Abstract: A capacitive plasma discharge system employing multiple feeds of RF source power across an area of an electrode. Multiple RF feed locations across the electrode allow for control of the axial electric field across a radius at various azimuth angles of a plasma processing chamber. In an embodiment, a first RF power feed is coupled to a center of an electrode of the capacitively coupled chamber. The first RF power feed is further coupled to a first RF match network. A second RF power feed is coupled to the electrode at a first radius from the first RF power feed and at a first azimuth angle. The second RF power feed is further coupled to a second RF match network.

Abstract: An apparatus for plasma treatment of a non-conductive hollow substrate, including a plurality of ionization energy sources disposed adjacent to each other all along the part of the substrate to be treated. The apparatus also includes a processor to sequentially power the plurality of ionization energy sources from a radio frequency power source. Each ionization energy source includes two parts sandwiching the substrate. The ionization energy sources can be capacitively or inductively coupled plasma sources.

Abstract: A method for deposition of titania, and titania-containing, thin films by CVD, using an atmospheric pressure glow discharge plasma as a major source of reaction, which leads to film properties, and film growth rates, normally only achievable (by atmospheric pressure CVD) with significantly higher substrate temperatures.

Abstract: An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 ?sec or more and 5.0 ?sec or less is applied to the counter electrode.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A method for forming a film of material using chemical vapor deposition. The method includes providing a substrate comprising a pattern of at least one metallic nanostructure, which is made of a selected material. The method includes determining a plasmon resonant frequency of the selected material of the nanostructure and exciting a portion of the selected material using an electromagnetic source having a predetermined frequency at the plasmon resonant frequency to cause an increase in thermal energy of the selected material. The method includes applying one or more chemical precursors overlying the substrate including the selected material excited at the plasmon resonant frequency and causing selective deposition of a film overlying at least the portion of the selected material.

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract: Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

Abstract: Vacuum treatment installation or vacuum treatment method for carrying out a plasma method, wherein the treatment is carried out in a vacuum chamber, in which are disposed a device for generating an electric low voltage arc discharge (NVBE) comprised of a cathode and an anode electrically interconnectable with the cathode via an arc generator, and a workpiece carrier electrically interconnectable with a bias generator for receiving and moving workpieces, as well as at least one feed for inert and/or reactive gas. At least a portion of the surface of the anode is therein fabricated of graphite and is operated at high temperature.

Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

Abstract: Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

Abstract: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution.

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage.

Abstract: A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region.

Abstract: The method is intended for obtaining nanosize amorphous particles, which find use in various fields of science and technology; in particular, metallic nanostructures can be regarded as a promising material for creating new sensors and electronic and optoelectronic devices and for developing new types of highly selective solid catalysts. The method for obtaining nanoparticles includes the following stages: dispersion of a molten material; supply of the resulting liquid drops of this material into a plasma with parameters satisfying the aforementioned relationships, which is formed in an inert gas at a pressure of 10?414 10?1 Pa; cooling of liquid nanoparticles formed in the said plasma to their hardening; and deposition of the resulting solid nanoparticles onto a support.

Abstract: A method for depositing a film of an advanced material on a surface of an article is disclosed. The method comprises placing the article within a bath having a pair of spaced electrodes one of which is formed by the article and an electrolyte containing a source of the material to be deposited. A stream of bubbles is generated within the electrolyte adjacent to the cathode. A potential difference is applied across the cathode and anode such that a plasma glow discharge is formed in the bubble region. The plasma of ionised gaseous molecules formed within the bubble region acts to deposit a film of material on the surface of the article. The method may be carried out at atmospheric pressure and does not require a vacuum apparatus. An apparatus for carrying out this method is also disclosed.

Abstract: The invention provides a method for plasma coating of optical lenses, particularly lenses made of silicone-containing polymer. The method of the invention comprising selectively depressurizing and pressurizing an entry hold chamber and an exit hold chamber while constantly maintaining a plasma gas in a coating chamber at a process pressure without depressurizing and pressurizing repeatedly the coating chamber, wherein the coating chamber is located between the entry hold chamber and the exit hold chamber.

Abstract: Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Abstract: In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.

Abstract: A method is provided for making vehicle trim components that have a layer(s) including chromium (Cr), in metallic, oxide, nitride, and/or carbide form. In certain embodiments, a Cr inclusive gas is used in conjunction with a vapor deposition apparatus (e.g., PECVD apparatus) in order to form a Cr inclusive layer on a substrate. In certain example embodiments, the substrate may be provided with a conductive layer thereon, and may be electrically biased in the deposition chamber. The Cr inclusive layer may be at least partially amorphous in certain example embodiments.

Abstract: One aspect of the present invention relates to a system and method for mitigating LER as it may occur on short wavelength photoresists. The method involves forming a short wavelength photoresist over a substrate having at least one dielectric layer formed thereon, exposing the photoresist to a plasma selective to the photoresist to strengthen the photoresist without substantially etching the at least one dielectric layer, the plasma comprising hydrogen, helium and argon, and etching the dielectric layer through openings of the strengthened photoresist with an etchant selective to the at least one dielectric layer, whereby the treated photoresist is substantially resistant to etching effects of the etchant. The system includes a photoresist monitor system for monitoring the plasma treatment to determine whether the photoresist has been strengthened and for adjusting parameters associated with the plasma treatment and for providing feedback to the plasma treatment system.

Abstract: A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.

Abstract: A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.

Abstract: A poled polymer material is formed on the surface of a substrate by poling a nonlinear optical reactant during a plasma polymerizing deposition of the reactant onto the surface. The substrate is fixed between the positive plasma-generating and ground electrodes in an air-evacuated chamber so that the substrate electrically floats relative to the electrodes. This arrangement permits the application of an electrostatic poling field to the depositing polymer material while the plasma excitation power is maintained. The electrostatic poling field is produced by the application of a dc voltage to poling electrodes that can be arranged in various configurations relative to the substrate.

Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

Abstract: Method of thin film deposition especially in reactive conditions. Optical coatings with negligible optical absorption, of high quality and low cost even on unheated substrates are deposited using an RF/pulsed DC plasma RF/pulsed DC bias generates a plasma in front of the substrate. This plasma allows obtaining the right stoichiometry of the deposited film by increasing the reactivity of the reactive gas present in the plasma and, in addition, introduces an energetic ion bombardment of the substrate before and during the growth of the film which improves the adherence and the deposit compactness.

Abstract: A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes.

Abstract: An integrated nucleation and bulk deposition process is disclosed for forming a CVD metal film over a semiconductor substrate that has structures formed thereon. In the integrated deposition process of the present invention, nucleation seed deposition and bulk deposition are performed in an integrated and contemporaneous manner. In one embodiment, a reactant gas and a reducing agent gas flow into a pressurized reaction chamber. As the integrated deposition process progresses, pressure and flow of reactant gas are increased while flow of reducing agent gas is decreased. The integrated deposition process of the present invention gives a significant decrease in process time as compared to prior art processes. Moreover, the integrated deposition process of the present invention gives good fill characteristics while providing sufficient protection to underlying structures.

Abstract: A vacuum processing method comprises placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers admitted into the reaction container from the high-frequency electrode so as to process the article to be processed. In the method, at least the high-frequency power having a frequency f1 and the high-frequency power having a frequency f2 are used and satisfy the following two conditions as the high-frequency powers: 250 MHz≧f1>f2≧10 MHz 0.9≧f2/f1≧0.1.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A method for treating substrates including the steps of: providing a substrate; exposing said substrate to a plasma glow discharge in the presence of a fluorocarbon gas; maintaining said gas at a pressure between about 50 mTorr and about 400 mTorr; generating said plasma as a modulated glow discharge; pulsing said discharge at an on time of 1-500 milliseconds; pulsing said glow at an off time of 1-1000 milliseconds; maintaining said plasma glow discharge at a power density of 0.02-10 watts/cm2; and applying a hydrophobic coating to said substrate.

Abstract: An apparatus for coating a substrate with a diamond like coating or other vacuum depositable material comprises a chamber 11 having, or acting as, an anode, means for supporting a substrate 15 in the chamber, means for establishing a low pressure atmosphere containing a hydrocarbon-based gas in the chamber, and a radio frequency source 12 for establishing a gas plasma in the chamber, the substrate 15 acting as a cathode.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

Abstract: A cream for use as a topping on beverages, such that the cream floats on the surface of the beverage, whether hot or cold. The cream contains a hydrocolloid fluid gelling agent at a concentration sufficient to form a fluid gel which is subsequently sheared. This enables the cream to float on beverages, whilst maintaining its inherent stability and remaining immiscible with other liquids whether hot or cold. Usually the gelling agent has a concentration between 0.05 and 2% by weight.

Abstract: A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plurality of plasma sources includes a cathode, an anode, and an inlet for a non-reactive plasma source gas disposed in a plasma chamber, and a common reactant gas injector disposed in a deposition chamber that contains the substrate. The common reactant gas injector provides a uniform flow of at least one reactant gas to each of the multiple plasmas generated the multiple plasma sources through a single delivery system. The at least one reactant gas reacts with the plurality of plasmas to form a uniform coating on a substrate.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: In general, the present invention is directed to acoustically enhanced deposition processes, and a system for performing same. In one embodiment, the method comprises providing a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and actuating at least one acoustic generator to generate sound waves during the deposition process. In one illustrative embodiment, the system comprises a deposition tool for receiving a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, and performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and at least one acoustic generator coupled to the deposition tool to generate sound waves during the deposition process.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition processes are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: In a method for manipulating particles arranged in a plasma-cristalline state in a plasma of a carrier gas, the particles are at least partially subject to plasma treatment and/or applied to a substrate surface. A device for manipulating of particles in plasma-cristalline state includes a reaction vessel, in which plasma electrodes and at least one substrate are situated. An adaptive electrode for formation of a location selective low frequency or static electrical field in the reaction vessel is described.

Abstract: When performing film deposition on the surface of a wafer, a turntable supporting the wafer is first rotated. Next, a fluid containing an organic metal is applied onto the wafer via the tip of a nozzle. At the same time, an ultrasound wave is generated by an ultrasound wave generating device, and the turntable is vibrated. Thus the vibrations from the turntable are applied to the wafer, these wafer vibrations allow the fluid containing an organic metal to thoroughly permeate into the detailed patterning of the wafer surface, and said fluid covers its entirety. As a result, film deposition with excellent filling-in characteristics becomes possible.

Abstract: Photoinitiator combinations comprising at least one compound of formula (I)  wherein R1 is C1-C4alkyl, C1-C4alkoxy or halogen; R2 is hydrogen, C1-C4alkyl, C1-C4alkoxy or halogen; R3 is, for example, C1-C20alkyl, cyclopentyl, cyclohexyl, phenyl-C1-C4alkyl, naphthyl or biphenylyl or an O-, S- or N-containing 5- or 6-membered heterocyclic ring; and at least one compound of formula (II)  wherein R1 and R2 are as defined above; R9 is, for example, C1-C20alkyl, cyclopentyl, cyclohexyl, phenyl-C1-C4alkyl, naphthyl, biphenylyl or an O-, S- or N-containing 5- or 6-membered heterocyclic ring; and R10 is, for example, C1-C20alkyl, C2-C20alkyl interrupted by one or more O atoms, cyclopentyl, cyclohexyl, phenyl-C1-C4alkyl, naphthyl, biphenylyl or an O-, S- or N-containing 5- or 6-membered heterocyclic ring; are reactive photohardeners causing only a low degree of yellowing in the cured substrates.

Abstract: The present invention provides a method for manufacturing a magnetic recording medium comprising the steps of forming a carbon protective film onto a disc, the non-magnetic substrate of which is layered with a non-magnetic base film and magnetic film, using a reactant gas containing carbon atoms as a starting material, according to a plasma CVD method, wherein a mixed gas of hydrocarbon and hydrogen, in which the mixing ratio of hydrocarbon to hydrogen is in the range of 2 to 1˜1 to 100 by volume, is used as a reactant gas, during bias applying to said disc. In addition, the present invention provides a magnetic recording medium comprising a carbon protective film formed onto a disc, the non-magnetic substrate of which is layered with a non-magnetic base film and magnetic film, wherein said carbon protective film is formed according to a plasma CVD method, while applying bias.

Abstract: A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal into a chamber in which the substrate is disposed; (b) injecting a stream of reactive gas into the chamber to impinge upon the stream of metal vapor clusters and exothermically react therewith to produce substantially nanometer-sized metal compound or ceramic clusters; (c) operating heat treatment devices to heat treat the metal compound or ceramic clusters so that a non-zero proportion of the clusters is in a solid state when impinging upon the substrate; and (d) directing the metal compound or ceramic clusters to impinge and deposit onto the substrate for forming the nano-porous coating.

Abstract: The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber.

Abstract: A method of making rhodium (Rh) lead layers for a read sensor comprises a first step of obliquely ion beam sputtering the rhodium (Rh) lead layer followed by a second step of annealing. This method results in rhodium (Rh) lead layers which have reduced stress and less resistance, making them highly desirable for lead layers of a sensor in a read head.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A method for surface modification of 3-dimensional bulk polymers is provided to improve surface properties and surface conductivity of 3-dimensional bulk polymers by using plasma source ion implantation technique. The plasma source ion implantation technique is to modify the surface by implanting ions into the surface of the 3-dimensional samples uniformly. When negative high voltage pulse is applied to a metallic grid around the bulk polymer samples, ions are extracted from the plasma; most of ions passing the grid and collide with the surface of the bulk polymer samples in high energy. Therefore, through the method for applying high voltage pulse to the grid around samples, ions are implanted into the surface of the 3-dimensional bulk polymer samples uniformly, and thereby the ions implanted in high energy modify the bulk polymer surface to improve the electrical conductivity effectively.