Abstract: An apparatus includes a chuck, a first drain cup and second drain cup with two separately drain lines connected to each drain cup. The second drain cup is integrated with the first drain cup and located on top of the first drain cup. The different based chemical wastes can be collected into the separated drain cups and furthermore into the different drain lines and waste tanks. Accordingly, different based photo resists and developers can be used at the same apparatus by adjusting the chuck position to save the coating and develop tool and clean room space and furthermore the production cost.

Abstract: A photo resist layer includes a first region and a second region. A treatment layer is applied to the photo resist layer.

Abstract: An optical element includes: an incident surface irradiated with irradiation light; an emission surface of which at least a part faces a direction opposite to the incident surface; and a metal film having a hole to connect the incident surface and emission surface. The incident surface includes a first surface, disposed around an end of the hole on the incident surface side and having an inner edge connected to an inner surface of the hole, and a second surface disposed around the first surface forming a discontinuous portion between the second surface and an outer edge of the first surface. The distance between the inner and outer edges is determined by a wavelength of surface plasmons such that an intensity of light is increased due to interference between surface plasmons, excited at the inner edge by the irradiation light, and surface plasmons traveling from the discontinuous portion.

Abstract: A photosensitive material and methods of making a pattern on a substrate are disclosed. The photosensitive material includes a polymer that turns soluble to a developer solution after a chemically amplified reaction, and at least one chemical complex having a single diffusion length. The material includes at least one photo-acid generator (PAG) linked to at least one photo decomposable base (PDB) or quencher.

Abstract: A pattern forming method contains (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a) a repeating unit represented by the specific formula, and (B) a compound capable of generating an organic acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, and (iii) a step of developing the film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A negative pattern is formed by coating a resist composition comprising a branched polymer having chains extending in at least three directions and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast and no swell during organic solvent development, and forms a pattern without collapse and bridging defects.

Abstract: A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.

Abstract: A photopatternable structure (10) comprises an optically transparent substrate (12) having first and second faces (14, 16), coated respectively with first and second photosensitive materials (18, 20), the coated substrate being opaque to electromagnetic radiation of one or more wavelengths to which the photosensitive materials are sensitive. In use, the faces (14, 16) are exposed (sequentially or simultaneously) to curing radiation to which the photosensitive materials are sensitive and to which the coated substrate is opaque, resulting in two sided photopatterning without through -cure occurring.

Abstract: A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a polymer having a structural unit (I) represented by the following formula (1), and (B) a radiation-sensitive acid generator.

Abstract: Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition. Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).

Abstract: A method for printing a desired periodic or quasi-periodic pattern of dot features into a photosensitive layer disposed on a substrate including the steps of designing a mask pattern having a periodic or quasi-periodic array of unit cells each having a ring feature, forming a mask with said mask pattern, arranging the mask substantially parallel to the photosensitive layer, arranging the distance of the photosensitive layer from the mask and illuminating the mask according to one of the methods of achromatic Talbot lithography and displacement Talbot lithography, whereby the illumination transmitted by the mask exposes the photosensitive layer to an integrated intensity distribution that prints the desired pattern.

Abstract: A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition.

Abstract: Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH.

Abstract: A sulfonium salt comprising (a) a polymerizable substituent, (b) a sulfonium cation, and (c) a sulfonate anion within a common molecule is capable of generating a sulfonic acid in response to high-energy radiation or heat. A resist composition comprising the sulfonium salt as base resin has high resolution and is suited for precise micropatterning by ArF immersion, EB or EUV lithography.

Abstract: The present invention relates to a novel antireflective coating composition comprising a polymer obtained from a reaction product of at least one amino compound chosen from the group consisting of a polymer with repeat unit of structure (1), structure (2) and mixtures thereof reacted with a hydroxy compound chosen from the group consisting of structure (3), structure (4) and mixtures thereof, and, a thermal acid generator. The invention also relates to a process for using the novel composition in lithography.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control.

Abstract: Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

Abstract: A negative pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The photoresist composition includes a first polymer and an organic solvent. The first polymer includes a first structural unit having an acid-generating capability. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A compound represented by general formula (b1) shown below (in the formula, Y1 represents a divalent linking group; W represents S, Se or I; R1 represents a hydrocarbon group; represents an alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; when W represents I, m+n=2, and when W represents S or Se, m+n=3, provided that m?1 and n?0; p represents an integer of 0 to 5; and X? represents a counteranion.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, (A) including (A1) including (a0) and (a2), and the resist composition having a Tf temperature of lower than 170° C. (?La01 represents —COO—, —CON(R?)— or a divalent aromatic group, R? represents a hydrogen atom or a methyl group, Va01 represents a linear alkylene group of at least 3 carbon atoms, A? represents an anion-containing group, Mm+ represents an organic cation, Ya21 represents a single bond or divalent linking group, La21 represents —O—, —COO—, —CON(R?)— or —OCO—, R? represents a hydrogen atom or a methyl group, and Ra21 represents a lactone-containing group, a carbonate containing group or an —SO2— containing group.

Abstract: A method of forming ceramic pattern structures of silicon carbide film includes depositing an electron-beam resist or a photo-resist onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that includes silicon and carbon is deposited onto the substrate and resist pattern and the pre-ceramic polymer film is cured. A portion of the cured pre-ceramic polymer film on the resist pattern is removed, thereby forming a pre-ceramic polymer pattern on the substrate. The pre-ceramic polymer pattern is then converted to a ceramic pattern.

Abstract: A radiation-sensitive resin composition includes a polymer having a structural unit represented by a formula (I). In the formula (I), R1 represents a hydrogen atom or a methyl group. X represents a bivalent alicyclic hydrocarbon group not having or having a substituent. Y represents a bivalent hydrocarbon group having 1 to 20 carbon atoms. R2 represents a methyl group or a trifluoromethyl group.

Abstract: Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution.

Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.

Abstract: There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the acid generator component (B) including a sulfonium compound (B1) having a sulfonio group and an anion group represented by general formula (b1-r-1) shown below in one molecule thereof (wherein Y1 represents a divalent linking group or a single bond; L1 represents an ester bond or a single bond; V1 represents a divalent hydrocarbon group having a fluorine atom; and n represents 0 or 1, provided that, when L1 represents a single bond, n=1).

Abstract: A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value ? of from 5.0 to 30.0. The contrast value ? is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.

Abstract: A photo or heat-sensitive polymer comprising recurring units having polymerizable anion-containing sulfonium salt and phenolic hydroxyl-containing recurring units is useful as a base resin to formulate a resist composition having high sensitivity, high resolution and low LWR.

Abstract: Embodiments in accordance with the present invention provide for non-self imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming top-coat layers for overlying photoresist layers in immersion lithographic process and the process thereof.

Abstract: The present invention includes a composition comprising an alkyne-based substrate, an azide-based substrate, a Cu(II) salt and a photoinducible reducing agent. The present invention further includes a method of immobilizing a chemical structure in a given pattern onto a section of the surface of a solid substrate, using the photoinducible Cu(I)-catalyzed azide-alkyne cycloaddition Click reaction.

Abstract: A photo-curable resin composition comprising an epoxy-containing polymer, a photoacid generator in the form of an onium salt having tetrakis(pentafluorophenyl)borate anion, a solvent, and optionally an epoxy resin crosslinker forms a coating which serves as a protective film for the protection of electric/electronic parts.

Abstract: A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.

Abstract: A method of forming a integrated circuit pattern. The method includes coating a photoresist layer on a substrate; performing a lithography exposure process to the photoresist layer; performing a multiple-step post-exposure-baking (PEB) process to the photoresist layer; and developing the photoresist layer to form a patterned photoresist layer.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.

Abstract: A drive system drives a movable body, based on measurement results of a first measurement system which measures the position of the movable body in an XY plane by irradiating a measurement beam from an arm member on a grating placed on a surface parallel to the XY plane of the movable body and measurement results of a second measurement system which measures a variance of the arm member using a laser interferometer. In this case, the drive system corrects measurement errors caused due to a variance of the arm member included in the measurement results of the first measurement system, using the measurement results of the second measurement system.

Abstract: There is provided a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, including a base component (A) which exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0) shown below. In the formula, A? represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; R1 represents a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group; and W2 represents a group which is formed by polymerization reaction of a group containing a polymerizable group.

Abstract: Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.

Abstract: A photosensitive resin composition which is excellent in resolution, low in cost, and usable in a wide range of structures of polymer precursors each of which is reacted into a final product by a basic substance or by heating in the presence of a basic substance. The photosensitive resin composition includes a base generator which has a specific structure and generates a base by exposure to electromagnetic radiation and heating, and a polymer precursor which is reacted into a final product by the base generator and by a basic substance or by heating in the presence of a basic substance.

Abstract: Compounds of the Formula (I) and (II) wherein M1, M2 and M3 independently of one another are no bond, a direct bond, CO, O, S, SO, SO2 or NR14; provided that at least one of M1, M2 or M3 is a direct bond, CO, O, S, SO, SO2 or NR14; M4 is a direct bond, CR?3R?4, CS, O, S, SO, or SO2; Y is S or NR18; R1 for example is hydrogen, C3-C8cycloalkyl, phenyl or naphthyl, both of which are optionally substituted; R2 for example is C1-C20alkyl; R?2 has one of the meanings given for R2; R3 and R4 are for example hydrogen, halogen, C1-C20alkyl; R?3, R?4, R?3 and R?4 independently of one another have one of the meanings given for R3 and R4; and R5 is for example hydrogen, halogen, C1-C20alkyl; provided that in the compounds of the Formula (I) at least two oxime ester groups are present; exhibit an unexpectedly good performance in photopolymerization reactions.

Abstract: The invention relates to a photosensitive resin composition comprising a binder polymer having a (meth)acrylic acid-based structural unit, with a dispersity (weight-average molecular weight/number-average molecular weight) of no greater than 1.6, a photopolymerizable compound, a photopolymerization initiator and a sensitizing dye.

Abstract: A resist composition including a base material component whose solubility in a developing solution changes by the action of an acid and an acid generator component which generates an acid upon exposure. The acid generator component includes an acid generator that includes a compound containing nitrogen atoms having proton acceptor properties and sites capable of generating an acid upon exposure in the same molecule, the number of the sites being larger than the number of the nitrogen atoms.

Abstract: A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Abstract: The invention relates to a photo-crosslinkable composition obtainable by a method comprising: (a) the hydrolysis and condensation reaction of a [(epoxycycloalkyl)alkyl]trialkoxysilane in solution in an organo-aqueous medium as described in specification to obtain a solution of an organo-mineral hybrid prepolymer, in which the totality or quasi-totality of the alkoxysilane groups has been hydrolysed, and which comprises in average at least 4 (epoxycycloalkyl)alkyl groups; (b) cooling the obtained polyepoxide prepolymer composition as described in specification: (c) adding to said composition at least one cationic-polymerisation photo-photoinitiator and at least one specific photosensitiser as describes in specification and adding a surfactant; (d) agitating the obtained composition as described in specification thus obtained; (e) filtering the obtained composition as described in specification thus obtained; and (f) storing the obtained liquid filtrate as described in specification thus obtained.

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: Provided is a pattern forming method making it possible to obtain a pattern with less scums and watermark defects. The pattern forming method includes the steps of forming a film from an actinic-ray- or radiation-sensitive resin composition includes a resin (A) that exhibits an increased solubility in an alkali developer when acted on by an acid, a compound (B) that generates an acid when exposed to actinic rays or radiation, and a resin (C) containing at least one of a fluorine atom and a silicon atom, exposing the film to light, and developing the exposed film using a tetramethylammonium hydroxide solution whose concentration is less than 2.38 mass %.

Abstract: The present invention provides a pattern correction method of, when a plurality of pattern elements on a mask used to process a line pattern formed on a substrate are transferred to the substrate, performing proximity effect correction of each pattern element such that a transferred image obtains a dimension equal to a target dimension, comprising setting, based on a density of a pattern element in a peripheral region surrounding a pattern element of interest, a dimension of the pattern element whose transferred image formed under the density of the pattern element has a dimension equal to the target dimension as a reference value for the pattern element of interest, and calculating a dimension of transferred image of the pattern element of interest while changing around the reference value and determining the dimension of the pattern element of interest based on the calculation result.

Abstract: Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X? represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

Abstract: The invention relates to a photo-embossing process for the preparation of a polymeric relief structure comprising the steps of: a) coating a substrate with a coating composition comprising one or more radiation-sensitive ingredients and less than 30 wt % polymeric binder material; b) locally treating the coated substrate with electromagnetic radiation having a periodic, non-periodic or random radiation-intensity pattern, forming a latent image, at a temperature below a transition temperature of the coating composition; and c) polymerizing and/or crosslinking the resulting coated substrate, at a temperature above said transition temperature, wherein the transition temperature is a temperature that defines a transition of the coating composition between a state of high viscosity and low viscosity and wherein the coating composition comprises a compound A comprising at least one radiation curable group and a photoinitiator, the coating composition having a transition temperature between 30° C. and 120° C.