Abstract: A method for improving the paintability of a shaped object of which at least the outer portion is made of a polyamide/polyolefin alloy, wherein an electrical discharge is made to act on a gas in order to create a cold plasma type reactive gas stream, and the shaped object is brought into contact with the reactive gas stream thereby produced and with an oxygen source in order to oxidize the surface of the shaped object. The method is particularly useful for treating trim for motor vehicles as well as items of garden furniture prior to painting.

Abstract: High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

Abstract: An object (30) is plasma processed by placing an electrically conducting grid (34) over all or a portion of the surface (32) of the object (30) so that the grid (34) generally follows the contours of the surface (32) but is displaced outwardly from the surface (32). Ions or electrons from a plasma surrounding the object (30) are accelerated into the surface (32) of the object (30) using as a processing driving force an electrical potential applied to the electrically conducting grid (34). The use of a contoured conducting grid (34) allows plasma processing of large, electrically nonconducting objects and objects having sharp surface features or recesses.

Abstract: This invention describes an environmentally and occupationally safer method and apparatus for coating and/or reclaiming materials in low pressure inert atmospheres. This invention is useful for coating a large number of irregularly shaped articles, such as industrial fasteners, tools and the like, with metals, semiconductor materials, composites, or alloys. The process related to this invention is also useful for coating parts in a rack or barrel type coating apparatus, as well as the continuous coating of parts which are fed through the path of material vapor streams. The processes and apparatus disclosed use sublimation techniques which allow almost unrestricted size, shape and placement of the depositing source. Heating sources serve to sublimate materials which can then be directed to the desired substrate for condensing.

Abstract: An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Abstract: The present invention relates to the formation of a class of nanocomposite amorphous materials consisting of interpenetrating random networks of predominantly sp3 bonded carbon stabilized by hydrogen, glass-like silicon stabilized by oxygen and random networks of elements from the 1-7b and 8 groups of the periodic table. The materials have high strength and microhardness, flexibility, low coefficient of friction and high thermal and chemical stability. Nanocomposites containing networks of metallic elements can have conductivity variable from insulating dielectric to metallic. The materials have a wide range of applications as protective coatings and as electrically active materials. Metallic nanocomposites can exhibit superconductivity at low temperatures.

Abstract: The present invention relates to ion nitriding of pure titanium or titanium-containing alloys at low pressure by intensifying the glow discharge.Plasma intensification was produced by thermionic emission in conjunction with a triode glow discharge system. Effective ion nitriding can be achieved by employing the present invention at relatively low temperatures (480.degree. C.) and with significantly enhanced compound layer growth kinetics compared to the conventional nitriding techniques. Processed Ti and Ti-6Al-4V developed a surface layer of TiN followed by a Ti.sub.2 N layer and an interstitial nitrogen diffusion zone. Processed specimens showed a three fold increase in surface hardness. Surface roughness was found to be a function of the degree of plasma intensification. Processing of Ti-6Al-4V resulted in a higher wear, corrosion and wear-corrosion resistance.

Abstract: The first fire voltage of chalcogenide-based switching devices is lowered to a value approximately equal to the threshold voltage by treatment of the chalcogenide material with fluorine either during or after deposition.

Abstract: Oxide-free metallic, alloy or intermetallic compound formed by coating a powder of at least one member selected from the group consisting of elemental metallic, alloy and intermetallic compound with an oxide-replacing metal. The oxide-free compound may be compacted without the addition of a liquid sintering agent and at temperatures below the melting point of the compound, under sufficient pressure to form a uniform, consolidated intermetallic body.

Abstract: There can be provided a novel and useful process for the synthesis of hard boron nitride consisting essentially of single phase cubic boron nitride by a gaseous phase synthesis technique, which comprises adding a F atom-containing gas to the gaseous phase or adding a F atom-containing gas and H atom-containing gas to the gaseous phase, whereby the codeposited hexagonal boron nitride can selectively be etched and hard boron nitride of substantially single phase can finally be synthesized.

Abstract: Provided is a plasma processing apparatus and method which has a plasma generating chamber into which gas is introduced and microwaves are transmitted, thereby generating plasma. The plasma is introduced into a processing chamber, in which a semiconductor substrate to be processed resides. An RF generator and DC generator are mixed together and are synchronized with the microwaves, such that they are applied to the substrate at the same times the microwaves act upon the gas to form plasma. Thus, variance of the DC bias and RF bias can be independently controlled, and damage to the substrate is reduced. In another embodiment, an RF bias voltage modulation circuit is used to shape the RF waveform in accordance with predetermined patterns.

Abstract: A process and an apparatus for economically igniting microwave plasmas wherein no undesirable reaction products in the reaction chamber impair the quality of cladding produced thereby. The plasma is ignited on the gas outlet side of the reaction chamber by means of a high voltage that is applied at least for a short period of time. High-frequency pulses or low-frequency high voltages with frequencies in the range from 10 to 100 kHz are utilized. The high voltage is synchronized with the microwave pulses. According to a further process, the microwave pulses are excessively increased for a short time at least at their beginning. Also periodic excessive increases of the microwave pulses are possible A switchable high-voltage source is connected by way of a delay member and a current supply unit to the microwave device The output of the switchable high-voltage source is applied to the gas discharge line of the reaction chamber.

Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

Abstract: A method of forming a boron nitride containing film on a substrate is disclosed. The method includes disposing a substrate in a reaction chamber, inputting a reactive gas comprising boron and nitrogen into the reaction chamber, exciting the reactive gas in the reaction chamber by applying a DC biased, RF electric field thereto in the presence of a magnetic field, and depositing the boron nitride containing film on the substrate.

Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.

Abstract: The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.

Abstract: A method for the low temperature, microwave enhanced, chemical vacuum deposition of thin film material onto a surface of a hollow member by creating a sub-atmospheric pressure condition adjacent the surface to be coated while maintaining the applicator through which microwave energy is introduced at substantially atmospheric pressure.

Abstract: Transparent, refractory coatings and methods for their application to environmentally exposed substrates are disclosed. The coatings can be deposited over organic decorative materials, which generally prevent application of hard, protective, inorganic materials due to emission of exudates and vulnerability to excessive heat. The coatings are applied using plasma-enhanced chemical-vapor deposition techniques that reduce reaction temperatures and produce multilayer structures that seal organic exudates before a final layer of coating is applied, such multilayer protective coating structures being particularly suitable for protecting automobile bodies and the like against degrading external forces.

Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.

Abstract: A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

Abstract: A microwave plasma generating apparatus for generating plasma by radiating microwave into a space in which electric discharge takes place contains a plurality of microwave radiating means for radiating a plurality of microwaves having different directions of electric fields from each other. This microwave plasma generating apparatus can produce a diamond thin film by exciting a carbon source gas supplied into the space and bringing the excited gas into contact with a substrate to be formed thereon with the diamond thin film, the substrate being disposed in the space in which the electric discharge is performed. This apparatus can produce a large volume of plasma in a stable fashion and, as a result, provide a diamond thin film in a large area as a whole.

Abstract: A self-supporting sheet-like structure comprises a coating, which reduces sliding friction, on at least one surface of the substrate. The slip-improving coating is produced by treating this substrate surface by means of an electric corona discharge between a high voltage electrode and a grounded counter-electrode while simultaneously spraying an aerosol into the corona discharge zone. The aerosol contains a film-forming agent as a slip agent, for example aqueous solutions or emulsions of monoesters of glycerol and long-chain fatty acids.

Abstract: In continuous apparatus for the glow discharge deposition of amorphous silicon alloy solar cells of p-i-n-type configuration in a plurality of interconnected, dedicated deposition chambers, a plasma bar operatively disposed between at least the plasma regions in which the layer pairs of amorphous silicon alloy material defining the major semiconductor junction of the solar cell are deposited. The plasma bar is adapted to initiate a plasma so as to prevent chemically adsorbed contaminants from deleteriously affecting the surface of the first deposited of the layer pair, thereby improving the open circuit voltage of the solar cell. In a similar manner, the plasma bar may also be provided between the layer pairs of amorphous silicon alloy material which combine to define the minor semiconductor junction of the solar cell. Finally, a plasma bar may be disposed between the oxide-based layer of a back reflector for reducing oxygen contamination of the silicon alloy material deposited thereupon.

Abstract: A process for forming a functional deposited film which comprises: introducing a precursor composed mainly of Group IV elements to be constituents for a deposited film to be formed into a substantially enclosed film-forming space being kept at 0.1 to 50 mTorr into which hydrogen gas plasma is drawn in a sheet-like state and a substrate is positioned parallel to said sheet-like hydrogen gas plasma, and exhausting the gases in the film-forming space in the direction perpendicular to the sheet-like hydrogen gas plasma and the substrate, said precursor being generated in an precursor generation space situated separately from said film-forming space, said sheet-like hydrogen gas plasma being formed such that a distance (L) of 5 to 50 mm is established between the boundary thereof and the surface of the substrate, said precursor being introduced through gas feed means positioned substantially in said distance (L).

Abstract: A diamond-like carbon film is deposited on an insulating substrate using a solid carbon source evaporated by an electron beam so as to maintain the substrate temperature below about 150.degree. C. in a differentially evacuated chamber containing a selective etchant gas such as hydrogen. In orer to bombard the substrate with positively charged ions while preventing accumulation of a repulsive surface charge, a radio frequency (RF) electric field is applied to a rotating fixture holding the substrate. The differentially evacuated chamber maintains the atmospheric pressure around the solid carbon source at one end of the chamber at a sufficiently low pressure to prevent loss of electron beam energy and thereby enable vaporization of the carbon while maintaining the substrate at the other end of the chamber at a higher pressure which enables the RF electric field to excite an ion gas plasma around the substrate and thereby facilitate deposition of the diamond-like carbon film.

Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert.