Abstract: A memory array is divided into a plurality of memory blocks each having a plurality of bit line pairs. In the memory block selected for a data write operation, first and second selection gates are turned ON so as to couple first and second nodes to the power supply voltage and the ground voltage, respectively. In the data write operation, complementary bit lines of the same bit line pair are electrically coupled to each other through a bit-line coupling transistor. A bit-line current switching portion connects a plurality of bit line pairs in series between the first and second nodes so that the directions of reciprocating-current paths respectively formed in the plurality of bit line pairs correspond to the respective data levels of a plurality of bits.

Abstract: A circuit on a semiconductor for precharging a local bitline and a global bitline. The circuit includes: a precharge input; a first switch, the gate of the first switch coupled to the precharge input, the source of the first switch coupled to a voltage source, the drain of the first switch coupled to the local bitline; a delay element, the input of the delay element coupled to the precharge input; and a second switch, the gate of the second switch coupled to the output of the delay element, the source of the second switch coupled to the voltage source, the drain of the second switch coupled to the global bitline.

Abstract: A synchronous semiconductor memory device operates an input/output buffer circuit in synchronization with an external clock signal in a single data rate SDRAM operation mode. In a double data rate SDRAM operation mode, an internal clock signal of a frequency two times that of the external dock signal is generated. The input/output buffer circuit is operated in synchronization with the internal dock signal.

Abstract: The column address strobe signal (CAS) which is changed in cycles as many as a plurality of times that of a clock signal cycle is input to the memory block (MBK0 to MBKn). A plurality of serial data readout from the memory cell array (10) and parallel/serial converted by a parallel/serial converter circuit (21) in synchronism with a clock signal cycle are output for every cycle when the column address signal (CASADR) is changed. Parallel data input to the memory block and serial/parallel converted by a serial/parallel converter circuit (25) in synchronism with the clock signal cycle are written in the memory cell array. In this way, the access specification that the column address strobe signal is varied once per n cycles of the clock signal allows for a more rapid memory operation.

Abstract: A method of operating a digital computer includes the steps of addressing a memory, reading a row of data from the memory, providing the same computational instruction simultaneously to each processor element of a plurality of processor elements, where each of the processor elements is selectively coupled to a corresponding bit position of the memory row of data, performing the same computational operation on a selected plurality of data bits in parallel, and writing the result into the memory at the same row from which the data was read.

Abstract: Data of a plurality of memory cells are read on a plurality of first data lines and combined by a combination/rewrite circuit and transmitted on a second data line and the combined data is written back to the first data line. In combining data, the combination/rewrite circuit performs an addition. Mirrored data can be improved in reliability and a function of correcting an error of the mirror data can also be implemented.

Abstract: A circuit configuration and a method for the synchronization of signals include transmitting signals in parallel through data lines and buffer-storing the signals in a synchronizing unit. A clock signal is determined from the signals of a data line and is used for synchronizing the outputting of the signals. The signals are output in the order in which the signals were read. The signals are likewise output through a plurality of data lines, the signals being output temporally synchronously. Propagation time differences are compensated due to the buffer-storage. Moreover, the clock signal is determined from the signals themselves. Consequently, the use of an additional clock signal is not necessary.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A memory system usable for a multi-casting switch or similar device includes memory which can be dynamically allocated among two or more output ports. The memory includes a plurality of severally addressable subarrays with the subarrays being dynamically associated with various output ports as the need arises. When a received frame is to be output from two or more output ports in a multi-casting fashion, the frame is written in parallel to two of the subarrays associated respectively with the output ports. Frames are written in the subarrays in the order in which they are to be read-out and providing a certain degree of inherent queuing of the stored frames, reducing or eliminating the need for pointers to achieve the desired output order.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: The preferred embodiments described herein provide a memory device and method for selectable sub-array activation. In one preferred embodiment, a memory array is provided comprising a plurality of groups of sub-arrays and circuitry operative to simultaneously write data into and/or read data from a selected number of groups of sub-arrays. By selecting the number of groups of sub-arrays into which data is written and/or from which data is read, the write and/or read data rate is varied. Such varying can be used to prevent thermal run-away of the memory array. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: A description is given of a method and a device for outputting data via a buffer memory. In which the data, which are intended to be output first from the buffer memory are selected. The selected data are written either to a predetermined area of the buffer memory and/or to the buffer memory temporally before the rest of the data and output.

Abstract: A memory is organized into both rows and columns, and includes a write access circuit connected to the memory cells in a row-wise manner and a read access circuit connected to the memory cells in column-wise manner.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: First and second data is transferred in parallel through a first signal transmission path, amplified by first and second relay amplification circuits, and transmitted via a second signal transmission path to first and second output registers, and an output circuit is provided for serially outputting the first and second data held by the first and second output registers, respectively, on the basis of address information. With respect to data to be outputted first of the first and second data, output timing of the data to be outputted later is delayed, data to be outputted first is made to correspond to the first output register, data to be outputted later is made to correspond to the second output register, and the transfer rate of the second signal transmission path corresponding to the first output register is set higher than that of the second signal transmission path corresponding to the second output register.

Abstract: An external clock signal is transmitted as a clock signal to a memory core through a first signal transmitting path. In response to activation of the clock signal CLK, memory core starts a read operation. Read data output from memory core is latched by a latch circuit. An external signal designating a latch timing is transmitted as a latch timing signal to the latch circuit through a second signal transmitting path. A delay circuit is provided in at least one of the first and second signal transmitting paths, so that the first and second signal transmitting paths come to have the same signal delay.

Abstract: The present invention provides an integrated parallel and serial programming interface that can be selected between either a parallel programming mode or a serial programming mode. The present invention provides a control logic circuit for selecting between the parallel and serial modes. The present invention also includes a parallel and serial detection circuit. The control logic sends a signal to an interface circuit that selects between a serial programming mode and a parallel programming mode based on the outputs of the parallel and serial detection circuits.

Abstract: A programmable logic device comprising a plurality of configuration blocks that may be configured to store configuration information for configuring the programmable logic device. The configuration blocks may be simultaneously programmed.

Abstract: A memory diagnostic circuit includes: a diagnostic circuit which sets a plurality of memory banks to an access/enable state at one time, writes predetermined common data into the memory banks, and parallelly reads out storage data of the plurality of memory banks; a comparison circuit which compares the data read out from the plurality of memory banks with the data written into the memory banks; and a discrimination circuit which discriminates whether or not there is any defect in the plurality of memory banks based on a comparison result.

Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.

Abstract: An apparatus comprising a memory array having a first port and a one or more other ports and a control circuit configured to couple (i) a bitline of the first port to a corresponding bitline of the one or more other ports and (ii) a dataline of the first port to a corresponding dataline of the one or more other ports in response to the first port and the one or more other ports accessing a common address.

Abstract: A semiconductor memory circuit capable of conducting an efficient test by using a memory tester is provided. A semiconductor memory circuit includes a memory cell array; a plurality of main data lines for conducting reading and writing every plural bits in parallel; and a shift register for converting parallel data read from memory cell array to the main data lines into serial data and supplying the converted data to data input/output terminals, and for converting write data supplied from the data input/output terminals in series into parallel data and supplying the converted data to the main data lines, and at least a portion of a plurality of the main data lines are arranged so as to be across each other between the memory cell array and the shift register. As a result, data compression is enabled during a test by a memory tester.

Abstract: Data is stored into a plurality of first memory blocks, and regeneration data for regenerating this data is stored into a second memory block. In a read operation, either a first operation for reading the data directly from a first memory block selected or a second operation for regenerating the data from the data stored in unselected first memory blocks and the regeneration data stored in the second memory block is performed. This makes it possible to perform an additional read operation on a first memory block during the read operation of this first memory block. Therefore, requests for read operations from exterior can be received at intervals shorter than read cycles. That is, the semiconductor memory can be operated at higher speed, with an improvement in data read rate.

Abstract: The present invention is aimed at providing a semiconductor memory device which performs a row-address pipe-line operation in accessing different row addresses so as to achieve high-speed access. The semiconductor memory device according to the present invention includes a plurality of sense-amplifiers which store data when the data is received via bit lines from memory cells corresponding to a selected word line, a column decoder which reads parallel data of a plurality of bits from selected sense amplifiers by simultaneously selecting a plurality of column gates in response to a column address, a data-conversion unit which converts the parallel data into serial data, and a precharge-signal-generation unit which generates an internal precharge signal a first delay-time period after generation of a row-access signal for selecting the selected word line so as to reset the bit lines and said plurality of sense-amplifiers.

Abstract: The present invention concerns a circuit comprising a memory, a flag/array address circuit and a flag logic circuit. The memory may be configured to read and write data in response to one or more memory address signals. The flag/array address circuit may be configured to present one or more flag address signals in response to (i) one or more enable signals and (ii) a control signal. The flag logic circuit may be configured to present one or more logic flags in response to the one or more flag address signals.

Abstract: The semiconductor integrated circuit comprises a parallel-serial converter for converting parallel data read from memory cells into serial data and a switch control circuit for receiving a control signal and controlling the parallel-serial converter. The parallel-serial converter has a plurality of switches connected in a predetermined order. The switch control circuit controls the order of connecting the switches in accordance with the control signal so that parallel data are converted into serial data in a predetermined bit order. This minimizes delay elements formed on the transmission paths of parallel data. Specifically, for example, it eliminates the need for a conversion circuit for changing the bit order of parallel data. This results in faster data read operations from memory cells. Each of the switches in the parallel-serial converter operates in synchronization with a clock signal supplied from the exterior.

Abstract: M parallel datastreams are interleaved into a serial bitstream and shifted into a staging register, so that bit zeros of all datastreams shift in first and bit (X-1)s last. All bits of the Mth datastream occupy uniformly spaced non-adjacent memory elements interconnected with a target memory device having M memory registers each of width X. The Mth memory register of the memory device is addressed, simultaneously writing all interconnected bits to the Mth memory register within a single clock period. The bitstream is then shifted by one memory element, such that bits of the (M-1)th parallel datastream occupy the interconnected memory elements, the register address decrements, and the interconnected bits are simultaneously written to the (M-1)th register. This process iterates until M registers are written within an elapsed time of M clock periods. Reading occurs essentially in a reverse sequence.

Abstract: Two different types of memory are integrated on the same type of integrated circuit. A microcontroller is associated with each of these memories. In order that the independence of operation of these microcontrollers may be ensured, they are each provided with time delay circuits whose role is to maintain the read or write operation of one microcontroller when another is selected.

Abstract: Read buffers (RB0-RB3) are capable of holding data read out from a plurality of memory blocks (BNK0-BNK7) that are capable of parallel operation in response to a state in which the read data cannot be externally outputted from an external interface means; and, selection means (40, 41, 42) are provided for selecting data read out from one of the memory blocks, or data read out from one of the read buffers, and for feeding it to the external interface means, while the external-output-incapable state is not present. In this way, when there is a possibility that an output of read data will cause a resource competition, this read data is stored in a read buffer, and when there is no such possibility, then the read data can be externally outputted directly, thereby improving the throughput of read data output operations.

Abstract: A data input/output circuit includes an S/P data conversion circuit which converts serial data input to a data terminal into a parallel data and transmits the parallel data to write data lines, a P/S data conversion circuit which converts parallel data on read data lines to serial data and outputs the serial data to the data terminal, and an input/output test circuit placed between the write data lines and the read data lines. The input/output test circuit responds to an input/output test signal to directly transfer data on the write data lines respectively to the read data lines without passing them through a memory cell array.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: Even input bit lines, a first latch circuit group and a second latch circuit group are provided in a logical circuit. The first latch circuit group has a plurality of latch circuits which simultaneously latch a plurality of signal bits propagating the even input bit lines, respectively, in a first timing. The second latch circuit group has a plurality of latch circuits which simultaneously latch a plurality of signal bits propagating the even input bit lines, respectively, in a second timing. The output ends of a plurality of latch circuits are wired-OR to a first node, the plurality of latch circuits latching signal bits which propagate one half of the even input hit lines. The output ends of a plurality of latch circuits are wired-OR to a second node, the plurality of latch circuits latching signal bits which propagate remaining one half of the even input bit lines. The first and the second nodes, are wired-OR to a third node.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: A memory device employs multiple dual-bank RAMs to allow simultaneous write/read operations. The memory may be utilized in a high-speed block pipelined Reed-Solomon decoder for temporarily storing input codewords during pipelined processing. A memory controller enables writing to and reading from the dual-bank RAMs during each of successive frame periods such that each bank of the dual-bank RAMs is read every given number of frame periods and is written every same given number of frame periods, and such that a read bank is contained in a different one of the dual-bank RAMs than is a write bank in each of the successive frame periods.

Abstract: A circuit configuration and a method for the synchronization of signals include transmitting signals in parallel through data lines and buffer-storing the signals in a synchronizing unit. A clock signal is determined from the signals of a data line and is used for synchronizing the outputting of the signals. The signals are output in the order in which the signals were read. The signals are likewise output through a plurality of data lines, the signals being output temporally synchronously. Propagation time differences are compensated due to the buffer-storage. Moreover, the clock signal is determined from the signals themselves. Consequently, the use of an additional clock signal is not necessary.

Abstract: A semiconductor memory apparatus is provided with a memory array, a first global bit line connected to a sense amplifier, a second global bit line connected to a write amplifier, and a selection circuit for connecting a plurality of bit lines selectively to the first global bit line and the second global bit line.

Abstract: To efficiently access pixel data stored in memory in the X direction and Y direction when carrying out error correction processing. In a data output section 10, a pixel block consisting the desired 2×2 pixel data W1-W4 is selected by inputting a address, and pixel data continuously aligned in an arbitrary direction, that is, in the X direction or Y direction, are output inputting output pixel selection signals V1 and V2. Specifically, two pixels W1, W2, or W3, W4, which are continuously aligned in the X direction, are selected when signals V1 and V2=0 and V1=0 and V2=1, and two arbitrary pixels W1, W3 or W2, W4, which are continuously aligned in the Y direction, are selected when signal V1=1 and V2=0 and V1 and V2=1.

Abstract: A random access memory with a data input bus, a data output bus, a random access memory array configured to transfer data to random write addresses and from random read addresses in the random access memory array, an address bus providing the random read addresses and the random write addresses, and a first periodic signal configured to control data transfer operations (i) to the random access memory array in response to a first transition of the periodic signal and (ii) from the random access memory array in response to a second transition of the periodic signal, wherein the second transition of the periodic signal is complementary to the first transition of the periodic signal. One preferred embodiment further includes circuitry operable to write data into and read data from the random access memory array. Other preferred embodiments further include a write data register and/or a read data register. In a further embodiment, each of the data input bus and the data output bus is unidirectional.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate (i) one or more first enable signals and (ii) one or more first flag signals in response to a first clock signal and a second enable signal. The second circuit may be configured to generate a second flag signal in response to (i) the one or more first enable signals, (ii) the one or more first control signals, (iii) a second clock signal, and (iv) a pulse signal. The third circuit may be configured to generate the pulse signal in response to (i) a third clock signal and (ii) the one or more first flag signals.

Abstract: A memory circuit that allows for short retransmit recovery times by implementing a read cache memory in a FIFO device. A circuit comprising a memory array, a cache memory and a logic circuit. The memory array includes a read pointer, a write pointer and a plurality of memory rows. The cache memory is configured to store one or more memory data bits. The logic circuit is further configured to control the output of the circuit by presenting either (i) an output from the memory array or (ii) an output from the cache memory.

Abstract: Rambus Dynamic Random Access Memory (DRAM) devices may have their functional blocks arranged effectively in an integrated circuit substrate. A first memory core block an interface logic block, a pad block, an input/output and internal clock signal generation block, a data shift block and a second memory core block are sequentially arranged in one axial direction of the substrate. Accordingly, the lengths of data lines for transmitting data between a data input/output unit of the input/output and internal clock signal generation block and the data shift block may be reduced so that loads on the data lines may be reduced, thereby allowing data transmission speed to be maintained and/or power consumption to be reduced. Moreover, the data lines need not be wired between pads in the pad block, which can prevent the width of the substrate from increasing.

Abstract: For a semiconductor memory device having a global data bus, a memory array and internal data write circuitry between the bus and array. The internal data write circuitry has a data mask current that inhibits writing of data into selected memory cells in accordance with a data mask designating signal.

Abstract: The semiconductor integrated circuit comprises a parallel-serial converter for converting parallel data read from memory cells into serial data and a switch control circuit for receiving a control signal and controlling the parallel-serial converter. The parallel-serial converter has a plurality of switches connected in a predetermined order. The switch control circuit controls the order of connecting the switches in accordance with the control signal so that parallel data are converted into serial data in a predetermined bit order. This minimizes delay elements formed on the transmission paths of parallel data. Specifically, for example, it eliminates the need for a conversion circuit for changing the bit order of parallel data. This results in faster data read operations from memory cells. Each of the switches in the parallel-serial converter operates in synchronization with a clock signal supplied from the exterior.

Abstract: A semiconductor memory is provided which has a FIFO memory in which data is read in synchronization with a read clock signal. In order to read the memory, the device has a read controller which generates a read counter clock signal in synchronization with the read clock signal and a memory read access signal, and which generates a read counter reset signal which becomes active in synchronization with the read clock signal after the reset signal becomes active. The device also has a read counter which sequentially generates first read addresses whose address values are different in synchronization with the read clock signal and is reset when the read counter reset signal is active, and an AND gate group in which second read address signals are output and first read address signals from a read counter and the reset signal are input.

Abstract: The present invention implements a decrease in chip size. The device is comprised of memory cell arrays 34a and 34b, a bank selector 36, a cell select circuit 38a, a data multiplexer 40, and an input/output buffer 42. The bank selector generates a bank select signal and selects the memory cell arrays alternately. The cell select circuit selects a predetermined memory cell of the memory cell array selected by the bank select signal and performs a read operation from and a write operation to this memory cell. The data multiplexer transfers the read data from the memory cell array selected by the bank select signal to the input/output buffer.

Abstract: A semiconductor memory device having a reduced circuit area. The semiconductor memory device includes a memory cell array connected to an address decoder, a sense amplifier, a write amplifier, and a command decoder. A first serial/parallel converter is adjacent to the address decoder. A parallel/serial converter is adjacent to the sense amplifier. A second serial/parallel converter is adjacent to the write amplifier. A third serial/parallel converter is adjacent to the command decoder. The serial/parallel converters and the parallel/serial converter are each connected to an input/output circuit via a pair of wires.

Abstract: A merged semiconductor device having a DRAM and an SRAM, and a data transmitting method using the same are provided. In this device, the DRAM acts as a main memory, and the SRAM acts as a cache memory. The reading operation of the DRAM, and the writing operation of the SRAM are simultaneously controlled by a DRAM read control signal. Also, the writing operation of the DRAM, and the reading operation of the SRAM are simultaneously controlled by a DRAM write control signal. In this device, DRAM write commands and DRAM read commands can be continuously given. Writing of the SRAM starts after reading of the DRAM is completed, and writing of the DRAM starts after reading of the SRAM is completed.