Abstract: A photovoltaic module may include a substrate; a semiconductor layer adjacent to the substrate; a lead foil adjacent to the semiconductor layer; a cover glass adjacent to the lead foil, where the cover glass includes a top surface, a bottom surface, and an opening, where the opening penetrates the top and bottom surfaces of the cover glass, and the opening includes an opening lateral dimension; and a barrier layer between the cover glass and the semiconductor layer, where the barrier layer includes a barrier lateral dimension, where the barrier lateral dimension is greater than the opening lateral dimension.

Abstract: Photovoltaic modules with adhesion promoters and methods for fabricating photovoltaic modules with adhesion promoters are described. A photovoltaic module includes a solar cell including a first surface and a second surface, the second surface including a plurality of interspaced back-side contacts. A first glass layer is coupled to the first surface by a first encapsulating layer. A second glass layer is coupled to the second surface by a second encapsulating layer. At least a portion of the second encapsulating layer is bonded directly to the plurality of interspaced back-side contacts by an adhesion promoter.

Abstract: A solar cell module includes a base body, a plurality of solar cell elements arranged at intervals over the base body, a resin layer disposed on the solar cell elements and comprising a plurality of recesses on its surface facing opposite to the solar cell elements, and a protective sheet disposed on the resin layer. The protective sheet comprises a plurality of protrusions which correspond to the recesses of the resin layer and which are in contact with the recesses. The height of first protrusion at a location corresponding to the interval between the solar cell elements among the plurality of protrusions is higher than the height of second protrusion at a location corresponding to the solar cell element among the plurality of protrusions. The interval between adjacent ones of the second protrusions in a portion corresponding to an end portion of the base body in longer than the interval between adjacent ones of the second protrusions in a portion corresponding to a central portion of the base body.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes an acrylate-based polymer; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes polyethylene; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes cellulose; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: A laminate leadless carrier package comprising an optoelectronic chip, a substrate supporting the chip, the substrate comprising a plurality of conductive and dielectric layers; a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top surface of the substrate; an encapsulation covering the optoelectronic chip, the wire bond, and at least a portion of the top surface of the substrate, wherein the encapsulation is a molding compound; and wherein the package is arranged to be mounted as a side-looker. A process for manufacturing laminate leadless carrier packages, comprising preparing a substrate; applying epoxy adhesive to a die attach pad; mounting an optoelectronic chip on the die attach pad; wire-bonding the optoelectronic chip; molding a molding compound to form an encapsulation covering the optoelectronic chip, a wire bond, and the top surface of the substrate; and dicing the substrate into individual packages.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes a polyvinyl acetate or alcohol; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: Methods for processing photoimagers include forming one or more protective layers over the image sensing elements of a photoimager. Protective layers may facilitate thinning of the substrates of photoimagers, as well as prevent contamination of the image sensing elements and associated optical features during back side processing of the photoimagers. Blind vias, which extend from the back side of a photoimager to bond pads carried by an active surface of the photoimager, may be formed through the back side. The vias may be filled with conductive material and, optionally, redistribution circuitry may be fabricated over the back side of the photoimager. Photoimagers including features at result from such processes are also disclosed.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on the first surface of the semiconductor substrate; a light-transmissive protective member disposed above the light-receiving part of the semiconductor substrate with a predetermined gap and adhered via the adhesive layer; and plural external connection terminals arranged in a predetermined array on the second surface of the semiconductor substrate are included. Each center point of the external connection terminals forming two facing edges is positioned inside of an area of the adhesive layer projected on the second surface among the outermost external connection terminals.

Abstract: Disclosed in one aspect is a voltaic cell assembly comprising one or more voltaic cells, a photovoltaic cell in one embodiment; an elastomeric film and a transparent film, the voltaic cell sandwiched there between. The elastomeric film can be formed from a natural rubber or an isobutylene-based elastomer. More particularly, the elastomeric film may comprise a DVA of a polyamide and a functionalized poly(isobutylene-co-p-methylstyrene). The assembly described is useful for a number of end use articles including roofing shingles, automotive components, building components, and, in general, solar arrays.

Abstract: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

Abstract: There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

Abstract: The invention teaches novel structure and methods for producing electrical current collectors and electrical interconnection structure. Such articles find particular use in facile production of modular arrays of photovoltaic cells. The current collector and interconnecting structures may be initially produced separately from the photovoltaic cells thereby allowing the use of unique materials and manufacture. Subsequent combination of the structures with photovoltaic cells allows facile and efficient completion of modular arrays. Methods for combining the collector and interconnection structures with cells and final interconnecting into modular arrays are taught.

Abstract: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.

Abstract: An assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, the faces being located facing each other, at least one of the substrates having a surface topography. The method forms an intermediate layer including at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of the faces of substrates to each other from a topographic point of view, resistivity and/or thickness of the intermediate layer being chosen to enable the local electrical bonds, brings the two faces into contact, the substrates positioned to create electrical bonds between areas on the first substrate and corresponding areas on the second substrate, and bonds the faces by molecular bonding.

Abstract: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits having ports on the second edge. The second edges are connected to the substrate. The first major surface of the second integrated circuit is parallel with the second major surface of the first integrated circuit. The heat sink has a backplane adjacent to the third edge, a first portion along the first major surface of the first integrated circuit, a second portion along the second major surface of the second integrated circuit extending from the backplane, and an insert between the first major surface of the second integrated circuit and the second major surface of the first integrated circuit.

Abstract: A digital image sensor includes a planar substrate with one or more bonding pads on one side and a silicon chip with one or more bonding pads. The silicon chip is attached on the planar substrate through the one or more bonding pads. The attachment of the silicon chip to the planar substrate is performed in a manner such that the silicon chip, when attached, has a curved shape.

Abstract: Provided is a method of manufacturing a camera module, the camera module including a housing that includes one or more lenses which are sequentially fixed and coupled and of which the focus does not need to be adjusted; a holder assembly that is coupled to a lower end portion of the housing; and a main substrate that is coupled to a lower end portion of the holder assembly.

Abstract: An improved lead foil operation procedure for photovoltaic module manufacture is disclosed. The procedure includes lift, cut, and fold lead foil.

Abstract: An optical device having following components is disclosed. A semiconductor substrate has an element region formed on its upper side. A light transmitting insulator film covers an element region and has at least one recessed portion located in a region outside the element region. At least one protruding portion is provided in a region on the light transmitting insulator film outside the element region and inside the recessed portion. A light transmitting member covers the element region from above and is provided on the protruding portion. A light transmitting adhesive is filled in between the light transmitting insulator film and the light transmitting member.

Abstract: Embodiments of the invention provide a method of forming a composite solar cell structure that includes preparing a device substrate, wherein the device substrate includes a glass substrate, a transparent conductive layer deposited over the glass substrate, one or more silicon layers deposited over the transparent conductive layer, a back contact layer deposited over the one or more silicon layers, and one or more internal electrical connections disposed on the back contact layer. The method also includes forming a mating pattern on a bonding material to match a topography of an exposed surface of the device substrate, the exposed surface comprising the back contact layer and the one or more internal electrical connections. The method also includes positioning the bonding material over the exposed surface, disposing a back glass substrate over the bonding material to form a composite structure, and compressing the composite structure.

Abstract: The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.

Abstract: A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.

Abstract: A semiconductor device and a fabrication method thereof are provided. A semiconductor device which is packaged as it includes a semiconductor in which an electronic circuit is disposed, the semiconductor device including: a substrate; a semiconductor chip which has a semiconductor main body having the electronic circuit formed thereon, a pad electrode formed on the semiconductor main body and a projected electrode that is connected to the pad electrode and projected from a surface of the semiconductor main body, wherein the semiconductor chip is mounted on the substrate from the back side of the surface to form the projected electrode thereon; and an insulating layer which is formed as the semiconductor chip buried therein and is polished from a top surface of the insulating layer to a height at which a top of the projected electrode is exposed.

Abstract: An image sensor including a first substrate having a first surface intended to be illuminated and a second surface on the side of which is formed a plurality of photodetection areas, said second surface being covered with a stack of interconnect levels including metal layers topped with insulating material, and of a second substrate placed on the insulating material of the last interconnect level, in which are formed vias in contact with connection elements of the interconnect levels, at least one of the interconnect levels including conductive shielding areas aligned with the photodetection areas.

Abstract: A method for manufacturing a photovoltaic module may include coating a portion of a substrate with a coating material; depositing a barrier material layer on a least a portion of an edge of the substrate; and curing the barrier material layer, where the barrier material layer is effective as a barrier to the coating material.

Abstract: In an image sensor chip package method, a transparent substrate having an upper surface, a lower surface, and through holes is provided. The through holes pass through the transparent substrate. Conductive posts are formed in the through holes. A sealing ring is formed on the lower surface of the transparent substrate. A chip having an active surface, an image sensitive area, and die pads is provided. The image sensitive area and the die pads are located on the active surface. Conductive bumps are formed and respectively disposed on the die pads for respectively connecting the conductive posts. At the time the active surface of the chip is turned to face toward the lower surface of the transparent substrate. The chip is assembled to the transparent substrate and electrically connected with the conductive posts via the die pads. The sealing ring surrounds the image sensitive area and the die pads.

Abstract: The present invention features a solar-to-electric energy conversion device based on a light absorbing electrode coupled to a one-dimensional nanoparticle based photonic crystal. The function of the latter is to localize the incident light within the electrode thus enhancing the optical absorption and the power conversion efficiency of the so called dye-sensitized and organic (polymer based or hybrids) cell. The photonic crystal comprises alternating layers possessing different index of refraction and can be easily integrated into the cell.

Abstract: Provided are a camera module and a method of fabricating the same. The method includes preparing a lens structure including upper connection portions. Lower connection portions are formed in a predetermined region of a substrate. The lower connection portions define a chip region and fit in the upper connection portions, respectively. An image sensor chip is located on the bottom surface of the chip region. The lens structure is adhered to the substrate using the upper and lower connection portions.

Abstract: Device for the detection of electromagnetic waves with a first plate that contains a membrane and a detector structure fixed at least partially to the membrane, a second plate attached to the first plate, at least one contact point for surface mount technology on the first and/or second plate, whereby in a connection line between the detector structure and the contact point is at least partially led through the first and/or the second plate and that this connection line is at least partially prepared by film deposition and/or plating.

Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: A manufacturing method for molding an image sensor package structure and the image sensor package structure thereof are disclosed. The manufacturing method includes following steps of providing a half-finished image sensor for packaging, arranging a dam on the peripheral of a transparent lid of the half-finished image sensor, positioning the half-finished image sensor within a mold, and injecting a mold compound into the mold cavity of the mold. The dam is arranged on the top surface of the transparent lid and the inner surface of the mold can exactly contact with the top surface of dam so that the mold compound injected into the mold cavity is prevented from overflowing to the transparent lid by the dam. Furthermore, the arrangement of the dam and the mold compound can increase packaged areas and extend blockage to invasive moisture so as to enhance the reliability of the image sensor package structure.

Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

Abstract: A method for fabricating an encapsulant cavity integrated circuit package system includes: forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity.

Abstract: A semiconductor chip package structure for achieving flip-chip electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative layer, first conductive layers, a second insulative layer, and second conductive layers. The package unit has a receiving groove. The semiconductor chip is received in the receiving groove and has a plurality of conductive pads disposed on its top surface. The first insulative layer is formed between the conductive pads to insulate the conductive pads. The first conductive layers are formed on the first insulative layer and the package unit, and one side of each first conductive layer is electrically connected to the corresponding conductive pad. The second insulative layer is formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive layers are respectively formed on the other opposite sides of the first conductive layers.

Abstract: A semiconductor chip package structure for achieving electrical connection without using wire-bonding process includes an insulative substrate unit, a package unit, a semiconductor chip, a first conductive unit, an insulative unit and a second conductive unit. The package unit is disposed on the insulative substrate unit to form a receiving groove. The semiconductor chip is received in the receiving groove. The semiconductor chip has a plurality of conductive pads. The first conductive unit has a plurality of first conductive layers formed on the package body, and one side of each first conductive layer is electrically connected to each conductive pad. The insulative unit has an insulative layer formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive unit has a plurality of second conductive layers respectively formed on another sides of the first conductive layers.

Abstract: The present disclosure relates to a device for concentrating light onto a photovoltaic target. In one embodiment, the device may include a transparent concentrating lens having an outside surface and a top and bottom portion wherein the bottom portion may be configured to receive concentrated light. A photovoltaic strip including a conducting strip are then provided along with film adhered to at least a portion of the outside surface of the concentrating lens wherein the film engages the lens and positions the photovoltaic strip at the lens bottom portion. A dielectric fluid may then be located between the lens and the film.

Abstract: Methods for sealing a photonic device are disclosed. The photonic device may, for example, comprise a display device, a lighting device or a photovoltaic device. The device is sealed with a glass frit that is heated with a laser from both sides of the device (through both glass substrate plates), either sequentially or simultaneously. The methods can facilitate wider seal widths, and wider overall frit wall widths for increased device strength.

Abstract: The present invention is directed to a solar cell system comprising a solar cell on the light-receiving side of which a transparent encapsulant foil is present which comprises a reinforcing layer and two barrier layers, wherein the first, barrier layer is positioned above the reinforcing layer and the second barrier is positioned below the reinforcing layer, determined from the light-receiving side of the solar cell system, wherein the reinforcing layer comprises a fibre-reinforced layer which comprises fibres with an average length of at least 2 cm. The encapsulant foil itself, a process for manufacture thereof, and a process for manufacturing the solar cell system are also claimed.

Abstract: A MEMS device may be package with a desiccant to provide a moisture-free environment. In order to avoid undesirable effects on the MEMS device, the desiccant may be selected or treated so as to be compatible with a particular MEMS device. This treatment may include baking of the desiccant to as to cause outgassing of moisture or other undesirable material. The structure of the MEMS device may also be altered to improve compatibility with particular desiccants.

Abstract: A photovoltaic device including an active layer of an amorphous material in which the active layer is in the shape of an array of defined and repeating geometrical structures, wherein the geometrical structures include a base and a single apex that are connected by at least three n-polygonal surfaces where n is equal to 4 or higher.

Abstract: This application relates to a semiconductor device comprising multiple separate leads molded in a molded structure, and a chip attached to the molded structure over at least two of the multiple separate leads.

Abstract: According to the present invention, protrusions 4 are formed on electrodes 3 of semiconductor elements 6, and an optical member 7 is secured on the semiconductor element 6 with an adhesive 8 so as to be pressed onto the protrusions 4.

Abstract: An external component, typically a surface mount passive, is attached to a semiconductor die. In some embodiments the passive is placed directly over exposed pads on the semiconductor die and attached using conductive tape or conductive epoxy. In some embodiments the passive is attached to the semiconductor die using non-conductive adhesive and wire bonded to bond pads on the semiconductor die and/or to pads on a substrate to which the semiconductor die is attached.

Abstract: The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.

Abstract: An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

Abstract: A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.

Abstract: In a solid-state imaging device 1 in which a hollow section 9 is formed between a solid-state imaging element 2 and a covering section 4 and an air path 7 extending from the hollow section 9 to the outside is formed in an adhesive section 5, a shielding section 11 for shielding the air path 7 is formed on the air path 7 so as to be positioned on a portion exposed from the covering section 4. This makes it possible to reduce noises occurring in a signal processing section of a semiconductor element while preventing condensation in the covering section for covering the semiconductor element.