Plural Metal Containing Coating (e.g., Indium Oxide/tin Oxide, Titanium Oxide/aluminum Oxide, Etc.) Patents (Class 427/255.32)
  • Patent number: 10347472
    Abstract: The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide has an oxygen deficiency, compared to the oxygen content of its fully oxidized form, of at least 0.40 wt %, has a total amount of metal elements other than zirconium of less than 3.0 wt %, based on the total amounts of metal elements including zirconium, and has an X-ray powder diffraction pattern having a peak P1 at 28.2°+/?0.2° 2-theta, a peak P2 at 31.4°+/?0.2° 2-theta, and a peak P3 at 30.2°+/?0.2° 2-theta.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: July 9, 2019
    Assignee: MATERION ADVANCED MATERIALS GERMANY GMBH
    Inventors: Christoph Simons, Andreas Herzog, Markus Schultheis, Anna Schott
  • Patent number: 10246774
    Abstract: A method for performing atomic layer deposition (ALD) on a substrate is provided, including: exposing the substrate to a first reactant and an additive simultaneously, the first reactant and the additive being configured to adsorb on exposed surfaces of the substrate, a partial pressure of the additive being configured so that adsorption of the additive in a gap feature of the substrate decreases as depth increases in the gap feature; after exposing the substrate to the first reactant and the additive, exposing the substrate to a second reactant, the second reactant configured to react with the adsorbed first reactant to form a thin film product, the second reactant configured to react with the adsorbed additive to remove the adsorbed additive from the substrate surface.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: April 2, 2019
    Assignee: Lam Research Corporation
    Inventor: Patrick Van Cleemput
  • Patent number: 9911935
    Abstract: Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: March 6, 2018
    Assignee: International Business Machines Corporation
    Inventors: Bruce A. Ek, Talia S. Gershon, Supratik Guha, Oki Gunawan, Teodor K. Todorov
  • Patent number: 9564311
    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: February 7, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Young Hoon Kim, Dae Youn Kim, Sang Wook Lee
  • Patent number: 9095869
    Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: August 4, 2015
    Assignee: Picosun OY
    Inventors: Vaino Kilpi, Wei-Min Li, Timo Malinen, Juhana Kostamo, Sven Lindfors
  • Patent number: 9023427
    Abstract: Atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A?B?O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: May 5, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Raija Matero, Tom Blomberg
  • Publication number: 20150111795
    Abstract: The present invention relates to a method for coating AI-Cr-0 coatings with the help of a PVD-coating process. The PVD-coating process is performed with the help of Al and Cr comprising targets which are doped with Si. The doping of Si prevents the forming of oxide islands on the target during the reactive coating process.
    Type: Application
    Filed: April 22, 2013
    Publication date: April 23, 2015
    Inventors: Richard Rachbauer, Jurgen Ramm, Joerg Paulitsch, Paul Heinz Mayrhofer
  • Patent number: 9011973
    Abstract: Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Schubert Chu, Er-Xuan Ping, Yoshihide Senzaki
  • Patent number: 8945675
    Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: February 3, 2015
    Assignee: ASM International N.V.
    Inventors: Viljami Pore, Mikko Ritala, Markku Leskelä
  • Patent number: 8927060
    Abstract: There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: January 6, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Yumiko Kawano, Susumu Arima
  • Publication number: 20140287228
    Abstract: A coated cutting insert and a method for making the same. The coated cutting insert has a substrate with a substrate surface. There is a backing coating scheme on the substrate surface, and a TiAl2O3 coating layer wherein the TiAl2O3 coating layer is deposited using chemical vapor deposition from a gaseous composition including AlCl3, H2, TiCl4, CO2 and HCl.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 25, 2014
    Applicant: Kennametal Inc.
    Inventors: Zhenyu Liu, Rodrigo A. Cooper, Peter R. Leicht, Mark S. Greenfield, Yixiong Liu
  • Publication number: 20140287160
    Abstract: The present invention provides a vapour deposition process for the preparation of a phosphate compound, wherein the process comprises providing each component element of the phosphate compound as a vapour, and co-depositing the component element vapours on a common substrate, wherein the component elements react on the substrate to form the phosphate compound.
    Type: Application
    Filed: July 20, 2012
    Publication date: September 25, 2014
    Applicants: TOYOTA MOTOR CORPORATION, ILIKA TECHNOLOGIES LTD.
    Inventors: Brian Elliott Hayden, Christopher Edward Lee, Duncan Clifford Alan Smith, Mark Stephen Beal, Xiaojuan Lu, Chihiro Yada
  • Patent number: 8765222
    Abstract: The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0?A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0?x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1?0.5 A2.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: July 1, 2014
    Assignee: Dowa Electronics Materials Co., Ltd.
    Inventors: Yoshikazu Ooshika, Tetsuya Matsuura
  • Patent number: 8703245
    Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 22, 2014
    Assignees: Iscar, Ltd., Ionbond AG
    Inventors: Albir Layyous, Yehezkeal Landau, Hristo Strakov, Renato Bonetti
  • Publication number: 20140065368
    Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: UT-BATTELLE, LLC
    Inventors: Tolga AYTUG, Mariappan Parans PARANTHAMAN, John T. SIMPSON, Daniela Florentina BOGORIN
  • Patent number: 8663735
    Abstract: Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
    Type: Grant
    Filed: February 13, 2010
    Date of Patent: March 4, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Weimin Li, Thomas M. Cameron
  • Patent number: 8591991
    Abstract: A fabrication method for fabricating a metal oxide film introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor to make contact with a catalyst to generate H2O gas. The H2O gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: November 26, 2013
    Assignees: National University Corporation Nagaoka University of Technology, Tokyo Electron Limited
    Inventors: Kanji Yasui, Hiroshi Nishiyama, Masatoshi Tsukichi, Yasunobu Inoue, Masasuke Takata
  • Patent number: 8568828
    Abstract: A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1×1020 cm?3 and 2×1020 cm?3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm2V?1 s?1 and 60 cm2V?1 s?1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: October 29, 2013
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Xiaonan Li, Timothy A. Gessert
  • Patent number: 8551851
    Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: October 8, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Hanhong Chen, Pragati Kumar, Sunil Shanker, Edward Haywood, Sandra Malhotra, Imran Hashim, Nobi Fuchigami, Prashant Phatak, Monica Mathur
  • Publication number: 20130224457
    Abstract: An article may include a superalloy substrate and a calcia-magnesia-alumina-silicate (CMAS)-resistant thermal barrier coating (TBC) layer overlying the superalloy substrate. In some embodiments, the CMAS-resistant TBC layer includes between about 50 wt. % and about 90 wt. % of a TBC composition and between about 10 wt. % and about 50 wt. % of a CMAS-resistant composition. In some examples, the TBC composition includes at least one of yttria-stabilized zirconia, yttria-stabilized hafnia, zirconia stabilized with at least three rare earth oxides, or hafnia stabilized with at least three rare earth oxides. In some examples, the CMAS-resistant composition includes alumina, silica, and an oxide of at least one of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Yb, Dy, Ho, Er, Tm, Tb, or Lu.
    Type: Application
    Filed: July 19, 2011
    Publication date: August 29, 2013
    Applicant: ROLLS-ROYCE CORPORATION
    Inventor: Kang N. Lee
  • Patent number: 8512798
    Abstract: The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: August 20, 2013
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
  • Patent number: 8507039
    Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: August 13, 2013
    Assignee: ASM America, Inc.
    Inventors: Tuomo Suntola, Sven Lindfors
  • Patent number: 8481122
    Abstract: ALD-type methods which include providing two or more different precursors within a chamber at different and substantially non-overlapping times relative to one another to form a material, and thereafter exposing the material to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: July 9, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Chris M. Carlson, Vishwanath Bhat, F. Daniel Gealy
  • Patent number: 8470401
    Abstract: The disclosure is directed to a process for depositing a group V metal containing film on a substrate by introducing a substrate into a reactor; preferably heating the substrate at a temperature above 150° C.; feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor; optionally feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor; and thereby depositing the group V metal containing film onto said substrate.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: June 25, 2013
    Assignee: L'Air Liquide, Socété Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Nicolas Merle, Stéphane Danielle, Christian Dussarrat, Nicolas Blasco
  • Publication number: 20130143018
    Abstract: Coated polymer compositions having improved dielectric strength are disclosed. The coated polymer compositions can comprise a polymer substrate and an inorganic material. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 6, 2013
    Applicant: Sabic Innovative Plastics IP B.V.
    Inventor: Sabic Innovative Plastics IP B.V.
  • Patent number: 8388709
    Abstract: A coated article, in particular a tool for cutting machining, has at least one titanium diboride layer which has been deposited by a thermal CVD process and has a thickness of at least 0.1 ?m. The titanium diboride layer has an extremely fine-grained microstructure with an average grain size of not more than 50 nm.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: March 5, 2013
    Assignee: Ceratizit Austria Gesellschaft GmbH
    Inventors: Wolfgang Wallgram, Uwe Schleinkofer, Karl Gigl, Josef Thurner
  • Patent number: 8383525
    Abstract: Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: February 26, 2013
    Assignee: ASM America, Inc.
    Inventors: Petri Raisanen, Steven Marcus
  • Patent number: 8372684
    Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: February 12, 2013
    Assignee: Stion Corporation
    Inventors: Robert D. Wieting, Steven Aragon, Chester A. Farris, III
  • Patent number: 8361550
    Abstract: A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: January 29, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Akinobu Kakimoto, Yumiko Kawano
  • Patent number: 8343591
    Abstract: A method for use with a coating process includes depositing a ceramic coating on a substrate within a coating chamber. Prior to depositing the ceramic coating, an electron beam source is used to heat a ceramic material. The ceramic material radiates heat to heat a substrate to an oxidation temperature to form an oxide layer on the substrate. A desired evaporation rate of the ceramic material is established during the heating to thereby provide an improved ceramic coating.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: January 1, 2013
    Assignee: United Technologies Corporation
    Inventors: James W Neal, Michael J. Maloney, David A. Litton, Christopher Masucci
  • Patent number: 8329253
    Abstract: A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: December 11, 2012
    Assignee: National Taiwan University
    Inventors: Feng-Yu Tsai, Chun-Ting Chou
  • Publication number: 20120225285
    Abstract: Coated substrates having high wear resistant coatings are disclosed. The coatings include at least one layer of either titanium oxycarbonitride or titanium aluminum oxycarbonitride, such that the layer has an oxygen to titanium atomic percent ratio in the range of about 0.01 to about 0.09 and an aluminum to titanium atomic percent ratio in the range of about 0 to about 0.1. The coatings have a hardness to Young's modulus ratio of at least 0.06. The substrate may be a cutting insert. Methods of making such coated substrates are also disclosed in which layers comprising titanium oxycarbonitride or titanium aluminum oxycarbonitride are deposited by medium temperature chemical vapor deposition (MT-CVD) on substrates in the temperature range of about 750 to about 950° C. using a mixture of gases wherein the ratio of the hydrogen gas to the nitrogen gas is greater than 5.
    Type: Application
    Filed: March 4, 2011
    Publication date: September 6, 2012
    Applicant: KENNAMETAL INC.
    Inventors: Zhigang Ban, Yixiong Liu, Mark S. Greenfield
  • Patent number: 8236097
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: August 7, 2012
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Publication number: 20120196030
    Abstract: A coating apparatus comprises a coating chamber for coating the articles. The at least one preheat chamber is coupled to the coating chamber. The at least one loading station has a proximal end connectable to at least one of the preheat chambers when in an installed position at a distal end of the preheat chamber. The loading station further includes a carrier for carrying the articles and a drive system. The drive system is positioned to move the carrier between: a loading/unloading position of the carrier in the loading station; a preheat position of the carrier in the preheat chamber to which the loading station is connected; and a deposition position of the carrier in the coating chamber. A gas source is connected to the preheat chamber.
    Type: Application
    Filed: November 30, 2010
    Publication date: August 2, 2012
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: James W. Neal, Robert F. Latour, Benjamin J. Zimmerman
  • Patent number: 8221838
    Abstract: A method of making a coated body wherein the method includes the following sequential steps. First, providing a substrate Second, applying by chemical vapor deposition a titanium carbonitride coating layer that has a thickness equal to between about 0.5 micrometers and about 25 micrometers Third, applying by chemical vapor deposition a first titanium/aluminum-containing coating layer that has a thickness between a greater than zero micrometers and about 5 micrometers. Fourth, applying by chemical vapor deposition an alumina coating layer that has a thickness between greater than zero micrometers and about 5 micrometers. The first titanium-containing coating layer and the alumina coating layer makes up a coating sequence, and the method includes applying a plurality of the coating sequences by CVD.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: July 17, 2012
    Assignee: Kennametal Inc.
    Inventors: Alfred S. Gates, Jr., Charles G. McNerny, Pankaj K. Mehrotra, Peter R. Leicht
  • Patent number: 8197721
    Abstract: The invention provides improved conditions for atmospheric pressure chemical vapor deposition (APCVD) of vanadium (IV) oxide. Specifically, higher quality vanadium oxide (particularly in the form of films) can be obtained by employing concentrations of precursors in the APCVD reaction which are substantially less than those used previously. These conditions improve the reproducibility of the films obtained by APCVD and also prevent particulate formation in the manufacturing apparatus, which in previous work had caused blockages. The films obtained have improved visual appearance, especially color, and/or have improved adhesion to a substrate. The obtained films also show a greater difference in transmission above and below the switching temperature than previous films. The invention also provides doped vanadium oxide, particularly with tungsten. Substrates (e.g. glass substrates) coated with a film of vanadium oxide are also provided.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: June 12, 2012
    Assignee: UCL Business PLC
    Inventors: Christopher Stuart, Ivan Paul Parkin
  • Patent number: 8192793
    Abstract: Coated cemented carbide inserts are particularly useful for wet or dry milling steels. The inserts are formed by a cemented carbide body including WC, NbC and a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: June 5, 2012
    Assignee: Seco Tools AB
    Inventors: Anna Sandberg, Andreas Larsson, Tommy Larsson
  • Publication number: 20120107505
    Abstract: There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.
    Type: Application
    Filed: June 2, 2010
    Publication date: May 3, 2012
    Applicant: Tokyo Electron Limited
    Inventors: Yumiko Kawano, Susumu Arima
  • Patent number: 8163342
    Abstract: A low-resistivity, doped zinc oxide coated glass article is formed by providing a hot glass substrate having a surface on which a coating is to be deposited, the surface being at a temperature of at least 400° C. A zinc containing compound, an oxygen-containing compound and an aluminum- or gallium-containing compound are directed to the surface on which the coating is to be deposited. The zinc containing compound, oxygen-containing compound, and aluminum- or gallium-containing compound are mixed together for a sufficient time that an aluminum or gallium doped zinc oxide coating is formed on the surface at a deposition rate of greater than 5 nm/second.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: April 24, 2012
    Assignees: Pilkington Group Limited, Arkema, Inc.
    Inventors: Jeffery L. Stricker, Ryan C. Smith, Michael B. Abrams, Roman Y. Korotkov, Gary S. Silverman, Kevin David Sanderson, Liang Ye, Guillermo Benito Gutiérrez
  • Patent number: 8147909
    Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: April 3, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shuo-Jieh Wu, Hsu Chun Yuan, Tung-Li Lee, Steven Li, Hs Chiu, Yen-Yu Chen, Alan Chen, Ming Jie He, Yu-Wei Hsueh
  • Patent number: 8114480
    Abstract: The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alternation cyclically, at least the first starting material of which contains the first component, to deposit essentially only one layer of the first component in each cycle.
    Type: Grant
    Filed: June 14, 2007
    Date of Patent: February 14, 2012
    Assignee: Aixtron Inc.
    Inventors: Peter Baumann, Johannes Lindner
  • Patent number: 8097302
    Abstract: Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: January 17, 2012
    Assignee: Arkema Inc.
    Inventors: Roman Y. Korotkov, David A. Russo, Thomas D. Culp, Gary S. Silverman, Pierre Beaujuge
  • Patent number: 8053029
    Abstract: Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.
    Type: Grant
    Filed: July 10, 2007
    Date of Patent: November 8, 2011
    Assignees: Samsung SDI Co., Ltd., Samsung Electronics Co., Ltd., Seoul National University Industry Foundation, Chung-Ang University Industry-Academy Cooperation Foundation
    Inventors: Il Wun Shim, Seung Soo Lee, Kook Won Seo, Jong Pil Park
  • Publication number: 20110223320
    Abstract: A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
    Type: Application
    Filed: March 9, 2010
    Publication date: September 15, 2011
    Inventors: Zhe Song, Chris M. Carlson
  • Patent number: 8017182
    Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: September 13, 2011
    Assignee: ASM International N.V.
    Inventors: Menso Hendriks, Martin Knapp, Suvi Haukka
  • Publication number: 20110206846
    Abstract: A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.
    Type: Application
    Filed: September 30, 2010
    Publication date: August 25, 2011
    Inventors: Jeffrey W. ELAM, Joseph A. Libera
  • Publication number: 20110207283
    Abstract: Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: February 22, 2010
    Publication date: August 25, 2011
    Inventors: Suvi Haukka, Hannu Huotari, Marko Tuominen
  • Patent number: 7981473
    Abstract: A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: July 19, 2011
    Assignee: Aixtron, Inc.
    Inventors: Gi Youl Kim, Anuranjan Srivastava, Thomas E. Seidel, Ana R. Londergan, Sasangan Ramanathan
  • Patent number: 7968452
    Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: June 28, 2011
    Assignee: Intermolecular, Inc.
    Inventors: Hanhong Chen, Pragati Kumar, Sunil Shanker, Edward Haywood, Sandra Malhotra, Imran Hashim, Nobi Fuchigami, Prashant Phatak, Monica Mathur
  • Publication number: 20110143053
    Abstract: A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.
    Type: Application
    Filed: September 24, 2008
    Publication date: June 16, 2011
    Applicant: TOSHIBA MITSUBISHI-ELECTRIC INDUS. SYS.CORP
    Inventors: Takahiro Shirahata, Hiroyuki Orita, Akio Yoshida, Masahisa Kogura