Abstract: A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 ?m.

Abstract: A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.

Abstract: A transmitter array that has at least one pixel element. Each pixel element includes at least a primary semiconductor laser and a secondary semiconductor laser. In this manner, when the primary semiconductor laser is inoperative, the secondary semiconductor laser is utilized for transmission.

Abstract: Embodiments of the present invention are directed to staggered arrays of laser diode bars positioned on stepped support structures. Optical waveguides may direct the outputs of the individual diode bars to a desired location, for example, a common output plane. The optical waveguides may be glass plates in certain embodiments. Waste heat generated by the diode bars may be removed from the support structures at certain locations and as a result, the diode bars may be closely positioned with respect to each other. By closely positioning the laser diode bars and directing the diode bar outputs to a desired orientation, the effective brightness and fluence may be increased for a given output area and operational power compared to the prior art. Associated methods of manufacturing staggered array couplers and producing high-power pump energy are also described.

Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.

Abstract: An optical transmitter includes an external cavity laser array formed in a PLC, a trench-based detector array and an AWG. The external cavity laser is formed using an array of substantially similar laser gain blocks and an array of gratings formed in waveguides connected to the gain blocks. Each grating defines the output wavelength for its corresponding external cavity laser. Each detector of the detector array includes a coupler to cause a portion of a corresponding laser output signal of the laser array to propagate through a first sidewall of a trench and reflect off a second sidewall of the trench to a photodetector. In one embodiment, the photodetector outputs a signal indicative of the power level of the reflected signal, which a controller uses to control the laser array to equalize the power of the laser output signals.

Abstract: A unit has an array of lasers having an emission surface through which beams can be emitted in a substantially vertical direction so as to define an emission side, drive electronics connected to a side opposite to the emission side of the array of lasers, and an array of modulators, located on the emission side of the array of lasers and connected to the drive electronics.

Abstract: An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

Abstract: A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.

Abstract: An apparatus for shaping the output beam of a strip of lasers, or an array of such strips, comprising a first reflective member including at least a first reflective element for deflecting a first portion of the output beam in a first direction oriented at a first angle in the slow axis direction and at a second angle in the fast axis direction, and at least a second reflective member including at least a first reflective element for deflecting the first output beam portion from the first direction to a second direction in the Z axis. The output beam is thus shaped to define at least two beams comprising at least the first portion and a remainder of the output beam which is propagated along the Z axis without deflection by any reflective member, with the first portion of the output beam being oriented approximately parallel to the un-deflected remainder.

Abstract: A laser beam is obtained from a semiconductor laser by a stable emission light amount. A first semiconductor laser is thermally coupled with a second semiconductor laser and driven by a feedback circuit constructed by a photodetector, an I-V converter, and a current generator so as to stabilize the emission light amount. A current I0? having a correlation with a drive current I0 of the 1st laser is outputted from a current mirror circuit. A modulation signal is supplied to a current pull-in type current driving circuit via a multiplier and a linearity compensating circuit and a current I2 according to the modulation signal is extracted from a collector of a transistor. The 2nd laser is driven by a current I1 (I0??I2) and a laser beam modulated by the modulation signal is generated. Since the signal modulation by the 2nd laser is performed without influencing on I0 and the 2nd laser is driven by I0?, the emission light amount is stabilized.

Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.