Abstract: A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Abstract: A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer.

Abstract: A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.

Abstract: A laser apparatus having multiple laser devices coupled together. The laser devices include optical fibers with laser active regions. Each of the fibers has a reflector disposed at one end and is connected to a combiner on the other end. A laser pump device for each fiber provides pump energy to the laser active regions. Light propagating in the fibers interacts so as to form inphase states. The array of fibers may be coupled either in pairs or altogether between the reflector and the laser active region.

Abstract: A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array.

Abstract: Arrayed DBR (Distributed Bragg Reflector) laser shows a problem that spectrum purity is deteriorated when a current is flowed in a semiconductor optical amplifier for attaining a sufficient optical output. In addition, the arrayed waveguide grating laser shows a problem that the spectrum purity is deteriorated by leakage of light. An output end of each of the laser channels is provided with a gate (a core) that can be controlled through bias application. The gate has a function for amplifying light when the laser channels are operated and for absorbing light when the laser channels are not operated.

Abstract: An optical micro-array reader system includes microchip, VCSEL, microlens and detector arrays. The microchip array includes multiple sample spots to be separately analyzed. The VCSEL array is disposed to simultaneously illuminate more than one of the multiple spots. The microlens array focuses fluorescences or other optical emissions from the sample spots onto the detector array.

Abstract: An irradiating apparatus for irradiating an irradiation object with beam light emitted from a semiconductor laser, wherein letting w be a radius of a beam for irradiating the irradiation object, ? be a rate of individual difference in angle of divergence of the semiconductor laser, and ? be beam wavelength of the semiconductor laser, a focal position of an irradiating optical system interposed between the semiconductor laser and the irradiation object is defocused such that a distance z between the focal position and the irradiation object is z = ? · w 2 ? · 1 - ? 2 ( 1 - ? 2 ) 2 + 1 [ Equation ? ? 1 ]

Abstract: According to an aspect of the present invention, there is provided a semiconductor laser apparatus including: a laser device including: a semiconductor substrate, first and second resonators formed on the semiconductor substrate, and first and second electrodes that are respectively connected with the first and the second resonators and extend away from each other; and a submount including: third and fourth electrodes respectively adhered with the first and the second electrodes; wherein each of the first and the second electrodes includes: an energizing portion covering the corresponding resonator, an adhering portion being disposed separately from the energizing portion and having a height larger than that of the energizing portion, and a stress-absorbing portion formed in the adhering portion.

Abstract: Methods and apparatus for implementing thermal printing techniques onto thermally sensitive print media use one or more laser arrays to provide optical heating. Thermal management of the laser arrays is described. Techniques for alignment of multiple monolithic arrays onto a common carrier are described. Various output optics are described.

Abstract: A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.

Abstract: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle ?, which is equal to or less than the complementary angle ?c of the total reflection critical angle on the side face of the refractive index type waveguide.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: A single piece optic for coupling the output of a diode laser array into an optical fiber array is provided. The coupling optic has a planar back surface which, during use with a diode laser array, is positioned substantially parallel to the front face of the laser array. The coupling optic is fabricated from a single substrate and is comprised of a plurality of optical elements. Depending upon the technique used to fabricate the optical elements, the individual optical elements may be trapezoidally-shaped or rectangularly-shaped. The front surface of each optical element is tilted, thus preventing reflected laser radiation from resonating within the diode laser's emitters. Preferably the wedge angle for the tilted front surface is greater than 2 mrad, thus accomplishing the goal of limiting feedback into the emitters, and less than 4 mrad, thus reducing beam steering.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: A surface emitting laser includes the plurality of surface emitting lasers including a first surface emitting laser, a second surface emitting laser adjacent to the first surface emitting laser, and a third surface emitting laser adjacent to the second surface emitting laser. Each of the plurality of surface emitting lasers is operated by an independent signal with respect to one another and includes a first mirror, an active layer, a second mirror, and a columnar portion composed of at least the first mirror and the active layer. A diameter of the columnar portion of the second surface emitting laser is smaller than a diameter of the columnar portion of the first surface emitting laser, and larger than a diameter of the columnar portion of the third surface emitting laser.

Abstract: A laser array chip includes: a plurality of emission sections emitting laser lights; and a weak section formed in a portion in the thickness direction of at least a portion of the areas between the emission sections, whose strength is weaker than the strength of areas in which the emission sections are formed.

Abstract: The present invention relates to a wavelength-tunable light source whose output wavelength can be externally controlled and a wavelength-division multiplexed transmission system using the source. A wavelength-tunable light source in accordance with the present invention is constituted to be able to vary the output wavelength of a Fabry-Perot laser diode, that is wavelength-locked to an injected light, by controlling the wavelength of the injected light. A wavelength-tunable light source in accordance with the present invention provides comparatively large output power and excellent economic features. The present invention also presents a wavelength-division multiplexed transmission system using, the wavelength-tunable light source.

Abstract: The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens 5 that collimates laser beams L1 outputted from the respective rear end faces 2b of the active layers 2 within a plane orthogonal to the slow axis, and a reflecting mirror 9 that feeds back parts of the laser beams L2 outputted from the collimating lens 5 to the respective active layers 2 via the collimating lens 5.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.

Abstract: In a laser array device, each laser of a transmitting unit 30 and each optical detector of a receiving unit 20 are arranged to be adjacent to each other. A plurality of unit modules 40 are formed so that each unit module 40 contains adjoining laser 30-1 and optical detector 20-1, and a laser control circuit 10-1. In each unit module, a part of laser beam outputted from the laser is reflected and outputted to the optical detector, an intensity of the laser beam outputted from the laser is detected based on a detection signal outputted from the optical detector, and when the detected laser-beam intensity exceeds a predetermined reference level, the output of the laser beam of the laser is stopped.

Abstract: A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.

Abstract: Systems and methods for high brightness, improved phase characteristics laser diodes.

Abstract: A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser beams being simultaneously emitted from the multiple light-emitting portions. At least one of the multiple light-emitting portions has a near field pattern different from those of other light-emitting portions.

Abstract: Disclosed are a method and wireless device for selecting a content file using speech recognition. The method includes establishing a set of tagged text items wherein each tagged text item is uniquely associated with one content file of the set of content files. At least one audible utterance (226) is received (804) from a user. A phoneme lattice (302) is generated (808) based on the audible utterance (226). A phoneme lattice statistical model is generated (810) based on the phoneme lattice (302). A score is assigned (1008) to the tagged text items based on probabilistic estimates in the phoneme lattice statistical model. A list of high scoring tagged text items is presented (1014) so that a selection of a content file may be made.

Abstract: A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer and which has the same constituent elements as those of the first p-type cladding layer, and a p-type ridge waveguide in a stripe mesa-like shape on the signal layer, which has the same constituent elements as those of the signal layer, and in which composition ratios of two constituent elements in a complementary relation of constituent elements are different from those composition ratios of the signal layer.

Abstract: An apparatus and method for optically aligning output beams from multiple, individual, different-wavelength laser diodes. The output of a first laser diode is fed directly into the high-reflector of a laser diode, through the gain medium, and is output from an output coupler in each of a sequence of abutting laser diodes. The output from the last laser diode includes the individual beams from each laser diode in the same single optical axis, while retaining the original wavelengths.

Abstract: A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

Abstract: Laser modules using two-dimensional laser diode arrays are combined to provide an intense laser beam. The laser diodes in a two-dimensional array are formed into rows and columns, and an optical assembly images light generated by laser diodes in a column into an optical fiber. The laser light outputs of the laser modules are combined by a spectral combiner into an optical fiber to form an intense laser beam.

Abstract: A laser source device provided with a light source, a wavelength conversion element, an external resonator, and an optical path conversion element. The wavelength conversion element is disposed inside the resonance structure, the second laser beam is taken out on the second optical path by the optical path conversion element and is led to a direction substantially the same as the proceeding direction of the first laser beam, and is used with the first laser beam as the output light beam. The selectively reflective film and the reflective surface for taking out the second laser beam are integrated.

Abstract: (Problem to be solved) To provide a laser beam synthesizing apparatus which is small in size and high in output power. (Means for solving the problem) A convergent angle transforming optical system 30 is disposed further upstream of the upstream-most position Pa in the positions where the optical axes of beam bundles La, Lb, Lc . . . which are radiated from a plurality of semiconductor lasers 11A, 11B, 112C . . . and converged in the fast axis view by a converging/dispersion lens 120 intersect each other in the fast axis view, and the whole beam bundle made up of the beam bundles La, Lb, Lc . . . passed through the converging/dispersion lens 120 is converged in the fast axis view by the convergent angle transforming optical system 30 so that the angle of convergence of the whole beam bundle is made smaller in the fast axis view, and introduced into the core 41 of an optical fiber 40.

Abstract: An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.

Abstract: A longitudinal diode-laser array includes a plurality of diode-laser emitter groups. The emitter groups are mounted on corresponding electrical contacts electrically isolated from each other on a dielectric carrier. The emitter groups are cut from a conventionally formed diode-laser bar bonded to the carrier. The emitter-groups are connected together in electrical series via the electrically isolated electrical contacts. This provides that the diode-laser array can be operated at a lower current than would be required to operate the conventional diode-laser bar wherein the plurality of emitters must be connected in parallel.

Abstract: An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array.

Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Abstract: An illuminating device includes a plurality of light sources, a light guide plate that has plate surfaces on front and rear sides and a plurality of end faces formed around the plate surfaces, receives light emitted from the plurality of light sources through a light incident surface, which is at least one end face among the plurality of end faces, and emits the light through a light-emitting surface, which is one of the plate surfaces, a plurality of photodetectors that are disposed to face the end faces or the plate surfaces of the light guide plate, and a light source control unit that controls light emission of the plurality of light sources on the basis of the output of the plurality of photodetectors. The plurality of photodetectors include at least two photodetectors including light receiving surfaces that face the end faces or the plate surfaces in different directions from each other.

Abstract: A two-dimensional surface emitting laser array having two sub-scanning pitches is provided. A multi-beam scanning unit employs the two-dimensional surface emitting laser array, and an image forming apparatus employs the multi-beam scanning unit. The two-dimensional surface emitting laser array includes n x m surface emitting lasers including n surface emitting lasers arranged with substantially equal spacing a on base lines N, and m surface emitting lasers arranged with substantially equal spacing b on n inclined lines M that are inclined at an angle ? with respect to the base lines N and pass through the respective n surface emitting lasers.

Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.

Abstract: An optical system includes semiconductor lasers arranged in the direction of the slow axis of the laser beam, an optical means which makes parallel the collimated laser beams, an optical member which is provided with inlet and outlet faces which are positioned in perpendicular to the optical axis of laser beams and total reflection surfaces which are opposed to each other at a space where the component in the direction of the slow axis of the laser beam entering from the light inlet face repeats internal reflection, and emits from the light outlet face a slow axis uniform laser beam, and an imaging optical means which images the slow axis uniform laser beam on a surface as a linear line beam extending in the direction of the slow axis.

Abstract: A tuneable laser assembly includes a substrate having formed thereon a plurality of tuneable lasers, waveguides, an optical coupler and an optical amplifier. The lasers have active sections and distributed Bragg reflector (DBR) tuning sections and are characterised by respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The DBR tuning sections have a length in the range of about 150-200 um, are of the same optical waveguide of the waveguides, a grating strength (KL) less than about 0,5 and a high reflective (HR) coated back facet enhancing the external quantum efficiency from each said tuning sections. The active sections have a length in the range of about 250-300 um comprised of a high-gain/low-loss multi quantum well (MQW) material. The lasers have a total DBR array length of about 500 um.

Abstract: A manufacturing method, in which two device bars are bonded prior to facet coating to form a stacked bar pair. In one embodiment, each of the device bars has a p-side and an n-side, each side having a plurality of bonding pads, with at least some bonding pads located at the p-side of the first device bar adapted for mating with the corresponding bonding pads located at the p-side of the second device bar. Solder material deposited onto the p-side bonding pads adapted for mating is liquefied in a reflow oven, wherein surface tension of the liquefied solder self-aligns the device bars with respect to each other and keeps them in alignment until the solder is solidified to form a solder bond between the mated bonding pads. Two or more instances of the bonded bar pair are further stacked such that bonding pads located at the n-sides of adjacent bar pairs are mated in a relatively tight fit.

Abstract: A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.

Abstract: A symmetrization device and laser diode system using such a device is shown. The device has adjacent lens components transforming beamlets from a laser diode array. Each lens component has input and output surfaces, each having a profile in the propagation direction of the beamlets and a contour perpendicularly thereto. The profiles of the input and output surfaces and distances therebetween are selected to permute the divergence along the slow and fast axes of the beamlets. The contour of each surface matches the cross-sectional shape of the beamlets thereat.

Abstract: A system and a method for providing more gain while minimizing the potential for parasitic oscillation and amplified spontaneous emissions in an optically pumped optical amplifier or laser system, utilizing a partitioned monolithic gain element. The monolithic gain element being partitioned into discontinuous amplifying gain regions such that parasitic modes and amplified spontaneous emissions are substantially obviated.

Abstract: A solid-state laser rod pumping module has a stack-type semiconductor laser including a plurality of bar-shaped components that are stacked in a direction parallel to the axis of a solid-state laser rod. Each bar-shaped component includes a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The large divergence angle of the stack-type semiconductor can be compensated by including a light focusing component for focusing laser light emitted out of the stack-type semiconductor laser. The focused light is guided by a laser light guiding component disposed in a diffusive reflection tube. A light guiding component guides the focused light onto a solid-state laser rod located within the diffusive reflective tube, while maintaining the length of one side of the cross section of the guided light.

Abstract: A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.