Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-labile moieties.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. Acid generator compounds of the invention comprise 1) a cyclic sulfonium salt and 2) a covalently linked photoacid-labile group. In one aspect, thioxanthone acid generator compounds are particularly preferred, including acid generator compounds that comprise (i) a thioxanthone moiety; and (ii) one or more covalently linked acid labile-groups.

Abstract: The present invention relates to a printing stencil, for example, for applying a contacting (contact finger, busbar(s)) to a substrate of a solar cell and to a method for producing such a printing stencil. The printing stencil can include a carrier layer and a structure layer located below the carrier layer, the structure layer having at least one printed image opening which corresponds to at least a portion of the printed image of the contacting (contact finger, busbar(s)), the carrier layer having one or more carrier layer openings and the one or more carrier layer openings overlapping when the printing stencil is viewed from above, with respect to the printed image opening in such a manner that the printing stencil has an opening which is formed from the at least one printed image opening and the one or more carrier layer openings, and is suitable for applying contacting material to the substrate through the opening.

Abstract: A process for forming a hydrophilic coating, including (1) forming, on a substrate, coating resin layer including a cationic polymerization resin having an acid-cleavable linkage in its main chain, and a photoacid generator which generates antimonic acid or an acid having a weaker acid strength than that of antimonic acid by irradiation with active energy ray including ultraviolet light; (2) laminating, on the resin layer, a photoacid generator holding layer including a photoacid generator which generates an acid having a stronger acid strength than that of antimonic acid by irradiation with the energy ray, and a holder which holds the photoacid generator and can be removed in step (3); (3) removing the holding layer and curing the resin layer through exposure of those layers to the energy ray to conduct development; and (4) forming a hydrophilic coating by hydrophilizing a surface of the resin layer through heat treatment thereof.

Abstract: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 100-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: The invention provides an optical fiber, a method for the preparation thereof, and a device. An optical fiber, wherein a distal end of the optical fiber is provided with an optical mask adapted for projecting a predetermined pattern on a target surface by radiation transmitted from the distal end of the optical fiber, allows for the rapid application of patterns and three-dimensional structures on target surfaces, in particular on the ends of optical fibers.

Abstract: A photoresist composition includes a binder resin combined with a black dye, a monomer, a photo-polymerization initiator and a remainder of a solvent.

Abstract: According to one embodiment, a patterning method includes exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images.

Abstract: A method is provided for heat transfer from a surface to a fluid. The method includes directing a first fluid flow towards the surface in a first direction and directing a second fluid flow towards the surface in a second direction. The first and second fluid flows cooperate to cool the surface.

Abstract: A method for supplying a first gas and a second gas using a purge ring in a photonic processing system includes arranging a first layer and a second layer to define a first plenum and a first baffle, arranging the second layer and a third layer to define a second plenum and a second baffle, receiving a first gas at the first plenum that flows through the first plenum and the first baffle to an inner region, and receiving a second gas at the second plenum that flows through the second plenum and the second baffle to the inner region. The second baffle is one of less restrictive and more restrictive than the first baffle.

Abstract: The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: An asymmetric slotted waveguide and method for fabricating the same. The slotted waveguide is constructed in silicon-on-insulator using a Complementary metal-oxide-semiconductor (CMOS) process. One or more wafers can be coated with a photo resist material using a photolithographic process in order to thereby bake the wafers via a post apply bake (PAB) process. An anti-reflective coating (TARC) can be further applied on the wafers and the wafers can be exposed on a scanner for the illumination conditions. After a post exposure bake (PEB), the wafers can be developed in a developer using a puddle develop process. Finally, the printed wafers can be processed using a shrink process to reduce the critical dimension (CD) of the slot and thereby achieve an enhanced asymmetric slotted waveguide that is capable of guiding the optical radiation in a wide range of optical modulation applications using an electro-optic polymer cladding.

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.

Abstract: The present invention provides a transmission apparatus for transmitting a light signal between an outside and an inside of a vacuum chamber, comprising a plurality of first transmission lines configured to transmit a plurality of light signals outside the vacuum chamber, a plurality of second transmission lines configured to transmit the plurality of light signals inside the vacuum chamber, and a light-transmissive member configured to transmit the light signals between the plurality of first transmission lines and the plurality of second transmission lines, wherein the light-transmissive member has a structure formed to isolate light paths of the plurality of light signals between the plurality of first transmission lines and the plurality of second transmission lines from each other.

Abstract: A method of manufacturing a micro lens array, wherein the quality of an image is prevented from being deteriorated as a beam on an off-axis surface reaches a focal plane of a micro lens by forming a shading film for preventing the beam from penetrating through a space between micro lenses of the micro lens array, a micro lens having a high numerical aperture or any shape, such as an aspheric shape, is quickly manufactured at a low cost, and the micro lenses and a mask pattern are easily aligned by forming a mask pattern on a focus region formed by the micro lenses of the micro lens array.

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract: There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.

Abstract: A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.

Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Abstract: A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.

Abstract: A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator.

Abstract: A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved in dissolution contrast.

Abstract: A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit capable of decomposing by an action of an acid to produce a carboxyl group, represented by the following formula (I) as defined in the specification and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film; and (iii) a step of performing a development by using a developer containing an organic solvent to form a negative pattern.

Abstract: A photoresist composition including: about 5% by weight to about 10% by weight of a binder resin; about 5% by weight to about 10% by weight of a photo-polymerization monomer; about 1% by weight to about 5% by weight of a photo initiator, which is activated by a light having a peak wavelength from about 400 nm to about 410 nm; about 5% by weight to about 10% by weight of a black-coloring agent, each based on a total weight of the photoresist composition; and a solvent.

Abstract: [Problem] Provided are: a pattern forming method by which a pattern can be formed by development using a thermosetting resin composition and a cured layer having excellent curability can be obtained; a thermosetting resin composition used in the pattern forming method; and a printed circuit board. [Means for Solution] The pattern forming method according to the present invention is characterized by comprising the steps of: (A) forming a resin layer composed of an alkali-developable thermosetting resin composition comprising a photobase generator on a substrate; (B) activating the photobase generator contained in the alkali-developable thermosetting resin composition by irradiation with a light in a pattern form so as to cure an irradiated part; and (C) forming a negatively patterned layer by removing a non-irradiated part by alkali development.

Abstract: Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.

Abstract: A resin comprises a structural unit derived from a compound represented by the formula (I); wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that optionally has one or more halogen atoms; X1 represents a C2 to C36 heterocyclic group, one or more hydrogen atoms contained in the heterocyclic group may be replaced by a halogen atom, a hydroxy group, a C1 to C24 hydrocarbon group, a C1 to C12 alkoxyl group, a C2 to C4 acyl group, or a C2 to C4 acyloxy group, and one or more —CH2— contained in the heterocyclic group may be replaced by —CO— or —O—.

Abstract: A processed substrate having a through-hole whose openings in respective surfaces of the processed substrate are matched to each other in size, and a method for easily manufacturing the processed substrate with high efficiency. The processed substrate (1) includes a light transmissive substrate having a plurality of through-holes. Each of the through-holes has a larger opening diameter and a smaller opening, wherein the larger opening diameter is larger in size than the smaller opening diameter by a difference of 5% or less of the size of the larger diameter. As such, a through-hole (6) whose openings in the respective surfaces are matched to each other in size can be provided.

Abstract: Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imagable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

Abstract: To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of ?4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.

Abstract: A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: A photoresist composition comprising a resin which has no acid-labile group and which comprises a structural unit represented by formula (I); and a structural unit represented by formula (a4); a resin which has an acid-labile group; and an acid generator.

Abstract: [Object] To provide a top anti-reflection coating composition equal or superior to known products in film-formability, in refractive index, in temporal stability and in safety; and also to provide a pattern formation method employing that. [Means] A top anti-reflection coating composition comprising a solvent, an alkylsulfonic acid having 10 to 18 carbon atoms, and a fluorine-containing polymer having a weight average molecular weight of 300000 to 800000 and represented by the formula (1): -Ax-By- (1). In the formula (1), A is a repeating unit represented by the formula (A): (R is a fluorine-containing alkylene group having 1 to 40 carbon atoms or R is a fluorine-containing alkylene group having 2 to 100 carbon atoms and an ether bond); B is a repeating unit capable of combining with A to form a copolymer; x and y are numbers indicating the polymerization ratios, provided that x is not equal to 0; and A and B may randomly combine with each other or may form blocks.

Abstract: In one example, a reticle disclosed herein includes a body having a center, an arrangement of a plurality of exposure patterns, wherein a center of the arrangement is offset from the center of the body, and at least one open feature defined on or through the body of the reticle. In another example, a method is disclosed that includes forming a layer of photoresist above a plurality of functional die and a plurality of incomplete die, exposing the photoresist material positioned above at least one of the functional die and/or at least one of the incomplete die, performing an incomplete die exposure processes via an open feature of the reticle to expose substantially all of the photoresist material positioned above the plurality of incomplete die, and developing the photoresist to remove the portions of the photoresist material positioned above the incomplete die.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a guanidine compound having a logP value of 1.2 or more, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Abstract: A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.

Abstract: A method of forming an image having multiple phases is disclosed herein. The method includes forming exposed and unexposed areas, the exposed areas comprising a first polymer network exhibiting first and second phases that are chemically connected and have different refractive indices, the first phase being continuous, and the second phase comprising a plurality of structures dispersed within the first phase, and the unexposed areas comprising a second polymer network comprising third and fourth phases that are chemically connected and have different refractive indices, the third phase being continuous, and the fourth phase comprising a plurality of structures dispersed within the third phase. The first and second polymer networks are chemically connected, and morphology formed by the first and second phases is different than that formed by the third and fourth phases.

Abstract: A photoresist composition comprising a resin which comprises a structural unit represented by formula (I); wherein R1 represents a hydrogen atom or a methyl group, and R2 represents C1-C10 hydrocarbon group; and a resin which comprises a structural unit having an acid-labile group and no structural unit represented by formula (I); and an acid generator represented by formula (II): wherein X2 represents a C1-C6 alkanediyl group where a hydrogen atom can be replaced by a hydroxyl group or a group —O—R5 and where a methylene group can be replaced by an oxygen atom or a carbonyl group, R4 and R5 each independently represent a C1-C24 hydrocarbon group where a hydrogen atom can be replaced by a fluorine atom or a hydroxyl group and where a methylene group can be replaced by an oxygen atom or a carbonyl group, and Z+ represents an organic cation.

Abstract: A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed.

Abstract: Provided are a photosensitive resin composition which is soluble in an alkaline aqueous solution and which has a good propagation loss in a visible light wavelength region, a photosensitive resin cured matter, a photosensitive resin film, a photosensitive resin film cured matter and an optical waveguide obtained by using the same. Provided are, to be specific, a photosensitive resin composition comprising (A) a vinyl polymer having at least one chain-polymerizable functional group in a molecule, (B) a polymerizable compound and (C) a polymerization initiator, wherein the component (C) is at least one selected from the group consisting of 2-[2-oxo-2-phenylacetoxyethoxy]ethyl oxyphenylacetate, 2-(2-hydroxyethoxy)ethyl oxyphenylacetate and oligo{2-hyroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]}propanone, a photosensitive resin cured matter, a photosensitive resin film, a photosensitive resin film cured matter and an optical waveguide obtained by using the same.

Abstract: An apparatus includes at least two tanks, at least two pumps, at least one nozzle, and a chuck. The apparatus provides multiple developers with different polarities during a developing process to target portions of a latent resist profile having different polarities, and thus different solubility. This apparatus also allows a mixture of two developers to be used for the resist film developing. A polarity of the mixture is adjustable by controlling a ratio of one pump flow rate to another pump flow rate and further controlling the resist pattern profile.

Abstract: A method of producing an ammonium salt compound, including reacting a first ammonium salt compound containing a first ammonium cation which is a primary, secondary or tertiary ammonium cation with a nitrogen-containing compound having a lone pair to obtain a second ammonium salt compound which contains a conjugated acid of the nitrogen-containing compound, the conjugated acid of the nitrogen-containing compound having a larger pKa than the pKa of the first ammonium cation; and a method of producing a compound, including a step of salt exchange between the ammonium salt compound obtained by the aforementioned production method and a sulfonium cation or iodonium cation which has a higher hydrophobicity than the hydrophobicity of the conjugated acid of the nitrogen-containing compound.

Abstract: A device and method for preparing a device having a superoleophobic surface are disclosed. The method includes providing a substrate; coating a lift-off resist layer on the substrate; baking the lift-off resist layer; layering a photoresist layer on the lift-off resist layer; performing photolithography to create a textured pattern in the photoresist layer and the lift-off resist layer, and chemically modifying the textured pattern to create a superoleophobic surface.