Abstract: According to the embodiment, a memory controller includes a memory interface which performs a first reading using a read voltage including a hard decision voltage and a second reading using a plurality of read voltages within a predetermined voltage range, a shift value calculation unit which calculates an update value of the hard decision voltage based on the reading result by the second reading, a storage unit which stores the update value, a decoding unit which performs decoding based on likelihood information according to the reading result, and a controller which makes the memory controller perform the first reading, makes the decoding unit perform the decoding by using the likelihood information using a reading result by the second reading when the decoding has been failed, and makes the memory controller perform the first reading by using the update value when the corresponding update value is stored in the storage unit.

Abstract: Various embodiments of the present disclosure provide a method of operating a non-volatile memory and an electronic device adapted to the method. When the possibility that power will be cut off in the electronic device is low or almost zero, the provision operation (e.g., an LSB backup) is interrupted which is capable of preventing data from being erased against a situation where the power is cut off. The method of managing a storage device includes: transferring an initialization command to a non-volatile memory functionally connected to a storage device; transferring a command for interrupting or executing an LSB backup to the storage device controller included in the non-volatile memory; and interrupting or executing, by the storage device controller, the LSB backup according to the LSB backup interrupt or execute command. Other modifications are provided.

Abstract: A control method of a solid state storage device includes the following steps. Firstly, a block of a memory cell array is checked. Then, a judging step is performed to judge whether a data storage time period of the block exceeds a threshold period. If the data storage time period of the block exceeds the threshold period, the block is tagged or a data of the block is refreshed.

Abstract: Apparatuses, systems, methods, and computer program products for programming an unprogrammed upper page based on lower page programming are disclosed. An apparatus includes a non-volatile storage device and a controller. A controller includes a data component that is configured to receive a write request for a first page of a set of multi-level storage cells of a non-volatile storage device. A set of multi-level storage cells includes a first page and a second page. A controller includes a page component that is configured to determine that a write request does not comprise data for at least a portion of a second page of a set of multi-level storage cells. A controller includes a write component that is configured to program at least a portion of a second page of a set of multi-level storage cells with data of a first page of a set of multi-level storage cells.

Abstract: Disclosed are a semiconductor memory device and a method of operating the same. The semiconductor memory device includes a memory cell array including a plurality of memory cells which are programmed to a plurality of program states, a peripheral circuit configured to perform a program operation on the memory cell array, and a control logic configured to control the peripheral circuit to divide the plurality of program states into two or more program groups and sequentially program the two or more program groups during the program operation, wherein the control logic controls the peripheral circuit to simultaneously program the memory cells which are to be programmed to program states included in the same program group among the plurality of memory cells.

Abstract: A nonvolatile memory device includes a target memory area; a control unit configured to apply a program pulse one or more times to the target memory area in response to a program command, until program verification passes; and a status storage unit configured to store a program status information for the target memory area, wherein the control unit is supplied with a first operation voltage, and the status storage unit is supplied with a second operation voltage.

Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

Abstract: Disclosed are a memory device, including: a memory block including a plurality of cell strings; a peripheral circuit configured to set voltages for a program operation of selected memory cells in the cell strings, and program the selected memory cells by using the set voltages; and a control circuit configured to control the peripheral circuit so that the selected memory cells are programmed in response to a program command, and increase a channel voltage of non-selected cell strings including non-selected memory cells while the selected memory cells are programmed, and an operating method thereof.

Abstract: A memory device includes a memory array including a number of memory cell strings, a number of bit lines, a number of pre-charge circuits coupled to the memory cell strings, and a number of sense amplifier circuits coupled to the memory cell strings through the bit lines. Each memory cell string includes at least one first select transistor, a second select transistor and at least one memory cell. Each bit line includes a third select transistor, and is coupled to a memory cell string. During a pre-charging stage, the pre-charge circuits provide a first voltage to pre-charge the memory cell strings. During a programming stage, for the memory cell strings to be inhibited, the sense amplifier circuits provide a second voltage lower than the first voltage. For the memory cell strings to be programmed, the sense amplifier circuits provide a third voltage lower than the second voltage.

Abstract: A charge pump circuit includes a first capacitor and a second capacitor to which respective pulse signals are input; a first transistor including a source connected to a voltage input terminal, a drain connected to the first capacitor and a gate connected to the second capacitor; a second transistor including a source connected to the voltage input terminal, a drain connected to the second capacitor and a gate connected to the first capacitor; and a potential fixing circuit provided between a first node that is a connection node of the first transistor and the first capacitor, and a second node that is a connection node of the second transistor and the second capacitor. The potential fixing circuit fixes a potential of the first node to a potential according to a potential of the second node.

Abstract: A NAND flash memory suppresses an influence caused by FG coupling and has high reliability. The flash memory of the invention includes: a memory array formed with a plurality of NAND strings; a row selection unit selecting rows of the memory array; and a bit line selection circuit (200) selecting even-numbered pages or odd-numbered pages of the selected row. The even-numbered pages (BL0, BL1, BL4, BL5) include a plurality of pairs of adjacent bit line pairs, the odd-numbered pages (BL2, BL3, BL6, BL7) include a plurality of pairs of adjacent bit line pairs, and the bit lines of the even-numbered page and the bit lines of the odd-numbered page are arranged alternately.

Abstract: Read threshold voltage tracking techniques are provided for multiple dependent read threshold voltages using syndrome weights.

Abstract: Aspects of the disclosure provide a method and a data storage apparatus for storing fractional bits per cell with low-latency read per page. In various embodiments, the memory cells are configured to store a fractional number of bits per cell using a multi-page construction with reduced number of read per page as compared to a single page construction. The data storage apparatus store data in a plurality of non-volatile memory (NVM) cells configured to store information in a plurality of pages, wherein each of the NVM cells is programmable to one of L program states for representing a fractional number of bits. The data storage apparatus reads a first part of the data from a first page of the plurality of pages by applying M number of read voltages to the plurality of NVM cells, wherein the M number of read voltages is less than L?1 program states.

Abstract: A first write operation is received. The first write operation includes a SET operation. The SET operation is configured to place a cell of the non-volatile memory (NVM) device in a relatively low-resistance state. A second write operation is received. A first electrical pulse is applied to a first cell of the NVM device. The first electrical pulse is applied to place the first cell in the relatively low-resistance state. A second electrical pulse is applied to a second cell of the NVM device. The second electrical pulse is applied before the first electrical pulse has concluded. The second cell and the first cell are both within a single tile of the NVM device.

Abstract: A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Abstract: A nonvolatile memory system, a nonvolatile memory controller and a method for reducing latency of a memory controller are disclosed. The nonvolatile memory system includes a read circuit that performs background reads of an indicator page of each block to identify outlier blocks. A background reference positioning circuit performs background reads of representative pages of the outlier block at threshold voltage offsets to identify sets of updated threshold voltage offset values. Upon endurance events, retention timer events and read disturb events at a closed block background reads are performed of representative pages of the closed block at threshold voltage offsets to identify sets of updated threshold voltage offset values.

Abstract: A flash memory device includes a flash memory having a plurality of blocks, each block having a plurality of pages, and a control circuit configured to receive a command, decode the received command to determine whether the command is a last written page command, upon determining that the command is the last written page command, select a block of the plurality of blocks, and perform a number of iterations. Each of the iterations includes obtain a measurement of a signal level of a page in the selected block, compare the signal level with a predetermined threshold value, determine whether the page is an erased page based on a comparison result, upon determining that the page is an erased page, save an address associated with the erased page and output the address of the erased page, and upon determining that the page is not an erase page, perform a next iteration.

Abstract: A memory system may be configured to perform immediate folding of data from a low storage density area to a high storage density area. A low storage density target area may be monitored, and when a capacity of the low storage density target area reaches a threshold level, data stored in the low storage density target area may be folded to an associated high storage density target area. The memory system may utilize a pointer system to manage the folding of data. The pointer system may also be utilized for read operations in order to avoid updating address mapping tables for both the low storage density and the high storage density areas.

Abstract: An apparatus comprises a controller to retrieve data from a non-volatile memory, and an error correction module operable on the controller to read a memory cell of the non-volatile memory at a first set of sense conditions comprising a multiplicity of sense conditions. The error correction module may be further operable to set a first set of bits in an encoded output, the first set of bits comprising a logical state bit to indicate a logical state of the memory cell and one or more additional bits in the encoded output to indicate accuracy of the logical state bit based upon results of the read at the first set of sense conditions, the first set of sense conditions comprising a greater number than that of the first set of bits.

Abstract: A nonvolatile memory device includes a first cell string including a first dummy cell and connected to a selected string select line, a second cell string including a second dummy cell and connected to the selected string select line, a page buffer circuit configured to select one of the first and second cell strings to read data in a read operation, and a control logic circuit configured to apply a first bit line voltage to a bit line connected to the selected one of the first and second cell strings and a second bit line voltage to a bit line connected to an unselected one of the first and second cell strings in the read operation. The control logic circuit turns off the second dummy cell when the first cell string is selected and turns off the first dummy cell when the second cell string is selected.

Abstract: Memory devices, and methods of operating similar memory devices, include an array of memory cells comprising a plurality of access lines each configured for biasing control gates of a respective plurality of memory cells of the array of memory cells, wherein the respective plurality of memory cells for one access line of the plurality of access lines is mutually exclusive from the respective plurality of memory cells for each remaining access line of the plurality of access lines, and a controller having a plurality of selectively-enabled operating modes and configured to selectively operate the memory device using two or more concurrently enabled operating modes of the plurality of selectively-enabled operating modes for access of the array of memory cells, with each of the enabled operating modes of the two of more concurrently enabled operating modes utilizing an assigned respective portion of the array of memory cells.

Abstract: A read and write control circuit for a flash chip is disclosed which includes a timing control circuit for generating a read and write timing signal for the flash chip, and a first non-volatile memory for storing a plurality of flags corresponding to a plurality of blocks in the flash chip, each of the flags indicating whether a respective one of the blocks that corresponds thereto has been written to normally. Also disclosed is a read and write control method of a flash chip, as well as an AMOLED application circuit having the read and write control circuit for use in an electrical compensation mechanism.

Abstract: Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of a memory cell can shift depending on when the read operation occurs. A command is issued for performing a conditioning operation which helps to transition the memory cells so that their threshold voltages are at predictable levels. In one approach, the conditioning operation is performed by applying a voltage pulse to one or more word lines in response to a trigger, such as detecting that a duration since a last sensing operation exceeds a threshold, detecting that a duration since a last performance of the conditioning operation exceeds a threshold, or a detecting that a read command has been issued. Moreover, the peak power consumption required to perform the conditioning operation can be reduced for various configurations of a memory device on one or more die.

Abstract: A method for storing data multi-level cell (MLC) memory includes receiving data to be stored. The received data is divided into units of x bits, where x is an integer greater than or equal to 3. Each of the units of x bits is stored over a span of y memory cells of the MLC memory. Here, y is an integer greater than or equal to 2. At least one bit of each of the x bits is stored only partially in a first memory cell of the span of y memory cells and the at least one bit is also stored, only partially, in a second memory cell of the span of y memory cells such that the at least one bit cannot be interpreted without reading both the first and second memory cell of the span of y memory cells.

Abstract: The present disclosure includes apparatuses and methods related to hybrid memory management. An example apparatus can include a first memory array, a number of second memory arrays, and a controller coupled to the first memory array and the number of second memory arrays configured to execute a write operation, wherein execution of the write operation writes data to the first memory array starting at a location indicated by a write cursor, and place the write cursor at an updated location in the first memory array upon completing execution of the write operation, wherein the updated location is a next available location in the first memory array.

Abstract: Systems, apparatuses and methods may provide for technology that reads a lower page, one or more intermediate pages and a last page from a set of multi-level non-volatile memory (NVM) cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is substantially similar to an intermediate read time associated with the one or more intermediate pages.

Abstract: A NAND flash memory including a plurality of levels of cells and a plurality of bitlines. Each bitline corresponds to a plurality of program states, the program states include an Erase-state, a highest state and a plurality of middle states, wherein the bitline voltages of the middle states during programming are between the bitline voltage of the Erase-state and the bitline voltage of the highest state during programming, and the bitline voltages of the middle states during programming are different from each other. The bitline program voltages of middle states of a NAND flash memory are controlled, thus a higher initial programming voltage of wordlines can be set without causing over-programming on the middle states of the bitlines. Therefore, program time is saved, and the programming speed is increased to achieve a fast program function.

Abstract: According to one embodiment, three bits stored in one memory cell of a nonvolatile memory correspond to three pages. In first page writing, a threshold voltage becomes within a first or second region base on a bit value. In second page writing, if being within the first region, it becomes within the first or fourth region; and if being within the second region, it becomes within the second or third region. In the third page writing, if being within the first region, it becomes within the first or sixth region; if being within the second region, it becomes within the second or seventh region; if being within the third region, it becomes within the third or eighth region; and if being within the fourth region, it becomes within the fourth or fifth region.

Abstract: A control circuit that controls a memory including a storage region and a redundant region, the control circuit includes a detector that detects a defective block in the memory, and a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme.

Abstract: A method of storing information or data in a nonvolatile memory device with multiple-page programming. The method, in one aspect, is able to activate a first drain select gate (“DSG”) signal. After loading the first data from a bit line (“BL”) to a nonvolatile memory page of a first memory block in response to activation of the first DSG signal during a first clock cycle, the first DSG signal is deactivated. Upon activating a second DSG signal, the second data is loaded from the BL to a nonvolatile memory page of a second memory block. The first data and the second data are simultaneously written to the first memory block and the second memory block, respectively.

Abstract: A memory system includes a nonvolatile memory a controller that controls the nonvolatile memory, and a backup power supply. In response to a detection that power from an external source to the memory system is interrupted, at which time power to the memory system starts to be supplied from the backup power supply, the controller transmits a first command to the nonvolatile memory to change a parameter for a write operation and then transmits a second command to the nonvolatile memory to carry out a write operation, such that the nonvolatile memory carries out the write operation using the changed parameter.

Abstract: The present invention provides a data storage device that includes a flash memory and a controller. The flash memory has a plurality of TLC blocks, wherein each of the TLC blocks includes a plurality of pages. When the data storage device resumes operation after a power-off event, the controller stops writing data into a first TLC block which was undergoing a write operation that had not finished at the time the power-off event occurred, and the controller writes valid data of the first TLC block into a second TLC block after every interval of a first predetermined number of write commands is finished.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode.

Abstract: A memory system may include: a memory device including a plurality of memory dies; and a controller suitable for generating instruction information instructing sequential completion of program operations for the plurality of memory dies in response to a write command and transmitting the write command and the instruction information to the memory device.

Abstract: A first conductive region having a second conductivity type is formed in a first semiconductor over a first dielectric isolation region and having a first conductivity type. A second semiconductor having the first conductivity type is formed over the first conductive region and the first semiconductor. Isolation structures are formed extending through the second semiconductor and the first semiconductor to the first dielectric isolation region, thereby defining a first well of the second semiconductor contained within the isolation structures and a second well of the first conductive region contained within the isolation structures. A charge-storage node is formed over the first well. Source/drain regions having the second conductivity type are formed in the first well adjacent the charge-storage node. A control gate is formed over the charge-storage node. A first contact is formed to the first well. A second contact is formed to the second well through the first well.

Abstract: In one embodiment, an apparatus comprises a memory comprising a first group of memory cells, a second group of memory cells, and a controller to program one or more lower pages of data to the first group of memory cells; store dynamic start voltage information, the dynamic start voltage information indicative of a rate of programming of at least a portion of the first group of memory cells; determine a start program voltage based on the dynamic start voltage information; and apply the start program voltage to the second group of memory cells during a first program pass of a program operation, the program operation to program one or more lower pages of data to the second group of memory cells.

Abstract: A semiconductor memory device includes memory cells, a word line connected to gates of the memory cells, and a control circuit configured to execute a write operation on the memory cells. The write operation includes a first program operation during which a first program voltage is applied to the word line, a first verify operation during which a first verification voltage is applied to the word line to determine whether or not the first program operation passed, a second program operation during which a second program voltage is applied to the word line, and a second verify operation during which a second verification voltage is applied to the word line to determine whether or not the second program operation passed. The control circuit is configured to execute at least one intervening program or verify operation between the first program operation and the first verify operation.

Abstract: A method for biasing read voltage for flash memory in a storage system, performed by the storage system, is provided. The method includes tracking bit flips in a first direction and bit flips in a second direction in data reads of the flash memory in the storage system, based on error correction of the data reads. The method includes comparing or forming a ratio of the bit flips in the first direction to the bit flips in the second direction or the bit flips in one of the first direction or the second direction to a total number of bit flips. The method includes adjusting read voltage level for the flash memory in the storage system, based on the comparing or the forming the ratio.

Abstract: A system and method are disclosed for an event lock storage device. The storage device includes a user partition and an event partition (which may be associated with an event). The storage device receives data from a host device, and stores the data in the user partition. In response to receiving an indication of an event, the storage device may designate the data as part of the event partition. The event partition may include a set of access rules that is different from the user partition, such as more restrictive rules for modification or deletion of a file containing the data.

Abstract: A semiconductor memory device includes a plurality of memory cells, and a control circuit configured perform a multi-bit write operation on the memory cells in response to sequentially received commands including a first command and a second command, which is received after the first command, the first command including first bits to be written respectively in the memory cells and the second command including second bits to be written respectively in the memory cells. The multi-bit write operation includes at least a first write operation including at least one program operation that is initiated after receipt of the first command and prior to the receipt of the second command, and a second write operation that is initiated after receipt of the second command.

Abstract: An operating method for a data storage device may include: determining a displacement value based on section memory cell numbers regarding a plurality of threshold voltage sections divided by a first read voltage and second read voltages; determining an adjustment direction based on the displacement value; adjusting at least one reliability value corresponding to at least one threshold voltage section among the threshold voltage sections, positioned in the adjustment direction from the first read voltage; and performing an error correction operation on data read from memory cells based on the first read voltage, using reliability values corresponding to the threshold voltage sections.

Abstract: Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a conductive line, non-volatile memory cells of a first memory cell type, the non-volatile memory cells coupled in series among each other, and an additional non-volatile memory cell of a second memory cell type coupled to the conductive line and coupled in series with the non-volatile memory cells of the first memory cell type. The second memory cell type is different from the first memory cell type.

Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

Abstract: A data storage device includes a flash memory and a controller. The controller determines whether a first page of the flash memory meets a predetermined condition, and refreshes a block corresponding to the first page when the first page meets the predetermined condition, wherein the predetermined condition includes a voltage distribution of the first page being shifted to a predetermined direction, the predetermined direction being left.

Abstract: A method includes, in one aspect, performing a read operation on a wordline of a memory device, wherein the wordline comprises a plurality of cells that are expected to be in a first state; based on the read operation, identifying one or more of the plurality of cells that are determined to be in a second state that differs from the first state; encoding data using information pertaining to the identified cells to generate a codeword comprising a plurality of bits to be written to the wordline, with at least one of the plurality of bits, which are to be written to at least one of the identified cells, having a value corresponding to the second state; and writing the generated codeword to the wordline.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cells, a word line connected in common to gates of the memory cells, and a control circuit configured to execute a read operation on the memory cells by applying a first read voltage to the word line to determine for each of the memory cells whether or not the memory cell has a threshold voltage that is below the first read voltage and a second read voltage to the word line to determine for each of the memory cells whether or not the memory cell has a threshold voltage that is below the second read voltage. The control circuit determines the first read voltage by applying at least first to third voltages to the word line, and determines the second read voltage based on the first read voltage.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The method of operating a semiconductor memory device may include performing a program operation on a Least Significant Bit (LSB) of a page, and performing a program operation on a flag cell and a Most Significant Bit (MSB) of the page based on an operation of verifying at least one of a plurality of program states. The data stored in the flag cell may be data indicating whether data programmed according to the program operation is LSB data or MSB data.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cells coupled between a common source line and a bit line, and a voltage generator applying operating voltages to word lines coupled to the memory cells or discharging potential levels of the word lines, wherein during a program verify operation, the voltage generator applies a program verify voltage and a pass voltage as the operating voltages to the word lines, and subsequently applies a set voltage to the common source line during a period in which the memory cells are turned on.

Abstract: A process is performed periodically or in response to an error in order to dynamically and adaptively optimize read compare levels based on memory cell threshold voltage distribution. One embodiment of the process includes determining threshold voltage distribution data for a population of non-volatile storage elements, smoothing the threshold voltage distribution data using a weighting function to create an interim set of data, determining a derivative of the interim set of data, and identifying and storing negative to positive zero crossings of the derivative as read compare points.