Abstract: A method for treating an organic polymer material, preferably a vinylidene chloride/vinyl chloride copolymer (Saran) to produce a flat sheet of carbon film material having a high surface area (.apprxeq.1000 m.sup.2 /g) suitable as an electrode material for super capacitor applications. The method comprises heating a vinylidene chloride/vinyl chloride copolymer film disposed between two spaced apart graphite or ceramic plates to a first temperature of about 160.degree. C. for about 14 hours to form a stabilized vinylidene chloride/vinyl chloride polymer film, thereafter heating the stabilized film to a second temperature of about 750.degree. C. in an inert atmosphere for about one hour to form a carbon film; and finally activating the carbon film to increase the surface area by heating the carbon film in an oxidizing atmosphere to a temperature of at least 750-850.degree. C. for between 1-6 hours.

Abstract: A deposition process for coating a substrate with an ultrasonically generated aerosol spray of a pseudocapacitive material or a precursor thereof contacted to a substrate heated to a temperature to instantaneously solidify the pseudocapacitive material or convert the precursor to a solidified pseudocapacitive metal compound, is described. The ultrasonic aerosol droplets are much smaller in size than those produced by conventional processes and the heated substrate minimizes the possibility of contamination, thereby providing the present coating having an increased surface area. When the coated substrate is an electrode in a capacitor, a greater surface area results in an increased electrode capacitance.

Abstract: Conductive polymers are formed with a self-regenerating oxidant system made with a reversibly reducible metal salt at amounts sufficient to polymerize a cyclic monomer through oxidation and leave a reduced metal ion, and an oxidant in an amount sufficiently small and under conditions sufficient to oxidize the reduced metal ion but avoid oxidation or degradation of the polymer. The most preferred combination of agents includes ferric nitrate and a small amount of ammonium nitrate at a pH within the range of 2 to 7.

Abstract: A borosilicate containing coating is formed on an electronic substrate by applying a borosilazane polymer on the substrate and converting it to borosilicate by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.

Abstract: Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.

Abstract: A process is provided for preparing mixed metal oxide materials having improved leakage characteristics when formed into a capacitor. The process comprises: (a) preparing a solution of a liquid precursor of the mixed metal oxide materials having a given composition in a water-immiscible solvent; (b) adding a small amount of water to the solution to form a two-phase mixture; (c) refluxing the two-phase mixture for a period of time; and (d) removing the water. Optionally, an additional amount of the water-immiscible solvent may be added prior to removing the water. In this case, both the added amount of the water-immiscible solvent and the water are removed simultaneously. The treated metal organic acid salt solutions provide ceramic thin films having improved leakage characteristics as compared to the prior art thin films prepared from untreated prior art solutions.

Abstract: The present invention relates to a method of making conductive electrodes for use in multilayer ceramic capacitors or inductors using organometallic ink. The method includes the steps of providing an organometallic ink which is free of any particles in excess of 0.1 micron in diameter and which contains an organometallic compound containing at least one of tin or ruthenium, applying the organometallic ink to a dielectric substrate, and sintering the organometallic ink to form a metal oxide film having a thickness of less than about 1.5 microns.

Abstract: A method of profiling the border of termination paste applied to a chip capacitor electrode comprising the steps of casting a layer of termination paste of finite thickness; passing a profiling element through the upper part of the layer of paste, the element having an exterior profile that is arranged to dip into the paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in the layer of the paste; and, dipping a chip capacitor electrode into the paste layer at the reverse profile formed therein, to terminate the capacitor with the profile formed in the paste.

Abstract: A deposition process for coating a substrate with an ultrasonically generated aerosol spray, is described. The resultant droplets are much smaller in size than those produced by conventional processes, thereby providing the present coating having an increased surface area. When the coated substrate is an electrode in a capacitor, a greater surface area results in an increased electrode capacitance.

Abstract: A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Abstract: A method of conformally coating a capacitor with an epoxy layer of the present invention is used to coat the capacitor using fluidized bed techniques. The method includes the use of a chiller bar which is placed against the cathode surface of a capacitor slug which has been heated to 150.degree. C. The capacitor slug and chiller bar are then dipped into the fluidized bed of epoxy powder. The epoxy powder will melt to the capacitor slug on all surfaces except the surface in contact with the chiller bar. After removing the capacitor slug and chiller bar from the fluidized bed and separating the chiller bar from the capacitor, the capacitor will be coated with a layer of epoxy coating on all surfaces except the cathode surface.

Abstract: Acid-doped, polyaniline-based polymers are formed into fibers, films, and coatings with a solvent of at least one bicyclic terpene. Such a solvent system is characterized by a drying temperature of less than 150.degree. C. and a relatively low toxicity.

Abstract: Acid-doped, polyaniline-based polymers are formed into fibers, films, and coatings with a solvent of N-ethylpyrrolidone. Such a solvent system is particularly useful for the formation of a solid electrolyte on a capacitive element.

Abstract: A combination of static voltage and sweep voltage tests performed on capacitor grade powders gives a valid prediction of performance of eventual solid electrolyte capacitors incorporating such powders.

Abstract: A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided.

Abstract: A process of manufacturing a porous carbon material and a capacitor having the same is provided. The process is comprised of: forming an intermediate blank (in the shape of a desired electrode) made of a metal carbide material having a porosity in the range of substantially 30% to 50% by volume. The blank is then impregnated by exposure to a gaseous hydrocarbon mixture at a temperature exceeding the decomposition of the hydrocarbon until the mass of the blank increases by about 10% to 25%. Next the inner surface of the blank is activated by heating. The blank is then exposed to gaseous chlorine and heated to remove the metal and form the blank having transport channels. Further chlorination occurs which forms nano sized pores in the structure. Thus, a porous carbon material is made which contains transport channels and nano sized pores.

Abstract: A method of manufacturing a plurality of electronic multilayer component search of which alternately stacked electrically conductive and insulating layers alternately connected to opposite edges of the component, which method comprises: providing a substrate having a face endowed with a regular pattern of substantially parallel elongated protrusions separated by valleys; providing a first and a second flux of electrically conductive material in a direction subtending an angle of less than 90 with the substrate face and extending substantially parallel to the surface protrusions, and covering the thus-formed electrically conductive layers with intervening electrically insulating layers, the first and second fluxes having substantially oppositely directed in-plane components; providing said first and second fluxes with intervening insulating layers in an alternate manner as often as desired; dividing the substrate into strips, each including a protrusion, by severing the substrate along a series of planes, each

Abstract: Novel structures for capacitors which are capable of withstanding heat treatments to at least 400.degree. C. while providing low defect densities and low electrical series resistance in its electrodes are disclosed. In one embodiment of the present invention, a capacitor structure includes a bottom capacitor electrode formed of a first sub-layer of aluminum, a second sub-layer of tantalum nitride, and a third sub-layer of tantalum. The capacitor structure further includes a sputtered dielectric layer of tantalum pentoxide over the tantalum sub-layer of the bottom electrode. The resulting structure is anodized such that the underlying tantalum layer is fully anodized, and preferably such that a portion of the tantalum nitride layer is converted to a tantalum oxy-nitride.

Abstract: The electronic component of the present invention includes: an element having an internal electrode therein; an external electrode formed on an end portion of the element where an end face of the internal electrode is exposed; and a protection layer formed on the entire surface of the element except for the end portion of the element, wherein the protection layer is made of a metal oxide.

Abstract: A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Abstract: The invention relates to a hybrid RC element and to a simple method of manufacturing such an element. The inventive hybrid RC element comprises a capacitor body and a resistor body. Said element is characterized in that it includes a block-shaped, ceramic capacitor body which is provided with a contact layer on two parallel surfaces, and in that a block-shaped, ceramic resistor body is provided on one of said contact layers, the surface of the resistor body facing away from the capacitor body also being provided with a contact layer. The resistor body is preferably made from doped Si. The inventive hybrid RC element is very suitable for applications in which the element is exposed to high voltage pulses (1 kV or more). Unlike the known hybrid RC elements, the element in accordance with the invention is not subject to short-circuits under these conditions.

Abstract: An optimized electroless copper plating technique suitable for plating electroless copper upon ceramics.

Abstract: A biaxially oriented laminated polyester film, comprises a layer A having a thickness of 0.5 .mu.m, composed of a polyester having no crystalline melt peak at not less than 230.degree. C. in the differential thermal analysis and laminated on at least one surface of another polyester layer, with a coating layer containing not less than 50 wt % of an acrylic resin or urethane resin as a coating component being formed on the surface of said layer A.

Abstract: A PZT ferroelectric thin film is sputter deposited on an electrode without microcracks while avoiding oxygen and Pb ion deficiencies at the electrode interface by initially forming a buffer layer containing a sufficient amount of a volatile Pb component and a sufficient amount of oxygen to easily absorb the energy of sputter particles. The PZT ferroelectric thin film can also be deposited by laser ablation.

Abstract: The present invention concerns an electrode for an electric cell or supercapacitor containing a non-aqueous liquid electrolyte, the electrode comprising an electronically conducting porous first layer including at least one first face covered with a microporous second layer constituted by a polymeric material, the electrode being characterized in that said second layer is produced by coagulation of said polymer from a solution of said polymer impregnating said first face.

Abstract: A high-capacitance thin film capacitc is compact and has a low profile. A dielectric layer 3 is formed between opposed electrodes 1 and 2. Between the electrodes and the dielectric layer are two layers of conductive particles, 4 and 5.

Abstract: The present invention provides a method of forming a high strength dielectric film which provides a high dielectric constant for a high density device, and a method of fabricating a capacitor using such a method. The method includes a two step process where one of the steps provides a composition BST layer serving as a nucleation layer. For example, a BST layer having a composition of Ba.sub.x Sr.sub.1-x TiO.sub.3, where X has a range of about 0 to 0.4. Another BST layer having a composition of Ba.sub.x Sr.sub.1-x TiO.sub.3 is provided, where X is about 0.5. Such a method provides a high dielectric film with a very smooth surface, compared to conventional methods.

Abstract: When forming a zinc-deposited base material for metallized capacitors, a primer layer for zinc-deposition made from at least one compound selected from the group comprised of an oxide of silicon, titanium and zirconium is formed on at feast one side surface of a base body comprised of a film or a thin condenser paper. Next, a zinc-deposited layer is formed on top of the primer layer. Then, a protective layer made from at least one compound selected from the group comprised of silicon-based oil, fluoro-based oil, alkylnaphthalene, polydiphenylether, fatty acids, fatty acid salts and paraffin wax is formed on top of the zinc-deposited layer. In this way, it becomes possible to form a zinc-deposited base material having excellent moisture resistance when used for metallized capacitors.

Abstract: A method for producing a ferroelectric thin film according to the present invention includes the steps of: forming a PbTiO.sub.3 film on an electrode provided on a substrate; and forming a PZT film on the PbTiO.sub.3 film by a CVD method.

Abstract: Thin, smooth conductive layers for internal electrodes of multilayer ceramic capacitors are produced by a method including the steps of forming a conductive paste layer on a green ceramic sheet with a conductive paste by screen printing so as to have a center-line mean roughness of not more than 1.0 .mu.m, a ten-point mean roughness of not more than 5.0 .mu.m and a thickness of metal in the dried conductive paste layer of 0.5 to 2.0 .mu.m. The conductive paste consists essentially of 50 to 70% of an organic vehicle and 30 to 50% of a metal powder with a particle size range of 0.1 to 1.5 .mu.m and a mean particle size of 0.3 to 1.0 .mu.m.

Abstract: In a ceramic substrate with a thin-film capacitor, having a ceramic substrate a lower electrode layer formed on the ceramic substrate, a dielectric layer formed on the lower electrode layer and made of an oxide of a material constituting the lower electrode layer, and an upper electrode layer formed on the dielectric layer, a plating layer is provided between the ceramic base and the lower electrode layer to serve as a basis for the lower electrode layer.

Abstract: The structurally stable gelled electrolyte of the present invention includes a base electrolyte, a three-dimensional polymer precursor that is radiation curable and an electrically non-conducting solvent gelling agent. The base electrolytes of this invention are comprised of an aprotic liquid and a dissolved ionizable alkaline metal salt. The preferred radiation curable polymer pre-cursors of this invention include trimethylol propane ethoxy triacrylate (TMPEOTA) and poly(ethylene glycol) diacrylate (PEGDA). The solvent gelling agent should be a solid powder or polymer with high surface area to adsorb the liquid electrolyte. Solid powders that can be used in the gelling agent include inorganic oxygen compounds such as silica (SiO.sub.2), titania (TiO.sub.2), alumina (Al.sub.2 O.sub.3), magnesium oxide (MgO), barium oxide (B.sub.2 O.sub.3) and the like. Other compounds that can be used in the gelling agent include super absorbent polymers, clays, zeolite and such.

Abstract: A method is described for grading the electrical field at the surface of an electrode by depositing a semiconductive coating thereon. An electrode substrate is powered at a preselected temperature and power. A mixture of gases is then passed through an electrical discharge to ionize at least a portion thereof to form the semiconductive coating on the surface of the electrode. Also described is the plasma enhanced chemical vapor deposition of a diamondlike carbon (DLC) film onto a substrate. A substrate is maintained at a preselected DLC forming temperature and is negatively biased at a first preselected voltage. A first gaseous mixture of hydrocarbons and argon is then passed through an electrical discharge to at least partially ionize the hydrocarbons to form DLC film on the substrate. The substrate is then negatively biased at a second preselected voltage lower than the first preselected voltage.

Abstract: A method of manufacturing a terminated ceramic capacitor comprises forming the capacitor in the configuration of a parallelepiped having end surfaces joining the major base portions which define an acute angle with one base and an obtuse angle with the other. Electrodes of opposite polarities are exposed at the opposite end surfaces. A conductive coating, generally of metal or metal frit is applied to the entire end and base surfaces, the side surfaces being maintained clear of termination material. By removing termination materials from the acute angle junctions of end and base surfaces there is provided a capacitor which may be inserted into a circuit by contact with the opposite bases or the opposite ends. the invention relates also to the unique resultant capacitor.

Abstract: In the formation of a silicon nitride film, dichlorosilane and ammonia are used as source gas and, for example, argon is used as carrier gas. The pressure (total pressure) inside a chamber is set to about 100 to 300 Torr (1.33.times.10.sup.4 to 4.00.times.10.sup.4 Pa). The desirable setting is that, for example, dichlorosilane is 60 SCCM, ammonia is 300 SCCM and hydrogen is 20 SLM. When the silicon nitride film is formed under such conditions, improvement in a masking effect of the silicon nitride film for preventing oxidation can be achieved.

Abstract: A preferred embodiment of this invention comprises a perovskite-seed layer (e.g. calcium ruthenate 40) between a conductive oxide layer (e.g. ruthenium oxide 36) and a perovskite dielectric material (e.g. barium strontium titanate 42), wherein the perovskite-seed layer and the conductive oxide layer each comprise the same metal. The metal should be conductive in its metallic state and should remain conductive when partially or fully oxidized. Generally, the perovskite-seed layer has a perovskite or perovskite-like crystal structure and lattice parameters which are similar to the perovskite dielectric layer formed thereon. At a given deposition temperature, the crystal quality and other properties of the perovskite dielectric will generally be enhanced by depositing it on a surface having a similar crystal structure. Undesirable crystal structure formation will generally be minimized and lower processing temperatures may be used to deposit the perovskite dielectric layer.

Abstract: A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkyated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosiy of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.

Abstract: The present invention provides a manganese nitrate coating having high conductivity and solid tantalum anode capacitors having low ESR by using an oven atmosphere which effectively treats all of the anodes in the oven. The manganese nitrate coating of the present invention is produced under highly oxidizing conditions by providing one or more oxidizing agents more active than nitrogen dioxide in the atmosphere of the oven during pyrolysis of manganese nitrate. The oxidizing agents include nitric acid, hydrogen peroxide, ozone, and mixtures thereof.

Abstract: A process for making an infra-red detector array wherein an array of m * n first electrodes is formed on a substrate and a layer of plastic material having a polarization sensitive to infra-red radiation is deposited over the electrodes. The layer is partitioned into individual films each over an associated first electrode and second electrodes are positioned on the films on the side opposite to the associated first electrodes.

Abstract: A silicon nitride barrier layer is deposited on a gallium arsenide substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the barrier layer. A first electrode is formed on the stress reduction layer, then a liquid precursor is spun on the first electrode, dried at about 400.degree. C., and annealed at between 600.degree. C. and 850.degree. C. to form a BST capacitor dielectric. A second electrode is deposited on the dielectric and annealed.

Abstract: The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.

Abstract: A film capacitor element produced from a metallized polyester film is described. In the metallized polyester film, the adhesion between a vapor-deposited metal layer and a polyester substrate is improved by providing a coating layer comprising a specific water soluble or water dispersible resin. The film capacitor produced by the use of the metallized polyester film has good moist heat resistance and long term stability in performance.

Abstract: In a method for producing a multilayer circuit, it is possible to produce capacitor structures including electrodes and a dielectric arranged in between. By pressing the capacitor structures into a ceramic layer, it is possible to produce a high-quality capacitor inside the multilayer circuit.

Abstract: Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.

Abstract: An impedance detector, in particular for radiosonde operation. The detector comprises a substrate (10 . . . 10E) made of an insulating material, onto which substrate the electrode and contact patterns (11, 11a, 13) necessary for the formation and connecting of the detector impedance have been applied. Between the detector impedance electrodes (11, 13), there is an active film (12), whose impedance values are a function of the physical quantity measured by means of the detector. The substrate of the detector is an oblong core filament (10; 10B; 10C; 10D; 10E) of an insulating material, onto and around which core filament said electrodes (11, 13) and said active insulating film (12) have been applied. Also, a novel process is described for the manufacture of said impedance detector.

Abstract: An impedance detector, in particular for radiosonde operation. The detector comprises a substrate (10 . . . 10E) made of an insulating material, onto which substrate the electrode and contact patterns (11, 11a, 13) necessary for the formation and connecting of the detector impedance have been applied. Between the detector impedance electrodes (11,13), there is an active film (12), whose impedance values are a function of the physical quantity measured by means of the detector. The substrate of the detector is an oblong core filament (10;10B;10C;10D;10E) of an insulating material, onto and around which core filament both electrodes (11,13) and such active insulating film (12) have been applied. Also, a novel process is described for the manufacture of such impedance detector.

Abstract: A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system.

Abstract: A method for the manufacture of foil capacitors with metallized plastic films, said method comprising the following steps:coiling at least one pair of metallized plastic films so as to form the stacked structure of the capacitors;metallizing the lateral faces of the coiled structure in order to create the plates of the capacitors;cutting out the coiled and metallized structure, or parent capacitor, into semi-finished capacitors;putting the semi-finished capacitors and their connection wires through a cleansing flux;soldering the connection wires to the plates of the semi-finished capacitors;wherein the soldering is done by wave soldering and wherein, between said metallization and said cutting, a heat treatment operation designed to give the plastic film the characteristics needed to withstand the wave soldering and a new metallization designed to ensure the mechanical and electrical quality of the connections are carried out successively.

Abstract: Sacrificial coatings are applied to the rounded ends of the flattened spiral laminates for wound film capacitors. The coated laminates are positioned between tapes masking their flat surfaces. The end faces of those laminates are then sprayed with the schoopage metal and the laminates are subsequently tumbled to remove the coatings and any overspray appearing on their rounded surfaces.

Abstract: Method, in particular in radiosondes, for measurement of relative humidity by using a capacitive humidity detector (10) or a combination of detectors (10.sub.1,10.sub.2 ;10P), as well as humidity detectors. In the detector, between the capacitor plates, an insulating material (12) is used, whose permittivity is a function of the amount of water vapor absorbed by the insulating material (12). The detector (10) or the combination of detectors is heated in order to remove any ice, frost or condensed humidity deposited on the face and/or in the environment of the detector. The detector capacitance (C.sub.M) or a part (C.sub.1 . . . C.sub.N) of same is heated, in time and/or in place, periodically by means of electric current (I). The detecting of the detector capacitance (C.sub.M) is carried out without measurement of the detector temperature after the detector capacitance or a part (C.sub.1 . . . C.sub.