Abstract: Methods of managing systems comprising a processor and a memory device external to the processor, including exposing the memory device to temperature levels associated with soldering, starting up the memory device and testing pre-programmed data using control circuitry of the memory device. When results of the testing indicate repair of the pre-programmed data should be performed, issuing a command from the processor to the memory device indicative of a desire for the memory device to repair the pre-programmed data, and in response to the memory device receiving the command, repairing the pre-programmed data using the control circuitry of the memory device.

Abstract: A sleep mode enabling method for a memory storage apparatus is provided. The method includes: setting a sleep pin connecting flag as a first value if a potential signal on a device sleep signal pin is at a second logic level opposite to an initial first logic level; setting a device sleep function flag as the first value in response to a device sleep function enabling command received from a host system; and enabling a device sleep function of the memory storage apparatus if the device sleep function enabling command is received and the device sleep function flag is set as the first value.

Abstract: A semiconductor system may be provided. The semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to perform an error correction operation. The second semiconductor device may be configured to perform an error correction operation. The semiconductor system may selectively operate the first or second semiconductor devices with regards to error correction operations based on a mode signal.

Abstract: A test method for a semiconductor memory device having a plurality of memory cells arranged in a matrix form, the test method including writing first data into a plurality of memory cells, while a plurality of word lines disposed in the columns of the memory cells are deselected, driving the low-potential side bit line of a bit line pair in the selected column, which is among a plurality of bit line pairs disposed in the columns of the memory cells, to a negative voltage level in accordance with second data complementary to the first data, and reading the data written into the memory cells.

Abstract: A system and method are provided for boundary scan testing one or more digital data storage drives. In particular, a drive tester system connects to the one or more digital data storage drives via a standard two-wire interface, such as a system management bus (SMBus) interface. The drive tester system performs a boundary scan test on the on more digital data storage drives via the standard two-wire interface. The boundary scan test may include a vector test.

Abstract: Integrated circuits, systems and methods are disclosed in which data bits protected by error correction code (ECC) detection and correction may be increased such that a combination of primary and additional bits may also be ECC protected using existing ECC allocation, without affecting ECC capabilities. For example, the additional bits may be encoded into phantom bits that are in turn used in combination with the primary bits, to generate an ECC. This ECC may then be combined with the primary bits to form a code word. The code word may be transmitted (or stored) so that when the data bits are received (or retrieved), assumed values of the phantom bits may be decoded, using the ECC, back into the additional bits without the phantom bits or the additional bits ever having transmitted (or stored).

Abstract: The present disclosure provides a data storage system including a data memory device and controller having interface error detection and handling logic. In one example, a solid-state data memory device is provided and includes a semiconductor package. A memory array is provided in the semiconductor package and an interface is provided that is communicatively couplable to a device bus for receiving data to be stored to the memory array. An error detection component is provided in the semiconductor package and is associated with the interface of the solid-state data memory device. The error detection component is configured to detect errors occurring on data received at the interface prior to the data being stored to the memory array.

Abstract: An apparatus and a method which use a programmable reliability aging timer are provided. The apparatus includes a performance circuit configured to perform a function of an integrated circuit (IC), a memory unit configured to store a lifetime of the IC, a controller configured to set an aging target condition according to the lifetime stored in the memory unit, and a reliability aging timer (RAT) configured to apply stress to a test pattern according to the aging target condition and sense a result of the stress to determine the degradation of the IC. The RAT refreshes an operation of the performance circuit if it is determined that the IC degraded before the lifetime of the IC.

Abstract: A programmable logic device uses power island based design partitioning. Each power islands includes a plurality of programmable logic cells and a programmable routing network configurable to interconnect the plurality of programmable logic cells and configurable to interconnect with at least one other power island. When a power island is in an OFF state, the programmable logic cells within the power island are powered OFF. Feed-through routing connectors in the power island, however, may be statically or dynamically powered ON independently of the powered OFF state of the power island.

Abstract: Apparatuses and methods are provided for a high speed writing test mode for memories. An example apparatus includes a memory core, a data terminal coupled to a data receiver, a read buffer coupled between the data terminal and the memory core, and a write buffer coupled between the data receiver and the memory core. The write buffer may include at least a first input coupled to the data receiver, and a second input. While in a test mode, the write buffer may be loaded with data from the second input instead of the first input.

Abstract: A method of programming electrical fuses reliably is disclosed. If a programming current exceeds a critical current, disruptive mechanisms such as rupture, thermal runaway, decomposition, or melt, can be a dominant programming mechanism such that programming is not be very reliable. Advantageously, by controlled programming where programming current is maintained below the critical current, electromigration can be the sole programming mechanism and, as a result, programming can be deterministic and very reliable. In this method, fuses can be programmed in multiple shots with progressive resistance changes to determine a lower bound that all fuses can be programmed satisfactorily and an upper bound that at least one fuse can be determined failed. If programming within the lower and upper bounds, defects due to programming can be almost zero and, therefore, defects are essentially determined by pre-program defects.

Abstract: Memory device systems, systems and methods are disclosed, such as those involving a plurality of stacked memory device dice and a logic die connected to each other through a plurality of conductors. The logic die serves, for example, as a memory interface device to a memory access device, such as a processor. The logic die can include a command register that allows selective operation in either of two modes. In a direct mode, conventional command signals as well as row and column address signals are applied to the logic die, and the logic die can essentially couple these signals directly to the memory device dice. In an indirect mode, a packet containing a command and a composite address are applied to the logic die, and the logic die can decode the command and composite address to apply conventional command signals as well as row and column address signals to the memory device dice.

Abstract: A data storage apparatus includes a nonvolatile memory device and a controller configured to determine whether or not one or more addresses of defective bit lines are included in an address of a write data to be written into the nonvolatile memory device or an address of a read data read from the nonvolatile memory device, and write the write data or read the read data by skipping the defective bit lines based on a determination result.

Abstract: A fuse blowing method is disclosed. The fuse blowing method comprises the following operations: detecting a plurality of voltages of a plurality of word lines; sending an enabling signal to a fuse circuit when one of the voltages is below a voltage threshold, in which the one of the voltages corresponds to one of the word lines; and blowing a fuse, in which the fuse is connected to the one of the word lines, such that the one of the voltages is higher than the voltage threshold.

Abstract: A semiconductor device includes a bank address generation circuit, a row/column address generation circuit, and an operation control circuit. The bank address generation circuit generates a bank address signal according to a bank group selection signal which is generated in response to a first temperature code and a second temperature code. The row/column address generation circuit generates a row address signal and a column address signal according to an area selection signal which is generated in response to a third temperature code and a fourth temperature code. The operation control circuit performs a data scrub operation on a cell which is accessed by the bank address signal, the row address signal and the column address signal.

Abstract: In one embodiment, a method of operating memory circuitry that is coupled to processing circuitry and memory controller circuitry may include a step to initialize a first portion of the memory circuitry with the memory controller circuitry. The method may also include a step to store startup sequence information onto the first portion of the memory circuitry while the memory controller circuitry initializes a second portion of the memory circuitry with the processing circuitry. The second portion of memory circuitry may be different from the first portion of the memory circuitry.

Abstract: A repair device and a semiconductor device including the same are disclosed, which relate to a technology for storing failure information in a fuse circuit during a test operation. The repair device includes a test circuit configured to test data received from a cell array in response to a test signal, and output a failure signal when a failure occurs. The repair device also includes a count circuit configured to output a counting signal by counting the failure signal, a column failure decision circuit configured to determine whether a column failure occurs in response to the counting signal, and output a write enable signal. Further, the repair device includes a fuse controller configured to output a failed column address in response to the counting signal when the write enable signal is activated, and a column fuse circuit configured to sequentially store the column address.

Abstract: A memory test data generating circuit and method for generating a plurality of sets of test data is provided. The plurality of sets of test data is provided to a memory via a plurality of channels by a memory controller and is for testing the memory. The memory test data generating circuit includes: a plurality of counters, generating a plurality of counter values; and a data repetition and combination unit, generating the plurality of sets of test data according to the plurality of counter values, a bit width between the memory test data generating circuit and the memory controller, and a bit width between the memory controller and the memory. The test data of each channel is an identical and periodical data series.

Abstract: A device for monitoring a component has at least one processor core and a further processor core. The device further includes a determining unit configured to determine a profile of the processor core, the profile being influenced by an input signal applied to the processor core, and to determine a further profile of the further processor core, the further profile being influenced by a further input signal applied to the further processor core. The device further includes a comparison unit configured to compare the profile and the further profile and to generate a fault signal, if a comparison result of a comparison carried out by the comparison unit indicates defective similarity of the profile to the further profile.

Abstract: Systems and methods are disclosed for reducing memory power consumption via pre-filled dynamic random access memory (DRAM) values. One embodiment is a method for providing DRAM values. A fill request is received from an executing program to fill an allocated portion of the DRAM with a predetermined pattern of values. The predetermined pattern of values is stored in a fill value memory residing in the DRAM. A fill command is sent to the DRAM. In response to the fill command, a plurality of sense amp latches are connected to the fill value memory to update the corresponding sense amp latch bits with the predetermined pattern of values stored in the fill value memory.

Abstract: A semiconductor memory apparatus includes an input/output pad, a first data input/output circuit, a first data transfer circuit, a second data transfer circuit, and a test data comparison circuit. The input/output pad may be coupled to an external equipment. The first data input/output circuit may be coupled to the input/output pad. The first data transfer circuit may transfer data output from the first data input/output circuit to a first data storage region in response to a test write signal and transfer data output from the first data storage region to the first data input/output circuit in response to a test read signal. The second data transfer circuit may transfer data output from the first data input/output circuit to a second data storage region in response to the test write signal and transfer data output from the second data storage region to a second data input/output circuit in response to the test read signal.

Abstract: A method of implementing fault tolerance in computer memory includes translating a logical address to a first physical address for a first memory location in the computer memory. The computer memory includes redundant memory locations. A second memory location selected from the redundant memory locations is used instead of the first memory location in response to information characterizing the first memory location as faulty. Also, error correction coding (ECC) is performed at least two times on data written to the computer memory and read from the computer memory; the ECC is performed in the computer memory and outside the computer memory. Furthermore, in response to identifying a defective first pin on a memory module, an input from the defective pin is routed to a redundant second pin on the module, and an output from the second pin is routed to a destination on the memory module.

Abstract: In an embodiment, an integrated circuit may include one or more CPUs, a memory controller, and a circuit configured to remain powered on when the rest of the SOC is powered down. The circuit may be configured to receive audio samples from a microphone, and match those audio samples against a predetermined pattern to detect a possible command from a user of the device that includes the SOC. In response to detecting the predetermined pattern, the circuit may cause the memory controller to power up so that audio samples may be stored in the memory to which the memory controller is coupled. The circuit may also cause the CPUs to be powered on and initialized, and the operating system (OS) may boot. During the time that the CPUs are initializing and the OS is booting, the circuit and the memory may be capturing the audio samples.

Abstract: A semiconductor memory apparatus includes a CAS latency setting circuit configured to change an initially-set CAS latency value in response to control signal pulses which are sequentially applied, during a test mode without changing settings of a mode register set during each test.

Abstract: The disclosed technology relates to a memory device configured to perform multiple access operations in response to a single command received through a memory controller and a method of performing the multiple access operations. In one aspect, the memory device includes a memory array comprising a plurality of memory cells and a memory controller. The memory controller is configured to receive a single command which specifies a plurality of memory access operations to be performed on the memory array. The memory controller is further configured to cause the specified plurality of memory access operations to be performed on the memory array.

Abstract: Data is replicated into a memory cache and cache inhibited memory in data segments with segment size that provides non-naturally aligned data boundaries to reduce the time needed to generate test cases for testing a processor. Placing data in the non-naturally aligned data boundaries allows replicated testing of the memory cache and cache inhibited memory while preserving double word and quad word boundaries in segments of the replicated test data. This allows test cases generated for cacheable memory to be replicated and used for cache inhibited memory. The processor can then use a single test replicated in this manner by branching back and using the next slice of the replicated test data in the memory cache and cache inhibited memory.

Abstract: A rewrite detection system, a rewrite detection device and an information processing device can detect unauthorized rewrite to a program or data stored in a storage unit of the information processing device. A rewrite detection device generates a random seed and transmits it to an ECU and a server device. The ECU calculates a hash value using a predetermined hash function on the basis of the received random seed and the storage content of the storage unit, and transmits the hash value to the rewrite detection device. The server device transmits an expectation in response to an inquiry from the rewrite detection device. The rewrite detection device determines whether unauthorized rewrite to a program or data in the ECU has been performed or not in accordance with whether the expectation received from the server device and the hash value received from the ECU coincide with each other or not.

Abstract: An integrated circuit (IC) memory controller includes receiver circuitry to receive read data from a memory. The receiver circuitry includes equalization circuitry having at least one tap to apply data level equalization to the read data, and a tap weight adapter circuit. The tap weight adapter circuit adaptively generates a data level tap weight corresponding to the data level equalization from an edge analysis of previously received read data.

Abstract: A semiconductor device includes a plurality of test entry selection units configured to selectively activate a plurality of test entry signals in response to a test entry code, and a plurality of test operation blocks, corresponding to the respective test entry signals, each configured to be reset in response to activation of the corresponding test entry signal to perform a set test operation corresponding to a test selection code.

Abstract: Techniques are disclosed relating to memory testing. In one embodiment, an integrated circuit is disclosed that includes a memory and an interface circuit. The interface circuit is configured to receive one or more testing signals from a built in self-test (BIST) unit. The interface circuit is further configured to receive, independently from the one or more testing signals, one or more configuration signals from automated test equipment (ATE). The interface circuit is further configured to issue one or more instruction signals to the memory based on the one or more testing signals and based on the one or more configuration signals. In some embodiments, the interface circuit is configured to enable the BIST unit to detect errors in functions the BIST unit is not designed to test.

Abstract: Aspects include testing distributed file systems by selecting a file in a multiple writer environment and selecting an offset of a block in the file. Test data is generated for the block by randomly selecting a starting value from a plurality of possible starting values. A test header that includes the starting value and a test data sequence that starts with the starting value is created. A file system that is being tested writes the test header and the test data sequence to the block. Contents of the block are read by the file system that is being tested, and expected contents of the data sequence are determined based on contents of the read header. The expected contents of the data sequence are compared to the read data sequence and an error indication is output based on the expected contents not being equal to the read contents.

Abstract: A test mode setting circuit may include: a first test mode signal generation unit operated by a first supply voltage, and suitable for activating a first test mode signal at a first voltage level in a state where mode setting is being performed, the first test mode signal corresponding to a test code among a plurality of first test mode signals; and a second test mode signal generation unit operated by a second supply voltage, and suitable for latching the first test mode signal at a second voltage level and generating the latched first test mode signal as a second test mode signal even when the first supply voltage is deactivated to a third supply voltage lower than the first supply voltage.

Abstract: A method includes providing a data processor having an instruction pipeline, where the instruction pipeline has a plurality of instruction pipeline stages, and where the plurality of instruction pipeline stages includes a first instruction pipeline stage and a second instruction pipeline stage. The method further includes providing a data processor instruction that causes the data processor to perform a first set of computational operations during execution of the data processor instruction, performing the first set of computational operations in the first instruction pipeline stage if the data processor instruction is being executed and a first mode has been selected, and performing the first set of computational operations in the second instruction pipeline stage if the data processor instruction is being executed and a second mode has been selected.

Abstract: Provided are a semiconductor device including an error correction code circuit and a driving method thereof. The semiconductor device includes a plurality of normal mats including a plurality of memory cells and connected to data lines, a plurality of dummy mats arranged in specific areas of the plurality of normal mats and inputting/outputting parity bits through parity lines of a specific circuit, a plurality of free ECC (Error Correction Code) calculation circuits that perform ECC calculation corresponding to data applied through the data lines and the parity lines, and a main ECC calculation circuit that combines data applied from the plurality of free ECC calculation circuits with one another and performs ECC calculation.

Abstract: A semiconductor device and or method of repairing the semiconductor device may be provided. The semiconductor device may include an error information storage circuit. The error information storage circuit may be configured to latch an address to generate a latched fail address and a rupture control signal.

Abstract: A power loss test apparatus for a non-volatile memory device includes a test-board including at least one socket into which at least one test target non-volatile memory device is inserted, a micro controller that determines whether to supply power to the test target non-volatile memory device based on current consumption information or operating state information of the test target non-volatile memory device, and a tester that performs a power loss test for the test target non-volatile memory device based on whether the power is supplied to the test target non-volatile memory device.

Abstract: A static random access memory (SRAM) includes an array of storage cells and a first sense amplifier. The array of storage cells is arranged as rows and columns. The rows correspond to word lines and the columns correspond to bit lines. The first sense amplifier includes a first transistor and a second transistor. The first sense amplifier is configured to provide a first read of a first storage cell of the array of storage cells. Based on the first read of the first storage cell failing to correctly read data stored in the first storage cell, the first sense amplifier is configured to increment a body bias of the first transistor a first time. In response to the body bias of the first transistor being incremented, the first sense amplifier is configured to provide a second read of the first storage cell.

Abstract: Aspects of a method and apparatus for converting an analog input value to a digital output code are provided. One embodiment of the apparatus includes a digital-to-analog converter, a comparator, and control logic circuitry. The digital-to-analog converter is configured to generate an analog reference value based on a received digital reference value. The comparator is configured to compare an analog input value to the analog reference value after expiration of an allotted settling time for the digital-to-analog converter and generate a comparison result indicative a relationship between the analog input value and the analog reference value. The control logic circuitry is configured to select the allotted settling time for the digital-to-analog converter based on a bit position of a digital output code to be determined, and update the bit position of the digital output code based on the comparison result.

Abstract: A semiconductor device includes a control signal generation circuit and an input/output (I/O) control circuit. The control signal generation circuit generates first and second read control signals and first and second write control signals. One of the first and second read control signals and one of the first and second write control signals is selectively enabled according to a combination of first and second addresses for selecting a first I/O line or a second I/O line. The I/O control circuit outputs read data loaded on first and second internal I/O lines through any one of the first and second I/O lines in response to the first and second read control signals. In addition, the I/O control circuit outputs input data through any one of the first and second I/O lines in response to the first and second write control signals.

Abstract: A method and system for controlling an MBC configured flash memory device to store data in an SBC storage mode, or a partial MBC storage mode. In a full MBC storage mode, pages of data are programmed sequentially from a first page to an Nth page for each physical row of memory cells. Up to N virtual page addresses per row of memory cells accompany each page to be programmed for designating the virtual position of the page in the row. For SBC or partial MBC data storage, a flash memory controller issues program command(s) to the MBC memory device using less than the maximum N virtual page addresses for each row. The MBC memory device sequentially executes programming operations up to the last received virtual page address for the row.

Abstract: An embodiment of the invention discloses a method for testing the retention mode of an array of SRAM cells. A data pattern is written to the array. After the data pattern is written, a retention circuit is enabled for a period of time that drops the voltage on a supply line. During this period of time, a first current is drawn from the supply line by sources internal (i.e. leakage current) to the array. Also during this time period, current is drawn from the supply line by a discharge circuit. The second current is provided to shorten the time required to test the retention mode of the array. After the period of time has expired, the retention mode and the discharge circuit are disabled and the data pattern is read from the array and compared to the data pattern written to the array.

Abstract: An apparatus and method are provided for implementing write assist with boost attenuation for static random access memory (SRAM) arrays. The apparatus includes a memory array comprising a plurality of SRAM cells. The apparatus further includes a write driver connected to each of a differential pair of bit lines in each of the plurality of SRAM cells of the memory array. The apparatus further includes a write assist attenuation circuit connected to the write driver, the write assist attenuation circuit comprising a clamping device configured to modify a control signal as a function of supply voltage and process to attenuate an amount of boost applied to pull one of the bit lines below ground in an active phase of a write cycle.

Abstract: The semiconductor memory device includes a cell array unit comprising a plurality of cell mats; a column decoder suitable for outputting a plurality of column selection signals based on a column address to a plurality of column selection lines, respectively, during a normal operation, and for applying a signal having a first logic level to the plurality of column selection lines during a test operation; and a line defect detection circuit suitable for detecting whether a defect is present in the plurality of column selection lines in response to signals of the plurality of column selection lines, and outputting a defect detection signal based on the detection result, during the test operation.

Abstract: Apparatuses and methods for performing buffer operations in memory are provided. One example method can include storing second page data and third page data on a buffer while programming first page data during a first pass programming operation and programming the second page data and the third page data from the buffer to the array of memory cells during a second pass programming operation.

Abstract: A method and apparatus for continuous write and read operations during memory testing. The method comprises: controlling a signal generator; triggering a write address and a data field operation each memory cycle; triggering a write signal to write to a memory each memory clock cycle; and reading a read address and a read data operation to the memory. An additional embodiment provides an apparatus for advanced memory latency testing. The apparatus includes a data generator trigger in communication with a signal generator and an address generator trigger also in communication with the signal generator.

Abstract: A method and apparatus for reducing memory built-in self-test (MBIST) area by optimizing the number of interfaces required for testing a given set of memories is provided. The method begins when memories of a same configuration are grouped together. One memory is then selected from each of the groups. MBIST insertion is then performed for a selected group of memories, and the selected group of memories contains memories of different configurations. Control logic is used to select each group of memories separately. The memory group under test may also be selected using programmable user bits. An apparatus is also provided. The apparatus includes: a controller, at least one memory interface in communication with the controller, at least one control logic cloud in communication with the at least one memory interface; and at least one bit bus.

Abstract: A memory device may include link error correction code (ECC) decoder and correction circuitry. The ECC decoder and correction circuitry may be arranged in a write path and configured for link error detection and correction of write data received over a data link. The memory device may also include memory ECC encoder circuitry. The memory ECC encoder circuitry may be arranged in the write path and configured for memory protection of the write data during storage in a memory array.

Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a command/address signal. The second semiconductor device extracts an active signal, a pre-charge signal, and addresses from the command/address signal, performs an active operation on a memory cell corresponding to the addresses, and performs a refresh operation on the memory cell corresponding to counting signals generated by counting a number of pulses in a refresh signal.

Abstract: An apparatus is provided for testing storage elements that include a variable impedance element switchable between a first impedance state and a second impedance state. The apparatus includes an interconnect circuit for coupling storage elements in a selected arrangement. The apparatus includes an impedance sensing circuit operable to measure at least a resistive component of an impedance of the coupled storage elements and a test controller operable to configure the interconnect circuit and initiate measurement of the combined impedance of the coupled storage elements by the impedance sensing circuit. The impedance sensing circuit compares the measured impedance with at least a resistive component of an expected impedance. The storage elements and apparatus may form part of an integrated circuit. A storage element may include a correlated electron switch, for example.

Abstract: A memory cell and array and a method of forming a memory cell and array are described. A memory cell includes first and second pull-up transistors, first and second pull-down transistors, first and second pass-gate transistors, and first and second isolation transistors. Drains of the first pull-up and first pull-down transistors are electrically coupled together at a first node. Drains of the second pull-up and second pull-down transistors are electrically coupled together at a second node. Gates of the second pull-up and second pull-down transistors are electrically coupled to the first node, and gates of the first pull-up and first pull-down transistors are electrically coupled to the second node. The first and second pass-gate transistors are electrically coupled to the first and second nodes, respectively. The first and second isolation transistors are electrically coupled to the first and second nodes, respectively.