Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, is held on a wafer holder in a reaction chamber under reduced pressure, WF.sub.6 gas is introduced into the reaction chamber so that a first metallic film of W is formed on the substrate in the via hole. The additional WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film. The temperature difference is created because of the differences of the absorption ratios of infrared components of the light between the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.

Abstract: Very good masking of pack diffusion aluminizing on any metal to keep portions from being diffusion coated, is effected by localized coating layers the lowest of which is inert or depletion-reducing masking powder that can have same composition as substrates, mixed with non-contaminating film-former such as acrylic resin. The upper coating layer or layers can be of non-contaminating particles like nickel or Cr.sub.2 O.sub.3 that upon aluminizing or chromizing become coherently held together to form a secure sheath. Such sheath can also be used for holding localized diffusion-coating layer in place. Film-former can be dissolved in volatile solvent, preferably methyl chloroform, in which masking powder or sheath-forming powder is suspended. Chromizing can be performed before aluminizing for greater effects.

Abstract: A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A novel hyperfiltration membrane and process for making the same is described. The membrane is useful for processing copper electroless solutions to concentrate for re-use salts of chelating agents. The membrane can be prepared by crosslinking a water-compatible polymer in the presence of a phosphorus-containing acid, such as phosphoric acid, wherein the acid is present in a sufficient amount to catalyze crosslinking and to form a plurality of pores in the coating when dried.

Abstract: Methods are described for forming an yttrium enriched aluminide coating on the surface of a nickel or cobalt base superalloy article. In one preferred embodiment, a pack mixture for forming the coating consists essentially of, by weight percent, 5-35 of an Al-Y-Si alloy, 1-20 CoI.sub.2, balance Y.sub.2 O.sub.3.

Abstract: A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.

Abstract: Diffusion aluminizing with chromium or silver chloride, bromide or iodide that is not significantly soluble in or reactive with water. Hydrogen can be excluded from diffusion aluminizing atmosphere when aluminizing maraging steels or other substrates sensitive to hydrogen. Aluminized iron powders can be boronized to increase their exothermic heat upon exposure to air after leaching out aluminum.

Abstract: A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface.

Abstract: A method of a chemical vapor deposition wherein a first reactive gas containing a metal element and a second reactive gas containing metal element are fed into a reaction chamber in which at least one substrate is disposed under reduced pressure and said substrate is irradiated by a light beam, so that the growth rate of a thin film containing the metal element which to be formed on the surface of the substrate can be increased with the consumption of the reactive gas containing the metal element which is less than that of the conventional methods. The flows of the reactive gases can be maintained in a laminar flow state with good controllability in the entire area of the vicinity of the substrate.

Abstract: Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240.degree.-400.degree. C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: A method is described for depositing thick, low-stress refractory metal films on a substrate. For example, a layer of tungsten of any required thickness may be deposited by the silicon reduction of tungsten hexafluoride in a CVD reactor. This is accomplished by alternating the process step of plasma depositing an amorphous silicon film, with the process step of exposing the silicon film to tungsten hexafluoride until the required thickness of tungsten is reached. The thickness of the deposited amorphous silicon film must be less than the thickness at which the replacement of silicon to tungsten becomes self-limiting to assure that all of the amorphous silicon is replaced. The bombardment of the silicon during plasma deposition "hammers" the underlying tungsten film and relieves the stress in the film.

Abstract: A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.

Abstract: In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

Abstract: A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

Abstract: A silicon nitride coating is deposited on the inside surface of a crucible by pyrolysis. Reactive gases are fed through a tube into the crucible. The crucible is rotated during deposition and the crucible walls are maintained at a temperature of at least about 1250.degree. C.

Abstract: An improved deposition method for conductive layer is shown. Adverse effects of conductive deposited material on a wall of a reaction chamber is overcome by provision of a multi-chambered system. One chamber is devoted to a resonance space in which process gas is excited by ECR. Another chamber is devoted to a reaction space in which productive gas is decomposed to proceed the deposition.

Abstract: Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Abstract: A method is described for depositing gold onto a target surface using volatile organogold(I) and organogold(III) complexes. The method requires the vaporization of the organogold complex under high vacuum and moderate temperature and introduction of the vaporized complex into contact with the target surface heated to a temperature at or above the decomposition temperature for the complex, so that the complex decomposes upon contacting the surface thereby depositing gold thereon. A number of new organogold complexes are described for use in the method.

Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Abstract: The invention relates to an method of producing a titanium aluminide coating on a substrate by producing a flow of hydrogen and gaseous aluminum monochloride over a titanium surface to react to form a gaseous flow of titanium trichloride and aluminum monochloride and contacting the substrate with the flow of titanium trichloride and aluminum monochloride at a temperature of 800.degree. to 1200.degree. C., said substrate being a temperature below the temperature of the gases.

Abstract: A method and an apparatus are disclosed which are suitable for applying uniform coatings to integrated circuit (IC) wafers by means of chemical vapor deposition in a process suitable for use in mass production of IC wafers. The process introduces a first group of reactant gases into the vicinity of the wafers through at least one inlet. The number of inlets and the positions of inlets are selected to reduce the total variation in thickness produced on a batch of wafers to within preselected values of variations. The choices of pressure and temperature as well as the choice of gases in the first group are selected to optimize uniformity.

Abstract: A process for producing a two element deposition coating on metals e.g. for oxidation/corrosion protection of superalloys, comprises halide transfer of the two elements in sequence from a reaction charge, the reaction charge including a significant excess of halide activator over the amount required for stoichiometric considerations. The transportation of the first element is terminated by reacting its source to exhaustion, in the course of the transport reaction or by evacuating from the reaction vessel. Preferred elements are aluminum with silicon and aluminum with chromium.

Abstract: A method of making a field emitter includes anisotropically etching a single crystal silicon substrate to form at least one funnel-shaped protrusion on the substrate, then conformally depositing a refractory metal onto the funnel-shaped protrusion. Alternatively, single crystal silicon may be anisotropically etched to form at least one funnel-shaped recess in the silicon. The etched surface is doped with an impurity to form an etch-stop layer, the remaining undoped silicon is removed, then the etch-stop layer is conformally deposited with a refractory metal. The funnel-shaped recess can then be back-filled with silicon or another suitable material.

Abstract: Metal refractory anchors impregnated with special corrosion resistant material are provided to minimize erosion and corrosion as well as to increase the useful life of refractory linings in reactors, transfer lines, regenerators, and other vessels. In one embodiment, the refractory anchor has an S-shaped crossbar with reverse bent opposite ends. In another embodiment, the refractory anchor has a C-shaped crossbar with symmetrical arcuate ends.

Abstract: Packless cementation is used to diffusion bond nickel to discrete exposed areas of tungsten or molybdenum that are in turn bonded to the surface of a ceramic body, e.g. in the preparation of a ceramic chip carrier or other premetallized ceramic device.

Abstract: In the reactive deposition from a gaseous phase containing tungsten hexafluoride and hydrogen on a substrate at an overall pressure of 10 to 100 hPa (low-pressure CVD method) an inert carrier gas is enriched with a rare earth metal acetyl acetonate hydrate and is conducted across the substrate and the growing tungsten layer together with the reactive gases tungsten hexafluoride and hydrogen.

Abstract: A method of forming with good reproducibility a high-quality thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube which has the steps of, prior to the formation of the thin film forming an intermediate film of a material having good adhesion with both quartz, and the metal or metal compound on the inner wall of the reaction tube, and forming a film of the metal or metal compound for the thin film on the intermediate film.

Abstract: A method for making fine powder of a metallic compound coated with ceramics is described. In the method, a gaseous mixture of at least one metal vapor constituting one component of a metallic compound and a carrier gas for the at least one metal vapor is passed at a speed of 50 to 2000 m/second into another element constituting the other element of the metallic compound or in an atmosphere of a gas containing the other element, which is heated to a temperature of not larger than 0.8 time as low as a melting point of the at least one metal so that the metal vapor and another element are reacted with each other while rapidly cooling, thereby obtaining a fine powder of a metallic compound. The metallic compound fine powder is further passed into other metal vapor or other metallic compound vapor to cover the metallic compound fine powder with the film of the other metal or metallic compound.

Abstract: Diffusion coatings can be masked from portions of a workpiece by combination of layers the outer one of which forms coherent strong shell that holds inner layer or layers in place. All ingredients of these layers can be materials such as nickel, nickel aluminide, chronium, chromic oxide (Cr.sub.2 O.sub.3) and inert diluent, that do not contaminate superalloys or even low alloy or plain carbon steels. Layer can be deposited from suspension in a solution of film-former like and acrylic resin in readily volatilizable solvent such as methyl chloroform or chloroform. Innermost layer can be depletion-preventing and can be omitted. Such a holding shell can also be used to retain on a workpiece surface a layer that causes formation of a diffusion coating. Chromizing can be performed before aluminizing. Low alloy steel conduit can be internally chromized and/or externally chromized or aluminized to make it more desirable for use as high pressure steam boiler heat exchange tubing.

Abstract: A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.

Abstract: A vapor phase method for the synthesis of MgO--Al.sub.2 O.sub.3 --SiO.sub.2 products, including MgO--Al.sub.2 O.sub.3 --SiO.sub.2 glasses of optical quality, wherein SiCl.sub.4, aluminum halide, and organometallic magnesium vapors are oxidized by flame oxidation and the oxides collected and sintered to glass or ceramic products, is described. A added shield gas stream is provided during flame oxidation of the vapors to reduce or prevent MgCl.sub.2 by-product formation at the burner and in the product.

Abstract: A metal is selectively chemically vapor deposited on a substrate through openings in a moisture adsorbing mask layer by maintaining moisture in the mask layer. Thick metal layers are formed by precharging the mask with moisture. Also a cleaned tube is prepared for selective deposition by operating the process with a bare substrate until the tube is coated. The selective deposition is then performed.

Abstract: Pack cementation is used to diffusion bond substantially pore-free nickel to discrete exposed areas of tungsten or molybdenum that are in turn bonded to the surface of a ceramic body, e.g. in the preparation of a ceramic chip carrier.

Abstract: Adherent deposits of tungsten are formed on receiving surfaces by preparing the receiving surface and thereafter forming a thin deposit of polycrystalline silicon on the surface. The surface and the deposited polycrystalline silicon is then exposed to a hydrogen containing tungsten fluoride gas at a suitable temperature to induce the adherent growth of tungsten film on the surface by reaction of the silicon with the tungsten fluoride gas. It is possible to form the polycrystalline silicon in a pattern on the surface and to form the tungsten deposit in the pattern in which the polycrystalline silicon had been deposited.

Abstract: A method is described for treating the surface of a field-effect transistor or a Schottky barrier diode. A polysilicon surface of a gate region of an FET or a single crystalline silicon surface of a Schottky barrier diode may be treated with a low-power argon-plasma for a relatively short period of time to enhance nucleation sites on the surface of the polysilicon or single crystalline silicon. A layer of tungsten or molybdenum may be selectively deposited on the surface of the polysilicon or single crystalline silicon by chemical-vapor deposition through silicon reduction of tungsten hexafluoride or molybdenum hexafluoride.

Abstract: In the pack diffusion coating of chromium into the surface of a superalloy, the formation of undesirable oxide inclusion is reduced when the diffusion coating pack contains at least about 3% Ni.sub.3 Al. Also the formation of alpha-chromium is reduced when the pack diffusion is carried out in a retort effectively not over five inches in height. On the other hand an alpha-chromium-rich layer at least 0.2 mil thick can be deliberately formed and the superalloy thus coated subjected to an aluminizing treatment to convert the alpha-chromium into islands that provide very high sulfidation resistance. Pack aluminizing in the presence of chromium makes a very effective aluminum- or chromium-containing top coating over platinum plated or platinum coated nickel-base superalloys. Depletion of diffusible material from workpieces heated in a powder-pack can also provide a surface on which aluminizing produces a highly impact-resistant coating.

Abstract: Methods are provided for forming protective diffusion layers on nickel, cobalt and iron base alloy parts comprising the formation of a diffusion layer of platinum, chromium and aluminum on said surfaces either by deposition of platinum and gas phase chromizing followed by aluminizing or by gas phase chromizing and deposition of platinum followed by aluminizing, or by gas phase chromizing followed by aluminizing and deposition of platinum, said gas phase chromizing performed out of contact with a source of gaseous chromizing species at elevated temperature, said aluminizing performed either out of contact or in contact with a powder mixture at elevated temperature.

Abstract: A ferrous metal body having a diffusion bonded coating which is corrosion resistant and free of any significant polarization, the bulk of said coating being comprised an alloy of at least about 70% by weight molybdenum, up to about 5% by weight iron balance chromium, the outside surface or surface portion of said coating being comprised of an alloy of at least about 30% by weight chromium, up to about 1% by weight iron, balance molybdenum, said outside surface or outside surface portion of said coating being significantly richer in chromium than said bulk portion, and a diffusion bonding layer comprised of MoCrFe alloy extending from said bulk portion into the surface of said ferrous body, said diffusion bonding layer being comprised of at least about 10% by weight molybdenum, at least about 5% by weight chromium and at least about 10% by weight iron.

Abstract: Methods are provided for forming protective diffusion layers on nickel, cobalt and iron base alloy parts comprising the steps of depositing a coating of a platinum group metal on the surface of the part to be protected and forming a diffusion layer of platinum and aluminum on said surfaces by gas phase aluminizing said surfaces out of contact with a source of gaseous aluminizing species at elevated temperature.

Abstract: Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

Abstract: The invention relates to a method for chromizing metallic pieces such as steel pieces and to chromized metallic pieces obtained thereby, said metallic pieces, particularly steel, comprising a chromized surface layer with a hardness at least equal to 1200 Vickers degrees and a thickness at least equal to 12 microns as well as an adjacent sub-layer with a hardness less than that of the core of said piece. The chromized surface layer has a depth preferably at least equal to 20 microns, more preferably 30 microns, and the hardness of the sublayer presents a maximum variation of 25 Vickers degrees with respect to that of the core of said piece.

Abstract: A low-temperature, electroless process for the plating of nickel metal upon substrate. Nickel, olefin, and trifluorophosphine vapors are condensed and reacted in a vessel. The reaction product is distilled off and condensed onto the surface of a substrate. The surface is warmed and the reaction product allowed to decompose, yielding a coating of nickel metal upon the substrate, gaseous olefin and Ni(PF.sub.3).sub.4.

Abstract: A multilayer coating system for the protection of carbon-carbon composites is described. The coating includes an inner layer of SiC produced by diffusing Si into the carbon substrate (0.5 to 30 mils thick), and at an outer layer of CVD (chemically vapor deposited) SiC (5 to 30 mils thick). Such a coating successfully protects carbon-carbon materials from oxidation at temperatures up to 2500.degree. F. (1371.degree. C.) and above.

Abstract: Carbon-carbon composite materials are provided with significantly enhanced oxidation resistance by the formation of a SiC coating. The coating is produced from a pack containing a small but effective amount of boron. The balance of the pack is preferably based on Al.sub.2 O.sub.3, SiO.sub.2, and Si. The composite to be coated is embedded in the pack and heated to an elevated temperature. The boron addition provides a conversion SiC coating having enhanced resistance to oxidation.

Abstract: The invention concerns an abrasion resistent coating for steel and a method which makes it possible to obtain such a coating.The coating comprises two surface layers. The first surface layer, the outer layer, is formed of the phase (Cr, Fe).sub.2 B and possibly the phase M.sub.23 C.sub.6, while the second surface layer, the inner one, is formed of the phase (Fe, Cr).sub.2 B. In order to obtain this coating, a boriding is effected on steels at a temperature less than or equal to 950.degree. C. for a period of time greater than or equal to four hours, followed by a chromizing at a temperature less than or equal to 950.degree. C. for a period of time greater than or equal to 10 hours.Application to all steels in order to increase their resistance to wear is possible.

Abstract: Low alloy steel tubing is decarburized, chromized and then aluminized with or without masking at the sites at which the tubing is to be welded in place, to greatly increase resistance of the tubing to high temperature oxidation and sulfidation. Low surface aluminum content after aluminizing makes it easier to weld at that surface.

Abstract: Very good masking of pack diffusion aluminizing on any metal to keep portions from being diffusion coated, is effected by localized coating the lowest layer of which is depletion-reducing masking powder that can have same composition as substrates, mixed with non-contaminating film-former such as acrylic resin. The upper coating layer can be of non-contaminating particles like nickel of Cr.sub.2 O.sub.3 that upon aluminizing or chromizing become coherently held together to form a secure sheath. Such sheath can also be used for holding localized diffusion-coating layer in place. Film-former can be dissolved in volatile solvent, preferably methyl chloroform, in which masking powder or sheath-forming powder is suspended. Chromizing can be performed before aluminizing for greater effects. Aluminized cases are stripped from superalloys by alternating dips in fluoride-containing and fluoride-free aqueous nitric acid.

Abstract: A method for making hollow glass microspheres with conducting surfaces by adding a conducting vapor to a region of the glass fabrication furnace. As droplets or particles of glass forming material pass through multiple zones of different temperature in a glass fabrication furnace, and are transformed into hollow glass microspheres, the microspheres pass through a region of conducting vapor, forming a conducting coating on the surface of the microspheres.