Gallium (ga), Aluminum (al), Or Indium (in) Containing Patents (Class 427/255.34)
  • Patent number: 10373906
    Abstract: Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: August 6, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jyh-Nan Lin, Tsung-Dar Lee, Li Chen
  • Patent number: 9409784
    Abstract: A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70?X?1.0, preferably 0.75?X?0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: August 9, 2016
    Assignee: Ceratizit Austria GmbH
    Inventor: Christoph Czettl
  • Publication number: 20150140215
    Abstract: The present invention is related to carbon-doped metal oxide films. A method of depositing a low friction metal oxide film on a substrate is provided, including: using an atomic layer deposition technique, wherein said metal oxide film is deposited using at least an organo-metallic precursor, and wherein said substrate is at a temperature of 150° C. or lower during deposition of said metal oxide film, whereby a carbon-doped metal oxide film is obtained. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion is less than 10 ?J/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: Boris Kobrin, Romuald Nowak, Jeffrey D. Chinn
  • Publication number: 20150099108
    Abstract: A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70?X?1.0, preferably 0.75?X?0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.
    Type: Application
    Filed: February 25, 2013
    Publication date: April 9, 2015
    Inventor: Christoph Czettl
  • Publication number: 20150064431
    Abstract: In one aspect, cutting tools are described having coatings adhered thereto which, in some embodiments, demonstrate desirable wear resistance and increased cutting lifetimes. A coated cutting tool described herein comprises a substrate and a coating adhered to the substrate, the coating including a refractory layer comprising plurality of sublayer groups, a sublayer group comprising an aluminum oxynitride (AlON) sublayer or a composite AlON sublayer and an alumina (Al2O3) sublayer or composite alumina sublayer.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Applicant: Kennametal Inc.
    Inventors: Volkmar Sottke, Karl Heinz Wendt, Hartmut Westphal, Peter Leicht, Yixiong Liu
  • Publication number: 20150050480
    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film comprising a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having an aluminium compound layer containing one or more compounds selected from the group consisting of aluminium oxide, aluminium nitride and aluminium carbide between the plastic film and the organic layer; the plastic film and the aluminium compound layer, and the aluminium compound layer and the organic layer being directly in contact to each other respectively; the thickness of the aluminium compound layer being 40 nm or less; and the organic layer being a layer formed of a composition containing a polymerizable compound and a phosphate compound.
    Type: Application
    Filed: September 26, 2014
    Publication date: February 19, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Shinya SUZUKI, Seigo NAKAMURA
  • Publication number: 20150004319
    Abstract: A vapor phase growth method is disclosed. The method includes a step of preparing a substrate in a chamber, a first step of adsorbing only a first element to the substrate by supplying a first source material into the chamber, a second step of stopping supply of the first source material into the chamber, a third step of adsorbing only a second element to the substrate by supplying a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber, a fourth step of stopping supply of the first source material into the chamber, and a fifth step of repeating from the first step to the fourth step.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 1, 2015
    Inventor: Chihoko MIZUE
  • Patent number: 8916005
    Abstract: A slurry and slurry coating process for forming a diffusion aluminide coating on a substrate, including internal surfaces within the substrate. The process involves preparing a slurry of a powder containing a metallic aluminum alloy having a melting temperature higher than aluminum, an activator capable of forming a reactive halide vapor with the metallic aluminum, and a binder containing an organic polymer. The slurry is applied to surfaces of the substrate, which is then heated to burn off the binder, vaporize and react the activator with the metallic aluminum to form the halide vapor, react the halide vapor at the substrate surfaces to deposit aluminum on the surfaces, and diffuse the deposited aluminum into the surfaces to form a diffusion aluminide coating. The process can be tailored to selectively produce an inward or outward-type coating. The binder burns off to form an ash residue that can be readily removed.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: December 23, 2014
    Assignee: General Electric Company
    Inventors: Dennis William Cavanaugh, Canan Uslu Hardwicke, Matthew James OConnell, Todd Steven Moran
  • Publication number: 20140335272
    Abstract: In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al2O3) or zirconium oxide may be used as the coating material.
    Type: Application
    Filed: July 29, 2014
    Publication date: November 13, 2014
    Applicant: BENEQ OY
    Inventors: Milja MAKELA, Pekka SOININEN, Sami SNECK
  • Publication number: 20140335363
    Abstract: The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
    Type: Application
    Filed: July 24, 2014
    Publication date: November 13, 2014
    Inventors: Wonyong Koh, Byungsoo Kim, Dong Hwan Ma
  • Patent number: 8865260
    Abstract: A coated ceramic cutting insert for removing material from a workpiece, as well as a method for making the same, that includes a ceramic substrate with a rake surface and at least one flank surface wherein a cutting edge is at the juncture therebetween. A wear-resistant coating scheme that includes an alumina-containing base coating layer region, which has at least one exposed alumina coating layer, deposited by chemical vapor deposition on the substantially all of the surfaces of the ceramic substrate that experience wear during removal of material from the workpiece. The exposed alumina coating layer exhibits a blasted stress condition ranging between about 50 MPa (tensile stress) and about ?2 GPa (compressive) as measured by XRD using the Psi tilt method and the (024) reflection of alumina. The exposed alumina coating layer is the result of wet blasting a titanium-containing outer coating layer region from the surface of the alumina-containing base coating layer region.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: October 21, 2014
    Assignee: Kennametal Inc.
    Inventors: Zhigang Ban, Alfred S. Gates, Jr., Yixiong Liu, Jie Wu
  • Patent number: 8853100
    Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Jun Sato, Kazuo Yabe, Hitoshi Kato, Yusaku Izawa
  • Patent number: 8828492
    Abstract: A method for making a coated article wherein the method includes the following steps: providing a substrate; and depositing an aluminum oxynitride coating layer from a gaseous mixture. The gaseous mixture contains the following components: 30.0-65.0 volume percent nitrogen, 0.7-1.3 volume percent aluminum tri-chloride; 1.0-2.0 volume percent ammonia, 0.1-1.5 carbon dioxide, 1.5-4.5 volume percent hydrogen chloride, optional components of carbon monoxide and/or argon, and hydrogen as the balance.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: September 9, 2014
    Assignee: Kennametal Inc.
    Inventors: Volkmar Sottke, Hartmut Westphal, Hendrikus Van Den Berg, Zhigang Ban, Yixiong Liu, Mark S. Greenfield
  • Patent number: 8828528
    Abstract: A barrier film includes a base which is formed of a plastic film having a first surface and a second surface opposed to the first surface, a first barrier layer which is formed on the first surface by an atomic layer deposition method and is made of an inorganic material having a water vapor barrier property; and a second barrier layer which is formed on the second surface by an atomic layer deposition method and is made of an inorganic material having a water vapor barrier property.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: September 9, 2014
    Assignee: Sony Corporation
    Inventors: Andrew Chakchung Yu, Hiroaki Ono, Takahiro Kawana
  • Publication number: 20140227512
    Abstract: The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The invention is particularly useful for applying an anti-iridescent coating to glass in an online float glass process.
    Type: Application
    Filed: September 13, 2012
    Publication date: August 14, 2014
    Applicant: Arkema Inc.
    Inventors: Ryan C. Smith, Jeffery L. Stricker
  • Publication number: 20140199130
    Abstract: CVD coated cutting tools are provided. A coated cutting tool described herein, in some embodiments, comprises a PcBN substrate and a polished coating adhered to the substrate including one or more layers of Al2O3 deposited by chemical vapor deposition, wherein the coating has a surface roughness (Ra) less than about 600 nm in an area of the cutting tool for contacting a workpiece.
    Type: Application
    Filed: January 11, 2013
    Publication date: July 17, 2014
    Applicant: Kennametal Inc.
    Inventors: Frank Barry Battaglia, Crystal Jane Nestor, Peter Rudolf Leicht, Kent Lewis Reiner, Charles Graham McNerny
  • Publication number: 20140193622
    Abstract: Cutting tool insert has a substrate and a coating with a total thickness of 5 to 40 ?m, the coating being one or more refractory layers of which at least one layer is an ?-Al2O3 layer having thickness of 1 to 20 ?m. The length of ?3-type grain boundaries in the at least one ?-Al2O3 layer is more than 80% of the total length of the sum of grain boundaries of ?3, ?7, ?11, ?17, ?19, ?21, ?23 and ?29-type grain boundaries grain boundary character distribution measured by EBSD. The at least one ?-Al2O3 layer is deposited by chemical vapour deposition (CVD) using reaction gases comprising H2, CO2, AlCl3 and X and optional additions of N2 and Ar, with X being gaseous H2S, SO2, HF, SF6 or combinations thereof. The volume ratio of CO2 and X in the CVD reaction chamber lies within the range 2<CO2/X<10.
    Type: Application
    Filed: September 17, 2012
    Publication date: July 10, 2014
    Applicant: WALTER AG
    Inventors: Dirk Stiens, Sakari Ruppi
  • Patent number: 8765222
    Abstract: The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0?A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0?x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1?0.5 A2.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: July 1, 2014
    Assignee: Dowa Electronics Materials Co., Ltd.
    Inventors: Yoshikazu Ooshika, Tetsuya Matsuura
  • Patent number: 8747947
    Abstract: Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: June 10, 2014
    Assignee: Empire Technology Development, LLC
    Inventor: Seth Miller
  • Publication number: 20140102599
    Abstract: A method of coating all surfaces of a plurality of piston rings in a single run by a chemical vapor deposition (CVD) process is provided. The method can include providing a coil formed of an iron-based material; heating the coil; and depositing a coating on all surfaces of the coil during a single continuous period of time, without having to move the coil during the CVD process. The coil is maintained in a fixed position during the depositing step. The method next includes splitting the coil into a plurality of separate coated piston rings. Alternatively, the method can include providing a plurality of stacked keystone piston ring bodies; and disposing a cylinder around the stack to maintain the keystone piston ring bodies in position while depositing the CVD coating on all surfaces of the keystone piston ring bodies during the single coating run.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 17, 2014
    Applicant: Federal-Mogul Corporation
    Inventors: Robert Aharonov, Haron Gekonde
  • Patent number: 8668957
    Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: March 11, 2014
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Publication number: 20140065368
    Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: UT-BATTELLE, LLC
    Inventors: Tolga AYTUG, Mariappan Parans PARANTHAMAN, John T. SIMPSON, Daniela Florentina BOGORIN
  • Publication number: 20130333835
    Abstract: Hybrid inorganic-organic, polymeric alloys are prepared by combining atomic layer deposition and molecular layer deposition techniques provide barrier protection against intrusion of atmospheric gases such as oxygen and water vapor. The alloy may be formed either directly on objects to be protected, or on a carrier substrate to form a barrier structure that subsequently may be employed to protect an object. The alloy thus formed is beneficially employed in constructing electronic devices such as photovoltaic cell arrays, organic light-emitting devices, and other optoelectronic devices.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Peter Francis Carcia, Robert Scott Mclean
  • Patent number: 8603582
    Abstract: Non-stick fixtures for selectively masking portions of a workpiece during application of a workpiece coating are described herein. These fixtures have predetermined surfaces thereon having an average surface roughness of about 25 Ra or less and a Rockwell hardness of about 65 Rc or more. The controlled average surface roughness ensures that these fixtures are non-stick with respect to the workpiece coating being applied to the workpieces disposed therein. The controlled Rockwell hardness ensures that the desired average surface roughness can be maintained throughout repeated use of the fixture in harsh coating environments. These fixtures reduce the workpiece coating bridging that occurs between the fixture and the workpiece, and also reduce the amount of overspray that occurs on the workpiece, thereby minimizing the amount of handwork and/or rework that is necessary after the workpiece is coated. This improves process cycle times and yields significantly.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: December 10, 2013
    Assignee: United Technologies Corporation
    Inventors: Ryan Richard Bernaski, Bartolomeo Palmieri
  • Publication number: 20130302521
    Abstract: A coated article such as a coated cutting tool or coated wear part, which includes a substrate and a coating scheme on the substrate. The coating scheme has a titanium-containing coating layer, and an aluminum oxynitride coating layer on the titanium-containing coating layer. The aluminum oxynitride includes a mixture of phases having a hexagonal aluminum nitride type structure (space group: P63mc), a cubic aluminum nitride type structure (space group: Fm-3m), and optionally amorphous structure. The aluminum oxynitride coating layer has a composition of aluminum in an amount between about 20 atomic percent and about 50 atomic percent, nitrogen in an amount between about 40 atomic percent and about 70 atomic percent, and oxygen in an amount between about 1 atomic percent and about 20 atomic percent.
    Type: Application
    Filed: June 3, 2013
    Publication date: November 14, 2013
    Applicant: Kennametal Inc.
    Inventors: Volkmar Sottke, Hartmut Westphal, Hendrikus Van Den Berg, Zhigang Ban, Yixiong Liu, Mark S. Greenfield
  • Publication number: 20130260035
    Abstract: A coated ceramic cutting insert for removing material from a workpiece, as well as a method for making the same, that includes a ceramic substrate with a rake surface and at least one flank surface wherein a cutting edge is at the juncture therebetween. A wear-resistant coating scheme that includes an alumina-containing base coating layer region, which has at least one exposed alumina coating layer, deposited by chemical vapor deposition on the substantially all of the surfaces of the ceramic substrate that experience wear during removal of material from the workpiece. The exposed alumina coating layer exhibits a blasted stress condition ranging between about 50 MPa (tensile stress) and about ?2 GPa (compressive) as measured by XRD using the Psi tilt method and the (024) reflection of alumina. The exposed alumina coating layer is the result of wet blasting a titanium-containing outer coating layer region from the surface of the alumina-containing base coating layer region.
    Type: Application
    Filed: June 3, 2013
    Publication date: October 3, 2013
    Inventors: Zhigang Ban, Alfred S. Gates, JR., Yixiong Liu, Jie Wu
  • Patent number: 8546270
    Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 1, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Hyun Kim, Ki-Vin Im, Hoon-Sang Choi, Moon-Hyeong Han
  • Patent number: 8512807
    Abstract: A method of making cutting tool inserts with high demands on dimensional accuracy includes: mixing by milling of powders forming hard constituents and binder phase, forming the powder mixture to bodies of desired shape, sintering the formed bodies, grinding with high accuracy the sintered bodies to inserts with desired shape and dimension, optionally edge rounding of cutting edges, and providing the ground inserts with a wear resistant non-diamond or non-diamond-like coating. According to the method, the ground inserts are heat treated prior to the coating operation in an inert atmosphere or vacuum or other protective atmosphere below the solidus of the binder phase for such a time that the micro structure of the surface region is restructured without causing significant dimensional changes. In this way inserts with unexpected improvement of tool life and dimensional accuracy have been achieved.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: August 20, 2013
    Assignee: Seco Tools AB
    Inventors: Bo Jansson, Jacob Sjolen
  • Publication number: 20130209780
    Abstract: The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.
    Type: Application
    Filed: August 25, 2011
    Publication date: August 15, 2013
    Applicant: RENSSELAER POLYTECHNIC INSTITUTE
    Inventors: David J. Poxson, Frank W. Mont, E. Fred Schubert, Richard W. Siegel
  • Patent number: 8501266
    Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: August 6, 2013
    Assignee: Rohm and Haas Electronics Materials LLC
    Inventors: Egbert Woelk, Ronald L. DiCarlo, Jr.
  • Patent number: 8496995
    Abstract: Encapsulated switches are disclosed which substitute non-toxic gallium alloy for mercury. In one embodiment, wetting of the interior surfaces of the housing is prevented by coating the surfaces with an electrically insulative inorganic non-metallic material, such as alumina or boron nitrate. According to another embodiment, a perfluorocarbon liquid is employed as the anti-wetting agent.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: July 30, 2013
    Assignee: Thermo Fisher Scientific, Inc.
    Inventors: Marcos Hernandez, Carl Rosenblatt
  • Patent number: 8481122
    Abstract: ALD-type methods which include providing two or more different precursors within a chamber at different and substantially non-overlapping times relative to one another to form a material, and thereafter exposing the material to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: July 9, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Chris M. Carlson, Vishwanath Bhat, F. Daniel Gealy
  • Publication number: 20130171442
    Abstract: A method for modifying a porous substrate, including: coating a metal hydroxide layer on a porous substrate; and calcining the porous substrate with the metal hydroxide layer coated thereon to transform the metal hydroxide layer into a continuous metal oxide layer, forming a modified porous substrate. The disclosure also provides a modified porous substrate.
    Type: Application
    Filed: July 25, 2012
    Publication date: July 4, 2013
    Inventors: Meng-Chang LIN, Yu-Li Lin, Yen-Hsun Chi, Jun-Yen Uan
  • Patent number: 8470402
    Abstract: Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: June 25, 2013
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Publication number: 20130149527
    Abstract: Provided is a coating layer for cutting tools, as a hard coating layer stacked and formed in the sequence of a TiN layer, a TiCN layer, a bonding layer, an alumina (Al2O3) layer, and a cover layer from the bottom by using a chemical vapor deposition (CVD) method on a parent material, able to improve cutting performance, because surface residual stress of the coating layer may be maintained in a compressive stress state by adjusting a composition of the cover layer without using a separate additional process, such as a blasting operation, or a mixed process of CVD and physical vapor deposition (PVD), and simultaneously the cover layer may also be used as a wear-resistant layer.
    Type: Application
    Filed: July 8, 2011
    Publication date: June 13, 2013
    Applicant: Korloy Inc.
    Inventors: Seong Woo Cho, Han Sung Kim, Dong youl Lee, Dae Suk Han, Young Ho Seo, Seoun Young Ahn, Dong Bok Park
  • Patent number: 8399056
    Abstract: A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0?a<1, 01 and M2 being metals Hf, Zr or Ti using precursors with pentadienyl ligands and/or cyclopentadienyl ligands.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: March 19, 2013
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Nicolas Blasco, Christian Dussarrat
  • Patent number: 8372684
    Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: February 12, 2013
    Assignee: Stion Corporation
    Inventors: Robert D. Wieting, Steven Aragon, Chester A. Farris, III
  • Publication number: 20130029095
    Abstract: A coated article includes a substrate, a color layer formed on the substrate and a ceramic layer deposited on the color layer. The color layer substantially includes metal Zn and O. The ceramic layer substantially includes substance M, O, and N, wherein M is Al or Si.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 31, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: WEN-RONG CHEN, HUANN-WU CHIANG, CHENG-SHI CHEN, CONG LI
  • Publication number: 20130029094
    Abstract: A coated article includes a substrate, a first layer formed on the substrate, and a second layer deposited on the first layer. The substrate comprises a first outer surface. The substrate defines a plurality of first convexes in the first outer surface. The first layer comprises a second outer surface away from the first outer surface. The second outer surface of the first layer defines a plurality of second convexes corresponding to the first convexes in the position. The second layer substantially includes substance M, O, and N, wherein M is Al or Si.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 31, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: HSIN-PEI CHANG, CHENG-SHI CHEN, CONG LI
  • Publication number: 20130029096
    Abstract: A coated article includes a substrate, a first ceramic layer deposited on the substrate, a color layer deposited on the first ceramic layer, and a second ceramic layer deposited on the color layer. The first ceramic layer substantially includes substance M, elemental O and elemental N, wherein M is Al or Si. The color layer substantially includes metal M?, O and elemental N, wherein M? is elemental Al or Zn. The second ceramic layer substantially includes substance M, elemental O and elemental N, wherein M is Al or Si.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 31, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: HSIN-PEI CHANG, HUANN-WU CHIANG, CHENG-SHI CHEN, CONG LI
  • Patent number: 8343591
    Abstract: A method for use with a coating process includes depositing a ceramic coating on a substrate within a coating chamber. Prior to depositing the ceramic coating, an electron beam source is used to heat a ceramic material. The ceramic material radiates heat to heat a substrate to an oxidation temperature to form an oxide layer on the substrate. A desired evaporation rate of the ceramic material is established during the heating to thereby provide an improved ceramic coating.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: January 1, 2013
    Assignee: United Technologies Corporation
    Inventors: James W Neal, Michael J. Maloney, David A. Litton, Christopher Masucci
  • Patent number: 8337945
    Abstract: A method for producing an element including a substrate having a plurality of nanocylinders deposited thereon includes providing the substrate. The substrate is covered with a nanoporous Al2O3 membrane so as to provide a covered substrate. The covered substrate is alternately vapor-deposited, at a vapor-deposition temperatures from 250° C. to 400° C., with atoms of a magnetic element and atoms of a non-magnetic element so as to provide the plurality of nanocylinders. Each nanocylinder includes at least four superposed layers including, alternatively, the atoms of the magnetic element and the atoms of the non-magnetic element. The nanoporous Al2O3 membrane is then removed so that the nanocylinders remain on the substrate.
    Type: Grant
    Filed: April 28, 2007
    Date of Patent: December 25, 2012
    Assignee: Forschungszentrum Karlsruhe GmbH
    Inventors: Jens Ellrich, Lei Yong, Horst Hahn
  • Publication number: 20120315468
    Abstract: A coated article is provided. A coated article includes a substrate, a ceramic layer deposited on the substrate by vacuum plating, and a color layer deposited on the ceramic layer. The ceramic layer substantially includes substance M, elemental O and elemental N, wherein the M is Al or Si. The color layer substantially includes metal M?, elemental O and elemental N, wherein the M? is Al or Zn.
    Type: Application
    Filed: September 21, 2011
    Publication date: December 13, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD
    Inventors: HUANN-WU CHIANG, CHENG-SHI CHEN, CONG LI
  • Patent number: 8329253
    Abstract: A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: December 11, 2012
    Assignee: National Taiwan University
    Inventors: Feng-Yu Tsai, Chun-Ting Chou
  • Patent number: 8318251
    Abstract: A method and composition are provided for coating honeycomb seals and, more specifically, to a method and slurry for applying an aluminide coating onto honeycomb seals. The method includes preparing a slurry of a powder containing a metallic aluminum alloy having a melting temperature higher than aluminum, an activator capable of forming a reactive halide vapor with the metallic aluminum, and a binder containing an organic polymer. The slurry is applied to surfaces of the honeycomb seal, which is then heated to remove or burn off the binder, vaporize and react the activator with the metallic aluminum to form the halide vapor, react the halide vapor at the substrate surfaces to deposit aluminum on the surfaces of the seal, and diffuse the deposited aluminum into the surfaces to form a diffusion aluminide coating.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: November 27, 2012
    Assignee: General Electric Company
    Inventors: Dennis William Cavanaugh, Vinod P. Pareek, Nuo Sheng, Surinder Pabla, Daniel J. Dorriety
  • Patent number: 8278140
    Abstract: A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: October 2, 2012
    Assignee: National Tsing Hua University
    Inventors: Ya-Hui Yang, Sueli Sidney Yang, Chen-Yu Kao, Kan-San Chou, Sinn-Wen Chen
  • Publication number: 20120207948
    Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
    Type: Application
    Filed: February 9, 2012
    Publication date: August 16, 2012
    Applicant: SYNOS TECHNOLOGY, INC.
    Inventor: Sang In LEE
  • Publication number: 20120171376
    Abstract: A method of depositing a conformal coating on a porous non-ceramic substrate requires reactive gases to flow through the substrate so as to leave a conformal coating behind. The process can be used to leave a hydrophilic surface on the interior pores of the substrate, even when the substrate is of a naturally hydrophobic, e.g., olefinic material. The method can be used in a roll-to-roll process, or in a batch process. In some convenient embodiments of the latter case, the batch reactor and the conformally coated substrate or substrates can together go on to be come part of the end product, e.g., a filter body and the filter elements respectively.
    Type: Application
    Filed: September 15, 2010
    Publication date: July 5, 2012
    Inventor: Bill H. Dodge
  • Publication number: 20120107586
    Abstract: A barrier film includes a base which is formed of a plastic film having a first surface and a second surface opposed to the first surface, a first barrier layer which is formed on the first surface by an atomic layer deposition method and is made of an inorganic material having a water vapor barrier property; and a second barrier layer which is formed on the second surface by an atomic layer deposition method and is made of an inorganic material having a water vapor barrier property.
    Type: Application
    Filed: October 12, 2011
    Publication date: May 3, 2012
    Applicant: SONY CORPORATION
    Inventors: Andrew Chakchung Yu, Hiroaki Ono, Takahiro Kawana
  • Patent number: 8163343
    Abstract: Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate.
    Type: Grant
    Filed: September 3, 2008
    Date of Patent: April 24, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Shreyas S. Kher, Christopher S. Olsen, Lucien Date