Abstract: A large-area transparent conductive element easy to form a fine pattern includes a substrate having a surface, and transparent conductive portions and transparent insulating portions that are alternately provided on the surface in a planar manner. At least one type of unit section including a random pattern is repeated in at least either the transparent conductive portions or the transparent insulating portions.

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract: In an immersion lithography apparatus in which immersion liquid is supplied to a localized space, the space is substantially polygonal in plan substantially parallel to the substrate. In an embodiment, two corners of the space have a radius of curvature no greater than the width of a transition zone between the space configured to contain liquid and a surrounding configured not to contain liquid.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: The present application relates to a photoactive compound including an oxime ester group and a phosphonate group together, and a photosensitive resin composition comprising the same, the compound of the present application having excellent storage stability and high-temperature process characteristics.

Abstract: A resist composition containing a base component (A) which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a copolymer (A1) having a structural unit (a0) containing a group represented by the following general formula (a0-1) or (a0-2), a structural unit (a11) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a polycyclic group, and a structural unit (a12) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a monocyclic group. Each of the groups —R3—S+(R4)(R5) and Mm+ in the formula has only one aromatic ring as a whole or has no aromatic ring.

Abstract: According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.

Abstract: A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Abstract: A photosensitive negative resin composition containing a resin (a) having at least three cyclohexene oxide skeletons in its molecule, an onium salt (b) composed of a cation moiety structure represented by the formula b1 defined in the description and an anion moiety structure represented by the formula b2 defined in the description, a silane compound (c) and an organic solvent (d). A fine structure using the resin composition, a production process of the fine structure and a liquid ejection head.

Abstract: The present invention relates to a printing element comprising at least one polymer layer on a substrate which has photoimageable constituents and a chemically functionalized polymer to make the polymer layer either more hydrophobic or hydrophilic. In one embodiment of the present invention, the printing element comprises two adjacent polymer layers on a substrate in which the photoimaged layer comprises a polymer chemically modified with hydrophobic fluoroalkyl side groups to provide differential wetting with hydrophilic inks.

Abstract: Fabricating of one or more semiconductor devices with critical gate dimension control is facilitated by: providing a multilayer stack structure over a substrate; etching through the multilayer stack structure, with critical gate dimension control, to define multiple gate lines; providing a protective layer over the multiple gate lines; and patterning and cutting one or more gate lines of the multiple gate lines to facilitate defining multiple gate structures of the one or more semiconductor devices. Etching through the multilayer stack structure is facilitated by lithographically patterning the multilayer stack structure, and critical dimension feedback control is provided to at least one of the lithographically patterning or the etching through the multilayer stack structure.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract: The present invention relates to a photoactive compound having a novel structure and a photosensitive resin composition including the same, and the photoactive compound according to the present invention has excellent sensitivity due to efficient absorption to a UV light source by including a nitro group and a phosphonate structure, and has excellent retention rate, mechanical strength, heat resistance, chemical resistance and developing resistance by improving solubility of the photosensitive resin composition by excellent compatibility of the phosphonate structure and a binder resin. Therefore, the photosensitive resin composition according to the present invention is useful to cure a column spacer, an overcoat, a passivation material and the like of a liquid crystal display device, and is useful in view of a high temperature process property.

Abstract: An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation.

Abstract: A scaffold includes struts that intersect at nodes. In some instances, a cross section of the cores has at least one dimension less than 100 microns. The core can be a solid, liquid or a gas. In some instances, one or more shell layers are positioned on the core.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.

Abstract: A sulfur-containing macromolecule and a method of preparing the sulfur-containing macromolecule comprising a polymerization step are provided, where the sulfur-containing macromolecule contains internal units of formula (I) and the polymerization step is formula (II) wherein n is greater than 1, said precursor comprises alkyne having one or more acetylene groups and thiol having one or more thiol groups; and R is remainder of said thiol excluding said thiol groups, R? is remainder of said alkyne excluding said acetylene groups, and R and R? are selected from organic or organometallic groups.

Abstract: Novel photo-writable and thermally switchable polymeric materials exhibit a refractive index change of ?n?1.0 when exposed to UV light or heat. For example, lithography can be used to convert a non-conjugated precursor polymer to a conjugated polymer having a higher index-of-refraction. Further, two-photon lithography can be used to pattern high-spatial frequency structures.

Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

Abstract: The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.

Abstract: According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.

Abstract: Examples of novel semiconductor processing pedestals, and apparatuses including such pedestals, are described. These pedestals are specifically configured to provide uniform heat transfer to semiconductor substrates and to reduce maintenance complexity and/or frequency. Specifically, a pedestal may include a removable cover positioned over a metal platen of the pedestal. The removable cover is configured to maintain a consistent and uniform temperature profile of its substrate-facing surface even though the platen's upper-surface, which supports the cover and is in thermal communication with the cover, may have a much less uniform temperature profile. The cover may be made from certain ceramic materials and shaped as a thin plate. These materials are resistant to the processing environments and maintain their thermal characteristics over many processing cycles. The cover can be easily removed from the platen and replaced with a new one without a need for major disassembly of the entire apparatus.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: The present invention provides a holder for holding a substrate, the holder including a base to be received by a table, the base including a first surface arranged to receive the substrate to be held by the holder and a second surface opposite to the first surface, a first support provided on the second surface and arranged to surround a through hole formed in the base and configured to contact the table, a second support provided on the second surface and arranged to surround the first support and to contact the table, and a plurality of first pins provided in a region of the second surface between the second support and an outer edge of the base and arranged to contact the table.

Abstract: A manufacturing method of microstructure comprises steps of: a motion determination step which determines the motion of a substrate relative to at least a photomask; a microlens determination step which determines the profile of a microlens unit on the substrate; an analysis step which calculates the feature of the photomask according to the motion of the substrate and the profile of the microlens unit by using a numerical analysis method; a production step which produces the photomask according to the feature of the photomask; driving the substrate to do the motion determined in the motion determination step, and meanwhile making a laser light illuminate the substrate through the photomask to manufacture the microlens unit on the substrate by the superposition effect of the laser light; and performing a photolithography process by using the microlens unit to produce a microstructure on a photoresist substrate.

Abstract: A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.

Abstract: A catalyst precursor resin composition includes an organic polymer resin; a fluorinated-organic complex of silver ion; a monomer having multifunctional ethylene-unsaturated bonds; a photoinitiator; and an organic solvent. The metallic pattern is formed by forming catalyst pattern on a base using the catalyst precursor resin composition reducing the formed catalyst pattern, and electroless plating the reduced catalyst pattern. In the case of forming metallic pattern using the catalyst precursor resin composition, a compatibility of catalyst is good enough not to make precipitation, chemical resistance and adhesive force of the formed catalyst layer are good, catalyst loss is reduced during wet process such as development or plating process, depositing speed is improved, and thus a metallic pattern having good homogeneous and micro pattern property may be formed after electroless plating.

Abstract: The present disclosure provides methods of fabricating a biochip. The biochip includes a fluidic part, having through-substrate holes as inlets and outlets, and a sensing part bonded together using a bonding material. One or both of the parts has microfluidic channel patterns and one or more patterned surface modification layers formed using different methods to provide surface property for binding bioreceptors and for flowing analytes. The patterning includes lithography, etching, washing, selective depositing using printing or self-assembly of surface chemistry.

Abstract: Photoactive additives are disclosed. The additive includes a benzophenone having at least one substituent that comprises a divalent linker and a linking group, wherein the linking group is a carboxyl group, ester group, or acid halide group. The additive can be a polymer, an oligomer, or a compound. When added to a base polymeric resin, the photoactive additive permits crosslinking upon exposure to ultraviolet light.

Abstract: Block copolymer-based mask structures for the growth of patterned polymer brushes via surface-initiated atom transfer radical polymerization (SI-ATRP) are provided. Also provided are methods of making the mask structures and methods of using the mask structures to grow patterned polymer brushes. The mask structures comprise a substrate having a surface, a neutral layer comprising a crosslinked copolymer film disposed on the surface of the substrate and a domain-forming block copolymer film disposed on the crosslinked copolymer film. The crosslinked copolymer film comprises crosslinked random copolymer chains having pendant alkyl halide functional groups that are capable of acting as ATRP initiating sites.

Abstract: An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method comprises providing at least two mask areas having a same pattern, forming a resist layer over a substrate, determining an optimized exposure dose based on an exposure dose for a pre-specified pattern on one of the at least two mask areas to achieve a pre-specified target dimension under a corresponding single exposure process, and performing a multiple exposure process for exposing a same area of the resist layer to the same pattern. The multiple exposure process comprises a plurality of exposure processes, wherein each of the plurality of exposure processes uses an exposure dose that is less than the optimized exposure dose and a sum of the exposure dose of each of the plurality of exposure processes is approximately equal to the optimized exposure dose.

Abstract: An extreme ultraviolet lithography (EUVL) process is performed on a target, such as a semiconductor wafer, having a photosensitive layer. The method includes providing a one-dimensional patterned mask along a first direction. The patterned mask includes a substrate including a first region and a second region, a multilayer mirror above the first and second regions, an absorption layer above the multilayer mirror in the second region, and a defect in the first region. The method further includes exposing the patterned mask by an illuminator and setting the patterned mask and the target in relative motion along the first direction while exposing the patterned mask. As a result, an accumulated exposure dose received by the target is an optimized exposure dose.

Abstract: A method for being used in a lithography process is provided. The method includes receiving a first mask, a second mask and a substrate with a set of baseline registration marks. A first set of registration marks is formed on the substrate using the first mask and a first exposure tool, and a first set of overlay errors is determined. The first set of registration marks is removed and a second set of registration marks is formed on the substrate using the second mask and a second exposure tool. A second set of overlay errors is determined. A set of tool-induced overlay errors is generated from the first and second sets of overlay errors and used in fabricating a third mask. The third mask can then be used in the lithography process to accommodate the overlay errors caused by different exposure tools, different masks, and different mask writers.

Abstract: A method and a system for producing a change in a medium. The method places in a vicinity of the medium an energy modulation agent. The method applies an initiation energy to the medium. The initiation energy interacts with the energy modulation agent to directly or indirectly produce the change in the medium. The energy modulation agent has a normal predominant emission of radiation in a first wavelength range outside of a second wavelength range (WR2) known to produce the change, but under exposure to the applied initiation energy produces the change. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the energy modulation agent.

Abstract: A photo resist layer includes a first region and a second region. A treatment layer is applied to the photo resist layer.

Abstract: The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Abstract: A three-dimensional lattice architecture with a thickness hierarchy includes a first surface and a second surface separated from each other with a distance therebetween defining a thickness of the three-dimensional lattice architecture; a plurality of angled struts extending along a plurality of directions between the first surface and the second surface; a plurality of nodes connecting the plurality of angled struts with one another forming a plurality of unit cells. At least a portion of the plurality of angled struts are internally terminated along the thickness direction of the lattice structure and providing a plurality of internal degrees of freedom towards the first or second surface of the lattice architecture.

Abstract: Pellicles for photomasks used in photolithographic manufacturing are described. A frame of a pellicle may include a recess formed in a side member and a locking member dimensioned to secure a membrane to the frame when the membrane is disposed between the recess and the locking member. A pellicle may be secured to a photomask using non-adhesive attachment members that contact a side surface of the photomask.

Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.

Abstract: Disclosed is a positive photosensitive resin composition which is characterized by containing (a) a polysiloxane that is synthesized by hydrolyzing and partially condensing a specific organosilane and an organosilane oligomer, (b) aluminum compound particles, tin compound particles, titanium compound particles, zirconium compound particles, composite particles of the aforementioned compounds or composite particles of any of the aforementioned compounds and a silicon compound, (c) a naphthoquinonediazide compound and (d) a solvent. The positive photosensitive resin composition is also characterized in that the organosilane oligomer contains a specific organosilane. The positive photosensitive resin composition has achieved excellent sensitivity and resolution without deteriorating high refractive index and high transparency.

Abstract: There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

Abstract: A method for providing an ordered polymer layer at a surface of a substrate includes depositing a self-assemblable polymer layer directly onto a primer layer on a substrate to provide an interface between the self-assemblable polymer layer and the primer layer, and treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer, such as a block copolymer, having first and second domain types at the interface. The primer layer is adapted to improve its chemical affinity to each domain type at the interface, in response to the presence of the respective domain type in the self-assembled polymer at the interface during the self-assembly of the self-assemblable polymer layer into the ordered polymer layer. This may lead to reduction in defect levels and/or improved persistence length for the ordered polymer layer. The method may be useful for forming resist layers for use in device lithography.

Abstract: A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value ? of from 5.0 to 30.0. The contrast value ? is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.

Abstract: In the field of photolithography and, notably, photolithography in the extreme ultraviolet, a photolithography method is provided in which a first mask blank is produced that can have defects, an individual mapping of the positions of the defects of this mask blank is established using an inspection machine, and, for each defect, an exclusion zone is defined around the defect. Then, two complementary masks are produced, one with the first mask blank and with the desired design pattern, except in the exclusion zones, the latter being black, the other with a second mask blank and with the desired design pattern parts in the exclusion zones, all the rest of the second mask being black. The exposure of the surface to be processed by photolithography is done in two successive steps using the two complementary masks.

Abstract: According to one embodiment, provided is a reflective mask having a substrate, a reflection layer that reflects EUV light formed above the substrate, and an absorption layer that absorbs the EUV light formed above the reflection layer. The reflective mask further includes a monitor pattern monitoring an attachment amount of contamination attached during exposure.

Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.