Plural Metal Containing Coating (e.g., Indium Oxide/tin Oxide, Titanium Oxide/aluminum Oxide, Etc.) Patents (Class 427/255.32)
  • Patent number: 6551718
    Abstract: Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.
    Type: Grant
    Filed: June 11, 1999
    Date of Patent: April 22, 2003
    Assignee: Gencoa Ltd.
    Inventor: Victor Bellido-Gonzalez
  • Patent number: 6541278
    Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: April 1, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiyoyuki Morita, Takashi Ohtsuka, Michihito Ueda
  • Patent number: 6528118
    Abstract: A process for creating microgrooves within or adjacent to a TBC layer applied to a gas turbine engine component such as a blade or vane. The process includes the steps of applying a bond coat to the surface of the substrate. A wire mesh is placed a predetermined distance above the bond coat surface. With the wire mesh in position, about 0.002 inches of an inner TBC is applied over the bond coat. The wire in the wire mesh causes a shadow effect as the TBC is applied, so that there are variations in the thickness of the applied TBC, forming micro channels. The wire mesh is removed and an additional outer TBC layer is applied over the inner TBC layer, and the variations in thickness are bridged by the continued deposition of the columnar TBC over the inner TBC layer, forming the microgrooves.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: March 4, 2003
    Assignee: General Electric Company
    Inventors: Ching-Pang Lee, Ramgopal Darolia, Robert Edward Schafrik
  • Patent number: 6527848
    Abstract: A new complex of an element of transition group IV or V is provided for forming an improved precursor combination for use in chemical vapor deposition (CVD). This complex dispenses with an alkoxide ligand having an &agr; proton, so that hydrolysis of the complex no longer liberates a reducing agent.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: March 4, 2003
    Assignee: Infineon Technologies AG
    Inventors: Frank Hintermaier, Ralf Metzger, Christoph Werner
  • Patent number: 6524651
    Abstract: A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: February 25, 2003
    Assignee: Battelle Memorial Institute
    Inventors: Shupan Gan, Yong Liang
  • Patent number: 6524647
    Abstract: A niobium doped tin oxide coating is applied onto a glass substrate to produce a low emissivity (low E) glass. The coating can optionally be doped with both niobium and other dopant(s), such as fluorine. The low emissivity glass has properties comparable or superior to conventional low E glass with fluorine doped tin oxide coatings.
    Type: Grant
    Filed: March 24, 2000
    Date of Patent: February 25, 2003
    Assignee: Pilkington plc
    Inventors: Srikanth Varanasi, David A. Strickler, Kevin Sanderson
  • Patent number: 6521295
    Abstract: Antimony doped tin oxide coatings on glass are prepared by providing a uniform, vaporized reactant mixture containing an organotin compound, an organoantimony compound, water and oxygen, and delivering the reactant mixture to the surface of the hot ribbon of glass, where the compounds react to form an antimony doped tin oxide coating. The antimony doped tin oxide coatings applied in accordance with the invention exhibit improved uniformity in thickness and sheet resistance over the coated surface of the glass, and increased coating/manufacturing efficiency.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: February 18, 2003
    Assignee: Pilkington North America, Inc.
    Inventor: Michael P. Remington, Jr.
  • Patent number: 6511706
    Abstract: A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: January 28, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers-Christos, Jeffrey F. Roeder, Witold Paw
  • Patent number: 6511718
    Abstract: A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: January 28, 2003
    Assignee: Symetrix Corporation
    Inventors: Carlos A. Paz de Araujo, Larry D. McMillan, Narayan Solayappan, Jeffrey W. Bacon
  • Patent number: 6503561
    Abstract: The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: January 7, 2003
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Yoshihide Senzaki, David Allen Roberts, John Anthony Thomas Norman, Arthur Kenneth Hochberg
  • Patent number: 6500489
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: December 31, 2002
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies Corporation
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Patent number: 6500487
    Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.
    Type: Grant
    Filed: October 18, 1999
    Date of Patent: December 31, 2002
    Assignee: Advanced Technology Materials, Inc
    Inventors: Mark Holst, Rebecca Faller, Glenn Tom, Jose Arno, Ray Dubois
  • Patent number: 6500499
    Abstract: Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: December 31, 2002
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Yoshihide Senzaki, Arthur Kenneth Hochberg, David Allen Roberts, John Anthony Thomas Norman, Glenn Baldwin Alers, Robert McLemore Fleming
  • Patent number: 6485564
    Abstract: In a thin film forming method of the invention, an atmosphere for a base as a thin film forming target is set to a high vacuum of, e.g., 0.01 Torr or less, and a gas of an organometallic compound and an oxidizing gas are introduced onto a base surface heated to about 450° C., to form a plurality of crystal nuclei, made of an oxide of a metal constituting the organometallic compound, on the base surface. The atmosphere for the base is then set to a lower vacuum than the first vacuum degree, and the gas of the organometallic compound and the oxidizing gas are subsequently introduced onto the base surface heated to about 45° C., to form a film made of the oxide of the metal there.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: November 26, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Yijun Liu, Hiroshi Shinriki, Takashi Magara
  • Patent number: 6485784
    Abstract: Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: November 26, 2002
    Assignee: Qinetiq Limited
    Inventors: Timothy J Leedham, Peter J Wright, Anthony C Jones, Michael J Crosbie
  • Patent number: 6468380
    Abstract: The present invention is directed to transparent articles including a microembossed image such as a hologram or diffraction grating, coated at least in-part, with a layer of material having a refractive index that differs from the refractive index of the transparent layer by about 0.2 units and can be prepared by solution coating techniques such as conventional printing, e.g., rotogravure.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: October 22, 2002
    Assignee: Foilmark, Inc.
    Inventors: Christopher C. Christuk, Nikos J. Georgakakis, Robert J. Balaam
  • Patent number: 6444264
    Abstract: A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(tetraglyme), Ta(OiPr)4(thd) and Bi(thd)3 which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as &bgr;-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and/or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: September 3, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Thomas H. Baum
  • Patent number: 6432478
    Abstract: A ceramic heat barrier coating is deposited on a substrate so that the coating has a columnar growth pattern which is interrupted and repeated a number of times throughout its thickness by successive regermination of the ceramic deposit. The regermination is obtained by a vapor phase deposition process wherein a polluting gas is introduced intermittently during the deposition of the ceramic. The resulting ceramic coating has a lower thermal conductivity than conventional columnar ceramic coatings.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: August 13, 2002
    Assignee: Societe Nationale d'Etude et de Construction de Moteurs d'Aviation “Snecma” and Snecma Services
    Inventors: Yann Philippe Jaslier, André Hubert Louis Malie, Jean-Pierre Julien Charles Huchin, Serge Alexandre Alperine, Romain Portal
  • Patent number: 6428850
    Abstract: A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.
    Type: Grant
    Filed: July 10, 2000
    Date of Patent: August 6, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinriki, Yijun Liu, Masahito Sugiura
  • Patent number: 6409830
    Abstract: An organometallic compound of formula LiOR′.(R′O)MR2 is vaporized at a low temperature and employed in a CVD process of a heterometallic oxide film of the LiMO2 type, wherein M is a Group 13 element such as Al or Ga; R is a C1-10 alkyl group; and R′ is a C2-10 alkyl group.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: June 25, 2002
    Assignee: Korea Research Institute of Chemical Technology
    Inventors: Yun-Soo Kim, Won-Yong Koh, Su-Jin Ku
  • Publication number: 20020071912
    Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.
    Type: Application
    Filed: December 7, 2000
    Publication date: June 13, 2002
    Applicant: First Solar, LLC
    Inventor: Dean M. Giolando
  • Patent number: 6395381
    Abstract: Objects of the invention are to provide a novel vapor deposition material for coating from which a thermal barrier coating film excellent in heat resistance and thermal shock resistance can be satisfactorily formed even by the EB-PVD method, and to provide a method of vapor deposition in which the vapor deposition material is used. The vapor deposition material comprises a zirconia sintered body containing a stabilizer, wherein the sintered body has a content of monoclinic crystals of from 25 to 90% and has a maximum thermal expansion ratio not exceeding 6×10−3 based on room temperature when heated in the temperature range of from room temperature to 1,200° C. This zirconia sintered body preferably has a tapped density of from 3.0 to 5.5 g/cm3, a porosity of from 5 to 50%, and a mode size of pores of from 0.3 to 10 &mgr;m, and in the sintered body the volume of pores of from 0.1 to 10 &mgr;m preferably accounts for at least 90% of the total pore volume.
    Type: Grant
    Filed: May 19, 2000
    Date of Patent: May 28, 2002
    Assignee: Tosoh Corporation
    Inventors: Satoshi Kondo, Yoshitaka Kubota, Yoshinori Harada
  • Patent number: 6383555
    Abstract: A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
    Type: Grant
    Filed: July 13, 2000
    Date of Patent: May 7, 2002
    Assignees: Symetrix Corporation, Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinichiro Hayashi, Larry D. McMillan, Carlos A. Paz de Araujo
  • Patent number: 6355097
    Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: March 12, 2002
    Assignee: Mitsubishi Materials Corporation
    Inventors: Atsushi Itsuki, Taiji Tachibana, Hiroto Uchida, Katsumi Ogi
  • Patent number: 6346301
    Abstract: The invention relates to a component having a substrate and a ceramic heat-insulating layer which is arranged thereon. This heat-insulating layer has a columnar structure having ceramic stems which are essentially oriented mainly normal to the surface of the substrate and have a respective stem diameter of less than 2.5 &mgr;m. The invention also relates to a coating apparatus for producing a heat-insulating layer on a substrate and to a method of coating a substrate in the manner of a reactive gas-flow sputtering method.
    Type: Grant
    Filed: March 20, 2001
    Date of Patent: February 12, 2002
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfram Beele, Thomas Jung, Peter-Jochen Brand
  • Patent number: 6342278
    Abstract: A method of depositing a ceramic thermal barrier coating on an article that will be subjected to a hostile environment, such as turbine, combustor and augmentor components of a gas turbine engine. The thermal barrier coating is deposited by electron beam physical vapor deposition (EBPVD) using process parameters that include an absolute pressure of greater than 0.010 mbar and an oxygen partial pressure of greater than 50%, preferably at or close to 100%. Under these conditions, the desired ceramic material is evaporated with an electron beam to produce a vapor that deposits on the component to form a thermal barrier coating of the ceramic material.
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: January 29, 2002
    Assignee: General Electric Company
    Inventors: Joseph D. Rigney, Antonio F. Maricocchi, Brent R. Tholke, Karl S. Fessenden, John D. Evans, Sr.
  • Patent number: 6338873
    Abstract: Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
    Type: Grant
    Filed: July 6, 2000
    Date of Patent: January 15, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Witold Paw, Thomas H. Baum
  • Publication number: 20020001969
    Abstract: A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH3)3) as an aluminum source and H2O as an oxygen reaction gas, the disclosed method supplies a NH3 reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.
    Type: Application
    Filed: June 18, 2001
    Publication date: January 3, 2002
    Inventors: Hyuk Kyoo Jang, Chan Lim
  • Publication number: 20010053424
    Abstract: A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the substrate. The substrate is preferably a single-crystal advanced superalloy selected for use at high temperatures. The substrate may optionally have a ceramic layer deposited over the platinum-aluminide region, to produce a thermal barrier coating system. The platinum-aluminide region is produced by diffusing platinum into the substrate surface, and thereafter diffusing aluminum into the substrate surface.
    Type: Application
    Filed: February 10, 1999
    Publication date: December 20, 2001
    Inventor: JON C. SCHAEFFER
  • Publication number: 20010046558
    Abstract: A method of fabricating polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal sulfides or selenides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands and H2Z (Z=S, Se) as precursors. The present invention also discloses a method of fabricating metal oxide polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal oxides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands as one of precursors. Main object of the present invention is to provide a method of fabricating high quality EL device using the above technique.
    Type: Application
    Filed: September 30, 1999
    Publication date: November 29, 2001
    Inventors: YONG SHIN KIM, SUN JIN YUN, SANG HEE PARK
  • Patent number: 6296895
    Abstract: A pure metal is vaporized in a receiver, and a quantity of oxygen slightly substoichiometric for the oxide is introduced. To determine the thickness of the layer deposited on the film and to control the vaporization rate, optical sensors are installed in an area where the layer, because of the presence of unoxidized metal, has sufficient absorption for optical measurement. After the determination of the transparency by the sensors, the layer is subjected to a secondary oxidation process.
    Type: Grant
    Filed: May 1, 1995
    Date of Patent: October 2, 2001
    Assignee: Balzers und Leybold Deutschland Holding AG
    Inventors: Gerhard Steiniger, Rainer Ludwig, Gerd Hoffmann
  • Patent number: 6287637
    Abstract: A multi-layer ferroelectric thin film includes a nucleation layer, a bulk layer, and an optional cap layer. A thin nucleation layer of a specific composition is implemented on a bottom electrode to optimize ferroelectric crystal orientation and is markedly different from the composition required in the bulk of a ferroelectric film. The bulk film utilizes the established nucleation layer as a foundation for its crystalline growth. A multi-step deposition process is implemented to achieve a desired composition profile. This method also allows for an optional third composition adjustment near the upper surface of the film to ensure compatibility with an upper electrode interface and to compensate for interactions resulting from subsequent processing.
    Type: Grant
    Filed: October 27, 1999
    Date of Patent: September 11, 2001
    Assignee: Ramtron International Corporation
    Inventors: Fan Chu, Glen Fox, Brian Eastep
  • Patent number: 6277436
    Abstract: A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: August 21, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Gregory T. Stauf, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 6271498
    Abstract: A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an electrode) disposed in the vaporizing container in such a manner that the nozzle is electrically insulated from the vaporizing container. Moreover, the vaporizing apparatus has a cleaning-solution supply apparatus for supplying, to the inside portion of the vaporizing container, a cleaning solution for solving residues generated in the vaporizing container and a plasma generating power source for supplying high-frequency electric power to a position between the nozzle and the vaporizing container to generate plasma in the vaporizing container by using the vaporized cleaning solution.
    Type: Grant
    Filed: June 22, 1998
    Date of Patent: August 7, 2001
    Assignee: Nissin Electric Co., LTD
    Inventors: Koji Miyake, Hajime Kuwahara, Tsukasa Hayashi
  • Patent number: 6258733
    Abstract: A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominantly negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area.
    Type: Grant
    Filed: July 21, 2000
    Date of Patent: July 10, 2001
    Assignee: Sand hill Capital II, LP
    Inventors: Narayan Solayappan, Robert W. Grant, Larry D. McMillan, Carlos A. Paz de Araujo
  • Publication number: 20010006724
    Abstract: For coating a cutting tool with an aluminum oxide layer, a bonding layer has been provided that is preferably formed by aluminum titanate and has a flake-like crystal structure. This bonding layer improves the adherence of an aluminum oxide layer, in particular to underlying titanium nitride, titanium carbide, or titanium carbonitride layers.
    Type: Application
    Filed: December 22, 2000
    Publication date: July 5, 2001
    Inventor: Helga Holzschuh
  • Patent number: 6248394
    Abstract: The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: June 19, 2001
    Assignee: Agere Systems Guardian Corp.
    Inventors: Honghua Du, John Edwin Graebner, Sungho Jin, David Wilfred Johnson, Jr., Wei Zhu
  • Patent number: 6245451
    Abstract: A ferroelectric material having a basic structure of ReMnO3, said ferroelectric material comprises Re and Mn one of which is contained in excess of the other to a limit of 20 at. % or the ferroelectric material is further added with a 4-valence element. Also, a method of forming a ferroelectric material, comprises decreasing an oxygen partial pressure within a growth reactor such as a vacuum deposition reactor, and forming a film on a film-forming surface of a substrate (4) while blowing an oxidizing source thereto. This structure provides a ferroelectric material low in leak current and improved in ferroelectric characteristics. Where using the material for a semiconductor memory device, its characteristics can be improved.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: June 12, 2001
    Assignee: Rohm Co., Ltd.
    Inventors: Akira Kamisawa, Norifumi Fujimura
  • Patent number: 6238734
    Abstract: The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: May 29, 2001
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Yoshihide Senzaki, David Allen Roberts, John Anthony Thomas Norman
  • Patent number: 6235649
    Abstract: A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: May 22, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takaaki Kawahara, Mikio Yamamuka, Tsuyoshi Horikawa, Masayoshi Tarutani, Takehiko Sato, Shigeru Matsuno
  • Patent number: 6210744
    Abstract: A method for coating a component with a thermal barrier coating, includes placing the component in a coating chamber and maintaining the component at a component temperature. A vacuum is established in the coating chamber. The process parameters vacuum pressure and component temperature are controlled together, at least during the coating process with a deposition of material forming the thermal barrier coating. The control takes place in such a way that the parameters are in a respective set-point value range and the thermal barrier coating grows with a columnar structure on the component. A coating device is also provided.
    Type: Grant
    Filed: November 30, 1998
    Date of Patent: April 3, 2001
    Assignee: Siemens Aktiengesellschaft
    Inventors: Burkhard Hayess, Wolfram Beele
  • Patent number: 6207302
    Abstract: First and second insulating layers in an EL device are respectively composed of Al2O3/TiOx:Ba laminated layers. The Al2O3/TiOx:Ba laminated layers are formed by alternately laminating Al2O3 layers and TiO2 layers added with Ba by an ALE method. Adding Ba into the TiO2 layers mitigates a change in resistivity thereof with respect to a change in temperature. As a result, the EL device provides an excellent voltage withstanding performance which is stable against the changes in the temperature.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: March 27, 2001
    Assignee: DENSO Corporation
    Inventors: Kazuhiko Sugiura, Masayuki Katayama, Nobuei Ito