Abstract: A fuse structure (106) includes a patterned conductor disposed over a passivation layer (302), which is disposed over a substrate (110), such as, for example, an inter-layer dielectric layer of an integrated circuit. A second passivation layer (112) is formed over the integrated circuit including over the fuse structure (106), and then patterned to open a window (108) through the second passivation layer (112) at a location over the fuse structure (106), with the window (108) fully landed by the underlying passivation layer (302). In various aspects of the present invention, the fuse (106) may be programmed either before or after the photoresist layer used in the patterning of the second passivation layer (112) is removed.

Abstract: Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: A semiconductor device includes a first interlayer insulating film formed on a semiconductor substrate; a second interlayer insulating film formed on the first interlayer film and including a plurality of grooves; a first barrier metal formed on inner surfaces of the grooves; a first interconnect part and a first bonding electrode part including a copper film formed on the first barrier metal; a second barrier metal formed on the first interconnect part and the first bonding electrode part; a second interconnect part including a metal film formed on the first interconnect part via the second barrier metal; a second bonding electrode part including a metal film formed on the first bonding electrode part via the second barrier metal; and a third interlayer insulating film formed on the second interlayer insulating film, the second interconnect part, and the second bonding electrode part, and including an opening that allows exposure of the surface of the second bonding electrode part.

Abstract: A fuse device has a fuse element provided with a first terminal and a second terminal and an electrically breakable region, which is arranged between the first terminal and the second terminal and is configured to undergo breaking as a result of the supply of a programming electrical quantity, thus electrically separating the first terminal from the second terminal. The electrically breakable region is of a phase-change material, in particular a chalcogenic material, for example GST.

Abstract: A fuse circuit for sensing a fuse connected state and layout designing method thereof are disclosed. Embodiments include a fuse program control unit providing a fuse open voltage in response to a program signal, a fuse cell unit configured to use a contact resistor connecting a node supplied with the fuse open voltage and a node supplied with a fuse connection voltage as a fuse, the fuse cell unit outputting a state information of the contact resistor in response to the fuse open voltage, and a fuse sensing unit outputting a fuse data signal corresponding to the state information of the contact resistor in response to a read signal. Accordingly, embodiments reduce a layout size of the fuse circuit.

Abstract: A method for fabricating a semiconductor device with a fuse element includes providing a semiconductor structure with a fuse element formed over a first device region thereof. A first interlayer dielectric layer, an etching stop layer and a second interlayer dielectric layer are sequentially formed. A bond pad is formed over the second interlayer dielectric layer in a second device region of the semiconductor structure. A passivation layer is formed over the bond pad and the second interlayer dielectric layer. A first etching process is performed to form a first opening in the first device region and a second opening in the second device region, wherein the first opening exposes a portion of the second interlayer dielectric layer over the fuse element and, and the second opening partially exposes a portion of the bond pad. A second etching process and a third etching process are performed to leave another passivation layer conformably covering the fuse element and the semiconductor structure adjacent thereto.

Abstract: The present invention discloses a fuse of a semiconductor device and manufacturing method thereof. The fuse of a semiconductor device of the present invention includes a first conductive pattern; and a second conductive pattern which is separated from the first conductive pattern with a given gap, wherein the first conductive pattern and the second conductive pattern are melted in a laser irradiation to be connected. Accordingly, the present invention prevents the damage of the adjacent fuse in the repair process, enabling to improve the reliability of device and accomplish the high integration.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: A fuse structure for an integrated circuit device includes an elongated metal interconnect layer defined within an insulating layer; a metal cap layer formed on only a portion of a top surface of the metal interconnect layer; and a dielectric cap layer formed on both the metal cap layer and the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon; wherein the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon are susceptible to an electromigration failure mechanism so as to facilitate programming of the fuse structure by application of electric current through the elongated metal interconnect layer.

Abstract: A contact efuse structure includes a silicon layer and a contact contacting the silicon layer with one end. When a voltage is applied to the contact, a void is formed at the end of the contact, and thus the contact is open. Such structure may be utilized in an efuse device or a read only memory. A method of making a contact efuse device and a method of making a read only memory are also disclosed.

Abstract: A fuse structure for an IC device and methods of fabricating the structure are provided. The fuse structure comprises a metal-containing conductive strip formed over a portion of a semiconductor substrate. A dielectric layer is formed over the semiconductor substrate, covering the conductive strip. A first interconnect and a second interconnect are formed in vias extending through the dielectric layer, each physically and electrically connecting to a part of the conductive layer. First and second wiring structures are formed over the dielectric layer in electrical contact with the first and second interconnects respectively. The contact area between one of the interconnects and the strip is chosen so that electromigration will occur when a pre-selected current is applied to the fuse structure.

Abstract: An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

Abstract: A fuse structure, a method for fabricating the fuse structure and a method for programming a fuse within the fuse structure each use a fuse material layer that is used as a fuse, and located upon a monocrystalline semiconductor material layer in turn located over a substrate. At least part of the monocrystalline semiconductor material layer is separated from the substrate by a gap. Use of the monocrystalline semiconductor material layer, as well as the gap, provides for enhanced uniformity and reproducibility when programming the fuse.

Abstract: A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening.

Abstract: Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

Abstract: Fuses and methods of forming fuses. The fuse includes: a dielectric layer on a semiconductor substrate; a cathode stack on the dielectric layer, a sidewall of the cathode stack extending from a top surface of the cathode stack to a top surface of the dielectric layer; a continuous polysilicon layer comprising a cathode region, an anode region, a link region between the cathode and anode regions and a transition region between the cathode region and the link region, the transition region proximate to the sidewall of the cathode stack, the cathode region on a top surface of the cathode stack, the link region on a top surface of the dielectric layer, both a first thickness of the cathode region and a second thickness of the link region greater than a third thickness of the transition region; and a metal silicide layer on a top surface of the polysilicon layer.

Abstract: A test structure and a method for fabricating the same are disclosed. The test structure includes a plurality of sampling lines over a substrate located between a plurality of a first grounding lines and a plurality of a second grounding lines. The sampling lines are selectively electrically coupled to the first grounding line or the second grounding line and include at least one programmed defect. A double-patterning fabricating approach is utilized to produce such test structure which may be applied to a charged particle beam such as an electron-beam defect inspection system.

Abstract: A fuse box of a semiconductor device includes a plurality of metal fuses formed on a first interlayer dielectric of a semiconductor substrate and previously removed in blowing regions thereof; a conductive oxidation layer formed to cover removed blowing regions of the metal fuses; a second interlayer dielectric formed on the first interlayer dielectric including the conductive oxide layer; and a plurality of plugs formed in the second interlayer dielectric to be brought into contact with the metal fuses which are removed in the blowing regions thereof.

Abstract: The present invention relates to a fuse in a semiconductor device and method for fabricating the same. An oxide film is formed on sidewalls of a barrier metal layer in a bottom portion of a fuse pattern, thereby preventing the barrier metal layer from being exposed. As a result, the oxidation of the barrier metal layer is inhibited to improve characteristics of the device.

Abstract: Programmable power management using a nanotube structure is disclosed. In one embodiment, a method includes coupling a nanotube structure of an integrated circuit to a conductive surface when a command is processed, and enabling a group of transistors of the integrated circuit based on the coupling the nanotube structure to the conductive surface. A current may be applied to the nanotube structure to couple the nanotube structure to the conductive surface. The nanotube structure may be formed from a material chosen from one or more of a polymer, carbon, and a composite material. The group of transistors may be enabled during an activation sequence of the integrated circuit. In addition, one or more transistors of the group of transistors may be disengaged from the one or more power sources (e.g., to minimize leakage) when the nanotube structure is decoupled from the conductive surface.

Abstract: An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.

Abstract: There is provided a semiconductor device excellent in reliability. The semiconductor device is comprised of a semiconductor substrate, an insulating portion having a multilayer insulating film composed of an etch stopper film, an insulating film, an etch stopper film, an insulating film, an etch stopper film and an insulating film provided on an upper portion of the semiconductor, fuses provided on the insulating portion, and a seal ring composed of a copper containing metal film, a barrier metal film, a copper containing metal film and a barrier metal film embedded in the insulating portion so as to surround a region just below the fuses.

Abstract: A semiconductor fabrication process and apparatus are provided for forming passive devices, such as a fuse (93) or resistor (95), in an active substrate region (103) by using heavy ion implantation (30) and annealing (40) to selectively form polycrystalline structures (42, 44) from a monocrystalline active layer (103), while retaining the single crystalline regions in the active layer (103) for use in forming active devices, such as NMOS and/or PMOS transistors (94). As disclosed, fuse structures (93) may be fabricated by forming silicide (90) in an upper region of the polycrystalline structure (42), while resistor structures (95) may be simultaneously formed from polycrystalline structure (44) which is selectively masked during silicide formation.

Abstract: An electrically programmable fuse (eFuse) comprises a semiconductor layer, a silicide layer overlying the semiconductor layer, and first and second contact structures electrically coupled to the silicide layer. The first contact structure is configured to function as an anode and the second contact structure is configured to function as a cathode. The eFuse further comprises a back-gate structure disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure.

Abstract: A method of forming a pad and a fuse in a semiconductor device. A copper layer located in both a fuse region and a pad region is formed in a dielectric layer. A first insulating layer is formed on the dielectric layer to cover the copper layer and selectively etched to expose the copper layer in the fuse region. An aluminum fuse is formed on the first insulating layer in the fuse region and connected to the exposed copper layer. A second insulating layer is formed on both the aluminum fuse and the first insulating layer and selectively etched together with the first insulating layer to expose the underlying copper layer in the pad region. An aluminum pad is formed on the second insulating layer in the pad region and connected to the exposed copper layer in the pad region. At least one third insulating layer is formed on both the aluminum pad and the second insulating layer and selectively etched to expose the aluminum pad only.

Abstract: A method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element is disclosed. In one embodiment, at least one metallization layer is applied onto a substrate. A hard mask is applied onto the at least one metallization layer. The at least one metallization layer is wet chemically etched by using the hard mask and the fuse element. The fuse-memory element or the resistor element is formed in a region in which the at least one metallization layer has been etched.

Abstract: The disclosure relates generally to integrated circuit (IC) chip fabrication, and more particularly, to an e-fuse device including an opening, a first via and a second via in an interlayer dielectric, wherein the opening, the first via and the second via are connected to an interconnect below the interlayer dielectric; a dielectric layer that encloses the first via and the second via; and a metal layer over the dielectric layer, wherein the metal layer fills the opening with a metal, and wherein the first via and the second via are substantially empty to allow for electromigration of the interconnect during re-programming of the e-fuse device.

Abstract: In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes (1) forming a first conductor; (2) forming a steering element above the first conductor; (3) forming a first conducting layer above the first conductor; (4) forming a CNT material above the first conducting layer; (5) implanting a selected implant species into the CNT material; (6) forming a second conducting layer above the CNT material; (7) etching the first conducting layer, CNT material and second conducting layer to form a metal-insulator-metal (MIM) stack; and (8) forming a second conductor above the CNT material and the steering element. Numerous other aspects are provided.

Abstract: An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: Electrically programmable fuse structures for an integrated circuit and methods of fabrication thereof are presented, wherein the electrically programmable fuse has a first terminal portion and a second terminal portion interconnected by a fuse element. The first terminal portion and the second terminal portion reside over a first support and a second support, respectively, with the first support and the second support being spaced apart, and the fuse element bridging the distance between the first terminal portion over the first support and the second terminal portion over the second support. The fuse, first support and second support define a ?-shaped structure in elevational cross-section through the fuse element. The first terminal portion, second terminal portion and fuse element are coplanar, with the fuse element residing above a void, which in one embodiment is filed by a thermally insulating dielectric material that surrounds the fuse element.

Abstract: A semiconductor device manufacturing method including forming a dummy capacitor in a fuse region to avoid a step height between plate electrodes in a cell region and in a fuse region, is disclosed herein. The method can be used so that only an insulating film at a target thickness may remain on an upper part of the plate electrode in the fuse region during an etching process for forming a fuse open region, and a fuse failure due to laser blowing can be prevented.

Abstract: The present invention provides a method of integrating a structure, e.g. a fuse, for use in a semiconductor device, the method comprises several steps, the first step is providing a first layer of sacrificial material (1) on a substrate. The second step is providing the structure (5) on the first layer of sacrificial material, the structure having two terminal portions. The third step is providing a second layer of sacrificial material (3) over the first layer of sacrificial material and over a length of the structure between the terminal portions such that the length of the structure is surrounded by sacrificial material, said length defining a usable portion of the structure. The fourth step is providing a layer of dielectric material such that the first and second layers of sacrificial material and the structure are encased by the layer of dielectric material and the substrate. The fifth step is forming a passage through the dielectric material to provide access to the sacrificial material.

Abstract: There is provided a semiconductor chip having fuses. The semiconductor chip includes fuses each having a first terminal electrically connected to a first logic circuit, a second terminal electrically connected to a second logic circuit, and a blowable region formed between the first terminal and the second terminal; and fuse residues each having the same patterns with those of the first terminal and the second terminal of the fuses, and configured so that patterns corresponded to the first terminals and the second terminals are electrically disconnected from each other.

Abstract: A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 ?m and less than or equal to 10 ?m, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.

Abstract: An e-fuse structure and method has an anode; a fuse link (a first end of the fuse link is connected to the anode); a cathode (a second end of the fuse link opposite the first end is connected to the cathode); and a silicide layer on the fuse link. The silicide layer has a first silicide region adjacent the anode and a second silicide region adjacent the cathode. The second silicide region comprises an impurity not contained within the first silicide region. Further, the first silicide region is thinner than the second silicide region.

Abstract: In a semiconductor device having a plurality of fuses and a method of fabricating the same, the semiconductor device comprises an inter-layer dielectric layer on a semiconductor substrate; a plurality of fuses on the inter-layer dielectric layer, an inter-metallic dielectric layer on the plurality of fuses and the inter-layer dielectric layer, a passivation layer on the inter-metallic dielectric layer, fuse windows exposing portions of a top surface and sidewall surfaces of the plurality of fuses, and a fuse barrier pattern between adjacent ones of the plurality of the fuses.

Abstract: A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by a wider interval than the interval between the runner lines. A via in the interlayer insulating film connects a fuse line and a runner line to each other.

Abstract: The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a second conductive layer, the first and second conductive layers separated by a barrier layer having a first diffusivity different than a second diffusivity of the first conductive layer. A void is created in the first conductive layer by driving an electrical current through the e-fuse device.

Abstract: An e-fuse structure and method has anode, a fuse link, and a cathode. The first end of the fuse link is connected to the anode and the second end of the fuse link opposite the first end is connected to the cathode. This structure also includes a first silicide layer on the anode and the fuse link and a second silicide layer, different than the first silicide layer, on the cathode. The difference between the first silicide layer and the second silicide layer causes an enhanced flux divergence region at the second end of the fuse link.

Abstract: A fuse structure for an integrated circuit device includes an elongated metal interconnect layer defined within an insulating layer; a metal cap layer formed on only a portion of a top surface of the metal interconnect layer; and a dielectric cap layer formed on both the metal cap layer and the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon; wherein the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon are susceptible to an electromigration failure mechanism so as to facilitate programming of the fuse structure by application of electric current through the elongated metal interconnect layer.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer.

Abstract: A method and apparatus for providing ESD protection of an integrated circuit using a temporary conductive coating. The method deposits a temporary conductive coating upon a chip die between contacts to be protected such that a conductive path is created between contacts, provides a carrier substrate that is then bonded to the chip die and then the conductive coating is deactivated to ready the device for use. The deactivation of the conductive coating may involve physical removal of the conductive coating (or a portion thereof), oxidation of the conductive coating to form a non-conductive coating, or some other process to interrupt the conductive path between contacts. The apparatus of the invention is a chip having a temporary conductive coating deposited thereon to protect the integrated circuit from ESD events.

Abstract: A filter assembly includes an electrically conductive input member, an electrically conductive output member, and filter elements. Each filter element includes a connection disposed in an open or closed configuration, and a band filter, which may be a band-pass filter or a band-stop filter. A generic filter assembly is first manufactured having all connections in their open or closed configurations. A channel-selective filter assembly is then further manufactured by structural modification of one or more of the connections. Each connection of the channel-selective filter assembly is in its open or closed configuration independently of each other connection of each other filter element. Each frequency channel in a cable television (CATV) network, for example, is restricted or permitted by the channel-selective filter assembly.

Abstract: A semiconductor device that has a reduced fuse thickness without compromising the bondability of an associated pad and a method for manufacturing the same is described. The semiconductor device includes a pad and a fuse formed on a planar level. The pad and fuse are formed using a metal according to the metal used for the planar level on which the pad and fuse are formed. The pad is formed such that the center portion of the pad is positioned lower than that of the fuse. During the opening of the pad, the thickness of the fuse is reduced without reducing the thickness of the pad. A subsequent repair process can then be easily performed on the fuse having the reduced thickness without degrading the bondability of the pad.

Abstract: An integral circuit protection device includes a substrate disposed between first and second terminals. The substrate is composed of a resistive material. A first conductive layer is disposed on a first surface of the substrate and in electrical contact with the first terminal. A second conductive layer is disposed on a second surface of the substrate. A first electrically insulating layer is disposed on the second conductive layer and substantially covers the second conductive layer. The first electrically insulating layer includes an aperture. A fuse element is disposed on the first electrically insulating layer and is in electrical contact with the second conductive layer through the aperture and in electrical contact with the second terminal. The fuse element is in electrical series with the resistive material. A second electrically insulating layer is disposed over the fuse element.

Abstract: A fuse part of a semiconductor device includes an insulation layer over a substrate, and a fuse over the insulation layer, wherein the fuse includes a plurality of blowing pads for irradiating a laser beam and the plurality of blowing pads have laser coordinates different from one another.