Abstract: A system and method are utilized to equalize intensity or energy in various diffraction order portions of a patterned beam. The patterned beam is formed using a diffractive patterning device. An attenuator is placed at a pupil of a projection system to attenuate respective diffraction order portions of the patterned beam. The projection device is also used to project the patterned beam onto a target portion of a substrate, after the respective attenuations.

Abstract: An exposure method capable of performing accurate exposure without using a large photomask. The exposure method performs exposure while relatively moving a photomask above a substrate and includes a step of performing position correction of the photomask by performing, on a front side of the photomask relatively moved in a moving direction, image recognition of a pattern prearranged on the substrate such as a line and a black matrix and by correcting deviation of the photomask with respect to the pattern, and a step of checking the position correction of the photomask by performing image recognition of a reference mark arranged on the photomask and by determining whether or not the position correction of the photomask is accurately performed in the step of performing the position correction of the photomask.

Abstract: A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.

Abstract: A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Abstract: Disclosed is a method of modifying of a surface of a substrate of a photolithographic mask for extreme ultraviolet radiation comprising the step of focusing femtosecond light pulses of a laser system onto the substrate so that a plurality of color centers is generated inside the substrate, wherein the color centers are distributed to cause a modification of the substrate surface.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: A part of exposure beam through a liquid (LQ) via a projection optical system (PL) enters a light-transmitting section (44), enters an optical member (41) without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus.

Abstract: An apparatus for moving a stereo imaging lens, includes: a baseplate (1), a LCD displayer (15) for display an image source, a light source device (4) above the LCD displayer (15), and a lens (5) positioned under the LCD displayer (15). A display surface of the LCD displayer (15) is downwardly embedded into a fixing board (3) horizontally mounted on the baseplate (1). The light source device (4) is mounted on the fixing board (3). The lens (5) is embedded in a lens fixing board (10). The lens fixing board (10) is mounted on the baseplate (1) via a sliding device. The present invention further provides a method for digital stereo projection, the image source obtained by digital devices can be processed for stereopictures with the LCD displayer (15) as display device, and thus has high sensitization accuracy.

Abstract: A method for in-situ aberration measurement in an optical imaging system of lithographic tools. According to the method, a reticle pattern is imaged to form an imaged pattern by transmitting beams through a reticle via the optical imaging system. The imaged reticle pattern is shaped to have plural groups of imaged linewidths. The plural groups of imaged linewidths are measured using either of an image sensor, a CD-SEM and a microscope by modifying the intensity distribution at an exit pupil plane of the optical imaging system. The asymmetry and ununiformity of the imaged linewidths are calculated. Aberrations of the optical imaging system are calculated.

Abstract: An overlay mark is described, including a portion of a lower layer having two x-directional and two y-directional bar-like patterns therein, and two x-directional and two y-directional photoresist bars defined by the lithography process for defining an upper layer and surrounded by the bar-like patterns. At least one of the patterning process for defining the lower layer and the above lithography process includes two exposure steps respectively for defining a first device area and a second device area. When the patterning process includes two exposure steps, one x-directional and one y-directional bar-like patterns are defined simultaneously and the other x-directional and the other y-directional bar-like patterns are defined simultaneously. When the lithography process includes two exposure steps, one x-directional and one y-directional photoresist bars are defined simultaneously and the other x-directional and the other y-directional photoresist bars are defined simultaneously.

Abstract: A system for improving substrate critical dimension uniformity is described. The system includes an exposing means for exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits of focus ({Fj}) and exposure dose ({Ek}) for each of the first plurality of substrates to form a plurality of perturbed wafers. A measuring means is provided for measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers. An averaging means is provided for averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map. A second measuring means is provided for measuring a sidewall angle of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers.

Abstract: A system and method of calculating estimated image profiles. The system and method includes providing lens characteristic data and performing simulation calculations for various levels of aberration components using the lens characteristic data. A response surface functional relation is built between selected variables of the lens characteristics, in particular the lens aberration components, and the Image Profile using the simulation calculations. Evaluation is then performed on the arbitrary specified aberration values of a lens in relation to the response surface functional relations to provide a calculated estimate of the Image Profile for the specified aberration values. A machine readable medium and exposure apparatus are also provided.

Abstract: There is provided an optical imaging device, in particular for microlithography, comprising at least one optical element and at least one holding device associated to the optical element (109), wherein the holding device holds the optical element and a first part (109.1) of the optical element contacts a first atmosphere and a second part (109.2) of the optical element at least temporarily contacts a second atmosphere. There is provided a reduction device at least reducing dynamic fluctuations in the pressure difference between the first atmosphere and the second atmosphere.

Abstract: Embodiments of the invention relate to a mirror (30). The mirror includes a mirroring surface and a profiled coating layer (32a) having an outer surface, wherein one or more wedged elements are formed by the outer surface with respect to the mirroring surface, and wherein the one or more wedged elements having a wedge angle (ø) in a range of approximately 10-200 mrad. The profiled coating layer may have a curved outer surface. The profiled coating layer may be formed from at least one of the following materials: Be, B, C, P, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Ru, Nb, Mo, Ba, La, Ce, Pr, Pa and U.

Abstract: Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. An optical element of the projection system is adjustable. The lithographic apparatus includes a controller to control the adjustable optical element. The controller is arranged to drive the optical element so as to at least partly compensate for a magnification resulting from a bending of the patterning device.

Abstract: A semiconductor laser driver includes a light detection circuit to detect a quantity of light as a detected light emission intensity and output the detected light emission intensity to the control circuit, and a control circuit to control a light emission intensity for the semiconductor laser based on the detected light emission intensity and on a predetermined light emission intensity setting value. The light detection circuit includes a photoelectric conversion element to convert the quantity of light emitted from the semiconductor laser into an electrical current and output the converted electrical current, a current magnification setting circuit to amplify the electrical current output from the photoelectric conversion element to a predetermined amplified current at one of multiple different predetermined magnifications, a detection resistor to convert the amplified current output from the current magnification setting circuit into a voltage and output the voltage as the detected light emission intensity.

Abstract: A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: A focus test reticle for measuring focus information includes an outer pattern. The outer pattern has a line pattern composed of a light shielding film extending in the Y direction, a phase shift portion provided on a side in the +X direction of the line pattern and formed to have a line width narrower than the line pattern, a transmitting portion provided on a side in the ?X direction of the line pattern and formed to have a line width narrower than the line pattern, a transmitting portion provided on a side in the +X direction of the phase shift portion, and a phase shift portion provided on a side in the ?X direction of the transmitting portion. Focus information of a projection optical system is measured at a high measuring reproducibility and a high measuring efficiency.

Abstract: A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.

Abstract: Focus monitoring for a photolithographic applications is provided by illuminating a photoresist layer with a light beam transmitted through a first binary mask to define a circuit pattern on an underlying substrate and then illuminating the photoresist layer with an unbalanced off-axis light beam transmitted through a second binary mask. The second mask contains a shifting feature configuration in one portion, while another portion blocks light transmission to the chip design area of the photoresist. After development of the photoresist layer, the pattern formed by illumination of the second mask can be compared with a predefined reference feature on the photoresist layer to determine whether a shift, if any, is within acceptable focus limits.

Abstract: An exposure apparatus includes an exposure unit selectively performing exposure on a resist layer with a first laser beam, focused by a lens system, in a pattern including pits and lands arranged in a scanning direction; a detecting unit detecting a reflection of a second laser beam applied through the lens system to the resist layer selectively exposed to the first laser beam, the second laser beam being produced by changing a focal length of the lens system such that the resist layer is prevented from responding thereto; a calculating unit calculating, from a result of the detection, a displacement between center axes of signal waveforms representing beams reflected from first and second portions of the pattern having a smallest width and a larger width, respectively; a setting unit setting the focal length of the lens system to such a value that the displacement is maximal; and a control unit controlling the exposure unit to expose the resist layer to the first laser beam focused with the focal length set

Abstract: In an automatic focus adjusting mechanism, a test sample having a patterned surface is mounted on a mount table, and an light beam passing through a slit formed in a field stop is applied to the patterned surface of the test sample. The light beam reflected from the test sample is split into two segment light beams. Focus adjusting aperture stops having respective apertures formed rhomboid are provided across the optical paths of the segment light beams. The amounts of the segment light beams passing through the rhomboid apertures are detected by light receiving units. Based on the difference between the detected light amounts, the position of the mount table is controlled by the focus adjusting unit.

Abstract: An illumination system for a microlithographic projection exposure step-and-scan apparatus has a light source, a first optical raster element and a second optical raster element. The first optical raster element extends in a first pupil plane of the illumination system and is designed such that the geometrical optical flux of the system is increased perpendicular to a scan direction of the projection exposure apparatus. The second optical raster element extends in a second pupil plane of the illumination system, which is not necessarily different from the first pupil plane, and is designed such that the geometrical optical flux of the system is increased in the scan direction and perpendicular thereto. This makes it possible to improve the irradiance uniformity in a reticle plane.

Abstract: An imaging device in a projection exposure machine for microlithography has at least one optical element and at least one manipulator, having a linear drive, for manipulating the position of the optical element. The linear drive has a driven subregion and a nondriven subregion, which are movable relative to one another in the direction of a movement axis. The subregions are interconnected at least temporarily via functional elements with an active axis and via functional elements with an active direction at least approximately parallel to the movement axis.

Abstract: A wafer edge exposure module connected to a semiconductor wafer track system. The wafer edge exposure module includes a wafer spin device, an optical system, a scanner interface module, and a controller. The wafer spin device supports a wafer for processing. The optical system directs exposure light on a respective edge portion of the wafer simultaneously to create a dummy track on the edge of the wafer. The scanner interface module sends and/or receives dummy edge exposure information from a scanner via a computer network. The controller receives the dummy edge exposure information from the scanner interface module and uses the exposure information to control the optical system.

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Abstract: An exposure apparatus is configured to project a pattern of an original onto a substrate using a projection optical system, thereby exposing the substrate, and comprises a substrate stage configured to hold the substrate, a first detector configured to detect positions of marks on the substrate in a first direction and a second direction orthogonal to each other in a plane perpendicular to an optical-axis direction of the projection optical system, and a controller configured to control the first detector to detect the position of a mark on the substrate while moving the substrate stage substantially along the first direction, and control the first detector to detect the position of a mark on the substrate while moving the substrate stage substantially along the second direction, thereby controlling positioning and exposure of the substrate based on the detection results obtained by the first detector.

Abstract: Optical imaging apparatus are provided having the desired focal properties, which can be manufactured and/or assembled at the wafer level.

Abstract: A projection apparatus for microlithography for imaging an object field includes an objective, one or a plurality of manipulators for manipulating one or a plurality of optical elements of the objective, a control unit for regulating or controlling the one or the plurality of manipulators, a determining device for determining at least one or a plurality of image aberrations of the objective, a memory comprising upper bounds for one or a plurality of specifications of the objective, including upper bounds for image aberrations and/or movements for the manipulators, wherein when determining an overshooting of one of the upper bounds by one of the image aberrations and/or an overshooting of one of the upper bounds by one of the manipulator movements by regulation or control of at least one manipulator within at most 30000 ms, or 10000 ms, or 5000 ms, or 1000 ms, or 200 ms, or 20 ms, or 5 ms, or 1 ms, an undershooting of the upper bounds can be effected.

Abstract: An exposure apparatus includes a projection optical system that projects a pattern image of an original onto a substrate, an original stage that holds and drives the original, a substrate stage that holds and drives the substrate, and a position detecting system that detects the relative positional relationship between position detection marks formed on the original or the original stage and fiducial marks formed on the substrate stage. The position detection marks form a plurality of mark groups arranged in a first direction. Each of the plurality of mark groups has a first mark for measuring the position in the first direction and a second mark for measuring the position in a second direction perpendicular to the first direction. The position detecting system has a plurality of photoelectric conversion elements, which simultaneously detect a plurality of the first marks or a plurality of the second marks.

Abstract: An optical nanolithography system and a method for optical nanolithography using a tilting transparent medium are disclosed. Initially, a pattern is exposed on a substrate at a first location by sending electromagnetic energy through the tilting transparent medium at a first angle. Then, the angle of the tilting transparent medium is changed to a second angle that is different from the first angle. Next, the pattern is exposed on the substrate at a second location by sending electromagnetic energy through the tilting transparent medium at the second angle. The second location is different from and partially overlaps with the first location. Then, the substrate is developed so that overlapping regions of the substrate exposed by the pattern at the first location and at the second location are developed differently from non-overlapping regions of the substrate exposed by the pattern only at the first location or at the second location.

Abstract: Example embodiments are directed to a maskless exposure apparatus that generates and/or corrects exposure data using at least one information of intensity information, central position information, focus information, and/or shape information of a plurality of beams acquired using a measurement optical system, and a control method thereof. The maskless exposure apparatus includes the measurement optical system including a photo sensor and an image sensor, and a control unit configured to generate and/or correct the exposure data using the information acquired by the measurement optical system.

Abstract: A projection objective having a number of adjustable optical elements is optimized with respect to a number of aberrations by specifying a set of parameters describing imaging properties of the objective, each parameter in the set having an absolute value at each of a plurality of field points in an image plane of the projection objective. At least one of the optical elements is adjusted such that for each of the parameters in the set, the field maximum of its absolute value is minimized.

Abstract: An imaging device in a projection exposure machine for microlithography has at least one optical element and at least one manipulator, having a linear drive, for manipulating the position of the optical element. The linear drive has a driven subregion and a nondriven subregion, which are movable relative to one another in the direction of a movement axis. The subregions are interconnected at least temporarily via functional elements with an active axis and via functional elements with an active direction at least approximately parallel to the movement axis.

Abstract: An exposure apparatus includes a driver used for one of height, inclination, curvature-of-field, magnification, and rotation corrections, and a controller configured to control a substrate stage so that it can change an exposure area from a first shot to a third shot even if a moving distance of the substrate stage from the first shot to the second shot is smaller than that from the first shot to the third shot, if a time period necessary for the driver to transfer from a correction state for the first shot to a correction state for the second shot is longer than a time period necessary for the substrate stage to move the exposure area from the first shot to the second shot, and a time period necessary for the driver to transfer from a correction state for the first shot to a correction state for the third shot.

Abstract: A software-controlled maskless optical lithography system uses fluorescence feedback to control an aspect of the lithography, such as light source dose, wavelength, or flashing instances or duration, spatial light modulator (SLM) pattern, an optics parameter, a beamsplitter control parameter, or movement or positioning of a stage carrying a target workpiece, such as a semiconductor wafer.

Abstract: An optical modulating fine aperture array device is provided. The device includes a spatial light modulation unit provided with at least one light capacity cell arranged in a shape of a matrix, wherein each of the light capacity control cells is capable of individually controlling a degree of an inputted light which passing therethrough. A micro-lens array is provided with at least one micro-lens arranged in a shape of a matrix, wherein each of the micro-lenses condenses the light passing through each of the light capacity control cells. A substrate is made of an optical transparent material. The micro-lens array is attached to one side of the substrate. An aperture array is arranged on other side surface of the substrate and provided with at least one fine aperture. An immersion thin film layer is made of an optically transparent dielectric, including and formed to have a predetermined thickness from the aperture array.

Abstract: In a lithographic projection system, a corrective optic in the form of one or more deformable plates is mounted within telecentric image or object space for making one-dimensional or two-dimensional adjustments to magnification. The deformable plate, which can be initially bent under the influence of a preload, contributes weak magnification power that influences the magnification of the projection system by changing the effective focal length in object or image space. An actuator adjusts the amount of curvature through which the deformable plate is bent for regulating the amount of magnification imparted by the deformable plate.

Abstract: A part of exposure beam through a liquid (LQ) via a projection optical system (PL) enters a light-transmitting section (44), enters an optical member (41) without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.

Abstract: A method is provided for positioning at least one target portion of a substrate with respect to a focal plane of a projection system. The method comprises performing height measurements of at least part of the substrate to generate height data, using predetermined correction heights to compute corrected height data for the height data. The method further comprises positioning the target portion of the substrate with respect to the focal plane of the projection system at least partially based on the corrected height data.

Abstract: Provided are a compensating mask, a multi-optical system using the compensating mask, and a method of compensating for a 3-dimensional (3-D) mask effect using the compensating mask. Methods of compensating for a 3-D mask effect using a compensating mask may include generating a first kernel corresponding to a normal mask used for forming a minute pattern, generating a second kernel corresponding to a compensating mask, mixing the first kernel corresponding to the normal mask with the second kernel corresponding to the compensating mask, and generating a multi-optical system kernel corresponding to mixing the first kernel and the second kernel.

Abstract: Disclosed are systems, methods, and computer program products for parallel process focus compensation. Such methods may include three steps. First, a first sensor senses a top surface of a wafer to provide first-sensor data which defines a first topographic map of the first surface of the wafer. The first sensor may be, for example, an air gauge. Second, a second sensor senses the top surface of the wafer in parallel with the first sensor to provide second-sensor data which defines a second topographic map of the first surface of the wafer. The second sensor may be, for example, an optical sensor or a capacitance sensor. Third, a calibration module calibrates focus-positioning parameters of an exposure system based on the first- and second-sensor data. The calibration module may be embodied in hardware, software, firmware, or a combination thereof.

Abstract: A focus sensor comprises a confocal sensor. Within the confocal sensor there are a plurality of aperture plates positioned in front of a plurality of detectors. Rather than a conventional pinhole aperture shape there is a central aperture surrounded by a plurality of outer aperture portions.

Abstract: An exposure apparatus includes: a first moving body, which comprises a guide member that extends in a first direction, that moves in a second direction, which is substantially orthogonal to the first direction; two second moving bodies, which are provided such that they are capable of moving in the first direction along the guide members, that move in the second direction together with the guide member by the movement of the first moving body; and a holding member, which is detachably supported by the two second moving bodies and is capable of holding the object and moving with respect to the two second moving bodies. The second moving bodies include a first drive part and a second drive part that are independently controllable.