Abstract: The present invention relates to a method for manufacturing a stamper for injection molding, and more particularly, to a method for manufacturing a stamper for injection molding which can prevent a scratch from forming thereon and has an excellent durability owing to high hardness even after manufacturing of the metal stamper with micro patterns formed thereon is finished. The method for manufacturing a stamper for injection molding includes a pattern forming step for forming a predetermined micro pattern on a substrate, a metal plating step for making metal plating on the substrate to form a stamper having the micro pattern transcribed thereto, a stamper separating step for separating the stamper of the metal plating from the substrate, and a protective layer coating step for coating a protective layer on the stamper for maintaining a mirror surface.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Abstract: A radiation-sensitive resin composition includes a polymer that includes a structural unit represented by a formula (1), and an acid generator. R1 is a hydrogen atom, a fluorine atom, or the like. R2 is a hydrogen atom or a monovalent hydrocarbon group. R3 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R4 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R5 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R6 is a monovalent chain hydrocarbon group. R6 is bonded to R3 to form a first alicyclic structure, or R6 is bonded to R5 to form a second alicyclic structure. At least one hydrogen atom of R2, R3, or R4 is optionally substituted with a fluorine atom.

Abstract: A monomer for a hardmask composition represented by the following Chemical Formula 1,

Abstract: The present invention provides an exposure apparatus which exposes a substrate, the apparatus including an adjustment unit configured to adjust an oxygen concentration in a space between the projection optical system and the substrate, a measuring unit configured to measure an illuminance of light applied to the substrate, and a control unit configured to control the measuring unit so as to measure illuminances of light applied to the substrate a plurality of times during irradiation of the substrate with light from the projection optical system, configured to calculate, based on each of the illuminances measured the plurality of times, an oxygen concentration value corresponding to the measured illuminance on each time and configured to control the adjustment unit so as to set the oxygen concentration in the space to the calculated oxygen concentration value.

Abstract: An apparatus includes a probe tip configured to contact the mask, a cantilever configured to mount the probe tip wherein the cantilever includes a mirror, an optical unit having a light source projecting a light beam on the mirror and a light detector receiving a reflected light beam from the mirror, and an electrical power supply configured to connect the probe tip. The apparatus further includes a computer system configured to connect the optical unit, the electrical power supply, and the stage. The electrical power supply provides an electrical current to the probe tip and heats the probe tip to a predetermined temperature. The heated probe tip repairs a defect by smoothing and reducing a dimension of the defect, and inducing structural deformations of multilayer that cancel out the distortion (of multilayer) caused by buried defects using the heated probe tip as a thermal source canning the defect.

Abstract: A resist composition having excellent lithography properties, which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component (A) which exhibits changed solubility in a developing solution by the action of an acid, and the base material component (A) containing a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1); a method for forming a resist pattern using the resist composition; and a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), are disclosed.

Abstract: There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.

Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.

Abstract: A polymerizable composition contains (A) a polymerization initiator that is an acetophenone-based compound or an acylphosphine oxide-based compound, (B) a polymerizable compound, (C) at least either a tungsten compound or a metal boride, and (D) an alkali-soluble binder.

Abstract: A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract: A resin composition includes: (A) a polymer having a structural unit shown by the formula (I), and an acidic functional group or a group derived therefrom at both of the terminals; wherein X1 is a di- to octa-valent organic group, Y1 is a di- to octa-valent organic group, R1 is a hydrogen atom or an organic group having 1 to 20 carbon atoms, R2 is a hydrogen atom or a monovalent organic group, when plural R1s or R2s exist, the plural R1s or R2s may be the same or different, p and q are independently an integer of 0 to 4, l and m are independently an integer of 0 to 2, and n is an integer of 2 or more indicating the number of structural units; (B) a solvent; and (C) a compound shown by formula (II) wherein R3 is a monovalent organic group.

Abstract: The present invention provides a resin comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, A2 represents a divalent fluorine-containing C1-C12 hydrocarbon group, and A1 represents a group represented by the formula (a-g1): A10-X10sA11-??(a-g1) wherein A10 is independently in each occurrence a C1-C5 aliphatic hydrocarbon group, A11 represents a C1-C5 aliphatic hydrocarbon group, X10 is independently in each occurrence —O—, —CO—, —CO—O— or —O—CO—, and s represents an integer of 0 to 2, and a photoresist composition comprising the resin and an acid generator.

Abstract: According to one embodiment, a patterning method includes exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images.

Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).

Abstract: An additive polymer comprising recurring styrene units having an ester group bonded to a CF3—C(OR2)—R3 group (wherein R2 is H, acyl or acid labile group, R3 is H, CH3 or CF3) such as 1,1,1,3,3,3-hexafluoro-2-propanol is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development.

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a photo-decomposable quencher (D0) containing a compound represented by general formula (d0) shown below. In the formula, R1 represents a hydrocarbon group of 4 to 20 carbon atoms which may have a substituent; Y1 represents a single bond or a divalent linking group; R2 and R3 each independently represents a substituent of 0 to 20 carbon atoms other than a fluorine atom; one of R2 and R3 may form a ring with Y1; Mm+ represents an organic cation having a valency of m; and m represents an integer of 1 or more.

Abstract: An additive polymer comprising recurring units derived from a fluorosulfonamide-substituted styrene and recurring units derived from a stilbene, styrylnaphthalene, dinaphthylethylene, acenaphthylene, indene, benzofuran, or benzothiophene derivative is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development.

Abstract: As a negative actinic ray-sensitive or radiation-sensitive resin composition capable of forming a pattern excellent in sensitivity, resolution and pattern profile and reduced in line edge roughness (LER), scum and development defect, a negative actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a polymer compound containing (a) a repeating unit capable of generating an acid upon irradiation with an actinic ray or radiation and (b) a repeating unit having a phenolic hydroxyl group, and (B) a crosslinking agent, is provided.

Abstract: A negative-type photosensitive resin composition which is good in sensitivity and resolution, a pattern forming method by the use thereof wherein a pattern which can be developed in an alkali aqueous solution, is excellent in sensitivity, resolution and heat resistance and has a good shape is obtained, and highly reliable electronic parts are provided. The negative-type photosensitive rein composition includes (a) a polymer that has a phenolic hydroxyl group at a terminal and is soluble in the alkali aqueous solution, (b) a compound that generates an acid by irradiating active light, and (c) a compound that can be crosslinked or polymerized by an action of the acid.

Abstract: Methanofullerene derivatives having side chains with acid-labile protecting groups. The methanofullerene derivatives may find application as photoresist materials, and particularly as positive-tone photoresists.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the following formula (1-1); an actinic ray-sensitive or radiation-sensitive film using the composition; and a pattern forming method: in the formula, R1, R2, R3, R4 and Y? are the same as those in formula (1-1) set forth in the description.

Abstract: The invention provides a negative resist composition including, as a base resin, a polymer that contains at least a repeating unit “a” having a cyclopentadienyl complex and is represented by the following general formula (1). There can be a negative resist composition, especially a chemically amplified negative resist composition that has a higher resolution than conventional hydroxystyrene-based and novolak-based negative resist compositions, a good pattern configuration after exposure, and further excellent etching resistance, and a patterning process using the same.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

Abstract: A process for forming a hydrophilic coating and a hydrophilic coating, the process including the steps of: (1) forming, on a substrate, a first coating resin layer including a first cationic polymerization resin and a first photoacid generator; (2) laminating, on the first coating resin layer, a second coating resin layer including a second cationic polymerization resin which includes an acid-cleavable linkage in its main chain, and a second photoacid generator which generates methide acid by irradiation with an active energy ray including ultraviolet light; (3) forming a coating by curing the first coating resin layer and the second coating resin layer through exposure of the first coating resin layer and the second coating resin layer to the active energy ray to conduct development; and (4) forming a hydrophilic coating by hydrophilizing a surface of the coating through heat treatment of the coating.

Abstract: Embodiments in accordance with the present invention encompass self-imageable film forming compositions that comprise norbornene-type polymers and that can be formulated to be either positive tone imaging or negative tone. The films formed thereby are useful in the forming of microelectronic and optoelectronics devices.

Abstract: A resist composition for EUV exhibiting E0KrF greater than E0EUV, in which E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern. The resulting resist composition for EUV exhibits excellent lithography properties and pattern shape in EUV lithograph.

Abstract: A sulfonium salt having formula (1a) is provided wherein R1 is H, F, CH3 or CF3, R1a to R1m are each independently H or a monovalent hydrocarbon group, L is a single bond or divalent hydrocarbon group, X is a divalent alkylene group optionally substituted with fluorine, and n is 0 or 1. The sulfonium salt having a polymerizable anion provides for efficient scission of acid labile groups in a chemically amplified resist composition, and it is a very useful monomer from which a base resin for resist use is prepared.

Abstract: An energy application device applies optical energy on an adhesion sheet by a light radiator and, subsequently, applies heat energy on the adhesion sheet by a heater. With this arrangement, even the adhesion sheet, which includes an adhesive layer having an energy barrier that cannot be overcome only with optical energy, is enabled to start a photoreaction by overcoming an energy barrier with the heat energy from the heater.

Abstract: The present invention provides a photosensitive resin composition comprising an (a) component: an acid-modified epoxy resin, a (b) component: a photopolymerizable monomer having an ethylenically unsaturated group, a (c) component: a photopolymerization initiator, a (d) component: an epoxy resin, and an (e) component: an inorganic filler, wherein the (a) component comprises an acid-modified bisphenol novolak type epoxy resin and further the photosensitive resin composition satisfies a predetermined condition, and provides a photosensitive film, a permanent resist and a method for producing a permanent resist using the same.

Abstract: Polymerized negative acting photoresists are removed from substrates at relatively low temperatures and fast stripping times using aqueous based alkaline solutions.

Abstract: The present invention provides a silicone composition that includes an epoxy-functional organopolysiloxane resin and an epoxy-functional organosiloxane oligomer, and a method of preparing optical waveguides using the silicon composition. The present invention also provides a cured silicon composition, and an optical waveguide that includes the cured silicon composition.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component which exhibits changed solubility in a developing solution by the action of an acid; and the base material component containing a resin component having a constituent unit derived from a compound represented by the following general formula (a0-1), at least two or more kinds of a constituent unit containing an acid dissociable group represented by the following general formula (a1-r-1) or (a1-r-2), and a constituent unit containing a lactone-containing, an —SO2-containing, or a carbonate-containing cyclic group; and a method for forming a resist pattern using the resist composition.

Abstract: A polymerization method of a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), which has excellent lithography properties, and is useful as a resist composition, the method including conducting polymerization using a mixed solvent containing 10 mass % or more of one or more of a cyclic ketone-based solvent, an ester-based solvent, and a lactone-based solvent. A resist composition containing the high-molecular weight compound (A1) and a method for forming a resist pattern using the same.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resist composition including: a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid generator component (B) which generates an acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0) containing an acid decomposable group that exhibits increased polarity by the action of acid and a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group, and the acid generator component (B) including an acid generator (B1) containing a compound having a nitrogen atom exhibiting a proton acceptor property and an acid generating site capable of generating an acid upon exposure in the same molecule thereof.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component which exhibits changed solubility in a developing solution by the action of an acid, the base material component containing a high-molecular weight compound having a constituent unit derived from a compound represented by the following formula (a0-1), a constituent unit containing a lactone-containing, a SO2—-containing or a carbonate-containing cyclic group, and a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and the high-molecular weight compound having a weight average molecular weight of not more than 6,000, and a method for forming a resist pattern using the same.

Abstract: To provide a pellicle for lithography having a pellicle membrane excellent in light resistance against light with a wavelength of at most 250 nm, particularly at most 200 nm, a pellicle-mounted photomask using it, and an exposure treatment method. A pellicle for lithography having a multilayer pellicle membrane including a membrane made of a fluoropolymer (A) which contains, as the main component, repeating units obtained by cyclopolymerization of a pertluorodiene having one etheric oxygen atom, and a membrane made of a fluoropolymer (B) which has fluorinated alicyclic ring structures each containing, in the ring structure, two or three etheric oxygen atoms not being adjacent to one another, wherein the total thickness of the membrane made of the fluoropolymer (B) is at most 40% of the total thickness of the membrane made of the fluoropolymer (A).

Abstract: A method of forming a photoresist pattern includes providing a photoresist film on a substrate. An upper layer film is provided on the photoresist film using an upper layer film-forming composition. Radiation is applied to the upper layer film and the photoresist film through a mask having a given pattern via an immersion medium. The upper layer film and the photoresist film are developed using a developer to form a photoresist pattern. The upper layer film-forming composition includes a resin soluble in the developer and a solvent component. The solvent component includes a first solvent, a second solvent shown by a general formula (2), and a third solvent shown by a general formula (3). The first solvent is diethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol diethyl ether, ?-butyrolactone, methyl propylene diglycol, methyl propylene triglycol or a mixture thereof.

Abstract: A method of forming a resist pattern using a resist composition containing a base component (A) which exhibits reduced solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, the base component (A) including a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below and a structural unit (a2) containing a lactone-containing cyclic group or the like (in formula (a0-1), Ra1 represents a monovalent substituent having a polymerizable group, La1 represents O, S or a methylene group, R1 represents a linear or branched hydrocarbon group of 2 to 20 carbon atoms which may have a substituent, or a cyclic hydrocarbon group which may have a hetero atom, and n represents an integer of 0 to 5).

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

Abstract: A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000; a method of forming a resist pattern, including: forming a surface modifying layer on a substrate using the surface modifying material, forming a resist film on the substrate, on which the surface modified layer has been formed, using a resist composition, conducting exposure of the resist film, and alkali developing the resist film to form a resist pattern; and a method of forming a pattern, including: etching the substrate, on which a resist pattern has been formed by the method of forming a resist pattern.

Abstract: A method of making a relief printing element in a liquid photopolymer platemaking process is described. The method comprises the steps of: (a) selectively exposing the liquid photopolymer to actinic radiation through a negative to crosslink and cure portions of the liquid photopolymer; and (b) reclaiming uncured portions of the liquid photopolymer to be reused in the platemaking process. The step of reclaiming uncured portions of the liquid photopolymer comprises (i) heating the printing element to decrease the viscosity of the uncured liquid photopolymer; and (ii) removing uncured liquid photopolymer from the surface of the relief image printing element so that recovery of uncured liquid photopolymer from the surface of the relief image printing element is enhanced.

Abstract: Disclosed herein is a composition comprising a graft block copolymer comprising a copolymer comprising a backbone polymer; and a first graft polymer that comprises a surface energy reducing moiety; the first graft polymer being grafted onto the backbone polymer; where the surface energy reducing moiety comprises a fluorine atom, a silicon atom, or a combination of a fluorine atom and a silicon atom; a photoacid generator; and a crosslinking agent.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit represented by the following formula (I) or (II) as defined in the specification in an amount of 20 mol % or more based on all repeating units in the resin (P) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, so as to form an exposed film; and (iii) a step of developing the exposed film by using a developer containing an organic solvent to form a negative pattern.

Abstract: Disclosed herein is a composition comprising a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to crosslink the graft block copolymer; a photoacid generator; and a crosslinking agent.

Abstract: Disclosed is a method of making polysiloxane and polysilsesquioxane based hardmask respond to radiations with positive tone and negative tone simultaneously. Unradiated films are insoluble in developers, showing positivity tone. Radiated films are insoluble in developers as well, showing negative tone. Only half-way radiated films are soluble in developers. The dual-tone photo-imageable hardmask produces splitted patterns. Compositions of dual-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Further disclosed are processes of using photo-imageable hardmasks to create precursor structures on semiconductor substrates with or without an intermediate layer.

Abstract: Disclosed is a photosensitive resin composition comprising: (Component A) an oxime sulfonate compound represented by Formula (1); (Component B) a resin comprising a constituent unit having an acid-decomposable group that is decomposed by an acid to form a carboxyl group or a phenolic hydroxy group; and (Component C) a solvent wherein in Formula (1) R1 denotes an alkyl group, an aryl group, or a heteroaryl group, each R2 independently denotes a hydrogen atom, an alkyl group, an aryl group, or a halogen atom, Ar1 denotes an o-arylene group or an o-heteroarylene group, X denotes O or S, and n denotes 1 or 2, provided that of two or more R2s present in the compound, at least one denotes an alkyl group, an aryl group, or a halogen atom.