Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.

Abstract: According to certain aspects, a memory subsystem is coupled to a memory controller of a host computer system via an interface. The memory subsystem comprises dynamic random access memory elements and a memory subsystem controller. During a normal memory read or write operation, the memory subsystem controller is configured to receive address and command signals associated with the memory read or write operations and to control the dynamic random access memory elements in accordance with the address and command signals. The memory subsystem controller is further configured to output via the open drain output a parity error signal in response to a parity error having occurred during the memory read or write operation. During an initialization operation, the memory subsystem controller is configured to output via the open train output a signal related to one or more parts of initialization operation sequences.

Abstract: Systems, methods, and apparatus related to a multi-level error correction architecture used for copying data in memory devices. In one approach, user data is stored in the first partition of a non-volatile memory. First error correction code data is generated for the user data and stored with the user data in the first partition. Second error correction code data is generated for the user data and stored outside the first partition. The second error correction code data provides an increased error correcting capability that is compatible with the error correction algorithm used with the first error correction code data. A copyback operation is used to copy the user data and the first error correction code, but not the second error correction code, to a second partition of the non-volatile memory. The second error correction code can be selectively used if there is a need to recover portions of the user data stored in the first partition.

Abstract: Techniques for implementing and/or operating an apparatus, which includes a host system, a memory system, and a shared memory bus. The memory system includes a first memory type that is subject to a first memory type-specific timing constraint and a second memory type that is subject to a second memory type-specific timing constraint. Additionally, the shared memory bus is shared by the first memory type and the second memory type. Furthermore, the apparatus utilizes a first time period to communicate with the first memory type via the shared memory bus at least in part by enforcing the first memory type-specific timing constraint during the first time period and utilizes a second time period to communicate with the second memory type via the shared memory bus at least in part by enforcing the second memory type-specific timing constraint during the second time period.

Abstract: Systems, methods and apparatuses to control power usage of a data storage device. For example, the data storage device has a temperature sensor configured to measure the temperature of the data storage device are provided. A controller of the data storage device determines a set of operating parameters that identify an operating condition of the data storage device. An inference engine of the data storage device determines, using an artificial neural network in the data storage device and based on the set of operating parameters, an operation schedule for a period of time of processing input and output of the data storage device. The operation schedule is configured to optimize a performance of the data storage device in the period of time without the temperature of the data storage device going above a threshold.

Abstract: A semiconductor storage device includes a memory cell and a control circuit configured to, upon receipt of a command, acquire a first temperature measured by a temperature sensor, and perform an operation corresponding to the command using a parameter corrected based on temperature. When the first temperature is within a predetermined range with respect to a second temperature measured before the command is received, the parameter is corrected using the second temperature. When the first temperature is outside the predetermined range, the parameter is corrected using the first temperature.

Abstract: A repair method of a memory includes dividing a plurality of general bits into a plurality of first groups and dividing a plurality of redundancy bits into a plurality of second groups. When one of the plurality of first groups has a defective bit, one of the plurality of second groups is selected to replace the first group which has the defective bit. Because the repair method uses a group as a repair unit, a repair circuit is simpler and smaller and a processing speed of the repair circuit is faster.

Abstract: Devices and techniques to reduce corruption of received data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, in a first mode until the received data exceeds a threshold amount, and to transition from the first mode to a second mode after the received data exceeds the threshold amount.

Abstract: An apparatus is described. The apparatus includes a solid state drive (SSD) controller that includes logic circuitry to perform an event based hottest non volatile memory die identification process in which one or more different hottest non volatile memory die within the SSD are able to be identified over an operational time period of the SSD in response to different respective events that arise during the operational time period.

Abstract: Provided are a computer program product, system, and method for using a machine learning module to determine when to perform error checking of a storage unit. Input on attributes of at least one storage device comprising the storage unit are provided to a machine learning module to produce an output value. An error check frequency is determined from the output value. A determination is made as to whether the error check frequency indicates to perform an error checking operation with respect to the storage unit. The error checking operation is performed in response to determining that the error checking frequency indicates to perform the error checking operation.

Abstract: A personal electronic device can include a main printed circuit board having disposed thereon a processing unit, one or more auxiliary circuits coupled to the main printed circuit board by one or more corresponding flexible printed circuits and one or more temperature sensors disposed on one of the flexible printed circuits. A processing unit of the portable electronic device can be configured to monitor the one or more temperature sensors, provide a warning in response to a monitored temperature exceeding a first threshold, and to cause a shutdown of at least a portion of the personal electronic device in response to the monitored temperature exceeding a second threshold. The temperature sensors can be negative temperature coefficient resistors.

Abstract: The present disclosure discloses a memory device including a control system for thermal throttling. The control system acquires the temperature of a non-volatile memory element from a temperature detector at a first frequency. Upon determining that the temperature of the non-volatile memory element is above a pre-determined threshold, the control system acquires the temperature of the non-volatile memory element from the temperature detector at a second frequency that is higher than the first frequency and activates the thermal throttling for the non-volatile memory element.

Abstract: A memory device that includes a driver IC, a voltage-dividing resistor, at least two noise-suppressing resistors and at least three memory ICs is provided. A terminal of the voltage-dividing resistor is electrically coupled to a voltage source and another other terminal of the voltage-dividing resistor is electrically coupled to the driver IC through an end a connection path. One of the memory ICs is electrically coupled to the voltage-dividing resistor and the driver IC through the end the connection path. Each of at least two of the other memory ICs is electrically coupled to the connection path through one of the noise-suppressing resistors and is further electrically coupled to the driver IC.

Abstract: A data storage device equipped with a plurality of thermometers configured to detect temperature of different regions of a non-volatile memory. A controller of the data storage device is configured to operate the non-volatile memory to heat up a target region of the non-volatile memory according to a regional temperature detected by a target thermometer corresponding to the target region.

Abstract: A dual in-line memory module (DIMM) thermal control system for intelligent DIMM thermal controls for maximum uptime may include a memory subsystem. The memory subsystem may include a first DIMM and a first serial presence detect (SPD) module associated with the first DIMM. The DIMM thermal control system may also include a baseboard management controller (BMC). The BMC may, when a first DIMM failure of the first DIMM may be detected, record a first failure event in a first failure events log of the first SPD module. The first failure event may comprise the first DIMM failure and associated first thermal telemetry data of the first DIMM. The BMC may also adjust DIMM thermal control settings to reduce temperature of the first DIMM based on the first failure events log including at least the first failure event.

Abstract: Devices and techniques to reduce corruption of received data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, in a first mode until the received data exceeds a threshold amount, and to transition from the first mode to a second mode after the received data exceeds the threshold amount.

Abstract: Data reliability and integrity may be compromised when memory resources used to store the data reach elevated temperatures. A sensor in the memory resource may monitor the temperature of the memory resource in real-time. A comparator in the memory resource may indicate a high temperature condition to a memory controller. The memory controller, in response to the high temperature condition, can restrict or halt data flow to the memory resource. When the real-time temperature of the memory resource falls below a defined threshold, the memory controller may resume data flow to the memory resource.

Abstract: A controller controls an operation of a semiconductor memory device including a plurality of memory blocks. The controller includes a temperature sensing unit, a period storage unit, and a command generating unit. The temperature sensing unit generates temperature information by sensing a temperature of the semiconductor memory device. The period storage unit updates an output period of a dummy read command that allows the semiconductor memory device to perform a dummy read operation, based on the temperature information. The command generating unit generates the dummy read command, based on the output period.

Abstract: The subject technology performs the following in a storage system including memory dies, where each memory die includes its own temperature sensor. The subject technology determines a temperature of each of the memory dies based on a temperature reading from each memory die's temperature sensor. The subject technology determines whether data is hot data or cold data, where hot data is more likely to be changed after it is written than cold data. In response to determining that the data is hot data, the subject technology stores the data in a memory die with a relatively higher temperature than another one of the memory dies. Further, in response to determining that the data is cold data, the subject technology stores the data in a memory die with a relatively cooler temperature than another one of the memory dies.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory configured to store data; an error correcting circuit configured to correct an error in data read from the memory, and to generate a first signal of a first state, which is transmitted to an external along with the data if the error in the data cannot be corrected; and a first pin configured to transmit the first signal to the external and receive a data mask signal from the external.

Abstract: A Magnetic Random Access Memory (MRAM) array has a plurality of main MRAM bitcells and a plurality of canary MRAM bitcells in which a first Magnetic Tunnel Junction (MTJ) diameter of each of the main MRAM bitcells is larger than any second MTJ diameter of any of the canary bitcells. Test circuitry is configured to periodically poll the canary bitcells to determine if values stored at the canary bitcells match expected canary values. When the values do not match the expected canary values, the test circuitry is configured to indicate a presence of a magnetic field, and in response to determining the presence of the magnetic field, continue to poll the canary bitcells until the values match the expected canary values which indicates the magnetic field is no longer present.

Abstract: A partitioned Bloom filter is disclosed. In various embodiments, a representation of an item is received. The representation is used to determine a partition with which the item is associated. A partition-specific Bloom filter is used to determine at least in part whether the item may be an element of a set with which the partition is associated.

Abstract: An apparatus includes a reference voltage circuit having a bandgap input and a reference voltage output. The apparatus also includes a digital-to-analog converter (DAC) coupled to the reference voltage output and having a digital signal input. The apparatus includes an amplifier having a first input coupled to an output of the DAC. The first input is coupled to an output of the amplifier via a feedback resistor. The apparatus includes a resistor coupled to the reference voltage output and having a body terminal coupled to the output of the amplifier.

Abstract: A memory module may include a first memory module comprising a plurality of first memory devices each having an extra memory region, a second memory module comprising a plurality of second memory devices each having an extra memory region, and a control logic suitable for writing/reading data to/from the first memory devices, wherein the control logic writes/reads target data to be transferred to/from a third memory device having an error among the first memory devices, to/from the extra memory regions of the second memory devices.

Abstract: A device includes a memory device and a controller. The memory device includes read/write circuitry and a plurality of memory dies. The controller is coupled to the memory device. The controller is configured to, responsive to determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition, increase the temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature.

Abstract: Some embodiments provide an optimized multi-hit caching technique that minimizes the performance impact associated with caching of long-tail content while retaining much of the efficiency and minimal overhead associated with first hit caching in determining when to cache content. The optimized multi-hit caching utilizes a modified bloom filter implementation that performs flushing and state rolling to delete indices representing stale content from a bit array used to track hit counts without affecting identification of other content that may be represented with indices overlapping with those representing the stale content. Specifically, a copy of the bit array is stored prior to flushing the bit array so as to avoid losing track of previously requested and cached content when flushing the bit array and the flushing is performed to remove the bit indices representing stale content from the bit array and to minimize the possibility of a false positive.

Abstract: Techniques are provided for reducing program disturb and short term data retention loss. Program disturb becomes worse for the drain-side memory cells at higher temperatures, while data retention generally does not become worse at higher temperatures. In one aspect, a deeper erase is provided for drain-side memory cells when the temperature is relatively high, to reduce program disturb. In another aspect, the verify levels of the programmed data states are lowered to reduce data retention loss when the temperature is relatively high. In another aspect, the number of read errors is used to adjust the depth of the depth of the erase operation. In another aspect, a pass voltage of a drain-side cell is lowered during a verify test for another cell to account for the deep erase of the drain-side cell.

Abstract: A first threshold temperature is maintained for operating a solid state drive (SSD) in a first mode. A second threshold temperature is maintained for operating the SSD in a second mode in which read and write operations are performed at a higher rate than in the first mode, wherein the second threshold temperature is higher than the first threshold temperature. The SSD is switched from the first mode to the second mode, in response to an operating temperature of the SSD exceeding the first threshold temperature.

Abstract: A memory controller for dual-channel DDR DIMMs comprises a first memory channel configured to execute a first memory transaction with a first memory device of a dual-channel DDR DIMM, and a second memory channel configured to execute a second memory transaction with a second memory device of the dual-channel DDR DIMM. The memory controller is configured to determine that the first memory channel is experiencing a degraded performance level in executing the first memory transaction with the first device, and to prevent read-write memory transactions and write-read memory transactions on the first and second memory channels in response to determining that the first memory channel is experiencing the degraded performance level.

Abstract: A semiconductor memory device includes an oscillating signal generation section suitable for generating an oscillation signal oscillating with a period, which is defined by a predetermined temperature-period function, a period control section suitable for controlling the period of the oscillation signal according to a combination of two or more predetermined temperature-period functions, which are different from one another, in response to a refresh characteristic information, and a memory cell array suitable for performing a refresh operation in response to the oscillation signal.

Abstract: Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.

Abstract: A method for controlling the temperature of a semiconductor device-under-test (DUT) by forming an apparatus (100) including a feedback loop between a Temperature Forcing Unit (TFU, 110) conductively tied to an Automated Test Equipment (ATE, 120) having a chamber encasing the DUT (122), and the ATE conductively connected to a Control Computer (CC, 130) conductively tied back to the TFU. The CC is calibrated with reference values of temperatures and measured voltages using a diode integral with a diode-isolated circuit protecting a pin of the DUT against electrostatic discharge. The thermal air stream to stabilize the temperature of the ATE chamber loaded with the DUT is reset by the CC until the DUT is stabilized at the goal temperature.

Abstract: Systems and methods for reducing problems and disadvantages associated with protecting data during cold excursions are provided. A method for preventing unreliable data operations at cold temperatures may include determining whether a first temperature of a solid state drive (SSD) is below a threshold temperature. The method may also include initiating an artificial read/write operation if the first temperature is below the threshold temperature.

Abstract: Methods for reducing cross-temperature dependent word line failures using a temperature dependent sensing scheme during a sensing operation are described. In some embodiments, during a read operation, the sensing conditions applied to memory cells within a memory array (e.g., the sensing time, source line voltage, or bit line voltage) may be set based on a temperature of the memory cells during sensing and a word line location of the memory cells to be sensed. In one example, the memory array may comprise a NAND memory array that includes a NAND string and the sensing time for sensing a memory cell of the NAND string and the source line voltage applied to a source line connected to a source end of the NAND string may be set based on the temperature of the memory cells during sensing and the word line location of the memory cells to be sensed.

Abstract: Methods for reducing cross-temperature threshold voltage distribution widening by applying a temperature dependent sensing scheme during read operations are described. In some embodiments, during a read operation, the sensing conditions applied to memory cells within a memory array (e.g., the sensing time and the read voltage applied to the memory cells during the sensing time) may be set and/or adjusted based on a temperature of the memory cells during the read operation, a previous temperature of the memory cells when the memory cells were programmed, and the programmed states of neighboring memory cells. In some cases, the sensing time for sensing a memory cell of a NAND string and the source voltage applied to a source line connected to the NAND string may be set based on the temperature of the memory cells during sensing and the previous temperature of the memory cells when the memory cells were programmed.

Abstract: A semiconductor device includes a temperature code latch circuit and a period selection circuit. The temperature code latch circuit latches a count code having a logic level combination corresponding to an internal temperature to output the latched count code as a temperature code. The period selection circuit selects a period of a refresh signal in response to the temperature code. A period variation rate of the refresh signal according to variation of the internal temperature is controlled by a first gradient selection signal in a first temperature section and is controlled by a second gradient selection signal in a second temperature section.

Abstract: A data storing system includes a semiconductor device suitable for repeatedly performing a read operation by changing a level of a read voltage according to read voltages listed on a read retry table when a read operation on a selected page is passed, in response to a command and an address, and a controller suitable for controlling the read operation of the semiconductor device by generating the command and the address, wherein a read voltage to be used for performing the read operation is determined among the read voltages listed on the read retry table when the semiconductor device performs the read operation based on data read as a result of a predetermined number of read operations.

Abstract: A resistive memory apparatus includes a plurality of bit lines, a plurality of local bit lines, and a plurality of global bit lines. The plurality of bit lines is electrically coupled to a plurality of memory cells. The plurality of local bit lines are extended in a row direction, and electrically coupled to one or more of the plurality of bit lines. The plurality of global bit lines are extended in the column direction, and electrically coupled to one or more of the plurality of local bit lines.

Abstract: Systems and methods for reducing problems and disadvantages associated with protecting data during cold excursions are provided. A method for preventing unreliable data operations at cold temperatures may include determining whether a first temperature of a solid state drive (SSD) is below a threshold temperature. The method may also include initiating an artificial read/write operation if the first temperature is below the threshold temperature.

Abstract: A method includes, in one implementation, performing a memory operation to place memory cells of a memory array to a first logic state using a voltage of a charge pump. A portion of the operation is performed on the memory cells using the voltage of the charge pump. A temperature of the memory array is compared to a threshold. If the temperature is above a reference level, a load on the charge pump is reduced by providing the voltage to only a reduced number of memory cells.

Abstract: A semiconductor memory device is provided which includes a memory cell array including magnetic memory cells arranged in a matrix form of rows and columns and connected with bit lines and a source line; and a temperature sensing unit configured to generate a temperature sensing signal by sensing a temperature of the memory cell array. A memory controller, constituting a memory system together with the semiconductor memory device, may control read and write operations of the semiconductor memory device differently according to the temperature sensing signal of the temperature sensing unit.

Abstract: A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.

Abstract: A semiconductor device including a control signal generator and an internal refresh signal generator is provided. The control signal generator generates first and second control signals, one of which is selectively enabled in response to temperature code signals and mode set signals after a pulse of an internal refresh signal is outputted by the internal refresh signal generator. The temperature code signals are obtained from temperature signals. The internal refresh signal generator outputs a refresh command signal as the internal refresh signal when the first control signal is enabled. Further, the internal refresh signal generator outputs the refresh command signal as the internal refresh signal at a moment that the refresh command signal is inputted thereto by a predetermined number of times when the second control signal is enabled.

Abstract: A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration. The flash memory configuration includes a plurality of memory cells, where each memory cell has a charge storage capacity for use in implementing digital storage. The apparatus includes a processing arrangement configured to access each of the memory cells in a write operation and a read operation. The apparatus also includes an instruction set for instructing the processor to impose target charge levels for defining a plurality of data values for each of the memory cells. The target charge levels are programmably movable with respect to the charge storage capacity.

Abstract: A nonvolatile memory system includes a memory controller chip with at least one temperature sensor that is individually calibrated, at a single temperature, after the nonvolatile memory system is assembled, so that the calibration data is stored outside the memory controller chip, in a nonvolatile memory chip, thus obviating the need for components to store calibration data in the memory controller chip.

Abstract: Apparatus and methods level shift a direct current (DC) component of a voltage rail signal from a first DC level to a second DC level such that voltage rail noise can be determined. The actual voltage rail noise can be compared to an expected amount of noise for analysis and validation of simulation models. Such assessment can be used to validate simulation models used to refine a design of an integrated circuit or as part of built-in self test.

Abstract: A period signal generation circuit includes a first discharger configured to discharge first current having a constant value from a control node in response to a temperature signal; and a second discharger configured to discharge second current varying according to an internal temperature thereof from the control node in response to the temperature signal.

Abstract: A temperature sensing device can be embedded in a memory module or system in order to sense the temperature of the memory module or system. One oscillator generates a temperature variable signal that increases frequency as the temperature of the oscillator increases and decreases frequency when the temperature of the oscillator decreases. A temperature invariant oscillator generates a fixed width signal that is controlled by an oscillator read logic and indicates a temperature sense cycle. An n-bit counter is clocked by the temperature variable signal while the fixed width signal enables/inhibits the counter. The faster the counter counts, the larger the count value at the end of the sense cycle indicated by the fixed width signal. A larger count value indicates a warmer temperature. A smaller count value indicates a colder temperature.

Abstract: A period signal generation circuit includes a first discharger configured to discharge first current from a control node which is driven in response to a first reference voltage, and a second discharger configured to discharge second current from the control node. The total current of the first and second currents is substantially constant when an internal temperature of the discharge controller is below a predetermined temperature, and the total current of the first and second currents varies as the internal temperature increases over the predetermined temperature.

Abstract: A period signal generation circuit includes a period signal generator configured to alternately charge and discharge a control node according to a level of the control node to generate a period signal, a discharge controller configured to discharge a first current having a constant value from the control node in response to a temperature signal and discharge a second current varying according to an internal temperature thereof from the control node in response to the temperature signal, and a tester configured to control a charging speed and a discharging speed of the control node.