Abstract: According to one embodiment, a memory system includes: a first memory cell area where a first memory cell is provided; a second memory cell area where a second memory cell is provided; an ECC circuit which corrects an error of data stored by the first memory cell; and a control circuit which replaces the first memory cell with the second memory cell if the number of times an error is successfully corrected in the first memory cell reaches a first value.

Abstract: Systems, apparatuses, and methods for implementing a hybrid memory module bridge network and buffers are disclosed. A system includes one or more host processors and multiple memory modules. Each memory module includes a relatively low pin count, high-bandwidth serial link to one or more other memory modules to perform inter-memory data transfers without consuming host-memory bandwidth. In one embodiment, a first memory module acts as a cache and a second memory module acts as the main memory for the system. The traffic between the host and the first memory module utilizes a first interface, and the cache traffic between the first and second memory modules utilizes a second interface. Cache line fill and writeback transfers between the first and second memory modules occur in parallel with timing-critical cache demand accesses from the host, in a latency-tolerant and buffered manner, without interfering with the cache demand accesses.

Abstract: A semiconductor apparatus may be provided. The semiconductor apparatus may include a base die. The semiconductor apparatus may include a plurality of core dies stacked on the base die, and each including a plurality of memory blocks. The base die or each of the core dies may include a refresh timing generation circuit configured to delay a refresh pulse, and output delayed signals as a plurality of refresh timing signals.

Abstract: In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.

Abstract: A method for managing a plurality of data blocks of a data storage device includes steps of: reading a plurality of data pages in the data blocks which having valid data; updating a plurality of access counts of the data pages in the data blocks; determining whether an access count of the data block is greater than or equal to an access count threshold, wherein the access count of the data block is selected from one of the access counts of the data pages therein; and when the determination is positive, storing data in the data block into a spare data block of the data blocks. The access count threshold is updated when an erase count of the data block is determined to be greater than or equal to an erase count threshold. A method of data management for a data storage device is also provided.

Abstract: A system includes multiple memory banks that store data. The system also includes an address path coupled to the memory banks that provides a row address to the memory banks. The system further includes a command address input circuit coupled to the address path that refreshes a first set of memory banks via the address path and, when the command address input circuit refreshes the first set of memory banks, activates a row of a second set of memory banks to store the data or read the data from the row of the second set of memory banks via the address path.

Abstract: A semiconductor memory device may include a memory core unit including a plurality of memory cells suitable for storing data, an error correction code (ECC) control unit suitable for detecting an error of the data to output a flag signal corresponding to a result of detection of the error, and an address control unit suitable for adjusting a refresh interval of at least one memory cell that stores data in which the error is detected, or repairing the memory cell among the memory cells, in response to the flag signal.

Abstract: Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor.

Abstract: A memory device may include: at least one memory bank; and a control circuit suitable for: refreshing the at least one memory bank through a first refresh operation in response to a refresh command; and refreshing the at least one memory bank through a second refresh operation when an active operation is performed between a current refresh command and a previous refresh command.

Abstract: A semiconductor memory device including a weak cell storage circuit suitable for programming therein weak cell information, and outputting the weak cell information in an initialization operation; a cell array region including a first cell region which stores the weak cell information received from the weak cell storage circuit, in the initialization operation; a refresh address generation block suitable for generating a refresh address by counting a refresh signal, and outputting a weak cell address corresponding to the weak cell information outputted from the first cell region, as the refresh address, with a predetermined cycle; and a refresh circuit suitable for performing a refresh operation for a word line corresponding to the refresh address, among a plurality of word lines.

Abstract: A diagnosis method executed by a processor includes receiving signal data at a timing of a first clock signal; setting a diagnosis period to perform a diagnosis of a memory with a predetermined period; executing a write operation and a read operation of the signal data on the memory at a timing of a second clock signal that is higher in rate than the first clock signal within the diagnosis period; executing at least one of operations included in the diagnosis of the memory using diagnosis data at a timing of the second clock signal during a period responsive to a difference between a number of first clock pulses of the first clock signal within the diagnosis period and a number of second clock pulses of the second clock signal within the diagnosis period; and diagnosing the memory by repeating the diagnosis period by a plurality of times.

Abstract: A memory system includes a core power supply node configured to provide a core power supply; backup regulator configured to provide a backup power supply; memory configured to be powered by the core power supply or the backup power supply; threshold detection circuitry configured to provide a first indicator that when asserted indicates the core power supply has fallen to a first threshold, a second indicator that when asserted indicates the core power supply has fallen to a second threshold, and a third indicator that when asserted indicates the core power supply has fallen to a third threshold. The memory system also includes power sequence detection circuitry is configured to determine, upon the core power supply falling and based on which of the first, second, and third indicators are asserted, whether the asserted indicators have been asserted in a correct sequence and provide a first test result accordingly.

Abstract: A method of determining temperature ranges and setting performance parameters in a semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. The performance parameters may be set to improve speed parameters and/or decrease current consumption over a wide range of temperature ranges.

Abstract: A data storage device is configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold. The data storage device is further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.

Abstract: An address decoder includes decoding logic configured to generate a decoding address by decoding one of a first die ID having a value according to a first operation mode, a second die ID having a value according to a second operation mode, and a bank address according to a signal having different values in the first operation mode and the second operation mode.

Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output command/address signals. The second semiconductor device may be configured to output data in a read operation during a refresh operation according to a combination of the command/address signals. The second semiconductor device may be configured to extract error information from the data. The second semiconductor device may be configured to corrects errors of the data using the error information in a write operation during the refresh operation to store the corrected data in the second semiconductor device and to store the error information in the second semiconductor device.

Abstract: A non-volatile memory system may include a plurality of memory dies and a controller that is configured to write data into the memory dies according to a multi-die interleave scheme. A total number of the dies may be a non-multiple of a die component number of the interleave scheme. The controller may select abstract address based on a virtual die layout, and translate the abstract address to actual physical addresses. The translation may identify actual blocks located in different rows of blocks. The controller may also read data sets from the memory dies. To do so, the controller may translate an abstract address to actual physical addresses, which may similarly identify actual blocks located in different rows of blocks.

Abstract: Apparatuses and methods for refreshing memory cells of semiconductor device are described. An example apparatus includes: a memory cell array including a plurality of memory groups each having a plurality of memory cells, the memory groups being selected by mutually different addresses; a first control circuit periodically executing a refresh operation on the memory groups in response to a first refresh command; and a second control circuit setting a cycle of executing the refresh operation by the first control circuit. The second control circuit sets the cycle to a first cycle until executing the refresh operation to all the memory groups after receiving the first refresh command, and the second control circuit sets the cycle to a second cycle that is longer than the first cycle after executing the refresh operation to all the memory groups.

Abstract: A memory system includes at least one memory device and a memory controller. The at least one memory device includes a refresh request circuit that generates refresh request signals at timings based on data retention times of memory cells, such as based on individual data retention times of a memory cell row. The memory controller schedules operation commands for the at least one memory device in response to the received refresh request signals.

Abstract: A base chip including first to Nth delay units coupled in series, where N is a natural number equal to or larger than 2, wherein when the number of stacked chips over the base chip is 1, the base chip is suitable for delaying a refresh signal, and generating first to Xth delayed refresh signals using the first to Xth delay units among the first to Nth delay units, where X is a natural number having a relation of N>X?1, and when the number of stacked chips over the base chip is 2, the base chip is suitable for delaying the refresh signal, and generating first to Yth delayed refresh signals using the first to Yth delay units among the first to Nth delay units, where Y is a natural number having a relation of N?Y>X.

Abstract: A memory system or flash card may include a controller that indexes a global address table (GAT) with a single data structure that addresses both large and small chunks of data. The GAT may include both large logical groups and smaller logical groups for optimizing write amplification. The addressing space may be organized with a large logical group size for sequential data. For fragmented data, the GAT may reference an additional GAT page or additional GAT chunk that has a smaller logical group size.

Abstract: A controller for controlling a dynamic random access memory (DRAM) comprising a plurality of blocks. A block is one or more units of storage in the DRAM for which the DRAM controller can selectively enable or disable refreshing. The DRAM controller includes flags each for association with a block of the blocks of the DRAM. A sanitize controller determines a block is to be sanitized and in response sets a flag associated with the block and disables refreshing the block. In response to subsequently receiving a request to read data from a location in the block, if the flag is clear, the DRAM controller reads the location and returns data read from it. If the flag is set, the DRAM controller refrains from reading the DRAM and returns a value of zero.

Abstract: A schedule for refreshing a dynamic random access memory (DRAM). Access commands for a DRAM are queued in a command queue. First-rank bank-refresh time points and second-rank bank-refresh time points are alternately provided within a refresh inspection interval for the microcontroller to alternately refresh a first rank and a second rank of the DRAM bank-by-bank based on the content contained in the command queue.

Abstract: In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.

Abstract: A solid state drive (SSD) with improved power efficiency includes one or more non-volatile memory devices configured to operate according to a programming voltage for a program function or an erase function and to a supply voltage for a read function. The SSD also includes a voltage regulator, external of the one or more non-volatile memory devices, having an output connected to the one or more non-volatile memory devices to supply the programming voltage and an input connected to receive a first voltage, the voltage regulator configured to convert the first voltage to the programming voltage. A discrete capacitor is connected to supply the first voltage to the voltage regulator. The one or more non-volatile memory devices operate according to the programming voltage supplied by the voltage regulator during both the normal operation of the SSD and in the event of a power loss or failure of the SSD.

Abstract: Apparatuses and methods of for refresh control of a semiconductor device are described. An example apparatus includes a command control circuit that provides a plurality of pulses on a first control signal in series responsive to a plurality of refresh commands issued in series; a signal generation circuit that produces a plurality of pulses on a second control signal in sequence; and a refresh control circuit that receives two or more of the plurality of pulses on the first control signal during a period of time between one pulse and a succeeding pulse of the plurality of pulses on the second control signal, disables refresh operations responsive to at least one of the two or more of the plurality of first control signal and executes a refresh operation responsive to remaining one or more pulses of the two or more of the plurality of pulses on the first control signal.

Abstract: Disclosed herein is a technique for dynamically scaling a low-power self-refresh (LPSR) idle interval associated with a solid state drive (SSD) of a user device in order to promote enhanced battery life efficiency within the user device. A determination can be made regarding whether the LPSR idle interval is to be scaled up or scaled down. Specifically, the determination is based on a total elapsed since the user device was first powered on and a total number of LPSR transitions or cycles that have been performed in association with the SSD. In turn, the dynamic scaling of the LPSR idle intervals causes NAND power-cycles to be consumed responsibly over an average system lifetime of the user device, which can result in better power management at the user device.

Abstract: A semiconductor device including a semiconductor substrate with a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug.

Abstract: A method of erasing volatile memory requiring refreshment using refresh circuitry to maintain data storage, the method comprising controlling the refresh circuitry for preventing refreshment of the memory upon occurrence of a predefined event which would require erasure of data stored in the memory by a previous user, process, application or service. A computer readable medium encoded with processor executable instructions for execution by a processing unit for controlling a refresh circuitry connected to a volatile memory for preventing refreshment of the memory at the predefined event. A refresh circuitry adapted to be connected to a volatile memory requiring refreshment using the refresh circuitry to maintain data storage, the refresh circuitry being adapted to prevent the refreshment of the memory at the occurrence of the predefined event. A volatile memory comprising a refresh circuitry adapted to prevent the refreshment of the memory at the occurrence of the predefined event.

Abstract: A semiconductor device may be provided. The semiconductor device may include a target address storage circuit and a first row address generation circuit. The target address storage circuit may be configured to count the number of times that blocks are selected by a plurality of logic level combinations of an address based on an active pulse. The target address storage circuit may be configured to store and output the address of a target block, which is selected at least a predetermined number of times, among the blocks as a target address. The first row address generation circuit may be configured to generate a first row address, which is counted, from the target address based on a first internal command.

Abstract: Provided are a memory device and a memory system performing request-based refresh, and an operating method of the memory device. The operating method includes: determining a weak row by counting an activated number of at least one row; requesting for refresh on the weak row based on a result of the determining; and performing target refresh on the weak row upon receiving a refresh command according to the requesting.

Abstract: A refresh control device may include a first oscillator configured to generate a first oscillation signal, a second oscillator configured to generate a second oscillation signal having a different cycle from the first oscillation signal, a first address controller configured to latch an address in response to the first oscillation signal, and output the latched address when a refresh signal is enabled. The refresh control device may also include a second address controller configured to latch the address in response to the second oscillation signal, and output the latched address when the refresh signal is enabled. Further included may be a selector configured to select any one of the output of the first address controller and the output of the second address controller in response to a select signal, and output the selected output as a row hammer address.

Abstract: According to one aspect, a method for adaptive error correction in a memory system includes reading data from a memory array of a non-volatile memory device in the memory system. Error correcting logic checks the data for at least one error condition stored in the memory array. Based on determining that the at least one error condition exists, a write-back indicator is asserted by the error correcting logic to request correction of the at least one error condition, where the write-back indicator is a discrete signal sent to a memory controller, and the at least one non-volatile memory device asserting the write-back indicator extends cycle timing monitored by the memory controller while the write-back indicator is asserted. Based on determining that the at least one error condition does not exist, accesses of the memory array continue without asserting the write-back indicator.

Abstract: A method includes sending a first signal from a memory device to a memory controller. The first signal indicates to the memory controller that particular memory cells of the memory device are to be refreshed by the memory device.

Abstract: Apparatus, systems, and methods to manage memory refresh operations are described. In one embodiment, an electronic device comprises a processor and memory controller logic to determine a memory refresh frequency for a memory system and transmit refresh commands to a refresh control logic in at least one memory bank coupled to the memory controller according to the memory refresh frequency. Other embodiments are also disclosed and claimed.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: A method of automatically transferring data between a client (20) and a server (32), the method including receiving a request to open a set of data at the client, determining whether the set of data exists at the client, if the set of data does not exist at the client, downloading the set of data from the server, otherwise checking for updates to the set of data on the server and downloading any new or updated files in the set of data from the server, and opening the set of data at the client.

Abstract: A data processing system includes a memory channel and a data processor coupled to the memory channel. The data processor is adapted to access at least one rank and has refresh logic. In response to an activation of the refresh logic, the data processor generates refresh cycles to a bank of the memory channel. The data processor selects one of a first state corresponding to a first auto-refresh command that causes the data processor to auto-refresh the bank, and a second state corresponding to a second auto-refresh command that causes the data processor to auto-refresh a selected subset of the bank. The data processor initiates a switch between the first state and the second state in response to the refresh logic detecting a first condition related to the bank, and between the second state and the first state in response to the refresh logic circuit detecting a second condition.

Abstract: A memory device includes a memory bank, a row selection circuit and a refresh controller. The memory bank includes a plurality of memory blocks, and each memory block includes a plurality of memory cells arranged in rows and columns. The row selection circuit performs an access operation with respect to the memory bank and a hammer refresh operation with respect to a row that is physically adjacent to a row that is accessed intensively. The refresh controller controls the row selection circuit such that the hammer refresh operation is performed during a row active time for the access operation. The hammer refresh operation may be performed efficiently and performance of the memory device may be enhanced by performing the hammer refresh operation during the row active time for the access operation.

Abstract: A memory system includes: a memory device suitable for performing a refresh operation in response to a refresh command, and for providing a refresh end signal where the refresh end signal is enabled before the refresh operation is completed; and a memory controller suitable for transferring the refresh command to the memory device and receiving the refresh end signal.

Abstract: A storage device, such as a NAND flash device, avoids the need for garbage collection. An application executing on a host system tracks data objects that are marked as invalid and maintains an association between data objects and logical blocks, each logical block corresponding to a physical block of memory in the NAND flash device. Upon determining that the logical block contains no valid objects, the application instructs an SSD to trim the physical block of memory corresponding to the logical block. The application also aggregates write commands until a full block of data is ready to be written, at which point the application transmits a write command to the SSD.

Abstract: Methods and apparatus relating to reducing pin count requirements for implementation of interconnect idle state(s) are described. In one embodiment, logic receives a general purpose input signal on a signal pin of an Input/Output (I/O) complex logic in response to a control signal. An I/O device (e.g., coupled to the I/O complex logic) enters a low power consumption state in response to the control signal. The logic receives a wake signal on the signal pin of the I/O complex logic and the I/O device exits the low power consumption state in response to the wake signal. Other embodiments are also claimed and disclosed.

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

Abstract: A memory device may include: an active controller configured to output a row active signal in response to a refresh control signal and a row enable signal when an active signal is activated; a refresh controller configured to generate and store a flag bit for controlling a refresh operation in response to a refresh signal, a precharge signal, and a precharge stop signal, and output the row enable signal corresponding to the stored flag bit to the active controller; and a cell array circuit configured to perform a refresh operation in memory cell array areas in response to the row active signal.

Abstract: A memory controller is configured to communicate to a DRAM an indication of when a most-recent memory-controller-triggered refresh cycle occurred prior to a transition to a self-refresh mode of operation in which the DRAM self-triggers its refresh cycles.

Abstract: An electronic apparatus comprising a unified non-volatile memory and a control unit is disclosed. The unified non-volatile memory comprises a first memory section, served as a read only memory; and a second memory section, served as a random access memory. The control unit controls the unified non-volatile memory. The first memory section further comprises: a first area for the first memory section; and a second area for the first memory section. The control unit adjusts a refresh rate of the second memory section according to a number of access times of the second memory section.

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

Abstract: A memory system includes a memory in which stored data is periodically rewritten by a refresh command, and a memory controller. The memory has an input/output (“I/O”) terminal, and the memory controller is communicatively coupled by a channel to the I/O terminal. The memory transmits a plurality of commands over the channel to the memory. The memory controller estimates a first total energy consumed based on the plurality of commands during a first sampling period, determines a temperature of the memory based on the first total energy consumed in the first sampling period, determines a first refresh cycle rate corresponding to the first temperature of the memory and transmits a refresh command to the memory based on the first refresh cycle rate.

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

Abstract: A semiconductor memory device includes a memory cell array, a repair control circuit and a refresh control circuit. The memory cell array includes a plurality of memory cells and a plurality of redundancy memory cells. The repair control circuit receives a repair command and performs a repair operation on a first defective memory cell among the plurality of memory cells during a repair mode. The semiconductor memory device may operate in a repair mode in response to the repair command. The refresh control circuit performs a refresh operation on non-defective ones of the plurality of memory cells during the repair mode.