Abstract: An inspection system and methods in which analog image data values (charges) captured by an image sensor are binned (combined) before or while being transmitted as output signals on the image sensor's output sensing nodes (floating diffusions), and in which an ADC is controlled to sequentially generate multiple corresponding digital image data values between each reset of the output sensing nodes. According to an output binning method, the image sensor is driven to sequentially transfer multiple charges onto the output sensing nodes between each reset, and the ADC is controlled to convert the incrementally increasing output signal after each charge is transferred onto the output sensing node. According to a multi-sampling method, multiple charges are vertically or horizontally binned (summed/combined) before being transferred onto the output sensing node, and the ADC samples each corresponding output signal multiple times. The output binning and multi-sampling methods may be combined.

Abstract: An imaging device includes: a modulator with a first pantoscopic grating pattern, which is configured to modulate light intensity by passage through the first pantoscopic grating pattern; an image sensor configured to convert light passing through the modulator, to image data, and output the image data; and an image processing unit configured to conduct image processing of restoring an image with the use of the image date output from the image sensor, and the imaging device is characterized in that: the first pantoscopic grating pattern is configured to include multiple basic patterns; and each of the basic patterns has the shape of a concentric circle.

Abstract: A store profile generation system includes a mobile base and an image capture assembly mounted on the base. The assembly includes at least one image capture device for acquiring images of product display units in a product facility, product labels being associated with the product display units which include product-related data. A control unit acquires the images captured by the at least one image capture device at a sequence of locations of the mobile base in the product facility. The control unit extracts the product-related data from the acquired images and constructs a store profile indicating locations of the product labels throughout the product facility, based on the extracted product-related data. The store profile can be used for generating new product labels for a sale in an appropriate order for a person to match to the appropriate locations in a single pass through the store.

Abstract: An electronic device is provided with a display and a light sensor that receives light that passes through the display. The display includes features that increase the amount of light that passes through the display. The features may be translucency enhancement features that allow light to pass directly through the display onto a light sensor mounted behind the display or may include a light-guiding layer that guides light through the display onto a light sensor mounted along an edge of the display. The translucency enhancement features may be formed in a reflector layer or an electrode layer for the display. The translucency enhancement features may include microperforations in a reflector layer of the display, a light-filtering reflector layer of the display, or a reflector layer of the display that passes a portion of the light and reflects an additional portion of the light.

Abstract: An image capture device, pixel, and method of determining a focus setting for an image capture device are described. The image capture device includes an imaging area and a pixel readout circuit. The imaging area includes a plurality of pixels. The plurality of pixels includes multiple pixels in which each pixel of the multiple pixels includes a two-dimensional array of photodetectors and a microlens. Each photodetector in the array of photodetectors for a pixel is electrically isolated from each other photodetector in the array of photodetectors. A microlens is disposed over the array of photodetectors for the pixel. The pixel readout circuit includes, per pixel, a shared readout circuit associated with the array of photodetectors for the pixel and a set of charge transfer transistors. Each charge transfer transistor is operable to connect a photodetector in the array of photodetectors to the shared readout circuit.

Abstract: A readout circuit includes a comparator coupled to receive a ramp signal an output of a dual conversion gain pixel. A single counter is coupled to the output of the comparator. The counter is coupled to write to only one of a first or a second memory circuits at a time. A first multiplexor is coupled to load either an initial value or an initial memory value from the first memory circuit into the counter. A second multiplexor is coupled to load either a low conversion gain memory value from the first memory circuit or a high conversion gain memory value from the second memory circuit into a single data transmitter, which is coupled to transmit the received memory value to a digital processor.

Abstract: A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.

Abstract: A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

Abstract: The present disclosure relates to a solid-state image sensing apparatus, a control method, and an electronic device capable of reducing a settling time of a vertical signal line at the time of a read operation of pixels. A column processing unit A/D converts pixel signals of a plurality of pixels. A vertical signal line feeds the pixel signals output from the pixels to the A/D converter. A pull-up circuit increases a potential of the vertical signal line at the time of starting a read operation of the pixels. For example, the present disclosure can be applied to a CMOS (Complementary Metal-Oxide Semiconductor) image sensor that performs an interleaving operation or the like.

Abstract: A receiving method includes: setting a first exposure time for at least one exposure line of exposure lines in an image sensor, setting a second exposure time for a remainder of the exposure lines in the image sensor, and causing the image sensor to capture an image of a light transmitter, to obtain a normal image from the at least one exposure line with the first exposure time, and to obtain a bright line image from the remainder of the exposure lines with the second exposure time. The second exposure time is shorter than the first exposure time. The bright line image includes a plurality of bright lines, each of which corresponds to a different one of the remainder of the exposure lines in the image sensor. Information is obtained by decoding a pattern of the plurality of the bright lines included in the obtained bright line image.

Abstract: Image sensors may have high dynamic range (HDR) functionality. To implement the high dynamic range functionality, the image sensor may use multiple exposure imaging. In multiple exposure imaging, multiple images are captured with an image sensor at different exposure times and are later combined into a single high dynamic range image. Image data from one or more exposures in a multi-exposure imaging scheme may be used to determine that subsequent exposures will not produce useful information. To conserve power in the image sensor, certain readout circuitry such as analog-to-digital converter circuitry and column memory may be disabled during readout of the exposures that are determined to not produce useful information.

Abstract: An embodiment provides an imaging apparatus including pixels arranged to form rows including first and second rows, first control lines connected to the pixels of the first row, second control lines connected to the pixels of the second row, and a scan unit including at least a first row drive unit generating first control signals supplied to the first control lines and a second row drive unit generating second control signals supplied to the second control lines, the scan unit being configured to drive the pixels in units of rows based on a scanning signal. The first control signals generated by the first row drive unit is input to the second row drive unit. The second row drive unit selects the first control signals and the scanning signal and generates the second control signals based on the selected signals.

Abstract: An image sensor has a pixel cell array comprising clusters of pixel cell blocks each block having four pixel cells under the same microlens and filter wherein during readout electrical signals from two pixels positioned along a first diagonal are binned followed by binning the signals from two pixels positioned along the remaining second reverse diagonal in order to reduce spatial color artifacts associated with orthogonal binning schemes and minimize gaps or irregular spacing between optical centers within an image read out from the array of pixel cells.

Abstract: An image sensor includes: a plurality of large-defocus detection pixel pairs configured to be used when a displacement of a focus is greater than a predetermined value; and a plurality of normal pixels arranged in a substantially matrix shape and configured to acquire an image. A large-defocus detection line including the large-defocus detection pixel pairs is provided for each of a predetermined number of lines, and on each of the large-defocus detection lines, the plurality of large-defocus detection pixel pairs are configured as a plurality of exit pupil distance-supporting large-defocus detection pixel pairs corresponding to different exit pupil distances.

Abstract: The present technology relates to signal processing device and method, an imaging element, and an electronic device capable of reducing a rise of costs. A signal processing device according to the present technology includes a measurement unit that performs measurement of a length of a period from an input start of a signal to a change of a value of the signal a plurality of times, retains measured values obtained by the measurement performed the plurality of times, sets an initial value of the measurement on the basis of any one of a plurality of the retained measured values, and performs the measurement by using the initial value. The present technology is applicable to an electronic circuit such as a flip-flop circuit and an A/D conversion unit, an imaging element such as a CMOS image sensor, and an electronic device such as a digital still camera, for example.

Abstract: An image sensor includes a light sensing array, a light filtering array, and a plurality of conversion units. The light sensing array includes a plurality of light sensing units. Each of the light sensing units includes a plurality of light sensing pixels. The light filtering array is disposed on the light sensing array. The light filtering array further includes a plurality of light filtering units. Each of the light filtering units correspondingly covers one of the light sensing units. Each of the conversion units includes at least two source followers. At least one of the at least two source followers is connected to a plurality of the light sensing pixels. A control method configured to control the image sensor and an electronic device including the image sensor are also provided.

Abstract: An imaging apparatus including: an image sensor for obtaining image data; a highlight signal generation circuit for generating a highlight signal from the image data; a highlight signal combining circuit for combining a plurality of the highlight signals to generate a combined highlight signal; a display image generation circuit for superimposing the combined highlight signal on the image data to generate display image data; and a controller for moving the focusing position to a different focus position, obtaining first image data and second image data, causing the highlight signal generation circuit to generate first and second highlight signals from these pieces of image data, causing the highlight signal combining circuit to combine the first and second highlight signals to generate a combined highlight signal, and causing the display image generation circuit to superimpose the combined highlight signal on the second image data to generate display image data.

Abstract: An image sensing device includes pixel groups, each pixel group including two or more neighboring pixels and grouped into a same pattern; and a timing generator controlling the pixel groups based on one or more row units, wherein readout orders of first and second pixel groups arranged in different rows among the pixel groups are controlled differently, wherein the first pixel group reads out two or more pixel signals based on two or more first transmission control signals, wherein the second pixel group reads out two or more pixel signals based on two or more second transmission control signals, wherein the timing generator generates the first transmission control signals in a first order during one or more first row readout times, wherein the timing generator generates the second transmission control signals in a second order, which is different from the first order, during one or more second row readout times.

Abstract: There is provided a signal processor including a phase difference detection part configured to acquire a pixel value of one light-shielding pixel having a part of a light-receiving region shielded therein and pixel values of a peripheral pixel row of the light-shielding pixel in a light shielding direction. A corrected pixel value obtained by subjecting the pixel value of the light-shielding pixel to a reduced sensitivity correction is compared with the pixel values of the peripheral pixel row to detect a phase difference of the light-shielding pixel.

Abstract: The present disclosure relates to a solid-state image sensing apparatus, a control method, and an electronic device capable of reducing a settling time of a vertical signal line at the time of a read operation of pixels. A column processing unit A/D converts pixel signals of a plurality of pixels. A vertical signal line feeds the pixel signals output from the pixels to the A/D converter. A pull-up circuit increases a potential of the vertical signal line at the time of starting a read operation of the pixels. For example, the present disclosure can be applied to a CMOS (Complementary Metal-Oxide Semiconductor) image sensor that performs an interleaving operation or the like.

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

Abstract: An apparatus is provided that includes a display, an image sensor having a plurality of exposure lines, a processor, and a memory storing a computer program, which when executed by the processor, causes the processor to perform operations. The operations include displaying a first assist image on the display, and executing a visible light communication mode. In the visible light communication mode, the operations include (i) setting a second exposure time of the image sensor so that, in an image obtained by capturing a subject by the image sensor, a plurality of bright lines corresponding to the plurality of exposure lines included in the image sensor appear according to a change in luminance of the subject, (ii) obtaining a bright line image including the plurality of bright lines, and (iii) obtaining information by demodulating data specified by a pattern of the plurality of bright lines.

Abstract: A pixel circuit, a semiconductor camera detection circuit and a display device. The pixel circuit includes: a photodiode, a driving circuit, an initialization circuit, a transmission circuit, a voltage write-in circuit (2 and a compensation circuit. One end of the photodiode is electrically connected to a grounding end, and another end is electrically connected to the transmission circuit; the initialization circuit is configured to pull a voltage of a first node to an initialization voltage under control of the initialization signal end; the transmission circuit is configured to pull down the voltage of the first node from the initialization voltage to a data voltage under control of the first scanning signal end; the voltage write-in circuit is configured to write the data voltage into the driving circuit and output a grounding voltage to the compensation circuit; the compensation circuit is configured to perform threshold voltage compensation on the driving circuit.

Abstract: A radiation detector (radiation sensor 1) includes a sensor element (3) and an amplifying transistor (5), reads a current value that flows between the drain and the source based on a change in voltage of a gate electrode of the amplifying transistor (5), and also includes a reset reading circuit (10) that includes an amplifier (11) and reads the current value, and the reset reading circuit (10) outputs an initial voltage to the gate electrode so that the current value becomes a value that is determined in advance.

Abstract: An image sensor comprising a plurality of imaging pixels, a plurality of focus detecting pixels in which opening positions of light receiving sections are shifted from those of the imaging pixels, and a plurality of color filters arranged corresponding to the imaging pixels and the focus detecting pixels, wherein first focus detecting pixels in which opening positions are shifted in a first direction are arranged at positions corresponding to first color filters of the imaging pixels, and second focus detecting pixels in which opening positions are shifted in the first direction and which have opening ratios different from those of the first focus detecting pixels are arranged at positions corresponding to the first color filters.

Abstract: A circuit includes a sensing unit, a first group of switching units, and a second group of switching units. The sensing unit is configured to receive light and generate a sensing voltage at a sensing node in response to the light. The first group of switching units is coupled to the sensing node, and configured to generate a first transfer voltage to a first node and generate a first auxiliary voltage to a second node. At least one of the first transfer voltage and the first auxiliary voltage is read by a readout circuit. The second group of switching units is coupled to the sensing node, and configured to generate a second transfer voltage to a third node and generate a second auxiliary voltage to a fourth node. At least one of the second transfer voltage and the second auxiliary voltage is read by the readout circuit.

Abstract: A matrix-addressed system includes a system substrate and an array of pixels arranged in rows and columns disposed on the system substrate. A column-control circuit provides information to or receives information from the pixels. The column-control circuit includes a separate column-driver circuit connected to each column of pixels that provides information in common to all of the pixels in the column or receives information in common from all of the pixels in the column. A row-select circuit likewise disposed on the system substrate includes a serial shift register having a number of row storage elements equal to or larger than the number of rows in the array of pixels. Each row storage element in the shift register has a row-select line connected to all of the pixels in a row.

Abstract: An apparatus and a method for steering a chip scale LIDAR. A light detection and ranging apparatus includes an actuator with at least one pocket and at least one channel connected to the at least one pocket formed inside a material below a top surface of the actuator, a chip scale LIDAR attached on the top surface of the soft actuator, at least one pump connected to the at least one channel, and an actuation controller configured to control the at least one pump and to activate at least one mode of the actuator.

Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: An image capturing apparatus has an image sensor in which unit pixels each having a plurality of photoelectric conversion portions are arranged in matrix, a readout unit for performing a first readout operation of reading out signals of a portion of the plurality of photoelectric conversion portions and a second readout operation of reading out signals of a greater number of the plurality of photoelectric conversion portions, a switching regulator, and a frequency controller for controlling a switching frequency of the switching regulator. The frequency controller controls the switching frequency such that the phase of the switching frequency satisfies predetermined relationship, with respect to a timing for reading out noise signals, a timing for reading out signals by the first readout operation, and a timing for reading out signals by the second readout operation.

Abstract: An imaging system has an interchangeable lens and a camera body capable of communicating with the interchangeable lens. A camera control unit of the camera body acquires focus-sensitivity-related information (including sensitivity information at an image height of the center and correction information of the sensitivity that changes depending on the image height) from a lens control unit of the interchangeable lens through communication at a suitable timing. The camera control unit corrects a change of the sensitivity caused by the image height using image height information of a focus detection region selected from a plurality of focus detection regions and the acquired focus sensitivity correction information. The camera control unit calculates a driving amount of the focus lens from the focus detection signal using the corrected focus sensitivity, generates a control signal for instructing the driving amount, and transmits the control signal to a lens control unit.

Abstract: It is a method of driving a MOS type imaging element in which pixels having sensitivities for different colors are arranged two-dimensionally, in which the imaging element has at least two types of read-out lines having different pixel arrangements to read out a charge signal of the pixels, and the method includes driving such that a read-out time interval of a charge signal of at least one type of read-out line among the read-out lines is longer than a read-out time interval of another type of read-out line and a charge accumulating period of each pixel of the one type of read-out line is longer than a charge accumulating period of each pixel of said another type of read-out line.

Abstract: A solid-state imaging device includes: a pixel array unit in which there are arrayed in a matrix form a plurality of pixels including a plurality of normal pixels which are pixels for video output, and a plurality of phase difference pixels which are pixels for focal-point detection; an A/D conversion unit configured to compare pixel signals output from the pixels of the pixel array unit with a ramp signal serving as a reference signal, thereby performing A/D conversion on the pixel signals; and a control unit configured to perform control so that the ramp signal to be compared with the phase difference pixels has a different slope from that of the ramp signal to be compared with at least a part of the normal pixels.

Abstract: A light sensing unit for a light sensing circuit of an image sensor includes a first light sensing element, a first floating node and at least one coupling element. The first light sensing element is used for sensing light to obtain a light sensing result and generating a plurality of carriers accordingly. The first floating node is used for receiving and storing the plurality of carriers generated by the first light sensing element. The at least one coupling element is used for coupling the first floating node to at least one second floating node, and transmitting a part of the plurality of carriers stored in the first floating node to the at least one second floating node to be stored in the at least one second floating node.

Abstract: A solid-state image pickup device includes a column ADC realizing higher precision and higher-speed conversion. Converters converts a signal of each pixels output via a corresponding vertical read line to a digital value by sequentially executing first to N-th (N: integer of three or larger) conversion stages. In the first to (N?1)th conversion stages, each converter determines a value of upper bits including the most significant bit of a digital value by comparing the voltage at a retention stage with a reference voltage while changing the voltage at a retention node. In the N-th conversion stage, each converter determines a value of remaining bits to the least significant bit by comparing the voltage at the retention node with the reference voltage while continuously changing the voltage at the retention node in a range of the voltage step in the (N?1)th conversion stage or a range exceeding the range.

Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.

Abstract: An imaging device, comprising: a pixel group in which unit pixels including a plurality of pixels receiving light fluxes having passed through different pupil areas of a photographing lens are provided in a form of a matrix; a plurality of types of color filters with different spectral transmittances provided in correspondence with the unit pixels; a microlens provided in correspondence with the color filter; a color information detection circuit which detects subject color information; and a pixel signal readout circuit which reads out a focus detection signal from the pixel group and reads out only a signal of the unit pixel in correspondence with a color filter associated with subject color information detected by the color information detection circuit.

Abstract: An imaging apparatus includes an imaging unit, a peak image generating unit, a background image generating unit, a composing unit, and a display unit. The imaging unit images a subject to acquire RAW data. The peak image generating unit extracts peak portions from the RAW data to generate peak image data. The background image generating unit subjects the RAW data to image processing to generate background image data. The composing unit composes the peak image data with the background image data to generate composite image data. The display unit displays an image based on the composite image data.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: A pixel circuit includes a first photocharge accumulator including at least two photodiodes exposed to light for a long period of time, and a second photocharge accumulator including at least one photodiode exposed to light for a short period of time. The pixel circuit includes a first transfer controller that transfers photocharges accumulated in the first photocharge accumulator to a floating diffusion area, and a second transfer controller that transfers photocharges accumulated in the second photocharge accumulator to the floating diffusion area. The pixel circuit includes a driving transistor to generate a pixel signal according to the photocharges transferred to the floating diffusion area. A number of photodiodes of the first photocharge accumulator is greater than a number of photodiodes of the second photocharge accumulator.

Abstract: A solid state image device includes a pixel unit including a plurality of pixels arranged in a matrix; an analog-to-digital conversion unit that converts a signal from the pixel unit into a digital signal; a digital circuit unit that processes the digital signal from the analog-to-digital conversion unit; and a wiring that supplies a predetermined voltage to the pixel unit. The wiring includes a first wiring section facing the pixel unit, a second wiring section facing at least one of the analog-to-digital conversion unit and the digital circuit unit, and a third wiring section connected to an electrode pad and connected to an electrode pad and between the second wiring section and the electrode pad, and the width of the second wiring section is smaller than respective widths of the first wiring section and the third wiring section.

Abstract: An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

Abstract: A solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus capable of suppressing occurrence of motion distortion while realizing widening of dynamic range and in turn realizing a higher image quality are provided.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs of unit pixels in each of the plurality of groups and output binning sampling signals, and an analog-digital conversion block including first and second analog-digital conversion units corresponding to the columns. The first analog-digital conversion units convert the binning sampling signals. When the first analog-digital conversion units convert the binning sampling signals, the second analog-digital conversion units are turned off.

Abstract: An image sensor includes multiple pixel groups arranged in a row included in a pixel array, the row including multiple pixels respectively allocated to the multiple pixel groups. The image sensor further includes multiple row drivers configured to respectively control operations of the pixels respectively allocated to the pixel groups in the row, and multiple readout circuits configured to respectively read out pixel signals output by the pixels respectively allocated to the pixel groups in the row.

Abstract: A solid-state imaging apparatus and an imaging system which can reduce the occurrence of darkening and decrease deterioration in CDS performance are provided. The solid-state imaging apparatus has: a pixel unit including a photoelectric conversion unit for generating a signal by a photoelectric conversion; an amplifier unit for amplifying the signal generated by the photoelectric conversion unit; and a limiting circuit for limiting a level of an output signal from the amplifier unit. The pixel unit outputs a noise signal under a reset state during a first period and outputs a pixel signal under a non-reset state during a second period. The limiting circuit limits the level of the output signal from the amplifier unit in the first period, lower than the level of the output signal from the amplifier unit in the second period.

Abstract: A method for manipulating the bus communication of an electronic control device is provided, wherein the bus communication includes a bus hardware-independent first communication layer and a bus hardware-dependent second communication layer. The first communication layer encodes at least one piece of information in a first protocol data unit and transmits it to the second communication layer and/or the first communication layer receives the first protocol data unit from the second communication layer and decodes the first information from the first protocol data unit. The second communication layer generates bus hardware-dependent bus information from the first protocol data unit or from an additional protocol data unit derived from the first protocol data unit for transmission via the bus and/or the second communication layer generates the first protocol data unit or an additional protocol data unit, from which the first protocol data unit can be derived.