Abstract: A method for determining a memory window of at least one resistive random access memory cell, the resistive random access memory cell including a high resistance state and a low resistance state, the passage of the resistive random access memory from an initial state among the high resistance state or the low resistance state to another state then the return to the initial state forming a cycle, the method including: measuring the values of the resistances of the high resistance and low resistance states at a given cycle j, j being an integer; determining the memory window to use during the n cycles following the given cycle j, n being an integer, the memory window being calculated by taking into account at least the resistances of the high resistance and low resistance states at the cycle j.

Abstract: Examples herein include techniques for flash page retirement following one or more defects in nonvolatile memory. In some examples, a storage controller may retire a first logical page in response to a first read error, and write data to the one or more NVM devices in a program-erase (P/E) cycle without a dummy page being programmed or generated for the retired first logical page. The storage controller may further retire a second logical page in response to a second read error, wherein the first logical page has a higher order than the second logical page in a same physical memory page.

Abstract: A current reference circuit includes a current source, a first p-channel metal oxide semiconductor (PMOS) transistor having a source coupled to a first supply voltage, a gate, and a drain coupled to the current source, and an n-channel MOS (NMOS) transistor having a drain coupled to a second supply voltage, a gate coupled to the drain of the first PMOS transistor. The current reference circuit also includes a first resistive element having a first terminal coupled to a source of the NMOS transistor and a gate of the first PMOS transistor and a second terminal coupled to a ground potential, a second PMOS transistor having a drain coupled to the first supply voltage, and a second resistive element having a first terminal coupled to the first terminal of the first resistive element and a second terminal coupled to the gate of the second PMOS transistor.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: Devices and techniques for correcting for power loss in NAND memory devices are disclosed herein. The NAND memory devices may comprise a number of physical pages. For example, a memory controller may detect a power loss indicator at the NAND flash memory. The memory controller may identify a last-written physical page and determine whether the last-written physical page comprises more than a threshold number of low-read-margin cells. If the last-written physical page comprises more than the threshold number of low-read-margin cells, the memory controller may provide a programming voltage to at least the low-read-margin cells.

Abstract: Methods, a memory device, and a system are disclosed. One such method includes applying a select pulse to a snapback device of a memory cell. This causes the memory cell to enter a conductive state. Once in the conductive state, the memory cell can be set or reset by a pulse formed from parasitic capacitive discharge from various paths coupled to the memory cell.

Abstract: The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

Abstract: Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.

Abstract: A memory device includes stacked word lines stacked and a semiconductor channel passing through the word lines in a first direction. Memory cells are disposed along the semiconductor channel in the first direction. Each memory cell includes a charge retention film between the semiconductor channel and a respective word line in the plurality of word lines. A controller is connected to the semiconductor channel and the word lines and configured to apply a program voltage during a program operation to a memory cell at a potential that increases in voltage steps, and a voltage increment between the voltage steps decreases during the program operation. The increment voltage is changed by the controller depending on a position of the memory cell along the semiconductor channel in the first direction.

Abstract: A memory device includes a plurality of memory cell transistors, a word line electrically connected to gates of the memory cell transistors, and a control circuit configured to perform programming of the memory cell transistors to a plurality of different threshold voltage ranges in a plurality of loops, each loop including a program operation and a program verification. The different threshold voltage ranges include a first threshold voltage range and a second threshold voltage range that is at a higher voltage than the first threshold voltage range. Further, during the program operation, the control circuit applies a program voltage to the word line, the program voltage increasing for each subsequent loop, an amount of increase of the program voltage when programming to the second threshold voltage range being set in accordance with a number of loops required to complete programming to the first threshold voltage range.

Abstract: Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.

Abstract: Systems, apparatuses, and methods for reaching power targets across different clock domains are described. In various embodiments, a first processor complex and a second processor complex operate while powered by a same, single power plane, but with respective clock domains. When a request is detected to change an operating mode of a particular core from one of the processor complexes to an operating mode which does not provide the worst-case power supply load on the single power plane, an amount of voltage margin to recover from the operational voltage is determined based on the second operating mode prior to granting the request and based on each other core in the complexes operating in respective current operating modes. An operational voltage less the determined voltage margin to recover is assigned to the processor complexes while different clock frequencies are assigned to the processor complexes.

Abstract: A semiconductor memory system and an operating method thereof include a controller configured to perform macro management; and a memory device including Nand pages, counters, a self-management component, and devoted memories, wherein the memory device is coupled and controlled by the controller, the Nand pages contains data corresponding to commands received from the controller, the counters are configured to track operation information corresponding to the Nand pages in accordance with the commands, the devoted memories are configured to record recovery information, and the self-management component configured to perform micro management in accordance at least in part with the operation information or the recovery information.

Abstract: Adaptive read-threshold schemes for a memory system determine read-threshold with the lowest BER/UECC failure-rates while continuing to serve the host-reads with the required QoS. When it is determined that the QoS or other quality metric is not met for a particular read-threshold, which may be an initial, default, read-threshold, the performance of other read-thresholds are estimated. These estimates may then be used to determine an optimal read-threshold. During the iterative process, selection variables, e.g., how many times, and for which read commands, to use each of the non-default read-thresholds in future read-attempts may be determined on-the-fly.

Abstract: Disclosed are methods and systems of managing a plurality of storage devices having a lifetime of a finite number of operations. An average number of storage devices reaching said lifetime of a finite number of operations per first unit time is calculated. For each one of the plurality of storage devices an estimated date when a finite number of operations will be reached is calculated. For each date, a variable related to the number of storage devices reaching said finite number of operations within a predetermined period of said date is set. For one or more variables having a value larger than average number of storage devices reaching said lifetime of a finite number of operations per first unit time, an action is carried out to reduce the number of storage devices reaching said lifetime per first unit of time.

Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.

Abstract: A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.

Abstract: The semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation for the plurality of memory cells in the memory cell array. The control logic controls the peripheral circuit and the memory cell array such that, during the program operation for the plurality of memory cells, pre-bias voltages are applied to a plurality of word lines coupled to the plurality of memory cells to precharge channel regions of the plurality of memory cells. Furthermore, different pre-bias voltages are applied to the plurality of word lines depending on the relative positions of the word lines.

Abstract: Apparatuses and methods for configuring a memory device using configuration commands are provided. A method can include executing a first command while the memory device is in a ready state to configure the memory device to a particular mode and executing a second command to perform a first operation while the memory device is in the particular mode.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.

Abstract: A semiconductor memory device includes first and second memory cells, each of which includes a charge storage layer, a first bit line that is connected to the first memory cell, and a second bit line that is connected to the second memory cell. A writing operation includes multiple loops of a programming operation and a verification operation, and first data is written in the first memory cell, and second data different from the first data is written in the second memory cell through the writing operation. In a first loop of the writing operation, a first voltage is applied to the first bit line and the second bit line is maintained in an electrically floating state during the programming operation, and a verification operation relating to the second data is not performed and a verification operation relating to the first data is performed.

Abstract: A memory controller includes a memory interface that is connected to a non-volatile memory that includes a plurality of memory cells, and a control unit. The control unit controls the memory interface to perform writing of data that has a first number of bits to a first memory cell in an n-bit write mode (where n is 2 or more), and when performing reading of the data written into the first memory cell, to control the memory interface to perform reading of data in an m-bit read mode (where m is less than n), as a result of which data that has a second number of bits which is smaller than the first number of bits, is returned from the first memory cell.

Abstract: Methods and apparatuses for single level cell caching are described. According to one example, a method includes receiving, at a memory device, a first set of data to be stored in a lower page of multilevel memory cells, storing the first set of data in a page of single level memory cells, storing the first set of data in the lower page of the multilevel memory cells, receiving, at the memory device, a second set of data to be stored in an upper page of the multilevel memory cells, and storing the second set of data directly in the upper page of the multilevel memory cells.

Abstract: The present embodiments relate to methods for estimating bit error rates (BERs) associated with a flash memory. According to certain aspects, embodiments provide estimating the BER of multi-bit flash memories during the programming of the flash memory, and providing the estimated BER in a readable status register of the flash memory, thereby improving the speed of programming of the flash memory.

Abstract: Provided is a programming method of a nonvolatile memory device, the method comprising the steps of a first programming loop including applying a first verifying voltage to word lines of a plurality of first memory cells for being programmed in a first programming state of a first target threshold voltage and detecting, from among the plurality of first memory cells, a first slow memory cell whose threshold voltage is less than the first verifying voltage, a second programming loop including applying a first program pulse to the first memory cells and applying a second program pulse to the first slow memory cell, a voltage level of the second program pulse of the second program loop being greater than a voltage level of the first program pulse of the second program loop, and a third programming loop.

Abstract: Disclosed are a memory device, including: a memory block including a plurality of cell strings; a peripheral circuit configured to set voltages for a program operation of selected memory cells in the cell strings, and program the selected memory cells by using the set voltages; and a control circuit configured to control the peripheral circuit so that the selected memory cells are programmed in response to a program command, and increase a channel voltage of non-selected cell strings including non-selected memory cells while the selected memory cells are programmed, and an operating method thereof.

Abstract: According to one embodiment, a semiconductor memory of an embodiment includes memory cells, a word line, bit lines, and a controller. The word line is coupled to a plurality of memory cells. The plurality of bit lines are respectively coupled to the plurality of memory cells. The controller executes a first write, and classifies a plurality of memory cells to which the second data should be written into a plurality of subgroups in accordance with a result of the first write, and after the classification, the controller executes a second write that includes a first program loop.

Abstract: The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.

Abstract: According to one embodiment, a memory controller includes one or more processors configured to function as a writing unit and a reading unit. The writing unit writes data as threshold voltages of individual memory cells. The reading unit reads the written data by detecting threshold voltages of the individual memory cells. The reading unit includes a selecting unit, a detecting unit, and an estimating unit. The selecting unit selects a read-target memory cell. The detecting unit detects a first threshold voltage at a time of reading of the read-target memory cell, and a second threshold voltage at a time of reading of at least one of adjacent memory cells that are adjacent to the read-target memory cell. The estimating unit estimates a third threshold voltage as a threshold voltage at a time of writing in the read-target memory cell based on the first threshold voltage and the second threshold voltage.

Abstract: A data storage device includes a non-volatile memory device and a controller. The controller is configured to calculate a read range including read regions that may correspond to each of read commands for the same physical address among a plurality of read commands received from a host device. The controller may be configured to generate an integral read command for simultaneously reading the calculated read range. The controller may transmit the integral read command to the non-volatile memory device.

Abstract: In this disclosure, data mapping based on three dimensional lattices that have an improved sum rate (i.e., lifetime capacity) with low read latency is disclosed. During the write, a memory location is written to multiple times prior to erasure. Specifically, for the first write, there are 4/3 bits per cell available for writing, which is about 10.67 kB per cell are used for data storage. Then, for the second write, there is one bit per cell, which is 8 kB per cell for data storage. If considering a block with 128 different cells and writing 32 kB of data, the first write results in 42.66 data writes while the second write results in 32 writes for a total of 74.66 writes. Previously, the number of writes for 32 kB would be 64 writes. Thus, by writing twice prior to erasure, more data can be stored.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: A memory device may include: a memory cell array including a plurality of memory cells; and a control circuit suitable for programming the memory cell array. The control circuit may program the memory cell array according to a predetermined coding method, such that read voltage levels for multi-sensing are minimized and the numbers of read operations for logical pages are distributed. Therefore, the memory device can improve the cell distribution for the plurality of memory cells and the performance of read timing.

Abstract: Technologies are generally described herein for static random access memory (SRAM) based memory structures and methods thereof such as multi-bit non-volatile static random-access memory (nvSRAM) with arrayed SRAM and NVM or SRAM buffered one time programmable (OTP) memories, RRAMs or other resistive RAMs.

Abstract: Methods and apparatuses for single level cell caching are described. According to one example, a method includes receiving, at a memory device, a first set of data to be stored in a lower page of multilevel memory cells, storing the first set of data in a page of single level memory cells, storing the first set of data in the lower page of the multilevel memory cells, receiving, at the memory device, a second set of data to be stored in an upper page of the multilevel memory cells, and storing the second set of data directly in the upper page of the multilevel memory cells.

Abstract: According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.

Abstract: A reading control method for a solid state storage device includes following steps. While the solid state storage device is in an idle mode, a background monitoring operation is performed on the first block and the second block. Consequently, a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired. In reading operation, a default read voltage set is provided to the non-volatile memory to read a data of the first block. If a data of the first block is not successfully decoded, a read retry process is performed on the first block and the first optimal read voltage set is provided to the non-volatile memory to read the data of the first block.

Abstract: A storage device includes a nonvolatile memory device and a controller configured to send first data, an address, and a first command to the nonvolatile memory device. The controller also sends at least one data to the nonvolatile memory device after sending the first command. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the first command. When receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation based on the first data and the at least one data.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for performing a group read refresh. An apparatus includes a plurality of memory groups. An apparatus includes an operation circuit that performs an operation on a selected memory group of a plurality of memory groups. An apparatus includes a remediation circuit that performs a countermeasure operation on an unselected memory group of a plurality of memory groups in response to an operation on a selected memory group.

Abstract: An integrated circuit includes an artificial intelligence (AI) logic and an embedded memory coupled to the AI logic and connectable to an external processor. The embedded memory includes multiple storage cells and multiple reference units. One or more reference units in the memory are selected for memory access through configuration at chip packaging level by the external processor. The external processor may execute a self-test process to select or update the one or more reference units for memory access so that the error rate of memory is below a threshold. The self-test process may be performed, via a memory initialization controller in the memory, to test and reuse the reference cells in the memory at chip level. The embedded memory may be a STT-MRAM, SOT, OST MRAM, and/or MeRAM memory.

Abstract: A semiconductor memory device includes a substrate, electrode films provided on a first direction side of the substrate and arranged with spacing from each other along the first direction, semiconductor members extending in the first direction, a charge storage member provided between each of the electrode films and each of the semiconductor members, and a control circuit. Memory cells are formed in crossing portions of the electrode films and the semiconductor members. The control circuit classifies the memory cells into a first group and a second group. The control circuit performs writing, reading, and erasing of n-value data (n being an integer of two or more) on the memory cell of the first group. The control circuit performs writing, reading, and erasing of m-value data (m being an integer larger than n) on the memory cell of the second group.

Abstract: A nonvolatile semiconductor memory device comprises a cell unit including a first and a second selection gate transistor and a memory string provided between the first and second selection gate transistors and composed of a plurality of serially connected electrically erasable programmable memory cells operative to store effective data; and a data write circuit operative to write data into the memory cell, wherein the number of program stages for at least one of memory cells on both ends of the memory string is lower than the number of program stages for other memory cells, and the data write circuit executes the first stage program to the memory cell having the number of program stages lower than the number of program stages for the other memory cells after the first stage program to the other memory cells.

Abstract: Apparatuses, methods, and devices that can be utilized to provide temperature-based memory operations are described. One or more apparatuses can include a memory device and a controller coupled to the memory device and configured to: determine an operating temperature of the apparatus, determine one of a plurality of designated open blocks of the memory device to write data based on the operating temperature of the apparatus and a size of the data, and write the data in the determined one of the plurality of designated blocks of the memory device.

Abstract: Provided is a method of operating a nonvolatile memory device including a memory cell array connected to a plurality of lines. The method may include performing a first loop including a first recovery section having a first operation time period, on a first line of the plurality of lines by applying a first voltage for a time period, wherein the first voltage is discharged with a first slope, and performing a second loop after the first loop including a second recovery section having a second operation time period that is different from the first operation time period, on the first line by applying a second voltage for a time period, wherein the second voltage is discharged with a second slope less than the first slope.

Abstract: There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a potential level switch circuit suitable for outputting an internal voltage having an internal power potential level or a negative potential level in response to the control signal, and a voltage apply circuit suitable for outputting a block selecting signal having a high potential level higher than the internal power potential level in response to the control signal and the internal voltage having the internal power potential level, or outputting the internal voltage having the negative potential level as the block selecting signal in response to the control signal.

Abstract: In one embodiment, an apparatus comprises a memory array comprising a plurality of phase change memory (PCM) cells; and a controller to determine to read data stored by the plurality of PCM cells independent of a read command from a host device; and in response to the determination to read data stored by the plurality of PCM cells independent of a read command from a host device, perform a dummy read operation on the plurality of PCM cells and perform an additional read operation on the plurality of PCM cells.

Abstract: Certain apparatuses, systems, methods, and computer program products are used for multi-plane memory management. An apparatus includes a failure detection circuit that detects a failure of a storage element during an operation. An apparatus includes a test circuit that performs a test on a storage element. An apparatus includes a recycle circuit that enables a portion of a storage element for use in operations in response to the portion of the storage element passing a test.

Abstract: Techniques for processing bits associated with an “N” multiple level cell NAND flash memory, such as a QLC NAND flash memory, are described. In an example, a system generates a symbol based on the bits. The symbol corresponds to at least two bits. The system encodes the symbol in a non-binary codeword and stores the non-binary codeword in the “N” multiple level cell NAND flash memory based on a mapping between symbols and voltage levels of the “N” multiple level cell NAND flash memory. The system initializes a non-binary decoding procedure based on asymmetric crossover probabilities between the voltage levels. The asymmetric crossover probabilities are defined based on the mapping between the symbols and the voltage level. The system decodes the non-binary codeword based on the non-binary decoding procedure.