Abstract: A manufacturing method for an electronic component connected at a lead terminal thereof to electrodes at an element so that the element is coated at the surface with an over-coat resin, which prevents the lead terminal from being unnecessarily coated with the over-coat resin, thereby improving the automatic insertion efficiency of the electronic component with respect to a printed circuit board.An intermediate portion of the lead terminal positioned at the outer peripheral edge of the element is previously applied with a repellent against the over-coat resin, the lead terminal being mounted on the element and thereafter the element being dipped into the over-coat resin, so that the over-coat resin, when coated on the element, is prevented from adhering to the portion of lead terminal applied with the repellent, thereby avoiding creation of running of the over-coat resin at the lead terminal.

Abstract: A method for moistureproof coating of an electrical product, which comprises applying an organic solution of a polyfluoroalkyl group-containing polymer dissolved in a non-combustible low boiling point organic solvent, to a surface of an electrical product, and drying it by evaporating the low boiling point organic solvent, to form a coating layer of the polyfluoroalkyl group-containing polymer on the surface of the electrical product, wherein said polyfluoroalkyl group-containing polymer is a copolymer of a polymerizable compound having a polyfluoroalkyl group with other polymerizable compound, and the copolymer has a glass transition temperature of not higher than 60.degree. C.

Abstract: The present invention provides a structure and method for fabricating that structure which provides increased capacitance over the prior art while occupying a minimum of surface area of the integrated circuit. The present invention accomplishes this by interleaving multiple capacitor plates to provide increased capacitance while occupying the same surface area as a prior art capacitor providing a fraction of the capacitance provided by the present invention. The present invention is fabricated by providing a capacitor stack which includes interleaved plates of material which may be selectively etched and which is separated by appropriate dielectric material. One portion of the stack is masked while one set of the interleave plates is etched. The etched portion of the interleave plates is filled by a suitable dielectric and a contact is made to the remaining plates. A different portion of the stack is then exposed to an etch which etches the other set of interleave plates.

Abstract: A method of forming external electrodes at both ends of chip parts while elastically holding the chip parts.

Abstract: Ceramic multilayer capacitors are prepared having a reduced metal content in the electrode by the use of finely-divided metal alloy flaked particles.

Abstract: A method is shown which manufactures a semiconductor device having a capacitor. An insulation film having at least one opening of a predetermined pattern is formed on a capacitor formation area on a semiconductor substrate. The opening reaches the surface portion of the semiconductor substrate to permit it to be exposed. A semiconductor layer is selectively grown on the bottom surface of the opening, i.e., on the exposed surface of the semiconductor substrate. Thereafter, the insulation film is removed to leave a recessed region in a capacitor formation area and a capacitor electrode is formed in the capacitor formation area with a gate insulation film therebetween.

Abstract: A process is disclosed for the complete curing of a layer of polyimide in a short time at a low temperature. A solution of polyimide or polyimide precursor having a well-defined viscosity is applied to a substrate to form a layer of predetermined thickness. The substrate and layer are heated in such a manner to cause a continuous increase in temperature of the layer at a predetermined rate to a temperature between about 170.degree. C. and about 225.degree. C. By maintaining a continuous temperature rise during this heating, the total curing of the polyimide layer is accomplished at a temperature less than about 225.degree. C. To determine the optimum rate of temperature rise to cure a given polyimide layer, a similar polyimide layer is formed as a dielectric layer on a ceramic substrate having interdigitated capacitor electrodes formed thereon. The dielectric dissipation factor of the polyimide material is measured dynamically during the curing process.

Abstract: There is disclosed a laminate comprising alternating polymer sheets and metal layers between the polymer sheets, the laminate being substantially free of adhesive. Each polymer sheet of the laminate has a thickness not exceeding about 25 .mu.m, and the resistivity of the metal layer is from 1 to about 4 ohms/square. Such laminates are useful in making capacitors and piezoelectric multimorphs.A method of making such laminates is also disclosed, wherein a plurality of metal-coated polymer sheets are compressed, in the absence of an adhesive, under pressure sufficient to reduce the thickness of each of the polymeric film layers to a value that is no larger than about 25 .mu.m.

Abstract: A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77.ANG. spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density.

Abstract: A method for the manufacture of electrical plasma-polymer multilayer capacitors wherein alternate layers of thin metal conductors and dielectric layers produced by radiation polymerization are deposited on a substrate, after which the portions of the metal layers to which electrical contact is to be made are etched, preferably by sputter etching, to remove oxides therefrom. Then, contact layers are applied to the opposite end faces of the substrate to provide electrical connections for the portions of the metal layers which have been etched, the contact layers consisting of the sequence (1) an aluminum layer, (2) a nickel layer, and (3) a palladium layer.

Abstract: Edge termination of monolithic capacitors having thin electrode layers bonded in dielectric resin is accomplished by ashing away some resin to expose electrode edge surfaces, plating the edge surfaces by vapor deposition, and depositing a conductive layer on the coating by electroless plating, schooping or applying conductive epoxy.

Abstract: A thin-film humidity sensor for measuring the absolute humidity having a base electrode, a moisture-sensitive dielectric layer and a top electrode is formed at the end face of an electrically insulating bushing body by the thin-film technique. The connecting conductors are led through the bushing body and terminate in contact areas which are ground plane and polished together with the end face of the bushing body. The metal layers forming the electrodes are so shaped on application, preferably by means of perforated masks, that they each cover the contact area of the associated connecting conductor and are electrically connected thereto. The bushing body is inserted into a sleeve of a highly alloyed nickel-molybdenum compound and connected thereto in pressure-resistant manner.

Abstract: A method of providing narrow conductor tracks of metal silicide is provided. According to this technique, a pattern of polycrystalline silicon covered by a protective layer is converted along the edges into the silicide by covering the device with a metal. The edges are then silicidized laterally over a distance of 20 to 500 nm. The remaining silicon is selectively removed, and the tracks obtained can serve as conductor masks, such as, for example, a plate of a capacitor.

Abstract: Silicon capacitive pressure sensors are produced by a batch-process method, comprising the steps of: (1) providing first and second wafers of conductive silicon; (2) oxidizing a surface of each wafer with a layer of silicon dioxide; (3) removing a predefined area of the silicon dioxide layer from a first one of the wafers, leaving an exposed surface of unoxidized silicon in the predefined area; (4) superimposing the second wafer onto the first wafer so that the silicon dioxide layer of the second wafer is in contact with the silicon dioxide layer of the first wafer; (5) fusing the two wafers together at their contacting silicon dioxide layers; (6) metallizing selected areas of the outer surfaces of the two wafers to form electrical contacts; and (7) cutting the wafers into individual pressure sensors.

Abstract: A method for producing a capacitor includes the steps of: forming on a dielectric layer formed on a first electrode, an insulating composition, e.g., an organic polymeric compound containing a metal powder or an organometallic compound as a metal source, which is rendered conductive upon heating by radiation; and locally and gradually heating the insulating composition layer so as to form a second conductive electrode while measuring an increase in a capacitance between a conductor end portion for measuring a capacitance and the first electrode. According to this method, a capacitor having a precise capacitance can be formed.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 10.00 parts by weight of a glass frit such as, typically, that of PbO-B.sub.2 O.sub.3 -SiO.sub.2 composition, and a vehicle such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the glass frit. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The capacitors or varistors having their conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those having their conductors or electrodes fabricated from a conventional silver paste.

Abstract: Articles, such as electrical circuits or elements, are encapsulated by melting polyarylene sulfide in combination with at least one print compound such as monazo-nickel complex, lead chromate-lead molybdate, quinacridone, Ni--Sb--Ti, Co--Zn--SiO.sub.2 or lead chromate, injecting this molten composition around the article to be encapsulated, and cooling and solidifying the molten composition. The articles may latter be laser printed.

Abstract: Continuous polymer film of the polyacenequinone radical (PAQR) type, substrates coated with PAQR, and the method of coating a PAQR film comprising insister polymerization of at least on aromatic acene hydrocarbon monomer and at least one acidic monomer selected from di- or tri-aromatic anhydrides or derivatives thereof on a substrate by heating deposited monomers slowly under oxygen excluding conditions to a temperature of at least 300.degree. C. and post-curing the formed film at a temperature above 300.degree. C. thus forming a continuous, integral, pin-hole-free PAQR film on the substrate.

Abstract: The present invention relates to a capacitive hygrometer comprising a capacitor (1) having a dielectric material (3), whose dielectric constant varies as a function of the quantity of water absorbed. It has on one of its conductive faces numerous fissures bringing the dielectric material into direct contact with the atmosphere whose degree of humidity is to be measured. However, the electrical continuity of the fissured conductive face is maintained.Application to the measurement of the degree of humidity of the air.

Abstract: A dielectric composition, for use in the manufacture of ceramic capacitors, and comprised of barium titanate (BaTiO.sub.3) with small additions of niobium pentoxide (Nb.sub.2 O.sub.5) and gadolinium sesquioxide (Gd.sub.2 O.sub.3).

Abstract: A method of manufacturing thin film dielectric material by directing vapors of reactants containing lead and additional metals and an oxidizing gas onto a heated substrate to form a layer of dielectric material thereon, which layer can be of a high dielectric constant (greater than 5000).

Abstract: A method of providing a copper metallization on a dielectric or semiconductive body, and a dielectric or semiconductive body having a metallization consisting essentially of copper. According to the method, a mixture of copper oxide powder and 0 to 15 weight percent reduction-resistant glass frit is dispersed in an organic vehicle and a solvent to produce a paste. The paste is applied to the body to provide a coating thereon. The coating is dried to remove the solvent, and then the coated body is fired in an oxidizing atmosphere at a temperature below the melting temperature of the glass frit to remove the organic vehicle. Finally, the coated body is fired a second time in an atmosphere which is reducing to the copper oxide but substantially nonreducing to the glass frit. The second firing is at a temperature from 700.degree. to 1050.degree. C. for from 120 to 15 minutes to convert the copper oxide to copper metal.

Abstract: A ceramic slurry or slip includes ceramic powder, an organic plasticizer and a resin binder combined in an aromatic hydrocarbon solvent and has a viscosity that is independent of shear rate. Monolithic ceramic capacitors having fewer pin holes are made by forming a falling sheet of this Newtonian slip, and repeatedly interrupting the falling curtain by passing a carrier through it to form layers of green ceramic. An electroding film is deposited on each green ceramic layer to form buried electrodes. The Newtonian slip is advantageously self leveling and contains relatively few pin holes that degrade capacitor performance.

Abstract: Electret transducers, for example microphones, have a backplate which is metallized on one surface, the metallized surface forming one side of a capacitor. A frame sits on the metallized tape to hold the tape taut over the backplate. Metal connections are made to the backplate and frame to complete the circuit. The metallization is conventionally formed by vapor deposition of aluminum. This is a lengthy and relatively expensive process. Also the metallization can give rise to galvanic problems. The invention prints a pattern of conductive ink on the various parts. Good contact is obtained, galvanic action avoided and a reduction in manufacturing costs occurs. Simplified assembly is also obtained.

Abstract: A method for inhibiting oxidation of copper electrodes of a ceramic capacitor, comprising the step of subjecting copper films formed by an electroless plating process or the like and serving as opposed electrodes of a ceramic capacitor to a hydrocarbon halide compound including trichloroethylene, perchloroethylene, freon, chlorobenzene, methyl chloride, methylene chloride, chloroform, carbon tetrachloride, or the like.

Abstract: Pure silver and palladium powders are thoroughly mixed and dispersed by ball milling in a solution of a surfactant in a liquid vehicle. After drying and granulating, the resulting powder was heated to 500.degree. C., first to form an Ag/Pd alloy powder and then to cause palladium to precipitate from the interior of the alloy particles, to form a protective barrier of PdO on the alloy particle surfaces and to alter the alloy to 90Ag/10Pd. This powder, when used to make a buried electrode in a ceramic capacitor changes dimensions very little up to 500.degree. C. in the early stage of sintering the ceramic below which temperature the ceramic is weakest and most subject to cleaving.

Abstract: A thin film circuit including resistor elements and capacitor elements is prepared by forming a tantalum film for capacitor on an insulating substrate, forming a tantalum film for resistor over the substrate, covering a predetermined region of the tantalum resistor film with a titanium film, heat treating a resulting assembly, removing the titanium film, and then covering the predetermined region with a metal film to provide ohmic contact therebetween.

Abstract: An activator composition paste includes a homogeneous dispersion of a palladium and commensurate amounts of silicon and of zinc. A screen printed layer of this paste is applied to a ceramic capacitor body to form electrodes, terminations or both. The body is heated to 615.degree. C. and subsequently electroless nickel plated providing excellent electrical and mechanical connection of the plated nickel to the ceramic.

Abstract: A dielectric composition which is particularly suitable for the manufacture of ceramic capacitors, comprises lead magnesium niobate with additions of one or more lead titanate, lead stannate, or lead zirconate. The composition can be fired at a temperature between 950.degree. and 1100.degree. C., which is lower than the conventional firing temperatures of 1200.degree. to 1400.degree. C. The lower firing temperature means that, in the case of multilayer ceramic capacitors, the internal electrodes can be made of cheaper materials than previously with resultant materials and process cost savings. Some of the compositions exhibit higher dielectric constants than conventional Z5U ceramics, which means that capacitor device size can also be reduced.

Abstract: The present invention relates to a process for producing a capacitive hygrometer, as well as to a hygrometer obtained by this process.Onto a conductive layer forming the first electrode is deposited a layer of a material with a dielectric constant varying as a function of the quantity of water absorbed. Onto the said dielectric material layer is then deposited a layer with a thickness exceeding 200 .ANG. of a slightly oxidizable metal, which forms the second electrode. The latter is made permeable to water by heat treatment at a temperature close to the softening temperature of the dielectric.Application to the measurement of the relative humidity of air.

Abstract: In the preparation of regenerable dielectric layers through polymerization of gases by means of a glow discharge, a siloxane or a silazane or a mixture of siloxanes and/or silazanes is blown into the region of the glow discharge in addition to monomeric perfluoro-hydrocarbons with the empirical formula (CF.sub.2).sub.n and/or the corresponding perfluorized cyclic alkanes.

Abstract: Method for preparation of metal-free strips in the metal vapor deposition of an insulating tape intended for use in electric capacitors, in which the insulating tape is covered, in the region of the metal-free strips to be prepared, by an endless cover tape which rests against the insulating tape and travels along with the same velocity as the former and is coated with oil on the side facing the metal evaporator before entering the vapor deposition zone. The invention is characterized by the features that first, the insulating tape and the cover tape are brought into contact with each other; that then by vapor deposition of oil, a film is prepared which also covers the lateral surfaces of the cover tape as well as slightly adjacent areas, and whereupon the metal vapor deposition takes place.

Abstract: The invention relates to a method suitable for raising the breakdown voltage of a capacitor of the integrated circuit type formed on a semiconductor substrate and characterized in that the lower plate of the capacitor is under etched so that an air wedge is obtained. As a result of the air wedge, the electric current passed through the semiconductor material is lengthened and the breakdown phenomena at the edges of the capacitor are reduced. The invention also relates to capacitors obtained in this manner.

Abstract: A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

Abstract: The present invention provides a polyolefin film for electric insulation which is obtained by using a uniaxially drawn film of crystalline polyolefin, in which intramicrofibril and intermicrofibril amorphous parts of the uniaxially drawn film are impregnated with a low loss insulation oil, and which simultaneously satisfies the following conditions:(i) a tensile Young's modulus of the film impregnated with the insulation oil is 2.times.10.sup.4 kg/cm.sup.2 or higher;(ii) a dimensional change (change in length) of the uniaxially drawn film in the insulation oil at 100.degree. C. is within a tolerance of .+-.2%;(iii) a ratio of a long period at room temperature of an ether extraction residue of the uniaxially drawn film to a long period thereof before ether extraction is within a range of 0.900 to 0.998; and(iv) a dimensional increase of the ether extraction residue in the insulation oil at 100.degree. C. is 0.1% or higher.

Abstract: An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600.degree. C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: The present invention relates to a low cost method of fabricating capacitors within tight tolerance ranges. The method involves forming, by vapor deposition or the like, discrete electrode areas on an insulating substrate, and depositing a dielectric layer over the substrate and the areas between the electrodes. A further series of electrode are formed over the dielectric in partial registry with the first mentioned electrodes, and the substrate is thereafter diced to expose opposed edge portions of the resultant capacitors. The capacitors are terminated preferably by a sputtering technique, the sputtered material being insulated from contact with the edge portions of non-exposed electrodes by the deposited dielectric.

Abstract: Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphine at a temperature in the range from about 570 degrees C. to 595 degrees C.These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.

Abstract: A step-over connection in a monolithic device including laterally spaced alizations having upper surfaces at one or more levels above a supporting substrate and a dielectric layer over one of the metalizations. The connection is in the form of a metal bridge spanning the space between the metalizations, and is formed by successive steps of providing a first resist layer, forming openings therein, etching away an area of dielectric layer, gold plating pillars on the exposed metalization surfaces, sputtering a gold film on the first resist layer and exposed pillars, providing a second resist layer with a pillar connecting bridge pattern opening, gold plating the bridge connection on the exposed sputtered gold film, and removing the resist layers and excess gold film.

Abstract: An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

Abstract: A pressure sensor including a pressure capsule such as a dual diaphragm quartz capacitance pressure capsule and structure for supporting and sealing same within the pressure environment to be measured. The pressure capsule having two parallel quartz plates spaced by a dielectric ring forming a vacuum chamber therein. The structure providing a force balanced support for compressively loading the pressure capsule through the dielectric ring. The structure further having transfer port therein to communicate the pressure environment to both plates.The method of making the quartz capacitive pressure capsule includes the steps of surface preparation, preglazing of the component parts and vacuum cooling by utilizing a controlled pressure-temperature profile.

Abstract: An activator composition paste includes a homogeneous dispersion of a palladium and commensurate amounts of silicon and of zinc. A screen printed layer of this paste is applied to a ceramic capacitor body to form electrodes, terminations or both. The body is heated to 615.degree. C. and subsequently electroless nickel plated providing excellent electrical and mechanical connection of the plated nickel to the ceramic.

Abstract: A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

Abstract: The specification discloses a low temperature process for forming an effective insulating layer of a selected oxide on the surface of a chosen conductive substrate. The oxide so formed has low pinhole density, good surface morphology, and good step coverage. In addition, the disclosed process simultaneously minimizes the deformation or restructuring of the surface of a temperature-sensitive conductive substrate, which would produce unwanted hillocks or spikes that degrade the insulating properties of the oxide. In accordance with the disclosed process, the substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free atomic oxygen to produce a reaction between the atomic oxygen and the vapor phase reactant to form the selected oxide, which deposits on the surface of the conductive substrate. Improved multilayer structures comprising multiple layers of conductive material separated by an oxide dielectric layer are formed by the disclosed process.

Abstract: Manufacture of electrical components, particularly layer capacitors with dielectric layers of glow polymerisate, in which strip-shaped carriers are separated from an insulating tape. First, contact layers of a metal which does not soften during later contacting are applied to two opposite sides. Thereupon a metal layer and, optionally, further layers are applied to at least one side which is still free of metal. The metal layer is applied so that it overlaps at least one of the contact layers and forms with the latter an electrically conducting connection. The method is characterized by the features that the carriers are separated from an unmetallized insulating tape; that the cutting surfaces of the carriers are coated with the contact layers; and that then the metallization of the components is applied to one of the smooth surfaces which have not yet been metallized.

Abstract: A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a p-type region formed in the n-well. A buried contact, extending from the plate member, pierces the p-type region and contacts the well. In addition to the capacitance associated with the plate member, p-type region and well, capacitance is obtained between the side walls of the n-type regions and p-type regions.

Abstract: A process of coating an electric component with a setting artificial resin by dipping the component into the liquid resin-hardener compound and curing the deposited layer by the application of heat, comprising heating said component before dipping said component into said resin-hardener compound.

Abstract: Miniature electronic component parts such as capacitors or resistors are end conductively coated by use of a part handling plate having a multiplicity of passageways therethrough with walls coated by resilient material to grip the parts. A bank of pins in a press (a) are used to move the parts in the passageways, (b) are used to load the parts into the passageways through the use of a loading plate housing part receiving openings filled with parts by the use of vibration equipment, and (c) are used to discharge the parts from the passageways into the recesses of an unloading plate. The parts are moved in the passageways first to expose one end to be coated and then second to expose the other end of the parts to be coated.

Abstract: A layer capacitor is disclosed having at least two oppositely polarized metallizations and an intervening dielectric layer consisting of a glow polymerization arranged on a substrate. During production these layers are laterally defined by only one diaphragm. In order to make as great a use of the substrate surface and a rectangular shape of the component as possible, neighboring layers are designed of equal area and are applied in parallel diagonally offset to the edges of the diaphragm aperture.