Abstract: Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Abstract: The present invention is an organoruthenium compound for a chemical vapor deposition raw material, including dodecacarbonyl triruthenium represented by the following chemical formula, wherein the iron (Fe) concentration is 1 ppm or less. The DCR in the present invention can be produced by obtaining crude DCR by directly carbonylating ruthenium through allowing a ruthenium salt and carbon monoxide to react with each other and by purifying the crude DCR by a sublimation method. In the synthesis step, the concentration of Fe in the obtained crude DCR is preferably set at 10 ppm or less.

Abstract: An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1.

Abstract: Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I): wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.

Abstract: The present invention is an organoplatinum compound for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition, wherein the organoplatinum compound is represented by the following formula, and includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, R1 and R2 are each an alkyl group, and may be different from each other. R3 and R4 are each a hydrogen atom or an alkyl group, and may be different from each other. The organoplatinum compound is satisfactory in stability and generates no toxic substance in film formation, and hence is satisfactory in handleability and excellent in practicability. The organoplatinum compound has a high vapor pressure, enables the film formation at a low temperature, and is useful as a CVD raw material easily forming a film on a spatial structure.

Abstract: A method for forming a metal comprises contacting a compound having formula 1 with a compound having formula 2 with an amine borane: wherein: M is Cu, Ni, Co, and Mn; R1R2, R3 are each independently C1-C6 alkyl; and R4-R6 are each independently hydrogen or C1-C6 alkyl. A method for making a metal film by an atomic layer deposition process using a compound having formula (1) is also provided.

Abstract: The invention relates to platinum complexes, to a method for preparing the same and to the use thereof for the chemical vapor deposition of metal platinum. The chemical vapor deposition of platinum onto a substrate is made from a platinum organo-metal compound the includes a ligand with a cyclic structure including at least two non-adjacent C?C double bonds, and the platinum organo-metal compound has a square-lane structure in which the platinum is bonded to each of the C?C double bonds of the ligand, thereby forming a (C?C)—Pt—(C?C) of 60° to 70°.

Abstract: The present invention provides a method of preparing metal or metal oxide particles on a substrate by forming a reaction mixture of a metal or metal oxide precursor and a substrate, and heating the reaction mixture at reduced pressure, such that metal or metal oxide particles are formed on the substrate.

Abstract: Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

Abstract: The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.

Abstract: Disclosed are modified Atomic Layer Deposition processes used to deposit metal films on a substrate.

Abstract: Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

Abstract: The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A process for forming a coated substrate comprises providing a nickel base alloy substrate, depositing a chromium coating onto the nickel base alloy substrate and diffusing chromium from said coating into the substrate, applying a MCrAlY coating onto the nickel base alloy substrate and heat treating the substrate with the deposited chromium and the MCrAlY coating so that chromium diffuses into an outer region of the substrate. Further, in accordance with the present invention, a strip process for removing a coating from a substrate broadly comprises the steps of providing a nickel base alloy substrate having chromium diffused into an outer region and a MCrAlY coating deposited over the substrate with the diffused chromium and removing the MCrAlY coating by immersing the nickel base alloy substrate in an acid solution containing a sulfuric acid-hydrochloric acid mixture in water.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N?-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: A metal article such as a gas turbine component may include a super-diffusion coating with unusually high content of the desired constituent. The coating may be provided by combining two or more diffusion coating processes, each process interdiffusing the desired constituent with the metal article from a different metal source. The metal article can be placed in physical contact with a metal source in powder form as a first source, and the article can also be exposed an additional metal vapor source. Super-chromide coatings can be produced with alpha-chrome content in a manner that also provides the coating with sufficient ductility for long-term durability. For example, a shank portion of a gas turbine blade may be provided with a chromide coating with at least a portion of the coating having from 60-90% chromium content.

Abstract: A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen-free solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings.

Abstract: Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber.

Abstract: The invention concerns the use of the ruthenium containing precursor having the formula (Rn-chd)Ru(CO)3, wherein: (Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand; n is an integer comprised between 1 and 8 (1?n?8) and represents the number of substituents on the chd ligand; R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate.

Abstract: Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices.

Abstract: A noble metal layer is formed using ozone (O3) as a reaction gas.

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract: A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ.

Abstract: A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.

Abstract: A cathode for electrolytic processes, particularly suitable for hydrogen evolution in chlor-alkali electrolysis comprises a metal substrate provided with a catalytic coating made of two layers containing palladium, rare earths (such as praseodymium) and a noble component selected between platinum and ruthenium. The rare earth percent amount by weight is lower in the outer layer than in the inner layer.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

Abstract: A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate.

Abstract: Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.

Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.

Abstract: An aluminization process by vapor phase deposition for high-temperature oxidation protection of a metal turbomachine part. The part including a cavity into which a metal component is introduced and assembled from an opening in the part. A halide is formed by reaction between a halogen and a metal donor containing aluminum, then the halide is transported by a carrier gas in order to come into contact with the metal part, wherein the metal component has first, before the implementation of the process, been surface-enriched with aluminum in order to serve as an aluminum donor.

Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

Abstract: In an alloy coating film having a diffusion barrier layer and an aluminum reservoir layer on a substrate, the diffusion barrier layer is composed of a single phase that is a Re—Cr—Ni—Al system ? phase containing Al by less than 1 atomic %, or composed of a first phase which is the Re—Cr—Ni—Al system ? phase and one or more second phases selected from a ? phase, ?? phase and ? phase.

Abstract: In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.

Abstract: In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate.

Abstract: Disclosed is a multilayer alloy coating film capable of maintaining heat resistance, high-temperature oxidation resistance and creep resistance for a long time even in an ultra high temperature environment. The multilayer alloy coating film comprises a barrier layer formed on a base surface, and an aluminum reservoir layer formed on the barrier layer and composed of an alloy containing Al. The barrier layer comprises an inner sacrificial barrier layer composed of an alloy containing Re, an inner stabilization layer formed on the inner sacrificial barrier layer, a diffusion barrier layer formed on the inner stabilization layer and composed of an alloy containing Re, an outer stabilization layer formed on the diffusion barrier layer, and an outer sacrificial barrier layer formed on the outer stabilization layer and composed of an alloy containing Re.

Abstract: A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a reactive surface-active composition to form a treated first layer having a second surface energy which is lower than the first surface energy; exposing the treated first layer with radiation; and forming the second layer. There is also provided an organic electronic device made by the process.

Abstract: In a method for forming a Cu film, a wafer (W) is loaded into a chamber 1. Then, Cu(hfac)TMVS as a monovalent Cu ?-diketone complex and a reducing agent for reducing Cu(hfac)TMVS are introduced into the chamber 1 in a vapor state. Thus, a Cu film is formed on the wafer (W) by CVD.

Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

Abstract: An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1.

Abstract: The invention relates to platinum complexes, to a method for preparing the same and to the use thereof for the chemical vapour deposition of metal platinum. The chemical vapour deposition of platinum onto a substrate is made from a platinum organometallic compound that includes a ligand with a cyclic structure including at least two non-adjacent C?C double bonds, and the platinum organometallic compound has a square-plane structure in which the platinum is bonded to each of the C?C double bonds of the ligand, thereby forming a (C?C)—Pt—(C?C) of 60° to 70°.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [H2AlNR1R2]n wherein R1 and R2 are the same or different alkyl groups having 1 to 3 carbons, and n is an integer of 2 or 3. The aluminum films may be thick or thin and may be aluminum films or may be mixed metal films with aluminum metal. Both CVD and ALD methods may be employed.

Abstract: Systems and methods for providing localized heat treatment of metal components are provided. In this regard, a representative method includes: identifying a portion of a metal component to which localized heat treatment is to be performed; shielding an area in a vicinity of the portion of the metal component; and directing electromagnetic energy in the infrared (IR) spectrum toward the portion of the metal component such that the portion is heated to a desired temperature and such that the area in the vicinity of the portion that is subjected to shielding does not heat to the temperature desired for the heat treatment.

Abstract: A surface treating method for making a housing having a main body includes forming a plating layer on the main body, coating an adhesive on the plating layer to form an adhesive layer, and coating a lacquer on the adhesive layer to form an outer layer. The adhesive comprises polyolefin chloride.

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract: The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The technique increases the chemical reactivity of a precursor used in the process.