Abstract: Some embodiments include apparatuses and methods having a first interface to communicate with a processing unit, a second interface to communicate with a memory device, and a module coupled to the first and second interfaces. In at least one of the embodiments, the module can be configured to obtain information stored in the memory device and perform at least one of testing and repairing of a memory structure of the memory device based at least in part on the information.

Abstract: Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.

Abstract: A memory device may include a plurality of memory cells; and an error detection unit suitable for latching first read data of one or more memory cells selected from the plurality of memory cells after refreshing the selected memory cells, in a first phase, and suitable for detecting errors of the selected memory cells before refreshing the selected memory cells, in a second phase.

Abstract: Systems, apparatuses, and methods for reducing leakage current for a memory array. In various embodiments, techniques are implemented for generating a supply voltage for a memory array which tracks the data retention voltage of the memory array. In one embodiment, multiple diodes are implemented in parallel between a supply voltage and the memory array. The diodes have different sizes and different voltage drops, and the diode which will cause the voltage to drop closest to without going below the data retention voltage is selected for routing the supply voltage to the memory array. Since the data retention voltage for the memory array varies over temperature, the temperature of the system is monitored. Based on changes in the temperature, the system changes which diode is in the circuit path for supplying power to the memory array so as to reduce leakage current for the memory array.

Abstract: To provide a semiconductor device which includes a novel refresh circuit in a memory including an oxide semiconductor film. As circuits which operate in a refresh operation of the memory including the oxide semiconductor film, a sense amplifier circuit, a latch circuit, a first switch, and a second switch are provided. In the refresh operation, a potential which reflects a potential stored in the memory is input to the sense amplifier circuit, an output of the sense amplifier circuit is input to the latch circuit, and an output of the latch circuit is written to the memory again through the first switch and a first transistor including an oxide semiconductor in a channel.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets.

Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may output a clock signal, a test mode signal and command address signals. The second semiconductor device may repeatedly write and read out data into and from a plurality of memory cells sequentially selected by addresses that are sequentially counted or may repeatedly write and read out the data into and from specific memory cells selected by a specific address among the addresses, according to the clock signal and the command address signals in response to the test mode signal.

Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

Abstract: Technology is described herein for detecting a leakage current between a block select line and a conductive region that exists in multiple blocks of memory cells in a plane. The conductive region may be shared by at least one memory cell in multiple blocks. One example of the conductive region is a common source line that includes one or more local source lines and one or more global source lines. If the leakage current were to become high enough, the electrical short between the conductive region and the block select line could cause a plane level failure. If the leakage current is less than an amount that would cause a plane failure, but that indicates that the non-volatile memory device is susceptible to a plane failure, data may be moved out of the plane before the plane failure occurs. Thus, data loss may be prevented.

Abstract: A semiconductor package and a method of fabricating the same are provided. The semiconductor package may include a first semiconductor chip with a first circuit pattern, a second semiconductor chip disposed on the first semiconductor chip and provided with a second circuit pattern, and first and second connection structures penetrating the first and second semiconductor chips. The first connection structure may be electrically connected to the first circuit pattern and may be electrically disconnected from the second circuit pattern. The second connection structure may be electrically disconnected from the first circuit pattern and may be electrically connected to the second circuit pattern.

Abstract: A test setting circuit includes a first detection unit suitable for detecting whether a first code is sequentially inputted based on a first sequence, at each of first to Nth steps, where N is a natural number; a second detection unit suitable for sequentially receiving a second code through the first to Nth steps, and detecting whether the second code that is sequentially inputted through the first to Nth steps has a value corresponding to a second sequence; and a test setting unit suitable for setting a test mode when it is detected that the first code and the second code are inputted to satisfy the first sequence and the second sequence.

Abstract: A scan chain for testing a combinatorial logic circuit includes a first scan chain path of flip-flops connected to the combinatorial logic circuit for functional mode operation during runtime of the combinatorial logic circuit. A second scan chain path of flip-flops is also connected to the combinatorial logic circuit and supports both a shift mode and a capture mode. The second scan chain path operates in shift mode while the first scan chain path is connected to the combinatorial logic circuit for functional mode operation. The second scan chain is then connected to the combinatorial logic circuit when run time is interrupted and operates in capture mode to apply the test data to the combinatorial logic circuit.

Abstract: A memory system includes an address remapping circuit and a first set of memory devices. The address remapping circuit includes a plurality of input terminals for receiving a plurality of chip selection signals and a plurality of chip identification signals. The address remapping circuit receives input signals corresponding to a portion of the plurality of chip selection signals and the plurality of chip identification signals through corresponding input terminals of the plurality of input terminals and generates a plurality of internal chip selection signals based on the input signals and a remapping control signal. Each of the first set of memory devices is configured to be selected in response to a corresponding internal chip selection signal of the plurality of internal chip selection signals.

Abstract: A component subsystem and a method for authenticating the component subsystem. The component subsystem may be installed in a host device. The method can include an authentication protocol, wherein the host device sends a test voltage value to the component subsystem which, in turn, generates a test voltage based on the test voltage value. The test voltage is applied to a test cell that includes a wordline, a bitline, and a memory film. A response voltage is read from the bitline and compared to an expected value. If the response voltage matches the expected value, host device and/or component subsystem functionality is enabled. If the response voltage does not match the expected value, the host device and/or component subsystem functionality is disabled.

Abstract: Provided is a non-volatile semiconductor storage device which can be downsized with a simple circuit without impairing the function of an error correcting section, and a method of testing the non-volatile semiconductor storage device. An error correction circuit is configured to perform error detection and correction of merely the same number of bits as data bits, and a circuit for performing error detection and correction of check bits is omitted to downsize the circuit. A multiplexer for, in a testing state, replacing a part of the data bits read out from a storage element array with the check bits, and inputting the check bits to the error correction circuit is provided. Thus, error detection and correction of the check bits are performed to enable shipment inspection concerning the check bits as well.

Abstract: An embodiment relates to a method for determining a health state of a non-volatile memory comprising: determining the health state based on at least one indicator for determining a predictable failure of the non-volatile memory.

Abstract: A memory apparatus and a data access method thereof are provided. The memory apparatus includes a first memory unit and a second memory unit, wherein an access speed of the second memory unit is higher than an access speed of the first memory unit. The method includes: receiving write data and a corresponding write address; comparing the write data with data corresponding to the write address in the second memory unit, so as to determine whether to write the write data into a current physical memory page of the first memory unit and into the second memory unit; after a data writing operation is executed, executing a data arranging operation on the current physical memory page according to the data in the second memory unit when the current physical memory page is full; and when a read command is received, reading the corresponding data in the second memory unit.

Abstract: A method performed by a controller includes initiating a first data write operation and an erase operation on a portion of a non-volatile memory. The first data write operation corresponds to a first write resolution. The method includes initiating a second data write operation to write test data to the portion of the non-volatile memory. The second data write operation corresponds to a second write resolution that is greater than the first write resolution. The method also includes reading a representation of the test data from the portion of the non-volatile memory.

Abstract: Disclosed herein are components of an emulation system capable of efficiently recreating the functionality a CAM/TCAM memory circuit. Rather than using specialized gates or the existing processors, the embodiments described herein configure/instruct the existing memory circuits of the emulation system to imitate a search engine function that queries the existing RAM circuits, portions of which are reconfigured to function as CAM/TCAM memory. The hardware-based search engine and the repurposed memory (e.g., RAM, SRAM, DRAM) allow an emulation system to emulate the functionality of a CAM/TCAM memory. This can be implemented at a low processing cost to the emulation system, as it provides the ability to store more CAM/TCAM data at a very low cost. It can also use the existing system and emulation buses that other components (e.g., processors) of the system use to communicate with the memory, so expansion of the emulation system may not be required.

Abstract: Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages are provided. An OCZS-SA is configured to amplify received differential data and reference input voltages with a smaller sense amplifier offset voltage to provide larger sense margin between different storage states of memory bitcell(s). The OCZS-SA is configured to cancel out offset voltages of input and complement input transistors, and keep the input and complement input transistors in their activated state during sensing phases so that sensing is not performed in their “dead zones” when their gate-to-source voltage (Vgs) is below their respective threshold voltages.

Abstract: An apparatus and method are provided for implementing write assist with boost attenuation for static random access memory (SRAM) arrays. The apparatus includes a memory array comprising a plurality of SRAM cells. The apparatus further includes a write driver connected to each of a differential pair of bit lines in each of the plurality of SRAM cells of the memory array. The apparatus further includes a write assist attenuation circuit connected to the write driver, the write assist attenuation circuit comprising a clamping device configured to modify a control signal as a function of supply voltage and process to attenuate an amount of boost applied to pull one of the bit lines below ground in an active phase of a write cycle.

Abstract: Disclosed is a storage device, including: a memory controller configured to generate mode maintenance information or mode change information in response to a command received from a host; and a memory device configured to perform a selected operation in a previous mode when the mode maintenance information is received, and change a mode and perform the selected operation when the mode change information is received.

Abstract: Embodiments of the present invention provide systems and methods for reducing power consumption during the operation of a SRAM cell. Embodiments of the present invention reduce power consumption by determining switching activity, and based off a determination of low switching activity, gates off a core which is not written; and limits switching activity on the unaddressed core by applying the highest order bit.

Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs an external command. The second semiconductor device provides a first supply voltage to a bit line sense amplifier. The first supply voltage is generated by using a precharge voltage in response to the external command during a first time period from a point in time when a precharge mode begins. The second semiconductor device also adjusts a voltage level of the first supply voltage during a second time period from a point in time when the first time period terminates to a point in time when an active mode begins.

Abstract: A memory cell readable through a bit line and addressable through a word line can be stressed by applying a stress voltage to the bit line for a stress voltage time, and addressing the memory cell through the word line for an addressing time included within the stress voltage time. The memory cell can be tested by writing a data value into the memory cell, stressing the memory cell, reading the stored value from the memory cell, and determining whether the stored value corresponds to the data value. A testable memory array can include a memory cell addressable through a word line and readable through a bit line, a precharge circuit, a stress circuit, and an array built-in self test (ABIST) circuit. The ABIST circuit can be configured to stress the memory cell by applying a stress signal to the stress circuit.

Abstract: The present disclosure includes apparatuses and methods related to data shifting. An example apparatus comprises a first memory cell coupled to a first sense line of an array, a first isolation device located between the first memory cell and first sensing circuitry corresponding thereto, and a second isolation device located between the first memory cell and second sensing circuitry corresponding to a second sense line. The first and the second isolation devices are operated to shift data in the array without transferring the data via an input/output line of the array.

Abstract: A communication apparatus comprises a CAM, an action determination unit, and a CAM diagnosis unit. The CAM includes, a plurality of entries each storing therein at least a portion of header information of frame, and a search circuit for each entry configured to determine whether or not a search key matches data stored at the entry. The search key is correlated with information indicating whether or not an entry matching the search key and an expected value of a search result including identification information of an entry matching the search key. The CAM diagnosis unit causes the CAM to search for an entry matching the search key. The CAM diagnosis unit diagnoses a failure occurring at the search circuit of an entry to be the test object when the result of the search does not match the expected value of a search result correlated to the search key.

Abstract: When a screening test at a normal temperature is performed instead of a low temperature screening test of SRAM, overkill is reduced and risk of outflow of defects due to local variation is suppressed. An SRAM including a word line, a bit line pair, a memory cell, and a drive circuit that drives the bit line pair is provided with a function that can drive one bit line of the bit line pair at a high level (VDD) potential and drive the other bit line at an intermediate potential (VSS+several tens mV to one handled and several tens mV) a little higher than a low level (VSS) potential for normal writing when writing data into the memory cell.

Abstract: A method for memory management includes streaming bits to a memory buffer on a memory device using a write data channel that optimizes a speed of writing to the memory devices. The bits are written to non-volatile memory cells in the memory device at a first speed, using a bi-directional bus. Bits are read from the memory device over a read channel to provide reads at a second speed that is slower than the first speed, using the bi-directional bus.

Abstract: A memory device includes a plurality of memory cells for storing data; a plurality of memory cells for storing data; a non-volatile memory unit; a test control unit suitable for detecting weak memory cells among the plurality of memory cells; a program control unit suitable for controlling addresses of the detected weak memory cells to be programmed in the non-volatile memory unit; and a refresh control unit suitable for refreshing the addresses stored in the non-volatile memory unit more frequently than other memory cells.

Abstract: A memory having a redundancy area is operated in a normal mode and an error is detected. A selecting selects between in-line repair process and off-line repair. In-line repair applies a short term error correction, which remaps a fail address to a remapped memory area of the memory. An in-system repair is applied, for a one-time programmed remapping of the fail address to a redundancy area of the memory. In-system repair utilizes idle time of the memory to maintain valid memory content.

Abstract: Aspects of the embodiments include systems and devices that include a memory controller circuit element, and a printed circuit board (PCB). The PCB can include a memory module element; and a data buffer circuit element, the data buffer circuit element electrically connected to the memory controller circuit element and configured to receive instructions and data from the memory controller circuit element, the data buffer circuit element electrically connected to the memory module circuit element directly or through a socket, the data buffer circuit element configured to transmit instructions and data originated from the memory controller circuit element to the memory module circuit element and transmit data back to the memory controller.

Abstract: A semiconductor memory device includes a memory cell array and a test circuit. The test circuit reads data stream from the memory cell array, configured to, on comparing bits of each first unit in the data stream, compares corresponding bits in the first units as each second unit and outputs a fail information signal including pass/fail information on the data stream and additional information on the data stream, in a test mode of the semiconductor memory device.

Abstract: A memory cell readable through a bit line and addressable through a word line can be stressed by applying a stress voltage to the bit line for a stress voltage time, and addressing the memory cell through the word line for an addressing time included within the stress voltage time. The memory cell can be tested by writing a data value into the memory cell, stressing the memory cell, reading the stored value from the memory cell, and determining whether the stored value corresponds to the data value. A testable memory array can include a memory cell addressable through a word line and readable through a bit line, a precharge circuit, a stress circuit, and an array built-in self test (ABIST) circuit. The ABIST circuit can be configured to stress the memory cell by applying a stress signal to the stress circuit.

Abstract: A circuit includes a first memory cell and a data control circuit configured to provide first data and second data. The first memory cell has a first port and a second port. The first data is written from the first port to the first memory cell. The second data is based on information of the first data. The second port is configured to write the second data to the first memory cell based on a detection of a write disturb caused by the second port to the first port.

Abstract: A memory system and operating method thereof are provided. The non-volatile memory array is configured to store data. The controller is coupled to the non-volatile memory array. The memory controller is configured to provide a special write operation to write the data in the non-volatile memory array before a board mount operation is applied, and provide a regular write operation to write the data in the non-volatile memory array after the board mount operation is applied. A read margin provided by the special write operation is larger than a read margin provided by the regular write operation.

Abstract: A static random access memory (SRAM) includes an array of storage cells and a first sense amplifier. The array of storage cells is arranged as rows and columns. The rows correspond to word lines and the columns correspond to bit lines. The first sense amplifier includes a first transistor and a second transistor. The first sense amplifier is configured to provide a first read of a first storage cell of the array of storage cells. Based on the first read of the first storage cell failing to correctly read data stored in the first storage cell, the first sense amplifier is configured to increment a body bias of the first transistor a first time. In response to the body bias of the first transistor being incremented, the first sense amplifier is configured to provide a second read of the first storage cell.

Abstract: A method of operating a memory circuit (FIGS. 8A and 8B) is disclosed. The method includes writing true data (01) to a plurality of bits (B0, B1). A first data state (0) is written to a signal bit (Bi) indicating the true data. The true data is read and complementary data (10) is written to the plurality of bits. A second data state (1) is written to the signal bit indicating the complementary data.

Abstract: A memory includes multiple non-volatile memory devices, each having multiple nonvolatile memory cells. A write controller is configured to stream bits to the memory devices using a write data channel that optimizes a speed of writing to the memory devices to provide writes at a first speed. A read controller is configured to read bits from the memory devices, at a second speed slower than the first speed, using a read channel. A bi-directional bus that both the write controller and the self-referenced read controller share to access the plurality of non-volatile memory devices.

Abstract: Systems, methods, and other embodiments associated with using a local voltage regulator embedded within a memory sub-array are described. In one embodiment, a memory device includes a memory sub-array including a set of memory cells and a local voltage regulator. The local voltage regulator is configured to generate a local voltage for powering the memory sub-array. The memory device includes switch logic connected to the memory sub-array and configured to select between the local voltage and a source voltage to power the memory sub-array. The source voltage is provided to the memory device by a host device.

Abstract: A method of improving an error checking and correction performance of a memory includes replacing a defective column including a defective memory cell of the memory cell array with a spare column of a the spare cell array, wherein the memory cell array includes memory cells in a matrix and the spare cell array includes spare memory cells in a matrix to be replaced for defective memory cells; storing check bits of error correction code in at least one memory cell of the defective column; storing defect information regarding a defect of the defective memory cell; determining whether the at least one memory cell storing the check bits is to be used to perform error checking and correction on a memory, based on the defect information; and performing error checking and correction on the memory using a memory cell selected based on a result of determining whether the at least one memory cell storing the check bits is to be used.

Abstract: A system for interfacing with a co-processor or input/output device is disclosed. According to one embodiment, the system provides a one-hot address cache comprising a plurality of one-hot addresses and a host interface to a host memory controller of a host system. Each one-hot address of the plurality of one-hot addresses has a bit width. The plurality of one-hot addresses is configured to store the data associated with a corresponding memory address in an address space of a memory system and provide the data to the host memory controller during a memory map learning process. The plurality of one-hot addresses comprises a zero address of the bit width and a plurality of non-zero addresses of the bit width, and each one-hot address of the plurality of non-zero addresses of the one-hot address cache has only one non-zero address bit of the bit width.

Abstract: According to one general aspect, a method may include receiving a digital circuit model that includes models of a clock mesh and a plurality of logic circuits, each logic circuit associated with end-points of the logic circuit. The method may also include identifying a cluster of end-points, wherein the cluster is associated with a common version of the clock signal. The method may also include identifying an associated skew-schedule for each end-point. The method may include determining a timing slack and skew schedule for each end-point within the cluster. The method may include adjusting a clock-gater cell, based upon a common push/pull schedule associated with the cluster. The method may further include inserting, for at least one end-point of the cluster, a skew-buffer, wherein a variant of the skew-buffer for a respective end-point is based upon a difference between the end-point's skew schedule and the common push/pull schedule.

Abstract: Semiconductor memory testing devices and methods are disclosed. In one respect, a device is disclosed that includes a first memory cell array having a first bit-line and a plurality of first memory cells connected to the first bit-line; a second memory cell array having a second bit-line and a plurality of second memory cells connected to the second bit-line, the number of second memory cells being smaller than that of the first memory cells; a sense amplifier connected to the first bit-line and a first end of the second bit-line; a word decoder configured to operate the second memory cells responsive to a first test signal; and a transistor coupled to a second end of the second bit-line and operated by a second test signal.

Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.

Abstract: A memory controller issues a targeted refresh command. A specific row of a memory device can be the target of repeated accesses. When the row is accessed repeatedly within a time threshold (also referred to as “hammered” or a “row hammer event”), physically adjacent row (a “victim” row) may experience data corruption. The memory controller receives an indication of a row hammer event, identifies the row associated with the row hammer event, and sends one or more commands to the memory device to cause the memory device to perform a targeted refresh that will refresh the victim row.

Abstract: Systems and methods of managing memory devices provide for reduced power consumption and better thermal management through enhanced memory throttling. In one embodiment a memory unit includes a memory device and a temperature measurement module coupled to the memory device. The temperature measurement device measures the internal temperature of the memory device. Memory throttling can therefore be implemented based on more accurate measurements and with a much shorter response time.

Abstract: Systems and methods are disclosed for testing performance of communications interfaces of computing devices. An electronic device tester is disclosed including a downstream communication interface configured to communicatively couple the electronic device tester to a device under test (DUT), wherein the electronic device tester is configured to identify a first internal hub of the DUT over the downstream communication interface, identify a second hub device connected to the DUT over a downstream interface port of the DUT, verify performance of the downstream interface port of the DUT at a first data rate by receiving data over a first downstream port of the second hub device via the downstream interface port of the DUT, and verify performance of the downstream interface port of the DUT at a second data rate by receiving data over a second downstream port of the second hub device via the downstream interface port of the DUT.

Abstract: An aspect includes reading a plurality of sensor values from a plurality of sensors located on a plurality of memory dies in the HMC. It is determined that one of the plurality of sensor values from a sensor located on one of the plurality of memory dies has exceeded a threshold value. Based on the determining and on the one of the plurality of sensor values, calculating a refresh rate for the memory locations on the one of the plurality of memory dies. The vault controller is reconfigured to apply the calculated die refresh rate to the memory locations in the vault that are located on the one of the plurality of memory dies. The calculated die refresh rate is different than an other refresh rate being applied to memory locations in the vault that are located on an other one of the plurality of memory dies.

Abstract: A post-fabrication debug and on-line error checking framework for 2D- and 3D-ICs with integrated memories is described. A design-for-debug (DfD) architecture can include, for an IC with on-chip memory, a debug module connected to a functional bus of the IC. The debug module receives trace data for an interval, generates compact signatures based on the received data, and compares these signatures to expected signatures. Intervals containing erroneous trace data can be identified by the debug module and stored in on-chip memory. A single iteration of signal tracing for debug testing between automated test equipment and the IC is possible.