Abstract: A data storage method for a data storage device is provided. The data storage method includes steps of: determining whether a power drop/loss event occurs; when the power drop/loss event is determined to have occurred, recording a voltage level of a charge storage device, wherein the charge storage device provides power to the data storage device during the power drop/loss event; determining whether the charge storage device is operating normally according to the recorded voltage level of the charge storage device; and when the charge storage device is determined to be not operating normally, configuring the data storage device to enter a safe operation mode. A data storage device is also provided.

Abstract: An apparatus and method are provided for implementing write assist with boost attenuation for static random access memory (SRAM) arrays. The apparatus includes a memory array comprising a plurality of SRAM cells. The apparatus further includes a write driver connected to each of a differential pair of bit lines in each of the plurality of SRAM cells of the memory array. The apparatus further includes a write assist attenuation circuit connected to the write driver, the write assist attenuation circuit comprising a clamping device configured to modify a control signal as a function of supply voltage and process to attenuate an amount of boost applied to pull one of the bit lines below ground in an active phase of a write cycle.

Abstract: A voltage trimming circuit includes a comparator, a code generator, nonvolatile storage device, a switch circuit, and a voltage generator. The comparator compares a reference voltage with a feedback voltage. The code generator generates a plurality of trimming codes for trimming the feedback voltage based on the comparison result of the comparator. If the feedback voltage is less than the reference voltage, the code generator adjusts up codes to increase the feedback voltage, from among the plurality of trimming codes and maintains down codes to decrease the feedback voltage, from among the plurality of trimming codes at an initial value. If the feedback voltage is greater than the reference voltage, the code generator adjusts the down codes and maintains the up codes at an initial value.

Abstract: The present disclosure provides a dynamic random access memory (DRAM) and a method of operating the same. The DRAM includes a storage area and a control device. The storage area includes a memory row. The control device is configured to selectively allow the memory row to be eligible for a row-hammer refresh according to temperature of the DRAM.

Abstract: MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate of a MIS capacitor. A metal layer forms a second capacitor plate that is separated from the first plate by a high-k capacitor dielectric layer formed directly on the highly doped fins. Contacts are electrically connected to the capacitor plates. A highly doped implantation layer having a conductivity type opposite to that of the highly doped region provides electrical isolation within the structure.

Abstract: Some embodiments include a memory array having a series of bitlines. Each of the bitlines has a first comparative bitline component and a second comparative bitline component. The bitlines define columns of the memory array. Memory cells are along the columns of the memory array. Capacitive units are along the columns of the memory array and are interspersed amongst the memory cells. The capacitive units are not utilized for data storage during operation of the memory array, but rather are utilized for reducing parasitic capacitance between adjacent bitlines.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The BMC structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (TiO2), strontium titanate (SrTiO3), or a binary metal oxide. The BMC structure may include a conductive metal oxide in series with an amorphous layer of a low bandgap material. The low bandgap material may comprise a semiconductor material with a bandgap energy (Eg) less than 1.0 eV. The improved BMC structure may be used for providing multi-level memory elements within a three dimensional memory array.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include dummy wordline circuitry having a dummy wordline driver coupled to multiple dummy wordline loads via a dummy wordline. The integrated circuit may include demultiplexer circuitry coupled to a first path of the dummy wordline between the dummy wordline driver and the multiple dummy wordline loads. The integrated circuit may include multiplexer circuitry coupled to a second path of the dummy wordline between the multiple dummy wordline loads and a dummy bitline load. The demultiplexer circuitry and the multiplexer circuitry may be controlled with one or more selection signals to select at least one of the multiple dummy wordline loads.

Abstract: A memory device includes a memory array of a set of memory cells. Each memory cell of the set of memory cells includes at least one transistor and at least one capacitor. The memory array includes at least one programmed memory cell. The programmed memory cell is selectively programmed by applying hot-carrier injection (HCI) to a transistor of the programmed memory cell. The programmed memory cell may provide an indication of pattern data that may be used to facilitate functionality such as data encryption, data decryption, implementation of a particular memory device operation mode, and/or machine-implemented instructions.

Abstract: Some embodiments include a device having an array of memory cells, a memory control unit at least partially under the array, row decoder circuitry in data communication with the memory control unit, and column decoder circuitry in data communication with the memory control unit. Some embodiments include a device having an array of memory cells, row decoder circuitry and column decoder circuitry. One of the row and column decoder circuitries is within a unit that extends at least partially under the array of memory cells and the other within a unit that is laterally outward of the array of memory cells.

Abstract: A memory circuit capable of being quickly written in data includes a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. Each segment of the plurality of segments includes a plurality of bit line groups, and each bit line group of the plurality of bit line groups corresponds to a pre-charge line. When a predetermined signal is enabled, a potential is written into memory cells of the each segment corresponding to the each bit line group through the pre-charge line and the each bit line group.

Abstract: Apparatus and methods for reducing minority carriers in a memory array are described herein. Minority carriers diffuse between ON cells and OFF cells, causing disturbances during write operation as well as reducing the retention lifetime of the cells. Minority Carrier Lifetime Killer (MCLK) region architectures are described for vertical thyristor memory arrays with insulation trenches. These MCLK regions encourage recombination of minority carriers. In particular, MCLK regions formed by conductors embedded along the cathode line of a thyristor array, as well as dopant MCLK regions are described, as well as methods for manufacturing thyristor memory cells with MCLK regions.

Abstract: A normally-off state of an OS transistor is maintained or an on-state current thereof is increased without additionally generating a positive potential or a negative potential. When data is written to a node connecting an OS transistor and a capacitor, a potential supplied to the other side of the capacitor is set to an L level, and when the data is retained, the potential is switched from the L level to an H level. In addition, a power switch for a volatile memory circuit is provided on a low power supply potential side so that the supply of a power supply voltage can be stopped. Accordingly, at the time of data retention, a source and a drain of the OS transistor can be set at a high potential, whereby the normally-off state can be maintained and the on-state current can be increased.

Abstract: The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.

Abstract: The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors.

Abstract: In an approach to activating at least one memory core circuit of a plurality of memory core circuits in an integrated circuit, one or more computer processors activate a clock signal of a currently selected memory core circuit. The one or more computer processors activate the clock signal of a previously selected memory core circuit to allow the previously selected memory core circuit to be set to a deselected operating mode. The one or more computer processors forward an output bit generated by a memory core circuit selected from a plurality of memory core circuits to a multiplexed bit line.

Abstract: Techniques for implementing a storage array write driver with a reduced-power boost circuit. An apparatus may include a bit cell configured to store data, a bit line circuit coupled to convey data to the bit cell, a write driver circuit configured to transmit write data to the bit cell via the bit line circuit, and a boost circuit that is distinct from the write driver circuit. The boost circuit may be selectively coupled to drive the bit line circuit below a ground voltage dependent on activation of a boost signal and the write data being in a logic low state. The boost circuit may also be coupled to the bit line circuit at a location that is closer to the bit cell than to the write driver circuit, and may be sized to discharge the bit line circuit without being sized to discharge internal capacitance of the write driver.

Abstract: A structure includes a write bit switch device which includes a plurality of bit switch devices positioned at different positions of a memory cell array, and which is configured to enable write operations at a specified number of cells per bit line using a strapped bit line on a selected column of the memory cell array.

Abstract: Techniques for improving the security of nonvolatile memory such as magnetic random access memory (MRAM) are provided. In one aspect, a method of operating a nonvolatile memory chip is provided. The method includes: overwriting data stored on the nonvolatile memory chip automatically upon the nonvolatile memory chip being powered on. For example, all bits in the nonvolatile memory chip can be written to either i) a predetermined data state (e.g., a logic 1 or a logic 0) or ii) a random data state. A system is also provided that includes: a nonvolatile memory chip; and a writing circuit configured to overwrite data stored on the nonvolatile memory chip automatically upon the nonvolatile memory chip being powered on.

Abstract: According to one embodiment, a memory device is provided including a plurality of data word memories, a test controller configured to, for each data word memory, read a data word stored in the data word memory, check the read data word to detect an error of the memory device, determine a complementary data word of the data word, store the complementary data word in the data word memory, read the complementary data word from the data word memory and check the read complementary data word to detect an error of the memory device.

Abstract: Described is an apparatus for a hybrid eDRAM and MRAM memory cell comprising: a capacitor having a first terminal and a second terminal; a first transistor having a gate terminal coupled to a first word line (WL), a source/drain terminal coupled to bit line (BL), and drain/source terminal coupled to the first terminal of the capacitor; a resistive memory element having a first terminal and a second terminal, the first terminal of the resistive memory element device coupled to the first terminal of the capacitor; and a second transistor having a gate terminal coupled to a second WL, a source/drain terminal coupled to source line (SL), and drain/source terminal coupled to the second terminal of the resistive memory element device.

Abstract: Disclosed is a physical unclonable function generator circuit and method. In one embodiment, a physical unclonable function (PUF) generator includes: a PUF cell array comprising a plurality of bit cells, wherein each of the plurality of bit cells comprises at least two inverters, at least one floating capacitor, at least two dynamic nodes, wherein the at least one floating capacitor is coupled between a first inverter at a first dynamic node and a second inverter at a second dynamic node; a PUF controller coupled to the PUF cell array, wherein the PUF controller is configured to charge the first dynamic nodes through the respective first inverters in the plurality of bit cells; and a finite state machine coupled to the PUF cell array configured to determine voltage levels on the second dynamic nodes through the respective second inverters in the plurality of bit cells to determine first logical states of the plurality of bit cells at at least one sampling time and generate a PUF signature.

Abstract: A memory device may include a plurality of memory cells; one or more backup memory cells; a test circuit suitable for performing a backup operation and a test operation to a test target cell selected among the plurality of memory cells; and a control circuit suitable for accessing the backup memory cells instead of the test target cell during the performance of the test operation after completion of the backup operation for the selected test target cell, wherein, during the backup operation, the test circuit controls the control circuit to copy an original data of the test target cell to a corresponding backup memory cell selected among the backup memory cells, and wherein, during the test operation, the test circuit determines whether the test target cell is a pass or a fail.

Abstract: According to one embodiment, a memory device includes a memory cell; and a first circuit configured to perform first read for the memory cell and generate a first voltage, write first data to the memory cell that has undergone the first read, perform second read for the memory cell to which the first data written and generate a second voltage, generate a first current based on the first voltage, generate a second current based on the second voltage, and add a third current to one of the first current and the second current, thereby determining data stored in the memory cell at the time of the first read.

Abstract: A method of refreshing a memory is disclosed. The method includes accessing from active memory an active memory map. The active memory map is generated by software and identifies addresses corresponding to the active memory and associated refresh criteria for the addresses. The refresh criteria are evaluated for a portion of the active memory, and an operation initiated to refresh a portion of the active memory is based on the refresh criteria.

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Before reading a memory cell, the voltage on an access line of the memory cell may be initialized to a value associated with the threshold voltage of a switching component in electronic communication with the memory cell. The voltage may be initialized by reducing the existing voltage on the access line to the value. The switching component or an additional pull down device, or both, may be used to reduce the voltage of the access line. After the access line has been initialized to the value, the read operation may be triggered.

Abstract: A retention circuit provided in a logic circuit enables power gating. The retention circuit includes a first terminal, a node, a capacitor, and first to third transistors. The first transistor controls electrical connection between the first terminal and an input terminal of the logic circuit. The second transistor controls electrical connection between an output terminal of the logic circuit and the node. The third transistor controls electrical connection between the node and the input terminal of the logic circuit. A gate of the first transistor is electrically connected to a gate of the second transistor. In a data retention period, the node becomes electrically floating. The voltage of the node is held by the capacitor.

Abstract: Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

Abstract: A semiconductor memory device includes a charge storage element, a read transistor, and a write transistor. The charge storage element is for preserving a first data voltage. The read transistor has a first terminal coupled to the charge storage element, a second terminal coupled to a read bit line, and a control terminal coupled to a read word line. The write transistor has a first terminal coupled to the first terminal of the read transistor, a second terminal coupled to a write bit line, and a control terminal coupled to a write word line. The semiconductor memory device is able to perform a read operation and a write operation to the charge storage element simultaneously through the read transistor and the write transistor.

Abstract: At least one method, apparatus and system disclosed involves hard-coding data into an integrated circuit device. An integrated circuit device provided. Data for hard-wiring information into a portion of the integrated circuit device is received. A stress voltage signal is provided to a portion of a transistor of the integrated circuit device for causing a dielectric breakdown of the portion of the transistor for hard-wiring the data.

Abstract: A memory interface circuit includes a plurality of receivers and a signal detector. The plurality of receivers are arranged for receiving at least a clock signal and a plurality of command signals from a memory controller, respectively. The signal detector is arranged for detecting whether the memory interface circuit receives the clock signal or not to generate a detection result to enable or disable the plurality of receivers.

Abstract: The memory cell includes a read selection transistor, a program selection transistor, and an anti-fuse capacitor. The read selection transistor has a first terminal coupled to a bit line, a second terminal, and a control terminal coupled to a read word line. The program selection transistor has a first terminal coupled to the second terminal of the read selection transistor, a second terminal coupled to a high voltage control line, and a control terminal coupled to a program word line. The anti-fuse capacitor has a first terminal coupled to the second terminal of the read selection transistor, and a second terminal coupled to a low voltage control line.

Abstract: An interconnect structure includes a lower interconnect layer, an intermediate interconnect layer, and an upper interconnect layer. First and second conductive lines in the lower interconnect layer extend generally in a first direction over a memory array region, and additional lower conductive lines in the lower interconnect layer extend generally in the first direction over a peripheral region. A first plurality of conductive line segments in the intermediate interconnect layer extend generally in the first direction over the memory array region, and additional intermediate conductive line segments in the intermediate interconnect layer extend generally in a second, perpendicular direction over the peripheral region. A second plurality of conductive line segments in the upper interconnect layer extend generally in the first direction over the memory array region, and additional upper conductive line segments in the upper interconnect layer extend generally in the first direction over the peripheral region.

Abstract: A memory device includes a memory array of a set of memory cells. Each memory cell of the set of memory cells includes at least one transistor and at least one capacitor. The memory array includes at least one programmed memory cell. The programmed memory cell is selectively programmed by applying hot-carrier injection (HCI) to a transistor of the programmed memory cell. The programmed memory cell may provide an indication of pattern data that may be used to facilitate functionality such as data encryption, data decryption, implementation of a particular memory device operation mode, and/or machine-implemented instructions.

Abstract: Methods of operating a memory include receiving a plurality of digits of data, determining a value of the plurality of digits of data, and selecting a function to represent the value of the plurality of digits of data. The selected function is a function of a cell number of each memory cell within a grouping of memory cells. The methods further include determining a desired threshold voltage of a particular memory cell of the grouping of memory cells corresponding to the value of the selected function for the cell number of the particular memory cell, and programming the particular memory cell to its desired threshold voltage.

Abstract: A method of operating an electronic device includes: precharging a fuse read node to an intermediate voltage less than an input voltage, wherein the fuse read node connects a fuse array and a fuse read circuit, the fuse array including a fuse cell configured to store information and the fuse read circuit configured to read the stored information; connecting the fuse cell to the fuse read node for reading the information; and determining, with the fuse read circuit, the information from the fuse cell based on changes to the intermediate voltage at the fuse read node.

Abstract: Interaction based charging control is described. In an embodiment, a device is described, comprising: an interface configured to receive a charging power from another device; a sensor configured to detect interaction of the device; a charging controller configured to reduce the charging power in response to the detected interaction; in response to the reduced charging power, a processor configured to allow more processing power for the device. In other embodiments, a device comprising a sensor configured to detect a temperature of the device, and a method are discussed.

Abstract: Embodiments of a row address cache circuit are disclosed that may allow the determination the number of times a row address is used to access a dynamic memory. The row address cache circuit may include a memory, first and second pluralities of counters, and a control circuit. The control circuit may be configured to receive a row address and store the row address in an entry of the memory when the row address has not been previously stored. When the row address has been previously stored in an entry of the memory, the control circuit may be configured to change a value of a counter of the first plurality of counters corresponding the entry. The control circuit may be further configured to change a value of each counter of the second plurality of counters after a pre-determined time interval has elapsed, and initiate a refresh of the dynamic memory.

Abstract: A data storage device includes a controller and a memory die. The controller includes a host interface and a memory interface. A method includes receiving a message from a host device via the host interface. The message indicates that the host device is to perform a first adjustment process associated with the host interface. The method further includes performing a second adjustment process associated with the memory interface in response to receiving the message indicating that the host device is to perform the first adjustment process.

Abstract: In one embodiment, an integrated circuit comprises a volatile memory including a plurality of memory cells, a detector to detect one or more in-specification conditions, and a discharger, external to the volatile memory, to discharge electric charge stored in the integrated circuit, including electric charge stored in the volatile memory, unless the detector detects the one or more conditions.

Abstract: Apparatuses and methods are disclosed that in ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: A method of assembling products selects first and second planar substrates, each having a plurality of articles respectively positioned on each substrate, which articles are to be assembled together. While one of the substrates moves at a generally linear speed, the other substrate moves in a spiral fashion through an assembly location such as a nip roller to thereby match their respective speeds, resulting alignment of respective articles for assembling of the two different types of articles together from two substrates having differing pitch placement of their respective articles thereon. The non-spiraling substrate is a plurality of flights of articles in an array, and the other substrate has a block of the other articles. Typically, the number of flights corresponds to the number of articles in the block.

Abstract: A system and method for providing efficient power, performance and stability tradeoffs of memory accesses are described. A computing system uses a memory for storing data, and a processing unit, which generates access request. The memory stores data and includes a dummy cell between a first region and a second region. The first region and the second region operate with at least one of two operating states such as an awake state and a sleep state. The dummy cell uses two ground connections to support two separate ground references. In one example, a first ground reference is zero volts and a second ground reference is a floating node. In another example, the first ground reference is a value shared by one of the two regions and the second ground reference is the floating node.

Abstract: A semiconductor memory apparatus may include a write data bus inversion unit and a write data polarity change unit. The write data bus inversion unit may invert a level of an input data and may generate an inversion change data when a majority of the input data have a predetermined level. The write data polarity change unit may invert a level of the inversion change data based on a write signal and a first bank address signal and generate a polarity change data.

Abstract: Techniques are disclosed for dynamic random access memory (DRAM) cell. The DRAM cell comprises a first bit line and a first complementary bit line, a storage capacitor having a first node coupled with the first complementary bit line, and a transistor selectable by a word line to couple a second node of the storage capacitor to the first bit line, wherein a voltage potential across the first bit line and the first complementary bit line when the transistor is selected is indicative of a bit of data.

Abstract: A memory apparatus may include a bit line sense-amplifier coupled to first and second bit lines; a first precharge unit suitable for coupling the first and second bit lines in response to a bit line equalization signal; a sense-amplifier power control unit suitable for providing a plurality of powers to the bit line sense-amplifier in response to a power control signal; and a second precharge unit suitable for individually changing each voltage level of the first and second bit lines based on a precharge control signal.

Abstract: When data blocks of a data seglet are compressed using a shared dictionary and when the requested data block (or blocks) do not include the last data block of the data seglet, an optimization in the read path may involve decompressing a certain portion of the data seglet from a starting position of the data seglet to a decompression endpoint of the data seglet, but not including the portion of the data seglet following the decompression endpoint. Such technique may involve the storing of a mapping that maps, for each data block within the data seglet, an identifier of the data block to a decompression endpoint that indicates a portion of the data seglet that includes the data block.

Abstract: One embodiment of the present invention sets forth a method for accessing non-contiguous locations within a DRAM memory page by sending a first column address command to a first DRAM device using a first subset of pins and sending a second column address command to a second DRAM device using a second subset of repurposed pins. The technique requires minimal additional pins, space, and power consumption. Further, sending multiple column address commands allows for increased granularity of DRAM accesses and therefore more efficient use of pins. The technique for accessing non-contiguous locations within a DRAM memory page.

Abstract: An embodiment of a receiver apparatus may include high pass components to pass high frequency components of an input signal, low pass components to pass low frequency components of the input signal, and an amplifier communicatively coupled to the high pass components and the low pass components to amplify respective signals passed by the high pass components and the low pass components, wherein the low pass components include a level shifter to shift a common mode voltage level of the input signal to a switch threshold voltage for the amplifier in accordance with at least two different types of memory devices. Other embodiments are disclosed and claimed.