Abstract: A device and a method for realizing reliable electrical contacts at low temperature and low pressure between conducting materials on, for example, different substrates are disclosed. In one aspect, a rough and brittle intermetallic layer is formed on a conducting material on a first substrate. A soft solder material layer on the other substrate is used for contacting the brittle and rough intermetallic layer that will break. As the solder material is relatively soft, contact between the broken intermetallic layer and the solder material can be realized over a large portion of the surface area. At that stage, a second intermetallic layer is formed between the solder material and the first intermetallic layer realizing electrical contact.

Abstract: A semiconductor device comprising stacked substrates through a bump, the bump comprising a solder bump formed on a copper bump wherein the solder bump includes Zn.

Abstract: Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over the liner and between the posts. A planarized surface is formed which extends across the posts and across one or both of the liner and the fill material. Some embodiments include a semiconductor construction containing a semiconductor die. Electrically conductive posts extend through the die. The posts have upper surfaces above a backside surface of the die, and have sidewall surfaces extending between the backside surface and the upper surfaces. A liner is across the backside surface of the die and along the sidewall surfaces of the posts. Electrically conductive caps are over the upper surfaces of the posts, and have rims along the liner adjacent the sidewall surfaces of the posts.

Abstract: A semiconductor package and a fabrication method thereof are disclosed, whereby an environmental problem is solved by using external connection terminals or semiconductor element-mounting terminals containing a smaller amount of lead, while at the same time achieving a fine pitch of the terminals. The semiconductor package includes a board (20) including a plurality of insulating resin layers, semiconductor element-mounting terminals (18) formed on the uppermost surface of the board, and external connection terminals (12) formed on the bottom surface thereof. Each external connection terminal (12) is formed as a bump projected downward from the bottom surface of the package, and each bump is filled with the insulating resin (14) while the surface thereof is covered by a metal (16). Wiring (24), (26) including a conductor via (26a) electrically connect the metal of the metal layer 16 and the semiconductor element-mounting terminals (18).

Abstract: A substrate structure includes a substrate body and a plurality of conductive pads formed on the substrate body and each having a first copper layer, a nickel layer, a second copper layer and a gold layer sequentially stacked. The thickness of the second copper layer is less than the thickness of the first copper layer. As such, the invention effectively enhances the bonding strength between the conductive pads and solder balls to be mounted later on the conductive pads, and prolongs the duration period of the substrate structure.

Abstract: Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Abstract: A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.

Abstract: A method of manufacturing an interconnect structure for a semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity.

Abstract: A semiconductor device includes a semiconductor chip having an element formation surface on which at least one element is formed and including a plurality of electrode pads formed on the element formation surface, an interconnect substrate having a principal surface facing the element formation surface of the semiconductor chip and including a plurality of connection pads formed at positions of the principal surface facing the respective corresponding electrode pads, and a plurality of solder bumps provided between the respective corresponding electrode pads and connection pads, and configured to electrically connect the respective corresponding electrode pads and connection pads together. An UBM layer is formed on a portion of each solder bump closer to the corresponding electrode pad and a barrier metal layer is formed on a portion of each solder bump closer to the corresponding connection pad, and the two layers have substantially the same composition of major materials.

Abstract: Structures are provided with raised buffer pads for solder bumps. Methods are also provided for forming the raised buffer pads for solder bumps. The method includes forming a raised localized buffer pad structure on a tensile side of a last metal layer of a solder bump connection. The raised localized buffer pad structure increases a height of a portion of a pad structure of the solder bump connection with respect to a compressive side of the last metal layer.

Abstract: Described is a method of forming a solder deposit on a substrate comprising the following steps i) provide a substrate including a surface bearing electrical circuitry that includes at least one contact area, ii) form a solder mask layer that is placed on the substrate surface and patterned to expose the at least one contact area, iii) contact the entire substrate area including the solder mask layer and the at least one contact area with a solution suitable to provide a conductive layer on the substrate surface, iv) electroplate a solder deposit layer containing a tin or tin alloy onto the conductive layer and v) etch away an amount of the solder deposit layer containing tin or tin alloy sufficient to remove the solder deposit layer from the solder mask layer area leaving a solder material layer on the at least one contact area.

Abstract: A resin containing a conductive particle and a gas bubble generating agent is supplied in a space between the substrates each having a plurality of electrodes. The resin is then heated to melt the conductive particle contained in the resin and generate gas bubbles from the gas bubble generating agent. A step portion is formed on at least one of the substrates. In the process of heating the resin, the resin is pushed aside by the growing gas bubbles, and as a result of that, the conductive particle contained in the resin is led to a space between the electrodes, and a connector is formed in the space. At the same time, the resin is led to a space between parts of the substrates at which the step portion is formed, and cured to fix the distance between the substrates.

Abstract: A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.

Abstract: In one embodiment, a semiconductor device has a topmost or highest conductive layer with at least one opening. The semiconductor device includes a semiconductor substrate having a cell array region and an interlayer insulating layer covering the substrate having the cell array region. The topmost conductive layer is disposed on the interlayer insulating layer in the cell array region. The topmost conductive layer has at least one opening. A method of fabricating the semiconductor device is also provided. The openings penetrating the topmost metal layer help hydrogen atoms reach the interfaces of gate insulating layers of cell MOS transistors and/or peripheral MOS transistors during a metal alloy process, thereby improve a performance (production yield and/or refresh characteristics) of a memory device.

Abstract: A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

Abstract: An exemplary method includes forming a vertical pillar overlying or laterally displaced from a bond pad overlying a semiconductor substrate, and applying a discrete solder sphere in combination with one of a solder paste or flux on a top surface of the pillar, wherein the one of the solder paste or flux is defined by at least one photoresist layer. The method may include applying a solder sphere and/or solder flux in different combinations on top surfaces of different first and second pillars.

Abstract: A bumping process includes providing a silicon substrate; forming a titanium-containing metal layer on silicon substrate, the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas; forming a first photoresist layer on titanium-containing metal layer; patterning the first photoresist layer to form a plurality of first opening slots; forming a plurality of copper bumps within first opening slots, said copper bump comprises a first top surface and a first ring surface; removing the first photoresist layer; forming a second photoresist layer on titanium-containing metal layer; patterning the second photoresist layer to form a plurality of second opening slots; forming a plurality of bump isolation layers at spaces, the first top surfaces and the first ring surfaces; forming a plurality of connective layers on bump isolation layers; removing the second photoresist layer, removing the second areas to form an under bump metallurgy layer.

Abstract: Method of forming a solder alloy deposit on a substrate comprising i) provide a substrate including a surface bearing electrical circuitry that includes at least one inner layer contact area, ii) form a solder mask layer on the substrate surface and patterned to expose at least one contact area, iii) contact the entire substrate area including the solder mask layer and the at least one contact area with a solution to provide a metal seed layer on the substrate surface, iv) form a structured resist layer on the metal seed layer, v) electroplate a first solder material layer containing tin onto the conductive layer, vi) electroplate a second solder material layer onto the first solder material layer, vii) remove the structured resist layer and etch away an amount of the metal seed layer sufficient to remove the metal seed layer from the solder mask layer area and reflow the substrate.

Abstract: An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer.

Abstract: A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

Abstract: Protection of a solder ball joint is disclosed in which the solder ball joint is located below the surface level of the encapsulating buffer layer. The buffering layer is etched to expose one or more electrode posts, each of which may be made up of a single column or multiple columns. A top layer resulting either from a top conductive cap or a plating layer around the electrode posts also lies below the buffer layer. When the solder ball is placed onto the posts, the solder/ball joint is protected in a position below the surface of the buffer layer, while still maintaining an electrical connection between the various solder balls and their associated or capping/plating material, electrode posts, wiring layers, and circuit layers. Therefore, the entire ball joint is protected from direct stress.

Abstract: A semiconductor device has a first insulating layer formed over a first surface of a polymer matrix composite substrate. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. The second conductive layer is wound to exhibit inductive properties. A third conductive layer is formed between the first conductive layer and second conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. A fourth insulating layer can be formed over a second surface of the polymer matrix composite substrate. Alternatively, the fourth insulating layer can be formed over the first insulating layer prior to forming the first conductive layer.

Abstract: An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

Abstract: A method forms a connecting pillar to a bonding pad of an integrated circuit. A seed layer is formed over the bond pad. Photoresist is deposited over the integrated circuit. An opening is formed in the photoresist over the bond pad. The connecting pillar is formed in the opening by plating.

Abstract: There is provided a method of manufacturing a substrate for flip chip, and a substrate for flip chip manufactured using the same. The method includes providing a base substrate including at least one conductive pad, forming a solder resist layer on the base substrate, the solder resist layer including a first opening exposing the conductive pad, forming a dry film on the solder resist layer, the dry film including a second opening connected with the first opening, forming a metal post in the first opening and a part of the second opening, filling the second opening above the metal post with solder paste, forming a solder cap by performing a reflow process on the filled solder paste, planarizing a surface of the solder cap, and removing the dry film. Accordingly, fine pitches and improve reliability can be achieved.

Abstract: A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.

Abstract: The invention provides a new method and chip scale package is provided. The inventions starts with a substrate over which a contact point is provided, the contact point is exposed through an opening created in the layer of passivation and a layer of polymer or elastomer. A barrier/seed layer is deposited, a first photoresist mask is created exposing the barrier/seed layer where this layer overlies the contact pad and, contiguous therewith, over a surface area that is adjacent to the contact pad and emanating in one direction from the contact pad. The exposed surface of the barrier/seed layer is electroplated for the creation of interconnect traces. The first photoresist mask is removed from the surface of the barrier/seed layer. A second photoresist mask, defining the solder bump, is created exposing the surface area of the barrier/seed layer that is adjacent to the contact pad and emanating in one direction from the contact pad.

Abstract: A structure and a method of manufacturing a Pb-free Controlled Collapse Chip Connection (C4) with a Ball Limiting Metallurgy (BLM) structure for semiconductor chip packaging that reduce chip-level cracking during the Back End of Line (BEOL) processes of chip-join cool-down. An edge of the BLM structure that is subject to tensile stress during chip-join cool down is protected from undercut of a metal seed layer, caused by wet etch of the chip to remove metal layers from the chip's surface and solder reflow, by an electroplated barrier layer, which covers a corresponding edge of the metal seed layer.

Abstract: A substrate structure with compliant bump comprises a substrate, a plurality of bumps, and a metallic layer, wherein the substrate comprises a surface, a trace layer, and a protective layer. The trace layer comprises a plurality of conductive pads, and each of the conductive pads comprises an upper surface. The protective layer comprises a plurality of openings. The bumps are formed on the surface, and each of the bumps comprises a top surface, an inner surface and an outer surface and defines a first body and a second body. The first body is located on the surface. The second body is located on top of the first body. The metallic layer is formed on the top surface, the inner surface, and the upper surface.

Abstract: Provided herein is a bump including a diffusion barrier bi-layer, the bump having: a conductive layer; a first diffusion barrier layer formed on or above the conductive layer, and comprising an alloy of nickel and phosphorus; a second diffusion barrier formed on or above the first diffusion barrier layer, and comprising copper; and a solder layer formed on or above the second diffusion barrier layer. A manufacturing method for producing a bump is also provided.

Abstract: Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface.

Abstract: A manufacturing method of a semiconductor device includes: forming a columnar electrode on a semiconductor wafer; flip-chip bonding a second semiconductor chip onto the semiconductor wafer; forming a molding portion on the semiconductor wafer, the molding portion covering and molding the columnar electrode and the second semiconductor chip; grinding or polishing the molding portion and the second semiconductor chip so that an upper face of the columnar electrode and an upper face of the semiconductor chip are exposed; and cutting the molding portion and the semiconductor wafer so that a first semiconductor chip, where the second semiconductor chip is flip-chip bonded and the columnar electrode is formed, is formed.

Abstract: A bump manufacturing method may be provided. The bump manufacturing method may include forming a bump on an electrode pad included in a semiconductor device, and controlling a shape of the bump by reflowing the bump formed on the semiconductor device under an oxygen atmosphere.

Abstract: Multiple surface finishes are applied to a substrate for a microelectronics package by applying a first surface finish to connection pads of a first area of the substrate, masking the first area of the substrate without masking a second area of the substrate, applying a second different surface finish to connection pads of the second area of the substrate, and removing the mask.

Abstract: A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.

Abstract: A through-substrate via (TSV) structure that is immune to metal contamination due to a backside planarization process is provided. After forming a through-substrate via (TSV) trench, a diffusion barrier liner is conformally deposited on the sidewalls of the TSV trench. A dielectric liner is formed by depositing a dielectric material on vertical portions of the diffusion barrier liner. A metallic conductive via structure is formed by subsequently filling the TSV trench. Horizontal portions of the diffusion barrier liner are removed. The diffusion barrier liner protects the semiconductor material of the substrate during the backside planarization by blocking residual metallic material originating from the metallic conductive via structure from entering into the semiconductor material of the substrate, thereby protecting the semiconductor devices within the substrate from metallic contamination.

Abstract: A method for maintaining non-porous nickel layer at a nickel/passivation interface of a semiconductor device in a nickel/gold electroless plating process. The method can include sequentially electroless plating of each of the nickel layer and gold layer on the device layer to pre-determined thicknesses to prevent corrosion of the nickel layer from reaching the device layer during the electroless gold plating process.

Abstract: A barrier layer can be attached in a semiconductor package to one or more sensitive devices. The barrier layer can be used to obstruct tampering by a malicious agent attempting to access sensitive information on the sensitive device. The barrier layer can cause the sensitive device to become inoperable if physically tampered. Additional other aspects of the protective packaging provide protection against x-ray and thermal probing as well as chemical and electrical tampering attempts.

Abstract: The mechanisms for forming bump structures reduce variation of standoffs between chips and package substrates. By planarizing the solder layer on bump structures on chips and/or substrates after plating, the heights of bump structures are controlled to minimize variation due to within die and within wafer locations, pattern density, die size, and process variation. As a result, the standoffs between chips and substrates are controlled to be more uniform. Consequently, underfill quality is improved.

Abstract: An electrical conductor is connected to a first microcircuit element having a first connector site axis and a second microcircuit having a second connector site axis. The first microcircuit and the second microcircuit are separated by and operatively associated with a first electrical insulator layer. The conductor and the first microcircuit element are separated by and operatively associated with a second electrical insulator layer. At least one of the first electrical insulator layer and the second electrical insulator layer comprise a polymeric material. The microcircuit includes a UBM and solder connection to a FBEOL via opening. Sufficiently separating the first connector site axis and the second connector site axis so they are not concentric, decouples the UBM and solder connection to the FBEOL via opening. This eliminates or minimizes electromigration and the white bump problems. A process comprises manufacturing the microcircuit.

Abstract: A bumping process comprises steps of forming a metal layer with copper on a substrate, and the metal layer with copper comprises a plurality of first zones and second zones; forming a photoresist layer on the metal layer with copper; patterning the photoresist layer to form a plurality of openings; forming a plurality of copper bumps within the openings, each of the copper bumps covers the first zones and comprises a first top surface; forming a connection layer on the first top surface; removing the photoresist layer; removing the second zones and enabling each of the first zones to form an under bump metallurgy layer, wherein the under bump metallurgy layer, the copper bump, and the connection layer possess their corresponded peripheral walls, and covering sections of a first protective layer formed on the connection layer may cover those peripheral walls to prevent ionization phenomenon.

Abstract: A conductive structure for a semiconductor chip and a method for forming the conductive structure are provided. The semiconductor chip comprises a semiconductor substrate, a pad, a passivation layer and a patterned insulating layer. The patterned insulating layer is disposed on the passivation layer and partially and directly covers the first opening of the pad to expose a second opening. The conductive structure comprises an under bump metal (UBM) layer and a conductive bump. The UBM layer is disposed in the second opening defined by the patterned insulating layer and is electrically connected to the pad. The conductive bump is disposed on the UBM layer and is electrically connected to the UBM layer. The upper surface of the conductive bump is greater than the upper surface of the patterned insulating layer, while the portion of the conductive bump disposed in the second opening is covered by the UBM layer.

Abstract: The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.

Abstract: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a double exposure of a layer of photoresist or the use of multiple layers of photoresist. A metallization structure is formed on a layer of electrically conductive material that is disposed on a substrate and a layer of photoresist is formed on the metallization structure. The layer of photoresist is exposed to light and developed to remove a portion of the photoresist layer, thereby forming an opening. Then, a larger portion of the photoresist layer is exposed to light and an electrically conductive interconnect is formed in the opening. The larger portion of the photoresist layer that was exposed to light is developed to expose edges of the electrically conductive interconnect and portions of the metallization structure. A protection layer is formed on the top and edges of the electrically conductive interconnect and on the exposed portions of the metallization structure.

Abstract: A method creates a structure that comprises a carrier connected to an integrated circuit chip by pillars and openings. Thus, in this structure, at least one conductive pillar extends a distance or height from the surface of the integrated circuit chip and a barrier surrounds the lower portion of the conductive pillar such that the barrier covers at least some portion of the height of the pillar that is closest to the chip surface. There is at least one opening in the carrier that is large enough to accommodate the conductive pillar and the barrier, and the conductive pillar and the barrier are positioned in opening. A solder is used in the bottom of the opening to connect the conductive pillar to the bottom of the opening. The barrier prevents the solder from contacting the portion of the conductive pillar protected by the barrier.

Abstract: A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.

Abstract: A packaging substrate includes a base body having at least a conductive pad on a surface thereof, a dielectric layer formed on the surface of the base body and having at least a first opening for exposing the conductive pad and at least a second opening formed at a periphery of the first opening, and a metal layer formed on the conductive pad and the dielectric layer and extending to a sidewall of the second opening, thereby effectively eliminating side-etching of the metal layer under a solder bump.

Abstract: A semiconductor device has a semiconductor die with a first conductive layer formed over the semiconductor die. A first insulating layer is formed over the semiconductor die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is formed over the first and second conductive layers within openings of a second insulating layer. The second insulating layer is removed. The interconnect structure can be a conductive pillar or conductive pad. A bump material can be formed over the conductive pillar. A protective coating is formed over the conductive pillar or pad to a thickness less than one micrometer to reduce oxidation. The protective coating is formed by immersing the conductive pillar or pad into the bath containing tin or indium.

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein components of the microelectronic packages may have magnetic attachment structures comprising a magnetic component and a metal component. The magnetic attachment structure may be exposed to a magnetic field, which, through the vibration of the magnetic component, can heat the magnetic attachment structure, and which when placed in contact with a solder material can reflow the solder material and attach microelectronic components of the microelectronic package.