Abstract: An information processing apparatus may include a housing, a board accommodated inside the housing, a plurality of memories mounted on the board, a temperature sensor mounted on the board to be adjacent to one of the memories, and a memory controller mounted on the board to be adjacent to the temperature sensor and configured to acquire temperature information detected by the temperature sensor. The temperature sensor may be mounted on a central portion of the board so as to be positioned between one side of the memory controller and one side of the one of the memories. Other embodiments are also described.

Abstract: A phase change memory with switch (PCMS) compensates for threshold voltage drift by utilizing a lower demarcation voltage for a verify operation after programming than for a read operation occurring at least a predetermined period of time after the programming operation.

Abstract: A method and apparatus for a memory device is provided. The memory device includes a memory cell, a memory controller, and a temperature-sensing device that detects a temperature. The memory controller enables adjusting, based on the detected temperature, a parameter associated with a bit-altering operation to the memory cell that changes a threshold voltage of the memory cell such that the threshold voltage to which the memory cell is changed to by the bit-altering operation is compensated for variations in temperature.

Abstract: Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat the memory IC in response to a signal from the thermal sensor. Other aspects are also provided.

Abstract: A hard-disk drive (HDD) is described. During operation of the HDD, measured internal temperatures in the HDD may be stored in a first table, and state information specifying operational states of the HDD associated with ranges of internal temperatures may be stored in a second table. Note that a given operational state in the second table may be associated with a corresponding internal temperature in the first table. Furthermore, during operation of the HDD, the first table and/or the second table may be stored on: a rotatable medium in the HDD, a semiconductor memory in the HDD, or both. This stored table information may facilitate error detection and diagnosis.

Abstract: A method of a flash memory storage device using Read Retry method is disclosed. This method includes using a thermal sensor to records temperature information while programming flash memory, and using this temperature information to compensate the temperature difference between program and read operation to improve Read Retry performance.

Abstract: A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.

Abstract: A system and method are provided for using a system-on-chip (SoC) memory speed control logic core to control memory maintenance and access parameters. A SoC is provided with an internal hardware-enabled memory speed control logic (MSCL) core. An array of SoC memory control parameter registers is accessed and a set of parameters is selected from one of the registers. The selected set of parameters is delivered to a SoC memory controller, to replace an initial set of parameters, and the memory controller manages an off-SoC memory using the delivered set of parameters.

Abstract: A memory element in which the temperature coefficient of a memory cell substantially matches the temperature coefficient of a reference cell and tuning either the temperature coefficient of a memory cell to substantially match the temperature coefficient of the reference cell provides for improved precision of sensing or reading memory element states, particularly so as to minimize the affect of temperature variations on reading and sensing states.

Abstract: A semiconductor device includes a memory cell, a first bit line coupled to the memory cell, a second bit line, a first sense amplifier circuit including first and second transistors, the first transistor including a gate coupled to the first bit line, and the first and second transistors are coupled in series between the second bit line and a first voltage line, a temperature detection circuit configured to detect a temperature of the semiconductor device, and a control circuit configured to receive an output of the temperature detection circuit and supply a control signal to a gate of the second transistor.

Abstract: A data storage device includes a plurality of memory devices and a memory controller. The memory controller exchanges data with the plurality of memory devices via a plurality of channels and adjusts drive strength of the plurality of channels by referring to at least one of the number of the plurality of memory devices and current temperature.

Abstract: A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.

Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.

Abstract: A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.

Abstract: A circuit for compensating a temperature measurement range of a semiconductor memory apparatus is presented. The circuit includes an oscillator, a temperature variable pulse generating unit, a counter, and an output controlling unit. The counter enable signal generating unit inputs a temperature pulse and outputs a counter enable signal corresponding to the temperature pulse in response to receiving a control signal. The counter inputs and counts an oscillator signal in response to receiving the counter enable signal and outputs a counting signal. The output controlling unit outputs a temperature information code signal proportional to the counting signal or to output the temperature information code signal at a fixed level corresponding to a maximum value of the counting signal.

Abstract: Provided is a semiconductor memory device. The semiconductor memory device includes: a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode, wherein the voltage generator adjusts the DC voltage according to offset information about the semiconductor memory device.

Abstract: A mobile System on Chip (SoC) comprises a microprocessor and a first memory controller configured to control a refresh of a first memory. A temperature sensor detects a temperature in the first memory. When first temperature information received from the temperature sensor indicates that the detected temperature deviates from a predetermined temperature range, the first memory controller controls the first memory so as not to perform a self refresh. When second temperature information received from the temperature sensor indicates that the detected temperature is in the predetermined temperature range, the first memory controller outputs a self refresh command to the first memory.

Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.

Abstract: A stream data reproducing system comprising: an input buffer configured to accumulate stream data input from a stream source; a decode circuit configured to decode the stream data accumulated in the input buffer by predetermined processing unit to generate decode data; an output buffer configured to output the decode data after accumulation thereof; a transfer memory cell configured to store the stream data accumulated in the input buffer and the decode data generated in the decode core circuit; and a data transfer control circuit configured to control transfer of the stream data by the processing unit from the input buffer to the transfer memory cell, and transfer of the decode data by the processing unit from the transfer memory cell to the output buffer.

Abstract: A nonvolatile memory device includes a memory cell array with a matrix of nonvolatile memory cells. The nonvolatile memory cells may store data using variable resistive elements. A plurality of bitlines are coupled to a plurality of nonvolatile memory cell arrays in the memory cell array. A column selection circuit selects among the bitlines in response to a column selection signal. A controller regulates a level of the column selection signal in response to a temperature signal from a temperature sensor. The temperature sensor may be configured to measure temperature outside the nonvolatile memory device to generate the temperature signal.

Abstract: A system LSI (100) having a logic circuit (104) and a plurality of SRAM macros (103) includes a power supply circuit (102) configured to receive a voltage (VDDP) supplied from the outside of the system LSI (100), and to generate a stabilized voltage (VDDM) lower than the voltage (VDDP). An SRAM memory cell (103a) of each of the plurality of SRAM macros (103) is supplied with the voltage (VDDM) generated by the power supply circuit (102), and an SRAM logic circuit (103b) of each of the plurality of SRAM macros (103) is supplied with a voltage (VDD) supplied from the outside. In addition, the logic circuit (104) is supplied with the voltage (VDD) from the outside.

Abstract: A memory chip and method for operating the same are provided. The memory chip includes a number of pads. The method includes inputting a number of first test signals to the pads respectively, wherein the first test signals corresponding to two physically-adjacent pads are complementary; inputting a number of second test signals, respectively successive to the first test signals, to the pads, wherein the first test signal and the second test signal corresponding to each of the pads are complementary; and outputting expected data from the memory chip if the first test signals and the second test signals are successfully received by the memory chip.

Abstract: A temperature sensing system, which comprises: a temperature analyzing circuit, for sensing temperature and generating an analyzing result in response to the sensed temperature; and a control unit, for controlling a temperature sensing time interval; wherein the control unit continuously changes the temperature sensing time interval according to a predetermined temperature range in response to the sensed temperature.

Abstract: An information processing apparatus including: a main unit; a cooling fan that suctions open air into the main unit to cool inside the main unit with an air flow; and a nonvolatile semiconductor storage device that is provided within the main unit to be used as an external storage device, the device including: a printed circuit board; a nonvolatile semiconductor memory that is mounted on the printed circuit board; a memory controller that is mounted on the printed circuit board and controls the nonvolatile semiconductor memory; and a temperature sensor that is mounted on the printed circuit board and detects temperature within the nonvolatile semiconductor storage device, wherein the memory controller is disposed at an upstream side of the air flow and the temperature sensor is disposed at a downstream side of the air flow.

Abstract: An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.

Abstract: There is provided a semiconductor device which can maintain a high tuning accuracy while suppressing a cost increase and suppress an increase in the time required for tuning. There are included, in addition to variable resistors configuring a level shift circuit, an additional resistor coupled between the output node of a VBGR voltage of a BGR circuit and one of the variable resistors and an additional resistor coupled between the other of the variable resistors and a reference voltage. N-channel MOS transistors are coupled in parallel with the additional resistors, respectively.

Abstract: A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.

Abstract: A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.

Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the node supplies the reference voltage. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.

Abstract: A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit generates a voltage that is linearly dependent on the temperature. A level generator circuit generates 2n?1 voltage levels from the reference voltage. A comparator circuit, such as an analog-to-digital circuit, compares the voltage from the temperature sensor to the 2n?1 voltage levels to determine which level is closest. An n-bit digital output of the resulting level is proportional to the temperature of the integrated circuit.

Abstract: A temperature sensor generates a digital representation of the temperature of the integrated circuit. A logic circuit reads the digital temperature and generates a multiple bit digital representation of an operational voltage and a multiple bit digital representation of a timing signal, both being functions of the integrated circuit temperature. A voltage generator converts the digital representation of the operational voltage to an analog voltage that biases portions of the integrated circuit requiring temperature compensated voltages. In one embodiment, the temperature compensated voltages bias memory cells. A timing generator converts the multiple bit digital representation of the timing signal to a logic signal.

Abstract: A circuit for compensating a temperature measurement range of a semiconductor memory apparatus is presented. The circuit includes an oscillator, a temperature variable pulse generating unit, a counter, and an output controlling unit. The counter enable signal generating unit inputs a temperature pulse and outputs a counter enable signal corresponding to the temperature pulse in response to receiving a control signal. The counter inputs and counts an oscillator signal in response to receiving the counter enable signal and outputs a counting signal. The output controlling unit outputs a temperature information code signal proportional to the counting signal or to output the temperature information code signal at a fixed level corresponding to a maximum value of the counting signal.

Abstract: A temperature detection circuit of a semiconductor memory apparatus includes a fixed period oscillator, a temperature variable signal generating unit and a counting unit. The oscillator is configured to generate a fixed period oscillator signal when an enable signal is enabled. The temperature variable signal generating unit is configured to generate a temperature variable signal whose enable interval varies based on temperature variations, when the enable signal is enabled. The counting unit is configured to count the oscillator signal during the enable interval of the temperature variable signal to generate a temperature information signal.

Abstract: In some embodiments the continuous measuring of temperature in remote memory devices operating within an electrically noisy environment is facilitated by coordinating the progressive approximation of temperature within quiescent periods of non-activity as known by a memory controller.

Abstract: A semiconductor memory arrangement includes a substrate, a first control device disposed on the substrate and adapted to receive command and address signals, a second control device, and a plurality of memory units. The second control device is adapted to receive the command and address signals from the first control device and to transmit the command and address signals to the memory units of the plurality of memory units.

Abstract: A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.

Abstract: Memory component temperature information is used to implement a method for ODT (on die termination) thermal load management. A respective temperature of a plurality of memory components are accessed, and based on this temperature, an ODT cycle is directed to a first of the memory components to avoid imposing a thermal load from the ODT cycle on a second of the memory components.

Abstract: A temperature compensation circuit includes a voltage generator, a comparator and an emulation cell array. The voltage generator provides a predetermined voltage and a reference voltage. The comparator has a first terminal for receiving the predetermined voltage, and a second terminal for receiving the reference voltage. The emulation cell array is coupled to the first terminal of the comparator. When a voltage of the first terminal of the comparator is discharged, via the emulation cell array, to be lower than the reference voltage, the comparator outputs a read timing control signal to control a sense amplifier to perform a sensing operation.

Abstract: An information handling system includes a processor having access to a system memory. The system is operable to detect a thermal alert and identify an associated portion of system memory. The system may then modify memory allocation information used by an operating system to allocate system memory. When the thermal alert indicates a rising memory module temperature that exceeds a specified threshold, the modification of the memory allocation information causes the memory to appear to be more “distant” from the system processor(s) and thereby allocated less preferentially than other memory. If the temperature continues to rise beyond a higher threshold, a second modification of the memory allocation information is performed to simulate a “hot eject” of the memory module. As the memory module cools, the memory allocation information can be restored to simulate a hot add of the memory module and to restore the proximity of the memory module.

Abstract: Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response to a signal from the thermal sensor. The methods may include sensing a temperature of a memory IC using an integrated thermal sensor on the memory IC and heating the memory IC, using an integrated heating element operatively coupled to the thermal sensor, if the sensed temperature is below a threshold temperature.

Abstract: Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating temperature slope level and controlling a reference voltage(s) associated with a word-line(s) and/or bit-line(s) to facilitate execution of operations in a memory, while also controlling a respective current level(s) associated with the reference voltage to minimize errors in the memory or harm to the memory. The reference voltage can be controlled based on a first resistance and the current level can be controlled based on a second resistance that can be based on the first resistance. An analyzer component can facilitate determining a desired operating temperature slope level. Trim bits can be employed to facilitate setting the first resistance and/or the second resistance.

Abstract: An information processing apparatus including: a main unit; a cooling fan that suctions open air into the main unit to cool inside the main unit with an air flow; and a nonvolatile semiconductor storage device that is provided within the main unit to be used as an external storage device, the device including: a printed circuit board; a nonvolatile semiconductor memory that is mounted on the printed circuit board; a memory controller that is mounted on the printed circuit board and controls the nonvolatile semiconductor memory; and a temperature sensor that is mounted on the printed circuit board and detects temperature within the nonvolatile semiconductor storage device, wherein the memory controller is disposed at an upstream side of the air flow and the temperature sensor is disposed at a downstream side of the air flow.

Abstract: A semiconductor memory device includes a plurality of memory banks; a plurality of temperature sensing circuits, and a shared control circuit. The temperature sensing circuits correspond to the memory banks and each is disposed in the vicinity of a corresponding memory bank. The shared control circuit is connected to the plurality of temperature sensing circuits and a plurality of refresh circuits for refreshing the plurality of memory banks, performs calibration on the plurality of temperature sensing circuits, performs digital processing on signals for separately controlling refresh intervals for the plurality of memory banks, and transmits the processed signals to the plurality of refresh circuits. Therefore, the refresh intervals for individual channels or banks are separately or selectively controlled. Further, since the plurality of temperature sensing circuits are connected to the shared temperature control circuit, the occupied area of the circuits in a chip is reduced or minimized.

Abstract: A solid state semiconductor storage device with temperature control function comprises a non-volatile memory unit, a temperature sensing element, and a control unit. The temperature sensing element is used for sensing the operation temperature of the solid state semiconductor storage device so as to provide a temperature sensing signal to the control unit. According to the temperature sensing signal, the control unit controls the operation mode of the solid state semiconductor storage device for achieving the function of temperature control.

Abstract: A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parallel between an output line and the ground. The voltage is adjusted in response to the surrounding temperature in such a way that a prescribed number of drive MOS transistors selected from among the plurality of MOS transistors are normally and simultaneously driven. Thus, it is possible to precisely adjust the voltage in units of adjustment corresponding to differences of width dimensions without degrading the performance of the semiconductor memory device in a low current consumption mode.

Abstract: A semiconductor memory device includes a mode register, an additional function executer, and an additional function controller. The mode register activates an additional function control signal when a mode register set code indicates that an additional function is to be executed concurrently with a refresh operation. The additional function controller controls the additional function executer to carry out the additional function concurrently with the refresh operation when the additional function control signal is activated.

Abstract: A temperature sensor generates a digital representation of the temperature of the integrated circuit. A logic circuit reads the digital temperature and generates a multiple bit digital representation of an operational voltage and a multiple bit digital representation of a timing signal, both being functions of the integrated circuit temperature. A voltage generator converts the digital representation of the operational voltage to an analog voltage that biases portions of the integrated circuit requiring temperature compensated voltages. In one embodiment, the temperature compensated voltages bias memory cells. A timing generator converts the multiple bit digital representation of the timing signal to a logic signal.

Abstract: A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit generates a voltage that is linearly dependent on the temperature. A level generator circuit generates 2n?1 voltage levels from the reference voltage. A comparator circuit, such as an analog-to-digital circuit, compares the voltage from the temperature sensor to the 2n?1 voltage levels to determine which level is closest. An n-bit digital output of the resulting level is proportional to the temperature of the integrated circuit.

Abstract: Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response to a signal from the thermal sensor. The methods may include sensing a temperature of a memory IC using an integrated thermal sensor on the memory IC and heating the memory IC, using an integrated heating element operatively coupled to the thermal sensor, if the sensed temperature is below a threshold temperature.

Abstract: A semiconductor device temperature sensor produces a reference level for temperature detection from two or more reference levels of different temperatures to detect a temperature. The temperature sensor is applied for detecting the temperature of a semiconductor storage device having a memory unit which requires a refresh action. A refresh cycle control circuit provided in the semiconductor storage device controls the cycle of the refresh action for the memory unit in response to an output of the temperature sensor.