Condenser Or Capacitor Patents (Class 427/79)
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Patent number: 5486377Abstract: Electronic parts are stuck into holes provided in an elongated retainer sheet and thereby retained. The retainer sheet as a transfer medium for the electronic parts is made to pass through a plating bath, a cleaning and drying section, an electrical characteristic measuring section, and a takeout section in turn. This allows the electronic parts 1 to be subjected to a plating process on their external electrodes, an electrical characteristic measuring process, and a taping process in a continuous manner. As a result, reduction in the number of handling manhours in the individual processes as well as space saving can be realized, while productivity can be improved.Type: GrantFiled: March 7, 1994Date of Patent: January 23, 1996Assignee: Murata Manufacturing Co., Ltd.Inventors: Mitsuro Hamuro, Shigeyoshi Matsuda, Shoichi Kawabata
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Patent number: 5485747Abstract: Method, in particular in radiosondes, for measurement of relative humidity by using a capacitive humidity detector (10) or a combination of detectors (10.sub.1, 10.sub.2 ; 10P), as well as humidity detectors. In the detector, between the capacitor plates, an insulating material (12) is used, whose permittivity is a function of the amount of water absorbed by the insulating material (12). The detector (10) or the combination of detectors is heated in order to remove any ice, frost or condensed humidity deposited on the face and/or in the environment of the detector. The detector capacitance (C.sub.M) or a part (C.sub.1 . . . C.sub.N) of same is heated, in time and/or in place, periodically by means of electric current (I). The detecting of the detector capacitance (C.sub.M) is carried out without measurement of the detector temperature after the detector capacitance or a part (C.sub.1 . . . C.sub.N) of same has cooled down substantially to the temperature of the environment.Type: GrantFiled: August 23, 1994Date of Patent: January 23, 1996Assignee: Vaisala OyInventors: Veijo Antikainen, Ari Paukkunen, Lars Stormbom, Hannu Jauhiainen, Jorma Ponkala
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Patent number: 5471723Abstract: Resistive and capacitive absolute pressure sensors are disclosed which are made by surface micromachining and thin-film techniques. In the case of a capacitive sensor, the electrodes have a high insulation resistance relative to each other, the diaphragm exhibits only little tensile strain in the finished condition, no sublimation step is necessary to prevent the diaphragm from sticking to the substrate, the diaphragm provides a measurement signal over a wide pressure range even if its rests against the substrate, the measurement signal is virtually temperature-independent, and only few chemical-vapor-deposition and photolithographic steps are necessary.Type: GrantFiled: July 26, 1994Date of Patent: December 5, 1995Assignee: Endress + Hauser GmbH + Co.Inventors: Ernst Luder, Traugott Kallfass, Masoud Habibi, Frank Hegner, Georg Schneider
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Patent number: 5455064Abstract: A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed in the bottom contact layer and is electrically isolated from remaining portions of the bottom contact layers by insulating plugs. A bottom contact metalization layer is applied to the surface of the bottom contact layers and the insulating plugs. A dielectric layer is formed on the surface of the bottom contact metalization layer. A ground metalization via and a power metalization via are formed at the surface of the dielectric layer.Type: GrantFiled: November 12, 1993Date of Patent: October 3, 1995Assignee: Fujitsu LimitedInventors: William T. Chou, Michael G. Peters, Wen-chou V. Wang, Richard L. Wheeler
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Patent number: 5442197Abstract: A super-capacitor comprising a positive electrode, a negative electrode, both made of a p-doped electron conductive polymer, and an electrolyte. The electrolyte comprises an organic redox compound soluble in the electrolyte in an amount of at least 10.sup.-3 mole per liter. The redox potential of the redox compound lies in a non-capacitive region of the electron conductive polymer. The redox compound is reduced in a reversible manner at the negative electrode when the potential of the negative electrode is equal to or less than the redox potential of the redox compound, and the redox compound is oxidized in a reversible manner at the positive electrode when the potential of the positive electrode is equal to or more than the redox potential of the redox compound.Type: GrantFiled: December 10, 1992Date of Patent: August 15, 1995Assignee: Alcatel Alsthom Compagnie Generale D'ElectriciteInventors: Xavier Andrieu, Laurence Kerreneur
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Patent number: 5390072Abstract: The invention relates to a method for forming a high capacitance thin film capacitor comprising forming an amorphous layer of a dielectric material on the surface of a polycrystalline layer of said dielectric material and arranging the resulting double layer between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.Type: GrantFiled: September 17, 1992Date of Patent: February 14, 1995Assignee: Research Foundation of State University of New YorkInventors: Wayne A. Anderson, Robert S. Hamilton, Quanxi Jia, Zhiqing Shi
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Patent number: 5384152Abstract: A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.Type: GrantFiled: June 1, 1993Date of Patent: January 24, 1995Assignee: International Business Machines CorporationInventors: Jack C. Chu, Louis Lu-Chen Hsu, Toshio Mii, Joseph F. Shepard, Scott R. Stiffler, Manu J. Tejwani, Edward J. Vishnesky
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Patent number: 5383088Abstract: A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor comprises a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition. A dielectric layer having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode is formed upon the dielectric layer.Type: GrantFiled: August 9, 1993Date of Patent: January 17, 1995Assignee: International Business Machines CorporationInventors: Jonathan D. Chapple-Sokol, Richard A. Conti, Jeffrey P. Gambino
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Patent number: 5380341Abstract: An electrochemical capacitor is prepared by assembling a stacked assembly of at least two bipolar electrodes, where each of the bipolar electrodes includes a metal foil electrode substrate having a porous, electronically conductive substrate coating, preferably porous platinum, on each surface. The stacked assembly further has a porous separator layer between each of the electrodes, made of a material that is electronically non-conductive. An ionic conductor electrolyte, preferably a polyoxometalate, that wets both the substrate coating and the separator layer at temperatures above the melting point of the solid ionic conductor electrolyte is provided, the ionic conductor electrolyte having a melting point above about 30.degree. C. The ionic conductor electrolyte is introduced into the stacked assembly, as by external infiltration with an optional applied pressure to assist the infiltration.Type: GrantFiled: September 27, 1993Date of Patent: January 10, 1995Assignee: Ventritex, Inc.Inventors: M. Dean Matthews, Pedro G. Medrano
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Patent number: 5372850Abstract: In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.Type: GrantFiled: February 17, 1993Date of Patent: December 13, 1994Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shin-ichi Kinouchi, Toshihisa Honda, Takeharu Kuroiwa, Hisao Watarai, Takashi Higaki
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Patent number: 5349494Abstract: A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.Type: GrantFiled: July 28, 1992Date of Patent: September 20, 1994Assignee: NEC CorporationInventor: Koichi Ando
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Patent number: 5334411Abstract: The invention is directed to an MLC manufacturing process in which the electrode paste is cast or printed onto a rigid substrate. The dried surface of the electrode is rendered smooth to remove surface asperities and the prints are then transferred to the dielectric substrate through a mask which patterns the electrode print on the surface.Type: GrantFiled: January 11, 1993Date of Patent: August 2, 1994Assignee: E. I. Du Pont de Nemours and CompanyInventor: John G. Pepin
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Patent number: 5326589Abstract: The invention provides a method of protecting an electronic or electric part by coating the part with a silicone rubber composition comprising an organopolysiloxane, an organohydrogenpolysiloxane, an addition reaction catalyst, and a filler. When metal oxide fine particles obtained by deflagration of metal powder dust in an oxygen-containing atmosphere are blended as the filler, the composition has sufficient purity to cover electronic and electric parts and cured products of the composition are improved in electrical properties and heat resistance, thereby protecting the electronic or electric part.Type: GrantFiled: February 4, 1993Date of Patent: July 5, 1994Assignee: Shin-Etsu Chemical Co., LtdInventors: Hiroshige Okinoshima, Toshio Shiobara, Tsutomu Kashiwagi
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Patent number: 5323520Abstract: A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed and a bottom contact metalization layer is applied to the surface of the bottom contact layers. A portion of the metalization layer is removed and an insulating layer is formed on the surface of the bottom contact metalization layer. A ground metalization feedthrough and a power metalization feedthrough are formed at the surface of the insulating layer. A sequence of top contact layers are applied to the surface of the insulating layer and a front side ground terminal and front side power terminal are formed.Type: GrantFiled: April 29, 1993Date of Patent: June 28, 1994Assignee: Fujitsu LimitedInventors: Michael G. Peters, William T. Chou, Wen-chou V. Wang, Michael G. Lee, Solomon I. Beilin
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Patent number: 5260094Abstract: Low porosity titania forms containing only a small amount of hydroxyl groups and possessing a high refractive index which are property stable regardless of humidity level and which prohibit electrical and gas leakage and optical loss, are obtained in a sol-gel process by rapidly heating to curing temperature, e.g. at a rate of 8000.degree. C./min. One application provides more stable, longer-lasting sol-gel prepared optical interference filters. Other applications provide capacitors with high capacitance and optical planar waveguides.Type: GrantFiled: October 26, 1992Date of Patent: November 9, 1993Assignee: Cornell Research Foundation, Inc.Inventors: Emmanuel P. Giannelis, Joseph L. Keddie
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Patent number: 5254360Abstract: A process for producing capacitors having thinner electrodes on dielectric substrates for use in multilayer ceramic capacitors which use less precious metal ink and produce thinner capacitors. Basically, the process begins with coating a support with a mixture of a finely divided ceramic material and a resin to form a green ceramic dielectric substrate of substantially uniform thickness but with a necessarily rough surface. A coating of resin is applied over the green ceramic to form a substantially smooth surface. A desired pattern in an ink comprising precious metal particles in a resin is formed, such as by silk screening, on the coated ceramic to form the electrode. Because of the smooth resin surface and finer metal particles, the ink coating may be relatively thin. The composite may then be fired to produce a capacitor suitable for use in monolithic multilayer capacitors.Type: GrantFiled: July 29, 1991Date of Patent: October 19, 1993Assignee: BMC Technology CorporationInventors: Joseph W. Crownover, Ben B. Meckel, Aubrey M. Burer
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Patent number: 5254371Abstract: This method comprises the following steps, which are compatible with thin-film technology: forming a bottom electrode (2) on an insulating substrate (1), depositing a humidity-sensitive polymer layer (5) of uniform thickness on the bottom electrode (2) leaving contact areas (3a, 3b) uncovered, activating surface bonds of the polymer layer (5), applying a colloidal dispersion of SiO.sub.2 or Al.sub.2 O.sub.3 particles (6) of uniform grain size as a thin layer to the polymer layer (5) and subsequently drying it, depositing a cover electrode (7) on the particles (6) still evenly distributed on the polymer layer (5) after the drying of the dispersion, and removing the particles (6) together with the portions of the cover electrode (7) overlying them.Type: GrantFiled: August 28, 1991Date of Patent: October 19, 1993Assignee: Endress u. Hauser GmbH u. Co.Inventors: Frank Hegner, Traugott Kallfass
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Patent number: 5230712Abstract: A method for making an electrochemical capacitor is disclosed. A plurality of bipolar electrodes having porous conductive oxide coatings on opposite sides of a thin metal foil are first produced in a fixture assembly using sol-gel processing techniques. A dielectric oxide coating is then applied to one or both conductive coatings using the sol-gel process. A stack of a plurality of the bipolar electrodes with adjacent electrodes separated by a predetermined amount of a solid electrolyte is assembled. The stacked assembly is heated to a temperature above the electrolyte melting point allowing the molten electrolyte to infiltrate the porous coatings. Pressure is applied to the stacked assembly sufficient to produce intimate contact between adjacent surfaces of the bipolar electrodes while expelling excess liquid from between the electrode surfaces. The stacked assembly is cooled in a controlled fashion to produce a laminate structure.Type: GrantFiled: September 28, 1992Date of Patent: July 27, 1993Inventor: M. Dean Matthews
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Patent number: 5219611Abstract: Low porosity titania forms containing only a small amount of hydroxyl groups and possessing a high refractive index which are property stable regardless of humidity level and which prohibit electrical and gas leakage and optical loss, are obtained in a sol-gel process by rapidly heating to curing temperature, e.g. at a rate of 8000.degree. C./min. One application provides more stable, longer-lasting sol-gel prepared optical interference filters. Other applications provide capacitors with high capacitance and optical planar waveguides.Type: GrantFiled: September 30, 1991Date of Patent: June 15, 1993Assignee: Cornell Research Foundation, Inc.Inventors: Emmanuel P. Giannelis, Joseph L. Keddie
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Patent number: 5172461Abstract: By means of this invention electrical resonant circuits, specifically resonance labels having a capacitor and a coil on a dielectric are produced for reliable deactivation by means of an electrical discharge between the capacitor surfaces. Heretofore aluminum threads produced from the material of the capacitor surfaces is not supported in place so that it can break with handling and vibration and cause reactivated of the resonant circuit leading to a false alarm in the safety system. According to this method a plurality of conductive bodies of a size in the micron range, e.g. copper dust is introduced in the dielectric so that a spark from discharge of a capacitor will cause an electrically conducting connection between the capacitor surfaces, which is embedded in a thread like shape in the dielectric. By using copper dust, an alloy is formed with the aluminum which evaporates during the spark discharge such that the thread produced has a substantially larger ductility than pure aluminum.Type: GrantFiled: August 12, 1991Date of Patent: December 22, 1992Inventor: Fritz Pichl
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Patent number: 5171645Abstract: A graded electrolyte of zirconia and bismuth oxide containing proposed surface regions one of which is rich in zirconia, the other rich in bismuth oxide is disclosed. The strength and reduction resistance of zirconia is combined with the high ionic conductivity of bismuth oxide to form a superior oxygen ion-conducting electrolyte which is especially useful in fuel cells.Type: GrantFiled: January 8, 1991Date of Patent: December 15, 1992Assignee: Gas Research Institute, Inc.Inventor: Ashok C. Khandkar
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Patent number: 5166759Abstract: The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides a material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 with excess Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component.Type: GrantFiled: September 28, 1990Date of Patent: November 24, 1992Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Iwao Ueno, Yasuo Wakahata, Kimio Kobayashi, Kaori Shiraishi, Akihiro Takami
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Patent number: 5160762Abstract: A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.Type: GrantFiled: May 29, 1991Date of Patent: November 3, 1992Assignee: U.S. Philips CorporationInventors: Hans-Wolfgang Brand, Mareike K. Klee, Johan W. C. De Vries, Rainer M. Waser, Robertus A. M. Wolters
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Patent number: 5120579Abstract: A method of bonding a dielectric material to a substrate comprising the steps of:I. providing a substrate;II. providing a dielectric composition comprising:(a) about 30% to about 100% by weight of a glass composition selected from the group consisting of:(a-1) a mixture of two glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585.degree. C. to about 620.degree. C. and a second glass composition having a glass transition temperature in the range of about 765.degree. C. to about 815.degree. C.; or(a-2) a mixture of three glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585.degree. C. to about 620.degree. C., a second glass composition having a glass transition temperature in the range of about 765.degree. C. to about 815.degree. C., and a third glass composition having a glass transition temperature in the range of about 650.degree. C. to about 720.degree. C.;III.Type: GrantFiled: August 23, 1991Date of Patent: June 9, 1992Assignee: Ferro CorporationInventors: Robert D. Gardner, Dineen M. Hopp Kolkowski, Aziz S. Shaikh, Gordon J. Roberts
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Patent number: 5116643Abstract: A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their respective solvents in proportions such that hydrolyze reaction rate for each metal precursor will be approximately equal. Preferably, the reaction is performed under an inert atmosphere at from about 350 mmHg to 650 mmHg pressure. The precursors and solvents are mixed, and water is added to begin a hydrolysis reaction. After the hydrolysis the solution is heated to drive off the excess water and solvent to promote the formation of a sol-gel. The sol-gel is then applied to a thin substrate and sintered to produce the ferroelectric film.Type: GrantFiled: December 19, 1990Date of Patent: May 26, 1992Assignee: National Semiconductor CorporationInventors: William D. Miller, Leo N. Chapin
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Patent number: 5087480Abstract: A moisture sensing element includes a moisture permeable gold electrode film formed on a moisture sensitive polyvinyl alcohol film which is carried by a glass substrate. The moisture permeable gold electrode film is formed by a vacuum evaporation under a nitrogen gas pressure of 1.0.times.10.sup.-3 Torr through 1.0.times.10.sup.-2 Torr. The deposition rate is about 0.5 .ANG./sec., and the moisture permeable gold electrode film has a thickness of 100 .ANG. through 200 .ANG..Type: GrantFiled: July 17, 1989Date of Patent: February 11, 1992Assignee: Sharp Kabushiki KaishaInventors: Junichi Tanaka, Hisatoshi Furubayashi, Masanori Watanabe
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Patent number: 5082627Abstract: A dielectric material of a capacitive affinity sensor has a three-dimensional molecular binding site array. A glass base is layered with a binding agent like silane from which a polymeric backbone like polylysine extends. The polymeric backbone is prepared to accept receptor molecules like cortisol hemisuccinate to bind a specific antibody. Such an array changes dielectric properties between the two electrodes of the capacitive affinity sensor to greatly enhance sensitivity of the sensor.Type: GrantFiled: May 1, 1987Date of Patent: January 21, 1992Assignee: Biotronic Systems CorporationInventor: William D. Stanbro
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Patent number: 5080966Abstract: Vias each having no pore are formed in a multilayer ceramic substrate by filling through holes of green sheets with conducting material obtained by: kneading mixed powder particles, adding copper oxide powder particles 50% (in weight) or less to copper powder particles, with a solution including methyl ethyl ketone and 0.5% (in weight) of isosulfonyltridecylbenzene titanate; drying and cracking the kneaded mixed powder particles, producing cracked mixed powder particles; classifying the cracked mixed powder particles with a 100 mesh filter, producing classified mixed powder particles; spheroidizing the classified mixed powder particles with a collision method performed in gases flowing at high speed; and firing the green sheets at a temperature of about 800.degree. C.Type: GrantFiled: January 9, 1991Date of Patent: January 14, 1992Assignee: Fujitsu LimitedInventor: Kenichiro Abe
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Patent number: 5063115Abstract: A polyimide coating composition comprising an homogeneous liquid solution of (a) a polyimide or polyimide precursor, (b) a substituted silane compound and (c) aprotic solvent.Type: GrantFiled: June 15, 1990Date of Patent: November 5, 1991Assignee: E. I. du Pont de Nemours and CompanyInventors: Burt T. Merriman, Jr., David L. Goff
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Patent number: 5028455Abstract: A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their respective solvents in proportions such that hydrolyze reaction rate for each metal precursor will be approximately equal. The precursors and solvents are mixed, and water is added to begin a hydrolysis reaction. After the hydrolysis the solution is heated to drive off the excess water and solvent to promote the formation of a sol-gel. The sol-gel is then applied to a thin substrate and sintered to produce the ferroelectric film.Type: GrantFiled: May 9, 1990Date of Patent: July 2, 1991Assignee: National Semiconductor CorporationInventors: William D. Miller, Leo N. Chapin, Joseph T. Evans, Jr.
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Patent number: 5019418Abstract: A self-healing metallized film capacitor has a dielectric sheet metallized with a metal or alloy so chosen to provide the desired sheet resistivity for a given metallization thickness. The invention applies to any metallized film capacitor in which electrode metallization thickness and clearability are important considerations.Type: GrantFiled: May 9, 1988Date of Patent: May 28, 1991Assignee: Sprague Electric CompanyInventors: Raynor Linzey, Herbert L. Rice
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Patent number: 4987009Abstract: A thick film complex electronic component mounted on a substrate including an inductance, capacitance and/or resistance by a conductive film and a magnetic film on a ceramic substrate is improved by novel magnetic film. The magnetic film is produced by depositing paste of a raw material of ferrite on the substrate, and the paste together with the substrate are sintered at a relatively low temperature in the range of 600.degree. C. and 1200.degree. C. The present magnetic film which is sintered after the raw material of ferrite is deposited on the ceramic substrate has higher permeability and is mechanically stronger.Type: GrantFiled: November 13, 1989Date of Patent: January 22, 1991Assignee: TDK CorporationInventors: Kiichi Nakamura, Masami Itakura, Yasuhiko Atsumi, Hideo Watanabe, Youiti Kanagawa
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Patent number: 4985098Abstract: Disclosed is a method of manufacturing a ceramic laminate which is adapted to manufacture a laminated ceramic capacitor, for example. This method includes the steps of stacking a plurality of ceramic green sheets containing ceramic powder and a first binder on a base and forming a metal paste film containing metal powder and a second binder for providing an internal electrode on an upper major surface of a prescribed one of the ceramic green sheets during the stacking step. In such a method, a junction member containing a solvent which can commonly dissolve the first and second binders is prepared in order to join the plurality of ceramic green sheets with no application of pressure, to be applied between adjacent pairs of plurality of ceramic green sheets, which are stacked with each other. The junction member joins the adjacent pairs of ceramic green sheets with each other through chemical action.Type: GrantFiled: February 16, 1989Date of Patent: January 15, 1991Assignee: Murata Manufacturing Co., Ltd.Inventors: Yoshiaki Kohno, Norio Sakai
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Patent number: 4969468Abstract: The electrode array is a device for making multiple electrical contacts with cellular tissue or organs. The electrode array includes a base (1), a two dimensional array of conducting protuberances (2) arising from the base and serving as electrodes, and conductors (3) embedded onto the base and connected to such protuberances for transmitting electrical signals to and/or from the protuberances. The protuberances may also include an insulating layer (15) which covers either the entire protuberance or which leaves the tips exposed for making focused electrical contact. Electrode arrays may be used used singly or in combination with a second electrode array so as to form a sandwich around a target tissue. The sandwich electrode array (16, 17) may employ indexing cones for aligning the opposing electrode arrays and for limiting their vertical proximity.Type: GrantFiled: January 24, 1989Date of Patent: November 13, 1990Assignee: Alfred E. Mann Foundation for Scientific ResearchInventors: Charles L. Byers, Joseph H. Schulman, David I. Whitmoyer
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Patent number: 4953283Abstract: A holder for holding a plurality of electronic component chips, each of which is provided with external terminal electrodes on both of longitudinal ends thereof, has a plurality of receiving portions defined by through holes for receiving respective ones of the electronic component chips one by one. An elastic member is formed on an inner peripheral surface defining each of the receiving portions, for elastically holding each of the electronic component chips. Each electronic component chip is received in each receiving portion to be longitudinally and crosswisely oriented toward a direction orthogonal to the axis of the receiving portion. This electronic component chip holder is advantageously employed to perform various operations such as measurement, marking, taping, magazinization and mounting of the electronic component chips.Type: GrantFiled: November 28, 1988Date of Patent: September 4, 1990Assignee: Murata Manufacturing Co., Ltd.Inventors: Shoichi Kawabata, Hisanao Tsuge, Hiromichi Wakatsuki
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Patent number: 4931897Abstract: A method of manufacturing a semiconductor capacitor provided with a substrate, a dielectric film formed on the substrate and a pair of electrode layers stacked on both sides of the dielectric film comprises a step of forming a polycrystalline silicon layer for serving as one of the electrode layers on the substrate, a step of making at least a surface region of the polycrystalline silicon layer amorphous, a step of forming the dielectric film on the polycrystalline silicon layer while maintaining an amorphous surface state, and a step of forming another one of the electrode layers on the dielectric film. The lower electrode of the capacitor has its surface or the whole layer made amorphous. The surface of the electrode which is amorphous has smooth surface configuration, thereby improving the quality of the dielectric film formed thereon.Type: GrantFiled: August 7, 1989Date of Patent: June 5, 1990Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Katsuhiro Tsukamoto, Masahiro Shimizu, Hiroshi Miyatake
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Patent number: 4911992Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.Type: GrantFiled: December 4, 1986Date of Patent: March 27, 1990Assignee: Dow Corning CorporationInventors: Loren A. Haluska, Keith W. Michael, Leo Tarhay
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Patent number: 4861624Abstract: An end surface (5, 5b) of a cylindrical ceramic body (2, 2b) is dipped into a bath of metal paste (15), so that an opening (10, 10b) formed in the end surface is closed by the metal paste. Then an air pressure difference is provided such that the air pressure in an inner space (9, 9b) of the ceramic body is lower than the air pressure in an outer space (19, 19b) surrounding the ceramic body, whereby the surface of the metal paste located in the inner space is upwardly moved. Thus, a substantial region of an inner peripheral surface (7, 7b) of the ceramic body is brought into contact with the metal paste. Then the pressure difference is cancelled so that a metal paste film (21, 21a, 21b) for serving as an inner electrode (3, 3a, 3b) of a cylindrical capacitor (1, 1a, 1b, 1c) is formed on the inner peripheral surface.Type: GrantFiled: August 24, 1987Date of Patent: August 29, 1989Assignee: Murata Manufacturing Co., Ltd.Inventors: Shuzou Matsuda, Satoomi Naitou, Takahiro Wakano
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Patent number: 4837049Abstract: A very small electrode array is disclosed, having numerous, small, sharp, conductive protuberances (needles) which penetrate nerves, organs, muscle or other body part for sensing the electrical activity therein or to provide electrical stimulation. The protuberances are carried on a base and there is included electrical conductors connecting the protuberances to terminals, such as bonding pads, for connection to other electrical circuits. Thus, a method of connecting to living tissue is disclosed. Also, a method of manufacture of an electrode array and associated circuitry is disclosed.Type: GrantFiled: June 17, 1986Date of Patent: June 6, 1989Assignee: Alfred E. Mann Foundation for Scientific ResearchInventors: Charles L. Byers, Joseph H. Schulman, David I. Whitmoyer
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Patent number: 4822638Abstract: A process for fabricating an electronic device on a non-conductive polymer substrate, particularly from the family of polyaniline, comprises applying a covalent doping agent, such as an R.sup.+ donor compound, where R is an organic group, e.g., methyl iodide, to a preselected portion of a base-type non-conductive polymer substrate containing carbon-nitrogen linkages, and converting such preselected portion of the polymer substrate to an electrically conductive polymer portion, by covalent linkage of the R groups of such donor compound, to nitrogen atoms of the non-conductive polymer substrate. Electronic devices, such as resistors, capacitors, inductors, printed circuits and the like, can be provided by the invention process, in the form of light-weight polymers containing no metal, and which are stable and wherein the conductive portions are non-diffusing.Type: GrantFiled: February 11, 1987Date of Patent: April 18, 1989Assignee: Lockheed CorporationInventor: Stuart I. Yaniger
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Patent number: 4794019Abstract: Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240.degree.-400.degree. C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.Type: GrantFiled: October 22, 1987Date of Patent: December 27, 1988Assignee: Applied Materials, Inc.Inventor: Nicholas E. Miller
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Patent number: 4756928Abstract: Thin film electrodes are formed on a chip-type electronic component for connecting to external circuitry.The electronic components is first located so that a first principal plane thereof faces toward a scattering source of an electrode-forming. The first principal plane is covered with a mask except for a pair of edge portions of the first principal plane, which extend a little toward the center of the first principal plane from a pair of first edges. The first edges are respectively defined by the first principal plane and two opposing end planes of the component.A thin film of the electrode material is deposited on each of the edge portions of the first principal plane, on the first edges, and on first portions of the end planes, which extend onto the end planes from the first edges.Then the electronic component is located so that a second principal plane counter to the first principal plane faces toward the scattering source.Type: GrantFiled: December 10, 1985Date of Patent: July 12, 1988Assignee: Murata Manufacturing Co., Ltd.Inventors: Atsuo Senda, Takuji Nakagawa
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Patent number: 4756977Abstract: This invention relates to materials produced by diluting in a solvent a hydrogen silsesquioxane resin solvent solution which is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.Type: GrantFiled: December 3, 1986Date of Patent: July 12, 1988Assignee: Dow Corning CorporationInventors: Loren A. Haluska, Keith W. Michael, Leo Tarhay
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Patent number: 4749631Abstract: This invention relates to materials produced by diluting in a solvent a preceramic mixture of a partially hydrolyzed silicate ester which is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.Type: GrantFiled: December 4, 1986Date of Patent: June 7, 1988Assignee: Dow Corning CorporationInventors: Loren A. Haluska, Keith W. Michael, Leo Tarhay
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Patent number: 4749591Abstract: Said device comprises among other things, a metallizing apparatus through which is made to pass the plastic film (15) whereon the metallizing layer is to be deposited, and a new oil-delivery unit (21) which deposits a layer of oil onto the areas of the film which are to remain non-metallized. The oil delivery unit (21) evaporator is positioned so that the thin layer of oil only adheres to the film in a clearly defined area. The oil has been selected with great care from those available for sale.Type: GrantFiled: April 23, 1987Date of Patent: June 7, 1988Assignee: Metalvuoto Films S.p.A.Inventor: Pietro Ronchi
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Patent number: 4743464Abstract: According to the process, there is applied to one face of a relatively rigid isolating support (1) a first matrix arrangement of areas (3) connected by conductor tracks of lines (4). Said arrangement is coated with a thin layer of isolating lacquer (5) and a second matrix arrangement of areas (6) is set in place on the lacquer layer with their conductor tracks of columns (7) to obtain, by bringing together an armature towards each stud comprised of two areas (3, 6), a capacitive connection.Type: GrantFiled: December 4, 1985Date of Patent: May 10, 1988Inventors: Jean L. Larguier, Daniel Duchalet
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Patent number: 4735824Abstract: A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.Type: GrantFiled: May 23, 1986Date of Patent: April 5, 1988Assignee: Kabushiki Kaisha ToshibaInventors: Kikuo Yamabe, Keitaro Imai
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Patent number: 4735823Abstract: An organic semiconductor electrolyte capacitor and a process for producing such a capacitor having improved loss and impedance characteristics and which can be produced using a simple apparatus and with reduced waste of expensive materials. A dielectric oxide film is formed on the surface of a metal anode, and a solid-electrolyte layer is formed on the dielectric oxide film. The electrolyte layer is made by melting and solidifying a mixture of an isopropylisoquinolinium tetracyanoquinodimethane complex salt and a lactone compound.Type: GrantFiled: September 15, 1986Date of Patent: April 5, 1988Assignee: Nippon Chemi-Con CorporationInventors: Takato Ito, Akihiro Shimada, Kimio Uchiyama
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Patent number: 4720393Abstract: For the manufacture of an electrically conducting layer in the form of a coating on a base or in the form of a free bearing film, a liquid product is prepared consisting of water, a water-soluble polymer dissolved therein, a pyrrole compound dissolved in the water or present therein in undissolved state in the form of pyrrole, N-methylpyrrole or a mixture of pyrrole and N-methylpyrrole and a substance dissolved therein, such as a ferric compound, with the ability to give an electrically conducting polymerized pyrrole upon polymerization of the pyrrole compound. When the pyrrole compound in the liquid product has been transformed into a polymerized pyrrole, the liquid product is applied on a base and the water is thereafter brought to depart while leaving a layer on the base. The layer can be left as a permanent coating on the base or be removed from there while forming a free bearing film.Type: GrantFiled: October 8, 1986Date of Patent: January 19, 1988Assignee: ASEA AktiebolagInventor: Robert Bjorklund
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Patent number: 4717595Abstract: A molded carbonaceous material which is a molded mixture comprising a carbonaceous powder and a binder, particles of said carbonaceous powder particles being bound together by means of said binder with the surface of said carbonaceous powder being not wholly covered with said binder.Type: GrantFiled: November 17, 1986Date of Patent: January 5, 1988Assignee: Murata Manufacturing Co., Ltd.Inventors: Koichi Watanabe, Michinobu Maesaka, Michihiro Murata