode layers are further provided on both end surfaces of the laminated compact so as to be connected with both ends of the second internal electrode film. The laminated compact may also include a resistance element.

Abstract: An electrical resistor has a surface mounted four terminal current sensor of a very low resistance value and capable of handling short pulses of high power. It comprises a flat metal late, 1 to 50 mils thick, of an alloy of high electrical resistivity, to which are welded, on two opposite sides, two flat metal plates of very high electrical conductivity which serve as terminations for electrical interconnection. A slot is cut, from the outside edge toward the center, into each of the two termination plates which divides them into a wide pad for connection of current carrying wires and a narrow one for voltage sensing. The depth of the slots is optimized to get the best stability of resistance readings with changing ambient temperature and under influence of the self-heating effect.