Abstract: In a method for manufacturing a device, at first a plurality of components each having at least a first terminal region are provided. Furthermore, a support with a first surface, in which a plurality of recesses are formed, is provided. The components provided are inserted into the recesses such that the first terminal region of each component faces the first surface of the support. Conductive material is applied on the first surface of the support such that the conductive material is in contact with the first terminal region of each component. Finally, the support is diced to obtain the individual devices.

Abstract: Products and assemblies are provided for socketably receiving elongate interconnection elements, such as spring contact elements, extending from electronic components, such as semiconductor devices. Socket substrates are provided with capture pads for receiving ends of elongate interconnection elements extending from electronic components. Various capture pad configurations are disclosed. Connections to external devices are provided via conductive traces adjacent the surface of the socket substrate. The socket substrate may be supported by a support substrate. In a particularly preferred embodiment the capture pads are formed directly on a primary substrate such as a printed circuit board.

Abstract: An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is scattered in the handling of the integrated circuit since the integrated circuit is extremely thin. According to the present invention, multiple openings reaching a peel layer are provided, a material body having a pattern shape that does not cover regions (the openings and a device portion) is provided, and then, a gas or liquid containing fluorine halide is introduced to partially remove the peel layer.

Abstract: A semiconductor device is configured of a semiconductor chip which is sandwiched by first and second resin films having a wiring pattern. Plural semiconductor chips can be fabricated collectively by sandwiching the semiconductor chips by the first and second resin films, and productivity can be improved.

Abstract: A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

Abstract: A manufacturing method of a semiconductor device including preparing a lead frame having a die pad, leads arranged around the die pad and a silver plating layer formed over a first portion of each of the leads, mounting a semiconductor chip over a main surface of the die pad with a rear surface of the chip fixed to the main surface of the die pad, electrically connecting electrodes of the chip with the leads through wires, forming a molding resin sealing the die pad, the first portion, the semiconductor chip, and the wires, and forming a lead-free solder plating layer over a second portion of each of the leads exposed from the molding resin. An area of the die pad is smaller than an area of the chip, and a part of the molding resin contacts with the rear surface of the chip exposed from the die pad.

Abstract: A method of fabricating wafer level chip scale packages may involve forming a hole to penetrate through a chip pad of an IC chip. A base metal layer may be formed on a first face of a wafer to cover inner surfaces of the hole. An electrode metal layer may fill the hole and rise over the chip pad. A second face of the wafer may be grinded such that the electrode metal layer in the hole may be exposed through the second face. By electroplating, a plated bump may be formed on the electrode metal layer exposed through the second face. The base metal layer may be selectively removed to isolate adjacent electrode metal layers. The wafer may be sawed along scribe lanes to separate individual packages from the wafer.

Abstract: The method of the present invention includes a first step of preparing a substrate in which a plurality of circuit boards are integrally connected to one another, each of the circuit boards having conductive patterns which include pads formed on a surface of the circuit board; a second step of electrically connecting circuit elements to the respective conductive patterns on each of the circuit boards; a third step of positioning ends of leads above the respective pads by superposing a lead frame including the plurality of leads on the substrate, and fixing the leads to the pads; and a fourth step of separating the circuit boards from the substrate in a state where the leads are fixed to the respective pads on each of the circuit boards, and thus separating the leads from the lead frame.

Abstract: A package may include a stack of unit chip packages, and each unit chip package may include a printed circuit board. The printed circuit board may support a semiconductor chip and a connection terminal for connecting to an adjacent unit chip package within the stack. A dummy package substrate may be disposed on the semiconductor chip of the uppermost unit chip package for protecting the semiconductor chip of the uppermost unit chip package. A method of fabricating a package may involve stacking unit chip packages so that the printed circuit board of a lower unit chip package abuts against a solder bump of an upper unit chip package, and stacking a dummy package substrate on the printed circuit board of an uppermost unit chip package.

Abstract: In one embodiment the present invention includes a method of manufacturing a chip scale package. Embodiments of the present invention include sawing kerfs between semiconductor device boundaries on opposite sides of the wafer and filling the kerfs with mold compound. The devices may then be sawed into individual packaged devices encapsulated in mold compound. In one embodiment, kerfs on opposite sides of the wafer have different widths to create a step in the wafer boundary with the mold compound, which improves the integrity of the package. In one embodiment, a device and one or more neighboring devices are bonded together using bond wires to form a group of device that are encapsulated in mold compound.

Abstract: One embodiment of the present invention provides an integrated chip module and a corresponding method of manufacture that facilitates proximity communication. This module includes a base chip and a bridge chip, both of which include an active face, upon which active circuitry and signal pads reside, and a back face opposite the active face. The active face of the bridge chip is bonded to the active face of the base chip, and the back face of the bridge chip is thinned via planarization or polishing.

Abstract: Methods relating to singulation of dice from semiconductor wafers. Trenches or channels are formed in the bottom surface of a semiconductor wafer, corresponding in location to wafer streets. The trenches may be formed by etching or through an initial laser cut. The wafer is then singulated along the streets with a laser, preferably having a beam narrower than the trenches. Multiple, laterally spaced lasers may be used in combination during a single pass to perform simultaneous singulating cuts. Additional edge protection for integrated circuitry on the active surface of the semiconductor dice may be provided by forming trenches or channels along the streets in the active surface instead of the bottom surface, disposing protective material along the streets and within the trenches prior to singulation and cutting through the wafer, leaving protective material on the sidewalls of the channels.

Abstract: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

Abstract: A wafer containing a plurality of die separated by streets which are to be sawn has a nitride passivation layer which has openings over die contact locations and gaps leaving nitride strips along the streets. The gaps in the nitride along the streets expose an oxide, preferably TEOS. A nickel/gold plate contact material overlies the nitride layer and contacts the exposed die contact areas but does not adhere to either the nitride surface or the oxide surfaces. A saw blade can then cut along the streets without being gummed by the metalizing and without producing cracks which propagate into the die termination areas.

Abstract: Disclosed is a carrierless chip package for integrated circuit devices, and various methods of make same. In one illustrative embodiment, the device includes an integrated circuit chip comprising an exposed backside surface defining a plane, a plurality of wire bonds that are conductively coupled to the integrated circuit chip, each of the plurality of wire bonds being conductively coupled to a conductive exposed portion, a portion of the conductive exposed portion being positioned in the plane defined by the backside surface, and an encapsulant material positioned adjacent the integrated circuit chip and the plurality of wire bonds.

Abstract: To prevent semiconductor chips from adhering to the trays during transport, a method is employed which transports semiconductor chips in the following state. When trays provided with a plurality of accommodating portions having a recessed cross section for accommodating semiconductor chips on a main surface thereof are stacked in a plurality of stages, the semiconductor chips are accommodated in spaces defined by the accommodating portions formed over the main surface of the lower-stage tray and corresponding accommodating portions formed over the back surface of the upper-stage tray. Here, on bottom surfaces of the accommodating portions formed over the back surface of the upper-stage tray, isolated projections having a height which prevents the projections from coming into contact with the semiconductor chips are arranged in a scattered manner. In this way, it is possible to prevent the semiconductor chips from adhering to the back surface of the upper-stage tray.

Abstract: The invention provides a semiconductor device and a manufacturing method thereof where mounting strength and accuracy can be improved without making processes complex. Grooves are formed on a back surface of a semiconductor substrate along a dicing line. Via holes are formed penetrating the semiconductor substrate from its back surface to pad electrodes. Embedded electrodes are then formed in the via holes, and a wiring layer connected with the embedded electrodes is formed extending to a region near a dicing line. Conductive terminals are formed at end portions of the wiring layer. Then, dicing is performed along the dicing line to complete the semiconductor device having inclined surfaces at end portions of its back surface. When the semiconductor device is connected with the circuit board by a reflow process, conductive paste having increased fluidity covers the conductive terminals and the inclined surfaces.

Abstract: An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.

Abstract: A method of fabricating microelectromechanical systems devices is disclosed. A silicon substrate having a plurality of microelectromechanical systems elements formed on a first surface thereof is provided. A guard layer defining a plurality of recesses is applied to the silicon substrate such that respective microelectromechanical systems elements are located within respective recesses. The silicon substrate is then segmented into discrete parts and an adhesive layer is bonded to a second surface of the silicon substrate. The guard layer is next segmented into discrete parts corresponding to the discrete parts of the silicon substrate, thereby forming individual microelectromechanical systems devices. Finally, the adhesive layer is selectively exposed to a light source allowing removal of individual microelectromechanical systems devices.

Abstract: To provide a method of producing an electronic apparatus that is inexpensive, contributes to high productivity, and can achieve good communication characteristics. A method of producing an electronic apparatus composed of an IC chip (100) having an external electrode formed on each of a set of opposing surfaces of the IC chip; an antenna circuit (201) having a slit formed in it; and a short circuit plate (300) for electrically connecting the IC chip (100) and the antenna circuit (201). In the method, a disc-like conveyor (703) has hands (704) on its outer periphery, and each hand (704) is capable of holding a single IC chip (100). The hands (704) hold IC chips (100) individually, and the IC chips (100) are conveyed by rotation of the disc-like conveyor (703). As a result, a plurality of IC chips (100) whose maximum number is equal to the number of the hands (704) can be simultaneously conveyed.

Abstract: Methods of manufacturing a family of packaged integrated circuits (ICs) having at least two different logic capacities. A first IC die includes two different portions, of which at least one portion can be deliberately rendered non-operational in some manner (e.g., non-functional, inaccessible, and/or non-programmable) within the package. A first set of the first IC dies are packaged such that both portions of the dies are operational. A second set of the first IC dies are packaged such that only the first portion of each die is operational. Once the first and second sets are packaged and the second set of ICs has been evaluated, a decision is made whether or not to manufacture a second IC die that includes the first portion of the first die, while excluding the second portion.

Abstract: There is provided a method of manufacturing an electro-optical device from a large substrate that is cut into a plurality of first substrates having a chip shape. In the electro-optical device, second substrates of a chip shape are bonded to the first substrates. The method includes adhering a large glass substrate to approximately an entire surface of the large substrate opposite to a surface to which the second substrates are bonded; and cutting both the large substrate and the large glass substrate into first substrate units.

Abstract: A Radio Frequency Identification (RFID) tag. The RFID tag comprises a flexible substrate and an integrated circuit embedded within the flexible substrate. The top surface of the integrated circuit is coplanar with the flexible substrate. At least one conductive element is formed on the flexible substrate. The conductive element is electrically connected to the integrated circuit. The conductive element serves as an antenna for the RFID tag.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: A module substrate defined by an aggregate substrate is prepared, and circuit components are mounted on the module substrate. An insulating resin layer is formed on substantially the entire top surface of the module substrate such that the circuit components are disposed in the insulating resin layer, and a top-surface-shielding layer is formed on the top surface of the insulating resin layer. First through holes are formed in the module substrate and the insulating resin layer at locations corresponding to portions of boundary lines of small substrates so as to extend in a thickness direction of the module substrate and the insulating resin layer. First electrode films are formed on the inner surfaces of the first through holes so as to be connected to the first shielding layer, and the first through holes are filled with a filling material.

Abstract: Methods are disclosed for manufacturing RFID tags and antennas for RFID tags. The methods described herein facilitate registration of the chip of the RFID tag with its antenna during chip placement. RFID tags and antennas are also disclosed.

Abstract: A system predicts die loss for a semiconductor wafer by using a method referred to as universal in-line metric (UILM). A wafer inspection tool detects defects on the wafer and identifies the defects by various defect types. The UILM method applies to various ways of classification of the defect types and takes into account the impact of each defect type on the die loss.

Abstract: A production equipment includes a substrate 2 placed inside and having a plurality of semiconductor elements 3 mounted thereon, and a resin molding mold 20 having a cavity 21. The mold 20 has resin injection ports 29a and air release ports 30a. Each of the resin injection ports 29a is formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element 3. Each of the air release ports 30a is formed around each of the resin injection ports 29a.

Abstract: Some embodiments of the present invention relate to an electronic assembly that includes a substrate and a die. The electronic assembly further includes an alignment bump on one of the die and the substrate and a group of mating bumps on the other of the die and the substrate. The group of mating bumps is positioned such that if the alignment bump engages each of the mating bumps, the die is appropriately positioned relative to the substrate at that location where the alignment bump engages the group of mating bumps. In some embodiments, the alignment bump extends from the substrate while in other embodiments the alignment bump extends from the die. The alignment bump on the substrate (or die) may be part of a plurality of alignment bumps such that each alignment bump engages a different group of mating bumps on the die (or substrate).

Abstract: A packaging method including assembling components on a substrate, manufacturing a lid assembly to include a plurality of integrated covers, and mating the lid assembly to the substrate.

Abstract: A midair semiconductor device includes a Si substrate provided with an element part on its front surface side. An opening is formed in the Si substrate in such a manner that a rear surface of the element part is exposed. The opening is provided below the element part while penetrating through the Si substrate. The front surface side of the Si substrate is sealed with a first cap part such as a Si cap such that a portion above the element part is brought into a midair state. A second cap part such as a Si cap is bonded to the rear surface side of the Si substrate so that the opening is sealed.

Abstract: An integrated circuit package assembly formed by stacking flip-chip mounted substrates interleaved with precisely dimensioned spacers and then bonded by injection molding the stack. The sides of the stack are sawed off to expose vias in the substrates, and multilevel-interconnect substrates are precisely aligned on the sides of the stack. Solder pads on the interconnect substrates are reflowed to form a solder connection to the exposed vias, allowing complex interconnection between diverse points along the edge connectors of each substrate. In one embodiment, solder balls are reflowed on ball-grid-array pads at the top of the stack to provide external electrical connections.

Abstract: A method is for packaging a first device having a first major surface and a second major surface. An encapsulant is formed over a second major surface of the first device and around sides of the first device. This leaves the first major surface of the first device exposed. A first dielectric layer is formed over the first major surface of the first device. a side contact interface is formed having at least a portion over the first dielectric layer. The encapsulant is cut to form a plurality of sides of encapsulant. A portion of the encapsulant is removed along a first side of the plurality of sides to expose a portion of the side contact interface along the first side of the plurality of sides.

Abstract: A method of wafer stacking packaging. The method comprises providing a die array including a plurality of singulated first dies cut from a first wafer; providing a second wafer with inseparate the second dies and an adhesive layer on an active surface thereof; pre-cutting the second wafer to a specified depth from the active surface thereof; stacking the active surface of second wafer onto a backside of the first dies, wherein each of the second dies only stack on one of the first dies; thinning the second wafer from the backside thereof to form a plurality of singulated the second dies stacked on the first dies simultaneously.

Abstract: A semiconductor stack package includes lower and upper individual packages. When the upper individual package is stacked on the lower individual package, a heat-conducting layer provided under the upper package touches a heat-mediating layer provided on the lower package. Thus, a layer of trapped air found in conventional stack packages is eliminated, and a direct heat-dissipating path is produced through both the heat-conducting layer and the heat-mediating layer. Therefore, the heat dissipation of the stack package is improved. Alternatively, the stack package may have a symmetric configuration in which each IC chip faces away from each other. A memory module has several stack packages mounted on one or both surfaces of a module board. The method includes forming the packages and stacking the packages. The method further includes forming a module board and mounting the stack packages on the module board.

Abstract: A flip-chip bump carrier type package is formed by providing a sheet of metal foil and forming cavities in a first surface of the sheet. The cavities are plated with a conductive metal to form external interconnects. An insulating film is formed over the metal foil first surface and the plated cavities and then vias are formed in the insulating film. The vias contact respective ones of the plated cavities. The vias are then plated and a solder resist film is formed over the insulating film and the plated vias. The solder resist film is processed to form exposed areas above the vias, which areas are then plated with a conductive metal. A bumped semiconductor die is attached to the first surface of the metal foil, where the die bumps contact respective ones of the plated, exposed areas, which electrically connects the die to the plated cavities. Finally, the sheet of metal foil is removed so that outer surfaces of the plated cavities are exposed.

Abstract: A technique for manufacturing an electronic assembly includes a number of steps. Initially, a backplate with a cavity formed into a first side of the backplate is provided. Next, a substrate with a first side of an integrated circuit (IC) die mounted to a first side of the substrate is provided. The IC die is electrically connected to one or more of a plurality of electrically conductive traces formed on the first side of the substrate. The substrate includes a hole approximate an outer edge of the IC die. The first side of the substrate is then positioned in contact with at least a portion of the first side of the backplate. The IC die is positioned within the cavity with a second side of the IC die in thermal contact with the backplate. The substrate and at least a portion of the backplate are overmolded with an overmold material, which enters the cavity through the hold to substantially underfill the IC die and substantially fill an unoccupied portion of the cavity.

Abstract: In one embodiment of the invention, a lead-frame is designed for use in IC packages such as those conforming to the TO 220 standard or other standards for power packages. The device areas of the lead-frame are arranged in columns, and each column is molded so as to expose a portion of the leads. The device areas can then be cingulated by sawing, as in conventional QFN packages. In this manner, packages conforming to power package standards such as the TO 220 standard can be produced much quicker and cheaper than they can in conventional trim and forming methods.

Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

Abstract: Some embodiments of the present invention relate to a semiconducting device that includes an interposer having a fold which divides the interposer into a first section and a second section. A first die is attached to a first surface of the interposer at the first and second sections of the interposer. The semiconducting device further includes a contact that is attached to the first surface of the interposer at the first section and the second section. A second die is attached to a second surface of the interposer such that the second die is stacked onto the first die and is electrically coupled to the first die by the contact and conductive paths that are part of the interposer.

Abstract: A semiconductor package comprises a substrate which includes a plurality of conducting traces and upper contact areas on its upper surface and a second plurality of lower conductive traces and external contact areas on its bottom surface and external conducting members attached to the external contact areas. The semiconductor package also includes a semiconductor die comprising an active surface with a plurality of die contact pads, electrically connected to the contact areas of the substrate by conducting members. A support layer between the conducting members on the active surface of the semiconductor die covers at least the base portion of the conducting members. A method relates to the production of the semiconductor package.

Abstract: A process for producing flexible MEMS thin film without a manufactured substrate applied in a MEMS manufacture specially includes a method of forming a component interface in the middle between a manufactured substrate and a MEMS thin film formed on the manufactured substrate as a basis, which component interface is so easily destroyed by an external force that the MEMS thin film produced by the mentioned process is easily separated from the manufactured substrate, and the separated MEMS thin film due to out of limitation from the manufactured substrate may be further processed in later working process to obtain a MEMS thin film with special structural features has flexibility and particularly has electrical circuits, micro structure, or MEMS components integrated and manufactured into inside or on its both sides.

Abstract: Disclosed are a semiconductor chip package and a method for fabricating the same. The semiconductor chip package includes a semiconductor chip and a circuit board. The semiconductor chip is bonded to the circuit board by means of adhesive except for a metal-exposed region of the semiconductor chip. Anti-migration material is formed between the circuit board and a predetermined portion of the semiconductor chip, in which the predetermined portion of the semiconductor chip has no adhesive, in order to prevent material contained in the metal trace from migrating to the metal-exposed region of the semiconductor chip. A lamination phenomenon is not created between the circuit board and the semiconductor chip after the HAST has been carried out.

Abstract: A semiconductor device which has a semiconductor body and a method for producing it. At the semiconductor body, a first electrode which is electrically connected to a first near-surface zone of the semiconductor body and a second electrode which is electrically connected to a second zone of the semiconductor body are arranged. A drift section is arranged between the first and the second electrode. In the drift section, a coupling structure is provided for at least one field plate arranged in the drift section. The coupling structure has a floating first area doped complementarily to the drift section and a second area arranged in the first area. The second area forms a locally limited punch-through effect or an ohmic contact to the drift section, and the field plate is electrically connected at least to the second area.

Abstract: A method of packaging a microchip device, an interposer for packaging, and a packaged microchip device. An interposer is placed on microchip devices. The interposer includes an aperture which extends from the interposer surface where external electrical contacts are located on the surface of the microchip devices. Electrical contacts on the microchip device surface are accessible through the aperture in order to electrically connect the electrical contacts with the external electrical contacts of the interposer. The aperture is divided into at least two openings or aperture regions, separated by a bridge. This facilitates the handling of the interposer.

Abstract: The invention provides a taped lead frame for use in manufacturing electronic packages. The taped lead frame is composed of a tape and a lead frame formed from a plurality of individual metal features attached to the tape and arranged in a footprint pattern. The method of making the invention enables the thickness of conventional frames to shrink significantly to result in thinner packages for improved heat dissipation and shorter geometries for improved electrical performance. A plurality of such lead frames are arranged in an array on a sheet of tape and each lead frame is separated from surrounding lead frames by street regions on the tape such that no metal feature extends into a street region. Integrated circuit chips are attached and electrically connected to the lead frames and an encapsulant is applied, cured and dried over the lead frames and the street regions.

Abstract: There are provided a semiconductor device construction having more degrees of design freedom of the semiconductor element than prior arts, and a method of manufacturing such device easily and at low cost. For this purpose, a rearrangement sheet is employed provided with an insulating sheet and conductive metallic patterns formed on this insulating sheet.

Abstract: A method of fabricating wafer level package is provided. First, a wafer having a front and a rear surfaces is provided. Several fosses are then formed on the front surface of the wafer. Next, an insulative layer is formed on a surface of each fosse; a conductive layer is then formed on part of the front surface of the wafer and the insulative layer of each fosse. A solder layer is formed on the conductive layer above each fosse. Afterward, a first substrate is attached to the front surface. Several holes are formed on the rear surface, and the holes baring the solder layer are positioned corresponding to the fosses. Then, a second substrate is attached to the rear surface of the wafer. The second substrate has several conductive pillars correspondingly inserted into the holes for connecting the solder layers. Next, the conductive structures are formed on the second substrate.

Abstract: A semiconductor package assembly and method for electrically isolating modules, having a capacitor within the semiconductor package assembly. The package assembly and method are suitable for electrically isolating modules according to IEEE 1394.

Abstract: A method of fabricating wafer level package is provided. The method includes the following steps. Firstly, a wafer having a front surface and a rear surface is provided, and the front surface has several conductive pads. Next, a supporting material is attached on the front surface. Then, several holes are formed on the wafer, and the holes run from the rear surface to the front surface. A first substrate is attached on the rear surface. The first substrate has several conductive pillars correspondingly inserted into the holes. Afterwards, the supporting material is removed to expose the conductive pillars on the front surface, and a patterned circuit is formed on the front surface. Next, a second substrate is attached on the patterned circuit. Then, several conductive structures are formed on the first substrate.