Abstract: In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.

Abstract: The present invention describes a CVD process to deposit a titanium film at a high deposition rate that has excellent uniformity and step coverage while avoiding gas phase nucleation and coating of the reactor chamber walls. The vapor of a heated liquid titanium source enters a modified, plasma enhanced, cold wall reaction chamber and is mixed with H.sub.2 as it reaches a wafer substrate surface. As the gas vapors reach the heated wafer substrate a chemical reaction of TiCl.sub.4 +2H.sub.2 .fwdarw.Ti+4HCl is triggered, thereby depositing a uniform titanium film upon the substrate surface. The deposition rate is further enhanced by the presence of rf plasma above the substrate's surface.

Abstract: Fine-grained and/or equiaxed coatings, substantially free from columnar structure, are deposited on substrates by chemical vapor deposition by directing the flow of reactant gases to the substrate with high velocity and in close proximity thereto, most often at a velocity gradient of at least about 1050 and preferably at least about 2000 cm./cm.-sec. The deposition process is preferably conducted while moving the substrate so as to coat large areas thereof. By this method, tungsten and/or rhenium X-ray targets having excellent properties under conditions of rapid temperature cycling may be produced.

Abstract: A method for depositing a layer of additional material onto an electrically conductive thin layer structure preferably by means of the thermally induced reason of a compound in the vapor state, in which the thin structure is heated by an electric current passed through it. The method is especially suitable for reinforcing metallic conductor structures which have been made on a substrate by a direct-writing-laser chemical vapor deposition method, for example, fine tungsten wires.

Abstract: A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.

Abstract: A tungsten film forming apparatus includes a reaction chamber, means for introducing WF.sub.6 into said reaction chamber, and means for introducing H.sub.2 gas into said reaction chamber, wherein at least the portion of at least said reaction chamber is made of the metal material whose surface is covered with the fluorinated paasivation film mainly consisting of the almost stoichiometric metal fluoride. It becomes possible to form a high quality tungsten film at a low substrate temperature by use of said tungsten film forming apparatus.

Abstract: A low temperature process is described for forming a coating or powder comprising one or more metals or metal compounds by first reacting one or more metal reactants with a halide-containing reactant to form one or more reactive intermediates capable of reacting, disproportionating, or decomposing to form a coating or powder comprising the one or more metal reactants. When one or more metal compounds are formed, either as powders or as coatings, a third reactant may be injected into a second reaction zone in the reactor to contact the one or more reactive intermediates formed in the first reaction zone to thereby form one or more metal compounds such as metal nitrides, carbides, oxides, borides, or mixtures of same.

Abstract: Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

Abstract: A method for diffusion coating a workpiece with chromium (Cr), silicon (Si), aluminum (Al), or boron (B) by placing coated ceramic alumino-silicate fibers next to the workpiece and heating to diffuse the diffusion coating into the workpiece. A ceramic carrier is fabricated from the alumino-silicate fibers woven into a predetermined fashion. Alternately the ceramic carrier may be an elongated ceramic carrier. The aqueous diffusion coating composition is applied to the ceramic carrier and then the ceramic carrier is heated at a temperature of between about 150.degree. F. to 250.degree. F. prior to positioning the ceramic carrier proximate a surface of the workpiece. The ceramic carrier and the workpiece are subjected to an elevated temperature in a controlled environment for a sufficient time to cause at least one diffusion element to diffuse into the workpiece to provide the diffusion coating for the external, the internal, or both surfaces of the workpiece.

Abstract: A nickel-base superalloy is subjected to a diffusion chromizing that supplies a chromized diffusion case, the outer surface of which contains excess alphachrome phase, and then contacting the diffusion case with an aqueous solution of alkali metal permanganate and alkali metal hydroxide until the desired amount of alphachrome phase is eliminated.

Abstract: An atmospheric pressure chemical vapor deposition (APCVD) system for doping indium-oxide films with both tin and fluorine to produce dual electron donors in a non-batch process. The APCVD system has a conveyor belt and drive system for continuous processing through one or more reaction chambers separated by nitrogen purge curtains. A substrate passing through the system enters a muffle heated by several heaters and the reaction chambers are supplied by a source chemical delivery system comprising an oxidizer source, a fluorine chemical source, a nitrogen source, rotometers for the above sources, a mass flow controller, a tin chemical bubbler, heated lines, an indium chemical bubbler, a pair of water baths with heaters, and associated valving.

Abstract: A process for forming a porous inorganic membrane on a porous support is provided. The support is coated with refractory particles which sinter at a first temperature. The coating then is impregnated with an inorganic binder which reacts at a second temperature, lower than the first temperature. The impregnated, coated support then is processed at a temperature at least as high as the second temperature, but less than the first temperature.

Abstract: Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.

Abstract: A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.

Abstract: A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110.degree. to 190.degree. C. with a volatile organometallic copper complex, in the gas phase, represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H or C.sub.1 -C.sub.8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.

Abstract: A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

Abstract: An alcohol having an alpha hydrogen with the remaining groupings attached to the carbon atom being either hydrogen or an alkyl group having from 1 to 5 carbon atoms, preferably isopropanol, is added to the flow stream of a copper chelate gas, preferably a copper diketonate, the copper diketonate preferably being Cu(hfac).sub.2 or a composition identical thereto wherein one or more of the fluorine atoms is replaced by one of hydrogen atoms, and alkyl group having from one to five carbon atoms and a gas, preferably a reducing agent, preferably hydrogen. As a second embodiment, some or all of the copper can be replaced by aluminum to provide either Al(hfac).sub.3 or a combination of Cu(hfac).sub.2 and Al(hfac).sub.3.

Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C.sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 --C.sub.8 alkyl and each R.sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.

Abstract: A method for forming connections between copper conductors disposed on a substrate includes the steps of coating the copper conductors with a layer of nickel, exposing the coated copper conductors to a gas which includes a tungsten-bearing compound, and irradiating the substrate with a laser beam to deposit the tungsten between the copper conductors. A system for forming connections between copper conductors disposed on a substrate, includes means for coating the copper conductors with a layer of nickel, means for exposing the coated copper conductors to a gas which includes a tungsten-bearing compound, and means for irradiating the substrate with a laser beam to deposit the tungsten between the copper conductors.

Abstract: Improved adherence of oxide wear layers on hard metal or cemented carbide substrates is obtained by providing a thin surface-oxidized bonding layer comprising a carbide or oxycarbide of at least one of tantalum, niobium or vanadium, optionally adding aluminum to the bonding layer, and finally providing an outer oxide layer layer.

Abstract: A method of depositing tungsten on a substrate utilizing silicon reduction wherein the process is non-limiting as to the thickness of silicon that may be converted to tungsten. A silicon substrate is provided with at least one area of silicon material having a predetermined thickness and the substrate is exposed to a tungsten hexafluoride gas flow in a chemical vapor deposition environment. By adjusting the WF.sub.6 gas flow rate and the CVD process parameters, such as pressure, temperature and deposition time, the thickness of silicon converted to tungsten can be adjusted in order to convert the entire thickness. A novel structure having a midgap tungsten gate and tungsten source and drain metallized layers is also disclosed.

Abstract: A process for forming a diffusion coating to the surface of a metal article. The process is particularly adapted for forming diffusion aluminide coatings on metal blades and vanes used in gas turbine engines. According to the invention, halide vapor is caused to react with a source of aluminum to form an aluminum rich halide gas. This gas then reacts with the part surface to form the aluminide coating. A key aspect of the invention relates to the timing of the reaction between the halide vapor and the source of aluminum.

Abstract: In a process for the simultaneous deposition of a protective coating, e.g. an aluminium based coating, on internal and external surfaces of heat-resistant alloy parts, the parts are placed in a box containing a donor material, preferably in the form of granules, comprising the metal to be deposited, and an activator separate from the donor and comprising at least an anhydrous powder of chromium fluoride CrF.sub.3 to provide a source of fluorine. The box is heated to a temperature above 1000.degree. C. and a controlled flow of a carrier gas, reducing or neutral, is introduced into the box so as to establish a circulation of gases in the box whereby fluorinated vapors from thermal decomposition of the CrF.sub.3 activator contact the donor to form a volatile fluoride of the metal to be deposited, and the volatile vapor is carried into contact with the external and internal surfaces of the parts to be coated to deposit the coating thereon.

Abstract: The surface properties of iron or ferrous alloy are improved by borosiliconizing the surface by contact with a stream of reducing gas containing hydrogen, optionally with an inert gas, to which a gaseous halide or hydride of boron and silicon have been added, either together or sequentially. The temperature of treatment is elevated, e.g. above 350.degree. C., but below 1200.degree. C. Diffusion coatings of both boron and silicon are formed in the ferrous surface. Typical surces of boron and silicon inlude boron trichloride, diborane and silane.

Abstract: A method for manufacturing a precursor wire for a CFRM material, which comprised a continuous carbon fiber bundle of carbon filaments as a reinforcement and a metal as a matrix. In a pretreatment process, the fiber bundle with a sizing agent adhered thereto is passed through an inert atmosphere at a temperature in the range of from 350.degree. to 800.degree. C., thereby thermally decomposing the sizing agent, the chemical structure of the sizing agent including ether linkages, and a residue of thermal decomposition containing the ether linkages is left on the surface of each single filament. In a chemical vapor deposition process, a material gas containing a titanium compound and a boron compound and a reducing gas containing zinc are caused to act simultaneously on the fiber bundle at a temperature in the range of from 700.degree. to 800.degree. C.

Abstract: An improved method of diffusion coating a workpiece, such as ferritic tubing employing a ceramic carrier provided with a diffusion composition. The diffusion composition includes a diffusion element such as chromium, silicon, aluminum, and boron. The carrier is subjected to an elevated diffusion temperature in a controlled environment to diffusion coat either the external or internal surface of the workpiece.

Abstract: The method for producing the disclosed material comprises chemical vapor depositing on the substrate a substantially columnar, intermediate layer of tungsten and chemical vapor depositing on the intermediate layer a non-columnar, substantially lamellar outer layer of a mixture of tungsten and tungsten carbide. The tungsten carbide comprises W.sub.2 C, W.sub.3 C, or a mixture of both wherein the ratio of the thickness of the tungsten intermediate layer to the thickness of the outer layer is at least: (a) 0.35 in the case of tungsten plus W.sub.2 C in the outer layer, (b) 0.6 in the case of a mixture of tungsten and W.sub.3 C in the outer layer and (c) 0.35 in the case of mixtures of tungsten and W.sub.2 C and W.sub.3 C in the outer layer. The chemical vapor deposition steps are carried out at pressures within the range of 1 Torr to 1,000 Torr and temperatures within the range of about 300.degree. to about 650.degree. C.

Abstract: The process for depositing an adherent silver film, especially on a nonconducting substrate, involves depositing the silver film from the gas phase. A plasma discharge in a gas containing volatile silver organic compounds is used. The silver compounds advantageously contain silver atoms which are bonded to an sp.sup.2 -hybridized carbon atom and are halogen-containing, particularly fluorine-containing compounds. The compounds CF.sub.3 --CAg.dbd.CF--CF.sub.3, CF.sub.3 --CAg.dbd.CF.sub.2 and pentafluorophenyl silver may be used. The silver film so formed may be strengthened electrochemically or by chemical reduction. The silver film products are useful as electrically conducting, decorative or reflective layers.

Abstract: The method of making an electrically conductive polymer-metal compound having a predetermined electrical conductivity on a substrate includes the steps of preparing a reaction mixture of a gaseous metallo-organic compound, a metal-free gaseous organic compound and a carrier gas such as argon or mixtures of argon and hydrogen, producing a glow discharge zone in the reaction mixture and exposing the substrate to action of the gaseous metallo-organic compound and the metal-free gaseous organic compound in the glow discharge zone in such a way as to produce a film or layer of the polymer-metal compound with a predetermined electrical conductivity. The selection of the electrical conductivity can be made by setting at least one of a number of parameters of the process including the pressure and temperature of the glow discharge zone, the power density in the glow discharge and particularly the ratio of the amount of metal-free gaseous organic compound to carrier gas.

Abstract: Finely divided silicon carbide materials, particularly powders, whiskers and short fibers, are provided with a titanium nitride surface coating by the process of (i) placing a low carbon diffusivity layer atop the silicon carbide, (ii) placing a titanium metal coating atop the low carbon diffusivity layer, and (iii) nitriding the titanium metal.

Abstract: An improved highly erosive and abrasive wear resistant multi-layered coating system on a substrate which provides protection against impact of large particles is disclosed comprising a plurality of composite layers. In each of the composite layers, the first layer closest to the substrate comprises tungsten of sufficient thickness to confer substantial erosion and abrasion wear resistance characteristics to the coating system and a second layer deposited on the first layer comprises a mixture of tungsten and tungsten carbide and the tungsten carbide comprises W.sub.2 C, W.sub.3 C, or a mixture of both. Because the resulting coating system has enhanced high cycle fatigue strength over the substrate, the coating system is especially useful on such structures as turbine blades and similar articles of manufacture where such chemical vapor depositing the first and second layers at a temperature in the range of about 300.degree. to about 550.degree. C.

Abstract: A method is described for improving the erosion and abrasion wear resistance and hardness of the internal wear surfaces of structures such as nozzles, jets, ducts, chutes, powder handling tubes, valve housings, conveyors, drill bushings and the like. A substantially pure tungsten layer is chemical vapor deposited on the internal wear surface of the body of the structure followed by a chemical vapor deposited top coating comprising a mixture of tungsten and tungsten carbide. The tungsten carbide is selected from the group consisting of W.sub.2 C, W.sub.3 C, and mixtures thereof and is fine grained, non-columnar and has a substantially layered microstructure. Also described are structures formed by the method.

Abstract: An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

Abstract: Methods for selectively applying a diffusion aluminide coating to the surface of a metal article while keeping other article surfaces free of the coating are described. The method includes the steps of injection molding a mixture of materials onto the surfaces which are to be kept free of coating; the material comprises solid particles effective in preventing deposition of the coating onto the surfaces and a moldable amorphous thermoplastic resin; it contains no volatilizable solvents. The mixture is applied to the article surface to a thickness of about 5 millimeters. It is useful in pack diffusion as well as vapor phase diffusion aluminide coating operations.

Abstract: A chromium coating process for coating large size articles such as boiler tubes and boiler tube assemblies, comprises the steps of: (a) mounting on a stationary foundation a retort having a removable cover; (b) covering the articles to be coated in the retort by a chromium source powder containing 3% of ammonium chloride and 42% ferrochromium, the balance consisting of alumina; (c) sealing the cover on the retort; (d) heating the retort to a uniform temperature of 2100.degree. F. for 10 hours; (e) supplying concurrent with the commencement of the heating an inert gas to the interior of the retort; (f) terminating the heating of the retort and shutting off the flow of the inert gas to the retort; (g) cooling the retort and the articles within the retort uniformly throughout to a temperature of 400.degree. F.; (h) removing the cover from the retort; (i) removing the coated articles therefrom.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: A chemical vapor deposition method is characterized in that a heating block and a surface to be deposited of a substrate are arranged to face to each other at a given distance in a closed space, a source gas is guided into the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate. A chemical vapor deposition apparatus includes a heating block arranged in a closed space, a substrate holder for holding a substrate so that a surface to be deposited of the substrate is arranged to face to the heating block at a given distance, and a device for guiding a source gas to the closed space. In this CVD apparatus, the source gas guided by the device is guided to the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate.

Abstract: Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

Abstract: Mechanical seals are imroved in wear properties, erosion, corrosion and galling resistance by forming a diffusion coating in the seal structure surface comprising an intermetallic compound of the seal structure iron, nickel or cobalt base metal and one or more of aluminum, boron, silicon and carbon.

Abstract: The present invention relates to a ferrous article suitable for use in devices for burning heavy and extra heavy petroleum fuels and a process for forming such an article. The article has a matrix formed from a low carbon steel and a corrosion resistant chromium-aluminum diffusion coating on at least one surface. The coating is formed by subjecting the matrix to successive aluminization and chromization pack cementation treatments.

Abstract: A method for forming aluminum films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a aluminum hydride subsequent to the treatment of the substrate with a Group IVB or VB metal complex, so as to deposit a mirror-like coating of aluminum on the surface of a substrate.

Abstract: A method for the formation of a thin, high melting-point metal film such as W, on a substrate surface, by means of CVD, is disclosed herein. In this method, the inner wall of the CVD reaction tube and the surface of the at least part of the fittings disposed therewithin are covered with a metal nitride film, in the process of performing the CVD operation. The method permits the formation of a high quality film, and also prevents the deposition of the high melting-point metal on the inner wall of the reaction chamber, even if the CVD operation is repeatedly performed over a long period of time.

Abstract: An improved method of chromizing the surface of a ferritic boiler component. An aqueous coating composition is applied to the surface to be chromized, which includes at least 10% by weight of chromium, at least 12% by weight alumina, a binder of ammonium alginate or methyl cellulose, and a halide activator, and in which the weight ratio of chromium to water is greater than 0.7. Alternative embodiments involve the application of a halide activator over the top of a previously applied and dried coating that is lacking said halide activator, as well as to the application of multiple layer single component slurry coatings.

Abstract: The invention discloses a coated substrate product comprises of a titanium or titanium alloy substrate, at least one thin interlayer composed of a non-reactive noble metal and a hard outer coating selected from the group comprised of a ceramic, hard metal, a hard metal compound and a diamond-like carbon, wherein at least the non-reactive noble metal interlayer which is immediately adjacent to the titanium or titanium alloy substrate is deposited onto the substrate by means of an electroless plating procedure, and the hard outer coating is deposited onto the non-reactive interlayer(s) by means of known chemical and physical vapor deposition techniques. The invention also discloses a method for making these coated substrate products.

Abstract: A dense, electronically conductive interconnection layer 26 is bonded on a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) forming a layer of oxide particles of at least one of the metals Ca, Sr, Co, Ba or Mg on a part 24 of a first surface of the air electrode 16, (B) heating the electrode structure, (C) applying a halide vapor containing at least lanthanum halide and chromium halide to the first surface and applying a source of oxygen to a second opposite surface of the air electrode so that they contact at said first surface, to cause a reaction of the oxygen and halide and cause a dense lanthanum-chromium oxide structure to grow, from the first electrode surface, between and around the oxide particles, where the metal oxide particles get incoporated into the lanthanum-chromium oxide structure as it grows thicker with time, and the metal ions in the oxide particles diffuse into the bulk of the lanthamum-chromium oxide structure, to

Abstract: 1. Process for flow-discharge-activated reactive deposition of metal from a gas phase.2.1 For the reactive deposition of tubular metal bodies from a flowing gas phase which contains a metal halide, a glow discharge is generated between an inner electrode and an outer electrode, one of which is of tubular construction and serves as substrate. Under these circumstances, an unexpectedly low yield of the metal deposition is obtained in some cases. The novel process is intended to ensure a high metal deposition.2.2 The reactive deposition from the gas phase is carried out in the high plasma resistance range. A preferred technique for establishing the high plasma resistance is to adjust the absolute mass flow of the metal halide to at least 60 sccm.2.3 The novel process makes it possible to manufacture self-supporting thermionic cathodes and other self-supporting materials, layers and shaped bodies for high-temperature applications.3. FIG.

Abstract: A continouous process of forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique having a pressure controlled source of hydrogen chloride gas to maintain a partial pressure of the gas as a function of time as the amount of gallium is depleted from the alloy source melt of Ga/In during the growth of the epitaxial layer.

Abstract: High purity gold films are photochemically deposited on substrates from the gold containing compound (CH.sub.3).sub.2 Au[CH(COCF.sub.3).sub.2 ]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0.degree. C. to 160.degree. C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.

Abstract: A process of forming a metal pattern film on a designated area of a substrate. A vapor stream of a decomposable hexacarbonyl metal compound is directed toward the substrate designated area to form thereon a layer of the decomposable hexacarbonyl metal compound. This layer is irradiated with a focused metal ion beam to decompose the hexacarbonyl metal compound into the gaseous carbonyl component and solid metal component to thereby deposit the solid metal component on the substrate designated area.

Abstract: A method and apparatus for forming a metallic sheet having a concave-convex profile by chemical vapor deposition utilizes a die having a profiled surface defined by a number of spaced protrusions. The method comprises covering at least a portion of the profiled surface with a mask of transparent material in such a way that the mask comes into a closely adjacent relation to the top faces of the protrusions, feeding at a reaction gas of a metallic compound to a restricted space defined between the mask and the profiled surface, radiating a light beam through the transparent mask onto the profiled surface in order to decompose the reaction gas and deposit on the profiled surface a metallic layer, and removing the resulting deposited metallic layer from the profiled surface to obtain a metallic sheet having a concave-convex profile corresponding to the profiled surface of the die.