Abstract: Disclosed is a coating and developing apparatus including (a) a first liquid process module to sequentially perform a first liquid process by a first chemical liquid, and a second liquid process by the first chemical liquid again; (b) a buffer module to sequentially store the respective substrates which have been subjected to the first liquid process and have not yet been subjected to the second liquid process; and (c) a second liquid process module to sequentially perform a third liquid process by a second chemical liquid. In particular, the third liquid process to be performed on a first substrate of the substrate group is started before the first liquid process performed on a last substrate of the substrate group is ended, in such a manner that right after the first liquid process is performed on the last substrate, the second liquid process is to be performed on the first substrate.

Abstract: A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R1 is hydrogen atom, fluorine atom, etc., R2 and R3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R4 and R5 independently hydrogen atom, fluorine atom, etc., R6 is hydrogen atom, fluorine atom, etc., R7 and R8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R9 is alkyl group having 1 to 4 carbon atoms, etc., R10 is hydrogen atom, etc., A? is —N?—SO2—Ra, etc., and X+ is onium cation.

Abstract: The present invention provides a guide apparatus including a guide member located on a base, and a moving member movable along the guide member. The guide apparatus comprising a plurality of plate members each including a portion facing the base and extending from the portion in a direction to separate from the base, wherein the plurality of plate members are located apart from each other in a direction to separate from the moving member.

Abstract: The present invention provides a charged particle optical system which emits a charged particle beam, the system including an electrostatic lens, and a grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens, wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface.

Abstract: A photosensitive resin composition is used that comprises a photosensitive silicone having a styryl group as a photosensitive group, and a photopolymerization initiator having a specific structure. As a result, a photosensitive resin composition capable of being cured in air by photopolymerization that is preferable for use as a buffer coat material or rewiring layer of an LSI chip, a method for forming a cured relief pattern using this photosensitive resin composition, and a semiconductor device comprising the cured relief pattern are provided.

Abstract: There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X?1.0 (nm/second) or more and 0.0667X?1.6 (nm/second) or less.

Abstract: The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

Abstract: To provide a negative photosensitive resin composition which is excellent in storage stability of silanol groups and which is applicable to preparation of partition walls which can maintain excellent ink repellency even after ink affinity-imparting treatment, and partition walls for an optical device using such a composition. A negative photosensitive resin composition comprising an ink repellent (A) made of a fluorosiloxane compound having a hydroxy group bonded to a silicon atom and containing fluorine atoms in a proportion of from 10 to 55 mass % based on the total amount of the compound, a photosensitive resin (B) having an acidic group and an ethylenic double bond in one molecule, a photopolymerization initiator (C) and a solvent (D), wherein the proportion of the ink repellent (A) is from 0.01 to 10 mass % based on the total solid content of the composition, and the proportion of the hydroxy groups bonded to a silicon atom derived from the ink repellent (A) is from 0.000001 to 1.

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

Abstract: A method for generating, via a computer, a mask pattern to be used for an exposure apparatus that exposes an image of the mask pattern on a substrate by irradiating a mask includes obtaining data of a main pattern to be formed on the substrate, and data of a pattern of a lower layer of a layer to which the main pattern is transferred, setting a generation condition for an auxiliary pattern with respect to the main pattern using data of the pattern of the lower layer, determining the auxiliary pattern using the generation condition, and generating data of the mask pattern including the main pattern and the determined auxiliary pattern.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R? is a group of structure (2), R? is independently selected from hydrogen, a moiety of structure (2), Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y? is independently a (C1-C20) hydrocarbylene linking moiety, where structure (2) is where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition.

Abstract: A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.

Abstract: Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.

Abstract: A photoacid generating polymer (PAG polymer) comprises i) a first repeat unit of capable of reacting with a photogenerated acid to form a carboxylic acid containing repeat unit, ii) a second repeat unit of capable of forming the photogenerated acid, and iii) a third repeat unit comprising a norbornyl ester, wherein a norbornyl ring of the norbornyl ester comprises a monovalent substituent having the formula *-L?-C(CF3)2(OH). L? is a divalent linking group comprising at least one carbon and the starred bond of L? is linked to the norbornyl ring. The first repeat unit, second repeat unit, and the third repeat unit are covalently bound repeat units of the PAG polymer.

Abstract: A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.

Abstract: There is provided a resist composition including a polymeric compound (A1) containing a structural unit derived from a compound represented by general formula (a0-m), and a method of forming a resist pattern using the resist composition. In the formula, R1 represents a polymerizable group; Y1 represents a hydrocarbon group of 1 to 30 carbon atoms; L1 represents a single bond or a carbonyl group; Y2 represents a divalent linking group, and R2 represents a hydrogen atom or a hydrocarbon group, provided that Y2 and R2 may be mutually bonded to form a ring with the nitrogen atom having Y2 and R2 bonded thereto; R3 represents a hydrogen atom or a hydrocarbon group; Y3 represents a group which forms an aromatic ring together with the two carbon atoms having Y3 bonded thereto, provided that the aromatic ring may have a nitro group or a substituent other than the nitro group bonded to the aromatic ring.

Abstract: A radiation-sensitive resin composition includes a polymer component that includes one or more types of polymers, and a radiation-sensitive acid generator. At least one type of the polymer of the polymer component includes a first structural unit represented by a following formula (1). R1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R2 represents a linear alkyl group having 5 to 21 carbon atoms. Z represents a divalent alicyclic hydrocarbon group or an aliphatic heterocyclic group having a ring skeleton which has 4 to 20 atoms. A part or all of hydrogen atoms included in the alicyclic hydrocarbon group and the aliphatic heterocyclic group represented by Z are not substituted or substituted.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resist composition including a base component that exhibits changed solubility in a developing solution under the action of acid, the base component containing a resin component having a structural unit represented by general formula (a0-1) shown below: in which R1 represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, R2 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and X represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom.

Abstract: A method of producing a polymeric compound having a structural unit that is decomposed and generates acid upon exposure, including reacting a first precursor polymer having a first ammonium cation with an amine whose conjugate acid has an acid dissociation constant (pKa) larger than that of the first ammonium cation to obtain a second precursor polymer having a second ammonium cation that is a conjugate acid of the amine; and performing a salt-exchange between the second precursor polymer and a sulfonium cation or an iodonium cation, in which the second ammonium cation is less hydrophobic than the first ammonium cation, and also less hydrophobic than the sulfonium cation or the iodonium cation.

Abstract: Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent.

Abstract: The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.

Abstract: A technique generating sloping resist profiles based on an exposure process uses a reticle having structures surrounded with first and second contrasting interleaved bands below the resolution limit of the stepper used to expose the resist. Exemplary embodiments include a reticle having interleaved, non-overlapping transparent and opaque bands surrounding a transparent feature with an innermost one of the opaque bands bordering the structure, such as a via opening or a metal conductors pattern, resulting in the patterned photoresist having sloped or tapered sides with consistent reproducibility. The slope in the photoresist is then transferred to the underlying layer during an etch using the tapered photoresist as a mask. Alternatively, the sloped resist can have a negative slope angle for patterning metal conductors using a metal lift-off technique.

Abstract: A undercoat agent used for performing phase separation of a layer formed on a substrate and containing a block copolymer having a plurality of blocks bonded, wherein the undercoat agent contains a resin component, the resin component is formed from a structural unit having an aromatic ring and a structural unit not having an aromatic ring, and the resin component has a group that can interact with the substrate, and also has a 3 to 7-membered, ether-containing cyclic group.

Abstract: The invention provides a photo-patternable multifunctional polymer nanocomposite. The nanocomposite comprises a solvent suspension of multiferroic nanostructures uniformly dispersed in SU-8 polymer matrix. The invention also provides a composite comprising a substrate and a photo-patterned multifunctional polymer nanocomposite layer formed on the substrate. The nanocomposite layer comprises a UV-photolithographed SU-8 polymer having a solvent suspension of multiferroic nanostructures uniformly dispersed in the polymer matrix.

Abstract: A resist polymer (Y?), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y?): [Chemical formula 1] in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (A) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; W represents —COO—, a —CONH— group or a divalent aromatic hydrocarbon group; Y1 and Y2 represent a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A method for isolating microstructural regions or features on a surface for electrochemical experimentation comprising polishing a metal sample, coating the metal sample with a photoresist, selecting a region of interest of the metal sample, exposing the region of interest with light energy, developing the exposed photoresist and creating a developed region.

Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y1 and Y2 represents a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) composed of a compound having a base dissociable group within a cation moiety.

Abstract: A radiation-sensitive resin composition includes an acid generating agent to generate an organic acid by irradiation with a radioactive ray. The organic acid has a cyclic hydrocarbon group and an organic group including a bond that is cleavable by an acid or a base to produce a polar group. The organic acid is preferably represented by a following formula (I). Z represents an organic acid group. R1 represents an alkanediyl group, wherein a part or all of hydrogen atoms of the alkanediyl group represented by R1 are optionally substituted by a fluorine atom. X represents a single bond, O, OCO, COO, CO, SO3 or SO2. R2 represents a cyclic hydrocarbon group. R3 represents a monovalent organic group having a functional group represented by a following formula (x). n is an integer of 1 to 3.

Abstract: New photoresist compositions are provided that comprise a component that comprises two or more amide groups.

Abstract: According to one embodiment, a photomask includes a mask substrate transparent to light, a light shielding pattern formed on the mask substrate, and a thin film portion that is provided at a part of the light shielding pattern and is thinned to have a higher light transmittance than the light shielding pattern, in which the thin film portion is arranged with respect to a light shielding pattern that is sensitive to a focus shift so that a sensitivity becomes stable and is not arranged with respect to a light shielding pattern whose sensitivity to a focus shift is stable.

Abstract: The invention includes a novel light-activated polymerizable composition, wherein reversible crosslinks may be converted into irreversible crosslinks using a fully controllable physical and/or chemical process. The invention further includes methods of photofixing a light sensitive material or patterning an article comprising a light sensitive material.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and an organic solvent component (S), the organic solvent component (S) containing an organic solvent (S1) including a compound represented by general formula (s-1) shown below and the acid-generator component (B) being an onium salt (in the formula, X represents a single bond or an alkylene group of 1 to 3 carbon atoms; and n represents an integer of 0 to 3).

Abstract: An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

Abstract: A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.

Abstract: Collapse of resist patterns in the formation of resist patterns that employ chemically amplified resist material is suppressed. A method for forming a resist pattern includes the steps of: coating a substrate with a chemically amplified resist material; exposing the resist material; and developing the exposed resist material, to form a resist pattern having an aspect ratio AR of 1.5 or greater in a resist film formed by the resist material. A close contact process that improves close contact properties between the substrate and the resist film is controlled such that the thickness of residual film of the resist film is greater than or equal to 1 nm and less than or equal to 1.83·AR+1.73 nm.

Abstract: An exposure apparatus is provided and adapted for exposing a photoresist layer on a layer to form a plurality of strip exposed patterns. The exposure apparatus includes a light source, a lens group and a mask. The lens group is disposed between the photoresist layer and the light source and includes a plurality of strip lens parallel to each other, wherein an overlapping region between any two neighboring strip lens is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as lens regions. The mask is disposed between the photoresist layer and the lens group and includes a plurality of shielding patterns, wherein an outline of the shielding patterns corresponds to the strip exposed patterns, each shielding pattern has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns.

Abstract: A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier.

Abstract: Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.

Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.

Abstract: Compounds of the formula (I) and (II) M1, M2 and M3 independently of one another are no bond, a direct bond, CO, O, S, SO, SO2 or NR14; provided that at least one of M1, M2 or M3 is a direct bond, CO, O, S, SO, SO2 or NR14; M4 is a direct bond, CR?3R?4, CS, O, S, SO, or SO2; Y is S or NR18; R1 for example is hydrogen, C3-C8cycloalkyl, phenyl or napthyl, both of which are optionally substituted; R2 for example is C1-C20alkyl; R?2 has one of the meanings given for R2; R3 and R4 are for example hydrogen, halogen, C1-C20alkyl; R?3, R?4, R?3 and R?4 independently of one another have one of the meanings given for R3 and R4; and R5 is for example hydrogen, halogen, C1-C20alkyl; provided that in the compounds of the formula (I) at least two oxime ester groups are present and provided that at least one specified substituent R2 or R?2 is present; exhibit an unexpectedly good performance in photopolymerization reactions.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer and a radiation-sensitive acid generator. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

Abstract: A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R1 represents a divalent linking group; R2 represents an arylene group which may have a substituent, and each of R3 and R4 independently represents an aryl group which may have a substituent; R3 and R4 may be mutually bonded with the sulfur atom to form a ring; R5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

Abstract: Compositions are disclosed having the formula (3): [C?]k[Ta(O2)x(L?)y]??(3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L?)y has a charge of 0 to ?3, C? is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L? is an oxidatively stable organic ligand having a charge of 0 to ?4, and L? comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

Abstract: A resist composition including a base component which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and an organic solvent component, the base component containing a resin component having a structural unit which generates acid, and the organic solvent component containing an organic solvent component including a compound represented by general formula (s-1) shown below in which X represents a single bond or an alkylene group of 1 to 3 carbon atoms; and n represents an integer of 0 to 3.