Abstract: An imaging apparatus includes: an optical lens; light receiving units each reading a photoelectric conversion signal; microlenses each placed for every two or more of the adjacent light receiving units; a signal generating unit generating (i) a full-addition signal by adding all of the photoelectric conversion signals obtained in a predetermined frame by the two or more adjacent light receiving units, (ii) a partial addition signal by adding the photoelectric conversion signals obtained by at least one but not all of the two or more adjacent light receiving units, and (iii) non-addition independent signals that are the photoelectric conversion signals of one of the light receiving units; a phase difference detecting unit detecting a focal point from the partial addition signal and the non-addition independent signals; and a camera YC processing unit generating a main image from the full-addition signal.

Abstract: A solid-state imaging apparatus includes: a plurality of pixels arranged in a matrix; a plurality of amplifier circuits each arranged correspondingly to each of columns of the pixels, for amplifying a signal from the pixel; and a current source transistor whose source is supplied with a power source voltage and which supplies the amplifier circuit with a bias current. When the current source transistor is operating in the saturation region, the gate voltage of the current source transistor that is supplied from the bias line is sampled and held. The gate voltage of the current source transistor with respect to the power source voltage is controlled to the sampled voltage, thereby suppressing variation. This suppression can, in turn, suppress occurrence of line noise and a lateral smear due to difference of drop in voltage of a power source line concerning a column circuit on each row.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: A method for high dynamic range imaging using more than two capture intervals, where images are captured in a repeating sequence that avoids interlace bounce, and overlapping groups of combined images form composite frames for output, and an imaging system comprising an imaging array, processing means and a display, wherein the imaging array is operable to capture a succession of images by detecting incident light and the processing means is operable to process said images as required, and pass the processed images to the display for output.

Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

Abstract: In a solid-state image sensing element which includes a pixel array portion in which a plurality of pixels each including a photoelectric converter are arranged two-dimensionally, and readout circuits which read out analog pixel signals from the pixel array portion by column, and in which each of the readout circuits includes an A/D conversion circuit which converts the analog pixel signal from the pixel array portion into a digital pixel signal, and the A/D conversion circuit performs A/D conversion by comparing, by a comparison unit, a signal level of the analog pixel signal from the pixel array portion with a temporally changing reference level, a frequency band characteristic of the comparison unit is switched in accordance with the signal level of the analog pixel signal from the pixel array portion.

Abstract: A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Abstract: An information communication method that enables communication between various devices includes: transmitting position information indicating a position of an image sensor; receiving an ID list; setting an exposure time of the image sensor; obtaining a bright line image including a bright line, by capturing a subject by the image sensor; obtaining information by demodulating data specified by a pattern of the bright line included in the obtained bright line image; and searching the ID list for identification information that includes the obtained information.

Abstract: A solid-state imaging device includes: an R pixel provided with an R filter for transmitting red-color light; a B pixel provided with a B filter for transmitting blue-color light; an S1 pixel which is provided with an S1 filter with a visible light transmittance independent of wavelengths in a visible light region and has a sensitivity higher than that of the R pixel; and an S2 pixel which is provided with an S2 filter with a visible light transmittance independent of wavelengths in the visible light region and lower than the visible light transmittance of the S1 filter and has a sensitivity lower than the sensitivity of the S1 pixel.

Abstract: An image processing apparatus has a plurality of optical systems arranged two-dimensionally and a plurality of photoelectric conversion elements which are two-dimensionally arranged for each of the plurality of optical systems and are used to photoelectrically convert an image from each optical system, and inter-frame prediction encodes a plurality of image frames each having a different parallax, which are formed by the plurality of photoelectric conversion elements.

Abstract: Each of pixels in a pixel array includes a photoelectric converter and a readout circuit which outputs a signal in accordance with charges generated in the photoelectric converter. The readout circuit includes a group of transistors which are disposed so as to form a current path fed by a current source. The readout circuit of a pixel in a first line in the array and the readout circuit of a pixel in a second line in the array are disposed between the photoelectric converter of the pixel in the first line and the photoelectric converter of the pixel in the second line. Directions of currents respectively flowing through the group of transistors in the readout circuit of the pixel in the first line and the plurality of transistors in the readout circuit of the pixel in the second line are the same.

Abstract: A solid-state imaging device includes: a unit pixel including a photoelectric conversion section, an impurity-diffusion region capable of temporarily accumulating or holding electric charges generated by the photoelectric conversion section, and a reset transistor resetting the impurity-diffusion region by a voltage of a voltage-supply line, and having an impurity concentration such that at least the reset transistor side of the impurity-diffusion region becomes a depletion state; and a drive circuit changing the voltage of the voltage-supply line from a first voltage lower than a depletion potential of the reset transistor side of the impurity-diffusion region to a second voltage higher than the depletion potential while the reset transistor is on.

Abstract: An image sensor is provided which includes a plurality of operation blocks configured to provide an image signal in response to an incident light, and a power supply block configured to supply a power to one or more operation blocks of the plurality of operation blocks based on a selected operation mode or operation interval. The operation mode is one of at least a first mode and a second mode, and a resolution of the image signal generated in the second mode is lower than that generated in the first mode.

Abstract: A solid-state imaging apparatus wherein an FD capacitor value is variable without increasing the number of elements. There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion elements arranged in a horizontal direction and a vertical direction, for generating an electric charge by photoelectric conversion; a plurality of transfer transistors each connected to each of the photoelectric conversion elements, for transferring the electric charge generated by the plurality of photoelectric conversion elements; a plurality of floating diffusion regions for holding the electric charge transferred by the transfer transistors; a plurality of amplifiers each connected to each of the floating diffusion regions, for amplifying a signal based on the electric charge in the plurality of floating diffusion regions; and a connecting unit for connecting and disconnecting between the plurality of floating diffusion regions.

Abstract: In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which signals from the pixels belonging to the pixel rows of the second group are output.

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: An image-capturing device includes image-capturing section, an image-data-generation section, and an image capture control section. The image-capturing section is for capturing an image of a subject and starting generating of image-capture data corresponding to a single frame in synchronization with a vertical synchronization signal, The image-data-generation section is for carrying out processing for generating image data showing an image of the subject, on the basis of the image-capture data. The image capture control section is for varying, at a minimum, either a number of pulses of subsignals generated a plurality of times within a period of one cycle of the vertical synchronization signal, or the cycle for generating the vertical synchronization signal.

Abstract: An information communication method selects between a visible light communication mode, in which information is obtained from a subject using an image sensor having a plurality of exposure lines, and a normal imaging mode. The information communication method includes obtaining first image data by image capture with a first exposure time in the normal imaging mode and obtaining second image data by image capture with a second exposure time, shorter than the first exposure time, in the visible light communication mode. When the second image data is obtained by capturing a plurality of subjects reflected on a reflection surface, the information is obtained by separating a bright line corresponding to each subject from bright lines included in the second image data according to a strength of the bright line and demodulating, for each subject, the data specified by the pattern of the bright line.

Abstract: A solid-state imaging device includes: a pixel unit in which pixels are arranged in a matrix pattern; and a pixel signal read-out unit including an AD conversion unit performing analog-to-digital (AD) conversion of a pixel signal read out from the pixel unit, wherein each pixel included in the pixel unit includes division pixels divided into regions in which photosensitivity levels or electric charge accumulating amounts are different from one another, the pixel signal reading unit includes a normal read-out mode and a multiple read-out mode, and includes a function of changing a configuration of a frame in accordance with a change of the read-out mode, and wherein the AD conversion unit acquires a pixel signal of one pixel by adding the division pixel signals while performing AD conversion for the division pixel signals.

Abstract: An A/D conversion circuit may include: a delay circuit that includes a plurality of delay units having a first pulse input terminal, a pulse output terminal, and an analog signal input terminal, wherein each first pulse input terminal of the plurality of delay units is connected to one of the pulse output terminals corresponding to the plurality of delay units, and a pulse output signal input to the first pulse input terminal is delayed in accordance with an analog signal input to the analog signal input terminal and output from the pulse output terminal, and one of the plurality of delay units has a second pulse input terminal to which a pulse signal is input from outside; a state variation detection circuit; and an encoding signal latch circuit.

Abstract: There is provided an imaging apparatus including an A/D converting unit, wherein reset periods for a plurality of pixels are differentiated.

Abstract: A solid-state image sensor comprising a pixel array having a plurality of pixels, and a plurality of signal processing circuits each of which amplifies a signal of the pixel array, wherein each of the plurality of signal processing circuits comprises an operation amplifier having an input terminal and an output terminal, an input capacitance arranged between the input terminal and the column signal line, and a feedback circuit which connects the input terminal with the output terminal, wherein the feedback circuit is configured to form a feedback path in which a first and a second capacitance elements are arranged in series in a path connecting the input terminal to the output terminal, and a third capacitance element is arranged between a reference potential and a path connecting the first capacitance element to the second capacitance element.

Abstract: A solid-state imaging device includes a pixel unit in which pixels each including a photoelectric conversion element and a signal accumulation circuit are arranged in a matrix shape and a plurality of pixels in a range of two or more rows form the same group, and a control unit that performs control to associate a plurality of photoelectric conversion elements that are targets from which signals are read in the same group with a plurality of signal accumulation circuits in the same group of an array having a number of rows smaller than a number of rows in an array of the plurality of photoelectric conversion elements, transfer signals generated by the plurality of photoelectric conversion elements to the signal accumulation circuits associated with the respective photoelectric conversion elements, and output the signals accumulated in the signal accumulation circuits for each row.

Abstract: A solid-state imaging device includes: a pixel unit in which a plurality of pixels are arranged in a matrix pattern; and a pixel signal read-out unit including an AD conversion unit performing AD conversion of a pixel signal read out from the pixel unit, wherein each pixel included in the pixel unit includes division pixels divided into regions in which photosensitivity levels or electric charge accumulating amounts are different from one another, wherein the pixel signal reading unit includes a normal read-out mode and a multiple read-out mode, and wherein the AD conversion unit acquires a pixel signal of one pixel by adding the division pixel signals read out in accordance with the read-out mode while performing AD conversion for the division pixel signals.

Abstract: An image capturing apparatus including an image sensor including a pixel region in which a plurality of pixels are arranged in a row direction and a column direction, and readout unit for reading out pixel signals from the plurality of pixels, setting unit for setting an imaging condition and control unit for selecting one of a readout mode between thinning readout mode in which the pixel signals are read out from the plurality of pixels while thinning out the plurality of pixels and a mixing readout mode in which the pixel signals of the plurality of pixels are mixed and readout according to the imaging condition set by the setting unit.

Abstract: A method of reading pixel data from a pixel array includes exposing each one of a plurality of regions of pixels a respective exposure time. Pixel data is read from the plurality of regions of pixels. The pixel data is interpolated from a first one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the first one of the plurality of regions of pixels to generate a first image having the first exposure time. The pixel data is interpolated from the second one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the second one of the plurality of regions to generate a second image having the second exposure time. The images are combined to produce a high dynamic range image.

Abstract: An image sensor includes a pixel unit and a pixel readout circuit. The pixel unit includes an image pixel array including a plurality of image pixel columns, respectively; a first reference pixel array including a plurality of first reference pixel columns; and a bias circuit, coupled to the image pixel columns for generating a plurality of column sensing signals, coupled to the first reference pixel columns for generating a plurality of first reference signals, and further for generating a first average reference voltage signal according to the plurality of first reference signals. The pixel readout circuit generates a plurality of reset values and a plurality of sampling values according to the column sensing signals and the first average reference voltage signal, wherein the plurality of reference pixel rows is less than the plurality of image pixel rows.

Abstract: A projective compression scheme for an n-dimensional data array makes use of at least n+1 compression maps in order to maximize the ability to resolve ambiguities. The invention also relates to hardware implementations of the projective compression scheme, and in particular to front end circuits that allow for a compressive readout.

Abstract: A counting device includes a control unit sutable for generating a control signal including a first control signal and a second control signal, a first operation unit suitable for performing a logic operation for pixel signals of a pixel array and a control signal, wherein pixel signals of used column in the pixel array are transferred by using the first control signal, and pixel signals of unused column in the pixel array are blocked by using the second control signal during a binning mode operation, a second operation unit suitable for performing a logic operation for a counter clock and an output signal of the first operation unit, and a counting unit suitable for counting an output signal of the second operation unit.

Abstract: Certain embodiments provide a solid-state image pickup device including a first pixel, a second pixel, and an output circuit. The first pixel has a first photodiode and a first microlens that is formed above the first photodiode. The second pixel has a second photodiode and a second microlens which is formed above the second photodiode and is smaller than the first microlens. Further, the second pixel has a sensitivity of 1/n times of the first pixel and has a photoelectric conversion period of n times of the first pixel. The output circuit outputs a differential signal of a difference between a first detection signal based on a charge amount of the first signal charge and a second detection signal based on a charge amount of the second signal charge.

Abstract: A solid-state imaging device includes first and second sets of pixels. The first pixels have light reception elements and a discharging unit that discharges charge corresponding to light received by the first pixels. The second pixels have corresponding light reception elements but are covered with a light shielding film. Signals stored in the second light reception elements are read to a next stage when the discharging units corresponding to the first light reception elements are enabled.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: A photoelectric conversion device has pixels arranged in two dimensions. The pixels have a photoelectric conversion unit and a signal reading out unit that reads out a signal generated in the photoelectric conversion unit. The photoelectric conversion device includes first and second pixel groups, and first and second connection sections. Each of the first and second pixel groups has pixels arranged in a predetermined direction. The first connection section electrically connects output nodes of the pixels included in the first pixel group to one another. The second connection section electrically connects output nodes of the pixels included in the second pixel group to one another. The number of output nodes which are electrically connected to one another by the first connection section is different from the number of output nodes which are electrically connected to one another by the second connection section.

Abstract: A CDS circuit includes first capacitors; second capacitors; and a switch arrangement which, in response to a switch control signal, connects the first capacitors in series between a pixel signal output node and a ground to compress the pixel signal and connects the second capacitors in series between a ramp signal output node and the ground to compress the ramp signal, or connects the first capacitors in parallel between the pixel signal output node and a first input node of the comparator and connects the second capacitors in parallel between the ramp signal output node and a second input node of the comparator.

Abstract: In an A/D converter, a ramp unit generates a reference signal that increases or decreases over time. A comparison unit starts a comparison process of comparing an analog signal to the reference signal at a timing related to input of the analog signal and ends the comparison process at a timing at which the reference signal satisfies a predetermined condition with respect to the analog signal. A VCO includes a plurality of delay units having the same configuration and starts a transition process at a timing related to the start of the comparison process. A count unit counts a clock from the VCO. A low-order latch unit latches a low-order logic state, which is a logic state of the plurality of delay units, at a first timing related to the end of the comparison process. A high-order latch unit latches a high-order logic state.

Abstract: An example image sensor includes a plurality of pixels arranged in an array of columns and rows, a row driver, and a control logic circuit. The row driver is coupled to pixels in a row of the array to provide a variable driving voltage to drive transistors included in the pixels of the row. The control logic circuit is coupled to provide one or more control logic signals to the row driver. The row driver adjusts a magnitude of the driving voltage in response to the one or more control logic signals.

Abstract: A solid-state image sensor has a plurality of pixel units, each pixel unit including a plurality of pixels, and a charge-voltage converter shared by the plurality of pixels. The sensor includes a structural portion including a plurality of wiring layers, an interlayer insulating film, and light waveguides configured by embedding, in portions of the interlayer insulating film located above the photoelectric converters, a material having a refractive index higher than that of the interlayer insulating film. A dummy pattern is formed in the structural portion to reduce a difference between a sensitivity of a first pixel and that of a second pixel, which is produced by a difference between a structure in a periphery of the light waveguide arranged above the photoelectric converter of the first pixel and that of the second pixel.

Abstract: To obtain accurate digital data while using a successive approximation system when performing analog-to-digital conversion processing in a plurality of steps, an AD converter includes: a signal generation unit that generates a ramp voltage based on a count signal; a signal conversion unit including a circuit that holds an input signal voltage, a successive approximation capacitance group that outputs bias voltages according to a connection combination of capacitances having different capacitance values, and a unit that compares one of the ramp voltage and the bias voltage with the signal voltage; and a control unit generating a digital signal of the signal voltage based on a comparison result of the bias voltage and the comparison result of the ramp voltage while acquiring data for calibration of the capacitance group based on the connection combination and the ramp voltage.

Abstract: An imaging system includes: an illumination unit that emits illumination light to illuminate a subject; a light receiving unit in which pixels that receive light and photoelectrically convert the received light to generate an electric signal are two-dimensionally arranged; a read unit that sequentially reads the electric signal from the pixels for each horizontal line; and an illumination controller that controls the illumination unit to emit a pulse of the illumination light during a period straddling a read period of the read unit for a first horizontal line and a read period for a second horizontal line which is adjacent to the first horizontal line and which is read immediately after the first horizontal line.

Abstract: A pixel array has a plurality of output units arranged in matrix form and a plurality of A/D conversion units corresponds to the output units. Each of the output units outputs an electric signal based on incident electromagnetic waves. Each of the A/D conversion units converts the electric signal input from the corresponding output unit to a digital signal. A plurality of storage units corresponds to columns of the output units. Each of the storage units holds the corresponding digital signal. A first signal line is configured to supply a driving bias to at least one of the output units and the A/D conversion units. A second signal line is configured to transmit the digital signal from the A/D conversion units to the storage units. The output units are provided between the first signal line and the second signal line.

Abstract: An imaging device causes a signal to be output from a first transfer line via a second transfer unit by a noise signal reading operation and a light-noise sum signal reading operation, the noise signal reading operation resetting a transfer capacitor when a signal of a charge converter is output to the first transfer line after a first transfer unit is turned into an OFF state and the charge converter is reset, and the light-noise sum signal reading operation outputting the signal of the charge converter to the first transfer line after the transfer capacitor resetting unit is turned into an OFF state, the first transfer unit is turned into an ON state, and a charge accumulated by a photoelectric conversion element is transferred.

Abstract: In an image pickup apparatus including first circuits, second circuits, and conversion units, an operation period of the second circuit is shorter than an operation period of the first circuit, and a number of the first circuit arranged in each unit cell is greater than a number of the second circuit arranged in each unit cell.

Abstract: Methods and systems for analog-to-digital conversion applicable to an image sensor, such as a CMOS image sensor, in which pixels can be readout non-destructively, and wherein a non-destructive pixel read may be used to provide a coarse analog-to-digital conversion such that information can be stored, and the stored information is then applied in a fine analog-to-digital conversion during a subsequent actual pixel read.

Abstract: An imaging system for generating flexibly oriented electronic images includes an image sensor having a square pixel array, imaging optics for forming an optical image on at least a portion of the square pixel array, wherein the portion is within an image circle of the imaging optics and includes at least two rectangular sub-portions differing from each other in aspect ratio and/or orientation, and a processing module capable of generating an electronic image from each of the at least two rectangular sub-portions. An imaging method for generating electronic images of flexible orientation, using a square image sensor pixel array, includes forming an optical image on at least a portion of the square image sensor pixel array, selecting, according to a desired orientation, a rectangular sub-portion of the at least a portion of the square image sensor pixel array, and generating a final electronic image from the sub-portion.

Abstract: The focus detection apparatus includes an image pickup part (101-107) including first and second pixels photoelectrically converting first and second images formed by light fluxes passing through different pupil area of an image-forming optical system to produce first and second image signals, a first signal processor (121) performing a first process to smooth the first and second image signals by using mutually different filters, a second signal processor (121) performing a second process to sharpen the first and second image signals by using mutually different filters. A calculating part (121) calculates a defocus amount by using the first and second image signals subjected to the first process when a contrast value is higher than a predetermined value, and calculates the defocus amount by using the first and second image signals subjected to the second process when the contrast value is lower than the predetermined value.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract: An image sensor includes a pixel array, a column signal processor, and a column mismatch compensator. The pixel array outputs a pixel signal from each column line during a pixel measuring time, and outputs a reference signal during a reference measuring time. The column signal processor performs correlated double sampling (CDS) on the reference signal to generate a reference CDS signal, and performs CDS on the pixel signal to generate a pixel CDS signal. The column mismatch compensator compensates the pixel CDS signal based on the reference CDS signal.

Abstract: The present disclosure relates to an imaging element, a control method, and an imaging apparatus that enable an image of a higher image quality to be obtained. An imaging apparatus according to the present disclosure includes a plurality of comparing units that compare analog signals supplied from pixels including photoelectric conversion elements through a vertical signal line with reference signals of ramp waves having different inclinations and output comparison results, a plurality of counters that execute counts until the comparison results are inverted for the different comparing units and output count values as digital data, and a sample-and-hold unit that electrically cuts the vertical signal line and the comparing units and supplies the held analog signals to the comparing units while the comparing units execute the comparisons. The present disclosure can be applied to an imaging element, a control method, and an imaging apparatus.