Abstract: A method for forming a coating over a surface is disclosed. The method comprises depositing over a surface, a hybrid layer comprising a mixture of a polymeric material and a non-polymeric material. The hybrid layer may have a single phase or comprise multiple phases. The hybrid layer is formed by chemical vapor deposition using a single source of precursor material. The chemical vapor deposition process may be plasma-enhanced and may be performed using a reactant gas. The precursor material may be an organo-silicon compound, such as a siloxane. The hybrid layer may comprise various types of polymeric materials, such as silicone polymers, and various types of non-polymeric materials, such as silicon oxides. By varying the reaction conditions, the wt % ratio of polymeric material to non-polymeric material may be adjusted. The hybrid layer may have various characteristics suitable for use with organic light-emitting devices, such as optical transparency, impermeability, and/or flexibility.

Abstract: An atomic force microscopy (AFM) nanoprobe comprising a nanocone base and a nanoprobe tip wherein the length to base diameter aspect ratio is at least 3 or more. The AFM nanoprobe tip structure comprises an orientation-controlled (vertical or inclined), high-aspect-ratio nanocone structure without catalyst particles, with a tip radius of curvature of at most 20 nm.

Abstract: A combination of a thin-film ?c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of ?c-Si deposited the bottom metal layer; an i-layer of ?c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of ?c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: A method of manufacturing a thin film includes providing a metal organic precursor onto a substrate where the metal organic precursor is heated to a temperature of about 60° C. to about 95° C. and has a saturated vapor pressure of about 1 Torr to about 5 Torr. An oxidizing agent including oxygen for oxidizing the metal organic precursor is provided onto the substrate. The metal organic precursor and the oxidizing agent are chemically reacted to form the thin film including metal oxide. The thin film is easily available in a gate insulation layer of a gate structure, a dielectric layer of a capacitor, and similar circuit components.

Abstract: A low-resistivity, doped zinc oxide coated glass article is formed by providing a hot glass substrate having a surface on which a coating is to be deposited, the surface being at a temperature of at least 400° C. A zinc containing compound, an oxygen-containing compound and an aluminum- or gallium-containing compound are directed to the surface on which the coating is to be deposited. The zinc containing compound, oxygen-containing compound, and aluminum- or gallium-containing compound are mixed together for a sufficient time that an aluminum or gallium doped zinc oxide coating is formed on the surface at a deposition rate of greater than 5 nm/second.

Abstract: A thin film formation method is used for forming a thin film by providing a conductance valve on an exhaust path connecting a depressurizable processing chamber and a vacuum pump, arranging a processing object substrate inside the processing chamber, performing once or plural times a cycle including a first step of supplying a first reactive gas and a second step of supplying a second reactive gas into the processing chamber during a film formation processing period to cause a chemical reaction between the first reactive gas and the second reactive gas, and using the chemical reaction to form the thin film on the substrate.

Abstract: A process for radical assisted film deposition simultaneously on multiple wafer substrates is provided. The multiple wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant.

Abstract: Disclosed are substrates with a first hydrophobic layer having a first contact angle and a second hydrophobic layer having a second contact angle, the first hydrophobic layer between the second hydrophobic layer and the substrate, the first contact angle being greater than the second contact angle.

Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Abstract: The present invention provides a novel carbon-based material in which carbons different in property are combined in such a manner as to be applicable to a device. The carbon-based thin film provides a carbon-based thin film 10 including first phases 1 that contain amorphous carbon and extend in a film thickness direction, and a second phase 2 that contains a graphite structure and intervenes between the first phases 1. In the thin film, at least one selected from the group consisting of the following a) to e) is satisfied: a) the second phase contains more graphite structures per unit volume than the first phases; b) a density of the second phase is larger than that of the first phases; c) an electric resistivity of the second phase is lower than that of the first phases; d) an elastic modulus of the second phase is higher than that of the first phases; and e) in the second phase, a basal plane of the graphite structure is oriented along the film thickness direction.

Abstract: A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liquid-metal ion source as ions so as to give a gas blowing density of five to ten times greater than the case of deposition in the related art, with directionality of the gas blowing being both isotropic and symmetrical.

Abstract: A process for producing a coated substrate or a product having a coated substrate is provided. The process includes coating at least one metallic surface with a glass, the substrate being coated with an evaporation-coating glass at least on the metallic surface.

Abstract: A vacuum chamber has a housing within which a vacuum is sustained. Various processes may be performed and electronic circuits and elements may be supported in the vacuum chamber. The housing has walls with an interior surface that comprise crosslinked polystyrene. The vacuum chamber may have interior walls that have been machined, polished etched, chemically treated, thermally treated, electromagnetic energy treated. Circuitry, electrodes and electromagnetic processes can be performed within the vacuum chamber.

Abstract: A method is provided for coating optical lenses and other optical articles with anti-reflection (AR) coatings. The lenses have low reflectivity, provide a substantially white light reflection and have a low stress AR coating and are ideally suited for optical lenses made using a molding procedure which provides a low stress lens substrate. In one aspect the method uses special coating compositions with one being a high index of refraction composition and the other being a low index of refraction composition. In another aspect a method is also disclosed using an optical monitor in conjunction with a conventional vapor deposition apparatus whereby an optical reference lens is used and a particular light frequency of reflected light is measured and this measurement is then used to determine when the desired optical coating is achieved. In a still further aspect the method also preferably calculates the optical thickness of each layer using a specific ratio of blue to green to red colors in the reflected light.

Abstract: A thin film deposition method for producing an optical film with an optical characteristic on a deposition substrate in a vacuum chamber is provided. The method may include preparing in the vacuum chamber a deposition source which is a source of the film producing material; holding the deposition substrate with a substrate holding member; arranging the deposition substrate and the deposition source such that, given that a vertical distance from the center of the deposition substrate to the deposition source is defined as ZK and a horizontal distance between the deposition substrate and the deposition source as Xk, Xk/Zk is set to satisfy a following equation 0.48?Xk/Zk?0.78; rotating the deposition substrate on a rotational axis which is orthogonal to the deposition substrate; and evaporating the film producing material of the deposition source to perform deposition on the deposition substrate.

Abstract: A process for coating a non-uniform, thin-film, dichroic pattern to a wheel rim or motorcycle part. The thin-film coating adds a colored or iridescent pattern to the wheel rim or motorcycle part, while maintaining other characteristics, such as brilliance, shine, durability and general appearance. The coating is intentionally non-uniform. It may be varied, and may have different patterns and color among different articles, and even among different areas on the same article. The thin-film coating may be added by various techniques known in the art, but is preferably applied by sputtering a silicon or titanium target to obtain the thin-film on a chromed wheel rim.

Abstract: A method of manufacturing a thin-film magnetic head, the thin-film magnetic head including a magnetoresistive element, first and second shield layers for shielding the magnetoresistive element, a first shield gap film provided between the magnetoresistive element and the first shield layer, and a second shield gap film provided between the magnetoresistive element and the second shield layer. The method includes the steps of forming the first shield layer, forming the first shield gap film on the first shield layer, forming the magnetoresistive element on the first shield gap film, forming the second shield gap film on the magnetoresistive element, and forming the second shield layer on the second shield gap film. At least one of the first and second shield gap films is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

Abstract: Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, in a first chamber. The target particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec.

Abstract: An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

Abstract: A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input impedance to an impedance matching device (34) measured by an impedance sensor (42). An amplitude control circuit (44) controls a level of a high frequency electricity output by the second high frequency power source (51) based on an electricity (effective electricity) which is measured by a power sensor (40) and is to be supplied to the impedance matching device (34).

Abstract: A method for providing uniformity in plasma-assisted material processes. A shielding plate is implemented within a plasma chamber above a substrate. The dimensions, geometry, and location of the shielding plate are optimized to generate a desired ion flux in a plasma-assisted material process conducted in a plasma chamber.

Abstract: A vacuum deposition system has been designed to produce thin film based demultiplexers with high throughput and production yields of greater than 25% for use in Dense Wavelength Division Multiplexer (DWDM) systems. The system employs a dense array of high yield fixtures and an ion assisted movable dual electron beam evaporation system. The fixture array increases acceptable yields of narrow band pass filters to 25–75% compared to less than 5% in conventional coating systems used for DWDM. The movable e-beam system allows critical symmetry to be maintained while eliminating significant delays resulting from deposition of two materials from a single electron gun. The vacuum deposition system will enable production of more than 15,000 50–200 GHZ filters which meet specifications for DWDM demultiplexers every 48 hours.

Abstract: A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a container (first container 11a) to be set in an evaporation apparatus is employed and a material maker (18) stores an EL material (12), or refines it by sublimation and stores, directly in the container. The container is then transferred to a light emitting device maker (19) for evaporation. With a manufacturing system as such, impurities are prevented from contaminating a highly pure EL material. This system also eliminates the trouble of transferring an EL material from a glass jar to a container. The container may be recovered by the material maker and the EL material remaining in the container may be collected for reuse by the manufacturing system.

Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.

Abstract: A process for forming a thin film is described that enables automatic formation of thin films having constant optical properties reliably and in large quantities with excellent reproducibility suitable for mass production. An apparatus for performing the process is also described. Generally, a material for vapor deposition is vaporized by an electron gun and an antireflection film forms by vapor deposition on lenses held by a coat dome. The electric power applied to the electron gun is controlled so that the amount of transmitted or reflected light continuously measured by an optical film thickness meter during thin film formation is compared to a reference amount of measured light stored in a means for storing data until the measured and reference amounts of measured light are close to, or the same as, one another.

Abstract: A coated steel strip product with a dense and hard abrasion resistant coating on one side or both sides of said strip. The thickness of said coating is in total maximally 25 ?m, the hardness of said coating is at least 600 HV and the tensile strength of the steel strip substrate is at least 1200 MPa. The coating is preferably applied by electron beam evaporation and the coating may be, e.g., of Al2O3. The coated metal strip is useful for the manufacturing of doctor and coater blades for paper and printing industry.

Abstract: A coated steel strip product with a dense and hard abrasion resistant coating on one side or both sides of said strip substrate is provided. The thickness of said coating is in total maximally 25 ?m, the hardness of said coating is at least 600 HV and the tensile strength of the steel strip substrate is at least 1200 MPa. The coating is preferably applied by electron beam evaporation and the coating may be, e.g., of Al2O3. The coated metal strip is suitable for shaving equipment, medical instruments, utility and industrial knives as well as saw applications.

Abstract: A film deposition apparatus for forming a film on a substrate includes a chamber capable of maintaining a reduced-pressure atmosphere. The chamber includes a control electrode, a substrate holder opposite to the control electrode, the substrate holder holding the substrate, and a filament for emitting electrons disposed between the substrate holder and the control electrode. The film deposition apparatus further includes a unit for controlling the potential applied to the control electrode to be lower than the potential applied to the filament and a unit for controlling the potential applied to the substrate to be higher than the potential applied to the filament.

Abstract: A method for producing a disk-shaped substrate 10 used for producing an optical disk includes: (a) forming a protective layer 12a that is larger in area than the disk-shaped substrate 10 on a surface of a transparent plate 11a; and (b) cutting a portion of the plate 11a with the protective layer 12a formed thereon other than an outer edge portion of the protective layer 12a to form a disk shape. According to this producing method, a thin substrate can be prevented from being damaged by forming a protective layer. Furthermore, according to this producing method, a protective layer with a uniform thickness can be formed.

Abstract: A method of producing a device for simultaneously carrying out an electrochemical and a topographical near field microscopy is disclosed, which is characterized in that a probe suitable for topographic near field microscopy is covered by a conductive material, the conductive material is covered by an insulating layer, and the conductive material and the insulating layer are removed in the region of the immediate tip of the probe.

Abstract: A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuated. A silicon hydride gas is introduced into the treatment environment, which may be heated prior to the introduction of the gas. The substrate and silicon hydride gas contained therein are heated, if the treatment environment was not already heated prior to the introduction of the gas and pressurized to decompose the gas. A layer of silicon is deposited on the substrate surface. The duration of the silicon depositing step is controlled to prevent the formation of silicon dust in the treatment environment. The substrate is then cooled and held at a cooled temperature to optimize surface conditions for subsequent depositions, and the treatment environment is purged with an inert gas to remove the silicon hydride gas.

Abstract: Disclosed herein is a focusing screen master having a microlens array formed all over a flat substrate surface, the microlens array being constructed by arranging a plurality of types of microlenses that are different from each other in height, radius of curvature and surface configuration.

Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

Abstract: A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The deposition gas and the conversion gas are subjected to a pulsed electromagnetic radiation to effectuate deposition and conversion.

Abstract: A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

Abstract: Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the physical, chemical, and/or conductive properties of the carbon nanotubes.

Abstract: The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A method for coating of variable substrates with highly reactive polymers. Its combination with microcontact printing is used for generating several devices such as patterned arrays of ligands for high throughput screening.

Abstract: Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

Abstract: Ceramic compositions comprising at least about 91 mole % zirconia and up to about 9 mole % of a stabilizer component comprising a first metal oxide having selected from the group consisting of yttria, calcia, ceria, scandia, magnesia, india and mixtures thereof. This stabilizer component further comprises a second metal oxide of a trivalent metal atom selected from the group consisting of lanthana, gadolinia, neodymia, samaria, dysprosium, and mixtures thereof and a third metal oxide of a trivalent metal atom selected from the group consisting of erbia, ytterbia and mixtures thereof. These ceramic compositions are useful in preparing thermal barrier coatings having reduced thermal conductivity for the metal substrate of articles that operate at, or are exposed to, high temperatures.

Abstract: Composite film structures exhibit a predetermined finished color tone comprised of a transparent film layer which exhibits a color deficiency as compared to the finished color tone, and a pigment which is visually associated with, and satisfies the color deficiency of, the film layer. Most preferably, the pigment is provided as a homogenous dispersion in a transparent color-matching layer positioned adjacent to the film layer. Thus, when the film and color-matching layers are viewed collectively as a unit, the perceived color tone will be that of the finished predetermined color tone. That is, the color-matching layer provides visually an additive effect on the perceived color of the composite film structure.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: An improved method for applying organic antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise chemical vapor depositing (CVD) an antireflective compound on the substrate surface. In one embodiment, the compound is highly strained (e.g., having a strain energy of at least about 10 kcal/mol) and comprises two cyclic moieties joined to one another via a linkage group. The most preferred monomers are [2.2](1,4)-naphthalenophane and [2.2](9,10)-anthracenophane. The CVD processes comprise heating the antireflective compound so as to vaporize it, and then pyrolizing the vaporized compound to form stable diradicals which are subsequently polymerized on a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large substrate surfaces having super submicron (0.25 ?m or smaller) features.

Abstract: A thermal barrier coating for an underlying metal substrate of articles that operate at, or are exposed to, high temperatures, as well as being exposed to environmental contaminant compositions. This coating includes an inner layer nearest to the underlying metal substrate comprising a ceramic thermal barrier coating material, as well as an outer layer having an exposed surface and comprising tantalum oxide in an amount sufficient to protect the thermal barrier coating at least partially against environmental contaminants that become deposited on the exposed surface and optionally an intermediate layer between the inner and outer layers comprising alumina. This coating can be used to provide a thermally protected article having a metal substrate and optionally a bond coat layer adjacent to and overlaying the metal substrate.

Abstract: The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface.